WO2004030054A1

WO2004030054A1 - Substrate processing apparatus

Info

Publication number: WO2004030054A1
Application number: PCT/JP2003/012082
Authority: WO
Inventors: Takahiro Horiguchi; Ryo Kuwajima
Original assignee: Tokyo Electron Limited
Priority date: 2002-09-24
Filing date: 2003-09-22
Publication date: 2004-04-08
Also published as: TW200421434A; AU2003266562A1; JP2004119519A; TWI230401B

Abstract

A substrate processing apparatus stably and efficiently conducts a film-forming process on a substrate (W) to be processed. By supporting the substrate (W) to be processed at a position facing a heater portion and rotating a holding member for holding the substrate (W), the temperature distribution of the substrate (W) is kept uniform and a warp of the substrate (W) is suppressed. Contamination by a metal can be prevented by making an arm portion of the holding member of a transparent quartz, making a shaft of the holding member of an opaque quartz, or rotatably supporting the shaft of the holding member by a ceramic bearing. The rotational position of the arm portion can be prevented from interfering with a robot hand and a lifter mechanism for conveying the substrate (W) by sensing the rotational position of the shaft of the holding member.

Description

Technical field

The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus for performing processing such as film formation on a substrate. Background art

In today's ultra-high-speed semiconductor devices, gate lengths of less than 0.1 l ^ m are becoming possible with the progress of miniaturization processes. In general, the operating speed of a semiconductor device improves with the miniaturization. However, in such a very miniaturized semiconductor device, the thickness of the gate insulating film is reduced according to the scaling law as the gate length is reduced by the miniaturization. It is necessary to decrease according to.

However, when the gate length becomes 0.1 μιη or less, the thickness of the gate insulating film must be set to l to 2 nm or less using a conventional thermal oxide film. Insulating films do not avoid the problem of increased tunnel currents and consequently increased gate leakage currents.

Under such circumstances, the relative dielectric constant has conventionally been much higher than that of the mature oxide film, so that even when the actual film thickness is large, the film thickness when converted to the Si 02 film is small. 2O5 and a _{L2_rei_3, Z r O2, Hf 0 2} , further been proposed to apply the high-dielectric ί «ί fee gate insulating film, such as Z r S i O4 or H f S i O4 ing. By using such a high dielectric material, it is possible to use a gate insulating film having a physical thickness of about 10 nm even in an ultra-high-speed semiconductor device having a gate length of 0.1 μm or less, Gate leak current due to the tunnel effect can be suppressed. For example, it is conventionally known that a Ta ₂ Os film can be formed by a CVD method using Ta (OC ₂ H 5) 5 and O ₂ as a vapor source material. Typically, CVD processes are performed in a reduced pressure environment at temperatures of about 480 ° C or higher. Thus Ta ₂ Rei_5 thus formed film is heat-treated in the further oxygen atmosphere, the As a result, oxygen vacancies in the film are eliminated, and the film itself is crystallized. In this way, the sintered crystallized been T a ₂ 0 ₅ film shows a large specific dielectric constant.

From the viewpoint of improving the carrier mobility in the channel region, an extremely thin base oxide having a thickness of 1 nm or less, preferably 0.8 nm or less is provided between the high-dielectric gate oxide film and the silicon substrate. It is preferable to interpose a membrane. The base oxide must be very thin; thicker ones offset the effect of using a high-k dielectric as the gate dielectric. On the other hand, such a very thin base oxide film needs to uniformly cover the surface of the silicon substrate, and is required not to form defects such as interface states. Conventionally, a thin gate oxide film is generally formed by rapid thermal oxidation (RTO) treatment of a silicon substrate (for example, see Patent Document 1). If it is attempted to form a film, it is necessary to lower the processing temperature during film formation. Is the thermal oxide film formed at such a low temperature an interface? (It is likely to contain vertical defects and is unsuitable as a base oxide film of a high dielectric gate oxide film. FIG. 1 shows a schematic configuration of a high-speed semiconductor device 10 having a high dielectric gate insulating film. .

Referring to FIG. 1, a semiconductor device 10 is formed on a silicon substrate 11, and Ta ₂ 0 ₅ , A 1 ₂ O ₃ , A high dielectric gate insulating film 13 such as ZrO2, HfO2, ZrSi4, HfSiO4, etc. is formed, and a gate electrode is formed on the high dielectric gate insulating film 13. 14 are formed.

In the semiconductor device 10 shown in FIG. 1, the surface of the base oxide film 12 is coated with nitrogen within a range where the flatness of the interface between the silicon substrate 11 and the base oxide film 12 is maintained.

(N) is doped to form an oxynitride film 12A. By forming the oxynitride film 12 A having a higher relative dielectric constant than the silicon oxide film in the base oxide film 12, it is possible to further reduce the equivalent thermal oxide film thickness of the base oxide film 12. become. As described above, in the powerful high-speed semiconductor device 10, the thickness of the base oxide film 12 is preferably as thin as possible.

The base oxide film 12 is formed uniformly and stably with a thickness of 1 nm or less, for example, 0.8 nm or less, and a thickness of about 0.4 nm corresponding to 2 to 3 atomic layers. Is It was very difficult than before.

Further, in order to realize the function of the high-dielectric gate insulating film 13 formed on the base oxide film 12, the deposited high-dielectric film 13 is crystallized by heat treatment, and the oxygen deficiency is compensated. However, if such a heat treatment is performed on the high dielectric film 13, the thickness of the base oxide film 12 will increase, and the high dielectric gate insulating film 13 must be used. The effective decrease in Hi * of the gate insulating film due to the above was substantially offset.

The increase in Hff of the base oxide film 12 due to such a heat treatment is caused by the interdiffusion of oxygen atoms and silicon atoms at the interface between the silicon substrate 11 and the base oxide film 12 and the resulting silicate transition. This suggests the possibility of growth of the base oxide film 12 due to formation of a layer or penetration of oxygen into the silicon substrate. The problem of such an increase in the film thickness due to the heat treatment of the base oxide film 12 is particularly serious when the film thickness of the base oxide film 12 is reduced to a thickness of several atomic layers or less, which is desirable as the base oxide film. This is a serious problem. Patent Document 1 Japanese Patent Application Laid-Open No. 5-476787 Disclosure of the Invention

An object of the present invention is to provide a new and useful substrate processing apparatus that solves the above-mentioned problems.

A more detailed object of the present invention is to stably form a very thin, typically 2 to 3 atomic layer thick oxide film on the surface of a silicon substrate, and further nitride the film to form an oxynitride film. An object of the present invention is to provide a substrate processing apparatus capable of forming a substrate.

Further, a more specific object of the present invention is to provide a method for stably forming an extremely thin oxide film having a thickness of typically 2 to 3 atomic layers on the surface of a silicon substrate and further stably nitriding the oxide film. An object of the present invention is to provide a cluster type substrate processing system including a processing apparatus.

Still another object of the present invention is to solve the above-mentioned problems, improve the uniformity of the oxide film, improve the throughput, and prevent contamination. It is an object of the present invention to provide a processed substrate processing apparatus.

The present invention has the following features to achieve the above object.

According to the present invention, the substrate to be processed is supported at a position facing the heater unit, and the holding member for holding the substrate to be processed is rotated, so that the temperature distribution of the substrate to be processed is kept uniform, Warpage can be suppressed, and film formation processing of a substrate to be processed can be performed stably and efficiently.

According to the present invention, the arm of the holding member is formed of transparent quartz, or the shaft is formed of opaque quartz, or the shaft of the holding member is rotatably supported by a ceramic bearing. Contamination due to metal can be prevented.

Further, according to the present invention, the rotation position of the plurality of arms supporting the substrate to be processed by detecting the rotation position of the shaft of the holding member is a transporting means for transporting the substrate to be processed, and the lifter for moving the substrate to be processed up and down Interference with the mechanism can be prevented. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a diagram showing a configuration of a semiconductor device having a high dielectric gate insulating film. FIG. 2 is a front view showing the configuration of one embodiment of the substrate processing apparatus according to the present invention. FIG. 3 is a side view showing the configuration of one embodiment of the substrate processing apparatus according to the present invention. FIG. 4 is a cross-sectional view taken along line AA in FIG.

FIG. 5 is a front view showing a configuration of a device disposed below the processing container 22. FIG. 6 is a plan view showing a configuration of a device arranged below the processing container 22. As shown in FIG. FIG. 7 is a side view showing a configuration of a device arranged below the processing container 22. As shown in FIG. FIG. 8A is a plan view showing the configuration of the exhaust path 32. FIG.

FIG. 8B is a front view showing the configuration of the exhaust path 32.

FIG. 8C is a longitudinal sectional view taken along line BB.

FIG. 9 is a side longitudinal sectional view showing the processing container 22 and its surrounding β in an enlarged manner. FIG. 10 is a plan view of the inside of the processing container 22 with the cover member 82 removed, as viewed from above.

FIG. 11 is a plan view of the processing container 22. FIG. 12 is a front view of the processing container 22.

FIG. 13 is a bottom view of the processing container 22.

FIG. 14 is a longitudinal sectional view taken along line C-C in FIG.

FIG. 15 is a right side view of the processing container 22.

FIG. 16 is a left side view of the processing container 22.

FIG. 17 is an enlarged longitudinal sectional view showing the mounting structure of the ultraviolet light sources 86 and 87. As shown in FIG. FIG. 18 is a longitudinal sectional view showing the configuration of the gas injection nozzle section 93 in an enlarged manner. FIG. 19 is a cross-sectional view showing the configuration of the gas injection nozzle section 93 in an enlarged manner. FIG. 20 is an enlarged front view showing the configuration of the gas injection nozzle section 93.

FIG. 21 is an enlarged longitudinal sectional view showing the configuration of the heater section 24.

FIG. 22 is a bottom view showing the heater section 24 in an enlarged manner.

FIG. 23 is an enlarged longitudinal sectional view showing a mounting structure of the second inlet 170 and the second outlet 174.

FIG. 24 is a longitudinal sectional view showing the mounting structure of the flange 140 in an enlarged manner.

FIG. 25 is an enlarged longitudinal sectional view showing the mounting structure at the upper end of the clamp mechanism 190.

FIG. 26 is a diagram illustrating a configuration of a control system of the SiC heater 114 and the SoC heater 114.

FIG. 27A is a plan view showing the configuration of the quartz peruger 112. FIG.

FIG. 27B is a longitudinal sectional view showing the configuration of the quartz peruger 112.

FIG. 28A is a perspective view of the configuration of the quartz peruger 112 seen from above.

FIG. 28B is a perspective view of the configuration of the quartz belger 112 seen from below.

FIG. 29 is a system diagram showing a configuration of an exhaust system of the pressure reducing system.

FIG. 3OA is a plan view showing the configuration of the holding member 120. FIG.

FIG. 30B is a plan view showing the configuration of the holding member 120.

FIG. 31 is a vertical cross-sectional view showing the configuration of a rotation drive unit 28 disposed below the heater unit 24.

FIG. 32 is a longitudinal cross-sectional view showing the rotation drive unit 28 in an enlarged manner.

FIG. 33A is a cross-sectional view showing the configuration of the holder cooling mechanism 234. FIG. 33B is a side view showing the configuration of the holder cooling mechanism 234.

FIG. 34 is a cross-sectional view showing the configuration of the rotational position detecting mechanism 232.

FIG. 35A is a diagram showing a non-detection state of the rotation position detection mechanism 2 32.

FIG. 35B is a diagram showing a detection state of the rotation position detection mechanism 232.

FIG. 36A is a waveform diagram showing an output signal S of the light receiving element 2688 of the rotation position detecting mechanism 2 32.

FIG. 36B is a waveform diagram of the pulse signal P output from the rotational position determination circuit 270.

FIG. 37 is a flowchart for explaining a rotational position control process performed by the control circuit.

Fig. 38 is a cross-sectional view of the mounting location of the windows 75, 76 as viewed from above.

FIG. 39 is a cross-sectional view showing the window 75 in an enlarged manner.

FIG. 40 is a cross-sectional view showing the window 76 in an enlarged manner.

FIG. 41A is a plan view showing the configuration of the lower case 102. FIG.

FIG. 41B is a side view showing the configuration of the lower case 102. FIG.

FIG. 42A is a plan view showing a configuration of the side case 104. FIG.

FIG. 42B is a front view showing the configuration of the side case 104. FIG.

FIG. 42C is a rear view showing the configuration of the side case 104. As shown in FIG.

FIG. 42D is a left side view showing the configuration of the side case 104. As shown in FIG.

FIG. 42E is a right side view showing the configuration of the side case 104. As shown in FIG.

FIG. 43A is a bottom view showing the configuration of the upper case 106. FIG.

FIG. 43B is a side view showing the configuration of the upper case 106.

FIG. 44A is a plan view showing the configuration of the cylindrical case 108. FIG.

FIG. 44B is a side longitudinal sectional view showing the configuration of the cylindrical case 108.

FIG. 44C is a side view showing the configuration of the cylindrical case 108.

FIG. 45 is a longitudinal sectional view showing the lifter mechanism 30 in an enlarged manner.

FIG. 46 is a longitudinal sectional view showing the seal structure of the lifter mechanism 30 in an enlarged manner.

FIG. 47A is a side view and a plan view showing a case where the substrate W to be processed is subjected to radical oxidation using the substrate processing apparatus 20 of FIG. FIG. 47B is a plan view showing the configuration of FIG. 47A.

FIG. 48 is a view showing a substrate oxidation treatment step performed by using the substrate processing apparatus 20.

FIG. 49 is a diagram showing a method of measuring a film thickness by XPS used in the present invention. FIG. 50 is another diagram showing a film thickness measuring method using XPS used in the present invention. FIG. 51 is a diagram schematically showing a phenomenon of halting of oxidized growth observed when an oxide film is formed by the substrate processing apparatus 20.

FIG. 52A is a view showing the oxide film forming step 1 on the silicon-based surface. FIG. 52B is a view showing the oxide film forming step 2 on the silicon substrate surface. FIG. 53 is a diagram showing the leakage current characteristics of the oxide film obtained in the first example of the present invention.

FIG. 54A is a diagram for explaining the cause of the leakage current characteristics of FIG.

FIG. 54B is a diagram for explaining the cause of the leak current characteristic of FIG.

FIG. 55A is a view showing an oxide film forming step 1 which occurs in the substrate processing apparatus 20.

FIG. 55B is a view showing an oxide film forming step 2 which occurs in the substrate processing apparatus 20.

Figure 55. FIG. 4 is a view showing an oxide film forming step 3 that occurs in the substrate processing apparatus 20.

FIG. 56 is a diagram showing a configuration of a remote plasma source used in the substrate processing apparatus 20.

FIG. 57 is a diagram comparing characteristics of the RF remote plasma and the microwave plasma.

Figure 58 is another diagram comparing the characteristics of RF remote plasma and microwave plasma.

FIG. 59A is a side view showing an oxide film nitriding process performed by using the substrate processing apparatus 20.

FIG. 59B is a plan view showing the nitridation of the oxide film performed using the substrate processing apparatus 20. FIG. 60A shows an oxidized film formed on a Si substrate to a thickness of 2.0 nm by a thermal oxidation process using a substrate processing apparatus 20. FIG. 4 is a diagram showing a nitrogen concentration distribution in the oxidation film when nitriding under the conditions shown. FIG. 6 OB is a diagram showing the relationship between the nitrogen concentration distribution and the oxygen concentration distribution in the same oxide film.

FIG. 61 is a diagram showing an outline of XPS used in the present invention.

FIG. 62 is a diagram showing the relationship between the nitriding time of an oxide film by remote plasma and the nitrogen concentration in the film.

FIG. 63 is a diagram showing the relationship between the nitriding time of the oxide film and the distribution of nitrogen in the film. FIG. 64 is a diagram showing a change in the film thickness of each oxynitride film formed by nitriding the oxide film for each wafer.

FIG. 65 is a diagram showing an increase in film thickness accompanying the nitridation treatment of the oxidation film according to the present embodiment. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 2 is a front view showing the configuration of one embodiment of the substrate processing apparatus according to the present invention. FIG. 3 is a side view showing the configuration of one embodiment of the substrate processing apparatus according to the present invention. FIG. 4 is a cross-sectional view taken along line AA in FIG.

As shown in FIGS. 2 to 4, the substrate processing apparatus 20 includes, as described later, an ultraviolet radical oxidation treatment of a silicon substrate and a high frequency remote control of an oxide film formed by the ultraviolet radical oxidation treatment. The radical nitriding treatment using plasma can be performed continuously.

The main components of the substrate processing apparatus 20 include a processing container 22 having a processing space defined therein, and a heater unit for heating a substrate (silicon substrate) inserted into the processing container 22 to a predetermined temperature. 24, an ultraviolet irradiation unit 26 mounted on the upper part of the processing vessel 22, a remote plasma unit 27 for supplying nitrogen radicals, a rotation driving unit 28 for rotating the substrate to be processed, and a processing space. A lifter mechanism 30 for raising and lowering the inserted substrate to be processed, an exhaust path 32 for depressurizing the inside of the processing vessel 22, and a gas (a process such as a nitrogen gas or an oxygen gas) inside the processing vessel 22. Gas supply section 3 4 for supplying gas) Mosquitoes.

Further, the substrate processing apparatus 20 includes a frame 36 for supporting each of the main components. The frame 36 is a three-dimensional combination of steel frames, and has a trapezoidal bottom frame 38 placed on the floor, and a vertical frame 40 standing upright from the rear of the bottom frame 38. 41, an intermediate frame 42 extending horizontally from an intermediate portion of the vertical frame 40, and an upper portion extending horizontally from the upper ends of the vertical frames 40, 41. The frame is composed of four and four.

The bottom frame 38 has a cooling water supply unit 46, exhaust pulp 48 a and 48 b composed of solenoid valves, a turbo molecular pump 50, a vacuum line 51, and a power unit for an ultraviolet irradiation unit 26. 52, a drive section 13 6 of the lifter mechanism 30 and a gas supply section 34 are mounted.

Inside the vertical frame 40, a cable duct 40a through which various cables pass is formed. Further, an exhaust duct 41 a is formed inside the vertical frame 41. In addition, an emergency stop switch 60 is attached to the bracket 58 fixed to the middle part of the vertical frame 40, and the temperature of cooling water is set to the bracket 62 fixed to the middle part of the vertical frame 41. Perform adjustment ^^ Adjuster 64 is installed.

The intermediate frame 42 supports the processing container 22, an ultraviolet irradiation section 26, a remote plasma section 27, a rotation drive section 28, a lifter mechanism 30, and a UV lamp controller 57. The upper frame 44 also has a gas box 66 connected to a plurality of gas pipelines 58 drawn from the gas supply unit 34, an ion gauge controller 68, an APC controller 70 for controlling pressure, A TMP controller 72 for controlling the turbo molecular pump 50 is mounted. FIG. 5 is a front view showing the structure of β disposed below the processing container 22. FIG. 6 is a plan view showing a configuration of a device disposed below the processing container 22. FIG. 7 is a side view showing the configuration of β disposed below the processing container 22. 8A is a plan view showing the configuration of the exhaust path 32, FIG. 8C is a front view showing the configuration of the exhaust path 32, and FIG. 8C is a longitudinal sectional view taken along the line Β-Β.

As shown in FIG. 5 to FIG. 7, the processing container 22 An exhaust path 32 for exhausting the internal gas is provided. The exhaust path 32 is attached so as to communicate with a rectangular exhaust port 74 having a width dimension substantially the same as the width of the processing space formed inside the processing vessel 22. .

As described above, since the exhaust port 74 is formed so as to extend to a length corresponding to the width of the inside of the processing container 22, the gas supplied from the front part 22 a side of the processing container 22 to the inside is formed. As will be described later, the gas passes through the inside of the processing container 22 and flows backward, and is efficiently exhausted to the exhaust passage 32 at a constant flow rate (laminar flow).

As shown in FIG. 8A to FIG. 8C, the exhaust path 32 has a rectangular opening 32 a communicating with the exhaust port 74, and the left and right side surfaces of the opening 32 a face downward. Theno ,. Tapered section 3 2b, bottom section 3 c with narrow passage area at the lower end of tapered section 3 2b, and L-shaped main exhaust pipe 3 2 d protruding forward from bottom section 3 2c And a discharge outlet 32 e opened at the lower end of the main exhaust pipe 32 d and a bypass outlet 32 g opened at a lower portion 32 f of the tapered portion 32 b. The outlet 32 e is connected to the inlet of the turbo molecular pump 50. In addition, the discharge port 32 g for the no-pass is communicated with the bypass pipe 51 a.

As shown in FIGS. 5 to 7, the gas discharged from the exhaust port 74 of the processing vessel 22 flows in from the rectangular opening 32 a by the suction force of the turbo molecular pump 50. Then, it passes through the tapered portion 32b, reaches the bottom portion 32c, and is guided to the turbo-molecular pump 50 via the main exhaust pipe 3'2d and the outlet 32e.

The discharge pipe 50 a of the molecular pump 50 is connected to the vacuum pipe 51 via the valve 48 a. Therefore, the gas filled in the processing vessel 22 is supplied to the valve 4. When the valve 8a is opened, the gas is exhausted to the vacuum line 51 via the turbo molecular pump 50. In addition, a bypass line 51a is connected to the bypass outlet 32g of the exhaust path 32. The bypass pipe 51a is connected to the vacuum pipe 51 by opening the valve 48b.

Here, a configuration of the processing container 22 and a peripheral device thereof that constitute a main part of the present invention will be described.

[Configuration of processing vessel 22]

FIG. 9 is a side longitudinal sectional view showing the processing container 22 and its peripheral devices in an enlarged manner. Figure 10 is a plan view of the inside of the processing container 22 with the cover member 82 removed, as viewed from above. As shown in FIGS. 9 and 10, the processing container 22 has a configuration in which the upper opening of the chamber 80 is closed by a lid member 82, and the inside becomes a process space (processing space) 84. I have.

In the processing container 22, a supply port 22 g through which gas is supplied is formed in a front part 22 a, and a transfer port 94 is formed in a rear part 22 b. The supply port 22 g is provided with a gas injection nozzle section 93 described later, and the transfer port 94 is connected to a gate valve 96 described later.

FIG. 11 is a plan view of the processing container 22. FIG. 12 is a front view of the processing container 22. FIG. 13 is a bottom view of the processing container 22. FIG. 14 is a longitudinal sectional view taken along the line C—C in FIG. FIG. 15 is a right side view of the processing container 22. FIG. 16 is a left side view of the processing container 22.

As shown in FIGS. 11 to 16, the bottom part 2 2 c of the processing container 22 has an opening 73 into which the heater part 24 is inserted, and the above-described rectangular-shaped exhaust port 74. Is set up. The aforementioned exhaust path 32 is connected to the exhaust port 74. The chamber 80 and the lid member 82 are, for example, formed by cutting an aluminum alloy into the above-described shape.

Also, on the right side 22 e of the processing vessel 22, there are first and second windows 75, 76 for measuring the process space 84, and a sensor for measuring the temperature of the process space 84. -Kit 7 is installed.

In the present embodiment, a first window 75 formed in an oval shape is disposed on the left side of the center of the right side surface 22 e, and a second window formed in a circular shape on the right side of the center of the right side surface 22 e. Since the substrate 6 is arranged, the state of the substrate to be processed held in the process space 84 can be directly observed from both directions, which is advantageous for observing the film formation state of the substrate W to be processed. .

The windows 75 and 76 are configured so that they can be removed from the processing container 22 when a temperature measuring instrument such as a thermocouple is inserted.

A sensor unit 85 for measuring the pressure in the process space 84 is attached to the left side surface 22 d of the processing container 22. In this sensor unit 85, 3 012082

12 Three pressure gauges 85a to 85c with different measurement ranges are provided, and it is possible to measure the pressure change in the process space 84 with high accuracy.

In addition, at the four corners of the inner wall of the processing vessel 22 forming the process space 84, curved portions 22h formed in an R shape are provided. This curved portion 22h prevents stress concentration and However, the gas jet nozzle 93 acts to stabilize the gas flow injected from the nozzle.

[Configuration of UV irradiation section 26]

As shown in FIGS. 8 to 11, the ultraviolet irradiation section 26 is attached to the upper surface of the lid member 82. Inside the housing 26a of the ultraviolet irradiation section 26, two cylindrical ultraviolet light sources (UV lamps) 86 and 87 are arranged at predetermined intervals ffi in a cylindrical shape.

The ultraviolet light sources 86 and 87 have a characteristic of emitting ultraviolet light having a wavelength of 172 nm, and have a rectangular opening 82 formed in the cover member 82 and extending in the lateral direction. A position where the front half (left half in FIG. 8) of the process space 84 is irradiated with ultraviolet rays so as to face the upper surface of the substrate W to be processed held in the process space 84 via a and 82b. It is provided in.

Also, the intensity distribution of the ultraviolet light irradiated onto the substrate W from the linearly extending ultraviolet light sources 86 and 87 is not uniform, and varies depending on the position of the substrate W in the radial direction. One decreases toward the outer periphery of the substrate W to be processed, and the other decreases toward the outer periphery. As described above, the ultraviolet light sources 86 and 87 independently form a monotonically changing ultraviolet intensity distribution on the substrate to be treated w, but the direction of change of the ultraviolet intensity distribution with respect to the substrate to be treated is reversed.

Therefore, by optimizing the driving power of the ultraviolet light sources 86 and 87 under the control of the UV lamp controller 57, it becomes possible to realize a very uniform ultraviolet intensity distribution on the substrate W to be processed.

The optimum value of the strong drive power can be obtained by changing the drive output to the ultraviolet light sources 86 and 87 and evaluating the film formation result.

Also, the distance between the substrate to be treated; KW and the center of the cylindrical core of the ultraviolet light sources 86, 87 is set to, for example, 50 to 30 Omm, preferably 100 to 100 mm. 2 0 0 12082

About 13 mm is good.

FIG. 17 is an enlarged longitudinal sectional view showing the mounting structure of the ultraviolet light sources 86 and 87. As shown in FIG. As shown in Fig. 17, the ultraviolet light sources 86 and 87 are

26a is held at a position facing the bottom opening 26b. The bottom opening 26 b is opened at a position facing the upper surface of the substrate W to be processed held in the process space 84, and is longer than the entire length of the ultraviolet light sources 86, 87! /, It is formed in a rectangular shape with a width dimension.

A transparent window 88 formed of transparent quartz is attached to a peripheral portion 26c of the bottom opening 26b. The transparent window 88 transmits ultraviolet light emitted from the ultraviolet light sources 86 and 87 to the process space 84, and has a strength capable of withstanding a pressure difference when the process space 84 is depressurized. .

In addition, a sealing surface 8 8 a is formed on the lower peripheral edge of the transparent window 8 8, where the sealing member (O-ring) 8 9 mounted in the groove of the lower opening 2 6 b peripheral edge 26 c contacts. Reply This sealing surface 88a is formed of a coating or black quartz for protecting the see-through member 89. As a result, the material of the seal member 89 does not change, preventing deterioration and ensuring sealing performance, and preventing the material of the seal member 89 from entering the process space 84.

In addition, a stainless steel cover 88 b is in contact with the peripheral edge of the upper surface of the transparent window 88, and by increasing the strength when the transparent window 88 is clamped by the fastening member 91, the pressing force at the time of fastening is increased. This prevents the transparent window 8 8 from being damaged by pressure.

In the present embodiment, the ultraviolet light sources 86 and 87 and the transparent window 88 are provided so as to extend in a direction perpendicular to the flow direction of the gas flow injected from the gas injection nozzle portion 93. However, the present invention is not limited to this. For example, the ultraviolet light sources 86 and 87 and the transparent window 88 may be provided in a direction extending in the gas flow direction.

[Configuration of gas injection nozzle section 93]

As shown in FIG. 9 and FIG. 10, the processing container 22 is provided with a gas jet for injecting nitrogen gas or oxygen gas into the process space 84 through a supply port 22 g opening to the front part 22 a. An injection nozzle portion 93 is provided. The gas injection nozzle section 93 has a plurality of injection ports 93 a arranged in a row in the width direction of the process space 84 as described later. A stable flow is generated inside the process space 84 so that the gas injected from the plurality of injection ports 93a passes through the surface of the substrate W to be processed in a laminar flow state.

The distance between the lower surface of the lid member 82 that closes the process space 84 and the substrate W to be processed is set, for example, to 5 to 100 mm, and preferably about 25 to 85 mm. No.

[Configuration of heater section 24]

As shown in FIG. 9 and FIG. 10, the heater section 24 includes a base 110 made of an aluminum alloy, a transparent quartz peruger 1 12 fixed on the base 110, and a quartz belt jar. Mounted on the top of the SiC heater 1 14 housed in the internal space 1 1 3 of 1 1 2, the heat reflecting member (reflector) 1 16 made of opaque quartz, and the quartz perg 1 1 2 And a SiC susceptor (heating member) 118 heated by the SiC heater 114.

Therefore, the SiC heater 114 and the heat reflection member 116 are isolated in the internal space 113 of the quartz perger 112, and the contamination in the process space 84 is stopped. In the cleaning step, only the SiC susceptor 118 exposed in the process space 84 needs to be cleaned, so that the trouble of cleaning the SiC heater 114 and the heat reflecting member 116 is eliminated. It can be omitted.

The target substrate OT is held by the holding member 120 so as to face above the SoC susceptor 118. On the other hand, the SiC heater 114 is placed on the upper surface of the heat reflecting member 116, and the heat generated by the SiC heater 114 is generated by the SiC susceptor 118, and the heat is generated. However, the heat reflected by the heat reflecting member 116 is also transmitted to the SiC susceptor 118. Note that the SiC heater 114 of the present embodiment is heated to a temperature of about 700 ° C. while being slightly separated from the SiC susceptor 118.

Since the SiC susceptor 118 has a good thermal conductivity, the heat from the SiC heater 114 is efficiently transmitted to the substrate to be processed, and the substrate to be processed W is formed between the peripheral portion and the central portion. By eliminating the difference, the substrate W to be processed is prevented from warping due to the temperature difference.

[Structure of rotary drive unit 28]

As shown in FIG. 9 and FIG. 10, the rotation drive unit 28 is 31. A holding member 120 for holding the substrate to be processed above the susceptor 118 and a lower surface of the base 110 A fixed casing 122, a motor 128 for rotating and driving a ceramic shaft 126 coupled to the shaft 120d of the holding member 120 in a partial space 124 defined by the casing 122, and a motor 128 And a magnet coupling 130 for transmitting the rotation of the magnet.

In the rotary drive unit 28, the shaft 120d of the holding member 120 is penetrated through the quartz peruger 112 to be connected to the ceramic shaft 126, and a magnetic cup is provided between the ceramic shaft 126 and the rotary shaft of the motor 128 Since the driving force is transmitted through the ring 130 in a non-contact manner, the configuration of the rotary drive system is compact, which also contributes to the miniaturization of the entire apparatus.

The holding member 120 has arms 120a to 120c extending radially (at intervals of 120 degrees in the circumferential direction) in the horizontal direction from the upper end of the shaft 120d. The substrate to be processed is held in a state of being placed on the arm portions 120 a to 120 c of the holding member 120. The substrate to be processed j¾W held in this manner is rotated at a constant rotation speed by the motor 128 together with the holding member 120, whereby the temperature distribution due to the heat generated by the SiC heater 114 is averaged. At the same time, the intensity distribution of the ultraviolet light emitted from the ultraviolet light sources 86 and 87 becomes uniform, and a uniform film is formed on the surface.

[Configuration of lifter mechanism 30]

As shown in FIGS. 9 and 10, the lifter mechanism 30 is provided below the chamber 80 and on the side of the quartz veneer roll 112, and is provided with a lift arm 132 inserted into the champ 80 and a lift mechanism 132. An elevating shaft 134 connected to the arm 132 and a driving unit 136 that elevates the elevating shaft 134 are configured. The elevating arm 132 is formed of, for example, ceramic or quartz, and surrounds a coupling portion 132 a to which the upper end of the elevating shaft 134 is coupled and an outer periphery of the SiC susceptor 118 as shown in FIG. And an annular portion 132b. The elevating arm 132 is provided with three contact pins 138a to 138c extending from the inner periphery of the annular portion 132b to the center at intervals of 120 degrees in the circumferential direction.

The contact pins 138a to 138c are lowered to a position where they fit into the grooves 118a to 18c formed so as to extend from the outer periphery of the SiC susceptor 118 toward the center. The lifting arm 132 moves upward to move above the SiC susceptor 118. Ma In addition, the contact pins 138 a to 138 c are arranged so as not to interfere with the arms 120 a to 120 c of the holding member 120 formed so as to extend from the center of the SiC susceptor 118 to the outer peripheral side. Have been.

The lifting arm 132 holds the substrate W by bringing the contact pins 138 a to 138 c into contact with the lower surface of the substrate W just before the robot hand of the transfer port 98 takes out the substrate W. Lift from the arm parts 120 a to 120 c of the member 120. Thereby, the robot hand of the transfer robot 98 can move below the substrate W to be processed, and can move and hold the substrate to be processed W by lowering the elevating arm 132. .

[Configuration of quartz liner 100]

As shown in FIGS. 9 and 10, a quartz liner 100 made of, for example, white opaque quartz is mounted inside the processing container 22 to block ultraviolet rays. Further, the quartz liner 100 has a configuration in which a lower case 102, a side case 104, an upper case 106, and a cylindrical case 108 that covers the outer periphery of the quartz peruger 112 are combined as described later.

The quartz liner 100 covers the inner walls of the processing container 22 and the lid member 82 forming the process space 34, thereby providing a heat insulating effect of preventing the thermal expansion of the processing container 22 and the lid member 82, and It has a function of preventing the inner walls of the container 22 and the cover member 82 from being oxidized by ultraviolet rays, and also preventing metal contamination.

[Configuration of Remote Plasma Unit 27]

As shown in FIGS. 9 and 10, the remote plasma unit 27 that supplies nitrogen radicals to the process space 84 is attached to the front part 22 a of the processing container 22, and is connected to the processing container via a supply pipe 90. It is connected to 22 supply ports 92.

In the remote plasma section 27, a nitrogen gas is supplied together with an inert gas such as Ar, and the nitrogen gas can be activated by plasma to form nitrogen radicals. The nitrogen radicals thus formed flow along the surface of the target ¾¾W to be processed, and nitride the substrate surface.

In addition to nitrogen gas, oxidation with _{_{0 2, NO, N 2 0}} , N0 2, NH 3 gas or the like, 2003/012082

17 An oxynitride radical process is also feasible.

[Configuration of gate valve 96]

As shown in FIG. 9 and FIG. 10, a transfer port 94 for transferring the substrate to be processed is provided at the rear of the processing container 22. The transfer port 94 is closed by the gate valve 96 and is opened by the opening operation of the gate valve 96 only when the substrate to be processed is transferred. '

A transfer port pot 98 is provided behind the gate valve 96. Then, in accordance with the opening operation of the gate pulp 96, the robot hand of the transfer robot 98 enters the process space 84 from the transfer port 94 to perform the work of exchanging the substrate W to be processed. [Details of each component above]

(1) Here, the configuration of the gas injection nozzle section 93 will be described in detail. FIG. 18 is an enlarged longitudinal sectional view showing the configuration of the gas injection nozzle section 93. FIG. 19 is a cross-sectional view showing the configuration of the gas injection nozzle section 93 in an enlarged manner. FIG. 20 is an enlarged front view showing the configuration of the gas injection nozzle section 93.

As shown in FIGS. 18 to 20, the gas injection nozzle portion 93 has a communication hole 92 in the center of the front surface, through which the supply pipe 90 of the remote plasma portion 27 communicates. Roh nozzle plate 9 ₃ bi~ 9 3 b 3 that above the holes 9 2 a plurality of injection holes 9 3 ai~ 9 3 a _n arranged in a line in the transverse direction are attached. Injection holes 9 3 ai~ 9 3 a _n, if example embodiment, a small diameter hole l mm, are provided in a 1 O mni intervals.

Further, in this embodiment, is provided with the injection holes 9 3 ai~ 9 3 a _n consisting of small holes is not limited thereto, for example, may be provided with a narrow slit as嘖射hole. Further, the nozzle plates 93 b 丄 to 93 b ₃ are fastened to the wall surface of the gas injection nozzle portion 93. Therefore, the injection hole 9 3 a丄~ 9 3 gas injected from a _n flows in front of the wall surface of the gas injection Roh nozzle part 9 3.

For example, the if the injection hole 9 3 ai~ 9 3 a _n are provided in the nozzle pipe pipe-like, injection hole 9 3 ai~ 9 3 a _n part nozzle tube of the injected gas from A flow that wraps around the back of the road is generated, and a gas pool is generated in the process space 84, which causes a problem that the gas flow around the substrate W to be processed becomes unstable.

However, in the present embodiment, the injection holes 93 a to _{93 an} are provided in the gas injection nozzle section 9. The structure formed on the wall of No. 3 does not cause such a phenomenon that such gas returns to the back of the nozzle, and it is possible to maintain a stable laminar gas flow around the substrate to be treated. . Thereby, a film is uniformly formed on the substrate to be processed W.

Further, on the inner wall opposed to the nozzle plate _{9 3 b 1 ~ 9 3 b} 3, the recess _{9 3 C l ~ 9 3 c} 3 that acts as a gas pocket is formed. Since the recess 9 ₃ ci~ 9 3 c 3 is provided upstream of the injection Iana _{9 3 a ~ 9 3 a n} , the respective injection holes 9 3 a 3 a _n forces et嘖射is the gas respectively the The flow rates can be averaged. This makes it possible to average the flow velocity in the entire process space 84.

Further, each of the concave portions 93 ci to 93 c ₃ communicates with a gas supply hole 93 (^ 93 d ₃₎ penetrating the gas injection nozzle portion 93. The central gas supply hole 93 d ₂ is formed in a position shifted laterally so as not to intersect the communication hole 9 2 is bent in a crank shape.

Then, the center of the gas supply holes 9 3 d _2, the flow control gas by the first mass flow controller 9 7 a is supplied through the gas supply pipe 9 9 _2. Further, the gas supply hole _{9 3 d x, 9 3 d} 3 which is disposed on the left and right gas supply holes 9 3 d ₂ is the second mass flow controller 9 7 b by the flow controlled gas a gas supply pipe 9 Supplied through 9 9 ₃ .

The first mass flow controller 9 7 a及Pi second mass flow controller 9 7 b is Ri Contact is connected to the gas supply unit 3 4 through the gas supply pipe 9 9 _4, 9 9 _5, gas The flow rate of the gas supplied from the supply unit 34 is controlled to a preset flow rate. The first mass flow controller 9 7 a及Pi gas supplied from the second mass flow controller 9 7 b, the gas supply hole 9 through the gas supply pipe 9 9 ~ 9 9 ₃ 3 d丄~ 9 3 d ₃ leads to, after being filled into the recesses 9 3 c! ~ 9 3 c 3, is injected toward the process space 8 4 from嘖射hole 9 3 a E ~ 9 3 a _n.

Gas process space '8 4, the process chamber 2 2 front 2 2 a respective nozzle plates that Mashimasu extending in the lateral direction of 9 3 b ~ 9 3 b嘖射hole 9 3 ₃ a丄~ 9 3 to be injected toward the full width of the processing space 8 4 from a _n, it flows at a constant flow rate across the process space 8 4 (laminar flow) into the processing vessel 2 2 rear 2 2 b side.

Further, on the rear part 2 2b side of the processing container 22, it extends in the width direction of the rear part 22 b. Since the rectangular exhaust port 74 is open, the gas in the process space 84 flows backward, and is exhausted to the exhaust path 32 at a constant flow rate (laminar flow). Further, in the present embodiment, since two systems of flow control are possible, for example, different flow control can be performed by the first mass flow controller 97a and the second mass flow controller 97b.

Thereby, it is also possible to change the flow rate (flow velocity) of the gas supplied into the process space 84 to change the gas concentration distribution in the process space 84. Further, different types of gases can be supplied by the first mass flow controller 97a and the second mass flow controller 97b.For example, the flow rate of nitrogen gas can be controlled by the first mass flow controller 97a. Then, the flow rate of the oxygen gas can be controlled by the second mass flow controller .97b. Examples of the used gas include an oxygen-containing gas, a nitrogen-containing gas, and a rare gas.

(2) Here, the configuration of the heater section 24 will be described in detail. FIG. 21 is a longitudinal sectional view showing the configuration of the heater section 24 in an enlarged manner. FIG. 22 is a bottom view showing the heater section 24 in an enlarged manner.

As shown in Fig. 21 and Fig. 22, the heater section 24 has a quartz peruger 1 1 2 placed on an aluminum alloy base 110 and a flange 2 2 c on the bottom 2 c of the processing vessel 2 2. Fixed through 140. And, in the internal space 113 of the quartz peruger 112, the SiC heater 114 and the heat reflecting member 116 are housed. Therefore, the SiC heater 114 and the heat reflecting member 116 are isolated from the process space 84 of the processing vessel 22, do not come into contact with the gas in the process space 84, and the contamination is reduced. The configuration does not occur.

The SiC susceptor 118 is mounted on the quartz belger 112 so as to face the SiC heater 114, and the temperature is measured by a pie-meter 119. This mouthpiece meter 119 measures the value of the SiC susceptor 118 by the pyroelectric effect (picket electrical effect) generated as the SiC susceptor 118 is heated. The control circuit estimates the temperature of the substrate W to be processed from the temperature signal detected by the pie-mouth meter 119, and based on the estimated temperature, generates heat of the SiC heater 114. T / JP2003 / 012082

Control 20.

Also, as described later, when the pressure in the process space 84 of the processing vessel 22 is reduced, a pressure reducing system is provided so that the pressure difference from the process space 84 is reduced. It operates and is depressurized at the same time. Therefore, the quartz peruger 112 does not need to be made thick (for example, about 30 mm) in consideration of the pressure difference during the depressurization process, and has a small heat capacity, which improves the responsiveness during heating. .

The base 110 is formed in a disc shape, has a central hole 144 through which the shaft 120 d of the holding member 120 passes through in the center, and extends in the circumferential direction inside. A first water channel 144 for the used cooling water is provided. Since the base 110 is made of an aluminum alloy, it has a large coefficient of thermal expansion, but is cooled by flowing cooling water through the first water channel 144.

Further, the flange 140 is fitted to the first flange 144 interposed between the base 110 and the bottom 22 c of the processing container 22 and the inner periphery of the first flange 144. And a second flange 148. On the inner peripheral surface of the first flange 146, a second water channel 150 for cooling water extending in the circumferential direction is provided. The cooling water supplied from the upper cooling water supply section 46 flows through the above-mentioned water channels 144 and 150, and thereby the base 110 and the flange heated by the heat generated by the SiC heater 114. By cooling 140, thermal expansion of base 110 and flange 140 is suppressed. In addition, the lower surface of the base 110 passes through a first inlet port 15 4 through which a first inlet pipe 15 2 through which cooling water flows into the water channel 144 and a water channel 14 4 are connected. There is provided a first outlet 158 to which an outlet pipe 156 for discharging the cooled water is connected. Furthermore, in the vicinity of the outer periphery of the lower surface of the base 110, a plurality of mounting holes 162 for passing through the bonoleto 160 to be fastened to the first flange 146 are provided in the circumferential direction (for example, 8 to 10). (About 1 or 2 places)

A temperature sensor 16 4 composed of a thermocouple for measuring the temperature of the SiC heater 114 and a SiC heater 1 14 near the intermediate position on the lower surface of the base 110 in the radial direction. There is a power cable connection terminal (solton terminal) 1666a to 1666mm to supply the source to the country. The SoC heater 114 has three regions, and the power cable connection terminals 166a to 166f supply power to each region. The + terminal and the one terminal are provided.

Further, on the lower surface of the flange 140, a second inlet 170 through which a second inlet pipe 168 for flowing the cooling water into the water passage 150 is communicated, and an outlet pipe 172 through which the cooling water passing through the water passage 150 is discharged. And a second outlet 174 through which the fluid flows. FIG. 23 is an enlarged longitudinal sectional view showing a mounting structure of the second inflow port 170 and the second outflow port 174. FIG. 24 is an enlarged longitudinal sectional view showing the mounting structure of the flange 140.

As shown in FIG. 23, the first flange 146 is provided with an L-shaped communication hole 146a which is communicated with the second inlet 170 force S. The end of the communication hole 146a communicates with the water channel 150. Further, the second outlet 174 has the same configuration as the second inlet 170 and is connected to the water channel 150.

Since the water channel 150 is formed to extend in the circumferential direction inside the flange 140, the water channel 150 is sandwiched between the step portion 146b of the first flange 146 and the base 110 by cooling the flange 140. The temperature of the flange 112a of the quartz peruger 112 is also indirectly cooled. Thereby, the thermal expansion of the flange 112a of the quartz peruger 112 in the radial direction can be suppressed.

As shown in FIGS. 23 and 24, a plurality of positioning holes 178 are provided at predetermined intervals in the circumferential direction on the lower surface of the flange 112a of the quartz bell jar 112. The positioning hole 178 is a hole into which the pin 176 screwed into the upper surface of the base 110 fits. When the base 110 having a large coefficient of thermal expansion thermally expands in the radial direction, a load is applied to the flange 112a. The pin 176 is formed to have a larger diameter than ^ so that it is not applied. That is, the thermal expansion of the base 110 with respect to the flange 112a of the quartz peruger 112 is permitted by the clearance between the pin 176 and the positioning hole 178.

In addition, since the flange portion 112a of the quartz peruger 112 is provided with a radial clearance with respect to the step portion 146b of the first flange 146, the heat of the base 110 is also increased by this clearance from this point. Inflation is allowed.

The lower surface of the quartz bell jar 1; L 2 112 a is sealed by a seal member (O-ring) 180 attached to the upper surface of the base 110, and the upper surface of the flange 112 a of the quartz Seal member mounted on (O-ring) Sealed by 1 8 2

Further, the upper surfaces of the first flange 1 46 and the second flange 1 48 are sealed by sealing members (O-rings) 18 4 and 18 6 attached to the bottom 2 2 c of the processing vessel 22. Is done. The lower surface of the second flange 148 is sealed by a seal member (O-ring) 188 mounted on the upper surface of the base 110.

As described above, the double seal structure is provided between the base 110 and the flange 140 and between the flange 140 and the bottom 22 c of the processing vessel 22, respectively. Even if one seal member breaks, it can be sealed by another seal member, so that the reliability of the seal structure between the processing container 22 and the heater portion 24 is further improved.

For example, if the quartz peruger 1 1 2 is broken, or if the flange 1 1 2 a is cracked, the quartz perg 1 1 2 is provided by the sealing member 180 located outside the flange 1 1 2 a. The inside airtightness is ensured, and the gas in the processing container 22 is prevented from flowing out.

Alternatively, even if the seal members 180 and 182 closer to the heater portion 24 are deteriorated, the outer seal members 186 and 188 mounted at a position farther from the heater portion 24 will deteriorate. Since the sealing performance between the processing container 22 and the base 110 is maintained, gas leakage due to aging can be prevented.

As shown in FIG. 21, the SiC heater 114 is placed on the upper surface of the heat reflecting member 116 in the internal space 113 of the quartz peruger 112 and the base 111 It is held at a predetermined height by a plurality of clamp mechanisms 190 standing on the upper surface of the zero.

The clamp mechanism 190 includes an outer cylinder 190a that abuts on the lower surface of the heat reflecting member 1 16 and an outer cylinder 190a that penetrates the outer cylinder 190a. It has a shaft 190 b that contacts the upper surface of the heater 114, and a coil panel 192 that presses the outer cylinder 190 a against the shaft 190 b.

Since the clamp mechanism 190 sandwiches the SiC heater 114 and the heat reflecting member 116 with the panel force of the coil panel 192, for example, vibration during transportation is input. In this case, the SiC heater 114 and the heat reflecting member 116 can be held so as not to contact the quartz bell jar 112. Also, the above coil bar Since the panel force of the screw 192 always acts, the loosening of the screw due to thermal expansion is also prevented, and the ic heater 114 and the heat reflecting member 116 are maintained in a stable state without rattling.

Also, each clamp mechanism 190 is S i with respect to the base 110. The height position of the heater 114 and the heat reflecting member 116 can be adjusted to an arbitrary position. The height position of the plurality of clamp mechanisms 190 adjusts the horizontal position of the SiC heater 114 and the heat reflecting member 116. Can be held.

Further, a connection member 194 a for electrically connecting each terminal of the SiC heater 114 and the power cable connection terminals 166 a to 166 f connected to the base is provided in the internal space 113 of the quartz peruger 112. 194194f (however, connecting members 194a and 194c are shown in FIG. 21).

As shown in FIG. 25, the clamp mechanism 190 includes a nut screwed into an upper end of a shaft 190 b inserted through the insertion hole 116 a of the heat reflecting member 116 and the through hole 114 e of the SoC heater 114. By tightening the 193, the L-shaped washers 197 and 199 are pressed in the axial direction via the washers 195 to clamp the SoC heater 114.

In the SiC heater 114, the cylindrical portions 197a and 199a of the L-shaped washers 197 and 199 are inserted into the through holes 114e, and the shaft 190b of the clamp mechanism 190 is inserted into the cylindrical portions 197a and 199a. Communicated. Then, the flange portions 197b and 199b of the L-shaped washers 197 and 199 abut on the upper and lower surfaces of the SiC heater 114.

The shaft 190b of the clamp mechanism 190 is urged downward by the panel force of the coil panel 192, and the outer cylinder 190a of the clamp mechanism 190 is urged upward by the spring force of the coil panel 192. . As described above, since the panel force of the coil panel 192 acts as a clamping force, the heat reflecting member 116 and the SiC heater 114 are stably held, and damage due to vibration during transportation is prevented.

The insertion hole 114e of the SiC heater 114 has a larger diameter than the cylindrical portions 197c and 197d of the L-shaped pushers 197a and 197, and is provided with a clearance. Therefore, the insertion hole 114 2003/012082

When the position of 24 e and the shaft 190 b are displaced relative to each other, the through hole 114 e can be shifted in the horizontal direction while abutting on the flanges 197 b and l 99 b of the L-shaped pushers 197 and 199. This prevents the occurrence of stress due to thermal expansion.

(3) Here, the SiC heater 114 will be described.

As shown in FIG. 26, the SiC heater 114 has a first heat generating portion 114a formed in a circular shape at the center and an arc shape surrounding the outer periphery of the first heat generating portion 114a. And second and third heat generating portions 114b and 114c. Further, a through hole 114 d through which the shaft 120 d of the holding member 120 is inserted is provided at the center of the SoC heater 114.

The heat generating units 114 a to 114 c are connected in parallel to the heater control circuit 196, respectively, and are controlled to an arbitrary temperature set by the temperature controller 198. The heater control circuit 196 controls the amount of heat radiated from the SiC heater 114 by controlling the voltage supplied from the power supply 200 to the heat generating units 114 a to 114 c. Further, if the capacities differ depending on the heating units 114a to 114c, the load on the power supply 200 increases, and therefore, in this embodiment, the resistance is set so that the capacities (2 KW) of the heating units 114a to 114c are the same. Is set.

The heater control circuit 196 includes a control method I for simultaneously energizing the heat generating units 114 a to 114 c to generate heat, and a central first heat generating unit 114 a or an external second heat generating unit depending on the temperature distribution of the substrate to be processed. The control method II for generating either one of the third heat generating portions 114b and 114c and the heat generating portions 114a to 114c in accordance with the temperature change of the substrate W to be processed.

It is possible to select a control method III for simultaneously generating heat from 4c or generating heat from the first heat generating section 114a or any of the second and third heat generating sections 114b and 114c.

When the substrate to be processed KW is heated by the heat generated by each of the heat generating portions 114a to 114c while being rotated while being held by the holding member 120, the peripheral portion is upward due to a temperature difference between the outer peripheral side and the central portion. May be warped. However, in this embodiment,

The 5 iC heater 114 heats the substrate to be processed W via the SiC susceptor 118 having good thermal conductivity, so that the entire substrate to be processed W is heated by the heat from the SiC heater 114 to be processed. The difference between the peripheral part and the central part of the iKW This prevents the substrate W from warping.

(4) Here, the configuration of the quartz bell jar 112 will be described in detail.

FIG. 27A is a plan view showing the structure of the quartz peruger 112, and FIG. 27B is a longitudinal sectional view showing the structure of the quartz peruger 112. FIG. 28A is a perspective view of the configuration of the quartz peruger 112 viewed from above, and FIG. 28B is a perspective view of the configuration of the quartz peruger 112 viewed from below.

As shown in FIG. 27A, FIG. 27B, FIG. 28A, and FIG. 28B, the quartz peruger 112 is formed of transparent quartz, and has a cylindrical portion formed above the above-mentioned flange portion 112a. 112b, a top plate 112c that covers the upper side of the cylindrical portion 112b, a hollow portion 112d extending below the center of the top plate 112c, and a bridge formed over an opening formed inside the flange portion 112a. Beam portion 112e for reinforcement.

Since the flange 112a and the top plate 112c receive a load, they are formed thicker than the cylindrical portion 112b. In addition, since the vertically extending hollow portion 112d and the horizontally extending beam portion 112e intersect inside the quartz peruger 112, the strength in the vertical and radial directions is increased. I have.

A lower end portion of the hollow portion 112d is connected to an intermediate position of the beam portion 112e, and the through hole 112f in the hollow portion 112d also penetrates the beam portion 112e. The shaft 120d of the holding member 120 is inserted into the through hole 112f.

The SiC heater 114 and the heat reflecting member 116 described above are inserted into the internal space 113 of the quartz peruger 112. Further, although the SiC heater 114 and the heat reflecting member 116 are formed in a disk shape, they can be divided into arc shapes, and after entering the internal space 113 avoiding the beam portion 112 e. Assembled.

Further, bosses 112 g to 112 i for supporting the SiC susceptor 118 protrude from the top plate 112 c of the quartz peruger 112 at three locations (120 ° intervals). Therefore, the S i C susceptor 118 supported by the bosses 112 g to 112 i is placed so as to slightly float from the top plate 112 c. For this reason, even if the internal pressure of the processing container 22 changes or the temperature changes and the internal pressure fluctuates below the SiC susceptor 118, contact with the top plate 112c is prevented.

Further, the internal pressure of the quartz peruger 112 is controlled by the processing pressure of the processing vessel 22 as described later. Since the exhaust gas flow rate is controlled by the pressure reducing system so that the pressure and the difference in the process space 84 become 5 OTorr or less, the thickness of the quartz peruger 112 can be made relatively thin. As a result, the thickness of the top plate 112c can be reduced to about 6 to 10 mm, so that the responsiveness can be improved by increasing the heat capacity M of the quartz peruger 112 and increasing the heat conduction efficiency during heating. Becomes possible. Note that the quartz peruger 112 of this embodiment is designed to have a strength to withstand a pressure of lOOTorr.

As shown in FIG. 29, the process space 84 of the processing container 22 is filled with the suction force of the turbo molecular pump 50 through the exhaust path 32 connected to the exhaust port 74 by opening the valve 48a as described above. The pressure is reduced. Further, the downstream of the vacuum pipe 51 connected to the exhaust port of the turbo-molecular pump 50 is connected to a pump (MBP) 201 for sucking the exhausted gas.

The internal space 113 of the quartz nozzle 12 is connected to the bypass line 51 a through the exhaust line 202, and the internal space 124 defined by the casing 122 of the rotary drive unit 28 is connected through the exhaust line 204. Connected to the bypass line 51a. The exhaust pipe 202 is provided with a pressure gauge 205 for measuring the pressure in the internal space 113 and a valve 206 that is opened when the internal space 113 of the quartz peruger 112 is depressurized. As described above, the pulp 48 is provided in the bypass pipe 51a, and the branch pipe 208 that bypasses the valve 48b is provided. The branch pipe 208 is provided with a pulp 210 that is opened at an initial stage of the decompression process, and a variable throttle 211 for narrowing the flow rate more than the pulp 48b.

On the exhaust side of the turbo-molecular pump 50, an opening / closing valve 212 and a pressure gauge 214 for measuring the pressure on the air side are provided. A check valve 218, a throttle 220, and a pulp 222 are provided in a turbo line 216 in which an N 2 line for turbo shaft purging is connected to the turbo molecular pump 50.

The vanolebs 206, 210, 212, and 222 are composed of solenoid valves and are opened by a control signal from a control circuit.

In the decompression system configured as described above, the processing vessel 22, quartz peruger 11 2. When performing the decompression process of the rotation drive unit 28, the pressure is not reduced at once, but is decompressed in a stepwise manner so as to gradually approach the vacuum.

First, by opening the valve 206 provided in the exhaust pipe 202 of the quartz peruger 112, the internal space 113 of the quartz perger 112 and the process space 84 are communicated via the air path 32, and the pressure is reduced. Is made uniform. This reduces the pressure difference between the internal space 113 of the quartz peruger 112 and the process space 84 at the beginning of the pressure reduction step.

Next, the valve 210 provided in the branch conduit 208 is opened to reduce the pressure by the small flow rate restricted by the variable restrictor 211. Thereafter, the valve 48b provided in the bypass line 5la is opened to gradually increase the exhaust flow rate.

Also, the pressure of the quartz peruger 112 measured by the pressure gauge 205 and the pressure of the process space 84 measured by the pressure gauges 85 a to 85 c of the sensor unit 85 are compared, and the difference between the two pressures is 50 Torr or less. When, the pulp 48b is opened. Thus, in the depressurizing step, a pressure difference between the inside and the outside applied to the quartz perger 112 is reduced, and the depressurizing step is performed so that unnecessary stress does not act on the quartz perger 112. After a lapse of a predetermined time, the valve 48a is opened to increase the exhaust flow rate due to the suction force of the turbo molecular pump 50, and the pressure inside the processing vessel 22, the quartz peruger 112, and the rotary driving unit 28 is reduced to a vacuum. .

(5) Here, the configuration of the holding member 120 will be described.

FIG. 30A is a plan view showing the configuration of the holding member 120, and FIG. 30B is a side view showing the configuration of the holding member 120.

As shown in FIGS. 30A and 30B, the holding member 120 includes an arm 120 a to: 120 c supporting the substrate W to be processed, and a shaft 12 to which the arm 120 a to 120 c are connected. 0d. The arms 120 a to 120 c are formed of transparent quartz in order to prevent contamination in the process space 84 and not to shield heat from the SiC susceptor 118. It extends radially in the horizontal direction at intervals of 12 ° with the upper end of 120 d as the central axis.

Further, bosses 120e to 120g that abut on the lower surface of the substrate to be processed project at intermediate positions in the longitudinal direction of the arms 120a to 120c. Therefore, the substrate to be processed JP2003 / 012082

28

W is supported at three points where the bosses 120e to 120g abut.

As described above, since the holding member 120 is configured to support the target substrate W by point contact, the target substrate W is held at a position slightly separated from the SiC susceptor 118. can do. The distance between the SiC susceptor 118 and the substrate W to be processed is, for example, 1 to 20 mm, and preferably about 3 to 1 Omm. That is, the substrate W to be processed is rotated while floating above the SiC susceptor 118, and the SiC susceptor is moved more than when the substrate W is placed directly on the SiC susceptor 118. The heat from 118 is evenly radiated, the temperature difference between the peripheral portion and the central portion is hardly generated, and the warpage of the substrate W due to the temperature difference is also prevented.

The substrate W to be treated is held at a position away from the SiC susceptor 118, so even if warpage occurs due to a temperature difference, it does not contact the SiC susceptor 118, It is possible to return to the original horizontal state as the temperature becomes uniform.

The shaft 120 d of the holding member 120 is formed in a rod shape by opaque quartz, and is formed in the through hole 112 f of the SiC susceptor 118 and the quartz peruger 112. It extends through it. As described above, the holding member 120 holds the substrate W to be processed in the process space 84. However, since the holding member 120 is formed of quartz and laid, the possibility of contamination is higher than that of metal. Absent.

(6) Here, the configuration of the rotation drive unit 28 will be described in detail.

FIG. 31 is a longitudinal sectional view showing the configuration of the rotation drive unit 28 disposed below the heater unit 24. FIG. 32 is an enlarged longitudinal sectional view showing the rotation drive unit 28.

As shown in FIGS. 31 and 32, a holder 230 for supporting the rotation drive unit 28 is fastened to the lower surface of the base 110 of the heater unit 24. The holder 230 is provided with a rotation position detection mechanism 2 32 and a honoleda cooling mechanism 2 34. Further, a ceramic shaft 126 into which the shaft 120 d of the holding member 120 is inserted and fixed is inserted below the holder 230, and rotatably supports the ceramic shaft 126. The fixed casing 122 holding the ceramic bearings 236 and 237 is fixed by a bolt 240.

In the casing 122, the rotating part is composed of the ceramic shaft 126 and the ceramic bearings 236, 237, so that metal contamination is prevented. Two

29 has been stopped.

The casing 122 has a flange 242 through which the bolt 240 is inserted, and a bottomed cylindrical partition wall 244 extending below the flange 238. The outer peripheral surface of the partition wall 2 4 4 is provided with an exhaust port 2 46 to which the exhaust pipe 204 of the pressure reducing system described above communicates, and the gas in the internal space 1 2 4 of the casing 1 2 2 is In the decompression step by the above-described decompression system, the air is exhausted and decompressed. Therefore, the gas in the process space 84 is prevented from flowing out along the axis 120d of the holding member 120.

Further, the driven space magnet 248 of the magnet coupling 130 is accommodated in the internal space 124. The driven magnet 248 is covered with a magnet cover 250 fitted around the outer periphery of the ceramic shaft 126 to prevent contamination, and is connected to the gas in the internal space 124. Mounted so that they do not touch.

The magnet cover 250 is a force par formed in an annular shape from an aluminum alloy, and has an annular space housed therein. It is housed in a state without rattling. Further, the joint portion of the magnet cover 250 is joined without gaps by electron beam welding, and is processed so that silver does not flow out and cause contamination as in the case of welding. ing.

Further, a cylindrical air-side rotating portion 252 is provided on the outer periphery of the casing 122 so as to fit therewith, and is rotatably supported via bearings 255, 255. Have been. On the inner periphery of the atmosphere-side rotating section 25 2, a drive-side magnet 2 56 of the magnet coupling 130 is attached.

The lower end portion 25a of the atmosphere-side rotating portion 252 is connected to the drive shaft 128a of the motor 128 via a transmission member 255. Therefore, the rotational driving force of the motor 128 is set between the driving-side magnet ′ 256 provided in the atmosphere-side rotating part 252 and the driven-side magnet 248 provided in the casing 122. The magnetic force is transmitted to the ceramic shaft 126 and transmitted to the holding member 120 and the substrate W to be processed.

Further, a rotation detection cutout 258 for detecting the rotation of the atmosphere-side rotating unit 255 is provided outside the atmosphere-side rotating unit 255. This rotation detection unit 2 5 8 PC orchid 12082

Disc-shaped slit plates 26 0 and 26 1 attached to the outer periphery of the lower end of the 30-side rotating unit 25 2 and a photointerrupter that optically detects the amount of rotation of the slit plates 260 and 26 1 26, and 26 3.

The photo interrupters 26 2 and 26 3 are fixed to the fixed casing 122 by a bracket 26 4. In the rotation detection unit 255, a pulse corresponding to the rotation angle is simultaneously detected from the pair of photointerrupters 262, 263, and the rotation detection accuracy is determined by comparing the two pulses. Can be increased.

FIG. 33A is a cross-sectional view showing the configuration of the holder cooling mechanism 234, and FIG. 33B is a side view showing the configuration of the holder cooling mechanism 234.

As shown in FIG. 33A and FIG. 33B, the holder cooling mechanism 234 has a water channel 230a for cooling water extending in the circumferential direction inside the holder 230. . The cooling water supply port 230b is connected to one end of the water channel 230a, and the cooling water discharge port 230c is connected to the other end of the water channel 230a.

The cooling water supplied from the cooling water supply unit 46 passes through the cooling water supply port 230b from the cooling water supply port 230a, and then is discharged from the cooling water discharge port 230c. The entire 230 can be cooled.

As shown in FIG. 34, the light emitting element 266 is attached to one side of the holder 230, and the light of the light emitting element 266 is attached to the other side of the holder 230. A photodetector 266 that receives light is attached.

In the center of the holder 230, a central hole 230d through which the shaft 120d of the holding member 120 passes is vertically penetrated, and the central hole 230d There are provided through-holes 230 e and 230 f penetrating in the lateral direction so as to intersect.

The light emitting element 266 is inserted into the end of one through hole 230 e, and the light receiving element 268 is inserted into the end of the other through hole 230 f. Since the axis 120 d is passed between the through holes 230 e and 230 f, the rotational position of the axis 120 d is detected from the output change of the photodetector element 268 It becomes possible to do.

(7) Here, the configuration and operation of the rotational position detecting mechanism 2 32 will be described in detail. You.

FIG. 35A is a diagram illustrating a non-detection state of the rotation position detection mechanism 232, and FIG. 35B is a diagram illustrating a detection state of the rotation position detection mechanism 232.

As shown in FIG. 35A, the shaft 120 d of the holding member 120 has a tangential chamfering process on the outer periphery. When the chamfered portion 120i is rotated to an intermediate position between the light emitting element 2666 and the light receiving element 2668, the light emitted from the light emitting element 2666 is parallel to the emitted light.

At this time, the light from the light emitting element 266 passes the side of the chamfered portion 120i and is irradiated on the light receiving element 268. As a result, the output signal S of the light receiving element 268 is turned on and supplied to the rotational position determination circuit 270.

As shown in FIG. 35B, when the shaft 120 d of the holding member 120 rotates and the position of the chamfered portion 120 i deviates from the intermediate position, the light from the light emitting element 260 Then, the shaft 120 is shut off by d and the output signal S to the rotation position determination circuit 270 is turned off.

FIG. 36A is a waveform diagram showing the output signal S of the light-receiving element 268 of the rotation position detection mechanism 2 32, and FIG. 36B is a pulse signal P output from the rotation position determination circuit 270. FIG.

As shown in 囡 36 A, the light receiving element 268 has a parabolic change in the amount of light received from the light emitting element 266 (output signal S) depending on the rotation position of the shaft 120 d. Change. The rotation position determination circuit 270 sets a threshold value H for the output signal S, and outputs a pulse P when the output signal S exceeds the threshold value H.

The panless P is output as a detection signal for detecting the rotation position of the holding member 120. That is, as shown in FIG. 10, the rotational position determination circuit 27 0 is configured such that the arm portions 120 a to 120 c of the holding member 120 are connected to the contact pins 1 3 8 of the elevating arm 13 2. It judges that it is at a position that does not interfere with a to 138c and does not interfere with the robot hand of the transfer robot 98, and outputs the detection signal (pulse P).

(8) Here, the rotation position control processing executed by the control circuit based on the detection signal (Panores P) output from the rotation position determination circuit 270 will be described.

FIG. 37 is a flowchart for explaining the rotational position control processing executed by the control circuit. As shown in FIG. 37, when there is a control signal instructing the rotation of the processing target device W in S11, the control circuit proceeds to S12 and starts the motor 128. Subsequently, the flow advances to S13 to check whether or not the signal of the light receiving element 268 is ON. If the signal of the light receiving element 268 is on in S13, the process proceeds to S14, and the rotation number of the holding member 120 and the substrate W to be processed is calculated from the period of the detection signal (pulse P). I do.

Subsequently, the process proceeds to S15, where it is checked whether the rotation speed n of the holding member 1200 and the substrate to be processed W is a preset target rotation na. In S 15, if the rotation speed n of the holding member 1 2 ぴぴぴぴ ¾ いないしてしていない does not reach the target rotation speed na, return to S 13 and check whether the rotation speed of the motor 128 Check again. When n = na in S15, since the rotation speed n of the holding member 120 and the substrate W to be processed has reached the target rotation na, the process proceeds to S17 and the motor Check for a stop control signal. In S17, if there is no control signal for stopping the motor, the process returns to S13. If there is a control signal for stopping the motor, the process proceeds to S18 to stop the motor 128. Subsequently, in S19, it is checked whether or not the signal of the light receiving element 268 is on, and this operation is repeated until the signal of the light receiving element 268 is turned on. In this way, the arm portions 120 a to l 20 c of the holding member 120 do not interfere with the contact pins 1 38 a to 1 38 c of the elevating arm 13 2, and the transfer robot 9 It can be stopped at a position without interfering with the robot hand of 8.

In the above rotation position control processing, the case of using the method of calculating the number of rotations from the cycle of the output signal from the light receiving element 268 has been described. For example, the above-described photointerrupters 262, 263 It is also possible to obtain the number of rotations by integrating the output signals.

(9) Here, the configuration of the windows 75 and 76 formed on the side surface of the processing container 122 will be described in detail.

Fig. 38 is a cross-sectional view of the mounting location of the windows 75, 76 as viewed from above. FIG. 39 is a cross-sectional view showing the window 75 in an enlarged manner. FIG. 40 is a cross-sectional view showing the window 76 in an enlarged manner.

As shown in FIG. 38 and FIG. 39, the first window 75 is used for supplying gas to the process space 84 formed inside the processing vessel 122 and for reducing the pressure to a vacuum. The structure is more airtight.

The window 75 has a double structure including transparent quartz 272 and UV glass 274 for blocking ultraviolet rays. The first window frame 278 is screwed to the window mounting portion 276 with screws 277 while the transparent quartz 272 is in contact with the window mounting portion 276 and fixed. A sealing member (O-ring) 280 for hermetically sealing the gap with the transparent quartz 272 is mounted on the outer surface of the window mounting portion 276. Further, on the outer surface of the first window frame 278, the second window frame 282 is screwed with the UV glass 274 in contact with the screw 2.

8 Screwed and fixed in 4.

As described above, the window 75 prevents the ultraviolet rays emitted from the ultraviolet light sources (UV lamps) 86 and 87 from being blocked by the UV glass 27 4 and leaking out of the process space 84. The sealing effect of the sealing member 280 prevents the gas supplied to the process space 84 from flowing out.

The opening 286 penetrating the side surface of the processing container 22 penetrates obliquely toward the center of the processing container 22, that is, toward the center of the substrate W held by the holding member 120. ing. Therefore, although the window 75 is provided at a position deviating from the center of the side surface of the processing container 22, the window 75 is formed in an elliptical shape so that it can be seen wide in the lateral direction, and the state of the substrate W to be processed is externally determined. You can see it.

The second window 76 has the same configuration as the window 75 described above, and has a double structure including a transparent quartz 292 and a UV glass 294 that blocks ultraviolet rays. . The first quartz frame 298 is screwed to the window mounting part 296 with screws 297 and fixed in a state where the transparent quartz 292 contacts the window mounting part 296. . A seal member (O-ring) 300 for hermetically sealing the space between the window mounting portion 296 and the transparent quartz 292 is mounted. In addition, the outer surface of the first window frame 298 has UV glass 2

The second window frame 302 is screwed and fixed with screws 304 with the 94 in contact.

As described above, the window 76 prevents the ultraviolet light emitted from the ultraviolet light sources (UV lamps) 86 and 87 from being blocked by the UV glass 294 and leaking out of the process space 84. The sealing effect of the sealing member 300 prevents the gas supplied to the process space 84 from flowing out. In this embodiment, the configuration in which the pair of windows 75 and 76 are arranged on the side surface of the processing container 22 has been described as an example. However, the present invention is not limited to this, and three or more windows may be provided. Of course, it may be provided at a place other than the side.

(10) Here, each of the cases 102, 104, 106, and 108 constituting the quartz liner 100 will be described.

As shown in FIGS. 9 and 10, the quartz liner 100 is configured by combining a lower case 102, a side case 104, an upper case 106, and a cylindrical case 108, each of which is made of opaque quartz. It is provided for the purpose of protecting the processing container 22 made of aluminum alloy from gas and ultraviolet rays and preventing metal contamination by the processing container 22.

FIG. 41A is a plan view showing the configuration of the lower case 102, and FIG. 41B is a side view showing the configuration of the lower case 102.

As shown in FIGS. 41A and 41B, the lower case 102 is formed in a plate shape having an outline shape corresponding to the inner wall shape of the processing container 22, and has a SoC susceptor 118 and a center in the center thereof.円形 A circular opening 310 facing the substrate to be processed is formed. The circular opening 310 is formed to have a dimension into which the cylindrical case 108 can be inserted, and has a concave portion 310 for inserting the tip portion of the arm portion 120a to 120c of the holding member 120 at the inner periphery. a to 310c are provided at intervals of 120 degrees.

The positions of the recesses 310 a to 310 c are such that the arm portions 120 a to 120 c of the holding member 120 do not interfere with the contact pins 138 a to 138 c of the lifting arm 132, and This is a position that does not interfere with the robot hand.

Further, the lower case 102 is provided with a rectangular opening 312 facing the exhaust port 74 formed at the bottom of the processing container 22. Further, the lower case 102 has positioning protrusions 314a and 314b on the lower surface at asymmetric positions. In addition, a concave portion 310 d is formed on the inner periphery of the circular opening 310 so that a protrusion of a cylindrical case 108 described later is fitted thereto. Further, a stepped portion 315 that fits into the side surface case 104 is provided on a peripheral portion of the lower case 102.

42A is a plan view showing the configuration of the side case 104, FIG. 42B is a front view of the side case 104, FIG. 42C is a rear view of the side case 104, and FIG. 03 012082

35

D is a left side view of the side case 104, and FIG. 42E is a right side view of the side case 104.

As shown in FIGS. 42A to 42E, the side case 104 is formed in a substantially rectangular frame shape in which the outer shape corresponds to the inner wall shape of the processing container 22 and the four corners are R-shaped. And a process space 84 is formed inside.

Also, the side case 104 has an elongated slit 3 16 extending in the lateral direction so as to face the plurality of injection ports 93 a of the gas injection nozzle portion 93 described above on the front surface 104 a. And a U-shaped opening 317 provided at a position facing the communication hole 92 communicating with the remote plasma section 27. In the present embodiment, the slit 316 and the opening 317 are connected to each other, but they may be formed as independent openings.

In the side case 104, a concave portion 318 through which the above-described robot hand of the transfer robot 98 passes is formed on the rear surface 104 b at a position facing the transfer port 94.

In the side case 104, a circular hole 319 facing the sensor unit 85 described above is formed in the left side 104c, and the windows 75, 76 described above are formed in the right side 104d. Holes 320 to 322 facing the sensor unit 77 are formed.

FIG. 43A is a bottom view showing the configuration of the upper case 106, and FIG. 43B is a side view of the upper case 106. FIG.

As shown in FIGS. 43A and 43B, the upper case 106 is formed in a plate shape whose contour corresponds to the inner wall shape of the processing vessel 22, and an ultraviolet light source (UV lamp) 8. Rectangular openings 324, 325 are formed at positions opposite to 6, 87. Further, a step portion 326 fitted to the side case 104 is provided on a peripheral portion of the upper case 106.

In addition, the upper case 106 is provided with circular holes 327 to 329 corresponding to the shape of the lid member 82 and a rectangular hole 340 having a rectangular shape.

FIG. 44A is a plan view showing the configuration of the cylindrical case 108, FIG. 44B is a side longitudinal sectional view of the cylindrical case 108, and FIG. 44C is a cylindrical case 108. FIG. As shown in FIGS. 44A to 44C, the cylindrical case 108 is formed in a cylindrical shape so as to cover the outer periphery of the quartz belger 112, and a lifting arm is provided at the upper end edge. There are provided recesses 108 a to 108 c into which the 13 2 contact pins 1 38 a to 38 c are inserted. Further, the cylindrical case 108 is provided with a positioning projection 108d on the outer periphery of the upper end portion, into which the concave portion 310d of the lower case 102 fits.

(11) Here, the seal structure of the lifter mechanism 30 will be described.

FIG. 45 is a longitudinal sectional view showing the lifter mechanism 30 in an enlarged manner. FIG. 46 is a longitudinal sectional view showing the seal structure of the lifter mechanism 30 in an enlarged manner.

As shown in FIGS. 45 and 46, the lifter mechanism 30 raises and lowers the elevating shaft 13 4 by the drive unit 13 6 to raise and lower the elevating arm 13 2 inserted into the chamber 80. In this case, the outer periphery of the elevating shaft 1 34 inserted into the through hole 80 a of the chamber 80 is covered with a bellows-shaped bellows 3 32 so as to prevent contamination in the champ 80. Is configured.

The bellows 332 has a shape in which the bellows part can expand and contract, and is formed of, for example, Inconel Hastelloy. Further, the through-hole 80a is closed by a lid member 350 into which the elevating shaft 134 is inserted.

Further, a cylindrical ceramic cover 338 is fitted and fixed to a connecting member 336 of the lifting arm 132 to which the upper end of the lifting shaft 133 is fastened by a bolt 334. Since the ceramic cover 338 extends below the connecting member 336, it is provided so as to cover the periphery of the bellows 332 so as not to be directly exposed in the chamber 80.

For this reason, the bellows 3332 extends upward when the elevating arm 1332 is raised in the process space 84, and is covered by a cylindrical cover 38 formed of ceramic. Therefore, the bellows 3332 is not directly exposed to the gas and heat in the process space 84 by the cylindrical cover 338 inserted so as to be able to move up and down into the through hole 80a, and the deterioration due to the gas and heat is prevented. Have been.

(12) Hereinafter, the ultraviolet light radial oxidation treatment on the surface of the substrate W to be processed using the substrate processing apparatus 20 and the remote plasma radical nitridation treatment performed thereafter will be described. 2003/012082

37

(Ultraviolet light radical oxidation treatment)

FIG. 47A is a side view and a plan view showing a case where the substrate to be processed W is subjected to radical oxidation using the substrate processing apparatus 20 of FIG. 2, and FIG. 47B is a configuration of FIG. 47A. FIG.

As shown in FIG. 47A, oxygen gas is supplied into the process space 84 from the gas injection nozzle 93 and flows along the surface of the substrate W to be processed. Pumped through molecular pump 50 and pump 201. By using the turbo molecular pump 50, the process pressure in the process space 84 is set in a range of 10 -3 to 10 -6 T rr required for oxidation of the base by oxygen radicals.

At the same time, oxygen radicals are formed in the oxygen gas stream thus formed by driving the ultraviolet light sources 86, 87, which preferably generate ultraviolet light having a wavelength of 170 nm. When the formed oxygen radicals flow along the surface of the substrate to be processed W, they oxidize the rotating substrate surface. Oxidation of the substrate to be treated by oxygen radicals causes a very thin oxide film with a thickness of 1 nm or less on the silicon substrate surface, especially an oxide film with a thickness of about 0.4 nm, which corresponds to a few atomic layers. Can be formed stably with good reproducibility.

As shown in FIG. 47B, the ultraviolet light sources 86 and 87 are tubular light sources extending in a direction crossing the direction of the oxygen gas flow, and the turbo molecular pump 50 is connected to the exhaust port 74 through the exhaust port 74. It can be seen that the process space 84 is exhausted. On the other hand, the exhaust path indicated by a dotted line in FIG. 47B, which directly leads from the exhaust port 74 to the pump 50, is blocked by closing the pulp 48.

FIG. 48 shows an ultraviolet light irradiation in the substrate processing apparatus 20 of FIG. 2 by setting a silicon oxide film on the surface of the silicon substrate and a substrate temperature of 450 ° C. by the processes of FIGS. 47A and 47B. The relationship between ^ and the oxidation time when formed while varying the strength, oxygen gas flow rate or oxygen partial pressure in various ways is shown. However, in the experiment of Fig. 48, the natural oxide film on the silicon substrate surface was removed prior to radical oxidation, and in some cases, carbon remaining on the substrate surface was removed in ultraviolet-excited nitrogen radicals. The substrate surface is planarized by performing a high-temperature heat treatment at 950 ° C. The excimerane having a wavelength of 172 nm was used as the ultraviolet light sources 86 and 87. Difficult

38 was used.

Referring to FIG. 48, in the data of series 1, the ultraviolet light irradiation intensity was set to 5% of the reference intensity (50 mW / cm2) at the window surface of the ultraviolet light source 24 B, and the process pressure was 66 5 mPa (5 mTo rr). The relationship between the oxidizing time and the oxidizing film thickness when the oxygen gas flow rate was set to 30 SCCM is shown in the series 2 data, where the ultraviolet light intensity was set to zero and the process pressure was set to 133 Pa (l rr), the relationship between the oxidation time and the oxide film thickness when the oxygen gas flow rate was set to 3 SLM. The data of series 3 shows the relationship between the oxidation time and the oxide film thickness when the ultraviolet light intensity is set to zero, the process pressure is set to 2.66 Pa (2 OmTorr), and the oxygen gas flow rate is set to 150 SCCM. The data in series 4 are based on the case where the ultraviolet light irradiation intensity is set to 100%, that is, the reference intensity, the process pressure is set to 2.66 Pa (2 OmTo rr), and the oxygen gas flow rate is set to 150 SCCM. The relationship between oxidation time and oxidation Hff is shown. Furthermore, the data in series 5 shows the oxidation time and the oxidation time when the UV irradiation intensity was set to 20% of the reference intensity, the process pressure was set to 2.66 Pa (20 mTorr), and the oxygen gas flow rate was set to 150 SCCM. The relationship with the oxide film pressure is shown.The data in series 6 shows that the UV irradiation intensity is set to 20% of the reference irradiation intensity, the process pressure is about 67 Pa (0.5 To rr), and the oxygen gas flow rate is 0.5 The relationship between the oxidation time and the oxide film thickness when set to SLM is shown. Series 7 data also shows the oxidation time and oxidation when the UV light intensity is set to 20% of the reference intensity, the process pressure is set to 665 Pa (5 Torr), and the oxygen gas flow rate is set to 2 SLM. For the relationship with HJ ¥, for the data in series 8, the UV light irradiation intensity was set to 5% of the reference intensity, the process pressure was 2.66 Pa (2 OmTo rr), and the oxygen gas flow rate was 150 SCCM. The relationship between the oxidation time and the oxide film thickness when the value is set to is shown below.

In the experiment shown in Fig. 48, the oxide film thickness is obtained by the XPS method. However, there is no unified method for obtaining such a very thin oxide film thickness of less than 1 nm at this time.

Therefore, the inventor of the present invention carried out the separation correction of the background correction mode 3/2 and the 1 2 spin state with respect to the XPS spectrum of the measured Si 2p orbit shown in FIG. Based on the resulting Si _2p ^3/2 XP S spectrum shown in FIG. 50, Lu et al. (ZH Lu, et al., Appl. Phvs ,: Lett. 71 (1997), pp. 2764 ) 2003/012082

39 The thickness d of the oxide film was determined using the equation and coefficient shown in equation (1).

d = λ sin α · In [I ^{χ +} / (] 3 I ⁰⁺ ) + 1] (1) λ = 2.96

] 3 = 0.75

However, in equation (1), α is the detection angle of the XPS spectrum shown in FIG. 55, and is set to 30 ° in the illustrated example. In Equation 1, ^{χ +} is the integrated intensity of the spectrum peak corresponding to the oxide film.

50, which corresponds to the peak seen in the energy region of 102 to 104 eV in FIG. Meanwhile, 1 ⁰⁺ corresponds to the energy region of 1 00 e V near, corresponding to the integrated intensity of the scan Bae Kutorupi over click resulting from the silicon substrate.

Referring to FIG. 48, when the ultraviolet light irradiation power, and thus the density of the formed oxygen radicals, is low (sequences 1, 2, 3, and 8), the oxide thickness of the oxide film is initially 0 nm. However, while the oxide film thickness gradually increases with the oxidation time, the series 4, 5, 6, and 7 in which the UV light irradiation power is set to 20% or more of the reference intensity are schematically shown in Figure 51. As shown in the figure, it is observed that the growth of the oxide film stops after reaching a value of about 0.4 nm after the start of the growth, and the growth is rapidly restarted after a certain dwell time has elapsed.

The relationship between FIG. 48 and FIG. 51 means that an extremely thin oxide film having a thickness of about 0.4 nm can be formed stably in the oxidation treatment of the silicon substrate surface. In addition, as shown in FIG. 48, since the dwell time continues to some extent, it can be seen that the formed oxide film has a uniform thickness. That is, according to the present invention, an oxide film having a thickness of about 0.4 nm can be formed on a silicon substrate to a uniform thickness.

FIGS. 52A and 52B schematically show a process of forming a thin oxide film on such a silicon substrate. It should be noted that these figures greatly simplify the structure on a silicon (100) substrate.

Referring to FIG. 52A, two oxygen atoms are bonded to each silicon atom on the silicon substrate surface to form a single atomic layer of oxygen. In this typical state, the silicon atoms on the substrate surface have two silicon atoms inside the substrate and two silicon atoms on the substrate surface. To form a suboxide.

On the other hand, in the state shown in FIG. 52B, the silicon atom at the top of the silicon substrate is coordinated by four oxygen atoms, and a stable Si ⁴⁺ state is obtained. For this reason, it is considered that the acid rapidly advances in the state of FIG. 52A, and the oxidation stops in the state of FIG. 52B. The thickness of the oxide film in the state of FIG. 52B is about 0.4 nm, which is in good agreement with the oxide film thickness in the stationary state observed in FIG. In the XPS spectrum of FIG. 50, when the oxide film thickness is 0.1 nm or 0.2 nm, the low peak seen in the energy range of 101 to 104 eV corresponds to the suboxide in FIG. The peak appearing in this energy region when the thickness exceeds 0.3 nm is attributable to Si ⁴⁺ , and is considered to indicate the formation of an oxide film exceeding one atomic layer.

Such a stationary phenomenon of the oxide film thickness at a thickness of 0.4 nm is not limited to the UV〇2 radical oxidation process shown in FIGS. 47A and 47B. It is considered that the same method can be used if an oxide film can be formed with high accuracy.

When the oxidation is further continued from the state shown in FIG. 52B, the thickness of the oxide film increases again. FIG. 53 shows a 0.4 nm thick ZrSiox film on the oxide film formed by the ultraviolet light radical oxidation process of FIGS. 47A and 47B using the substrate processing apparatus 20 in this manner. And an electrode film are formed (see FIG. 54B described later), and the relationship between the equivalent thermal oxide film thickness T eq and the leak current Ig obtained for the obtained laminated structure is shown. However, the leakage current characteristics in FIG. 53 are measured with a voltage of Vfb−0.8 V applied between the electrode film and the silicon substrate with reference to the flat band voltage Vfb. For comparison, FIG. 53 also shows the leakage current characteristics of the thermal oxide film. The reduced film thickness shown is for a structure in which an oxide film and a ZrSiox film are combined.

Referring to FIG. 53, when the oxide film is omitted, that is, when the thickness of the oxide film is Onm, the leak current density exceeds the leak current density of the thermal oxide film. It can be seen that eq also becomes a relatively large value of about 1.7 nm. On the other hand, when the Hff of the oxide film is increased from 0 nm to 0.4 nm, thermal oxidation It can be seen that the value of the film equivalent thickness T eq starts to decrease. In such a state it will be interposed between oxide film between the silicon substrate and the Z r S i O _x film, although the physical thickness is equivalent thickness T eq, but it should be actually increases is reduced , which when formed directly on the Z R_〇 ₂ film on a silicon substrate, the diffusion or S i to silicon substrate in Z r as shown in FIG. 5 4 a to Z r S i Ox film Diffusion occurred on a large scale, suggesting that a thick interfacial layer was formed between the silicon substrate and the ZrSiOx film. In contrast, by interposing an oxide film having a thickness of 0.4 nm as shown in FIG. 54B, the formation of such an interface layer is suppressed, and as a result, the equivalent film thickness is reduced. Conceivable. Accordingly, the value of the leakage current decreases with the thickness of the oxide film. However, FIG. 54A and FIG. 54B show schematic cross sections of the sample formed in this way, and an oxide film 442 is formed on a silicon substrate 441, and an oxide film 44 2 shows a structure in which a ZrSiox film 443 is formed on 2. On the other hand, when the thickness of the oxide film exceeds 0.4 nm, the value of the thermal oxide film equivalent thickness starts to increase again. In the range where the thickness of the oxide film exceeds 0.4 nm, the value of the leak current decreases as the thickness increases, and the increase in the conversion is due to the increase in the physical thickness of the oxide film. It is considered to be.

Thus, the film thickness near 0.4 nm where the oxide film growth stops observed in Fig. 48 • The thickness corresponds to the minimum value of the converted film thickness of the system consisting of the oxide film and the high dielectric film. The diffusion of metal elements such as Zr into the silicon substrate is effectively Jh by the stable oxide film shown in Fig. 52 (B), and the thickness of the oxide film is further increased. However, it can be seen that the effect of inhibiting diffusion of metal elements is not so high.

Furthermore, the value of leakage current when using an oxide film with a thickness of 0.4 nm is about two orders of magnitude smaller than the value of leakage current of a corresponding thickness of thermal oxide film. It can be seen that the gate leakage current can be minimized by using it for the gate insulating film of the M〇S transistor.

In addition, as a result of the oxide film growth stopping phenomenon at 0.4 nm described in FIG. 48 or FIG. 51, as shown in FIG. 55A, the oxide film 442 formed on the silicon substrate 441 was formed. Even if there is an initial change in film thickness or irregularities, the increase in film thickness during oxide film growth stops near 0.4 nm as shown in Fig. 55B. Within the period By continuing the growth of the oxide film in this manner, an oxidized film 442 having a very flat and uniform thickness shown in FIG. 55C can be obtained.

As mentioned earlier, there is currently no unified thickness measurement method for very thin oxide films. Therefore, the lff value itself of the oxide film 442 in FIG. 55C may be different depending on the measurement method. However, for the reasons explained above, the thickness at which oxide film growth stops is known to be the thickness of two atomic layers, and therefore, the preferred oxide film thickness is It is considered to be about 2 atomic layers thick. In this preferable thickness, a region having a thickness of three atomic layers is formed partially so that a thickness of two atomic layers is secured over the entire oxide film 442. included. That is, it is believed that the preferred thickness of oxide film 442 is actually in the range of 2-3 atomic layers.

[Remote plasma radical nitriding]

FIG. 56 shows a configuration of a remote plasma unit 27 used in the substrate processing apparatus 20.

As shown in FIG. 56, the remote plasma section 27 has a gas circulation passage 27a, a gas inlet 27b and a gas outlet 76c communicating with the gas circulation passage 27a, and is typically formed. It includes a block 27A made of aluminum, and a ferrite core 27B is formed in a part of the block 27A.

The inner surfaces of the gas circulation passage 27a, the gas inlet 27b, and the gas outlet 27c are provided with a fluororesin coating 27d, and the coil wound around the ferrite core 27B has a frequency of 40. By supplying a high frequency of 0 kHz, a plasma 27C is formed in the gas circulation passage 27a.

A force that forms nitrogen radicals and nitrogen ions in the gas circulation passage 27 a with the excitation of the plasma 27 C Nitrogen ions disappear when circulating in the circulation passage 27 a, and the gas outlet The nitrogen radical N2 * is mainly released from 27c. Further, in the configuration of FIG. 56, by providing an ion filter 27 e grounded to the gas outlet 27 c, charged particles such as nitrogen ions are removed, and nitrogen is added to the process space 84. Only radicals are supplied. Further, even when the ion filter 27 e is not grounded, the structure of the ion filter 27 e is a diffusion plate. It is possible to sufficiently remove charged particles such as nitrogen ions.

FIG. 57 shows the relationship between the number of ions formed by the remote plasma section 27 and the electron energy in comparison with the case of a microphone mouth-wave plasma source.

As shown in Fig. 57, when plasma is excited by microwaves, ionization of nitrogen molecules is promoted and a large amount of nitrogen ions are formed. On the other hand, when the plasma is excited by a high frequency of 500 kHz or less, the number of formed nitrogen ions is greatly reduced. When performing the plasma treatment by the microphone port wave will require high vacuum ^{^{1. 33X 10- 3 ~ 1.33X 10- 6}} P a (10- 1 ~ 10 one ⁴ the To rr) as shown in FIG. 58 Force RF plasma processing can be performed at relatively high pressures of 13.3-13.3 kPa (0.1-100 rr). Table 1 below shows the comparison of ionization energy conversion efficiency, dischargeable pressure range, plasma power consumption, and process gas flow rate between when plasma is excited by microwave and when plasma is excited by high frequency. Is shown.

Referring to Table 1, the ionization energy conversion efficiency, while about 1 X 10_ ² about the case of microwave excitation in the case of RF excitation, Ri Contact reduced to about 1 X 10 one ^7, also The dischargeable pressure is about ^ 0. lmTo rr ~ 0. lTo rr (133 mPa ~ l 3.3 P _a ) for microwave excitation, whereas for RF excitation ^ is 0.1 ~ :! OOTo rr (13.3 Pa ~: 13.3 kPa) Power. As a result, plasma power consumption is higher for RF excitation than for microwave excitation, and process gas flow rates are much higher for RF excitation than for microwave excitation.

In the substrate processing apparatus 20, the nitridation of the oxidation film is performed not with nitrogen ions but with nitrogen radicals N ₂ *. Therefore, it is preferable that the number of excited nitrogen ions is small. From the viewpoint of minimizing damage to the substrate to be processed, the number of excited nitrogen ions is preferably small. Further, in the substrate processing apparatus 20, the number of excited nitrogen radicals is small, and a very thin pace oxide film having a thickness of at most about 2 to 3 atomic layers under the high dielectric gate insulating film is nitrided. It is suitable to do.

FIGS. 59A and 59B are side views and plan views showing the case where the substrate to be processed W is subjected to radial nitriding using the substrate processing apparatus 20.

As shown in FIGS. 59A and 59B, Ar gas and nitrogen gas are supplied to the remote plasma section 27, and the plasma is excited by high frequency at a frequency of several hundred kHz. Nitrogen radicals are formed. The formed nitrogen radicals flow along the surface of the substrate W to be processed, and are exhausted through the exhaust port 74 and the pump 201. As a result, the process space 84 has a process pressure in the range of 1.33 Pa to 13.3 kPa (0.01 to: L00Torr) suitable for radical nitridation of the substrate W. Is set to. The nitrogen radicals thus formed, when flowing along the surface of the substrate to be processed W, nitride the surface of the substrate to be processed w.

In the nitridation step shown in FIGS. 59A and 59B, in the purge step prior to the nitridation step, the valves 48 a and 212 are opened, and the valve 48 a is closed, so that the process space 8 is closed. pressure of 4 ^{1. 3 3 X 1 0- 1} ~ 1. it is to a pressure of ^{3 3 X 1 0- 4 P a} , the oxygen and moisture remaining in the process space 8 4 is purged, thereafter In the nitriding process, the valves 48 a and 212 are closed, and the turbo molecular pump 50 is not included in the exhaust path of the process space 84.

As described above, by using the substrate processing apparatus 20, a very thin oxide film can be formed on the surface of the substrate W to be processed, and the oxide film surface can be further nitrided. Figure 60A shows the oxide film formed on the Si substrate to a thickness of 2.◦ nm by thermal oxidation by the substrate processing apparatus 20 using the remote plasma unit 27, as shown in Table 2. Fig. 6 shows a nitrogen concentration distribution in the oxide film when nitrided under the conditions, and Fig. 6 OB shows a relationship between the nitrogen concentration distribution and the oxygen concentration distribution in the same oxide film. Table 2

As shown in Table 2, during RF nitridation using the substrate processing apparatus 20, nitrogen was flowed into the process space 84 at a flow rate of 50 SCCM, and Ar was flowed at a flow rate of 2 SLM. in supply, but nitriding process is performed at a pressure of l T orr (1 3 3 P a), over before starting nitriding且process space 8 4 of the internal pressure of ^{1 0- 6 T orr (1 .3} 3 Reduce the pressure to about X 10 _ ⁴ P a) and purge the remaining oxygen or moisture sufficiently. For this reason, during the nitriding treatment performed at a pressure of about l Torr, the residual oxygen is diluted with Ar and nitrogen in the process space 84, and the residual oxygen concentration, and hence the heat of the residual oxygen, is reduced. The mechanical activity is very small.

On the other hand, in the nitridation process using microwave plasma, the processing pressure during the nitridation process is almost the same as the purge pressure, and therefore, the residual oxygen has high thermodynamic activity in the plasma atmosphere. Conceivable.

Referring to FIG. 60A, when nitridation was performed by the microphone mouth-wave excited plasma, the concentration of nitrogen introduced into the oxide film was limited, and nitridation of the oxide film did not substantially proceed. You can see that. On the other hand, when nitriding by RF excitation plasma as in this example, the nitrogen concentration in the oxidized film changes like a fiber with depth, reaching a concentration close to 20% near the surface. You can see that.

FIG. 61 shows the principle of the measurement of FIG. 60A performed using XPS (X-ray spectroscopy spectrum).

Referring to FIG. 61, a sample in which an oxide film 4 1 2 was formed on a silicon substrate 4 1 1 Is irradiated with X-rays obliquely at a predetermined angle, and the excited X-ray spectrum is detected at various angles by the detectors DET1 and DET2. At that time, for example, in the detector DET1 set at a deep detection angle of 90 °, the path of the excited X-rays in the oxide film 412 is short, so that the X-ray spectrum detected by the detector DET1 has an oxide film. 41 The detector DET 2 set at a shallow detection angle has a longer path of the excited X-rays in the oxide film 12, whereas the detector DET 2 set at a shallower detection angle has a longer path. The information near the surface of is detected.

FIG. 60B shows the relationship between the nitrogen concentration and the oxygen concentration in the oxide film. However, in Fig. 6 OB, the oxygen concentration is represented by the X-ray intensity corresponding to the Ols orbit. Referring to FIG. 60B, when the nitriding of the oxide film was performed by the RF remote plasma as in the present invention, the oxygen concentration decreased with the increase in the nitrogen concentration, and the nitrogen concentration in the oxide film increased. It can be seen that the atoms have replaced the oxygen atoms. On the other hand, when nitriding of the oxide film is performed by the microphone mouth-wave plasma, such a substitution relationship is not observed, and a relationship in which the oxygen concentration decreases with the nitrogen concentration is not observed. In particular, in Fig. 60B, an increase in oxygen concentration was observed in the case where 5 to 6% of nitrogen was introduced by microwave nitridation, suggesting that the oxide film was formed together with nitridation. are doing. Such an increase in oxygen concentration due to microwave nitriding is performed in a case where microwave nitriding is performed in a high vacuum and oxygen or moisture remaining in the processing space is high frequency remote plasma nitriding. This is probably because the gas is not diluted by Ar gas or nitrogen gas and has high activity in the atmosphere. FIG. 62 shows that an oxide film is formed to a thickness of 4 A (0.4 nm) and 7 A (0.7 nm) in the substrate processing apparatus 20, and this is formed using the remote plasma section 27 shown in FIG. A, shows the relationship between the nitriding time and the nitrogen concentration in the film when nitriding is performed in the nitriding step of FIG. 59B. FIG. 63 shows a state in which nitrogen is biased on the surface of the silicon oxide film due to the nitriding treatment of FIG. FIGS. 62 and 63 also show the case where the oxide film was formed to a thickness of 5 A (0.5 nm) and 7 A (0.7 nm) by rapid thermal oxidation treatment.

Referring to FIG. 62, the nitrogen concentration in the film increases with the nitridation time for any of the oxide films, but particularly for the two atomic layers formed by ultraviolet radical oxidation. In the case of a corresponding oxide film having a thickness of 0.4 nm, or in the case of a thermal oxide film having an IU of 0.5 nm close thereto, the same film forming conditions are used because the oxide film is thin. In this case, the nitrogen concentration in the film increased.

FIG. 63 shows the result of detecting the nitrogen concentration in FIG. 61 by setting the detectors DET1 and DET2 to the detection angles of 30 ° and 90 °, respectively.

As can be seen from Fig. 63, the vertical axis in Fig. 63 shows the X-ray spectrum intensity from nitrogen atoms segregated on the film surface obtained at a detection angle of 30 ° at a detection angle of 90 °. It is divided by the value of the X-ray spectrum intensity from the nitrogen atoms dispersed throughout the obtained film, and this is defined as the nitrogen segregation rate. If this value is 1 or more, the surface is biased by nitrogen.

Referring to Fig. 63, when the oxide film was formed on the surface of the substrate by ultraviolet light-excited oxygen radical treatment, the nitrogen partialization rate became 1 or more, and the nitrogen atoms were initially segregated on the surface. It is considered that the oxynitride film is in a state like 12 A. It is also apparent that the particles are almost uniformly distributed in the film after performing the nitriding treatment for 90 seconds. In addition, it can be seen that the distribution of nitrogen atoms in the other films becomes almost uniform by the nitriding treatment for 90 seconds.

In the experiment shown in FIG. 64, in the substrate treatment << place 20, the ultraviolet radical oxidation treatment and the remote plasma nitridation treatment were repeatedly performed on 10 wafers (wafer # 1 to wafer # 10). FIG. 64 shows the thickness variation of each oxynitride film obtained in this manner for each wafer. However, the results in FIG. 64 indicate that the thickness of the oxide film obtained by XPS measurement was 0.4 when the ultraviolet light sources 86 and 87 were driven in the substrate processing apparatus 20 to perform the ultraviolet radical oxidation treatment. The oxide film thus formed is then formed into an oxynitride film containing about 4% of nitrogen atoms by a nitriding treatment performed by driving the remote plasma unit 27. If you convert it, you have everything.

Referring to FIG. 64, the vertical axis shows ff obtained by ellipsometry for the oxynitride film obtained in this manner. As can be seen from FIG. 64, the obtained value is approximately 8 A (0 8 nm).

Fig. 65 shows that the substrate processing equipment 20 uses a 0.4 nm oxide film on a silicon substrate. The results obtained by examining the increase in Hff due to nitridation when formed by a radical oxidation process using ultraviolet light sources 86 and 87 and then nitrided by a remote plasma unit 27 are shown.

Referring to Fig. 65, the oxide film, which had a thickness of about 0.38 nm at the beginning (before nitriding), had a thickness of 4 to 7% when nitrogen was introduced by nitriding. Is increased to about 0.5 nm. On the other hand, when nitrogen atoms were introduced at about 15 ° / ₀ by nitriding, the film thickness increased to about 1.3 nm. In this case, the introduced nitrogen atoms passed through the oxide film and It is considered that they penetrate into the substrate and form a nitride film.

In FIG. 65, the relationship between the nitrogen concentration and the film thickness for an ideal model structure in which only one layer of nitrogen is introduced into the 0.4 nm thick oxide film is shown.

Referring to FIG. 65, in this ideal model structure, after nitrogen atom introduction is about 0.5 nm, the increase in film thickness is about 0.1 nm, and the nitrogen concentration is about 12%. It becomes. Based on this model, it is concluded that, when the oxide film is nitrided by the substrate processing apparatus 20, it is preferable to suppress the film thickness 抑制する to about 0.1 to 0.2 nm. At that time, the amount of nitrogen atoms taken into the film is estimated to be about 12% at the maximum.

In the above description, an example in which a very thin base oxide film is formed using the substrate processing apparatus 20 has been described. However, the present invention is not limited to such a specific embodiment, and is not limited to a silicon substrate or a silicon substrate. It can be applied to form a high quality oxide, nitride or oxynitride film on a silicon layer to a desired thickness.

Although the present invention has been described with reference to preferred embodiments, the present invention is not limited to the above-described specific embodiments, and various modifications and changes can be made within the scope of the claims. .

Claims

The scope of the claims

1. A processing vessel with a processing space defined inside,

A heater for heating the substrate to be processed inserted into the processing space to a predetermined temperature; a plurality of arms for supporting the substrate for processing at a position facing the heater; and one end supporting the plurality of arms. A holding member having a shaft having the other end inserted through the heater portion;

Rotation driving means for rotationally driving the shaft of the holding member,

A substrate processing apparatus comprising:

2. In the substrate processing apparatus described in claim 1,

(4) The substrate processing apparatus, wherein the plurality of arms are formed of transparent quartz.

3. In the substrate processing apparatus described in claim 1,

The substrate processing apparatus according to claim 1, wherein the plurality of arms include three arms formed to extend radially in the horizontal direction at intervals of 120 degrees.

4. In the substrate processing apparatus described in claim 2,

5. In the substrate processing apparatus described in claim 1,

The substrate processing apparatus, wherein the plurality of arms have projections that make point contact with the substrate to be processed.

6. In the substrate processing apparatus according to claim 2,

The plurality of arms have projections that make point contact with the substrate to be processed.

7. In the substrate processing apparatus according to claim 3,

8. In the substrate processing apparatus described in claim 1,

The substrate processing apparatus, wherein the shaft is formed of opaque quartz.

9. In the substrate processing apparatus described in claim 1, The shaft is rotatably supported by a ceramic bearing.

10 In the substrate processing apparatus according to claim 1,

Detecting means for detecting the rotational position of the shaft;

Based on the signal from the detecting means, the rotational positions of the plurality of arms are located at a level that does not interfere with the transporting means for transporting the substrate to be processed and the lifter mechanism for lifting and lowering the substrate to be processed. Determining means for determining

A substrate processing apparatus comprising:

1 1. In the substrate processing apparatus described in claim 10,

The substrate processing apparatus, wherein the detecting unit detects a position of a chamfer provided on an outer periphery of a shaft of the holding member.

1 2. In the substrate processing apparatus described in claim 11,

The substrate processing, comprising: a light emitting element provided in a radial direction of an axis of the tiif self-holding member; and a light receiving element provided at a position facing the light emitting element via the axis. apparatus.

1 3. In the substrate processing apparatus described in claim 12,

When the light from the light emitting element passes through the chamfered portion of the shaft and is received by the light receiving element, the rotation position of the plurality of arms transfers the substrate to be processed. A substrate processing apparatus that determines that the substrate is at a position that does not interfere with a lifter mechanism that raises and lowers the substrate to be processed.