JP2004006614A - Nitriding method, semiconductor device and its manufacture, substrate processing device, and substrate processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a nitriding method for minimizing film increase and stably nitriding an extremely thin oxide film or oxynitride film whose film thickness is 0.4 nm or less. <P>SOLUTION: A nitrogen radical is formed by high frequency plasma, the formed nitrogen radical is supplied on a gas flow flowing along the surface of the oxide film or the oxynitride film formed by an ultraviolet light excitation radical on a substrate, and the film surface is nitrided. <P>COPYRIGHT: (C)2004,JPO

Description

表１を参照するに、イオン化エネルギ変換効率は、マイクロ波励起の場合に約１×１０^−２程度であるのに対し、ＲＦ励起の場合、約１×１０^−７まで減少しており、また放電可能圧力はマイクロ波励起の場合０．１ｍＴｏｒｒ〜０．１Ｔｏｒｒ（１３３ｍＰａ〜１３．３Ｐａ）程度であるのに対し、ＲＦ励起の場合には、０．１〜１００Ｔｏｒｒ（１３．３Ｐａ〜１３．３ｋＰａ）程度であることがわかる。これに伴い、プラズマ消費電力はＲＦ励起の場合の方がマイクロ波励起の場合よりも大きく、プロセスガス流量は、ＲＦ励起の場合の方がマイクロ波励起の場合よりもはるかに大きくなっている。
【００９９】
図３の基板処理装置では、酸化膜の窒化処理を窒素イオンではなく窒素ラジカルＮ_２＊で行っており、このため励起される窒素イオンの数は少ない方が好ましい。また被処理基板に加えられるダメージを最小化する観点からも、励起される窒素イオンの数は少ないのが好ましい。さらに図３の基板処理装置では、励起される窒素ラジカルの数も少なく、高誘電体ゲート絶縁膜下の非常に薄い、せいぜい２〜３原子層程度の厚さしかないベース酸化膜を窒化するのに好適である。このような高周波プラズマ励起窒素ラジカルを使って行う酸化膜の窒化処理を、以下ではＲＦ−Ｎ_２処理と称する。
【０１００】
先にも説明したように、図１３のリモートプラズマラジカル源２６を使うことにより、図３の基板処理装置２０において大流量のプロセスガスを処理容器２１中に導入することが可能になるため、このようなＲＦ−Ｎ_２処理では結果的に基板表面における窒素濃度分布が均一な優れた窒化処理が可能になる。
【０１０１】
プロセスガス流量を増大させた場合、窒化される領域はプロセスガス流量が少ない場合と異なり、図３におけるプラズマ源２６と排気口２１Ａを結ぶ基板中心軸近傍の領域に限定され、しかもＡｒガスと窒素ガスの流量を合計したプロセスガス流量を制御することにより、基板上での前記窒化領域の、前記排気口２１Ａの方向への延在量を調整することができる。そこで前記延在量を最適化した上で被処理基板Ｗを回転させることにより、基板表面上における窒素濃度の均一性が向上する。なお、図３の構成ではＡｒガスを窒素ガスに添加していることで窒素ラジカルの寿命が長くなっている効果も考えられ、Ａｒガスの添加が本発明のＲＦ−Ｎ_２処理における面内均一性を向上させている可能性もある。
【０１０２】
またマイクロ波プラズマを使った窒化処理においても、大きなガス流量での窒化処理が可能であれば、リモートプラズマ窒化処理において到達される面内均一性と同程度の面内均一性を実現できる可能性がある。
【０１０３】
図１６（Ａ），（Ｂ）は、それぞれ図３の基板処理装置２０を使って被処理基板Ｗのラジカル窒化（ＲＦ−Ｎ_２処理）を行う場合を示す側面図および平面図である。
【０１０４】
図１６（Ａ），（Ｂ）を参照するに、リモートプラズマラジカル源２６にはＡｒガスと窒素ガスが供給され、プラズマを数１００ｋＨｚの周波数で高周波励起することにより窒素ラジカルが形成される。形成された窒素ラジカルは前記被処理基板Ｗの表面に沿って流れ、前記排気口２１Ａおよびポンプ２４を介して排気される。その結果前記プロセス空間２１Ｂは、基板Ｗのラジカル窒化に適当な、１．３３Ｐａ〜１．３３ｋＰａ（０．０１〜１０Ｔｏｒｒ）の範囲のプロセス圧に設定される。特に６．６５〜１３３Ｐａ（０．０５〜１．０Ｔｏｒｒ）の圧力範囲を使うのが好ましい。このようにして形成された窒素ラジカルは、前記被処理基板Ｗの表面に沿って流れる際に、被処理基板Ｗの表面を窒化する。
【０１０５】
図１６（Ａ），（Ｂ）の窒化工程では、窒化工程に先立つパージ工程では前記バルブ２３Ａおよび２３Ｃが開放され、バルブ２４Ａが閉鎖されることで前記処理空間２１Ｂの圧力が１．３３×１０^−１〜１．３３×１０^−４Ｐａの圧力まで減圧され、処理空間２１Ｂ中に残留している酸素や水分がパージされるが、その後の窒化処理ではバルブ２３Ａおよび２３Ｃは閉鎖され、ターボ分子ポンプ２３Ｂはプロセス空間２１Ｂの排気経路には含まれない。
【０１０６】
このように、図３の基板処理装置２０を使うことにより、被処理基板Ｗの表面に非常に薄い酸化膜を形成し、その酸化膜表面をさらに窒化することが可能になる。
【０１０７】
図１７（Ａ）は、図３の基板処理装置２０によりシリコン基板上に熱酸化処理により２．０ｎｍの厚さに形成された酸化膜を、図１３のＲＦリモートプラズマ源２６を使って、表２に示す条件でＲＦ−Ｎ_２処理を行った場合の前記酸化膜中における窒素濃度分布を示し、図１７（Ｂ）は、同じ酸化膜中における窒素濃度分布と酸素濃度分布との関係を示す。
【０１０８】
【表２】

表２を参照するに、基板処理装置２０を使ったＲＦ−Ｎ_２処理の際には、前記処理空間２１Ｂ中に窒素を５０ＳＣＣＭの流量で、またＡｒを２ＳＬＭの流量で供給し、窒化処理は１Ｔｏｒｒ（１３３Ｐａ）の圧力下で行われるが、窒化処理開始前に一旦処理空間２１Ｂの内圧を１０^−６Ｔｏｒｒ（１．３３×１０^−４Ｐａ）程度まで減圧し、内部に残留している酸素あるいは水分を十分にパージしている。このため、前記１Ｔｏｒｒ程度の圧力で行われる窒化処理（ＲＦ−Ｎ_２処理）の際には、前記処理空間２１Ｂ中において残留酸素はＡｒおよび窒素により希釈されており、残留酸素濃度、従って残留酸素の熱力学的な活動度は非常に小さくなっている。
【０１０９】
これに対し、マイクロ波プラズマを使った窒化処理では、窒化処理の際の処理圧力がパージ圧と同程度であり、従ってプラズマ雰囲気中において残留酸素は高い熱力学的な活動度を有するものと考えられる。
【０１１０】
図１７（Ａ）を参照するに、マイクロ波励起プラズマにより窒化した場合には酸化膜中に導入される窒素の濃度は限られており、酸化膜の窒化は実質的に進行していないことがわかる。これに対し本実施例のようにＲＦ励起プラズマにより窒化した場合には、酸化膜中において窒素濃度が深さと共に直線的に変化し、表面近傍では２０％近い濃度に達していることがわかる。
【０１１１】
図１８は、ＸＰＳ（Ｘ線分光スペクトル）を使って行う図１７（Ａ）の測定の原理を示す。
【０１１２】
図１８を参照するに、シリコン基板１１上に酸化膜１２を形成された試料には所定の角度で斜めにＸ線が照射され、励起されたＸ線スペクトルを検出器ＤＥＴ１，ＤＥＴ２により、様々な角度で検出する。その際、例えば９０°の深い検出角に設定された検出器ＤＥＴ１では励起Ｘ線の酸化膜１２内における行路が短く、従って前記検出器ＤＥＴ１で検出されるＸ線スペクトルには酸化膜１２の下部の情報を多く含まれるに対し、浅い検出角に設定された検出器ＤＥＴ２では、励起Ｘ線の酸化膜１２中における行路が長く、従って、検出器ＤＥＴ２は主に酸化膜１２の表面近傍の情報を検出する。
【０１１３】
図１７（Ｂ）は、前記酸化膜中における窒素濃度と酸素濃度との関係を示す。ただし図１７（Ｂ）中、酸素濃度はＯ_１ｓ軌道に対応するＸ線強度により表されている。
【０１１４】
図１７（Ｂ）を参照するに、酸化膜の窒化を本発明のようにＲＦリモートプラズマを使ったＲＦ−Ｎ_２処理で行った場合には、窒素濃度の増大に伴って酸素濃度が減少しており、酸化膜中において窒素原子が酸素原子を置換えていることがわかる。これに対し、酸化膜の窒化をマイクロ波プラズマで行った場合には、このような置換関係は見られず、窒素濃度と共に酸素濃度が低下する関係は見られない。また特に図１７（Ｂ）においては、マイクロ波窒化により５〜６％の窒素を導入した例においては酸素濃度の増加が見られており、これは窒化と共に酸化膜の増膜が起こることを示唆している。このようなマイクロ波窒化に伴う酸素濃度の増加は、マイクロ波窒化が高真空中において行われ、従って処理空間中に残留する酸素あるいは水分が高周波リモートプラズマ窒化の場合のようにＡｒガスや窒素ガスにより希釈されることがなく、雰囲気中において高い活動度を有することによるものと考えられる。
【０１１５】
図１９は、図３の基板処理装置２０において酸化膜を４Å（０．４ｎｍ）および７Å（０．７ｎｍ）の厚さに形成し、これを前記リモートプラズマ源２６を使った図１６（Ａ），（Ｂ）のＲＦ−Ｎ_２処理により窒化した場合の窒化時間と膜中の窒素濃度との関係を示す。また図２０は、図１９の窒化処理に伴う窒素の酸化膜膜表面への偏析の様子を示す。なお図１９，２０には、酸化膜を急速熱酸化処理により５Å（０．５ｎｍ）および７Å（０．７ｎｍ）の厚さに形成した場合をも示している。
【０１１６】
図１９を参照するに、膜中の窒素濃度は、いずれの酸化膜であっても窒化処理時間と共に上昇するが、特にＵＶ−Ｏ_２酸化により形成された２原子層分に対応する０．４ｎｍの膜厚を有する酸化膜の場合に、あるいはこれに近い０．５ｎｍの膜厚を有する熱酸化膜の場合には、酸化膜が薄いため、同一の成膜条件において窒素濃度が高くなる。
【０１１７】
図２０は図１８において検出器ＤＥＴ１およびＤＥＴ２をそれぞれ３０°および９０°の検出角に設定して窒素濃度を検出した結果を示す。
【０１１８】
図２０よりわかるように、図２０の縦軸は３０°の検出角で得られる膜表面に偏析している窒素原子からのＸ線スペクトル強度を、９０°の検出角で得られる膜全体に分散している窒素原子からのＸ線スペクトル強度の値で割ったものになっており、これを窒素偏析率と定義する。この値が１以上の場合には、表面への窒素の偏析が生じている。
【０１１９】
図２０を参照するに、酸化膜が前記ＵＶ−Ｏ_２処理により７Åの膜厚に形成されたものの場合，窒素偏析率が１以上となり、窒素原子は当初表面に偏析し、図１の酸窒化膜１２Ａのような状態が実現されているものと考えられる。また、９０秒間のＲＦ−Ｎ_２処理を行った後では、膜中にほぼ一様に分布していることがわかる。また他の膜でも、９０秒間のＲＦ−Ｎ_２処理で、窒素原子の膜中の分布はほぼ一様になることがわかる。
【０１２０】
図２１の実験では、図３の基板処理装置２０において、前記ＵＶ−Ｏ_２処理および以下ＲＦ−Ｎ_２処理を、１０枚のウェハ（ウェハ＃１〜ウェハ＃１０）について繰り返し実行した。
【０１２１】
図２１は、このようにして得られた酸窒化膜のウェハ毎の膜厚変動を示す。ただし図２１の結果は、図３の構成において前記紫外光源２５を駆動して行うＵＶ−Ｏ_２酸化処理の際、ＸＰＳ測定により求めた酸化膜の膜厚が０．４ｎｍになるように酸化膜を形成し、次いでこのようにして形成された酸化膜を、前記リモートプラズマ源２６を駆動して行うＲＦ−Ｎ_２処理により、窒素原子を約４％含む酸窒化膜に変換した場合についてのものである。
【０１２２】
図２１を参照するに、縦軸は、このようにして得られた酸窒化膜についてエリプソメトリにより求めた膜厚を示すが、図２１よりわかるように得られた膜厚はほぼ８Å（０．８ｎｍ）で、一定していることがわかる。
【０１２３】
図２２は、図３の基板処理装置２０により膜厚が０．４ｎｍの酸化膜をシリコン基板上に紫外光源２５を使ったＵＶ−Ｏ_２処理により形成した後、これをリモートプラズマ源２６によりＲＦ−Ｎ_２処理した場合の、窒化による膜厚増を調べた結果を示す。
【０１２４】
図２２を参照するに、当初（ＲＦ−Ｎ_２処理を行う前）膜厚が約０．３８ｎｍであった酸化膜は、前記ＲＦ−Ｎ_２処理により４〜７％の窒素原子を導入された時点で膜厚が約０．５ｎｍまで増大しているのがわかる。一方、ＲＦ−Ｎ_２処理により窒素原子を約１５％導入した場合には膜厚は約１．３ｎｍまで増大しており、この場合には導入された窒素原子が酸化膜を通過してシリコン基板中に侵入し、窒化膜を形成しているものと考えられる。
【０１２５】
図２２中には、厚さが０．４ｎｍの酸化膜中に窒素を一層分だけ導入した理想的なモデル構造についての窒素濃度と膜厚との関係を▲で示している。
【０１２６】
図２２を参照するに、この理想的なモデル構造では、窒素原子導入後の膜厚が約０．５ｎｍとなり、その場合の膜厚の増加は約０．１ｎｍ，窒素濃度は約１２％となる。
【０１２７】
このモデルを基準とすると、図３の基板処理装置２０により酸化膜の窒化を行う場合、膜厚増は同程度の０．１〜０．２ｎｍに抑制するのが好ましいことが結論される。またその際に膜中に取り込まれる窒素原子の量は、最大で１２％程度になると見積もられる。
【０１２８】
図２３（Ａ），（Ｂ）は、図３の基板処理装置２０によりシリコン基板Ｗ上に酸化膜を、シリコン基板Ｗを駆動機構２２Ｃにより回転させながら２ｎｍの厚さに形成し、形成された酸窒化膜の窒素濃度分布および膜厚分布を測定した結果を示す。ただし図２３（Ａ），（Ｂ）の実験は、２ｎｍの厚さに酸化膜を形成されたシリコン基板を回転させながら、１３３Ｐａの圧力下、４５０℃の基板温度でＡｒガスを２ＳＬＭ、窒素ガスを５０ｓｃｃｍの流量供給しながら行っている。図２３（Ａ）中、基板表面のうち窒素が濃集している部分が明るく示されている。また図２３（Ｂ）には、エリプソメトリで求めた酸窒化膜の膜厚とＸＰＳ分析で求めた窒素濃度とが示されている。
【０１２９】
図２３（Ａ），（Ｂ）の結果は、図３の基板処理装置２０においてこのように基板Ｗを回転させ、さらにＡｒガスおよび窒素ガスの流量を最適化することにより、非対称なラジカル流が生じる基板処理装置２０においても、基板Ｗの表面全体にわたり、ほぼ一様な窒素分布を実現することができることを示している。
【０１３０】
図２４は先に説明した図２２に対応する図であり、図２５のフローチャートに示すようなＵＶ−Ｏ_２処理（ステップＳ１）により形成された酸化膜に対してＲＦ−Ｎ_２処理（ステップＳ２）を行って得られた酸窒化膜中の窒素濃度とＸＰＳ法により測定した膜厚との関係を示す。ただし図２４では、前記ＲＦ−Ｎ_２処理に先立つ酸化膜の初期膜厚を様々に変化させている。
【０１３１】
図２４を参照するに、●は、酸化膜初期膜厚が０．４ｎｍである場合のＸＰＳ膜厚と膜中窒素濃度との関係を示し、前記図２２中に●で示した場合に対応するが、図２４の実験では、このようにして得られた酸窒化膜中の窒素濃度は、膜厚が約０．８ｎｍまでの範囲であれば、ＸＰＳ膜厚と共に直線的に増大することがわかる。
【０１３２】
これに対し、図中■で示した例は、酸化膜初期膜厚を０．３ｎｍとした場合に対応するが、やはり得られた酸窒化膜中に窒素濃度はＸＰＳ膜厚と共に、酸化膜初期膜厚が０．４ｎｍの場合とほぼ同一の勾配で、直線的に増大することがわかる。
【０１３３】
そこで、このような酸窒化膜を先に図１で示したような高誘電体ゲート絶縁膜３下のベース酸化膜２として使う場合、前記ベース酸化膜２中に窒素を導入することでシリコン基板１の酸化は抑制されるものの、図２４の関係から、窒素濃度が高すぎると、得られた酸窒化膜の物理膜厚が増大してしまい、高誘電体ゲート絶縁膜３を使う効果が相殺されてしまうことがわかる。
【０１３４】
そこで、このようにＵＶ−Ｏ_２処理により形成された酸化膜（以下ＵＶ−Ｏ_２酸化膜と称する）をＲＦ−Ｎ_２処理して形成された酸窒化膜中に２０％以上の濃度で窒素を導入しようとすると、前記ＵＶ−Ｏ_２酸化膜の初期膜厚は０．４ｎｍよりも小であるのが必要であることがわかる。すなわち、このように高濃度の窒素を導入した酸窒化膜を高誘電体ゲート絶縁膜のベース酸化膜として使う場合には、前記ＵＶ−Ｏ_２酸化膜の初期膜厚を０．４ｎｍよりも小さく設定する必要がある。
【０１３５】
図２６（Ａ）〜（Ｃ）は、ＵＶ−Ｏ_２処理によりシリコン基板１上に酸化膜２を形成し、さらに形成された酸化膜２上に高誘電体膜３としてＨｆＯ_２膜を形成した場合の、Ｓｉ基板１上に形成された構造についてＸＰＳ法により求められたＳｉ_２ｐ軌道のスペクトルを示す。ただし図２６（Ａ）は前記酸化膜２を形成した状態でのスペクトルを、図２６（Ｂ）は前記酸化膜２上にＨｆＯ_２膜を形成した状態でのスペクトルを、さらに図２６（Ｃ）は、このようにして形成されたＨｆＯ_２膜を熱処理した場合のスペクトルを示す。また図２６（Ａ）〜（Ｃ）の各々に対して対応する概略的素子構造を示す。ただし図２６（Ａ）〜（Ｃ）中、先に説明した部分には同一の参照符号を付し、説明を省略する。
【０１３６】
図２６（Ａ）〜（Ｃ）を参照するに、図２６（Ａ）の状態でＳｉ_２ｐ軌道のスペクトルピークＡの他に、ケミカルシフトしたＳｉ_２ｐ軌道の低いスペクトルピークＢが観測されるが、図２６（Ｂ）の状態でピークＢの強度は増大し、特に図２６（Ｃ）の熱処理を行った後の状態では、ピークＢの強度はピークＡの強度に匹敵するまで増大するのがわかる。
【０１３７】
前記ピークＢに対応するケミカルシフトは、基板１や酸化膜２中のＳｉ原子がＨｆＯ_２膜からの酸素原子と結合することで生じるものであり、Ｓｉ_２ｐ軌道スペクトルのケミカルシフトの原因が全てシリコン基板１の界面反応にあると仮定すると、前記ピークＢの面積から、図２６（Ｃ）の熱処理工程に伴う酸化膜２の増膜の程度を見積もることができる。
【０１３８】
図２７は、様々な初期膜厚の酸化膜上にＨｆＯ_２膜を形成し、さらに熱処理を行った場合について、ＨｆＯ_２膜形成前と熱処理後で酸化膜２の膜厚の変化を評価した結果を示す。ただし図２７中、横軸は図２６（Ａ）に対応するＨｆＯ_２膜形成前の酸化膜初期膜厚を、縦軸は図２６（Ｃ）に対応する熱処理後の酸化膜膜厚を示す。
【０１３９】
図２７より、例えばＵＶ−Ｏ_２酸化膜の初期膜厚が０．４ｎｍを超えたところで最終膜厚の減少あるいは停留が起こっているのがわかる。そこで、この増膜の停留がシリコン基板表面における界面反応の抑制に対応すると考えると、ＺｒＳｉＯ_４膜を形成する先の実施例では酸化膜２の膜厚が０．４ｎｍの場合に膜形成が停留するためこの膜厚が最適となっていたが、高誘電体膜を熱処理する場合、このようなシリコン基板表面における界面反応の抑制の観点から、酸化膜２の最適値が０．４ｎｍよりもさらに厚いところに存在している可能性もある。
【０１４０】
このように、界面反応の程度は高誘電体膜の種類あるいはその反応性、後続の熱処理の程度などで変化するため、界面反応を抑制するためには、界面膜とし０．４ｎｍよりも厚い膜が必要になる場合もある。勿論、高誘電体ゲート絶縁膜全体のプロセスは、界面反応が最小になるように設計すべきであり、またベース酸化膜２の膜厚は、理想的には０．４ｎｍであるべきである。結論として、ベース酸化膜２は、２〜４原子層の範囲の膜厚を有するのが好ましく、２〜３原子層の範囲の膜厚を有するのがより好ましく、２原子層の膜厚を有するのが最も好ましい。
［第２実施例］
図２８（Ａ）は、図３の基板処理装置２０を使って行う、本発明の第２実施例によるシリコン基板表面への酸窒化膜の形成工程を示すフローチャート、図２８（Ｂ）は、図３の基板処理装置２０においてシリコン基板表面に酸化膜を形成した後、基板を大気中に取り出し、さらに基板を前記基板処理装置２０の処理容器２１に戻し、前記酸化膜をＲＦ−Ｎ_２処理して酸窒化膜を形成する、図２８（Ａ）の工程に対する比較例による酸窒化膜の形成工程を示すフローチャートである。
【０１４１】
最初に図２８（Ｂ）の比較例を参照するに、ステップ２１において図３の基板処理装置２０中において被処理基板Ｗ表面に、先に説明したＵＶ−Ｏ_２処理工程により紫外光励起酸素ラジカルを使ってシリコン酸化膜を形成し、次にステップ２２において前記被処理基板Ｗを処理容器２１の外にいったん搬出した後、前記処理容器２１内部を高真空状態に排気し、再び被処理基板Ｗを処理容器２１中に戻す。さらにステップ２３において先に説明したＲＦ励起窒素ラジカルを使ったＲＦ−Ｎ_２処理を行い、前記シリコン酸化膜をシリコン酸窒化膜に変換する。
【０１４２】
図２８（Ｂ）の工程では、ステップ２２において前記処理容器２１内部が高真空状態に排気されるため、ステップ２３におけるＲＦ−Ｎ_２処理工程において酸素による汚染がなく、酸化による酸窒化膜の増膜が最小限に抑制されると考えられる。
【０１４３】
これに対し図２８（Ａ）の工程では、基板処理スループットを向上させるためステップ２１に対応するステップ１１のＵＶ−Ｏ_２処理工程を終えた被処理基板Ｗは、そのまま前記処理容器２１中に保持され、ステップ１２のパージ工程の後、ステップ２３に対応したＲＦ励起窒素ラジカルを使ったＲＦ−Ｎ_２処理工程１３により、前記シリコン酸化膜がシリコン酸窒化膜に変換される。
【０１４４】
図２９（Ａ）は、図２８（Ａ）の工程により形成された酸窒化膜のＸＰＳ法により求められた膜厚と、図２８（Ｂ）の工程により形成された酸窒化膜のＸＰＳ法により求められた膜厚とを比較して示す。ただし図２９（Ａ）中、横軸は図２８（Ａ）のステップ１３あるいは図２８（Ｂ）のステップ２３における窒化時間を示している。図２９（Ａ）中、■は図２８（Ａ）のプロセスを、◆は図２８（Ｂ）のプロセスを表す。
【０１４５】
図２９（Ａ）を参照するに、窒化処理の進行と共に酸窒化膜の膜厚も増大するが、図２８（Ａ）のプロセスと図２８（Ｂ）のプロセスとで実質的な差は認められず、図２８（Ａ）の工程においても、十分な酸素パージが実現されていることがわかる。
【０１４６】
図２９（Ｂ）は、このようにして酸窒化膜中に取り込まれた窒素原子の濃度を、図２８（Ａ）のプロセスと図２８（Ｂ）のプロセスとで比較して示す。ただし図２９（Ｂ）中、横軸は図２８（Ａ）のステップ１３あるいは図２８（Ｂ）のステップ２３における窒化時間を示している。図２９（Ｂ）中、■は図２８（Ａ）のプロセスを、◆は図２８（Ｂ）のプロセスを示す。
【０１４７】
図２９（Ｂ）を参照するに、酸窒化膜中に取り込まれる窒素原子の濃度は図２８（Ａ）のプロセスでも図２８（Ｂ）のプロセスでも実質的に差がなく、図２９（Ａ）に見られる増膜は、酸窒化膜中への窒素の導入に起因するものであると解釈される。
【０１４８】
次に本発明の発明者は図３の基板処理装置２０を使い、紫外光源２５の代わりにリモートプラズマ源２６により酸素ラジカルを発生させて酸化膜を形成し（以下、ＲＦ−Ｏ_２処理と称する）、ＲＦ−Ｏ_２処理により形成された酸化膜を前記リモートプラズマ源２６により発生された窒素ラジカルを使ったＲＦ−Ｎ_２処理により窒化することにより酸窒化膜を形成する実験を行った。
【０１４９】
図３０（Ａ）の実験ではステップ３１において前記リモートプラズマ源２６にＡｒガスと酸素ガスを導入してＲＦ−Ｏ_２処理を行ない、ステップ３２において前記処理容器２１を高真空状態にパージした後、Ａｒで処理容器２１を４回パージし、さらにステップ３３において前記リモートプラズマ源２６を使ったＲＦ−Ｎ_２処理を行っている。
【０１５０】
これに対し、図３０（Ｂ）の実験ではステップ４１において前記ステップ３１と同様に前記リモートプラズマ源２６にＡｒとＯ_２を導入してＲＦ−Ｏ_２処理を行ない、その後ステップ４２において被処理基板Ｗを処理容器２１の外に搬出する。この状態で前記処理容器２１内部を高真空状態に排気した後、被処理基板Ｗを処理容器２１に戻し、さらにステップ４３において前記ステップ３３と同様なＲＦ−Ｎ_２処理を行う。
【０１５１】
図３１（Ａ）は、このようにして図３０（Ａ）のプロセスにより形成された酸窒化膜のＸＰＳ法で求めた膜厚を、図３０（Ｂ）のプロセスにより形成された酸窒化膜のＸＰＳ法で求めた膜厚と比較して示す。ただし図３１（Ａ）中、■は図３０（Ａ）のプロセスに対応し、◆は図３０（Ｂ）のプロセスに対応する。
【０１５２】
図３１（Ａ）を参照するに、被処理基板Ｗ上に前記酸化膜を前記リモートプラズマ源２６によるＲＦ−Ｏ_２処理により形成した場合には、図３０（Ａ）のプロセスを使うと実質的な増膜が生じることがわかる。
【０１５３】
図３１（Ｂ）は、図３０（Ａ）のプロセスにより形成された酸窒化膜中の窒素原子の濃度を、図３０（Ｂ）のプロセスにより形成された酸窒化膜中の窒素原子の濃度と比較して示す。ただし図３１（Ｂ）中、■は図３０（Ａ）のプロセスに対応し、◆は図３０（Ｂ）のプロセスに対応する。
【０１５４】
図３１（Ｂ）を参照するに、図３０（Ａ）のプロセスにより形成された酸窒化膜中の窒素濃度は図３０（Ｂ）のプロセスにより形成された酸窒化膜中の窒素濃度よりも低く、図３１（Ａ）に見られる図３０（Ａ）のプロセスにおいて生じる増膜は、主に残留酸素により生じていることがわかる。かかる残留酸素はおそらく前記リモートラジカル源２６中に存在し、図３０（Ａ）の窒化処理ステップ３３において窒素ラジカルが形成されると同時に酸素ラジカルを形成し、酸窒化膜の酸化反応を促進するものであると考えられる。
【０１５５】
このようなことから、図２５のフローチャートに示すように被処理基板表面に非常に薄い酸化膜を形成し、これをＲＦ−Ｎ_２処理して酸窒化膜を形成する場合には、図３で説明した基板処理装置２０を使い、しかも最初の酸化膜の形成を、紫外光励起された酸素ラジカルを使ったＵＶ−Ｏ_２処理により行うのが好ましいことがわかる。
［第３実施例］
図３２は、本発明の第３実施例による酸窒化膜の形成工程を示すフローチャートである。ただし図３２中、先に説明した部分には同一の参照符号を付し、説明を省略する。
【０１５６】
図３２を参照するに、本実施例による酸窒化膜の形成工程は先に図２８（Ａ）で説明した工程と類似しているが、ステップ１２における処理容器２１のパージ工程におけるＡｒガスを使ったパージ回数を０〜４回の間で様々に変化させている。各々のＡｒパージ処理は、前記処理容器２１中にＡｒガスを流す工程と、さらに処理容器２１を高真空状態に排気する工程とにより構成される。
【０１５７】
図３３（Ａ）は、図３２のステップ１２の工程において行ったＡｒパージ処理の回数と、ステップ１３の工程で得られた酸窒化膜のエリプソメトリにより求められた膜厚との関係を示す。
【０１５８】
図３３（Ａ）を参照するに、酸窒化膜の膜厚はＡｒパージの回数にかかわらず、約１．４ｎｍで、一定であることがわかる。
【０１５９】
これに対し図３３（Ｂ）は、図３０（Ａ）の工程において、ステップ３２のＡｒパージ処理の回数を様々に変化させた場合に得られた酸窒化膜の膜厚を示す。
【０１６０】
図３３（Ｂ）を参照するに、酸窒化膜の膜厚はパージ回数と共にわずかではあるが減少しており、ステップ３２のパージ処理が酸窒化膜の酸化による増膜を抑制するのに必要であることを示している。
【０１６１】
図３３（Ａ），（Ｂ）の結果は、図３０（Ａ）のプロセスによる酸窒化膜の形成を行う場合、ステップ１２のパージ工程は必ずしも必要でなく、またこの工程を省略しても、得られる酸窒化膜に増膜は実質的に生じないことを意味している。
［第４実施例］
ところで先にも説明したように、図２４よりＵＶ−Ｏ_２酸化膜のＲＦ−Ｎ_２処理による窒化を行った場合には、窒素濃度が２０％の場合、得られる酸窒化膜の膜厚は０．８ｎｍ程度になるのが避けられない。これよりも酸窒化膜の膜厚を減少させようとすると、ＵＶ−Ｏ_２酸化膜から出発する限り、初期膜厚を０．２あるいは０．１ｎｍ程度、あるいはそれ以下まで減少させる必要がある。
【０１６２】
本実施例では初期膜として、先に説明したＵＶ−Ｏ_２酸化膜の代わりに図３の基板処理装置２０において前記ガスノズル２１ＤからＮＯガスを導入し、紫外光励起を行うことにより原子状酸素と原子状窒素を励起し、励起された原子状酸素と原子状窒素とにより酸窒化処理（以下ＵＶ−ＮＯ処理と称する）を行う。このようにして得られた酸窒化膜、すなわちＵＶ−ＮＯ膜は、初期状態ですでに窒素を含んでおり、これをさらにＲＦ−Ｎ_２処理することにより、膜厚を最小限に抑制しつつ、高い濃度の窒素を膜中に導入することができる。
【０１６３】
図３４は、ＮＯ分子の様々な励起状態におけるポテンシャルカーブを示す（例えばＪ．Ｓ．Ｃｈａｎｇ他、「電離気体の原子・分子過程」東京電機大学出版局，１９８２年を参照）。
【０１６４】
ＮＯ分子の紫外光による光遷移では、基底状態から励起状態Ａ^２Σ^＋，Ｂ^２Πｒ，Ｃ^２Π，Ｄ^２Σ^＋，Ｅ^２Σ^＋への遷移に伴う吸収帯の存在が知られており、それぞれ２２７ｎｍ，２１８ｎｍ，１９２ｎｍ，１８８ｎｍ，１６５ｎｍ以下の光波長で遷移が可能である。
【０１６５】
一方、原子状酸素（Ｏ^３Ｐ）と原子状窒素（Ｎ^４Ｓ^０）を励起可能な波長域は、図３４から１９２ｎｍと１４５ｎｍの間であることがわかる。すなわち、１４５ｎｍ以上の光波長でＮＯ分子を励起することにより、原子状酸素と原子状の窒素とを発生させることが可能である。一方、光波長が前記１４５ｎｍよりも短くなるとラジカル酸素（Ｏ^１Ｄ）が励起されはじめるので、基板処理の際に酸化反応が主体になると考えられる。
【０１６６】
このような事情で、図３の基板処理装置２０において前記紫外光源２５として波長が１９２〜１４５ｎｍの範囲の紫外光源を使うことにより、所望のＵＶ−ＮＯ膜を初期膜として形成することができる。
【０１６７】
図３５は、このようなＵＶ−ＮＯ処理に引き続きＲＦ−Ｎ_２処理を行う本実施例による基板処理工程の概要を示す。
【０１６８】
図３５を参照するに、ステップ５１においてシリコン基板表面が前記ＵＶ−ＮＯ処理により窒化され、酸窒化膜が形成される。
【０１６９】
さらにステップ５２において前記酸窒化膜がＲＦ−Ｎ_２処理され、先に形成された酸窒化膜がさらに窒化され、高い窒素濃度の酸窒化膜が得られる。
【０１７０】
以下の表３は、図３５のステップ５１および５２について処理条件の例を示す。ただし表３中、ステップ５１については、先に説明したＵＶ−Ｏ_２処理（図２５のステップ１）の条件も、合わせて示す。
【０１７１】
【表３】

さらに以下の表４は、前記ステップＳ５１およびＳ５２の許容プロセス条件を示す。表３と同様に、表４においても、ステップＳ５１においては前記ＵＶ−Ｏ_２処理とＵＶ−ＮＯ処理の双方について許容プロセス条件を示している。
【０１７２】
【表４】

表３および表４より、前記ＵＶ−Ｏ_２処理は０．０２〜５Ｔｏｒｒ（０．０２６６〜６６５Ｐａ）の圧力範囲で３００〜７５０℃の温度範囲において、また前記ＵＶ−ＮＯ処理は０．０１〜５Ｔｏｒｒ（０．０１３３〜６６５Ｐａ）の圧力範囲で３００〜７５０℃の温度範囲において行うことができる。
【０１７３】
一方、前記ＲＦ窒化処理は、１０^−３〜１０Ｔｏｒｒ（０．１３３Ｐａ〜１．３３ｋＰａ）の圧力範囲で、３００〜７００℃の温度範囲において行うことができる。特に０．６７Ｐａ〜１３．３ｋＰａの範囲が好ましい。
【０１７４】
ここで再び先に説明した図２４を参照するに、図中▲および▼は、図３５のプロセスにより形成した酸窒化膜中の窒素濃度の膜厚との関係を示す。
【０１７５】
図２４を参照するに、酸窒化膜は前記ＵＶ−ＮＯ処理により形成された直後においても１０％程度の窒素を含んでおり、従ってこれに対して図３５のステップＳ５２のＲＦ−Ｎ_２処理工程を行うことにより、より高い窒素濃度の酸窒化膜を形成することができる。その際、図中▲で示したデータはＵＶ−ＮＯ処理による成膜直後の膜厚が０．５ｎｍの場合を、また▼で示したデータをＵＶ−ＮＯ処理による成膜直後の膜厚が０．４ｎｍの場合を示しているが、特に▼で示した膜の場合には、ＲＦ−Ｎ_２処理を行うことにより、ＸＰＳ法で測定した膜厚が０．６ｎｍ以下であっても２０％の窒素濃度を実現できることがわかる。
【０１７６】
図３６は、先の実施例においてＵＶ−Ｏ_２処理に引き続きＲＦ−Ｎ_２処理を行って得られた酸窒化膜に対して、膜中の窒素原子の１ｓ状態での束縛エネルギをＸＰＳ法により求めた結果を、先に説明したＵＶ−ＮＯ処理を行って形成した酸窒化膜に対する結果、およびその他の方法により形成された酸窒化膜に対する結果と共に示す。ただし図３６中、縦軸はＸＰＳスペクトルの半値幅（ＦＷＨＭ）を、横軸はＮ_１ｓ原子の束縛エネルギを示す。
【０１７７】
図３６を参照するに、特に高い束縛エネルギを有する酸窒化膜は、図３７（Ａ）に示すような窒素原子の最隣接位置をＳｉ原子が占有し、また窒素原子の第２隣接位置を酸素が占有する場合に対応し、一方、低い束縛エネルギを有する酸窒化膜は、図３７（Ｂ）に示すような、窒素原子の最隣接位置をＳｉ原子が占有し、第２隣接位置もＳｉ原子が占有する場合に対応すると考えられる。なお、両者の束縛エネルギの差は０．６ｅＶ程度であり、図３６の横軸の分布と一致する。
【０１７８】
図３７（Ａ）を参照するに、この状態では窒素原子は酸化膜内に含まれており、例えば図１に示すように、酸化膜の内部あるいは表面近傍に窒素原子が存在している状態に対応する。これに対し図３７（Ｂ）において点線で囲んだ一または複数の席のＳｉが図中に矢印で示すように酸素により置換された状態が、酸窒化膜中においてシリコン基板と酸窒化膜との界面近傍に窒素原子が濃集した状態に対応する。
【０１７９】
図３６を見ると、ＵＶ−Ｏ_２酸化膜をＲＦ−Ｎ_２処理した酸窒化膜では、束縛エネルギは比較的低エネルギ側にある約３９７．６ｅＶから高エネルギ側である約３９８．１ｅＶまで広範囲に分散しており、またピーク半値幅の値も大きいことから、膜中において図３７（Ａ）の状態と図３７（Ｂ）の状態とが混合していることが推定される。
【０１８０】
一方、ＵＶ−ＮＯ処理のみを行った酸窒化膜では、束縛エネルギは約３９７．５ｅＶから約３９７．９ｅＶの低エネルギ側に分散しており、またピーク半値幅の値もより小さくなっていることから、膜中において図３７（Ａ）の状態と図３７（Ｂ）の状態とが混合していることは同じであるが、図３７（Ｂ）の状態が多少優勢になっていると推定される。すなわち、この場合には酸窒化膜中における窒素原子の分布は、よりシリコン基板に近い側にシフトしていると考えられる。
【０１８１】
図３６中には、さらに熱酸化膜をＲＦ−Ｎ_２処理して形成した酸窒化膜（ＲＴＯ／ＲＦＮ）、熱酸化膜をマイクロ波プラズマ窒化処理して形成した酸窒化膜（ＳＰＡ）およびシリコン基板を熱酸窒化処理して形成した酸窒化膜（ＲＴＮＯ）についての結果が示されている。
【０１８２】
酸窒化膜ＲＴＯ／ＲＦＮおよびＳＰＡについては、観測されるＮ１ｓ状態の束縛エネルギが比較的大きく、図３７（Ａ）の状態が優勢になっていると考えられる。これに対し、酸窒化膜ＲＴＮＯにおいては観測されるＮ１ｓ状態の束縛エネルギは３９７．４ｅＶ近傍に集中しており、これは酸窒化膜中の窒素原子がシリコン基板との界面近傍に濃集していることを示していると考えられる。
【０１８３】
このように、本発明によるＵＶ−Ｏ_２酸化膜をＲＦ−Ｎ_２処理する酸窒化膜の形成方法によれば、酸窒化膜中に、膜表面の側により濃集した、しかし比較的一様な窒素原子の分布を実現することが可能である。一方、既存の酸化膜をＲＦ窒化処理した場合、図３６中のＵＶＯ_２／ＲＦＮあるいはＲＴＯ／ＲＦＮ、あるいはＳＰＡの結果からもわかるように窒素原子は主に膜の表面付近に分布すると考えられる。このことから、図３６に示すＵＶ−ＮＯ処理を行って形成した酸窒化膜をさらにＲＦ窒化処理した場合には、窒素原子を酸窒化膜のシリコン基板との界面から表面までの間に、ほぼ一様に分布させることが可能になると考えられる。
［第５実施例］
ところで、図１の高誘電体ゲート絶縁膜を有する半導体装置を製造する場合には、このような基板処理装置２０で形成されたベース酸化膜２上に高誘電体膜３を形成する必要がある。
【０１８４】
高誘電体膜３は典型的にはＣＶＤ法により形成され、例えばＺｒＯ_２膜を形成する場合にはＺｒＣｌ_４やその他のＺｒを含む気相原料を使い、これを酸化することによりＺｒＯ_２膜を堆積させる。
【０１８５】
このような高誘電体膜３の形成は、図１６（Ａ），（Ｂ）のラジカル酸化膜の窒化工程に引き続いて、被処理基板を外気に触れさせることなく行うことが好ましく、このため図３の基板処理装置２０はＣＶＤ室を含んだクラスタ型の基板処理装置中に組み込むのが望ましい。
【０１８６】
図３８は、本発明の第５実施例によるこのようなクラスタ型基板処理装置３０の概略的な構成を示す。
【０１８７】
図３８を参照するに、クラスタ型基板処理装置３０は、被処理基板Ｗを出し入れするカセットモジュール３１Ａ，３１Ｂと、前記カセットモジュール３１Ａ，３１Ｂにそれぞれのゲートバルブを介して結合された基板搬送室３２とを含み、前記基板搬送室３２には、さらに基板洗浄室３３，ベース膜形成室３４，ＣＶＤ室３５および熱処理室３６が結合される。
【０１８８】
そこでカセットモジュール３１Ａあるいは３１Ｂから基板搬送室３２に導入された被処理基板Ｗはまず基板洗浄室３３に送られ、自然酸化膜および有機物汚染を除去される。次いで被処理基板Ｗは基板搬送室３２を介してベース酸化膜形成室３４に送られ、前記ベース酸化膜１２および窒化膜１２Ａが形成される。
【０１８９】
その後、被処理基板Ｗは基板搬送室３２を通ってＣＶＤ室３５に送られて高誘電体膜１３が形成され、さらに熱処理室３６に送られて結晶化および酸素欠損補償がなされる。熱処理室３６における処理の後、被処理基板Ｗは基板搬送室３２を通ってカセットモジュール３１Ａあるいは３１Ｂに送られる。
【０１９０】
ところで、各々の処理室３３〜３６には協働する様々な装置類が設けられており、その結果、処理室はそれ自体の他に、図３８中に破線で示す面積を必要とする。その際、処理室のうち、基板搬送室３２に面する側の部分は、他の処理室との間隔が狭く、利用可能なスペースが限られていることがわかる。
【０１９１】
そこで、このようなクラスタ型の基板処理装置３０において図３の基板処理装置２０を使おうとすると、処理容器２１が基板搬送ユニット２７の代わりに基板搬送室３２に結合されることになるが、その場合、図４（Ｂ）あるいは図１６（Ｂ）に示されている、処理容器２１の基板搬送室３２に近い側において側方に突出するターボ分子ポンプ２３Ｂが隣接する処理室と干渉してしまう問題が生じる。
【０１９２】
ターボ分子ポンプ２３Ｂは処理容器２１の減圧を速やかに行うために排気口２１Ａの近傍に設ける必要があるが、基板搬送室３２の下には搬送ロボットなど、様々な装置が設けられており、これに利用できるスペースは存在しない。また、処理容器２１の下には基板回転機構２２Ｃをはじめとする様々な装置が設けられており、やはりターボ分子ポンプ２３Ｂを設けるスペースは得られない。
【０１９３】
図３９（Ａ），（Ｂ）は、本発明の第５実施例による基板処理装置４０の構成を示す、それぞれ側面図および平面図である。ただし図３９（Ａ），（Ｂ）中、先に説明した部分には同一の参照符号を付し、説明を省略する。
【０１９４】
図３９（Ａ），（Ｂ）を参照するに、基板処理装置４０はターボ分子ポンプ２３Ｂを、図３８のようなクラスタ型基板処理装置を構成した場合にスペースの余裕が得られる処理容器２１の外側、すなわち前記基板搬送ユニット２７と反対の側に配置する。これに伴い、前記処理容器２１には前記ターボ分子ポンプ２３Ｂに協働する排気口２１Ｅが、前記基板搬送室と反対の側に形成される。さらに酸素ラジカルが前記被処理基板Ｗの表面を通って前記排気口２１Ｅに流れるように、酸素を導入する処理ガスノズル２１Ｄおよび紫外光源２５が、被処理基板Ｗよりも前記基板搬送室２７に近い側に設けられる。
【０１９５】
前記ターボ分子ポンプ２３Ｂは前記処理容器２１の下部に垂直な向きで、すなわち吸気口と排気口とが上下に配列するような向きで、バルブ２３Ａを介して結合されており、前記ターボ分子ポンプ２３Ｂの排気口は、前記処理容器２１の排気口２１Ａからバルブ２４Ａを経て前記ポンプ２４に至る排気ラインに、バルブ２４Ａの後ろで結合されている。
【０１９６】
基板処理装置４０はターボ分子ポンプ２３Ｂが外側、すなわち基板搬送ユニット２７と反対の側に形成配置されるため、図３８のようなクラスタ型の基板処理装置を構成しても、ターボ分子ポンプ２３Ｂが隣接する処理室と干渉する問題は生じない。
【０１９７】
図４０（Ａ），（Ｂ）は、前記基板処理装置４０を使ってベース酸化膜１２を形成する工程を示す。
【０１９８】
図４０（Ａ），（Ｂ）を参照するに、ベース酸化膜形成工程ではバルブ２３Ａおよび２３Ｃが開放され、バルブ２４Ａが閉鎖される。その結果、前記プロセス空間２３Ｂは前記排気口２１Ｅにおいてターボ分子ポンプ２３Ｂにより１．３３×１０^−１〜１．３３×１０^−４Ｐａ（１０^−３〜１０^−６Ｔｏｒｒ）の高真空状態に減圧され、この状態で前記処理ガスノズル２１Ｄから酸素ガスがプロセス空間２１Ｂに導入される。さらに前記被処理基板Ｗを基板回転機構２２Ｃにより回転させながら紫外光源２５を適当なエネルギで駆動することにより、形成された酸素ラジカルが基板表面に沿って排気口２１Ｅへと流れ、基板表面を一様に酸化する。これにより、１ｎｍ以下、特に２〜３原子層の膜厚に対応する約０．４ｎｍの膜厚を有する非常に薄いシリコン酸化膜を、シリコン基板表面に一様に再現性良く安定に形成することが可能になる。もちろん、厚さが１ｎｍを超えるシリコン酸化膜を形成することも可能である。
【０１９９】
図４１（Ａ），（Ｂ）は、本実施例の基板処理装置４０を使い、図４０（Ａ），（Ｂ）の工程の後、形成されたベース酸化膜２の表面を窒化し、酸窒化膜２Ａを形成する工程を示す。
【０２００】
図４１（Ａ），（Ｂ）を参照するに、窒化工程では前記バルブ２３Ａおよび２３Ｃが閉鎖され、バルブ２４Ａが開放される。これによりターボ分子ポンプ２３Ｂは排気系から遮断され、前記プロセス空間２１Ｂは前記ポンプ２４により、直接に排気され、１．３３Ｐａ〜１．３３ｋＰａ（０．０１〜１０Ｔｏｒｒ）の圧力に減圧される。
【０２０１】
この状態で前記リモートプラズマ源２６にＡｒガスと窒素ガスとを供給し、さらにこれを高周波励起することにより、窒素ラジカルが形成される。形成された窒素ラジカルは、前記被処理基板Ｗの表面に沿って排気口２１Ａへと流れ、その際に回転している被処理基板Ｗの表面を一様に窒化する。このような窒化により、図１に示すベース酸化膜２の表面は酸窒化膜２Ａに変換される。
【０２０２】
本実施例の基板処理装置４０を、図３８に示すクラスタ型基板処理装置において処理室３４に使うことにより、このようにして形成された酸窒化膜２Ａを含むベース酸化膜２上に、引き続いてＺｒＯ_２，ＨｆＯ_２，Ｔａ_２Ｏ_５，ＺｒＳｉＯ_４，ＨｆＳｉＯ_４，Ａｌ_２Ｏ_３などの高誘電体膜１３を形成することが可能になる。
【０２０３】
なお以上の説明では、基板処理装置４０を使って非常に薄いベース酸化膜を形成する例を説明したが、本発明はかかる特定の実施例に限定されるものではなく、シリコン基板あるいはシリコン層上に高品質の酸化膜、窒化膜あるいは酸窒化膜を、所望の膜厚に形成するのに適用することが可能である。
［第６実施例］
以上の実施例では、図３の基板処理装置２０を使って図１に示す半導体装置１００におけるベース酸化膜２を０．４ｎｍ前後の膜厚に形成し、しかもその表面に酸窒化膜２Ａを形成する技術を説明したが、前記基板処理装置２０により厚い酸窒化膜を形成し、これにより図４２に示す半導体装置２００のように、ゲート絶縁膜３Ａを形成することも可能である。
【０２０４】
図４２を参照するに、半導体装置２００では図１の高誘電体膜ゲート絶縁膜３は使われず、ゲート絶縁膜３Ａ上に直接にゲート電極４が形成される。図４２中、先に説明した部分には同一の参照符号を付し、説明を省略する。
【０２０５】
図４２の半導体装置２００では高誘電体膜３を使う必要がなく、従来の半導体プロセス技術で扱われている酸窒化膜によりゲート絶縁膜が形成できるため、半導体装置の製造が容易になる。一方、図４２の半導体装置２００では、先に図３で説明した基板処理装置２０を使って酸窒化膜よりなる前記ゲート絶縁膜３Ａを、酸化膜換算膜厚にして１．０ｎｍ程度もしくはそれ以上の膜厚、すなわち１．６ｎｍ程度の物理膜厚に形成する必要がある。
【０２０６】
図４３は、本実施例による厚い酸窒化膜の形成工程を示す図である。
【０２０７】
図４３を参照するに、ステップ６１において紫外光励起酸素ラジカルによるシリコン基板表面のＵＶ−Ｏ_２処理を行った後、形成された酸化膜がステップ６２においてＲＦ−Ｎ_２処理により窒化処理され、酸窒化膜が形成されるが、本実施例においてはステップ６１および６２の工程を７５０℃の比較的高い温度で実行し、所望の膜厚を実現している。なおステップ６１とステップ６２の間のパージ工程は、先の図３２の実験の結果に鑑み、省略している。
【０２０８】
図４４は、図４３のステップ６１におけるＵＶ−Ｏ_２処理工程で得られたシリコン酸化膜の、シリコン基板表面における膜厚分布を示す。ただし図４４の膜厚は、分光エリプソメトリにより測定している。
【０２０９】
図４４を参照するに、シリコン酸化膜は４００Ｐａ（３Ｔｏｒｒ）の圧力下、７５０℃の基板温度において基板を回転させながら形成されており、膜厚の分散値σが０．７２％の、非常に均一な酸化膜が形成されているのがわかる。
【０２１０】
図４５（Ａ）〜（Ｃ）は、図４４の酸化膜を図４３のステップ６２におけるリモートプラズマ窒化処理工程の処理条件と、得られた酸窒化膜の膜厚分布を示す。
【０２１１】
図４５（Ａ）を参照するに、プラズマ窒化処理は２６．６ｋＰａ（２００ｍＴｏｒｒ）の圧力下、７５０℃の基板温度で、窒素ガス流量とＡｒガス流量とを図示の範囲で変化させることで実行された。図４５（Ａ）中、ラインＡはプラズマが着火する窒素ガス流量の上限を、またラインＢおよびＣは、図３の基板処理装置２０の圧力制御可能範囲を示す。
【０２１２】
図４５（Ｂ）の中央に示すように、Ａｒガス流量と窒素ガス流量をラインＤ上に乗るように選択した場合、膜中の窒素濃度分布、すなわち酸窒化膜の膜厚分布は一様で、膜厚の分散値σとして非常に小さい、０．７％程度の値を達成できることがわかる。
【０２１３】
これに対し、Ａｒガス流量と窒素ガス流量とを前記ラインＤから外れた位置に設定した場合、図４５（Ｂ）の左側に示すように基板の周辺部において窒素濃度が増大する、あるいは図４５（Ｂ）の右側に示すように基板の中央部において窒素濃度が増大する分布が生じ、膜厚分布の分散値σが増大するのがわかる。
【０２１４】
すなわち、図４５（Ａ）のラインＤの右側と左側で酸窒化膜中の窒素濃度分布、従って膜厚分布がそれぞれ凸と凹になるのに対し、窒素ガス流量とＡｒガス流量とを前記ラインＤ上に乗るように選択した場合、平坦な酸窒化膜の膜厚分布が得られる。
【０２１５】
図７４は、基板温度７５０℃における前記ＲＦ−Ｎ_２処理の均一性とプロセス圧との関係を示す。ただし図７４中、横軸はＲＦ−Ｎ_２処理の際のプロセス圧を、縦軸が、窒化処理した酸窒化膜の基板中心部での膜厚を、基板周辺部での膜厚で割り算した値を示す。従って、図７４中の縦軸が１の場合に優れた面内均一性が達成されている。また図７４中の縦軸が１より大の場合には得られた酸窒化膜は凸の膜厚分布を、１より小の場合には凹の膜厚分布を有している。
【０２１６】
図７４中、▲はＡｒガス流量を８００ＳＣＣＭに、また窒素ガス流量を１１５０ＳＣＣＭに設定した場合を、■はＡｒガス流量を１１５０ＳＣＣＭに、また窒素ガス流量を１１５０ＳＣＣＭに設定した場合を、◆はＡｒガス流量を１６００ＳＣＣＭに、また窒素ガス流量を１４００ＳＣＣＭに設定した場合を示す。従って、Ａｒガス流量と窒素ガス流量とを合計したプロセスガスの総流量は▲，■，◆の順で増大する。
【０２１７】
図７４を参照するに、総流量を固定した条件下で圧力を変化させると、低圧側で膜厚分布が凹から凸に変化し、さらに凹に戻ることがわかる。また、いずれの総流量においても、均一な膜厚の酸窒化膜が得られるプロセス圧が２箇所存在することがわかる。また総流量が増大するにつれて、図７４の曲線は高圧力側に移動するのがわかる。このように、本発明のＲＦ−Ｎ_２処理において処理の均一性を実現するには、Ａｒガスと窒素ガスの総流量を調節する方法の他に、プロセス圧を調整する方法も可能である。
【０２１８】
先の図４５（Ａ）におけるラインＤは図７４における▲の点に対応するが、図７４の関係から存在が推測されるもう一つの最適点は圧力が低すぎるため、実際には存在しない。この最適点を使う場合には、大きな排気負荷に対応した能力の大きいポンプを使う必要がある。
【０２１９】
図４５（Ｃ）は、図４５（Ａ）の前記ラインＤ上にＡｒガス流量および窒素ガス流量を制御した場合の、様々なＡｒガス流量と得られる酸窒化膜の膜厚との関係を示す。図４５（Ｃ）においても、分光エリプソメトリにより測定した膜厚を示している。
【０２２０】
図４５（Ｃ）を参照するに、Ａｒガス流量、従って窒素ガス流量が増大するにつれて酸窒化膜の膜厚が増大しており、これは図４５（Ａ）あるいは図４５（Ｂ）に示した酸窒化膜の膜厚が、膜中の窒素濃度を反映したものであることを示している。
【０２２１】
図４６（Ａ）〜（Ｄ）は、温度７５０℃，圧力２００ｍＴｏｒｒの条件下で行った、図４４の酸化膜のＲＦ−Ｎ_２処理における窒化過程のカイネティックスを示す。ただし図４６（Ａ）はＸＰＳ法で求めた酸窒化膜の膜厚と窒化処理時間の関係を、図４６（Ｂ）は酸窒化膜中に取り込まれる窒素原子の濃度と窒化処理時間の関係を、図４６（Ｃ）はＸＰＳ法で求めた酸窒化膜におけるＯ_１ｓ信号ピークの面積と窒化処理時間の関係を、さらに図４６（Ｄ）はＸＰＳ法で求めた酸窒化膜由来のＳｉ_２ｐ信号のピーク面積と窒化処理時間の関係を、初期酸化膜の膜厚を単色光エリプソメータで測定した値で１．０ｎｍに設定した場合、１．２ｎｍに設定した場合、および１．３ｎｍに設定した場合について示す。ただしＸＰＳによる測定値ではそれぞれ０．８ｎｍ，１．０ｎｍ，１．３ｎｍ程度の値になっている。
【０２２２】
図４６（Ａ）〜（Ｄ）を参照するに、酸窒化膜の膜厚や窒素濃度は、初期膜厚が上記のいずれであっても窒化時間と共に増大する傾向を示すが、Ｏ_１ｓ信号およびＳｉ_２ｐ信号の窒化処理時間に対する変化は、酸化膜の初期膜厚により異なっているのがわかる。
【０２２３】
より具体的には、初期膜厚が１．３ｎｍの酸化膜のＲＦ−Ｎ_２処理では、Ｏ_１ｓ信号が窒化処理時間と共に減少しており、窒化の過程で酸素が脱離していることを示している。一方、初期膜厚が１．０ｎｍの酸化膜のＲＦ−Ｎ_２処理では、観測されるＯ_１ｓ信号の強度が余り変化してない。これは、窒素原子の導入により離脱した酸素原子が、膜厚が１．０ｎｍ程度の薄い酸化膜では膜内を拡散し、シリコン基板との界面に析出し、かかる界面において酸化膜の再成長を生じていることを示唆している。
【０２２４】
また初期膜厚が１．３ｎｍの酸化膜のＲＦ−Ｎ_２処理では、酸化膜の初期膜厚が大きいため、脱離した酸素原子がシリコン基板と酸化膜との界面に到達できず、酸窒化膜の外に逃げているものと考えられる。
【０２２５】
図４６（Ｄ）のＳｉ_２ｐ信号について見ると、Ｓｉ_２ｐ信号は初期膜厚が１．３ｎｍの酸化膜では窒化処理開始後３０秒まで余り変化しないのがわかる。これは、酸化膜中に導入された窒素原子が膜内で酸素原子と置換しており、酸化膜とシリコン基板との界面までは到達していないことを示していると考えられる。一方、初期膜厚が１．０ｎｍの酸化膜では窒化処理の開始と共にＳｉ_２ｐ信号が増加しており、先に述べたシリコン基板と酸化膜との界面における酸素の析出、およびこれに伴う酸化膜の再成長が生じていると考えられる。
【０２２６】
図４７（Ａ）〜（Ｄ）は図４３のプロセスにおいて、均一性を犠牲にしてより窒化反応が促進される条件で酸化膜のＲＦ−Ｎ_２処理を行った場合の結果を示す。より具体的には、図４７（Ａ）〜（Ｄ）の実験では処理圧を４００ｍＴｏｒｒに設定した。窒化反応の促進と均一性を両立させるためには、より大きな排気負荷のとれる大きなポンプをポンプ２４として使用し、またより出力大きいラジカル源をリモートラジカル源２６として使用する必要がある。これは、先に説明したプロセス圧を制御する場合と本質的に同じことである。
【０２２７】
図４７（Ａ）〜（Ｄ）を参照するに、このように処理圧を増大させ窒化処理を促進するように設定された条件下では、初期膜厚が１．０ｎｍの薄い酸化膜であってもＲＦ−Ｎ_２処理の開始と共に図４７（Ｃ）よりわかるようにＯ_１ｓ信号の強度が減少しており、また図４７（Ｄ）よりわかるように、初期膜厚が１．３ｎｍの酸化膜でもＳｉ_２ｐ信号の強度が窒化処理の最初から単調に増加しているのがわかる。これは図４７（Ａ）〜（Ｄ）の実験では窒化処理が促進されるため、短時間で図４４（Ａ）〜（Ｄ）の場合の窒化濃度に相当する量の窒素を導入され、窒素原子が酸化膜とシリコン基板との界面に到達していることを示している。このように窒化処理が促進される条件で窒化処理を行うと、窒化処理時間を短縮できる反面、窒化時間を最適に制御しないと導入された窒素原子が界面に届いてしまう可能性がある。
【０２２８】
図４８（Ａ）は、図４６（Ａ）〜（Ｄ）および図４７（Ａ）〜（Ｄ）の結果より推測される、酸化膜のＲＦ−Ｎ_２プロセスによる窒化工程のメカニズムを概略的に示した図である。ただし図４８（Ａ）中、図４２に対応した部分には同一の参照符号を付し、説明を省略する。
【０２２９】
図４８（Ａ）を参照するに、ＲＦ−Ｎ_２処理の条件が適当であれば、導入される窒素原子は酸化膜の表面近傍に濃集し、窒素原子がシリコン基板１と酸窒化膜３Ａとの界面近傍に侵入して界面準位を形成する問題が抑制できる。Ｗａｔａｎａｂｅ，　Ｋ．，　ｅｔ　ａｌ．，　Ｊ．　Ａｐｐｌ．　Ｐｈｙｓ．　９０　ｐｐ．４７０１　（２００１）　を参照。
【０２３０】
一方、かかるＲＦ−Ｎ_２処理の条件が不適当で窒化反応が進行しすぎると、図４８（Ｂ）に示すように窒素原子がシリコン基板１と酸窒化膜３Ａとの界面にまで到達してしまい、界面準位が発生する恐れがある。このため、図４３のステップ６２の工程は、３０秒以内に終了させることが望ましい。
【０２３１】
そこで、本実施例では図３の基板処理装置２０において、被処理基板Ｗの毎分当たりの回転数を２０回に設定し、基板Ｗが３０秒間のＲＦ−Ｎ_２処理の間に１０回転させている。
【０２３２】
図４９（Ａ），（Ｂ）は、このようにして初期膜厚が１．０ｎｍのＵＶ−Ｏ_２酸化膜を回転させながら３０秒間窒化処理した場合の、基板の中心部（Ｃ），中間部（Ｍ）および周辺部（Ｅ）におけるＳｉ，ＮおよびＯ原子の深さ方向への濃度プロファイルをＳＩＭＳ分析により求めた結果を示す。ただし図４９（Ｂ）は図４９（Ａ）の酸窒化膜表面近傍を拡大して示す図である。
【０２３３】
図４９（Ａ），（Ｂ）を参照するに、窒素濃度のピークは酸窒化膜１３Ａの表面から０．５ｎｍ程度の深さに位置しており、また優れた面内均一性が達成されていることがわかる。シリコン基板１と酸窒化膜３Ａとの界面近傍における窒素原子の濃集は認められない。
【０２３４】
図５０（Ａ），（Ｂ）は、初期膜厚が１．３ｎｍのＵＶ−Ｏ_２酸化膜を同様にしてＲＦ−Ｎ_２処理により窒化した場合の、膜中におけるＳｉ，ＮおよびＯ原子の深さ方向への濃度プロファイルを示す。
【０２３５】
この場合にも、図４９（Ａ），（Ｂ）と同様な結果が得られているのがわかる。
［第７実施例］
図５１は、本発明の第７実施例による基板処理装置３２０の構成を示す。
【０２３６】
図５１を参照するに、基板処理装置３２０は被処理基板３２２を保持する保持台３２１Ａを有する処理容器３２１を含み、前記処理容器３２１中には前記保持台３２１Ａ上の被処理基板３２２に対向して石英等の紫外光を透過させる材料よりなるシャワーヘッド３２１Ｂが設けられる。前記処理容器３２１は排気口３２１Ｃを介して排気され、一方前記シャワーヘッド３２１Ｂに外部のガス源から酸素などの酸化性ガスが供給される。
【０２３７】
前記処理容器３２１にはさらに前記シャワーヘッド３２１Ｂの上方に前記シャワーヘッド３２１Ｂおよびその下の被処理基板３２２を露出するように、石英などの紫外線を透過する材料よりなる光学窓３２１Ｄが形成されている。前記保持台３２１Ａ中には前記被処理基板３２２を加熱するヒータ３２１ａが設けられている。
【０２３８】
さらに前記処理容器３２１上には、前記光学窓３２１Ｄに対応して設けられた結合部３２３を介して紫外光露光装置３２４が設けられている。
【０２３９】
前記紫外光露光装置３２４は、前記光学窓３２１Ｄに対応した石英光学窓３２４Ａと、前記石英光学窓３２４Ａおよび光学窓３２１Ｄを介して紫外光を前記被処理基板３２２上に照射する紫外光源３２４Ｂとを含み、前記紫外光源３２４Ｂはロボット３２４Ｃにより図５１中に矢印で示すように、前記光学窓３２４Ａに平行な方向に移動が可能に保持されている。図示の例では、前記紫外光源３２４Ｂは、前記移動方向に対して略直角に延在するように設けられた線状の光源よりなる。かかる線状の光源としては、例えば波長が１７２ｎｍのエキシマランプを使うことができる。
【０２４０】
また図５１の構成では、前記紫外光源３２４Ｂにより形成された紫外線が前記光学窓３２１Ｄを介して前記処理容器３２１中に導入されるに先立って空気中の酸素により吸収されてしまうのを回避するため、前記結合部３２３には外部のガス源（図示せず）よりＮ_２などの不活性ガスがライン３２３Ａを介して供給され、前記不活性ガスは前記紫外光露光装置３２４の光学窓３２４Ａの取り付け部に形成された隙間を通って前記紫外光露光装置３２４中の空間３２４Ｄに流入する。
【０２４１】
さらに前記紫外光源の駆動に伴い、前記紫外光源３２４Ｂの直下に大気中の酸素が巻き込まれ流入するのを抑制するため、紫外光源３２４Ｂの両側面に遮蔽板３２４Ｆを設け、さらに前記遮蔽板３２４Ｆの下において、前記紫外光源３２４Ｂに対向する光学窓３２４Ａと遮蔽板３２４Ｆとの間に形成される高さがせいぜい１ｍｍ程度の狭い領域に、ライン３２４ｂを介してＮ_２などの不活性ガスが供給される。この領域には、前記ライン３２３Ａからの不活性ガスも供給され、その結果、この領域において紫外光を吸収する酸素が効果的に排除される。
【０２４２】
前記遮蔽板３２４Ｆ下の領域を通過した不活性ガスは前記空間３２４Ｄに流れ出し、さらに前記紫外光露光装置３２４中に形成された排気口３２４Ｅを通って外部に排出される。
【０２４３】
図５１の基板処理装置では、前記紫外光露光装置３２４において前記ロボット３２４Ｃにより前記紫外光源３２４Ｂの移動・走査を制御することができ、その結果、前記被処理基板３２２の表面にＵＶ−Ｏ_２処理により酸化膜を形成する際に、紫外線露光照射量を制御することにより膜厚の分布を制御することが可能になる。前記ロボット３２４Ｃはコンピュータなどの制御装置３２５により制御される。また、前記制御装置３２５は前記紫外光源３２４Ｂの駆動をも制御する。
【０２４４】
図５２（Ａ）〜（Ｃ）は図５１の基板処理装置３２０を使い、様々な条件下で酸化膜をシリコン基板上に形成した場合の、得られた酸化膜のエリプソメトリにより求めた膜厚分布をÅ単位で示す。ただし図５２（Ａ）〜（Ｃ）において、被処理基板３２２としては８インチのシリコン基板が、表面自然酸化膜を後で説明する表面前処理工程により除去した状態で使われている。また図５２（Ａ）〜（Ｃ）の各々において、前記処理容器３３１中の内圧は約０．７ｋＰａ（５Ｔｏｒｒ）に設定され、基板温度は３００°Ｃに設定されている。
【０２４５】
図示の結果は、前記処理容器３２１中に酸素ガスを１ＳＬＭの流量で５分間供給した場合のもので、図５２（Ａ）は紫外光の照射を行わなかった場合を、また図５２（Ｂ），（Ｃ）は前記紫外光源３２４Ｂにより、光源直下で３０ｍＷ／ｃｍ^２の照度の紫外光を照射した場合を示す。図５２（Ｂ）は、前記紫外光源３２４Ｂを４１０ｍｍの範囲で、すなわち前記被処理基板３２２の全面が一様に露光されるように一様に走査した場合を示す。
【０２４６】
図５２（Ａ）を参照するに、紫外光照射を行わなかった場合はシリコン基板表面に形成される酸化膜の厚さは０．２〜０．３ｎｍ程度であり、実質的な膜形成は生じていないのに対し、図５２（Ｂ）の場合には前記シリコン基板表面に約０．８ｎｍの酸化膜が形成されているのがわかる。さらに図５２（Ｂ）の場合には、前記紫外光源２４Ｂを４００ｍｍの範囲で一様に走査したにもかかわらず、前記８インチシリコン基板３２２の中央部において形成された酸化膜の膜厚が減少しているのがわかる。その結果、前記シリコン基板上に形成された酸化膜の膜厚変動は分散値で２．７２％と比較的大きい値になっているが、これは使用した基板処理装置３２０に固有の特性を反映しているものと考えられる。
【０２４７】
これに対し図５２（Ｃ）は、前記シリコン基板３２２の中央部付近で１００ｍｍの限られた範囲で前記紫外光源３２４Ｂを走査した場合の酸化膜の膜厚分布を示す。
【０２４８】
図５２（Ｃ）を参照するに、このようにして形成された酸化膜の膜厚は０．９２〜０．９３ｎｍの範囲に収まり、膜厚変動は分散値で１．３５％まで減少しているのがわかる。
【０２４９】
図５３は、図５２（Ａ）〜（Ｃ）の実験において、前記処理容器３２１中に導入される酸素ガスの流量を様々に変化させた場合について、紫外線露光時間と形成される酸化膜の厚さとの関係を求めた結果を示す。
【０２５０】
図５３よりわかるように、形成される酸化膜の膜厚は酸素ガス流量にはほとんど依存せず、１分間を経過すると約１ｎｍの値で飽和することがわかる。一方、露光時間が１分間より短い場合には、膜厚は露光時間共に増大する。図５３は、図５１の基板処理装置３２０を使ったシリコン基板表面へのベース酸化膜となる薄い酸化膜の形成工程はごく短時間で十分であることを示している。
【０２５１】
図５４（Ａ）〜（Ｅ）は図５１の基板処理装置３２０中において前記処理容器内圧を約０．７ｋＰａ（５Ｔｏｒｒ）、基板温度を４５０°Ｃに設定し、酸素ガスを１ＳＬＭの流量で供給しながら前記紫外光源２４Ｂを１００ｍｍの範囲で走査した場合に得られる酸化膜の膜厚分布をÅ単位で示す。簡単のため、シリコン基板は矩形形状で示してある。
【０２５２】
このうち図５４（Ａ）は前記走査を、基板中心を基点に、±５０ｍｍの範囲で行った場合を示すが、図５４（Ａ）の例では基板中心からｙ軸方向上上方に向かって、またｘ軸方向上右方に向かって前記酸化膜の膜厚が増大する傾向が存在するのがわかる。この場合の酸化膜の膜厚変動は分散値で３．７３％となっている。
【０２５３】
これに対して図５４（Ｂ）は、前記走査の基点を基板中心からｙ軸方向上下方に向かって１２．５ｍｍずらした場合の酸化膜の膜厚分布を、同じくÅ単位で示す。図５４（Ｂ）よりわかるように、酸化膜の膜厚変動は分散値で３．０７％まで減少している。
【０２５４】
さらに図５４（Ｃ）は、前記走査の基点を基板中心からｙ軸方向下方に２５．０ｍｍずらした場合の酸化膜の膜厚分布をÅ単位で示す。図５４（Ｃ）よりわかるように、酸化膜の膜厚変動は図５４（Ｂ）の場合と同じで３．０７％となっている。
【０２５５】
これに対し、図５４（Ｄ）は、前記走査の基点を基板中心からｙ軸方向下方に３７．５ｍｍずらした場合の酸化膜の膜厚分布をÅ単位で示す。図５４（Ｄ）よりわかるように、この場合酸化膜の膜厚変動は２．７０％まで減少している。
【０２５６】
一方、図５４（Ｅ）に示すように前記走査の基点を基板中心からｙ軸方向下方に５０．０ｍｍずらした場合には、前記酸化膜の膜厚変動は５．０８％まで増大している。
【０２５７】
このことから、図５１の基板処理装置３２０においては、前記紫外線源３２４Ｂの走査の基点を基板に対して最適化することでも、被処理基板３２２上に形成される酸化膜の膜厚変動を最小化できることが結論される。
【０２５８】
次に図５５（Ａ）〜（Ｅ）は、図５１の基板処理装置３２０において前記紫外線源３２４Ｂの走査距離を１００ｍｍとし、走査の基点を被処理基板３２２の中心からｙ軸方向下方に３７．５ｍｍずらした位置に設定し、照度をそれぞれ３ｍＷ／ｃｍ^２、６ｍＷ／ｃｍ^２、１２ｍＷ／ｃｍ^２、１８ｍＷ／ｃｍ^２および２４ｍＷ／ｃｍ^２に設定して酸化膜を形成した場合の膜厚分布をÅ単位で示している。
【０２５９】
図５５（Ａ）〜（Ｅ）を参照するに、膜厚のばらつきは図５５（Ａ）の照射量を３ｍＷ／ｃｍ^２に設定した場合が最も小さく、照射量が増大するにつれて膜厚のばらつきも増大しているのがわかる。
【０２６０】
図５５（Ａ）〜（Ｅ）の結果は、図５１の基板処理装置３２０において、紫外線源３２４Ｂの照度を最適化することによっても、得られる酸化膜の膜厚のばらつきを最小化できることを示している。
【０２６１】
図５６（Ａ），（Ｂ）は比較対照例を示し、図５６（Ａ）は図５５（Ａ）〜（Ｅ）と同一条件下において、紫外光照射を行わずに酸化膜を形成した場合を、また図５６（Ｂ）は従来の急速熱酸化（ＲＴＯ）処理により酸化膜を形成した場合を示すが、このいずれの場合においても４％を超える膜厚変動が観測されることがわかる。
【０２６２】
図５７，５８は、上記の結果を踏まえた、図５１の基板処理装置３２０における基板処理方法の最適条件を探索するフローチャートである。このうち、図５７は最適走査領域の探索を行うフローチャートであり、図５８は最適照度の探索を行うフローチャートである。
【０２６３】
図５７を参照するに、最初にステップ７１において被処理基板上の任意の領域が指定され、次にステップ７２において前記基板処理装置３２０中に被処理基板３２２を導入し、前記紫外光源３２４Ｂを前記被処理基板３２２上の指定された領域において走査させ、酸化膜を形成する。さらに、前記ステップ７１およびステップ７２を繰り返すことにより、各繰り返し毎に、新たな被処理基板３２２上に前記領域をずらした状態で酸化膜を形成する。
【０２６４】
さらにステップ７３において各実験で得られた酸化膜の膜厚分布を評価し、ステップ７４において膜厚変動が最小となる最適走査領域を見出す。
【０２６５】
図５７の最適走査条件を探索の後、図５８に示す最適照射条件の探索が行われる。
【０２６６】
図５８を参照するに、最初にステップ８１において図５７の手順により探索された最適走査領域が指定され、次にステップ８２において紫外光源２２４Ｂの駆動エネルギが指定される。さらにステップ８３において前記基板処理装置３２０中に被処理基板３２２を導入し、前記紫外光源３２４Ｂを前記被処理基板３２２上の指定された最適領域において、ステップ３１２により指定された駆動エネルギで走査させ、酸化膜を形成する。さらに、前記ステップ３１２およびステップ３１３を繰り返すことにより、各繰り返し毎に、新たな被処理基板３２２上に前記駆動エネルギをずらした状態で酸化膜を形成する。
【０２６７】
さらにステップ３１４において各実験で得られた酸化膜の膜厚分布を評価し、膜厚変動が最小となる紫外光源３２４Ｂの最適駆動エネルギを見出す。さらにステップ３１５において、かかる最適駆動エネルギにおいて膜形成がなされるように、前記基板処理装置３２０の紫外光源３２４Ｂを制御するプログラムを決定する。
【０２６８】
このようにして決定されたプログラムに従って前記制御装置３２５は前記ロボット３２４Ｃおよび紫外光源３２４Ｂを動作させ、その結果、前記紫外光源３２４Ｂは最適な基板領域を最適な駆動エネルギで走査し、その結果、前記前記被処理基板３２４上に０．３〜１．５ｎｍ、好ましくは１ｎｍ以下、より好ましくは０．８ｎｍ以下、例えば０．４ｎｍの厚さの、非常に薄い、しかも膜厚の一様なラジカル酸化膜が、先の実施例と同様にして形成される。
【０２６９】
先に説明したのと同様に、このような図５１の基板処理装置３２０を使ったＵＶ−Ｏ_２処理によるシリコン基板表面上への酸化膜の形成の際においても、形成された酸化膜の膜厚が０．４ｎｍあるいは２〜３原子層の範囲において膜成長の停留減少が生じ、このため、この厚さのシリコン酸化膜は安定に、再現性良く形成することができる。そこで、このようにして形成された酸化膜を高誘電体膜と組み合わせることにより、ゲート絶縁膜の実効的な膜厚が薄く、非常に微細化された高速ＭＯＳトランジスタを実現することが可能になる。
【０２７０】
なお、本実施例では酸化膜はＵＶ−Ｏ_２処理により形成された酸化膜としたが、酸化膜はこのような酸化膜に限定されるものではなく、低いラジカル密度で精密に酸化を行える酸化方法で形成された酸化膜であれば、どのようなものであってもよい。
［第８実施例］
図５９は、本発明の第８実施例によるＭＯＳトランジスタ３４０の構成を示す。
【０２７１】
図５９を参照するに、シリコン基板３４１上には２〜３原子層分の厚さのシリコン酸化膜よりなるベース酸化膜３４２が形成されており、前記ベース酸化膜３４２上にはＺｒＯ_２，ＨｆＯ_２，Ｔａ_２Ｏ_５，Ａｌ_２Ｏ_３，ＺｒＳｉＯ_４，ＨｆＳｉＯ_４などの、いわゆる高誘電体膜３４３が形成されている。さらに前記高誘電体膜３４３上には、ポリシリコンあるいはその他の金属よりなるゲート電極３４４が形成されている。また、図示は省略するが、前記シリコン基板３４１中には、前記ゲート電極３４４の両側に拡散領域が形成されている。
【０２７２】
図６０は、図５９のＭＯＳトランジスタを製造するのに使われるクラスタ型の基板処理システム３５０の構成を示す。
【０２７３】
図６０を参照するに、前記基板処理システム３５０はクラスタ型の処理装置であり、基板搬入／搬出のためのロードロック室３５１と、基板表面の自然酸化膜および炭素汚染を除去する前処理室３５２と、図５１の基板処理装置３２０よりなるＵＶ−Ｏ_２処理室３５３と、基板上にＴａ_２Ｏ_５、Ａｌ_２Ｏ_３，ＺｒＯ_２、ＨｆＯ_２，ＺｒＳｉＯ_４，ＨｆＳｉＯ_４等の高誘電体膜を堆積堆積するＣＶＤ処理室３５４と、基板を冷却する冷却室３５５とを真空搬送室３５６で連結した構成を有し、前記真空搬送室３５６中には搬送アーム（図示せず）が設けられている。
【０２７４】
動作時には、前記ロードロック室３５１に導入された被処理基板は経路（１）に沿って前記前処理室３５２に導入され、自然酸化膜および炭素汚染が除去される。前記前処理室３５２で自然酸化膜を除去された被処理基板３５２は経路（２）に沿って前記ＵＶ−Ｏ_２処理室３５３に導入され、図５１の基板処理装置３２０により、図５９に示すベース酸化膜３４２が、２〜３原子層の一様な膜厚に形成される。
【０２７５】
さらに、前記ＵＶ−Ｏ_２処理室３５３においてベース酸化膜３４２を形成された被処理基板は経路（３）に沿ってＣＶＤ処理室３５４に導入され、前記ベース酸化膜上に図５９に示す高誘電体ゲート絶縁膜３４４が形成される。
【０２７６】
さらに前記被処理基板は前記ＣＶＤ処理室３５４から経路（４）に沿って冷却室３５５に移され、前記冷却室３５５で冷却された後、経路（５）に沿ってロードロック室３５１に戻され、外部に搬出される。
【０２７７】
なお、図６０の基板処理システム３５０において、さらにシリコン基板の平坦化処理を、Ａｒ雰囲気中、高温熱処理により行う前処理室を別に設けてもよい。
【０２７８】
図６１は、ＵＶ−Ｏ_２処理室５３において行われるラジカル酸化処理の条件を説明する図である。
【０２７９】
図６１を参照するに、横軸は図５１の処理容器３２１中に紫外光源３２４Ｂにより励起される酸素ラジカルのＴｏｒｒ単位で表した分圧を対数スケールで示し、一方縦軸は、プロセス開始後、図８に示す停留現象が生じるようになるまでのプロセス時間、および停留現象が消滅するまでのプロセス時間を、同じく対数スケールで示す。横軸の酸素ラジカル分圧は酸素ラジカル密度に対応しており、前記紫外光源３２４Ｂの駆動パワーないし紫外光照射強度と紫外光波長とにより決定される。
【０２８０】
以下に、紫外光照射強度とラジカル密度との関係を、１７２ｎｍの紫外光波長を使った場合の例について説明する。
【０２８１】
図５１の基板処理装置３２０、すなわち図６０の基板処理システム３５０の処理室３５３において、１００％駆動状態で窓面直下の紫外光照度が５０ｍＷ／ｃｍ^２となる紫外光源を前記紫外光源３２４Ｂとして使い、プロセス圧を０．０２Ｔｏｒｒ（２．６６Ｐａ）に維持したまま１５０ＳＣＣＭの流量の酸素ガスを処理容器３２１中に流した場合、紫外光源３２４Ｂは４．３４×１０^１６／ｃｍ^２・秒のフォトンフラックスを形成する。前記光源２３が幅２ｃｍ幅の管状ランプであり、このランプにより２０ｃｍ径のシリコンウェハを照射した場合を考えると、シリコンウェハ表面における平均的なフォトンフラックスの値は、前記フォトンフラックス値の約１／１０の、４．３４×１０^１５ｃｍ−^２となる。
【０２８２】
一方、波長が１７２ｎｍの紫外光に対する酸素分子の吸収断面積は６×１０^−１９ｃｍ^２であることが知られているので、式Ｉ／Ｉ_０＝ｅｘｐ（−σｎｘ）で与えられるプロセス雰囲気中における紫外光の透過率は、０．９９１６と求められる。ただし、ここでプロセス圧力は０．０２Ｔｏｒｒ（２．６６Ｐａ）とし、プロセス雰囲気中における気体分子密度ｎは７．０５×１０^１４ｃｍ^−３、紫外光は処理容器２３中を、２０ｃｍの距離を進むものとした。
【０２８３】
そこで、紫外光が処理容器３２１中において２０ｃｍの距離を進む間にプロセス雰囲気により吸収される量に対応するラジカル量は、単位面積単位時間あたり、前記フォトンフラックス値４．３４×１０^１５／ｃｍ^２に比率０．００８４を乗じて、３．６５×１０^１３／ｃｍ^２・秒となり、これと同じ割合で、酸素ラジカルが処理容器２３中に形成される。
【０２８４】
一方、処理容器３２１中における酸素ガスのフラックスは、シャワーヘッド２１Ｂの面積を３１４ｃｍ^２とすると、標準状態体積換算で７．９８×１０^−３ｃｃ／ｃｍ^２・秒となる。これは分子数に換算すると、２．１３８×１０^１７／ｃｍ^２・秒となる。そこで、フラックス比の値、３．６５×１０^１３／２．１３８×１０^１７＝１．７１×１０^−４から、０．０２Ｔｏｒｒ（２．６６Ｐａ）のプロセス圧の下で発生する酸素ラジカルの分圧は、３．４２×１０^−６Ｔｏｒｒ（＝１．７１×１０^−４×０．０２）となる。
【０２８５】
このように、光強度１００％、酸素ガス流量１５０ＳＣＣＭ，プロセス圧（＝処理容器内圧）０．０２Ｔｏｒｒ（２．６６Ｐａ）の場合に前記処理容器３２１中に形成される酸素ラジカル濃度は、約３．４２×１０^−６Ｔｏｒｒ（４．５４×１０^−４Ｐａ）となることがわかる。同様な手続により、他の様々な条件について、ラジカル密度を計算することが可能である。
【０２８６】
図６１はラジカル密度、すなわちラジカル分圧と、基板処理開始後、先に説明した図５の停留現象が生じる期間との関係を示す。
【０２８７】
図６１を参照するに、処理容器３２１中のラジカル密度が高い場合、図５の場合と同様に停留現象はプロセス開始後すぐに発生するのに対し、ラジカル密度が低い場合には、プロセス開始後、長い時間が経過した後で生じる。これは、ラジカル密度が高い場合、酸化膜の成膜速度が大きく、短時間で０．４ｎｍの停留膜厚に達するのに対し、ラジカル密度が低い場合、酸化膜の成膜速度が小さく、０．４ｎｍの停留膜厚に達するのに長い時間を要する事情に対応している。
【０２８８】
同様に、停留現象が発生してから消滅するまでの停留時間もラジカル密度によって変化し、ラジカル密度が高い場合には停留時間も減少し、一方ラジカル密度が低い場合には停留時間は増大する。
【０２８９】
実際の半導体装置の製造工程を考えると、停留現象が発生するまでのプロセス時間が長すぎると半導体装置の製造スループットが低下するので、ラジカル密度にはおのずから下限が存在する。また停留現象が継続する時間が短すぎると、２〜３あるいは２〜４原子層の好ましい膜厚の酸化膜を安定に形成できなくなるため、ラジカル密度には、おのずから上限が存在する。
【０２９０】
図６１は、ラジカル酸化処理を１７２ｎｍの波長の紫外光を使い、基板酸化を４５０℃で行う場合についての例を示しているが、この関係から、ラジカル分圧の下限は許容プロセス時間を５分間（３００秒）以下として、１×１０^−４ｍＴｏｒｒ（１３３×１０^−７Ｐａ）、ラジカル分圧の上限は、必要停留時間をおよそ１００秒間以上として、１ｍＴｏｒｒ（１３３×１０^−３Ｐａ）になることがわかる。また、これに対応した紫外光照射パワーは、光源２３の窓直下において５〜５０ｍＷ／ｃｍ^２となる。
【０２９１】
図６１では、停留現象の発生と消滅とを表す二本の直線の間隔は、ラジカル分圧が増大するにつれて増大しているように見えるが、図６１の縦軸および横軸は対数でプロットされているため、前記間隔に対応した停留時間の値は、ラジカル分圧と共に実際には減少している。
【０２９２】
上記ＵＶ−Ｏ_２処理の際、酸素ガス分圧は６．６５×１０^−３Ｐａ〜１３３Ｐａ（０．０５〜１０００ｍＴｏｒｒ）、より好ましくは１．３３〜１３．３Ｐａ（１０〜１００ｍＴｏｒｒ）の範囲に設定するのが好ましい。
【０２９３】
なお図５１の基板処理装置３２０を使ったラジカル酸化を、他の波長の紫外光を使って行うことも可能である。この場合、雰囲気ガスによる紫外光の吸収を考えると、基板処理装置３２０の処理容器３２１内において前記１×１０^−４ｍＴｏｒｒ（１．３３×１０^−２ｍＰａ）以上１ｍＴｏｒｒ（１３３ｍＰａ）以下のラジカル密度を実現しようとすると、紫外光源３２４Ｂの駆動エネルギあるいは雰囲気ガス組成を変化させる必要がある。
【０２９４】
例えば波長が１４６ｎｍの紫外光源を前記紫外光源３２４Ｂとして使う場合には、波長が１７２ｎｍの場合よりも２５倍大きい光吸収を考慮して、雰囲気中の酸素分圧を０．０５〜５０ｍＴｏｒｒ（６．７ｍＰａ〜６．７Ｐａ）の範囲に設定する。
【０２９５】
なお、このようにして形成された２〜３原子層分の厚さの酸化膜を窒素ラジカルにより窒化し、酸窒化膜に変換することも可能である。このようにして形成された酸窒化膜は比誘電率がシリコン酸化膜よりも大きいため、ＭＯＳトランジスタのゲート絶縁膜の熱酸化膜換算膜厚をさらに減少させることが可能になる。
［第９実施例］
以下、本発明の第９実施例について説明する。
【０２９６】
本実施例においては図５１の基板処理装置３２０を使い、シリコン基板表面に、先に説明したのと同様なＵＶ−ＮＯラジカル処理により、直接に酸窒化膜を形成する。なお、同様な結果は、先に説明した図３の基板処理装置２０においても得られる。
【０２９７】
図６２（Ａ）は、図５１の基板処理装置３２０を使ってシリコン基板上に０．４ｎｍの厚さに形成した酸化膜を、引き続き図５１の基板処理装置３２０において、前記シャワーヘッド３２１ＢにＮＯガスを供給することにより酸窒化した場合の、エリプソメトリにより求めた膜厚分布を示す。また以下の表５は、図６２（Ａ）の基板において中心部および周辺部の実際の膜厚を、先に説明したＸＰＳ法において検出角を９０°に設定し分解能を下げた測定でＳｉＯ^＋とＳｉ^４＋に相当するピークの比から簡便に求めた結果を示す。ただし酸窒化処理は、ＮＯガスを前記シャワーヘッド３２１Ｂに２００ＳＣＣＭの流量で供給し、前記処理容器３２１の内圧を３．９９Ｐａ（０．０３Ｔｏｒｒ）に維持しながら、紫外光源２４Ｂを前記基準強度で３分間駆動することにより、行っている。基板温度は４５０℃に設定している。
【０２９８】
【表５】

図６２（Ａ）および表５を参照するに、酸窒化処理後における膜厚は、基板中心部および周辺部のいずれにおいても０．４３〜０．４９ｎｍであり、当初の膜厚である約０．４ｎｍからほとんど変化していないことがわかる。また、このようにして処理された酸化膜について、ＸＰＳ分析により窒素の検出を試みたが、窒素原子からのシグナルは検出されなかった。これは、上記の酸窒化処理では、前記酸化膜の窒化は全く進行していないことを意味している。
【０２９９】
図６２（Ｂ）は、同様な条件でシリコン基板表面に酸化膜を０．７ｎｍの厚さに形成した場合の、エリプソメトリで求めた酸窒化処理後の膜厚分布を、また以下の表６は、ＸＰＳ法で検出角を９０°に設定して求めた実際の膜厚を、基板中心部および周辺部について示す。
【０３００】
【表６】

図６２（Ｂ）および表６を参照するに、この場合にも酸窒化処理後における膜厚は、基板中心部および周辺部のいずれにおいても０．６９〜０．６８ｎｍであり、当初の膜厚である約０．７ｎｍからほとんど変化していないことがわかる。このようにして処理された酸化膜について、ＸＰＳ分析により窒素の検出を試みたが、窒素原子からのシグナルは検出されなかった。
【０３０１】
表６の結果および先の表５の結果から、シリコン基板表面に既に形成されている酸化膜のＵＶラジカルＮＯ処理による酸窒化処理では、酸化膜の膜厚がいかに小さくても、膜中に窒素を導入することはできないことがわかる。
【０３０２】
これに対し、図６３（Ａ）は、図５１の基板処理装置３２０において、自然酸化膜を除去したシリコン基板を直接にＵＶラジカルＮＯ処理した場合にシリコン基板表面に形成された膜について、エリプソメトリにより求めた膜厚分布を、また表３は、このようにして得られた膜の、基板中心部および周辺部における膜厚を、ＸＰＳ法により検出角を９０°に設定して求めた結果を示す。ただし図６３（Ａ）の実験では、図５１の基板処理装置３２０においてシャワーヘッド３２１ＢにＮＯガスを２００ＳＣＣＭの流量で供給し、処理容器３２１の内圧を先の場合と同様に３．９９Ｐａ（０．０３Ｔｏｒｒ）に維持しながら、紫外光源３２４Ｂを前記基準強度で３分間駆動することにより、行っている。基板温度は４５０℃に設定している。
【０３０３】
図６３（Ａ）を参照するに、シリコン基板表面にはほぼ一様な膜厚の膜が形成されており、表７より、その膜厚は、基板中心部においても周辺部においても、約０．５ｎｍ程度であることがわかる。
【０３０４】
【表７】

また図６３（Ｂ）は、前記酸窒化処理を、ＮＯガスの流量を１ＳＬＭに設定し、６６５Ｐａ（５Ｔｏｒｒ）の圧力下、紫外光源２４Ｂを前記基準強度で１分間駆動して行った場合の、エリプソメトリによる膜厚分布を示す。さらに以下の表８は、このようにして得られた膜について、基板中心部および周辺部において、検出角を９０°に設定して行なったＸＰＳ法による膜厚測定の結果を示す。
【０３０５】
【表８】

図６３（Ｂ）を参照するに、この場合にも基板表面における形成された膜の膜厚分布はほぼ一様であることがわかり、表８より、その膜厚は、基板中心部においても周辺部においても、約０．５ｎｍであることがわかる。
【０３０６】
以下の表９は、図６３（Ａ）の実験により得られた膜について、ＸＰＳ法により元素分析を行なった結果を示す。
【０３０７】
【表９】

表９を参照するに、このようにして形成された膜では、Ｏ_１ｓ軌道に対応するシグナル、Ｎ_１ｓ軌道に対応するシグナル、およびＳｉ_２ｐ軌道に対応するシグナルが観測され、検出角を９０°に設定した測定では、基板中心部において酸素原子濃度が６７．２３％、窒素原子濃度が１１．１８％、シリコン原子濃度が２１．５９％であることが確認された。また基板周辺部においても、酸素原子濃度が６６．８８％、窒素原子濃度が９．１３％，シリコン原子濃度が２４．２３％であるのが確認された。すなわち、このようにして形成された膜は、窒素を含んだ酸窒化膜であることが確認された。
【０３０８】
同様に、以下の表１０は、図６３（Ｂ）の実験により得られた膜について、ＸＰＳ法により元素分析を行なった結果を示す。
【０３０９】
【表１０】

表１０を参照するに、このようにして形成された膜においても、Ｏ_１ｓ軌道に対応するシグナル、Ｎ_１ｓ起動に対応するシグナル、およびＳｉ_２ｐ軌道に対応するシグナルが観測され、検出角を９０°に設定した測定では、基板中心部において酸素原子濃度が６７．３％、窒素原子濃度が１１．６６％、シリコン原子濃度が２１．２４％であることが確認された。また基板周辺部においても、酸素原子濃度が６７．２％、窒素原子濃度が１１．４４％，シリコン原子濃度が２１．３７％であり、膜中の組成が先の表５の場合よりも均一になっているのが確認された。すなわち、この場合にも組成が一様な酸窒化膜がシリコン基板表面に形成されている。
【０３１０】
ところで前記表１０においてＸＰＳスペクトルの検出角を３０°に設定して行なった測定では、基板中心部および周辺部とも、窒素濃度が９０°の検出角で測定した場合よりもやや減少しているのが見られる。検出角を浅く設定した測定では、酸窒化膜の下部において放出された光電子によるシグナルは膜中を斜めに通過する際に減衰を受けるので、主に膜上部の組成が検出されると考えられる。従って、この表１０の結果は、このようにして形成された酸窒化膜中において、窒素原子は、シリコン基板との界面近傍において比較的濃集していることを示している。同様な傾向は、表９の基板中心部での分析結果においても見られている。
【０３１１】
次に、このようなシリコン基板表面のＵＶ−ＮＯ処理による酸窒化膜形成のカイネティックスについて説明する。
【０３１２】
図６４（Ａ），（Ｂ）は、図３の基板処理装置３２０において、前記シャワーヘッド３２１ＢにＮＯガスを２００ＳＣＣＭの流量で供給し、処理圧力を３．９９Ｐａ（２０ｍＴｏｒｒ）に維持しながら４５０℃において前記紫外光源３２４Ｂを前記基準パワーで駆動し、駆動時間を様々に変化させた場合における、酸窒化膜の膜厚および膜中の窒素濃度をそれぞれ示す。
【０３１３】
図６４（Ａ）を参照するに、前記酸窒化膜の膜厚は時間とともに増大するが、約０．５ｎｍの膜厚に達した時点で、先に図５および８で説明したのと同様な膜成長の停留現象が生じていることがわかる。また図６４（Ａ）中には、このような窒化処理の際に前記紫外光源３２４Ｂを駆動しなかった場合をも記号○示している。この場合には、図６４（Ａ）からわかるように、酸窒化膜の成長は全く生じていない。
【０３１４】
一方、図６４（Ｂ）からは、酸窒化処理を開始した直後においてはＸＰＳ分析の検出角を３０°に設定した場合の窒素濃度が、検出角を９０°に設定した場合よりも小さく現れ、窒素原子は酸窒化膜とシリコン基板との界面近傍に濃集していることがわかる。また図６４（Ｂ）からは、酸窒化処理を継続することにより、この膜厚方向における窒素分布の不均一は徐々に解消することがわかる。
【０３１５】
図６４（Ｂ）の結果は、窒化処理開始直後には窒素濃度の高い酸窒化膜が形成されるが、時間とともに膜中の窒素濃度が減少しており、膜成長機構が時間と共に、徐々に酸化反応主体に移行していることがわかる。処理開始から約２００秒後には、窒素濃度の膜厚方向への不均一は解消している。
【０３１６】
図６５（Ａ），（Ｂ）は、それぞれ図６４（Ａ），（Ｂ）に対応する図であり、前記酸窒化処理を、前記紫外光源３２４Ｂの駆動パワーを前記基準パワーの２０％に設定して行なった場合を示すが、先の図６４（Ａ），（Ｂ）と同様な結果が得られている。すなわち、膜成長の停留現象が、酸窒化膜の膜厚が約０．５ｎｍに達した時点で生じており、また膜成長の初期には高い窒素濃度の酸窒化膜が形成され、窒素原子が酸窒化膜とシリコン基板との界面近傍に濃集していることがわかる。
【０３１７】
これに対し図６６（Ａ），（Ｂ）は、シリコン基板表面の同様な酸窒化処理を、基板温度を５５０℃に設定して実行した場合の膜厚と処理時間の関係、および膜中における窒素濃度の分布と処理時間の関係とをそれぞれ示す。
【０３１８】
まず図６６（Ｂ）を参照するに、ＸＰＳ分析の際の検出角を９０°に設定した場合でも３０°に設定した場合でも、膜中に取り込まれている窒素原子の濃度は図６４（Ｂ）あるいは図６５（Ｂ）の場合よりも実質的に少なく、従って形成されている酸窒化膜は、より酸化膜に近い組成を有していることがわかる。これは、おそらく酸窒化処理の際の基板温度を５５０℃に設定したため、処理容器３２１中に残存する酸素による酸化作用が促進されたことに起因するものと考えられる。
【０３１９】
また図６６（Ａ）では形成された酸窒化膜が酸化膜により近い組成を有しているため、膜成長の停留が、図５および図８で説明した酸化膜の膜成長停留現象が生じる０．４ｎｍにより近い、０．４６ｎｍ前後の膜厚において生じているものと考えられる。
【０３２０】
なお、本実施例では酸窒化膜の膜厚を、先に説明した式（１）およびこれに付随するパラメータを使って求めているが、これは酸化膜について導かれた式であり、酸窒化膜の場合、光電子の脱出深さの効果により、膜厚値が多少大きく算出されている可能性がある。いずれにせよ、本発明で形成される酸窒化膜は、２原子層程度に制御された膜厚を有するものと考えられる。
【０３２１】
図５１の基板処理装置３２０をシリコン基板の酸窒化処理に適用する場合には、紫外光源３２４Ｂとしては、先に図３４で行ったのと同様な考察から、１９２〜１４５ｎｍの波長範囲の紫外光を形成できる光源を使うのが好ましい。
【０３２２】
図５１の基板処理装置３２０を枚葉式の半導体製造プロセスに適用することを考えると、このような光源３２４Ｂは随時点灯および消灯が可能なものであるのが好ましい。現在、このような随時点灯および消灯が可能で、しかも鋭いスペクトルを有する紫外光源として、波長が３０８ｎｍ、２２２ｎｍ、１７２ｎｍ、１４６ｎｍ、および１２６ｎｍのエキシマランプが、商業的に入手可能である。このうち、上記の条件を満たすランプは波長が１７２ｎｍのものと１４６ｎｍのものに限られる。このうち、波長が１４６ｎｍのエキシマランプは１３ｎｍ程度の半値幅を有し、このためスペクトルの一部が１４５ｎｍ以下となり、ランプの状態や個体差如何によっては、酸素ラジカルの励起が生じないとも限らない。このようなことから、図５１の基板処理装置３２０にて紫外光源３２４Ｂとして市販のエキシマランプを使う場合には、１７２ｎｍの波長のものを使うのが好ましい。
【０３２３】
図６７は、このような１７２ｎｍの紫外光を発生するエキシマランプ（誘電体バリア放電管）３４１の概略的構成を示す（特開平７−１９６３０３号公報あるいは特開平８−８５８６１号公報を参照）。
【０３２４】
図６７を参照するにエキシマランプ３４１は、内側石英管３４２と外側石英管３４３とを含む二重円筒形容器を有し、前記内側石英管３４２と外側石英管３４３との間の空間３４７には、Ｘｅガスが３３．２５ｋＰａ（２５０Ｔｏｒｒ）の圧力で封入されている。さらに前記内側石英管３４２の内側面にはアルミニウム薄膜電極３４５が形成されており、さらに前記外側石英管３４５の外側にはメッシュ状の電極３４４が形成されている。また前記空間３４７の軸方向端部にはゲッタ室３４８が形成されており、前記ゲッタ室３４８にはゲッタ３４６が設けられている。前記エキシマランプ３４１は、前記電極３４４と電極３４５との間に電源３５０により交流電圧を印加することにより、自在に点灯・消灯を制御することができる。
【０３２５】
このようなエキシマランプとしては、例えばウシオ電機より市販されている形式ＵＥＲ２０−１７２のもの、あるいはホヤ・ショットより市販されている形式ＨＥＳ１７０３Ｓのものを使うことができる。
【０３２６】
勿論、前記紫外光源は上記のエキシマランプに限定されるものではなく、他に低圧水銀ランプや、場合によってはエキシマレーザを使うことも可能である。
［第１０実施例］
次に、本発明の第１０実施例となるＵＶ−ＮＯ処理による酸窒化膜のウェハ面内均一成膜処理について説明する。
【０３２７】
先の表７を再び参照するに、処理圧３．９９ｐａ（０．０３ｔｏｒｒ）、ＵＶ光パワー１００％の条件下で成膜された酸窒化膜では、膜厚はウェハ中心と周辺でほぼ同じ値を示すものの、表９に示した窒素濃度には２ａｔ％程度の差が存在し、窒素濃度分布が不均一であることを示している。表９の結果は、ＵＶ−ＮＯ処理による酸窒化膜形成においては膜厚と窒素濃度の均一性を両立させる事が重要な課題であることを示している。
【０３２８】
図６８（Ａ）は、上に述べた条件と同一条件で、ただし酸窒化時間を１分３０秒に設定して形成した酸窒化膜について、エリプソメータによる測定で得た膜厚分布を示す。一方図６８（Ｂ）は、酸窒化膜を全く同じ条件で、ただし紫外線ランプを往復運動させながら形成した場合の膜厚分布を示す。図６８（Ａ），（Ｂ）では、ウェハ面内の測定点数が１７点に増やされている。なお、図６８（Ｂ）の実験における紫外線ランプの往復運動は、紫外線ランプを一方のウェハ端から２００ｍｍ離れた他方のウェハ端まで、６０ｍｍ／秒の速度で移動させ、折り返し点で０．１秒間停止させ、さらにウェハ中央でも１秒間停止させるシーケンスで行っている。
【０３２９】
図６８（Ａ）と図６８（Ｂ）を比較するに、図６８（Ｂ）の実験では前述の紫外線ランプの往復運動シーケンスを採用することにより、図６８（Ａ）の実験よりも膜厚分布がより均一になっていることが認められる。
【０３３０】
正確を期するため、図６８（Ａ）および６８（Ｂ）の試料についてＸＰＳ法により膜厚を測定した結果を、それぞれ表１１および表１２に示す。ただし表１１および表１２において周辺部の測定は２点で行っている。また窒素濃度についても図６８（Ａ）の試料に対応する測定結果を表１３に、また図６８（Ｂ）の試料に対応する測定結果を表１４に示している。
【０３３１】
【表１１】

【０３３２】
【表１２】

【０３３３】
【表１３】

【０３３４】
【表１４】

これらの結果を比較すると、紫外線ランプを往復運動させることにより、ウェハ中心部と周辺部とで均一な膜厚での成膜が可能になり、また窒素濃度についても均一な分布が実現できていることがわかる。以上の結果は、紫外線ランプを往復運動させることにより、ウェハ面内での紫外線照射量が均一化されることを示している。
［第１１実施例］
図６９（Ａ）は、本発明の第９〜１０実施例で使われるＮＯガスの導入シーケンスを、温度プロファイルＴと共に示す。
【０３３５】
図６９（Ａ）を参照するに、被処理基板３２２の処理容器３２１への搬入と同時に基板３２２の昇温が開始されるが、このシーケンスでは、昇温の初期段階においては処理容器３２１中に窒素ガスが導入されており、所定の保持温度に達した段階でＮＯガスに切替えられる。さらに前記処理容器３２１中において前記ＮＯガスの濃度が所定値に達した状態で紫外光源３２４Ｂが所定時間駆動され、先に説明したＵＶ−ＮＯ処理が行われる。
【０３３６】
その後、前記紫外光源３２４Ｂはオフされ、さらにＮＯガスの供給が遮断され、基板温度Ｔが室温まで降下した段階で基板３２２が前記処理容器３２１から搬出される。
【０３３７】
これに対し図６９（Ｂ）は、図６９（Ａ）のシーケンスに代わって図５１の基板処理装置３２０において使われる、本発明の第１１実施例によるＮＯガス導入シーケンスを示す。
【０３３８】
図６９（Ｂ）を参照するに、本実施例においても被処理基板３２２の処理容器３２１への搬入と同時に基板３２２の昇温が開始されるが、本実施例においては前記基板３２２の搬入と同時にＮＯガスの導入が開始され、基板温度Ｔが所定値に達した時点で前記紫外光源３２４Ｂが所定時間駆動され、所望のＵＶ−ＮＯ処理が行われる。
【０３３９】
その後、前記紫外光源３２４Ｂはオフされ、さらにＮＯガスの供給が遮断され、基板温度Ｔが室温まで降下した段階で基板３２２が前記処理容器３２１から搬出される。
【０３４０】
図７０（Ａ）および（Ｂ）は、図６９（Ａ）および（Ｂ）のＮＯガス導入シーケンスを使った場合の、それぞれ処理温度と酸窒化膜厚および処理温度と酸窒化膜中の窒素濃度の関係を示す。ただし図７０（Ａ），（Ｂ）中、●は図６９（Ａ）のＮＯ導入シーケンスを使った場合を、○は図６９（Ｂ）のＮＯ導入シーケンスを使った場合を示す。
【０３４１】
図７０（Ａ）を参照するに、基板処理温度が５００℃以下の場合には図６９（Ｂ）のＮＯ導入シーケンスを使っても、また図６９（Ｂ）のＮＯ導入シーケンスを使っても、形成される酸窒化膜の膜厚に実質的な差は生じないが、基板処理温度が５００℃を超えると、図６９（Ｂ）のシーケンスを使った場合に得られる酸窒化膜の膜厚が増大することがわかる。
【０３４２】
この結果を図７０（Ｂ）の膜中窒素濃度の値と比較すると、基板処理温度が５００℃を超えた場合、図６９（Ｂ）のＮＯ導入シーケンスを使うことで膜中の窒素原子濃度が大幅に増大しており、図７０（Ａ）に見られる酸窒化膜の膜厚増大は、主に酸窒化膜中に導入された窒素原子により生じるものであることがわかる。
【０３４３】
このように、処理に先立って処理容器中にＮＯガスを導入することで、ＵＶ−ＮＯ処理により多量の窒素原子を酸窒化膜中に導入することが可能になる。
【０３４４】
なお、図６９（Ａ），（Ｂ）のＮＯガス導入シーケンスは、図３の基板処理装置２０においても使うことができ、同様な効果が得られる。
［第１２実施例］
図７１（Ａ）〜図７２（Ｅ）は、本発明の第１２実施例による半導体装置の製造工程を示す。
【０３４５】
図７１（Ａ）を参照するに、不純物元素をイオン注入して形成された拡散領域３３１ａおよび３３１ｂを有するシリコン基板３３１の表面３３１ｃが、絶縁膜３３５および３３６に形成された開口部３３７において露出される。
【０３４６】
前記露出表面３３１ｃは自然酸化膜を除去され、さらに図５１の基板処理装置３２０中において、先に説明した条件下において、波長が１７２ｎｍの紫外光によりＵＶ−ＮＯ処理を施される。その結果図７１（Ｂ）に示すように前記シリコン基板３３１の表面には、先に説明した成膜停留現象により、膜厚が約０．５ｎｍのＳｉＯＮ膜３３２が一様に形成される。
【０３４７】
次に図７１（Ｃ）の工程において前記ＳｉＯＮ膜３３２上にはＣＶＤ法により、ＺｒＳｉＯ_ｘやＨｆＳｉＯ_ｘ，あるいはＺｒＯ_２やＨｆＯ_２，Ｔａ_２Ｏ_５、Ａｌ_２Ｏ_３などの高誘電体膜３３３が堆積される。
【０３４８】
さらに図７２（Ｄ）の工程においてこのようにして形成された高誘電体膜３３３上に金属電極層３３４を堆積し、これを図７２（Ｅ）の工程においてエッチバックすることにより金属ゲート電極３３４Ｇを形成する。
【０３４９】
本実施例において、図７１（Ａ）のＵＶ−ＮＯ酸窒化工程は、５５０℃を超えない温度で行なうのが好ましく、その際の処理圧力は１．３３〜１．３３×１０^３Ｐａの範囲に設定するのが好ましい。
［第１３実施例］
ところで、エリプソメトリによりウェハ表面に形成された非常に薄い膜の膜厚を測定する場合には、測定中にウェハ表面に吸着する有機分子などにより、見かけ上大きな膜厚値が得られてしまうことがある。特に多点測定においては、測定が終了するまでにこのような事情で測定値が変化しやすく、正確な均一性を出す事が困難である。
【０３５０】
このような事情に鑑み、本発明の発明者は膜厚の均一性について正確を期するため膜厚測定方法の改善を行った。
【０３５１】
より具体的に説明すると、本発明者による改善では、成膜装置の基板搬入口から、エリプソメータのウェハ載置部までの経路の全体を、有機分子を取り除くケミカルフィルターのダウン・フロー下に配置した。このような構成を使うと、測定に使われる雰囲気下にウェハを３時間放置しても、膜厚の見かけの増加は０．０２ｎｍ（０．２Å）程度に抑える事が可能である。
【０３５２】
このようなエリプソメータを使った場合、ウェハ面上の４９点において膜厚測定を行うのに要する測定時間は約１０分であり、この間の見かけの膜厚増加は０．００１ｎｍ（０．０１Å）程度と見積もられている。また測定装置の能力は、定点での繰り返し測定の際の再現性で見ると、分散値σにして０．００６ｎｍ（０．０６Å）であることが確認されている。
【０３５３】
図７６は、このような測定環境下において、上記の成膜条件で径が２００ｍｍのウェハ上に、先に説明したＵＶ−ＮＯ処理により成膜した、膜厚が０．５ｎｍの酸窒化膜の膜厚を４９点測定した結果を示す。
【０３５４】
図７６を参照するに、面内膜厚の分散値σは０．６５％、すなわち膜厚に換算すれば０．００６５ｎｍ（０．０６５Å）程度であり、膜厚のばらつきは、測定限界に匹敵する程度まで減少していることがわかる。これは、径が２００ｍｍウェハの面内で実質的に全く一様な酸窒化膜が得られていることを示している。
【０３５５】
また、先に述べたＵＶ−Ｏ_２処理による酸化膜で同様な測定を行うと、膜厚が０．４ｎｍの酸化膜の場合で膜厚の分散値σが０．７％程度の、非常に優れた均一性が得られていることが確認されている。
【０３５６】
以上、本発明を好ましい実施例について説明したが、本発明は上記の特定の実施例に限定されるものではなく、特許請求の範囲に記載した要旨内において様々な変形・変更が可能である。
【０３５７】
【発明の効果】
請求項１〜３７記載の本発明によれば、高周波プラズマ励起された窒素ラジカルを使って、非常に薄い酸化膜表面を安定に、再現性良く窒化して酸窒化膜を形成することが可能になる。また本発明によれば、高周波プラズマ励起された窒素ラジカルを使って、非常に薄い酸窒化膜表面を安定に、再現性良く窒化して窒素濃度の高い酸窒化膜を所望の膜厚に形成することが可能になる。特に高周波プラズマを使うことにより窒化処理が比較的高い処理圧力でなされるため、はじめに処理容器内を十分に減圧しておくことにより、処理容器内の残存酸素あるいはその他の不純物ガス成分は窒化処理の際にはプラズマガスにより希釈され、残存酸素による余計な酸化や、これに伴う酸窒化膜の増膜の問題を効果的に抑制することができる。特に本発明によれば、高誘電率ゲート絶縁膜の下に形成される非常に薄いベース酸化膜を窒化することが可能で、その結果、かかるベース酸化膜上に高誘電体ゲート絶縁膜を形成した場合に、シリコン基板と高誘電体ゲート絶縁膜との間における金属元素およびシリコンの相互拡散、およびこれに伴う遷移層の形成を抑制することができる。
【０３５８】
またこのような非常に膜厚が薄いことが要求される酸化膜あるいは酸窒化膜などの絶縁膜の窒化処理では、窒素原子の導入に伴う絶縁膜の増膜が避けられないが、本発明では窒化処理前の絶縁膜の膜厚を２〜４原子層分か、それよりも薄く設定することにより、窒化処理後の絶縁膜、すなわち酸窒化膜の膜厚を非常に薄くすることが可能である。
【０３５９】
さらに請求項３８〜５０記載の本発明によれば、同一の基板処理装置においてシリコン基板の紫外光励起ラジカル酸化処理と、かかる紫外光励起ラジカル酸化処理により形成された酸化膜の高周波リモートプラズマを使ったラジカル窒化処理とを、連続して行うことが可能になる。紫外光励起ラジカル酸化処理と高周波リモートプラズマラジカル窒化処理とは処理圧力が大きく異なるが、本発明の基板処理装置では処理容器に２つの排気経路を設けることにより、これらの処理を同一の処理容器にて行うことを可能にしている。特に本発明によれば、高誘電率ゲート絶縁膜の下に形成される非常に薄いベース酸化膜を窒化することが可能で、その結果、かかるベース酸化膜上に高誘電体ゲート絶縁膜を形成した場合に、シリコン基板と高誘電体ゲート絶縁膜との間における金属元素およびシリコンの相互拡散、およびこれに伴う遷移層の形成を抑制することができる。また本発明によれば、処理容器中における第１および第２の排気経路の位置を、処理容器内に高真空を実現するのに必要なターボ分子ポンプが処理容器の外端部に位置するように設定することにより、前記基板処理装置を、その内端部において基板搬送路に結合し、クラスタ型の基板処理装置を容易に構築することが可能になる。
【０３６０】
また請求項５１〜６２記載の本発明によれば、シリコン基板と高誘電体ゲート絶縁膜との間に設けられるベース酸化膜として効果的な非常に薄い酸化膜を、シリコン基板表面のラジカル酸化において酸化膜の膜厚が２〜４原子層分の厚さに達した際に発現する膜成長の停留効果を利用して、一様な厚さに、かつ再現性良く形成することが可能になる。
【０３６１】
さらに請求項６３〜７３記載の本発明によれば、ＮＯ雰囲気を紫外光励起することにより、シリコン基板表面に、直接に酸窒化膜を形成することが可能になる。その際、特に紫外光波長を１４５ｎｍよりも長く１９２ｎｍ以下、例えば１７２ｎｍに設定することにより酸化作用を抑制でき、高い窒素濃度の酸窒化膜を形成することが可能になる。このような酸窒化膜は成膜時に、２原子層分の厚さに対応する約０．５ｎｍの膜厚において成膜の停留を生じ、従ってこの膜厚の酸窒化膜を安定に、再現性良く形成することが可能になる。
【図面の簡単な説明】
【図１】高誘電体ゲート絶縁膜を有する半導体装置装置の構成を示す図である。
【図２】従来のＵＶ−Ｏ_２ラジカル基板処理装置の構成を示す図である。
【図３】本発明の第１実施例による基板処理装置の構成を説明する図である。
【図４】（Ａ），（Ｂ）は、図３の基板処理装置を使って行われる基板の酸化処理を示すそれぞれ側面図および平面図である。
【図５】図３の基板処理装置を使って行なわれる基板の酸化処理工程を示す図である。
【図６】本発明で使われるＸＰＳによる膜厚測定方法を示す図である。
【図７】本発明で使われるＸＰＳによる膜厚測定方法を示す別の図である。
【図８】図３の基板処理装置により酸化膜を形成する際に観測される酸化膜厚成長の停留現象を概略的に示す図である。
【図９】（Ａ），（Ｂ）は、シリコン基板表面における酸化膜形成過程を示す図である。
【図１０】本発明の第１実施例において得られた酸化膜のリーク電流特性を示す図である。
【図１１】（Ａ），（Ｂ）は、図１０のリーク電流特性の原因を説明する図である。
【図１２】（Ａ）〜（Ｃ）は、図３の基板処理装置において生じる酸化膜形成工程を示す図である。
【図１３】図３の基板処理装置において使われるリモートプラズマ源の構成を示す図である。
【図１４】（Ａ）〜（Ｃ）はそれぞれ、ＲＦリモートプラズマとマイクロ波プラズマの特性を比較する図、および標準的なリモートプラズマ源およびマイクロ波プラズマ源の構成を示す図である。
【図１５】ＲＦリモートプラズマとマイクロ波プラズマの特性を比較する別の図である。
【図１６】（Ａ），（Ｂ）は、図３の基板処理装置を使って行われる酸化膜の窒化処理を示すそれぞれ側面図および平面図である。
【図１７】（Ａ），（Ｂ）は、ＲＦリモートプラズマで窒化された酸化膜中の窒素濃度と膜厚の関係を、窒化をマイクロ波プラズマで行なった場合と比較して示す図である。
【図１８】本発明で使われるＸＰＳの概略を示す図である。
【図１９】酸化膜のリモートプラズマによる窒化時間と膜中窒素濃度との関係を示す図である。
【図２０】酸化膜の窒化時間と、窒素の膜内分布との関係を示す図である。
【図２１】酸化膜の窒化処理により形成された酸窒化膜のウェハごとの膜厚変動を示す図である。
【図２２】本発明の第１実施例による酸化膜の窒化処理に伴う膜厚増を示す図である。
【図２３】（Ａ），（Ｂ）は、図３の基板処理装置において実現される窒化処理の面内均一性を示す図である。
【図２４】ＵＶ−Ｏ_２酸化膜あるいはＵＶ−ＮＯ酸窒化膜のＲＦ窒化処理に伴う増膜と膜中窒素濃度との関係を示す図である。
【図２５】ＵＶ−Ｏ_２酸化膜のＲＦ窒化処理を示すフローチャートである。
【図２６】（Ａ）〜（Ｃ）は、本発明の第１実施例で得られた酸窒化膜上への高誘電体膜形成に伴いＳｉ_２ｐ軌道のＸＰＳスペクトルに現れるケミカルシフトを示す図である。
【図２７】本発明の第１実施例で得られた酸窒化膜に生じる増膜を、高誘電体膜形成の前後で比較して示す図である。
【図２８】（Ａ），（Ｂ）は、本発明の第２実施例による基板処理方法を示すフローチャートである。
【図２９】（Ａ），（Ｂ）は、図２８（Ａ），（Ｂ）の工程により形成された酸窒化膜の膜厚と膜中窒素濃度をそれぞれ示す図である。
【図３０】（Ａ），（Ｂ）は、本発明第２実施例の比較例による基板処理方法を示すフローチャートである。
【図３１】（Ａ），（Ｂ）は、図３０（Ａ），（Ｂ）の工程により形成された酸窒化膜の膜厚と膜中窒素濃度をそれぞれ示す図である。
【図３２】本発明の第３実施例による基板処理方法を示すフローチャートである。
【図３３】（Ａ），（Ｂ）は、本発明第３実施例の基板処理方法により形成された酸窒化膜の膜厚と、比較例による酸窒化膜の膜厚とを示す図である。
【図３４】ＮＯ分子の様々な励起状態におけるポテンシャルカーブを示す図である。
【図３５】本発明の第４実施例による、ＵＶ−ＮＯ酸化膜のＲＦ窒化処理を示すフローチャートである。
【図３６】図３５のプロセスで得られた酸窒化膜中の窒素原子の分布を示す図である。
【図３７】（Ａ），（Ｂ）は、酸窒化膜中における窒素原子の分布状態の例を示す図である。
【図３８】図３の基板処理装置を使ってクラスタ型基板処理システムを構成した場合の問題点を説明する図である。
【図３９】（Ａ），（Ｂ）は、本発明の第５実施例によるクラスタ型基板処理システムの構成を示す図である。
【図４０】（Ａ），（Ｂ）は、図３９の基板処理システムによる基板の酸化処理を示す図である。
【図４１】（Ａ），（Ｂ）は、図３９の基板処理システムによる基板の窒化処理を示す図である。
【図４２】本発明の第６実施例による半導体装置の構成を示す図である。
【図４３】本発明の第６実施例による基板処理方法を示すフローチャートである。
【図４４】本発明の第６実施例で使われる初期酸化膜の膜厚分布を説明する図である。
【図４５】（Ａ）〜（Ｃ）は、本発明の第６実施例により形成される酸窒化膜の膜厚分布を説明する図である。
【図４６】（Ａ）〜（Ｄ）は、本発明の第６実施例による酸窒化膜形成プロセスのカイネティックスを説明する図である。
【図４７】（Ａ）〜（Ｄ）は、本発明の第６実施例による酸窒化膜形成プロセスのカイネティックスを説明する別の図である。
【図４８】（Ａ），（Ｂ）は、本発明の第６実施例による酸窒化膜形成における、酸化膜の窒素ドープメカニズムを示す図である。
【図４９】（Ａ），（Ｂ）は、本発明の第６実施例により形成された酸窒化膜中の窒素原子の分布を、酸素原子およびＳｉ原子の分布と共に示す図である。
【図５０】（Ａ），（Ｂ）は、本発明の第６実施例により形成された酸窒化膜中の窒素原子の分布を、酸素原子およびＳｉ原子の分布と共に示す別の図である。
【図５１】本発明の第７実施例で使われる基板処理装置の構成を示す図である。
【図５２】（Ａ）〜（Ｃ）は、図５１の基板処理装置を使って形成した酸化膜の膜厚分布を示す図である。
【図５３】図５１の基板処理装置を使って形成した酸化膜について、処理時間と膜厚との関係を示す図である。
【図５４】（Ａ）〜（Ｅ）は、図５１の基板処理装置を使って形成した酸化膜の膜厚分布を示す別の図である。
【図５５】（Ａ）〜（Ｅ）は、図５１の基板処理装置を使って形成した酸化膜の膜厚分布を示すさらに別の図である。
【図５６】（Ａ），（Ｂ）は、比較対照例による酸化膜の膜厚分布を示す図である。
【図５７】図５１の基板処理装置の最適走査領域決定手順を示すフローチャートである。
【図５８】図５１の基板処理装置の最適光源駆動エネルギ決定手順を示すフローチャートである。
【図５９】本発明の第８実施例による半導体装置の構成を示す図である。
【図６０】本発明の第８実施例において使われるクラスタ型基板処理システムの構成を示す図である。
【図６１】本発明の第８実施例で使われるプロセス条件を確定する図である。
【図６２】（Ａ），（Ｂ）は、本発明の第９実施例において、シリコン基板表面に形成された酸化膜をＵＶ−ＮＯ窒化処理した場合の膜厚分布を示す図である。
【図６３】（Ａ），（Ｂ）は、本発明の第９実施例において、シリコン基板表面にＵＶ−ＮＯ窒化処理により直接に酸窒化膜を形成した場合の膜厚分布を示す図である。
【図６４】（Ａ），（Ｂ）は、本発明の第９実施例による、ＵＶ−ＮＯ窒化処理によるシリコン基板表面上への酸窒化膜形成のカイネティックスを示す図である。
【図６５】（Ａ），（Ｂ）は、本発明の第９実施例による、ＵＶ−ＮＯ窒化処理によるシリコン基板表面上への酸窒化膜形成のカイネティックスを示す別の図である。
【図６６】（Ａ），（Ｂ）は、本発明の第９実施例による、ＵＶ−ＮＯ窒化処理によるシリコン基板表面上への酸窒化膜形成のカイネティックスを示すさらに別の図である。
【図６７】紫外光源の例を示す図である。
【図６８】本発明の第１０実施例による基板処理工程により得られた酸窒化膜の膜厚分布を示す図である。
【図６９】（Ａ），（Ｂ）は、本発明の第１１実施例によるＮＯガス導入シーケンスを示す図である。
【図７０】（Ａ），（Ｂ）は、図６９（Ａ），（Ｂ）のＮＯガス導入シーケンスを使って形成された酸窒化膜の膜厚および膜中窒素濃度を示す図である。
【図７１】（Ａ）〜（Ｃ）は、本発明の第１２実施例による半導体装置の製造工程を説明する図（その１）である。
【図７２】（Ｄ），（Ｅ）は、本発明の第１２実施例による半導体装置の製造工程を説明する図（その２）である。
【図７３】本発明の第１実施例における好ましいＲＦ−Ｎ_２処理条件を示す図である。
【図７４】本発明の第６実施例におけるプロセス条件と膜厚分布との関係を示す図である。
【図７５】（Ａ），（Ｂ）は、それぞれシリコン酸化膜のＸＰＳスペクトル、およびＸＰＳスペクトルに現れるケミカルシフトと膜厚との関係を示す図である。
【図７６】径が２００ｍｍのウェハ上にＵＶ−ＮＯ処理により形成された酸窒化膜の膜厚分布を改良されたエリプソメトリにより測定した結果を示す図である。
【符号の説明】
１００，２００　半導体装置
１　シリコン基板
２　ベース酸化膜
２Ａ，３３２，３４２　ベース酸化膜，窒化膜
３，３３３，３４３　高誘電体膜
３３１ａ，３３１ｂ　拡散領域
１０，２０，４０　基板処理装置
１１，２１，３２１　処理容器
１１Ａ，２２，３２１Ａ　基板保持台
１１Ｂ，３２１Ｂ　シャワーヘッド
１１ａ，３２１ａ　ヒータ
１１Ｃ，３２１Ｄ　光学窓
１２，３２２　被処理基板
１３，３２４Ｂ　紫外光源
２１Ａ，２１Ｅ　排気口
２１Ｂ　プロセス空間
２１Ｃ　基板搬入・搬出室
２１Ｇ　石英ライナ
２１ｃ，２２ｂ，２２ｃ　パージライン
２１Ｄ　ガスノズル
２２Ａ　ヒータ
２２Ｂ　磁気シール槽
２２Ｃ　基板回転機構
２３Ａ，２３Ｃ，２３Ｄ，２４Ａ，２４Ｃ，２９Ａ，２９Ｃ，２９Ｄ　バルブ
２３Ｂ，２９Ｂ　ターボ分子ポンプ
２４　ドライポンプ
２５　紫外光源
２５Ａ　光学窓
２６　リモートプラズマ源
２６Ａ　ブロック
２６Ｂ　フェライトコア
２６Ｃ　プラズマ
２６ａ　ガス循環通路
２６ｂ　ガス入り口
２６ｃ　ガス出口
２６ｄ　コーティング
２６ｅ　イオンフィルタ
２７　基板搬送ユニット
２７Ａ　ゲートバルブ
２８　磁気シール
３０　クラスタ型基板処理装置
３１Ａ，３１Ｂ　カセットモジュール
３２　基板搬送室
３３　洗浄室
３４　酸化・窒化室
３５　ＣＶＤ室
３６　熱処理室
４１　シリコン基板
４２　酸化膜
４３　ＺｒＳｉＯ_ｘ膜
３２１Ｂ’　酸素ガス供給ライン
３２１Ｃ　排気口
３２３　結合部
３２３Ａ，３２４ｂ，３２４ｃ　不活性ガス供給ライン
３２４　紫外光露光装置
３２４Ａ　光学窓
３２４Ｃ　ロボット
３２４Ｄ　空間
３２４Ｅ　排気口
３２４Ｆ　遮蔽板
３２５　制御装置
３３１，３４１　シリコン基板
３５０　クラスタ型基板処理装置
３５１　ロードロック
３５２　前処理室
３５３　ＵＶＯ_２ラジカル酸化処理室
３５４　ＣＶＤ室
３５５　冷却室
３５６　基板搬送室
４２６Ｃ　プラズマ
４２６Ｄ　プラズマ室
４２６ｂ　ガス導入口
４２６ｃ　トラップ
４２６ｄ　石英ライナ[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device, and more particularly to a method for manufacturing an ultra-miniaturized high-speed semiconductor device having a high dielectric film.
[0002]
In today's ultrahigh-speed semiconductor devices, a gate length of 0.1 μm or less is becoming possible with the progress of the miniaturization process. In general, the operating speed of a semiconductor device increases with miniaturization.However, in such a very miniaturized semiconductor device, the thickness of the gate insulating film is reduced according to a scaling rule as the gate length is reduced by miniaturization. Need to be done.
[0003]
[Prior art]
However, when the gate length is 0.1 μm or less, the thickness of the gate insulating film must be set to 1 to 2 nm or less when a conventional thermal oxide film is used. In the insulating film, a problem that a tunnel current increases and a gate leakage current increases as a result cannot be avoided.
[0004]
Under such circumstances, the relative dielectric constant is much higher than that of the thermal oxide film, and therefore, even if the actual film thickness is large,₂Ta with small film thickness when converted to film₂O₅And Al₂O₃, ZrO₂, HfO₂And ZrSiO₄Or HfSiO₄It has been proposed to apply such a high dielectric material (so-called high-K material) to the gate insulating film. By using such a high-dielectric material, a gate insulating film having a physical thickness of about 10 nm can be used even in an ultra-high-speed semiconductor device having a gate length of 0.1 μm or less, which is extremely short. Gate leak current can be suppressed.
[0005]
For example, Ta₂O₅The film is Ta (OC₂H₅)₅And O₂It is known that it can be formed by a CVD method using as a gaseous material. Typically, the CVD process is performed in a vacuum environment at a temperature of about 480 ° C. or higher. Ta formed in this manner₂O₅The film is further heat-treated in an oxygen atmosphere, so that oxygen deficiency in the film is eliminated and the film itself is crystallized. Ta crystallized in this manner₂O₅The film shows a large relative permittivity.
[0006]
From the viewpoint of improving carrier mobility in the channel region, an extremely thin base oxide film having a thickness of 1 nm or less, preferably 0.8 nm or less is interposed between the high dielectric gate oxide film and the silicon substrate. preferable. The base oxide film needs to be very thin, and if the thickness is large, the effect of using the high dielectric film as the gate insulating film is offset. On the other hand, such a very thin base oxide film needs to uniformly cover the surface of the silicon substrate, and is required not to form defects such as interface states.
[0007]
Conventionally, a thin gate oxide film is generally formed by rapid thermal oxidation (RTO) treatment of a silicon substrate. However, if a thermal oxide film is formed to a desired thickness of 1 nm or less, it is difficult to form a thin gate oxide film. It is necessary to lower the processing temperature. However, a thermal oxide film formed at such a low temperature tends to include defects such as interface states, and is not suitable as a base oxide film of a high dielectric gate oxide film.
[0008]
FIG. 1 shows a schematic configuration of a high-speed semiconductor device 100 having a high dielectric gate insulating film.
[0009]
Referring to FIG. 1, a semiconductor device 100 is formed on a silicon substrate 1, and a Ta base is formed on the silicon substrate 1 via a thin base oxide film 2.₂O₅, Al₂O₃, ZrO₂, HfO₂, ZrSiO₄, HfSiO₄A high dielectric gate insulating film 3 is formed, and a gate electrode 4 is formed on the high dielectric gate insulating film 3.
[0010]
In the semiconductor device 100 of FIG. 1, nitrogen (N) is doped into the surface portion of the base oxide film layer 2 within a range where the flatness of the interface between the silicon substrate 1 and the base oxide film 2 is maintained. , An oxynitride film 2A is formed. By forming the oxynitride film 2A having a larger relative dielectric constant than the silicon oxide film in the base oxide film 2, the equivalent oxide thickness of the base oxide film 2 can be further reduced.
[0011]
As described above, in the high-speed semiconductor device 100, the thickness of the base oxide film 2 is preferably as small as possible.
[0012]
[Patent Document 1] JP-A-2002-100267
[Patent Document 2] JP-A-7-196303
[Patent Document 3] JP-A-8-85861
[Non-Patent Document 1] H. Lu, et al. , {Appl. Phys, Lett. $ 71, $ pp. 2764, 1997
[Non-Patent Document 2] {Lucovsky, et al. , {Appl. {Phys. {Lett. $ 74, $ pp. 2005, $ 1999
[Non-Patent Document 3] Watanabe, K. , @J. {Appl. {Phys. $ 90, $ pp. 4701, $ 2001
[0013]
[Problems to be solved by the invention]
However, it has been much more difficult to form the base oxide film 2 uniformly and stably with a thickness of 1 nm or less, for example, 0.8 nm or less, and further, about 0.3 to 0.4 nm. . For example, when the film thickness is 0.3 to 0.4 nm, the oxide film has a film thickness of only 2 to 3 atomic layers.
[0014]
In order to exhibit the function of the high dielectric gate insulating film 3 formed on the base oxide film 2, it is necessary to crystallize the deposited high dielectric film 3 by heat treatment and to compensate for oxygen deficiency. When such a heat treatment is performed on the high dielectric film 3, the thickness of the base oxide film 2 increases, and the effective gate insulating film is formed by using the high dielectric gate insulating film 3. The reduction in thickness was essentially offset.
[0015]
Such an increase in the thickness of the base oxide film 2 due to the heat treatment may be caused by the interdiffusion of oxygen atoms and silicon atoms at the interface between the silicon substrate 1 and the base oxide film 2 and the formation of a silicate transition layer due to the interdiffusion. This suggests the possibility of growth of the base oxide film 2 due to intrusion of oxygen into the substrate. Such a problem of an increase in the film thickness due to the heat treatment of the base oxide film 2 becomes very serious particularly when the film thickness of the base oxide film 2 is reduced to a thickness of several atomic layers or less, which is desirable as the base oxide film. It becomes a problem.
[0016]
Under such circumstances, the inventor of the present invention has proposed that a UV-excited oxygen radical (UVO) capable of forming a high-quality oxide film at a low film formation rate under a low radical density is used for forming a base oxide film.₂The use of a (radical) substrate processing apparatus was previously proposed.
[0017]
FIG. 2 shows a conventional UVO₂1 shows a schematic configuration of a radical substrate processing apparatus 10.
[0018]
Referring to FIG. 2, the substrate processing apparatus 10 includes a processing container 11 for holding a substrate 12 under reduced pressure, and the substrate 12 is held on a holding table 11A having a heater 11a. Further, a shower head 11B is provided in the processing container 11 so as to face the substrate 12 to be processed on the holding table 11A.₃, N₂An oxidizing gas composed of O, NO or a mixture thereof is supplied.
[0019]
The shower head 11B is formed of a material that is transparent to ultraviolet light such as quartz, and a window 11C for transmitting ultraviolet light such as quartz in the processing container 11 exposes the substrate 12 to be processed on the holding table 11A. It is formed as follows. Further, an ultraviolet light source 13 movable along the surface of the window 11C is formed outside the window 11C.
[0020]
A silicon substrate is introduced into the processing container 11 of FIG. 2 as the substrate to be processed 12, the inside of the processing container 11 is evacuated and decompressed, and then an oxidizing gas such as oxygen is introduced. Form active radicals such as O * in the gas. Such UV-activated radicals oxidize the exposed surface of the silicon substrate 12, and as a result, a very thin oxide film of about 0.5 to 0.8 nm is formed on the surface of the silicon substrate 12.
[0021]
In the substrate processing apparatus 10 of FIG. 2, the oxide film can be formed to have a uniform thickness by moving the ultraviolet light source 13 along the optical window 11C.
[0022]
Since the oxide film thus formed is formed by an ultraviolet-activated oxidation treatment, Zhang et al. (Zhang, JY, et al., Appl. Phys .. Let. 71 (20), 17 November 1997, pp. 2964-2966), it has few defects such as interface states and is suitable as a base oxide film under a high dielectric gate insulating film.
[0023]
As previously described, the base oxide underneath the high-k gate dielectric must be very thin;₂Using a radical substrate processing apparatus, a base oxide film having a thickness of about 0.8 nm has been realized. However, if a thinner base oxide film is to be formed on a silicon substrate, it becomes difficult to control the film thickness, and it has conventionally been very difficult to form a uniform thickness base oxide film with high accuracy. .
[0024]
By the way, conventionally, when a metal oxide film having a small interatomic valency, ie, a so-called “low rigidity” metal oxide film is formed directly on the surface of a silicon single crystal substrate having a large interatomic valency, so to speak, It has been pointed out that there is a possibility that the interface between the metal oxide film and the metal oxide film becomes mechanically unstable to generate defects (for example, G. @Lucovsky, @ et @ al., @Appl. @Phys. @Let. In order to avoid this problem, it has been proposed to form an oxynitride layer in which one atomic layer of nitrogen is introduced at the interface between the silicon substrate and the metal oxide film as a transition layer. In addition, forming the oxynitride film as the base oxide film of the high dielectric gate insulating film in this way prevents the interdiffusion between the metal element or oxygen in the high dielectric gate insulating film and silicon constituting the silicon substrate. It is considered to be effective for suppressing the diffusion of the dopant from the electrode.
[0025]
In forming such an oxynitride layer, a technique has been proposed in which the surface of an oxide film is nitrided by microwave-excited remote plasma. However, in such a nitriding process using microwaves, 1.33 × 10^-1~ 1.33 × 10^-4Pa (10^-3-10^-6A very high degree of vacuum of about Torr) is required. When nitriding is performed at such a very high degree of vacuum, the effects of trace impurities such as oxygen and moisture remaining in the processing vessel cannot be ignored, and an oxidation reaction occurs during the nitriding process, resulting in an oxide film. May be increased. If the oxide film is increased during the oxynitriding process, the effect of using the high dielectric gate insulating film is offset.
[0026]
Conventionally, such an extremely thin oxynitride film is stably and reproducibly nitrided at a vacuum degree which can be easily reached, which is used in a normal semiconductor process, and without increasing the film thickness by oxidation. It was very difficult.
[0027]
Accordingly, it is a general object of the present invention to provide a new and useful substrate processing method and apparatus which solve the above-mentioned problems.
[0028]
A more specific object of the present invention is to provide a substrate processing method for forming an extremely thin insulating film on a substrate, a semiconductor device using such an insulating film, and a method for manufacturing the same.
[0029]
Another object of the present invention is to stably form an extremely thin oxide film having a thickness of typically 2 to 4 atomic layers or less on the surface of a silicon substrate, and further form an oxynitride film by nitriding the oxide film. It is an object of the present invention to provide a substrate processing method and a substrate processing apparatus that can perform the processing.
[0030]
Another object of the present invention is to form an extremely thin oxynitride film, typically 2 to 4 atomic layers or less in thickness, on a silicon substrate surface, and then nitridate the oxynitride film to form an oxide with a higher nitrogen concentration. An object of the present invention is to provide a substrate processing apparatus capable of forming a nitride film to a desired thickness.
[0031]
Another object of the present invention is to stably form an extremely thin oxide film or nitride film having a thickness of typically 2 to 4 atomic layers or less on the surface of a silicon substrate and further stably nitride the oxide or nitride film. An object of the present invention is to provide a cluster type substrate processing system including a processing apparatus.
[0032]
Another object of the present invention is to provide a substrate processing method capable of forming a very thin oxynitride film directly and stably on a silicon substrate with good reproducibility.
[0033]
[Means for Solving the Problems]
The present invention solves the above problems,
As described in claim 1,
Forming nitrogen radicals by high-frequency plasma;
Supplying the nitrogen radicals to the surface of the insulating film containing oxygen, and nitriding the surface of the insulating film.
As described in claim 2,
The method according to claim 1, wherein the insulating film is an oxide film.
[0034]
As described in claim 3,
3. The method according to claim 2, wherein the oxide film has a thickness of 0.4 nm or less.
As described in claim 4,
The method according to claim 1, wherein the insulating film is an oxynitride film.
As described in claim 5,
5. The insulating film according to claim 1, wherein the nitrogen radicals are supplied along with a flow of a gas formed to flow along a surface of the insulating film. 6. By nitriding method, or
As described in claim 6,
6. The insulating film according to claim 5, wherein the flow of the gas flows from a first side of the substrate on which the insulating film is formed to a second side that is radially opposed. By way or
As described in claim 7,
The method according to claim 6, wherein the flow of the gas is exhausted on the second side of the substrate to be processed.
As described in claim 8,
The step of forming nitrogen radicals includes a step of exciting nitrogen gas by high-frequency plasma, and a step of removing nitrogen ions generated by the excitation of the nitrogen gas by a diffusion plate or an ion filter. Item 1 to 7, by the method of nitriding an insulating film according to any one of, or
As described in claim 9,
The method according to claim 1, wherein the high-frequency plasma is formed by exciting nitrogen gas at a frequency of about 400 kHz.
As described in claim 10,
10. The method according to claim 1, wherein the step of nitriding the surface of the insulating film is performed at a pressure in a range of 0.67 Pa to 1.33 kPa. Or
As described in claim 11,
Prior to the step of supplying nitrogen radicals to the surface of the insulating film, the method further includes a step of purging a process space in which the insulating film is held to a pressure lower than that used in a nitriding step of the surface of the insulating film. The method for nitriding an insulating film according to any one of claims 1 to 10, or
As described in claim 12,
In the purging step, the process space is set to 1.33 × 10^-1~ 1.33 × 10^-4Evacuating to a pressure of Pa, by the method of nitriding an insulating film according to claim 11, or
As described in claim 13,
The method according to any one of claims 1 and 4 to 12, wherein the insulating film has a thickness of about 0.4 nm, or
As described in claim 14,
The method according to claim 1, wherein the insulating film is an oxide film formed by treating a silicon substrate surface with ultraviolet light excited oxygen radicals. Or
As described in claim 15,
Forming an insulating film on the silicon substrate surface;
Forming nitrogen radicals by high-frequency plasma;
Supplying the nitrogen radicals to the insulating film surface, and nitriding the insulating film surface;
Forming a high-dielectric film on the insulating film whose surface has been nitrided.
As described in claim 16,
The method according to claim 15, wherein the insulating film is an oxide film.
As described in claim 17,
17. The method according to claim 16, wherein the oxide film has a thickness of 0.4 nm or less.
As described in claim 18,
The method according to claim 15, wherein the insulating film is an oxynitride film.
As described in claim 19,
19. The semiconductor device according to claim 15, wherein the nitrogen radicals are supplied along with a flow of a gas formed to flow along a surface of the insulating film. By manufacturing method or
As described in claim 20,
20. The manufacturing of a semiconductor device according to claim 19, wherein the flow of the gas flows from a first side of the silicon substrate on which the insulating film is formed to a second side radially opposed to the first side. By way or
As described in claim 21,
21. The method according to claim 20, wherein the flow of the gas is exhausted on the second side of the silicon substrate.
As described in claim 22,
22. The method according to claim 15, wherein the step of forming nitrogen radicals includes a step of exciting nitrogen gas by high-frequency plasma and a step of removing nitrogen ions generated by the excitation of the nitrogen gas by an ion filter. A method for manufacturing a semiconductor device according to any one of the above, or
As described in claim 23,
The method according to any one of claims 15 to 22, wherein the high-frequency plasma is formed by exciting a nitrogen gas at a frequency of about 400 kHz.
As described in claim 24,
24. The method according to claim 15, wherein the step of nitriding the surface of the insulating film is performed at a pressure in a range of 0.67 Pa to 1.33 kPa. Or
As described in claim 25,
Prior to the step of supplying nitrogen radicals to the surface of the insulating film, the method further includes a step of purging a process space in which the insulating film is held to a pressure lower than that used in a nitriding step of the surface of the insulating film. The method for manufacturing a semiconductor device according to any one of claims 15 to 24,
As described in claim 26,
In the purging step, the process space is set to 1.33 × 10^-1~ 1.33 × 10^-4The method of manufacturing a semiconductor device according to claim 25, wherein the gas is exhausted to a pressure of Pa.
As described in claim 27,
27. The method according to claim 15, wherein the insulating film has a thickness of about 0.4 nm.
As described in claim 28,
The method of manufacturing a semiconductor device according to any one of claims 15 to 27, wherein the step of forming the insulating film includes a step of treating the surface of a silicon substrate with ultraviolet light excited oxygen radicals.
As described in claim 29,
2. The method according to claim 1, wherein the step of forming the insulating film and the step of nitriding the insulating film are performed continuously in the same processing apparatus without exposing the silicon substrate to the air in the middle. The method for manufacturing a semiconductor device according to any one of 15 to 28, or
As described in claim 30,
The step of forming the insulating film and the step of nitriding the insulating film are continuously performed without exposing the silicon substrate to the air in the same processing apparatus, and performing the step of forming the insulating film. The step of purging a process space in which the insulating film is held is performed 0 to 4 times between the step of nitriding the insulating film and the step of nitriding the insulating film. The method of manufacturing a semiconductor device according to
As described in claim 31,
A nitrogen radical forming unit that forms nitrogen radicals by high-frequency plasma;
A processing container for holding the substrate to be processed on which the insulating film is formed,
A substrate processing apparatus, wherein the processing container is supplied with the nitrogen radicals from the nitrogen radical forming unit, and supplies the nitrogen radicals to the insulating film surface to nitride the insulating film surface, or
As described in claim 32,
The processing container has the nitrogen radical forming portion on a side surface, forms a gas flow so as to flow along the surface of the insulating film, and allows the nitrogen radical to flow along the surface of the insulating film. The substrate processing apparatus for an insulating film according to claim 31, wherein the substrate is supplied to the surface of the insulating film while riding on a flow of the formed gas, or
As described in claim 33,
33. The gas flow, wherein the gas flows from the first side of the substrate on which the insulating film is formed to the second side radially opposite to the inside of the processing container. By the described substrate processing equipment, or
As described in claim 34,
The substrate processing apparatus according to claim 33, wherein the processing container is exhausted on the second side of the substrate to be processed, or
As described in claim 35,
35. The radical generator according to claim 31, wherein the radical forming unit includes a gas passage, and a high-frequency plasma forming unit formed in a part of the gas passage and plasma-exciting a nitrogen gas passing through the gas passage. Out of which, by the substrate processing apparatus according to any one of the above, or
As described in claim 36,
36. The substrate processing apparatus according to claim 35, wherein the high-frequency plasma generator excites nitrogen gas at a frequency of about 400 kHz.
As described in claim 37,
37. The processing container according to claim 31, wherein an exhaust system capable of reducing the pressure inside the processing container to a pressure lower than that used in a nitriding step of the insulating film surface is connected to the processing container. By the substrate processing apparatus according to any one of the above, or
As described in claim 38,
A processing container that defines a processing space and includes a holding table that holds a substrate to be processed in the processing space,
A first radical source provided on the processing container on a first end side with respect to the holding table;
A second radical source provided on the processing container on the side of the first end with respect to the holding table;
A first exhaust path that is provided on the processing container on a side of a second end opposite to the first end with respect to the holding table, and exhausts the processing space to a first processing pressure;
A substrate processing apparatus comprising a second exhaust path for exhausting the processing space to a second processing pressure on the processing container, on the side of the second end with respect to the holding table, or
As described in claim 39,
The first exhaust path is driven when the first radical source is driven, and the second exhaust path is driven when the second radical source is driven. The substrate processing apparatus according to claim 38, or
As described in claim 40,
The first radical source includes an ultraviolet light source that excites oxygen gas supplied into the processing container, and the second radical source includes a remote plasma source that is supplied with nitrogen gas and excites the nitrogen gas. The substrate processing apparatus according to claim 38 or 39, wherein:
[0035]
As described in claim 41,
The first radical source includes a nozzle for flowing oxygen gas along the surface of the substrate to be processed on the holding table, and the ultraviolet light source is provided at a position between the nozzle and the substrate to be processed, and 41. The substrate processing apparatus according to claim 40, wherein an oxygen gas released from the nozzle through a window is activated, or
As described in claim 42,
42. The substrate processing apparatus according to claim 40, wherein the first exhaust path includes a turbo molecular pump.
[0036]
As described in claim 43,
43. The substrate processing apparatus according to claim 40, wherein the second exhaust path includes a mechanical booster pump.
As described in claim 44,
The substrate processing apparatus according to claim 42, wherein the turbo-molecular pump is boosted by a mechanical booster pump, or
As described in claim 45,
The substrate processing apparatus according to any one of claims 39 to 44, wherein the processing container has a substrate loading / unloading port at the second end.
As described in claim 46,
46. The substrate according to claim 39, wherein the first and second exhaust paths exhaust the processing space through an exhaust port formed near the second end in the processing container. By processing equipment or
As described in claim 47,
47. The substrate of claim 46, wherein the first exhaust path includes a turbo-molecular pump coupled to the processing space via the exhaust port near the second end of the processing vessel. By processing equipment or
As described in claim 48,
The substrate processing apparatus according to any one of claims 38 to 47, wherein the holding table is provided rotatably, and a rotation mechanism that rotates the holding table is further provided. Or
As described in claim 49,
A processing container that defines a processing space and includes a holding table that holds a substrate to be processed in the processing space,
A first radical source provided on the processing vessel;
A second radical source provided on the processing vessel;
A first exhaust path provided on the processing container and exhausting the processing space to a first processing pressure;
A second exhaust path that is provided on the processing container and exhausts the processing space to a second processing pressure;
The first exhaust path is provided so as to exhaust the processing space on the opposite side of the first radical source across the substrate to be processed on the holding table, and the second exhaust path Is provided to exhaust the processing space on the opposite side of the second radical source across the substrate to be processed on the holding table, or
As set forth in claim 50,
A substrate transfer chamber,
In a cluster-type substrate processing apparatus including a plurality of processing chambers coupled to the substrate transfer chamber, one of the plurality of processing chambers,
A processing vessel having a substrate loading / unloading port coupled to the substrate transfer chamber at a first end, a first radical source at a second opposed end, and defining a process space therein; When,
A substrate holder that is rotatably provided between the first end and the second end in the process space and that holds a substrate to be processed;
A first processing gas introduction unit that is provided between the first end and the substrate holder in the process space and that introduces a first processing gas into the process space;
A second processing gas introduction unit that introduces a second processing gas into the first radical source;
A second radical source provided on the processing container to activate the first processing gas between the first processing gas introduction unit and the substrate holder;
A first exhaust port provided at a portion closer to the first end than the substrate holding table in the process space;
A second exhaust port provided at a portion closer to the second end than the substrate holding table in the process space;
A first pump coupled to the first exhaust port and evacuating the process space to a first processing pressure;
A second pump coupled to the second exhaust port and evacuating the process space to a second, lower processing pressure;
The cluster type substrate processing apparatus, wherein the second pump is disposed near a second end of the processing container, or
As described in claim 51,
A silicon substrate,
A semiconductor device comprising: an insulating film having a thickness of 2 to 4 atomic layers formed on the silicon substrate; or
As described in claim 52,
52. The semiconductor device according to claim 51, wherein the insulating film has a uniform thickness in a range of 2 to 4 atomic layers.
As described in claim 53,
53. The semiconductor device according to claim 51, wherein the insulating film is made of a silicon oxide film.
As described in claim 54,
53. The semiconductor device according to claim 51, wherein the insulating film is made of a silicon oxynitride film.
As described in claim 55,
The semiconductor according to any one of claims 51 to 54, further comprising a high dielectric film formed on the insulating film, and a gate electrode formed on the high dielectric film. By device or
As described in claim 56,
A silicon substrate,
In a semiconductor device comprising an insulating film formed on the silicon substrate,
A semiconductor device, wherein the insulating film is formed by nitriding an oxide film having a thickness of 1 to 4 atomic layers formed on a silicon substrate, or
As described in claim 57,
133-133 × 10 on the silicon substrate surface^-4a substrate treatment method characterized by forming an oxide film by oxidation treatment using oxygen radicals having a partial pressure in the range of mPa, or
As described in claim 58,
58. The method of claim 57, wherein the duration of the oxidation step is about 5 minutes or less.
As described in claim 59,
In the oxidation treatment step, in the presence of ultraviolet excited oxygen radicals, the power of ultraviolet light having a wavelength of 172 nm is increased to 5 to 50 mW / cm in a region immediately below the ultraviolet light source.²The method is performed by setting the oxygen partial pressure in a range of 133 mPa to 133 Pa, or by the substrate processing method according to claim 57 or 58, or
As described in claim 60,
Forming a base oxide film on the silicon substrate surface;
Forming a high dielectric film on the base oxide film;
Forming a gate electrode layer on the high dielectric film.
The step of forming the base oxide film includes a step of forming a partial pressure of 133 to 133 × 10 on the surface of the silicon substrate.^-4a method for manufacturing a semiconductor device, comprising a step of forming an oxide film by an oxidation treatment using an oxygen radical having a concentration in a range of mPa; or
As described in claim 61,
61. The method of claim 60, wherein a duration of the oxidation process is about 5 minutes or less.
As described in claim 62,
In the oxidation treatment step, in the presence of ultraviolet excited oxygen radicals, the power of ultraviolet light having a wavelength of 172 nm is increased by 5 to 50 mW / cm in a region immediately below the ultraviolet light source.²63. The method according to claim 60, wherein the step is performed by setting the oxygen partial pressure to a range of 133 mPa to 133 Pa.
As described in claim 63,
Supplying a NO gas to the silicon substrate surface;
A step of exciting the NO gas by ultraviolet light, and forming an oxynitride film on the surface of the silicon substrate.
As described in claim 64,
64. The method of claim 63, wherein the ultraviolet light has a wavelength of about 172 nm, or
As described in claim 65,
65. The substrate processing method according to claim 63 or 64, wherein the ultraviolet light is formed by a dielectric barrier discharge tube enclosing xenon, or
As described in claim 66,
64. The method of claim 63, wherein the oxynitride film is formed to a thickness of about 0.5 nm.
As described in claim 67,
64. The method of claim 63, wherein forming the oxynitride film is performed at a substrate temperature of about 450 <0> C.
As described in claim 68,
68. The substrate processing method according to claim 63, wherein the step of forming the nitride film is performed for 200 seconds or less.
As described in claim 69,
The step of forming the oxynitride film is performed at 1.33 to 1.33 × 10³The substrate processing method according to any one of claims 63 to 68, which is performed at a processing pressure in a range of Pa, or
As described in claim 70,
The substrate supply method according to any one of claims 63 to 69, wherein the step of supplying the NO gas is started before starting the temperature rise of the silicon substrate, or
As described in claim 71,
71. The substrate processing method according to any one of claims 63 to 70, wherein, prior to the oxynitride film forming step, a step of removing a natural oxide film on the surface of the silicon substrate is performed.
As described in claim 72,
Supplying NO gas to the silicon substrate surface and exciting the NO gas with ultraviolet light to form an oxynitride film on the silicon substrate surface;
Forming a high dielectric film on the oxynitride film;
Forming a gate electrode on the high dielectric film, a method of manufacturing a semiconductor device, or
As described in claim 73,
73. The method according to claim 72, wherein the ultraviolet light has a wavelength of 172 nm.
[0037]
BEST MODE FOR CARRYING OUT THE INVENTION
[First embodiment]
FIG. 3 shows a schematic configuration of a substrate processing apparatus 20 according to the first embodiment of the present invention for forming an extremely thin base oxide film 2 including an oxynitride film 2A on the silicon substrate 1 of FIG. Show.
[0038]
Referring to FIG. 3, the substrate processing apparatus 20 houses a substrate holding table 22 provided with a heater 22 </ b> A and provided to be vertically movable between a process position and a substrate loading / unloading position. The apparatus includes a processing vessel 21 defining a process space 21B, and the substrate holding table 22 is rotated by a driving mechanism 22C. The inner wall surface of the processing vessel 21 is covered with an inner liner 21G made of quartz glass, thereby preventing metal contamination of the substrate to be processed from the exposed metal surface by 1 × 10 2.¹⁰Atom / cm²It has been suppressed to the following levels.
[0039]
A magnetic seal 28 is formed at the joint between the substrate holding table 22 and the driving mechanism 22C. The magnetic seal 28 connects the magnetic sealing chamber 22B held in a vacuum environment and the driving mechanism 22C formed in the atmospheric environment. Are separated. Since the magnetic seal 28 is a liquid, the substrate holder 22 is rotatably held.
[0040]
In the illustrated state, the substrate holding table 22 is at the process position, and a loading / unloading chamber 21C for loading / unloading the substrate to be processed is formed below. The processing container 21 is connected to the substrate transfer unit 27 via a gate valve 27A. When the substrate holding table 22 is lowered during loading / unloading 21C, the processing container 21 is connected to the substrate transfer unit 27 via the gate valve 27A. The substrate W to be processed is transported onto the substrate holder 22, and the processed substrate W is transported from the substrate holder 22 to the substrate transport unit 27.
[0041]
In the substrate processing apparatus 20 of FIG. 3, an exhaust port 21A is formed in a portion of the processing container 21 near the gate valve 27A, and the exhaust port 21A is provided via a valve 23A and an APC (automatic pressure control device) 24B. The turbo molecular pump 23B is connected. The turbo molecular pump 23B is further connected with a pump 24 configured by combining a dry pump and a mechanical booster pump via a valve 23C. By driving the turbo molecular pump 23B and the dry pump 24, the turbo molecular pump 23B The pressure in the process space 21B is 1.33 × 10^-1~ 1.33 × 10^-4Pa (10^-3-10^-6Torr)
On the other hand, the exhaust port 21A is also directly connected to the pump 24 via the valve 24A and the APC 24B. When the valve 24A is opened, the process space is reduced to 1.33 to 1.33 kPa by the pump 24. (0.01 to 10 Torr).
[0042]
The processing vessel 21 is provided with a processing gas supply nozzle 21D to which oxygen gas is supplied on a side facing the exhaust port 21A across the substrate W to be processed, and is supplied to the processing gas supply nozzle 21D. The oxygen gas flows in the process space 21B along the surface of the substrate W to be processed, and is exhausted from the exhaust port 21A.
[0043]
As described above, in order to activate the processing gas supplied from the processing gas supply nozzle 21D to generate oxygen radicals, the substrate processing apparatus 20 shown in FIG. An ultraviolet light source 25 having a quartz window 25A is provided corresponding to a region between the two. That is, by driving the ultraviolet light source 25, the oxygen gas introduced from the processing gas supply nozzle 21D into the process space 21B is activated, and the oxygen radicals formed as a result flow along the surface of the substrate W to be processed. . This makes it possible to form a radical oxide film having a thickness of 1 nm or less, particularly a thickness of about 0.4 nm corresponding to a thickness of 2 to 3 atomic layers, on the surface of the substrate W to be processed. Become.
[0044]
Further, a remote plasma source 26 is formed in the processing container 21 on the side of the substrate W facing the exhaust port 21A. Therefore, a nitrogen radical can be formed by supplying a nitrogen gas together with an inert gas such as Ar to the remote plasma source 26 and activating the nitrogen gas with the plasma. The nitrogen radicals thus formed flow along the surface of the substrate W to be processed, and nitride the substrate surface. Note that the substrate surface can be oxidized by introducing oxygen instead of nitrogen into the remote plasma source 26.
[0045]
In the substrate processing apparatus 20 of FIG. 3, a purge line 21c for purging the loading / unloading chamber 21C with nitrogen gas is further provided, and a purge line 22b for purging the magnetic seal chamber 22B with nitrogen gas and an exhaust line 22c thereof are provided. Is provided.
[0046]
More specifically, a turbo-molecular pump 29B is connected to the exhaust line 22c via a valve 29A, and the turbo-molecular pump 29B is connected to the pump 24 via a valve 29C. Further, the exhaust line 22c is directly connected to the pump 24 via a valve 29D, so that the magnetic seal chamber 22B can be maintained at various pressures.
[0047]
The loading / unloading chamber 21C is exhausted by a pump 24 via a valve 24C or exhausted by a turbo molecular pump 23B via a valve 23D. In order to avoid the occurrence of contamination in the process space 21B, the loading / unloading chamber 21C is maintained at a lower pressure than the process space 21B, and the magnetic sealing chamber 22B is differentially evacuated so that the loading / unloading is performed. The pressure is kept lower than that of the discharge chamber 21C.
[0048]
Hereinafter, the ultraviolet radical oxidation treatment of the surface of the substrate W to be processed performed by using the substrate processing apparatus 20 of FIG. 3 and the remote plasma radical nitridation treatment performed thereafter will be described.
Ultraviolet radical oxidation (UV-O ₂ )processing
FIGS. 4A and 4B are a side view and a plan view, respectively, showing a case where the substrate W to be processed is subjected to radical oxidation using the substrate processing apparatus 20 of FIG.
[0049]
Referring to FIG. 4A, an oxygen gas is supplied into the process space 21B from a processing gas supply nozzle 21D, flows along the surface of the substrate W to be processed, and then exhaust ports 21A, APCs 23D, turbo molecules. Air is exhausted through the pump 23B and the pump 24. By using the turbo molecular pump 23B and the APC 23D, the ultimate vacuum degree of the process space 21B can be reduced to a value required for oxidation of the substrate W by oxygen radicals.^-3-10^-6It is set in the range of Torr.
[0050]
At the same time, by driving the ultraviolet light source 25, which preferably generates ultraviolet light having a wavelength of 172 nm, oxygen radicals are formed in the oxygen gas flow thus formed. The formed oxygen radicals oxidize the rotating substrate surface when flowing along the surface of the substrate W to be processed. Oxidation (hereinafter referred to as UV-O) of the substrate W to be processed by ultraviolet light excited oxygen radicals.₂Processing), a very thin oxide film having a thickness of 1 nm or less, particularly an oxide film having a thickness of about 0.4 nm corresponding to a few atomic layers, can be stably formed with good reproducibility on the surface of the silicon substrate. Will be possible.
[0051]
FIG. 4B is a plan view of the configuration of FIG.
[0052]
Referring to FIG. 4B, the ultraviolet light source 25 is a tubular light source extending in a direction intersecting the direction of the oxygen gas flow, and the turbo molecular pump 23B exhausts the process space 21B through the exhaust port 21A. I understand. On the other hand, the exhaust path directly from the exhaust port 21A to the pump 24 and shown by a dotted line in FIG. 4B is shut off by closing the valve 24A.
[0053]
As can be seen from the plan view of FIG. 4B, the turbo molecular pump 23B is arranged so as to protrude to the side of the processing container 21, avoiding the substrate transfer unit 27.
[0054]
FIG. 5 shows a substrate processing apparatus 20 shown in FIG. 3, in which a silicon oxide film is formed on the surface of the silicon substrate by the steps shown in FIGS. Alternatively, it shows the relationship between the film thickness and the oxidation time when formed while changing the oxygen partial pressure in various ways. However, in the experiment of FIG. 5, the natural oxide film on the silicon substrate surface was removed prior to radical oxidation, and in some cases, carbon remaining on the substrate surface was removed in ultraviolet-excited nitrogen radicals. The substrate surface is flattened by performing the high-temperature heat treatment in. An excimer lamp having a wavelength of 172 nm was used as the ultraviolet light source 24B.
[0055]
Referring to FIG. 5, the data of series 1 indicates that the ultraviolet light irradiation power is set to the reference power (50 mW / cm) at the window surface of the ultraviolet light source 24B.²) Is set to 5%, the process pressure is set to 665 mPa (5 mTorr), and the oxygen gas flow rate is set to 30 SCCM. The relationship between the oxidation time and the oxide film thickness is shown. 4 shows the relationship between the oxidation time and the oxide film thickness when the process pressure is set to 133 Pa (1 Torr) and the oxygen gas flow rate is set to 3 SLM.
[0056]
The data in series 3 shows the relationship between the oxidation time and the oxide film thickness when the ultraviolet light power was set to zero, the process pressure was set to 2.66 Pa (20 mTorr), and the oxygen gas flow rate was set to 150 SCCM. The data shows the relationship between the oxidation time and the oxide film thickness when the ultraviolet light irradiation power is set to 100%, that is, the reference power, the process pressure is set to 2.66 Pa (20 mTorr), and the oxygen gas flow rate is set to 150 SCCM.
[0057]
Further, the data of series 5 shows the relationship between the oxidation time and the oxide film pressure when the ultraviolet light irradiation power is set to 20% of the reference power, the process pressure is set to 2.66 Pa (20 mTorr), and the oxygen gas flow rate is set to 150 SCCM. The data in series 6 shows the oxidation time and oxidation when the ultraviolet light irradiation power was set to 20% of the reference irradiation power, the process pressure was set to about 67 Pa (0.5 Torr), and the oxygen gas flow rate was set to 0.5 SLM. The relationship with the film thickness is shown.
[0058]
Further, the data in series 7 shows the relationship between the oxidation time and the oxide film thickness when the ultraviolet light irradiation power is set to 20% of the reference power, the process pressure is set to 665 Pa (5 Torr), and the oxygen gas flow rate is set to 2 SLM. The data in series 8 show the relationship between the oxidation time and the oxide film thickness when the ultraviolet light irradiation power is set to 5% of the reference power, the process pressure is set to 2.66 Pa (20 mTorr), and the oxygen gas flow rate is set to 150 SCCM. Is shown.
[0059]
In the experiment of FIG. 5, the thickness of the oxide film is obtained by the XPS method, but there is no unified method for obtaining the thickness of the oxide film which is extremely thin below 1 nm.
[0060]
Therefore, the inventor of the present invention has been observing the observed Si shown in FIG._2pThe background correction and the separation correction of the 3/2 and 1/2 spin states were performed on the orbital XPS spectrum, and the resulting Si shown in FIG. 7 was obtained._2p ^3/2Based on the XPS spectrum, using the equation and coefficients shown in Equation (1) according to the teachings of Lu et al. (Z. H. Lu, et al., Appl. Phys, Let. Thus, the thickness d of the oxide film was obtained.
d = λ sin α · ln [I^{X +}/ (ΒI⁰⁺) +1] (1)
λ = 2.96
β = 0.75
However, in Expression (1), α is the detection angle of the XPS spectrum shown in FIG. 6, and is set to 30 ° in the illustrated example. Also, in Equation 1, I^{X +}Is the integrated intensity of the spectral peak corresponding to the oxide film (I¹⁺+ I²⁺+ I³⁺+ I⁴⁺), And corresponds to the peak seen in the energy region of 102 to 104 eV in FIG. On the other hand, I⁰⁺Corresponds to the integrated intensity of the spectrum peak due to the silicon substrate corresponding to the energy region near 100 eV.
[0061]
Referring again to FIG. 5, when the ultraviolet light irradiation power, and thus the oxygen radical density formed is small (series 1, 2, 3, 8), the oxide film thickness of the oxide film was initially 0 nm. However, while the oxide film thickness gradually increases with the oxidation time, in the series 4, 5, 6, and 7 in which the ultraviolet light irradiation power is set to 20% or more of the reference power, as schematically shown in FIG. It is observed that the oxide film growth stops after reaching a film thickness of about 0.4 nm after the start of growth, and the growth is rapidly restarted after a certain stop time has elapsed.
[0062]
The relationship shown in FIG. 5 or FIG. 8 means that an extremely thin oxide film having a thickness of about 0.4 nm can be formed stably in the oxidation treatment of the silicon substrate surface. In addition, as shown in FIG. 5, since the dwell time continues to some extent, it can be seen that the formed oxide film has a uniform thickness. That is, according to the present invention, an oxide film having a thickness of about 0.4 nm can be formed on a silicon substrate to a uniform thickness.
[0063]
FIGS. 9A and 9B schematically show a process of forming a thin oxide film on such a silicon substrate. It should be noted that in these figures, the structure on the silicon (100) substrate is greatly simplified.
[0064]
Referring to FIG. 9A, two oxygen atoms are bonded to one silicon atom on the surface of the silicon substrate to form an oxygen layer of one atomic layer. In this typical state, the silicon atoms on the substrate surface are coordinated by two silicon atoms inside the substrate and two oxygen atoms on the substrate surface to form a suboxide.
[0065]
On the other hand, in the state of FIG. 9B, the silicon atom at the top of the silicon substrate is coordinated by four oxygen atoms, and stable silicon⁴⁺Take the state of. For this reason, it is considered that oxidation progresses rapidly in the state of FIG. 9A, and the oxidation stops in the state of FIG. 9B. The thickness of the oxide film in the state of FIG. 9B is about 0.4 nm, which is in good agreement with the oxide film thickness in the stationary state observed in FIG.
[0066]
In the XPS spectrum of FIG. 7, when the oxide film thickness is 0.1 nm or 0.2 nm, a low peak observed in the energy range of 101 to 104 eV corresponds to the suboxide of FIG. 0.3 nm, the peak appearing in this energy region is Si⁴⁺This is considered to indicate the formation of an oxide film exceeding one atomic layer.
[0067]
FIG. 75 (A) shows the raw XPS spectrum of a silicon oxide film formed on a silicon substrate and its chemical shift, while FIG. 75 (B) shows the XPS film thickness of the silicon oxide film, that is, obtained by XPS analysis. 74 shows the relationship between the film thickness and the chemical shift in FIG.
[0068]
Referring to FIGS. 75 (A) and (B), as the value of the XPS film thickness increases, the magnitude of the chemical shift also increases. When the XPS film thickness reaches between 0.3 nm and 0.4 nm, the chemical shift increases. It can be seen that the value of the shift reaches 4 eV, which is the original value of the silicon oxide film, at which point the chemical shift begins to saturate. As described above, the thickness of such an extremely thin oxide film may vary depending on the difference in the measuring device or the value of the constant λ or β used in the above equation (1). Therefore, the film thickness of 0.4 nm described above in the present invention is defined as the minimum non-stationary film thickness at which the chemical shift of the oxide film becomes about 4 eV from the relationship between FIGS. 75 (A) and 75 (B). Is also possible.
[0069]
Such a stationary phenomenon of the oxide film thickness at a film thickness of 0.4 nm is caused by the UV-O in FIGS. 4A and 4B.₂The present invention is not limited to the radical oxidation process, and it is considered that a similar method can be used if an oxide film forming method capable of forming a thin oxide film with high accuracy.
[0070]
When the oxidation is further continued from the state of FIG. 9B, the thickness of the oxide film increases again.
[0071]
FIG. 10 shows the UV-O of FIGS. 4A and 4B using the substrate processing apparatus of FIG.₂0.4 nm thick ZrSiO on oxide film formed by oxidation process_xA film and an electrode film are formed (see FIG. 11B described later), and a relationship between a thermal oxide film equivalent thickness Teq and a leak current Ig obtained for the obtained laminated structure is shown. However, the leak current characteristic in FIG. 10 is measured in a state where a voltage of Vfb-0.8 V is applied between the electrode film and the silicon substrate with reference to the flat band voltage Vfb. For comparison, FIG. 10 also shows the leakage current characteristics of the thermal oxide film. The converted film thicknesses shown in the figure are the oxide film and the ZrSiO_xIt is about the structure which combined the film.
[0072]
Referring to FIG. 10, when the oxide film is omitted, that is, when the thickness of the oxide film is 0 nm, the leak current density exceeds the leak current density of the thermal oxide film. Is also a relatively large value of about 1.7 nm.
[0073]
On the other hand, when the thickness of the oxide film is increased from 0 nm to 0.4 nm, the value of the thermal oxide film equivalent thickness Teq starts to decrease. In such a state, the oxide film is made of a silicon substrate and ZrSiO._xAlthough the physical film thickness is supposed to actually increase, the reduced film thickness Teq is reduced._xWhen the film is formed directly, as shown in FIG. 11A, Zr is diffused into a silicon substrate or ZrSiO_xDiffusion into the film occurs on a large scale, and the silicon substrate and ZrSiO_xThis suggests that a thick interfacial layer has been formed between the film and the film. On the other hand, by interposing an oxide film having a thickness of 0.4 nm as shown in FIG. 11B, the formation of such an interface layer is suppressed, and as a result, the reduced film thickness is considered to be reduced. Can be Accordingly, it can be seen that the value of the leak current decreases with the thickness of the oxide film. 11 (A) and 11 (B) show schematic cross sections of the sample thus formed. An oxide film 42 is formed on a silicon substrate 41, and ZrSiO 2 is formed on the oxide film 42._xThe structure in which the film 43 is formed is shown.
[0074]
On the other hand, when the thickness of the oxide film exceeds 0.4 nm, the value of the thermal oxide film equivalent thickness starts to increase again. In the range where the thickness of the oxide film exceeds 0.4 nm, the value of the leak current decreases with the increase in the film thickness. The increase in the converted film thickness is due to the increase in the physical film thickness of the oxide film. It is believed that there is.
[0075]
As described above, the film thickness in the vicinity of 0.4 nm at which the growth of the oxide film stops observed in FIG. 5 corresponds to the minimum value of the reduced film thickness of the system including the oxide film and the high dielectric film, The diffusion of the metal element such as Zr into the silicon substrate is effectively prevented by the stable oxide film shown in FIG. 9B, and even if the thickness of the oxide film is further increased, It can be seen that the diffusion inhibiting effect of is not so high.
[0076]
Furthermore, the value of the leak current when using an oxide film having a thickness of 0.4 nm is about two orders of magnitude smaller than the value of the leak current of the corresponding thermal oxide film. It can be seen that the gate leakage current can be minimized by using the gate insulating film.
[0077]
Further, as a result of the stopping phenomenon at 0.4 nm of the oxide film growth described with reference to FIG. 5 or FIG. 8, as shown in FIG. Even if there are irregularities, the increase in the film thickness during the oxide film growth stops at around 0.4 nm as shown in FIG. 12B, so that the oxide film growth is continued during the stop period. An oxide film 42 having a very flat and uniform thickness as shown in FIG.
[0078]
As described above, there is no unified thickness measurement method at present for an extremely thin oxide film. Therefore, the thickness value of the oxide film 42 in FIG. 12C may be different depending on the measurement method. However, for the reasons explained above, it has been found that the thickness at which oxide film growth stops is the thickness of two atomic layers, and therefore, the preferred thickness of the oxide film 42 is about two atomic layers. Is considered to be a minute thick. This preferable thickness includes a case where a region having a thickness of three atomic layers is formed partially so as to secure a thickness of two atomic layers over the entire oxide film 42. That is, it is considered that the preferable thickness of the oxide film 42 is actually in the range of 2 to 3 atomic layers.
Remote plasma radical nitriding (RF-N ₂ )processing
FIG. 13 shows a configuration of a remote plasma source 26 used in the substrate processing apparatus 20 of FIG.
[0079]
Referring to FIG. 13, the remote plasma source 26 includes a block 26A, typically made of aluminum, in which a gas circulation passage 26a and a gas inlet 26b and a gas outlet 26c communicating with the gas circulation passage 26a are formed. A ferrite core 26B is formed in a part of 26A.
[0080]
The inner surfaces of the gas circulation passage 26a, the gas inlet 26b, and the gas outlet 26c are coated with a fluororesin coating 26d to supply high frequency (RF) power having a frequency of 400 kHz to the coil wound around the ferrite core 26B. Thus, a plasma 26C is formed in the gas circulation passage 26a.
[0081]
With the excitation of the plasma 26C, nitrogen radicals and nitrogen ions are formed in the gas circulation passage 26a. However, the nitrogen ions having strong linearity disappear when circulating in the circulation passage 26a, and the gas outlet 26c From the nitrogen radical N₂* Is released. Further, in the configuration of FIG. 13, by providing an ion filter 26e grounded to the gas outlet 26c, charged particles including nitrogen ions are removed, and only nitrogen radicals are supplied to the processing space 21B. Further, even when the ion filter 26e is not grounded, the structure of the ion filter 26e functions as a diffusion plate, so that charged particles including nitrogen ions can be sufficiently removed. Note that a large amount of N₂When performing a process that requires radicals, the N₂The ion filter 26e may be removed in order to prevent the radical filter from disappearing due to radical collision.
[0082]
FIG. 14A shows the relationship between the number of ions formed by the remote plasma source 26 in FIG. 13 and the electron energy, using the standard high-frequency plasma source shown in FIG. 14B and the standard shown in FIG. This is shown in comparison with a typical microwave plasma source.
[0083]
Referring to FIG. 14A, when plasma is excited by microwaves, ionization of nitrogen molecules is promoted and a large amount of nitrogen ions are formed. On the other hand, when the plasma is excited by a high frequency (RF) power of 500 kHz or less, the number of formed nitrogen ions is greatly reduced.
[0084]
However, in the case of high-frequency plasma, the ratio of ions having a high electron energy becomes large, so that there is a disadvantage that the substrate is damaged. However, with the configuration as shown in FIG. 13, the nitrogen ions having strong straightness disappear in the gas circulation passage 26a, and₂Only radicals can be selectively introduced into the processing vessel.
[0085]
As described above, FIGS. 14B and 14C show the configurations of a standard high-frequency plasma source and a standard microwave plasma source, respectively.
[0086]
Referring to FIG. 14B, a process gas is introduced into a plasma chamber 426D covered with a quartz liner 426d from an upper gas inlet 426b, and the process gas is excited at a high frequency to generate a plasma in the plasma chamber 426D. 426C is formed.
[0087]
Nitrogen ions and nitrogen radicals formed with the plasma 426C are introduced into a lower processing chamber, and plasma nitridation is performed. However, in the plasma source having such a configuration, it is difficult to completely remove the nitrogen ions having strong linearity even if the trap 426c is provided.
[0088]
The microwave plasma source of FIG. 14C is the same, except that the microwave is used for plasma excitation. Therefore, even in the microwave plasma source of FIG. 14C, it is difficult to separate nitrogen ions having strong linearity from radicals and remove them even if a trap is provided.
[0089]
As described above, by using the radical source shown in FIG. 13, an ion distribution shown by a dotted line in FIG. 14A is obtained, and ideal remote plasma nitriding with a reduced number of ions can be performed.
[0090]
In the case of performing the plasma processing by microwave, 1.33 × 10 3 as shown in FIG.^-3~ 1.33 × 10^-6Pa (10^-1-10^-4Although high vacuum of Torr is required, high frequency plasma processing can be performed at a relatively high pressure of 13.3 Pa to 1.33 kPa (0.1 to 10 Torr).
[0091]
Next, a plasma excitation frequency and a process pressure suitable for the remote plasma process will be considered.
[0092]
FIG. 73 shows the relationship between the plasma excitation frequency and the plasma ignition pressure range.
[0093]
Referring to FIG. 73, the plasma ignition pressure range changes depending on the plasma excitation frequency used. For example, when the plasma excitation frequency is 400 kHz, the plasma ignition pressure range is 1.33 to 1.33 kPa (0.01 to 10 Torr). It can be seen that when the excitation frequency is 2.45 GHz, the range is 13.3 mPa to 1.33 kPa (0.1 mTorr to 0.01 Torr).
[0094]
Here, considering the preferable process pressure, if the process pressure is too low, the nitrogen radicals introduced into the processing vessel diffuse, and for example, even if the substrate W is rotated in the substrate processing apparatus 20 of FIG. Non-uniformity occurs in the nitridation process, for example, only the near substrate periphery is nitrided. For this reason, when the remote radical source 26 shown in FIG. 13 is used in the substrate processing apparatus 20 shown in FIG. 3, it is necessary to control the radical flow to some extent in order to perform a uniform nitriding process. The processing pressure in the container 21 needs to be controlled to a value equal to or higher than 0.01 Torr (1.33 Pa) indicated by the line A in FIG. On the other hand, if the processing pressure in the processing container 21 is too high, the nitrogen radicals will be extinguished by collision, so that the processing pressure in the processing container 21 is a value of 3 Torr (399 Pa) or less shown by the line B in FIG. Need to be controlled.
[0095]
Next, considering a preferable plasma excitation frequency, when the plasma excitation frequency is lower than 4 kHz shown by the line C, ions are greatly accelerated, and damage of the substrate by high energy ions is increased. Therefore, the plasma excitation frequency is set to 4 kHz or more. Is preferred. On the other hand, if the plasma excitation frequency exceeds 13.56 MHz indicated by line D in FIG. 73, it becomes difficult to perform plasma processing at a large flow rate. Therefore, it is preferable to set the plasma excitation frequency so as not to exceed 13.56 MHz.
[0096]
As a result, in the radical nitriding process performed by using the radical source 26 of FIG. 13 in the substrate processing apparatus 20 of FIG. 3, the process pressure and the frequency are indicated by hatched regions defined by lines A to D in FIG. It is preferable to set within. In the present invention, a frequency of about 400 kHz is used as a typical plasma excitation frequency, which includes the above range. Particularly in the range of 40 kHz to 4 MHz, substantially the same plasma process can be realized.
[0097]
Table 1 below shows ionization energy conversion efficiency, dischargeable pressure range, plasma power consumption, and process gas flow rate between the case where plasma is excited by microwaves and the case where plasma is excited by radio frequency (RF) power. 2 shows a comparison.
[0098]
[Table 1]

Referring to Table 1, the ionization energy conversion efficiency was about 1 × 10 for microwave excitation.^-2In the case of RF excitation, about 1 × 10^-7The dischargeable pressure is about 0.1 mTorr to 0.1 Torr (133 mPa to 13.3 Pa) in the case of microwave excitation, whereas the dischargeable pressure is about 0.1 to 100 Torr ( It can be seen that the pressure is about 13.3 Pa to 13.3 kPa). Accordingly, the plasma power consumption is larger in the case of RF excitation than in the case of microwave excitation, and the process gas flow rate is much larger in the case of RF excitation than in the case of microwave excitation.
[0099]
In the substrate processing apparatus of FIG. 3, the nitridation of the oxide film is performed not by nitrogen ions but by nitrogen radicals N.₂*, And it is therefore preferable that the number of nitrogen ions to be excited is small. Also, from the viewpoint of minimizing damage to the substrate to be processed, it is preferable that the number of excited nitrogen ions is small. Further, in the substrate processing apparatus of FIG. 3, the number of nitrogen radicals to be excited is small, and a very thin base oxide film having a thickness of at most about 2 to 3 atomic layers under the high dielectric gate insulating film is nitrided. It is suitable for. The nitridation of an oxide film using such high-frequency plasma-excited nitrogen radicals will be described below by RF-N₂Called processing.
[0100]
As described above, by using the remote plasma radical source 26 in FIG. 13, a large flow rate of process gas can be introduced into the processing vessel 21 in the substrate processing apparatus 20 in FIG. RF-N like₂As a result of the treatment, an excellent nitriding treatment with a uniform nitrogen concentration distribution on the substrate surface can be performed.
[0101]
When the flow rate of the process gas is increased, the region to be nitrided is different from the case where the flow rate of the process gas is small, and is limited to a region near the central axis of the substrate connecting the plasma source 26 and the exhaust port 21A in FIG. By controlling the process gas flow rate that is the sum of the gas flow rates, the amount of extension of the nitriding region on the substrate in the direction of the exhaust port 21A can be adjusted. Therefore, by rotating the substrate W after optimizing the extension amount, the uniformity of the nitrogen concentration on the substrate surface is improved. In addition, in the configuration of FIG. 3, the effect that the life of nitrogen radicals is prolonged by adding Ar gas to nitrogen gas is also considered, and the addition of Ar gas is performed by the RF-N of the present invention.₂There is a possibility that the in-plane uniformity in the processing is improved.
[0102]
Also, in nitriding using microwave plasma, if nitriding with a large gas flow rate is possible, it is possible to achieve in-plane uniformity similar to that achieved by remote plasma nitriding. There is.
[0103]
FIGS. 16A and 16B show radical nitriding (RF-N) of a substrate W to be processed using the substrate processing apparatus 20 of FIG.₂(Processing)) is a side view and a plan view showing the case of performing (processing).
[0104]
Referring to FIGS. 16A and 16B, an Ar gas and a nitrogen gas are supplied to the remote plasma radical source 26, and nitrogen radicals are formed by exciting the plasma at a high frequency of several hundred kHz. The formed nitrogen radicals flow along the surface of the target substrate W and are exhausted through the exhaust port 21A and the pump 24. As a result, the process space 21B is set to a process pressure in a range of 1.33 Pa to 1.33 kPa (0.01 to 10 Torr) suitable for radical nitridation of the substrate W. In particular, it is preferable to use a pressure range of 6.65 to 133 Pa (0.05 to 1.0 Torr). The nitrogen radicals thus formed, when flowing along the surface of the target substrate W, nitridate the surface of the target substrate W.
[0105]
In the nitriding process of FIGS. 16A and 16B, in the purging process prior to the nitriding process, the valves 23A and 23C are opened and the valve 24A is closed, so that the pressure in the processing space 21B is 1.33 × 10 3.^-1~ 1.33 × 10^-4The pressure is reduced to a pressure of Pa, and oxygen and moisture remaining in the processing space 21B are purged. However, in the subsequent nitriding process, the valves 23A and 23C are closed, and the turbo molecular pump 23B is connected to the exhaust path of the process space 21B. Is not included.
[0106]
As described above, by using the substrate processing apparatus 20 of FIG. 3, it is possible to form an extremely thin oxide film on the surface of the substrate W to be processed, and to further nitride the oxide film surface.
[0107]
FIG. 17A shows an oxide film formed on a silicon substrate to a thickness of 2.0 nm by a thermal oxidation process using the substrate processing apparatus 20 shown in FIG. 3 by using the RF remote plasma source 26 shown in FIG. RF-N under the conditions shown in 2₂FIG. 17B shows a nitrogen concentration distribution in the oxide film when the processing is performed, and FIG. 17B shows a relationship between the nitrogen concentration distribution and the oxygen concentration distribution in the same oxide film.
[0108]
[Table 2]

Referring to Table 2, RF-N using the substrate processing apparatus 20 was used.₂During the processing, nitrogen is supplied into the processing space 21B at a flow rate of 50 SCCM and Ar is supplied at a flow rate of 2 SLM, and the nitriding treatment is performed under a pressure of 1 Torr (133 Pa). The internal pressure of the processing space 21B is set to 10^-6Torr (1.33 × 10^-4The pressure is reduced to about Pa), and oxygen or moisture remaining inside is sufficiently purged. Therefore, the nitriding treatment (RF-N₂During the treatment, the residual oxygen is diluted with Ar and nitrogen in the treatment space 21B, and the concentration of the residual oxygen, and therefore, the thermodynamic activity of the residual oxygen is very small.
[0109]
On the other hand, in the nitriding treatment using microwave plasma, the treatment pressure during the nitridation treatment is almost the same as the purge pressure, and therefore, it is considered that the residual oxygen has high thermodynamic activity in the plasma atmosphere. Can be
[0110]
Referring to FIG. 17A, when nitriding is performed by microwave excitation plasma, the concentration of nitrogen introduced into the oxide film is limited, and nitridation of the oxide film does not substantially proceed. Understand. On the other hand, when nitriding by RF excitation plasma as in the present embodiment, it can be seen that the nitrogen concentration in the oxide film changes linearly with the depth, reaching nearly 20% near the surface.
[0111]
FIG. 18 illustrates the principle of the measurement in FIG. 17A performed using XPS (X-ray spectroscopy).
[0112]
As shown in FIG. 18, a sample in which an oxide film 12 is formed on a silicon substrate 11 is irradiated with X-rays obliquely at a predetermined angle, and the excited X-ray spectra are detected by detectors DET1 and DET2. Detect by angle. At this time, for example, in the detector DET1 set at a deep detection angle of 90 °, the path of the excited X-rays in the oxide film 12 is short, so that the X-ray spectrum detected by the detector DET1 has a lower portion under the oxide film 12. In the detector DET2 set at a shallow detection angle, the path of the excited X-rays in the oxide film 12 is long, and therefore, the detector DET2 mainly includes information near the surface of the oxide film 12. Is detected.
[0113]
FIG. 17B shows the relationship between the nitrogen concentration and the oxygen concentration in the oxide film. However, in FIG. 17B, the oxygen concentration is O_1sIt is represented by the X-ray intensity corresponding to the orbit.
[0114]
Referring to FIG. 17 (B), the nitriding of the oxide film is performed by using the RF-N₂In the case of performing the treatment, the oxygen concentration decreases with an increase in the nitrogen concentration, and it can be seen that the nitrogen atoms replace the oxygen atoms in the oxide film. On the other hand, when the nitriding of the oxide film is performed by microwave plasma, such a substitution relationship is not seen, and a relationship in which the oxygen concentration decreases with the nitrogen concentration is not seen. In particular, in FIG. 17B, an increase in the oxygen concentration is observed in the example in which 5 to 6% of nitrogen is introduced by microwave nitridation, which suggests that the oxide film increases with nitridation. are doing. Such an increase in oxygen concentration due to microwave nitridation is caused by the fact that microwave nitridation is performed in a high vacuum, so that oxygen or moisture remaining in the processing space is reduced by Ar gas or nitrogen gas as in high-frequency remote plasma nitridation. This is considered to be due to having high activity in the atmosphere without being diluted.
[0115]
FIG. 19 shows an example in which an oxide film is formed to a thickness of 4 ° (0.4 nm) and 7 ° (0.7 nm) in the substrate processing apparatus 20 of FIG. 3 and is formed by using the remote plasma source 26 in FIG. , (B) RF-N₂The relationship between the nitriding time and the nitrogen concentration in the film when nitriding by the treatment is shown. FIG. 20 shows the segregation of nitrogen on the oxide film surface due to the nitriding treatment of FIG. 19 and 20 also show the case where the oxide film is formed to a thickness of 5 ° (0.5 nm) and 7 ° (0.7 nm) by rapid thermal oxidation.
[0116]
Referring to FIG. 19, the nitrogen concentration in the film increases with the nitriding treatment time for any oxide film.₂In the case of an oxide film having a thickness of 0.4 nm corresponding to two atomic layers formed by oxidation, or in the case of a thermal oxide film having a thickness of 0.5 nm close thereto, the oxide film is thin. Therefore, the nitrogen concentration increases under the same film forming conditions.
[0117]
FIG. 20 shows the results of detecting the nitrogen concentration by setting the detectors DET1 and DET2 to the detection angles of 30 ° and 90 ° in FIG. 18, respectively.
[0118]
As can be seen from FIG. 20, the vertical axis in FIG. 20 shows that the X-ray spectrum intensity from the nitrogen atoms segregated on the film surface obtained at the detection angle of 30 ° is dispersed over the entire film obtained at the detection angle of 90 °. It is obtained by dividing by the value of the X-ray spectrum intensity from the nitrogen atom, which is defined as the nitrogen segregation rate. When this value is 1 or more, segregation of nitrogen on the surface occurs.
[0119]
Referring to FIG. 20, the oxide film is made of the UV-O₂In the case of a film formed to a thickness of 7 ° by the treatment, the nitrogen segregation rate becomes 1 or more, and nitrogen atoms are initially segregated on the surface, and a state like the oxynitride film 12A in FIG. 1 is considered to be realized. . RF-N for 90 seconds₂It can be seen that after the treatment, the film is almost uniformly distributed in the film. For other films, RF-N for 90 seconds₂It can be seen that the distribution of nitrogen atoms in the film becomes substantially uniform by the treatment.
[0120]
In the experiment of FIG. 21, in the substrate processing apparatus 20 of FIG.₂Processing and below RF-N₂The processing was repeatedly executed for ten wafers (wafer # 1 to wafer # 10).
[0121]
FIG. 21 shows a variation in film thickness of the oxynitride film obtained in this manner for each wafer. However, the result in FIG. 21 is based on the UV-O₂At the time of the oxidation treatment, an oxide film is formed so that the thickness of the oxide film obtained by the XPS measurement becomes 0.4 nm, and then the oxide film thus formed is driven by driving the remote plasma source 26. RF-N to do₂This is a case in which the film is converted into an oxynitride film containing about 4% of nitrogen atoms by the treatment.
[0122]
Referring to FIG. 21, the ordinate indicates the film thickness obtained by ellipsometry for the oxynitride film obtained in this manner. As can be seen from FIG. 21, the obtained film thickness is approximately 8 ° (0. 8 nm).
[0123]
FIG. 22 shows that an oxide film having a thickness of 0.4 nm is formed on a silicon substrate by UV-O using an ultraviolet light source 25 by the substrate processing apparatus 20 of FIG.₂After being formed by the processing, the RF-N₂The result of examining the increase in film thickness due to nitriding in the case of the treatment is shown.
[0124]
Referring to FIG. 22, initially (RF-N₂Before the treatment) the oxide film having a thickness of about 0.38 nm₂It can be seen that the film thickness has increased to about 0.5 nm when 4 to 7% of nitrogen atoms have been introduced by the treatment. On the other hand, RF-N₂When about 15% of nitrogen atoms are introduced by the treatment, the film thickness increases to about 1.3 nm. In this case, the introduced nitrogen atoms pass through the oxide film and penetrate into the silicon substrate, and the nitrided It is considered that a film was formed.
[0125]
In FIG. 22, the relationship between the nitrogen concentration and the film thickness in an ideal model structure in which nitrogen is introduced into the oxide film having a thickness of 0.4 nm by one layer is shown by で.
[0126]
Referring to FIG. 22, in this ideal model structure, the film thickness after the introduction of nitrogen atoms is about 0.5 nm, in which case the film thickness increases by about 0.1 nm and the nitrogen concentration becomes about 12%. .
[0127]
Based on this model, it can be concluded that when nitriding the oxide film by the substrate processing apparatus 20 of FIG. 3, it is preferable to suppress the increase in film thickness to about 0.1 to 0.2 nm. At that time, the amount of nitrogen atoms taken into the film is estimated to be about 12% at the maximum.
[0128]
FIGS. 23A and 23B show an oxide film formed on the silicon substrate W by the substrate processing apparatus 20 of FIG. 3 to a thickness of 2 nm while rotating the silicon substrate W by the driving mechanism 22C. The results of measuring the nitrogen concentration distribution and the film thickness distribution of the oxynitride film are shown. However, in the experiments of FIGS. 23A and 23B, while rotating a silicon substrate on which an oxide film is formed to a thickness of 2 nm, 2 SLM of Ar gas and nitrogen gas at a substrate temperature of 450 ° C. under a pressure of 133 Pa. While supplying a flow rate of 50 sccm. In FIG. 23A, a portion of the substrate surface where nitrogen is concentrated is shown brightly. FIG. 23B shows the thickness of the oxynitride film obtained by ellipsometry and the nitrogen concentration obtained by XPS analysis.
[0129]
The results of FIGS. 23A and 23B show that the asymmetric radical flow is generated by rotating the substrate W in the substrate processing apparatus 20 of FIG. 3 and further optimizing the flow rates of the Ar gas and the nitrogen gas. This shows that the resulting substrate processing apparatus 20 can also realize a substantially uniform nitrogen distribution over the entire surface of the substrate W.
[0130]
FIG. 24 is a diagram corresponding to FIG. 22 described above, and shows UV-O as shown in the flowchart of FIG.₂RF-N is applied to the oxide film formed by the process (step S1).₂The relationship between the nitrogen concentration in the oxynitride film obtained by performing the process (step S2) and the film thickness measured by the XPS method is shown. However, in FIG. 24, the RF-N₂The initial thickness of the oxide film prior to the processing is varied in various ways.
[0131]
Referring to FIG. 24, the closed circles indicate the relationship between the XPS film thickness and the nitrogen concentration in the film when the initial thickness of the oxide film is 0.4 nm, and corresponds to the case indicated by the closed circles in FIG. However, in the experiment of FIG. 24, it is found that the nitrogen concentration in the oxynitride film thus obtained increases linearly with the XPS film thickness when the film thickness is in the range up to about 0.8 nm. .
[0132]
On the other hand, the example indicated by ■ in the figure corresponds to the case where the initial thickness of the oxide film is set to 0.3 nm. However, the nitrogen concentration in the obtained oxynitride film together with the XPS film thickness also increases. It can be seen that the thickness increases linearly with almost the same gradient as when the film thickness is 0.4 nm.
[0133]
Therefore, when such an oxynitride film is used as the base oxide film 2 under the high dielectric gate insulating film 3 as shown in FIG. Although the oxidation of 1 is suppressed, from the relationship shown in FIG. 24, if the nitrogen concentration is too high, the physical thickness of the obtained oxynitride film increases, and the effect of using the high dielectric gate insulating film 3 is offset. It is understood that it is done.
[0134]
So, like this, UV-O₂Oxide film (hereinafter referred to as UV-O)₂RF-N)₂When trying to introduce nitrogen at a concentration of 20% or more into the oxynitride film formed by the treatment, the UV-O₂It can be seen that the initial thickness of the oxide film needs to be smaller than 0.4 nm. That is, when the oxynitride film into which such a high concentration of nitrogen is introduced is used as the base oxide film of the high dielectric gate insulating film, the UV-O₂It is necessary to set the initial thickness of the oxide film to be smaller than 0.4 nm.
[0135]
FIGS. 26 (A) to 26 (C) show UV-O₂An oxide film 2 is formed on a silicon substrate 1 by a treatment, and HfO is formed on the formed oxide film 2 as a high dielectric film 3.₂When a film is formed, the structure formed on the Si substrate 1 is determined by the XPS method._2pShow the spectrum of the orbit. 26 (A) shows the spectrum in the state where the oxide film 2 is formed, and FIG. 26 (B) shows the HfO₂FIG. 26C shows the spectrum in the state where the film is formed, and FIG.₂4 shows a spectrum when the film is heat-treated. 26A to 26C show schematic element structures corresponding to each of FIGS. 26 (A) to 26 (C), the same reference numerals are given to the parts described above, and the description will be omitted.
[0136]
Referring to FIGS. 26A to 26C, Si in the state of FIG._2pIn addition to the orbital spectral peak A, the chemically shifted Si_2pAlthough the spectrum peak B having a low orbit is observed, the intensity of the peak B increases in the state of FIG. 26B, and particularly in the state after the heat treatment of FIG. It can be seen that the intensity increases until it becomes comparable to the intensity of A.
[0137]
The chemical shift corresponding to the peak B is such that Si atoms in the substrate 1 and the oxide film 2 are HfO₂It is generated by bonding with oxygen atoms from the film,_2pAssuming that all the chemical shifts in the orbital spectrum are caused by the interface reaction of the silicon substrate 1, it is possible to estimate the degree of the increase in the thickness of the oxide film 2 due to the heat treatment step of FIG. it can.
[0138]
FIG. 27 shows HfO on oxide films of various initial thicknesses.₂When a film is formed and heat treatment is performed, HfO₂The results of evaluating the change in the thickness of the oxide film 2 before the film formation and after the heat treatment are shown. However, in FIG. 27, the horizontal axis is HfO corresponding to FIG.₂The vertical axis represents the oxide film thickness after the heat treatment corresponding to FIG.
[0139]
From FIG. 27, for example, UV-O₂It can be seen that when the initial film thickness of the oxide film exceeds 0.4 nm, the final film thickness decreases or stops. Therefore, if it is considered that this increase in film thickness corresponds to suppression of the interface reaction on the silicon substrate surface, ZrSiO₄In the previous embodiment in which the film is formed, the film formation stops when the oxide film 2 has a thickness of 0.4 nm, so that this film thickness is optimal. From the viewpoint of suppressing the interfacial reaction on the surface of the silicon substrate, there is a possibility that the optimum value of the oxide film 2 exists at a place thicker than 0.4 nm.
[0140]
As described above, the degree of the interfacial reaction varies depending on the type of the high dielectric film, its reactivity, the degree of the subsequent heat treatment, and the like. May be required. Of course, the process of the entire high dielectric gate insulating film should be designed so that the interface reaction is minimized, and the thickness of the base oxide film 2 should ideally be 0.4 nm. In conclusion, the base oxide film 2 preferably has a thickness in the range of 2 to 4 atomic layers, more preferably has a thickness in the range of 2 to 3 atomic layers, and has a thickness of 2 atomic layers. Is most preferred.
[Second embodiment]
FIG. 28A is a flowchart showing a process of forming an oxynitride film on the surface of a silicon substrate according to the second embodiment of the present invention, which is performed by using the substrate processing apparatus 20 of FIG. 3, and FIG. 3, after forming an oxide film on the silicon substrate surface in the substrate processing apparatus 20, the substrate is taken out into the atmosphere, the substrate is returned to the processing vessel 21 of the substrate processing apparatus 20, and the oxide film is removed by RF-N.₂FIG. 29 is a flowchart showing a process of forming an oxynitride film according to a comparative example with respect to the process of FIG.
[0141]
First, referring to the comparative example of FIG. 28B, in step 21, the surface of the substrate W to be processed in the substrate processing apparatus 20 of FIG.₂A silicon oxide film is formed by using a UV-excited oxygen radical in the processing step, and then, after the substrate W is once carried out of the processing container 21 in step 22, the inside of the processing container 21 is evacuated to a high vacuum state. Then, the target substrate W is returned into the processing container 21 again. Further, in step 23, the RF-N using the RF-excited nitrogen radical described above is used.₂A process is performed to convert the silicon oxide film into a silicon oxynitride film.
[0142]
In the process of FIG. 28B, since the inside of the processing chamber 21 is evacuated to a high vacuum state in step 22, the RF-N₂It is considered that there is no contamination by oxygen in the processing step, and the increase in the thickness of the oxynitride film due to oxidation is minimized.
[0143]
On the other hand, in the process of FIG. 28A, in order to improve the substrate processing throughput, the UV-O₂The substrate W after the processing step is held in the processing container 21 as it is, and after the purging step of step 12, the RF-N using the RF excited nitrogen radical corresponding to step 23₂Through the processing step 13, the silicon oxide film is converted into a silicon oxynitride film.
[0144]
FIG. 29A shows the thickness of the oxynitride film formed in the step of FIG. 28A obtained by the XPS method and the thickness of the oxynitride film formed in the step of FIG. The results are shown in comparison with the obtained film thickness. However, in FIG. 29A, the horizontal axis indicates the nitriding time in step 13 in FIG. 28A or step 23 in FIG. 28B. In FIG. 29A, ■ indicates the process of FIG. 28A, and ◆ indicates the process of FIG. 28B.
[0145]
Referring to FIG. 29A, the thickness of the oxynitride film increases with the progress of the nitriding treatment, but a substantial difference is observed between the process of FIG. 28A and the process of FIG. That is, it can be seen that a sufficient oxygen purge was also realized in the process of FIG.
[0146]
FIG. 29B shows the concentration of nitrogen atoms taken into the oxynitride film in the process of FIG. 28A and the process of FIG. 28B. However, in FIG. 29B, the horizontal axis indicates the nitriding time in step 13 of FIG. 28A or step 23 of FIG. 28B. In FIG. 29B, ■ indicates the process of FIG. 28A, and ◆ indicates the process of FIG. 28B.
[0147]
Referring to FIG. 29B, there is substantially no difference in the concentration of nitrogen atoms taken into the oxynitride film between the process of FIG. 28A and the process of FIG. Is understood to be due to the introduction of nitrogen into the oxynitride film.
[0148]
Next, the inventor of the present invention uses the substrate processing apparatus 20 of FIG. 3 to generate oxygen radicals by a remote plasma source 26 instead of the ultraviolet light source 25 to form an oxide film (hereinafter referred to as RF-O).₂RF-O₂The oxide film formed by the treatment is converted into an RF-N using nitrogen radicals generated by the remote plasma source 26.₂An experiment was performed to form an oxynitride film by nitriding by the treatment.
[0149]
In the experiment of FIG. 30A, in step 31, Ar gas and oxygen gas are introduced into the remote plasma source 26 to perform RF-O.₂The process is performed, and after purging the processing container 21 to a high vacuum state in step 32, the processing container 21 is purged four times with Ar. Further, in step 33, the RF-N using the remote plasma source 26 is used.₂Processing is in progress.
[0150]
On the other hand, in the experiment of FIG. 30B, Ar and O are applied to the remote plasma source 26 in step 41 as in step 31.₂RF-O₂The processing is performed, and thereafter, in step 42, the substrate to be processed W is carried out of the processing container 21. In this state, after the inside of the processing container 21 is evacuated to a high vacuum state, the substrate W to be processed is returned to the processing container 21, and in step 43, the same RF-N₂Perform processing.
[0151]
FIG. 31A shows the film thickness of the oxynitride film formed by the process of FIG. 30A obtained by the XPS method, which is obtained by the process of FIG. 30B. The results are shown in comparison with the film thickness obtained by the XPS method. However, in FIG. 31A, ■ corresponds to the process of FIG. 30A, and ◆ corresponds to the process of FIG.
[0152]
Referring to FIG. 31A, the oxide film is formed on the substrate W to be processed by RF-O by the remote plasma source 26.₂It can be seen that when the film is formed by the treatment, a substantial film increase occurs when the process of FIG.
[0153]
FIG. 31B shows the concentration of nitrogen atoms in the oxynitride film formed by the process of FIG. 30A and the concentration of nitrogen atoms in the oxynitride film formed by the process of FIG. Shown in comparison. However, in FIG. 31B, ■ corresponds to the process of FIG. 30A, and ◆ corresponds to the process of FIG. 30B.
[0154]
Referring to FIG. 31B, the nitrogen concentration in the oxynitride film formed by the process of FIG. 30A is lower than the nitrogen concentration in the oxynitride film formed by the process of FIG. It can be seen that the film increase in the process of FIG. 30A shown in FIG. 31A is mainly caused by residual oxygen. Such residual oxygen is probably present in the remote radical source 26 and forms oxygen radicals at the same time as nitrogen radicals are formed in the nitriding step 33 of FIG. 30A, thereby promoting the oxidation reaction of the oxynitride film. It is considered to be.
[0155]
For this reason, as shown in the flowchart of FIG. 25, an extremely thin oxide film is formed on the surface of the substrate to be processed, and this is formed by RF-N.₂In the case of forming an oxynitride film by processing, the substrate processing apparatus 20 described with reference to FIG. 3 is used, and the first oxide film is formed by UV-O using oxygen radicals excited by ultraviolet light.₂It is understood that it is preferable to perform the treatment.
[Third embodiment]
FIG. 32 is a flowchart showing a process of forming an oxynitride film according to the third embodiment of the present invention. However, in FIG. 32, the parts described above are denoted by the same reference numerals, and description thereof will be omitted.
[0156]
Referring to FIG. 32, the process of forming the oxynitride film according to the present embodiment is similar to the process described above with reference to FIG. 28A, but using Ar gas in the purging process of the processing chamber 21 in Step 12. The number of purges is varied between 0 and 4 times. Each of the Ar purging processes includes a step of flowing Ar gas into the processing container 21 and a step of evacuating the processing container 21 to a high vacuum state.
[0157]
FIG. 33A shows the relationship between the number of times of the Ar purge process performed in the step 12 of FIG. 32 and the film thickness of the oxynitride film obtained in the step 13 obtained by ellipsometry.
[0158]
Referring to FIG. 33A, it can be seen that the thickness of the oxynitride film is constant at about 1.4 nm regardless of the number of times of the Ar purge.
[0159]
On the other hand, FIG. 33B shows the thickness of the oxynitride film obtained when the number of times of the Ar purge process in step 32 is variously changed in the process of FIG. 30A.
[0160]
Referring to FIG. 33 (B), the thickness of the oxynitride film decreases slightly with the number of purges, and the purging in step 32 is necessary to suppress the increase in the thickness of the oxynitride film due to oxidation. It indicates that there is.
[0161]
The results of FIGS. 33 (A) and (B) show that the purging step of step 12 is not necessarily required when the oxynitride film is formed by the process of FIG. 30 (A), and that this step can be omitted. This means that substantially no film increase occurs in the obtained oxynitride film.
[Fourth embodiment]
By the way, as described above, FIG.₂RF-N of oxide film₂When nitriding by the treatment is performed, when the nitrogen concentration is 20%, the thickness of the obtained oxynitride film is inevitably about 0.8 nm. If the thickness of the oxynitride film is reduced more than this, UV-O₂Starting from an oxide film, it is necessary to reduce the initial film thickness to about 0.2 or 0.1 nm or less.
[0162]
In the present embodiment, the above-described UV-O₂In the substrate processing apparatus 20 shown in FIG. 3, NO gas is introduced from the gas nozzle 21D instead of the oxide film, and atomic oxygen and atomic nitrogen are excited by performing ultraviolet light excitation, and the excited atomic oxygen and atomic nitrogen are excited. To perform an oxynitriding process (hereinafter referred to as UV-NO process). The oxynitride film thus obtained, that is, the UV-NO film already contains nitrogen in the initial state.₂By performing the treatment, a high concentration of nitrogen can be introduced into the film while the film thickness is suppressed to a minimum.
[0163]
FIG. 34 shows potential curves of NO molecules in various excited states (see, for example, JS Chang et al., “Atomic and molecular processes of ionized gas”, Tokyo Denki University Press, 1982).
[0164]
In the light transition of the NO molecule by ultraviolet light, the excited state A²Σ⁺, B²Πr, C²Π, D²Σ⁺, E²Σ⁺It is known that there is an absorption band accompanying the transition to, and transition is possible at light wavelengths of 227 nm, 218 nm, 192 nm, 188 nm, and 165 nm or less, respectively.
[0165]
On the other hand, atomic oxygen (O³P) and atomic nitrogen (N⁴S⁰) Can be seen from FIG. 34 to be between 192 nm and 145 nm. That is, by exciting NO molecules with a light wavelength of 145 nm or more, it is possible to generate atomic oxygen and atomic nitrogen. On the other hand, when the light wavelength is shorter than 145 nm, radical oxygen (O¹Since D) starts to be excited, it is considered that an oxidation reaction mainly takes place during substrate processing.
[0166]
Under such circumstances, a desired UV-NO film can be formed as an initial film by using an ultraviolet light source having a wavelength in the range of 192 to 145 nm as the ultraviolet light source 25 in the substrate processing apparatus 20 of FIG.
[0167]
FIG. 35 shows that the UV-NO process is followed by the RF-N process.₂An outline of a substrate processing step according to the present embodiment for performing processing will be described.
[0168]
Referring to FIG. 35, in step 51, the surface of the silicon substrate is nitrided by the UV-NO process to form an oxynitride film.
[0169]
Further, in step 52, the oxynitride film is RF-N₂The oxynitride film that has been processed and formed earlier is further nitrided, and an oxynitride film with a high nitrogen concentration is obtained.
[0170]
Table 3 below shows an example of processing conditions for steps 51 and 52 of FIG. However, in Table 3, the step 51 is the same as the UV-O described above.₂The conditions of the process (step 1 in FIG. 25) are also shown.
[0171]
[Table 3]

Further, Table 4 below shows allowable process conditions of the steps S51 and S52. As in Table 3, also in Table 4, in step S51, the UV-O₂The allowable process conditions are shown for both the treatment and the UV-NO treatment.
[0172]
[Table 4]

From Tables 3 and 4, the UV-O₂The treatment is performed at a pressure range of 0.02 to 5 Torr (0.0266 to 665 Pa) at a temperature range of 300 to 750 ° C., and the UV-NO treatment is performed at a pressure range of 0.01 to 5 Torr (0.0133 to 665 Pa). It can be performed in a temperature range of 300 to 750 ° C.
[0173]
On the other hand, the RF nitridation^-3It can be performed in a pressure range of 10 to 10 Torr (0.133 Pa to 1.33 kPa) and a temperature range of 300 to 700 ° C. Particularly, a range of 0.67 Pa to 13.3 kPa is preferable.
[0174]
Here, referring again to FIG. 24 described above, ▲ and 中 in the drawing show the relationship between the nitrogen concentration in the oxynitride film formed by the process of FIG. 35 and the film thickness.
[0175]
Referring to FIG. 24, the oxynitride film contains about 10% of nitrogen even immediately after being formed by the UV-NO processing, and accordingly, the RF-N in step S52 in FIG.₂By performing the treatment process, an oxynitride film with a higher nitrogen concentration can be formed. In this case, the data indicated by ▲ in the figure indicates the case where the film thickness immediately after the film formation by the UV-NO treatment is 0.5 nm, and the data indicated by ▼ indicates the data when the film thickness immediately after the film formation by the UV-NO treatment is 0 nm. Although the case of .4 nm is shown, especially in the case of the film indicated by ▼, RF-N₂It can be seen that by performing the treatment, a nitrogen concentration of 20% can be realized even if the film thickness measured by the XPS method is 0.6 nm or less.
[0176]
FIG. 36 shows UV-O in the previous embodiment.₂RF-N following processing₂For the oxynitride film obtained by the treatment, the binding energy of the nitrogen atoms in the film in the 1 s state was determined by the XPS method, and the result obtained by performing the UV-NO treatment described above was used. The results are shown together with the results for the film and the results for the oxynitride film formed by other methods. In FIG. 36, the vertical axis represents the full width at half maximum (FWHM) of the XPS spectrum, and the horizontal axis represents NW._1sIndicates the binding energy of an atom.
[0177]
Referring to FIG. 36, in the oxynitride film having a particularly high binding energy, the Si atom occupies the nearest position of the nitrogen atom as shown in FIG. In the oxynitride film having a low binding energy, on the other hand, the Si atom occupies the nearest position of the nitrogen atom and the Si atom also occupies the second adjacent position as shown in FIG. Is occupied. The difference between the binding energies is about 0.6 eV, which matches the distribution on the horizontal axis in FIG.
[0178]
Referring to FIG. 37A, in this state, nitrogen atoms are contained in the oxide film. For example, as shown in FIG. 1, nitrogen atoms are present inside or near the surface of the oxide film. Corresponding. On the other hand, the state where one or a plurality of Sis surrounded by a dotted line in FIG. 37B is replaced by oxygen as shown by an arrow in the drawing is the difference between the silicon substrate and the oxynitride film in the oxynitride film. This corresponds to a state where nitrogen atoms are concentrated near the interface.
[0179]
Looking at FIG. 36, the UV-O₂RF-N oxide film₂In the treated oxynitride film, the binding energy is widely dispersed from about 397.6 eV on the relatively low energy side to about 398.1 eV on the high energy side, and the value of the peak half width is large. It is estimated that the state of FIG. 37A and the state of FIG. 37B are mixed in the film.
[0180]
On the other hand, in the oxynitride film subjected to only the UV-NO treatment, the binding energy is dispersed on the low energy side from about 397.5 eV to about 397.9 eV, and the value of the peak half width is smaller. From the above, it is presumed that the state of FIG. 37A and the state of FIG. 37B are mixed in the film, but the state of FIG. 37B is somewhat dominant. You. That is, in this case, it is considered that the distribution of nitrogen atoms in the oxynitride film is shifted closer to the silicon substrate.
[0181]
In FIG. 36, a thermal oxide film is further formed by RF-N₂Oxynitride film (RTO / RFN) formed by processing, oxynitride film (SPA) formed by microwave plasma nitriding of thermal oxide film, and oxynitride film (RTNO) formed by thermal oxynitriding of silicon substrate ) Are shown.
[0182]
Regarding the oxynitride films RTO / RFN and SPA, the observed binding energy in the N1s state is relatively large, and it is considered that the state in FIG. 37A is dominant. On the other hand, the binding energy of the N1s state observed in the oxynitride film RTNO is concentrated near 397.4 eV. This is because nitrogen atoms in the oxynitride film are concentrated near the interface with the silicon substrate. It is considered to indicate that
[0183]
Thus, the UV-O according to the present invention₂RF-N oxide film₂According to the method of forming the oxynitride film to be treated, it is possible to realize a relatively more concentrated but relatively uniform distribution of nitrogen atoms in the oxynitride film on the film surface side. On the other hand, when the existing oxide film is RF-nitrided, UVO in FIG.₂As can be seen from the results of / RFN, RTO / RFN, and SPA, it is considered that nitrogen atoms are mainly distributed near the surface of the film. Therefore, when the oxynitride film formed by performing the UV-NO process shown in FIG. 36 is further subjected to the RF nitridation process, nitrogen atoms are substantially transferred from the interface between the oxynitride film and the silicon substrate to the surface. It is thought that it can be distributed uniformly.
[Fifth embodiment]
Incidentally, when manufacturing the semiconductor device having the high dielectric gate insulating film of FIG. 1, it is necessary to form the high dielectric film 3 on the base oxide film 2 formed by such a substrate processing apparatus 20. .
[0184]
The high dielectric film 3 is typically formed by a CVD method, for example, ZrO.₂When forming a film, ZrCl₄And other gaseous materials containing Zr, which are oxidized to produce ZrO₂Deposit the film.
[0185]
The formation of such a high dielectric film 3 is preferably performed without exposing the substrate to be processed to the outside air following the nitriding step of the radical oxide film shown in FIGS. 16A and 16B. The third substrate processing apparatus 20 is desirably incorporated in a cluster type substrate processing apparatus including a CVD chamber.
[0186]
FIG. 38 shows a schematic configuration of such a cluster type substrate processing apparatus 30 according to the fifth embodiment of the present invention.
[0187]
Referring to FIG. 38, a cluster type substrate processing apparatus 30 includes cassette modules 31A and 31B for taking in and out a substrate W to be processed, and a substrate transfer chamber 32 coupled to the cassette modules 31A and 31B via respective gate valves. The substrate transfer chamber 32 further includes a substrate cleaning chamber 33, a base film forming chamber 34, a CVD chamber 35, and a heat treatment chamber 36.
[0188]
Then, the substrate W to be processed introduced from the cassette module 31A or 31B into the substrate transfer chamber 32 is first sent to the substrate cleaning chamber 33, where a natural oxide film and organic matter contamination are removed. Next, the substrate W to be processed is sent to the base oxide film forming chamber 34 via the substrate transfer chamber 32, and the base oxide film 12 and the nitride film 12A are formed.
[0189]
Thereafter, the substrate W to be processed is sent to the CVD chamber 35 through the substrate transfer chamber 32, where the high dielectric film 13 is formed, and further sent to the heat treatment chamber 36 where crystallization and oxygen deficiency compensation are performed. After the processing in the heat treatment chamber 36, the substrate to be processed W is sent to the cassette module 31A or 31B through the substrate transfer chamber 32.
[0190]
By the way, various apparatuses cooperating with each other are provided in each of the processing chambers 33 to 36. As a result, the processing chamber requires an area shown by a broken line in FIG. 38 in addition to itself. At this time, it can be seen that the portion of the processing chamber on the side facing the substrate transfer chamber 32 has a narrow space with other processing chambers, and the available space is limited.
[0191]
Therefore, when the substrate processing apparatus 20 of FIG. 3 is used in such a cluster type substrate processing apparatus 30, the processing container 21 is coupled to the substrate transfer chamber 32 instead of the substrate transfer unit 27. In this case, the turbo molecular pump 23B protruding laterally on the side closer to the substrate transfer chamber 32 of the processing chamber 21 shown in FIG. 4B or 16B interferes with the adjacent processing chamber. Problems arise.
[0192]
The turbo molecular pump 23B needs to be provided near the exhaust port 21A in order to quickly decompress the processing vessel 21, but various devices such as a transfer robot are provided below the substrate transfer chamber 32. There is no space available for In addition, various devices such as a substrate rotating mechanism 22C are provided below the processing container 21, and a space for providing the turbo molecular pump 23B cannot be obtained.
[0193]
FIGS. 39A and 39B are a side view and a plan view, respectively, showing a configuration of a substrate processing apparatus 40 according to a fifth embodiment of the present invention. 39 (A) and 39 (B), the same reference numerals are given to the previously described portions, and description thereof will be omitted.
[0194]
Referring to FIGS. 39A and 39B, the substrate processing apparatus 40 includes a turbo molecular pump 23B and a processing container 21 having a sufficient space when a cluster type substrate processing apparatus as shown in FIG. 38 is configured. It is arranged outside, that is, on the side opposite to the substrate transfer unit 27. Accordingly, an exhaust port 21E cooperating with the turbo molecular pump 23B is formed in the processing container 21 on the side opposite to the substrate transfer chamber. Further, the processing gas nozzle 21D for introducing oxygen and the ultraviolet light source 25 are positioned closer to the substrate transfer chamber 27 than the substrate W to be processed so that oxygen radicals flow to the exhaust port 21E through the surface of the substrate W to be processed. Is provided.
[0195]
The turbo-molecular pump 23B is coupled via a valve 23A in a direction perpendicular to the lower part of the processing vessel 21, that is, in a direction in which an intake port and an exhaust port are vertically arranged. Is connected to the exhaust line from the exhaust port 21A of the processing container 21 to the pump 24 via the valve 24A after the valve 24A.
[0196]
In the substrate processing apparatus 40, since the turbo molecular pump 23B is formed and arranged on the outside, that is, on the side opposite to the substrate transfer unit 27, even if a cluster type substrate processing apparatus as shown in FIG. There is no problem of interference with the adjacent processing chamber.
[0197]
FIGS. 40A and 40B show a process of forming the base oxide film 12 using the substrate processing apparatus 40. FIG.
[0198]
Referring to FIGS. 40A and 40B, in the base oxide film forming step, valves 23A and 23C are opened and valve 24A is closed. As a result, the process space 23B is 1.33 × 10 3 at the exhaust port 21E by the turbo molecular pump 23B.^-1~ 1.33 × 10^-4Pa (10^-3-10^-6The pressure is reduced to a high vacuum state of (Torr), and in this state, oxygen gas is introduced into the process space 21B from the processing gas nozzle 21D. Further, by driving the ultraviolet light source 25 with appropriate energy while rotating the substrate W to be processed by the substrate rotating mechanism 22C, the formed oxygen radicals flow along the substrate surface to the exhaust port 21E, and the substrate surface is flushed. Oxidation. As a result, an extremely thin silicon oxide film having a thickness of about 0.4 nm corresponding to a thickness of 1 nm or less, particularly a thickness of 2 to 3 atomic layers, can be uniformly and stably formed on the silicon substrate surface. Becomes possible. Of course, a silicon oxide film having a thickness exceeding 1 nm can be formed.
[0199]
FIGS. 41A and 41B show that the surface of the formed base oxide film 2 is nitrided after the process of FIGS. 40A and 40B using the substrate processing apparatus 40 of this embodiment. The step of forming the nitride film 2A is shown.
[0200]
Referring to FIGS. 41A and 41B, in the nitriding step, the valves 23A and 23C are closed and the valve 24A is opened. As a result, the turbo molecular pump 23B is shut off from the exhaust system, and the process space 21B is directly exhausted by the pump 24 and reduced to a pressure of 1.33 Pa to 1.33 kPa (0.01 to 10 Torr).
[0201]
In this state, an Ar gas and a nitrogen gas are supplied to the remote plasma source 26, and further, high-frequency excitation thereof is performed to form nitrogen radicals. The formed nitrogen radicals flow to the exhaust port 21A along the surface of the substrate W to be processed, and uniformly nitride the surface of the substrate W rotating at that time. By such nitriding, the surface of base oxide film 2 shown in FIG. 1 is converted to oxynitride film 2A.
[0202]
By using the substrate processing apparatus 40 of the present embodiment in the processing chamber 34 in the cluster type substrate processing apparatus shown in FIG. 38, the substrate processing apparatus 40 is continuously formed on the base oxide film 2 including the oxynitride film 2A thus formed. ZrO₂, HfO₂, Ta₂O₅, ZrSiO₄, HfSiO₄, Al₂O₃It is possible to form a high dielectric film 13 such as
[0203]
In the above description, an example in which a very thin base oxide film is formed using the substrate processing apparatus 40 has been described. However, the present invention is not limited to such a specific embodiment, and the present invention is not limited to such a specific embodiment. It is possible to apply a high-quality oxide film, nitride film or oxynitride film to a desired film thickness.
[Sixth embodiment]
In the above embodiment, the base oxide film 2 of the semiconductor device 100 shown in FIG. 1 is formed to a thickness of about 0.4 nm using the substrate processing apparatus 20 of FIG. 3, and the oxynitride film 2A is formed on the surface thereof. Although the technique described above has been described, it is also possible to form a thick oxynitride film by the substrate processing apparatus 20 and thereby form the gate insulating film 3A as in the semiconductor device 200 shown in FIG.
[0204]
Referring to FIG. 42, in the semiconductor device 200, the gate insulating film 3 of FIG. 1 is not used, and the gate electrode 4 is formed directly on the gate insulating film 3A. In FIG. 42, the parts described above are denoted by the same reference numerals, and description thereof will be omitted.
[0205]
In the semiconductor device 200 shown in FIG. 42, it is not necessary to use the high dielectric film 3 and the gate insulating film can be formed by the oxynitride film used in the conventional semiconductor process technology, so that the semiconductor device can be easily manufactured. On the other hand, in the semiconductor device 200 of FIG. 42, the gate insulating film 3A made of an oxynitride film is changed to about 1.0 nm or more in terms of an oxide film using the substrate processing apparatus 20 described above with reference to FIG. , That is, a physical thickness of about 1.6 nm.
[0206]
FIG. 43 is a diagram showing a step of forming a thick oxynitride film according to the present embodiment.
[0207]
Referring to FIG. 43, in step 61, UV-O on the silicon substrate surface due to ultraviolet light-excited oxygen radicals₂After performing the processing, the formed oxide film is subjected to RF-N₂In the present embodiment, the steps 61 and 62 are performed at a relatively high temperature of 750 ° C. to achieve a desired film thickness. The purging process between step 61 and step 62 is omitted in view of the result of the experiment shown in FIG.
[0208]
FIG. 44 shows the UV-O in step 61 of FIG.₂3 shows a film thickness distribution of a silicon oxide film obtained in a processing step on a silicon substrate surface. However, the film thickness in FIG. 44 is measured by spectroscopic ellipsometry.
[0209]
Referring to FIG. 44, the silicon oxide film is formed while rotating the substrate at a substrate temperature of 750 ° C. under a pressure of 400 Pa (3 Torr). It can be seen that a uniform oxide film is formed.
[0210]
FIGS. 45A to 45C show the processing conditions of the oxide film of FIG. 44 in the remote plasma nitriding step in step 62 of FIG. 43 and the thickness distribution of the obtained oxynitride film.
[0211]
Referring to FIG. 45 (A), the plasma nitriding process is performed at a substrate temperature of 750 ° C. under a pressure of 26.6 kPa (200 mTorr) by changing the nitrogen gas flow rate and the Ar gas flow rate in the range shown in the drawing. Was. In FIG. 45 (A), line A indicates the upper limit of the nitrogen gas flow rate at which the plasma is ignited, and lines B and C indicate the pressure controllable range of the substrate processing apparatus 20 of FIG.
[0212]
As shown in the center of FIG. 45B, when the Ar gas flow rate and the nitrogen gas flow rate are selected to be on the line D, the nitrogen concentration distribution in the film, that is, the film thickness distribution of the oxynitride film is uniform. It can be seen that a very small value of about 0.7% can be achieved as the film thickness dispersion value σ.
[0213]
On the other hand, when the Ar gas flow rate and the nitrogen gas flow rate are set at positions deviated from the line D, the nitrogen concentration increases in the peripheral portion of the substrate as shown on the left side of FIG. As shown on the right side of (B), a distribution in which the nitrogen concentration increases in the central portion of the substrate occurs, and the variance σ of the film thickness distribution increases.
[0214]
That is, while the nitrogen concentration distribution in the oxynitride film, that is, the film thickness distribution becomes convex and concave on the right and left sides of the line D in FIG. 45A, respectively, the nitrogen gas flow rate and the Ar gas flow rate When it is selected to ride on D, a flat film thickness distribution of the oxynitride film is obtained.
[0215]
FIG. 74 shows the RF-N at a substrate temperature of 750 ° C.₂4 shows the relationship between processing uniformity and process pressure. However, in FIG. 74, the horizontal axis is RF-N₂The vertical axis indicates the process pressure during the treatment, and the vertical axis indicates the value obtained by dividing the thickness of the nitrided oxynitride film at the central portion of the substrate by the film thickness at the peripheral portion of the substrate. Therefore, when the vertical axis in FIG. 74 is 1, excellent in-plane uniformity is achieved. When the vertical axis in FIG. 74 is larger than 1, the obtained oxynitride film has a convex film thickness distribution, and when the vertical axis is smaller than 1, it has a concave film thickness distribution.
[0216]
In FIG. 74, ▲ indicates the case where the Ar gas flow rate was set to 800 SCCM and the nitrogen gas flow rate was set to 1150 SCCM, ■ indicates the case where the Ar gas flow rate was set to 1150 SCCM, and the nitrogen gas flow rate was set to 1150 SCCM. The case where the flow rate is set to 1600 SCCM and the nitrogen gas flow rate is set to 1400 SCCM is shown. Therefore, the total flow rate of the process gas, which is the sum of the Ar gas flow rate and the nitrogen gas flow rate, increases in the order of ▲, ■, and ◆.
[0219]
Referring to FIG. 74, when the pressure is changed under the condition that the total flow rate is fixed, it is understood that the film thickness distribution changes from concave to convex on the low pressure side, and then returns to concave. It can also be seen that there are two process pressures at which a uniform thickness oxynitride film can be obtained at any total flow rate. It can also be seen that the curve in FIG. 74 moves toward the high pressure side as the total flow rate increases. Thus, the RF-N of the present invention₂In order to realize the uniformity of the processing in the processing, a method of adjusting the process pressure is also possible besides the method of adjusting the total flow rate of the Ar gas and the nitrogen gas.
[0218]
The line D in FIG. 45A corresponds to the point indicated by ▲ in FIG. 74, but the other optimal point whose existence is presumed from the relationship in FIG. 74 does not actually exist because the pressure is too low. If this optimum point is used, it is necessary to use a pump having a large capacity corresponding to a large exhaust load.
[0219]
FIG. 45C shows the relationship between various Ar gas flow rates and the thickness of the resulting oxynitride film when the Ar gas flow rate and the nitrogen gas flow rate are controlled on the line D in FIG. 45A. . FIG. 45C also shows the film thickness measured by spectroscopic ellipsometry.
[0220]
Referring to FIG. 45 (C), the thickness of the oxynitride film increases as the flow rate of Ar gas, and hence the flow rate of nitrogen gas, increases, which is shown in FIG. 45 (A) or FIG. 45 (B). This indicates that the thickness of the oxynitride film reflects the nitrogen concentration in the film.
[0221]
FIGS. 46A to 46D show RF-N of the oxide film of FIG. 44 performed at a temperature of 750 ° C. and a pressure of 200 mTorr.₂4 shows the kinetics of the nitriding process in the treatment. 46A shows the relationship between the thickness of the oxynitride film obtained by the XPS method and the nitriding time, and FIG. 46B shows the relationship between the concentration of nitrogen atoms taken into the oxynitride film and the nitriding time. FIG. 46 (C) shows O 2 in the oxynitride film obtained by the XPS method._1sFIG. 46D shows the relationship between the area of the signal peak and the nitriding time, and FIG._2pThe relationship between the peak area of the signal and the nitriding time was set to 1.0 nm, 1.2 nm, and 1.3 nm when the thickness of the initial oxide film was measured by a monochromatic ellipsometer. The case is shown. However, the values measured by XPS are about 0.8 nm, 1.0 nm, and 1.3 nm, respectively.
[0222]
Referring to FIGS. 46A to 46D, the thickness and the nitrogen concentration of the oxynitride film tend to increase with the nitriding time regardless of the initial film thickness._1sSignal and Si_2pIt can be seen that the change of the signal with respect to the nitriding time varies depending on the initial thickness of the oxide film.
[0223]
More specifically, RF-N of an oxide film having an initial film thickness of 1.3 nm is used.₂In processing, O_1sThe signal decreases with the nitridation time, indicating that oxygen is desorbed during the nitridation process. On the other hand, RF-N of an oxide film having an initial film thickness of 1.0 nm was used.₂In processing, the observed O_1sThe signal strength has not changed much. This is because oxygen atoms released by the introduction of nitrogen atoms diffuse in the thin oxide film having a thickness of about 1.0 nm and precipitate at the interface with the silicon substrate. At this interface, the oxide film regrows. Suggests that it is occurring.
[0224]
RF-N of an oxide film having an initial film thickness of 1.3 nm₂In the treatment, it is considered that the released oxygen atoms cannot reach the interface between the silicon substrate and the oxide film and escape to the outside of the oxynitride film because the initial thickness of the oxide film is large.
[0225]
Si of FIG._2pLooking at the signals, Si_2pIt can be seen that the signal does not change very much until 30 seconds after the start of the nitriding treatment in the case of an oxide film having an initial film thickness of 1.3 nm. This is considered to indicate that nitrogen atoms introduced into the oxide film have been replaced with oxygen atoms in the film, and have not reached the interface between the oxide film and the silicon substrate. On the other hand, for an oxide film having an initial film thickness of 1.0 nm, Si_2pIt is considered that the number of signals has increased, and that the above-described precipitation of oxygen at the interface between the silicon substrate and the oxide film and the regrowth of the oxide film have occurred.
[0226]
FIGS. 47A to 47D show RF-N of the oxide film in the process of FIG. 43 under the condition that the nitriding reaction is further promoted at the expense of uniformity.₂This shows the result when processing is performed. More specifically, in the experiments of FIGS. 47A to 47D, the processing pressure was set to 400 mTorr. In order to achieve both the promotion of the nitriding reaction and the uniformity, it is necessary to use a large pump capable of providing a larger exhaust load as the pump 24 and a radical source having a larger output as the remote radical source 26. This is essentially the same as controlling the process pressure described above.
[0227]
As shown in FIGS. 47A to 47D, under the conditions set to increase the processing pressure and promote the nitriding treatment, the initial oxide film has a thin thickness of 1.0 nm. Also RF-N₂As can be seen from FIG._1sThe signal intensity is reduced, and as can be seen from FIG. 47 (D), even if the oxide film has an initial_2pIt can be seen that the signal intensity monotonically increases from the beginning of the nitriding process. This is because the nitriding treatment is promoted in the experiments of FIGS. 47A to 47D, so that an amount of nitrogen corresponding to the nitriding concentration in the case of FIGS. This indicates that the atoms have reached the interface between the oxide film and the silicon substrate. If the nitriding treatment is performed under such conditions that the nitriding treatment is accelerated, the nitriding treatment time can be shortened, but if the nitriding time is not optimally controlled, the introduced nitrogen atoms may reach the interface.
[0228]
FIG. 48A shows RF-N of the oxide film estimated from the results of FIGS. 46A to 46D and FIGS. 47A to 47D.₂FIG. 3 is a diagram schematically showing a mechanism of a nitriding step by a process. However, in FIG. 48A, portions corresponding to FIG. 42 are denoted by the same reference numerals, and description thereof will be omitted.
[0229]
Referring to FIG. 48A, RF-N₂If the processing conditions are appropriate, the introduced nitrogen atoms concentrate near the surface of the oxide film, and the nitrogen atoms penetrate into the vicinity of the interface between the silicon substrate 1 and the oxynitride film 3A to form an interface state. Problems can be suppressed. Watanabe, @K. , {Et} al. , @J. {Appl. {Phys. {90} pp. 4701 {2001}.
[0230]
On the other hand, such RF-N₂If the processing conditions are inappropriate and the nitridation reaction proceeds too much, the nitrogen atoms reach the interface between the silicon substrate 1 and the oxynitride film 3A as shown in FIG. There is a risk of doing. For this reason, it is desirable that the process of step 62 in FIG. 43 be completed within 30 seconds.
[0231]
Therefore, in this embodiment, in the substrate processing apparatus 20 of FIG. 3, the number of rotations of the substrate W to be processed per minute is set to 20 and the substrate W₂It is rotated 10 times during processing.
[0232]
FIGS. 49A and 49B show a UV-O having an initial film thickness of 1.0 nm.₂SIMS shows the concentration profiles in the depth direction of Si, N, and O atoms in the central part (C), the intermediate part (M), and the peripheral part (E) of the substrate when the nitriding treatment is performed for 30 seconds while rotating the oxide film. The results obtained by analysis are shown. Note that FIG. 49B is an enlarged view showing the vicinity of the surface of the oxynitride film in FIG. 49A.
[0233]
Referring to FIGS. 49 (A) and (B), the peak of the nitrogen concentration is located at a depth of about 0.5 nm from the surface of oxynitride film 13A, and excellent in-plane uniformity is achieved. You can see that there is. No concentration of nitrogen atoms near the interface between the silicon substrate 1 and the oxynitride film 3A is observed.
[0234]
FIGS. 50A and 50B show UV-O having an initial film thickness of 1.3 nm.₂RF-N₂4 shows a concentration profile in the depth direction of Si, N, and O atoms in a film when nitrided by a process.
[0235]
Also in this case, it can be seen that results similar to those shown in FIGS. 49 (A) and (B) are obtained.
[Seventh embodiment]
FIG. 51 shows a configuration of a substrate processing apparatus 320 according to the seventh embodiment of the present invention.
[0236]
Referring to FIG. 51, the substrate processing apparatus 320 includes a processing container 321 having a holding table 321A for holding a processing substrate 322, and the processing container 321 faces the processing substrate 322 on the holding table 321A. A shower head 321B made of a material that transmits ultraviolet light, such as quartz, is provided. The processing container 321 is exhausted through an exhaust port 321C, while an oxidizing gas such as oxygen is supplied to the shower head 321B from an external gas source.
[0237]
The processing container 321 is further provided with an optical window 321D made of a material that transmits ultraviolet light such as quartz so as to expose the shower head 321B and the substrate 322 under the shower head 321B above the shower head 321B. . A heater 321a for heating the substrate to be processed 322 is provided in the holding table 321A.
[0238]
Further, an ultraviolet light exposure device 324 is provided on the processing container 321 via a coupling portion 323 provided corresponding to the optical window 321D.
[0239]
The ultraviolet light exposure device 324 includes a quartz optical window 324A corresponding to the optical window 321D, and an ultraviolet light source 324B that irradiates ultraviolet light onto the substrate 322 through the quartz optical window 324A and the optical window 321D. The ultraviolet light source 324B is held by a robot 324C so as to be movable in a direction parallel to the optical window 324A as indicated by an arrow in FIG. In the illustrated example, the ultraviolet light source 324B is a linear light source provided to extend substantially perpendicular to the moving direction. As such a linear light source, for example, an excimer lamp having a wavelength of 172 nm can be used.
[0240]
In addition, in the configuration of FIG. 51, in order to prevent ultraviolet rays formed by the ultraviolet light source 324B from being absorbed by oxygen in the air prior to being introduced into the processing container 321 via the optical window 321D. The coupling portion 323 receives N from an external gas source (not shown).₂An inert gas such as is supplied through a line 323A, and the inert gas passes through a gap formed in a mounting portion of the optical window 324A of the ultraviolet light exposure device 324 and a space 324D in the ultraviolet light exposure device 324. Flows into.
[0241]
Further, with the driving of the ultraviolet light source, shielding plates 324F are provided on both side surfaces of the ultraviolet light source 324B in order to prevent the oxygen in the atmosphere from being caught and flowing just below the ultraviolet light source 324B. Below, a line 324b is used to connect a line 324b to a narrow region having a height of at most about 1 mm formed between the optical window 324A facing the ultraviolet light source 324B and the shielding plate 324F.₂An inert gas such as is supplied. This region is also supplied with the inert gas from the line 323A, so that oxygen absorbing ultraviolet light is effectively eliminated in this region.
[0242]
The inert gas that has passed through the area below the shielding plate 324F flows into the space 324D, and is further discharged to the outside through an exhaust port 324E formed in the ultraviolet light exposure device 324.
[0243]
In the substrate processing apparatus of FIG. 51, the movement and scanning of the ultraviolet light source 324B can be controlled by the robot 324C in the ultraviolet light exposure apparatus 324. As a result, the UV-O₂When forming an oxide film by the treatment, it is possible to control the distribution of the film thickness by controlling the irradiation amount of the ultraviolet light exposure. The robot 324C is controlled by a control device 325 such as a computer. The control device 325 also controls the driving of the ultraviolet light source 324B.
[0244]
FIGS. 52A to 52C show film thicknesses obtained by ellipsometry of the obtained oxide film when an oxide film is formed on a silicon substrate under various conditions using the substrate processing apparatus 320 of FIG. The distribution is shown in Å units. However, in FIGS. 52A to 52C, an 8-inch silicon substrate is used as the substrate to be processed 322 in a state where a surface natural oxide film has been removed by a surface pretreatment step described later. In each of FIGS. 52A to 52C, the internal pressure in the processing container 331 is set to about 0.7 kPa (5 Torr), and the substrate temperature is set to 300 ° C.
[0245]
The results shown are those obtained when oxygen gas was supplied into the processing vessel 321 at a flow rate of 1 SLM for 5 minutes. FIG. 52 (A) shows the case where irradiation with ultraviolet light was not performed, and FIG. 52 (B) , (C) are 30 mW / cm directly below the light source by the ultraviolet light source 324B.²Illumination of ultraviolet light is shown. FIG. 52B shows a case where the ultraviolet light source 324B is uniformly scanned in a range of 410 mm, that is, the entire surface of the substrate 322 is uniformly exposed.
[0246]
Referring to FIG. 52A, when ultraviolet light irradiation is not performed, the thickness of the oxide film formed on the silicon substrate surface is about 0.2 to 0.3 nm, and substantial film formation does not occur. On the other hand, in the case of FIG. 52B, an oxide film of about 0.8 nm is formed on the surface of the silicon substrate. Further, in the case of FIG. 52 (B), the thickness of the oxide film formed at the central portion of the 8-inch silicon substrate 322 decreases even though the ultraviolet light source 24B is uniformly scanned in a range of 400 mm. You can see that it is doing. As a result, the variation in the thickness of the oxide film formed on the silicon substrate has a relatively large dispersion value of 2.72%, which reflects a characteristic unique to the substrate processing apparatus 320 used. It is thought that it is doing.
[0247]
On the other hand, FIG. 52 (C) shows the thickness distribution of the oxide film when the ultraviolet light source 324B is scanned within a limited range of 100 mm near the center of the silicon substrate 322.
[0248]
Referring to FIG. 52 (C), the thickness of the oxide film thus formed falls within the range of 0.92 to 0.93 nm, and the variation in the film thickness decreases to 1.35% in the dispersion value. You can see that
[0249]
FIG. 53 shows the ultraviolet exposure time and the thickness of the formed oxide film when the flow rate of the oxygen gas introduced into the processing vessel 321 is variously changed in the experiments of FIGS. 52 (A) to 52 (C). The result of obtaining the relationship with
[0250]
As can be seen from FIG. 53, the thickness of the formed oxide film hardly depends on the flow rate of the oxygen gas, and is saturated at a value of about 1 nm after one minute. On the other hand, when the exposure time is shorter than 1 minute, the film thickness increases with the exposure time. FIG. 53 shows that the process of forming a thin oxide film serving as a base oxide film on the surface of a silicon substrate using the substrate processing apparatus 320 of FIG. 51 can be performed in a very short time.
[0251]
FIGS. 54 (A) to 54 (E) show that in the substrate processing apparatus 320 of FIG. 51, the internal pressure of the processing container is set to about 0.7 kPa (5 Torr), the substrate temperature is set to 450 ° C., and oxygen gas is supplied at a flow rate of 1 SLM. Meanwhile, the thickness distribution of the oxide film obtained when the ultraviolet light source 24B is scanned in the range of 100 mm is shown in Δ units. For simplicity, the silicon substrate is shown in a rectangular shape.
[0252]
54A shows the case where the scanning is performed within a range of ± 50 mm from the center of the substrate as a base point. In the example of FIG. It can also be seen that there is a tendency for the thickness of the oxide film to increase toward the upper right in the x-axis direction. In this case, the variation in the thickness of the oxide film is 3.73% as a dispersion value.
[0253]
On the other hand, FIG. 54B shows the film thickness distribution of the oxide film in the case where the base point of the scanning is shifted 12.5 mm downward and upward in the y-axis direction from the center of the substrate, similarly in units of Å. As can be seen from FIG. 54B, the variation in the thickness of the oxide film is reduced to 3.07% in the dispersion value.
[0254]
Further, FIG. 54 (C) shows the thickness distribution of the oxide film in the case of shifting the base point of the scanning by 25.0 mm downward from the center of the substrate in the y-axis direction in Å units. As can be seen from FIG. 54C, the variation in the thickness of the oxide film is 3.07%, which is the same as in FIG. 54B.
[0255]
On the other hand, FIG. 54 (D) shows the thickness distribution of the oxide film in the case of shifting the base point of the scanning by 37.5 mm downward from the center of the substrate in the y-axis direction in units of Å. As can be seen from FIG. 54D, in this case, the variation in the thickness of the oxide film is reduced to 2.70%.
[0256]
On the other hand, as shown in FIG. 54 (E), when the scanning base point is shifted by 50.0 mm downward from the center of the substrate in the y-axis direction, the thickness variation of the oxide film increases to 5.08%. .
[0257]
For this reason, in the substrate processing apparatus 320 of FIG. 51, by optimizing the scanning base of the ultraviolet light source 324B with respect to the substrate, the variation in the thickness of the oxide film formed on the substrate 322 to be processed can be minimized. It can be concluded that
[0258]
Next, FIGS. 55A to 55E show that in the substrate processing apparatus 320 shown in FIG. 51, the scanning distance of the ultraviolet light source 324B is set to 100 mm, and the base point of the scanning is 37. Set at a position shifted by 5 mm, and set the illuminance to 3 mW / cm², 6mW / cm², 12mW / cm², 18mW / cm²And 24mW / cm²The thickness distribution in the case where an oxide film is formed by setting to is shown in Δ units.
[0259]
Referring to FIGS. 55A to 55E, the variation in the film thickness is caused by the irradiation amount shown in FIG. 55A of 3 mW / cm.²It can be seen that the variation in the film thickness increases as the irradiation amount increases.
[0260]
The results of FIGS. 55A to 55E show that in the substrate processing apparatus 320 of FIG. 51, the variation in the thickness of the obtained oxide film can also be minimized by optimizing the illuminance of the ultraviolet light source 324B. ing.
[0261]
FIGS. 56 (A) and (B) show comparative examples, and FIG. 56 (A) shows a case where an oxide film is formed without performing ultraviolet light irradiation under the same conditions as in FIGS. 55 (A) to 55 (E). FIG. 56 (B) shows a case where an oxide film is formed by a conventional rapid thermal oxidation (RTO) treatment. It can be seen that a variation in film thickness of more than 4% is observed in each case.
[0262]
FIGS. 57 and 58 are flowcharts for searching for the optimum conditions of the substrate processing method in the substrate processing apparatus 320 of FIG. 51 based on the above results. Among them, FIG. 57 is a flowchart for searching for the optimal scanning area, and FIG. 58 is a flowchart for searching for the optimal illuminance.
[0263]
Referring to FIG. 57, first, an arbitrary area on the substrate to be processed is specified in step 71, and then, in step 72, the substrate to be processed 322 is introduced into the substrate processing apparatus 320, and the ultraviolet light source 324B is Scanning is performed in a designated area on the substrate to be processed 322 to form an oxide film. Further, by repeating the steps 71 and 72, an oxide film is formed on a new substrate to be processed 322 in a state where the region is shifted at each repetition.
[0264]
Further, in step 73, the film thickness distribution of the oxide film obtained in each experiment is evaluated, and in step 74, the optimum scanning region in which the film thickness variation is minimized is found.
[0265]
After searching for the optimum scanning condition in FIG. 57, a search for the optimum irradiation condition shown in FIG. 58 is performed.
[0266]
Referring to FIG. 58, first, at step 81, the optimum scanning area searched by the procedure of FIG. 57 is designated, and then, at step 82, the driving energy of the ultraviolet light source 224B is designated. Further, in step 83, the substrate to be processed 322 is introduced into the substrate processing apparatus 320, and the ultraviolet light source 324B is scanned in the specified optimum area on the substrate to be processed 322 with the driving energy specified in step 312, An oxide film is formed. Further, by repeating the steps 312 and 313, an oxide film is formed on a new substrate 322 with the driving energy shifted at each repetition.
[0267]
Further, in step 314, the film thickness distribution of the oxide film obtained in each experiment is evaluated, and the optimum driving energy of the ultraviolet light source 324B that minimizes the film thickness variation is found. Further, in step 315, a program for controlling the ultraviolet light source 324B of the substrate processing apparatus 320 is determined so that the film is formed at the optimum driving energy.
[0268]
The control device 325 operates the robot 324C and the ultraviolet light source 324B according to the program determined in this way, and as a result, the ultraviolet light source 324B scans an optimal substrate area with an optimal driving energy, and as a result, A very thin and uniform radical oxidation having a thickness of 0.3 to 1.5 nm, preferably 1 nm or less, more preferably 0.8 nm or less, for example, 0.4 nm on the substrate 324 to be processed. A film is formed in the same manner as in the previous embodiment.
[0269]
As described above, UV-O using the substrate processing apparatus 320 of FIG.₂When an oxide film is formed on the surface of the silicon substrate by the treatment, the growth of the oxide film stops and decreases when the thickness of the formed oxide film is 0.4 nm or in the range of 2 to 3 atomic layers. A silicon oxide film having a thickness can be formed stably and with good reproducibility. Therefore, by combining the oxide film thus formed with a high dielectric film, it is possible to realize a highly miniaturized high-speed MOS transistor in which the effective thickness of the gate insulating film is small. .
[0270]
In this embodiment, the oxide film is made of UV-O₂Although an oxide film formed by the treatment was used, the oxide film is not limited to such an oxide film, and any oxide film formed by an oxidation method capable of precisely performing oxidation with a low radical density can be used. It may be something.
[Eighth embodiment]
FIG. 59 shows a configuration of a MOS transistor 340 according to the eighth embodiment of the present invention.
[0271]
Referring to FIG. 59, a base oxide film 342 made of a silicon oxide film having a thickness of 2 to 3 atomic layers is formed on a silicon substrate 341, and ZrO 2 is formed on the base oxide film 342.₂, HfO₂, Ta₂O₅, Al₂O₃, ZrSiO₄, HfSiO₄A so-called high dielectric film 343 is formed. Further, on the high dielectric film 343, a gate electrode 344 made of polysilicon or other metal is formed. Although not shown, diffusion regions are formed in the silicon substrate 341 on both sides of the gate electrode 344.
[0272]
FIG. 60 shows a configuration of a cluster type substrate processing system 350 used for manufacturing the MOS transistor of FIG.
[0273]
Referring to FIG. 60, the substrate processing system 350 is a cluster-type processing apparatus, and includes a load lock chamber 351 for loading / unloading a substrate, and a pretreatment chamber 352 for removing a natural oxide film and carbon contamination on the substrate surface. And UV-O comprising the substrate processing apparatus 320 of FIG.₂Processing chamber 353 and Ta on substrate₂O₅, Al₂O₃, ZrO₂, HfO₂, ZrSiO₄, HfSiO₄And a cooling chamber 355 for cooling the substrate are connected by a vacuum transfer chamber 356, and a transfer arm (not shown) is provided in the vacuum transfer chamber 356. Z) is provided.
[0274]
In operation, the substrate to be processed introduced into the load lock chamber 351 is introduced into the pretreatment chamber 352 along the path (1), and a natural oxide film and carbon contamination are removed. The substrate to be processed 352 from which the natural oxide film has been removed in the pre-processing chamber 352 passes through the UV-O along the path (2).₂After being introduced into the processing chamber 353, the base oxide film 342 shown in FIG. 59 is formed to have a uniform thickness of 2 to 3 atomic layers by the substrate processing apparatus 320 shown in FIG.
[0275]
Further, the UV-O₂The substrate to be processed having the base oxide film 342 formed in the processing chamber 353 is introduced into the CVD processing chamber 354 along the path (3), and the high dielectric gate insulating film 344 shown in FIG. 59 is formed on the base oxide film. Is done.
[0276]
Further, the substrate to be processed is moved from the CVD processing chamber 354 to the cooling chamber 355 along the path (4), cooled in the cooling chamber 355, and then returned to the load lock chamber 351 along the path (5). , Is carried out.
[0277]
In the substrate processing system 350 shown in FIG. 60, a pretreatment chamber in which the silicon substrate is planarized by high-temperature heat treatment in an Ar atmosphere may be provided separately.
[0278]
FIG. 61 shows UV-O₂FIG. 3 is a diagram illustrating conditions of a radical oxidation process performed in a processing chamber 53.
[0279]
Referring to FIG. 61, the horizontal axis represents the partial pressure in Torr of oxygen radicals excited by the ultraviolet light source 324B in the processing vessel 321 of FIG. 51 on a logarithmic scale, while the vertical axis represents the process after the start of the process. The process time until the stationary phenomenon shown in FIG. 8 starts to occur and the process time until the stationary phenomenon disappears are also shown on a logarithmic scale. The oxygen radical partial pressure on the horizontal axis corresponds to the oxygen radical density, and is determined by the driving power of the ultraviolet light source 324B or the ultraviolet light irradiation intensity and the ultraviolet light wavelength.
[0280]
Hereinafter, the relationship between the ultraviolet light irradiation intensity and the radical density will be described using an example in which an ultraviolet light wavelength of 172 nm is used.
[0281]
In the substrate processing apparatus 320 shown in FIG. 51, that is, in the processing chamber 353 of the substrate processing system 350 shown in FIG.²Is used as the above-mentioned ultraviolet light source 324B, and when the process pressure is maintained at 0.02 Torr (2.66 Pa) and oxygen gas at a flow rate of 150 SCCM is flowed into the processing vessel 321, the ultraviolet light source 324B becomes 4.34. × 10¹⁶/ Cm²Form a second photon flux. Considering the case where the light source 23 is a tubular lamp having a width of 2 cm and irradiating a silicon wafer having a diameter of 20 cm with this lamp, the average photon flux value on the silicon wafer surface is about 1/1 / of the photon flux value. 10, 4.34 × 10^Fifteencm-²It becomes.
[0282]
On the other hand, the absorption cross section of oxygen molecules for ultraviolet light having a wavelength of 172 nm is 6 × 10^-19cm²It is known that the formula I / I₀The transmittance of ultraviolet light in a process atmosphere given by = exp (-σnx) is determined to be 0.9916. Here, the process pressure is 0.02 Torr (2.66 Pa), and the gas molecule density n in the process atmosphere is 7.05 × 10¹⁴cm^-3The ultraviolet light traveled a distance of 20 cm in the processing container 23.
[0283]
Therefore, the amount of radicals corresponding to the amount of ultraviolet light absorbed by the process atmosphere while traveling a distance of 20 cm in the processing container 321 is calculated based on the photon flux value of 4.34 × 10 3 per unit area per unit time.^Fifteen/ Cm²Multiplied by the ratio of 0.0084 to 3.65 × 10¹³/ Cm²Seconds, and oxygen radicals are formed in the processing vessel 23 at the same rate.
[0284]
On the other hand, the flux of oxygen gas in the processing container 321 causes the area of the shower head 21B to be 314 cm.²Then, in terms of standard state volume, 7.98 × 10^-3cc / cm²-Seconds. This is 2.138 × 10¹⁷/ Cm²-Seconds. Therefore, the value of the flux ratio, 3.65 × 10¹³/2.138×10¹⁷= 1.71 x 10^-4From the above, the partial pressure of oxygen radicals generated under a process pressure of 0.02 Torr (2.66 Pa) is 3.42 × 10^-6Torr (= 1.71 × 10^-4× 0.02).
[0285]
As described above, when the light intensity is 100%, the oxygen gas flow rate is 150 SCCM, and the process pressure (= processing vessel internal pressure) is 0.02 Torr (2.66 Pa), the concentration of oxygen radicals formed in the processing vessel 321 is about 3. 42 × 10^-6Torr (4.54 × 10^-4Pa). By a similar procedure, it is possible to calculate the radical density for various other conditions.
[0286]
FIG. 61 shows the relationship between the radical density, that is, the radical partial pressure, and the period after the start of the substrate processing, in which the above-described stationary phenomenon in FIG. 5 occurs.
[0287]
Referring to FIG. 61, when the radical density in the processing container 321 is high, the stagnation phenomenon occurs immediately after the start of the process as in the case of FIG. Occurs after a long time. This is because, when the radical density is high, the oxide film formation rate is high and reaches a non-deposited film thickness of 0.4 nm in a short time, whereas when the radical density is low, the oxide film deposition rate is low, This corresponds to a situation where it takes a long time to reach a non-retaining film thickness of 0.4 nm.
[0288]
Similarly, the dwell time from the occurrence of the dwell phenomenon to its disappearance also varies depending on the radical density. The dwell time decreases when the radical density is high, and increases when the radical density is low.
[0289]
Considering the actual manufacturing process of a semiconductor device, if the process time until the stop phenomenon occurs is too long, the manufacturing throughput of the semiconductor device is reduced. Therefore, the radical density naturally has a lower limit. If the time during which the stagnation phenomenon continues is too short, an oxide film having a preferable thickness of 2 to 3 or 2 to 4 atomic layers cannot be formed stably, and therefore the radical density naturally has an upper limit.
[0290]
FIG. 61 shows an example in which the substrate is oxidized at 450 ° C. using ultraviolet light having a wavelength of 172 nm for the radical oxidation treatment. From this relationship, the lower limit of the radical partial pressure is set to the allowable process time of 5 minutes. (300 seconds) or less and 1 × 10^-4mTorr (133 × 10^-7Pa), the upper limit of the radical partial pressure is 1 mTorr (133 × 10^-3Pa). The corresponding ultraviolet light irradiation power is 5 to 50 mW / cm just below the window of the light source 23.²It becomes.
[0291]
In FIG. 61, the interval between the two straight lines representing the occurrence and disappearance of the stagnant phenomenon appears to increase as the radical partial pressure increases, but the vertical and horizontal axes in FIG. 61 are plotted logarithmically. Therefore, the value of the dwell time corresponding to the interval actually decreases with the radical partial pressure.
[0292]
UV-O above₂During the process, the oxygen gas partial pressure is 6.65 × 10^-3The pressure is preferably set in the range of Pa to 133 Pa (0.05 to 1000 mTorr), more preferably 1.33 to 13.3 Pa (10 to 100 mTorr).
[0293]
Note that radical oxidation using the substrate processing apparatus 320 in FIG. 51 can be performed using ultraviolet light of another wavelength. In this case, considering the absorption of ultraviolet light by the atmospheric gas, the 1 × 10^-4mTorr (1.33 × 10^-2In order to realize a radical density of not less than mPa) and not more than 1 mTorr (133 mPa), it is necessary to change the driving energy of the ultraviolet light source 324B or the composition of the atmosphere gas.
[0294]
For example, when an ultraviolet light source having a wavelength of 146 nm is used as the ultraviolet light source 324B, the oxygen partial pressure in the atmosphere is set to 0.05 to 50 mTorr (6. 7 mPa to 6.7 Pa).
[0295]
The oxide film having a thickness of 2 to 3 atomic layers formed as described above can be nitrided by nitrogen radicals and converted to an oxynitride film. Since the oxynitride film thus formed has a higher dielectric constant than the silicon oxide film, the equivalent oxide thickness of the gate insulating film of the MOS transistor can be further reduced.
[Ninth embodiment]
Hereinafter, a ninth embodiment of the present invention will be described.
[0296]
In this embodiment, an oxynitride film is directly formed on the surface of a silicon substrate by the same UV-NO radical treatment as described above using the substrate processing apparatus 320 shown in FIG. A similar result can be obtained in the substrate processing apparatus 20 of FIG. 3 described above.
[0297]
FIG. 62A shows an oxide film formed to a thickness of 0.4 nm on a silicon substrate using the substrate processing apparatus 320 of FIG. 51, and then, in the substrate processing apparatus 320 of FIG. 4 shows a film thickness distribution obtained by ellipsometry when oxynitriding by supplying a gas. Table 5 below shows that the actual film thickness at the center and the periphery in the substrate of FIG. 62A was measured by setting the detection angle to 90 ° in the XPS method described above and lowering the resolution to obtain SiO 2.⁺And Si⁴⁺Shows the results obtained simply from the ratio of the peaks corresponding to. However, in the oxynitriding process, the NO light is supplied to the shower head 321B at a flow rate of 200 SCCM, and while maintaining the internal pressure of the processing container 321 at 3.99 Pa (0.03 Torr), the ultraviolet light source 24B is set at the above-described reference intensity. Go by driving for minutes. The substrate temperature is set at 450 ° C.
[0298]
[Table 5]

Referring to FIG. 62 (A) and Table 5, the film thickness after the oxynitriding treatment is 0.43 to 0.49 nm in both the central part and the peripheral part of the substrate, and the initial film thickness is about 0%. It can be seen that there is almost no change from 0.4 nm. Further, for the oxide film thus treated, an attempt was made to detect nitrogen by XPS analysis, but no signal from a nitrogen atom was detected. This means that the nitriding of the oxide film has not progressed at all in the oxynitriding process.
[0299]
FIG. 62 (B) shows the film thickness distribution after oxynitriding obtained by ellipsometry when an oxide film was formed to a thickness of 0.7 nm on the silicon substrate surface under the same conditions. Shows the actual film thickness obtained by setting the detection angle to 90 ° by the XPS method for the central portion and the peripheral portion of the substrate.
[0300]
[Table 6]

Referring to FIG. 62 (B) and Table 6, in this case as well, the film thickness after the oxynitriding treatment is 0.69 to 0.68 nm in both the central part and the peripheral part of the substrate. It can be seen that there is almost no change from about 0.7 nm. An attempt was made to detect nitrogen in the oxide film thus treated by XPS analysis, but no signal from a nitrogen atom was detected.
[0301]
From the results in Table 6 and the results in Table 5 above, in the oxynitriding of the oxide film already formed on the silicon substrate surface by the UV radical NO treatment, no matter how small the thickness of the oxide film, the nitrogen Can not be introduced.
[0302]
On the other hand, FIG. 63A shows an ellipsometry of a film formed on the silicon substrate surface when the silicon substrate from which the natural oxide film has been removed is directly subjected to UV radical NO treatment in the substrate processing apparatus 320 of FIG. Table 3 shows the results obtained by setting the detection angle to 90 ° by the XPS method for the film thickness at the center and the periphery of the substrate of the film thus obtained. Show. However, in the experiment of FIG. 63A, in the substrate processing apparatus 320 of FIG. 51, NO gas is supplied to the shower head 321B at a flow rate of 200 SCCM, and the internal pressure of the processing container 321 is set to 3.99 Pa (0. This is performed by driving the ultraviolet light source 324B at the reference intensity for 3 minutes while maintaining the pressure at 03 Torr). The substrate temperature is set at 450 ° C.
[0303]
Referring to FIG. 63 (A), a film having a substantially uniform thickness is formed on the surface of the silicon substrate. According to Table 7, the film thickness is about 0 at both the central portion and the peripheral portion of the substrate. It turns out that it is about 0.5 nm.
[0304]
[Table 7]

FIG. 63 (B) shows the case where the oxynitriding treatment was performed by setting the flow rate of the NO gas to 1 SLM and driving the ultraviolet light source 24B under the pressure of 665 Pa (5 Torr) at the reference intensity for 1 minute. 3 shows a film thickness distribution by ellipsometry. Further, Table 8 below shows the results of the film thickness measurement by the XPS method performed on the film obtained in this way at the central portion and the peripheral portion of the substrate at a detection angle of 90 °.
[0305]
[Table 8]

Referring to FIG. 63 (B), it can be seen that the film thickness distribution of the film formed on the substrate surface is almost uniform in this case as well. It can be seen that the thickness is also about 0.5 nm in the part.
[0306]
Table 9 below shows the results of elemental analysis performed by the XPS method on the film obtained by the experiment in FIG.
[0307]
[Table 9]

Referring to Table 9, in the film thus formed, O_1sSignal corresponding to the orbit, N_1sSignal corresponding to the orbit, and Si_2pA signal corresponding to the orbit was observed, and in the measurement with the detection angle set to 90 °, the oxygen atom concentration was 67.23%, the nitrogen atom concentration was 11.18%, and the silicon atom concentration was 21.59% at the center of the substrate. Was confirmed. Also at the peripheral portion of the substrate, it was confirmed that the oxygen atom concentration was 66.88%, the nitrogen atom concentration was 9.13%, and the silicon atom concentration was 24.23%. That is, it was confirmed that the film thus formed was an oxynitride film containing nitrogen.
[0308]
Similarly, Table 10 below shows the results of elemental analysis performed by the XPS method on the film obtained by the experiment in FIG.
[0309]
[Table 10]

Referring to Table 10, even in the film thus formed, O_1sSignal corresponding to the orbit, N_1sSignal corresponding to activation, and Si_2pA signal corresponding to the orbit was observed, and in the measurement with the detection angle set to 90 °, the oxygen atom concentration was 67.3%, the nitrogen atom concentration was 11.66%, and the silicon atom concentration was 21.24% at the center of the substrate. Was confirmed. Also in the peripheral portion of the substrate, the oxygen atom concentration was 67.2%, the nitrogen atom concentration was 11.44%, and the silicon atom concentration was 21.37%, and the composition in the film was more uniform than in the case of Table 5 above. Has been confirmed. That is, also in this case, an oxynitride film having a uniform composition is formed on the surface of the silicon substrate.
[0310]
By the way, in Table 10 above, in the measurement performed with the detection angle of the XPS spectrum set to 30 °, the nitrogen concentration at both the central part and the peripheral part of the substrate was slightly smaller than that when measured at the detection angle of 90 °. Can be seen. In the measurement where the detection angle is set to be shallow, the signal due to the photoelectrons emitted at the lower part of the oxynitride film is attenuated when obliquely passing through the film. Therefore, the results in Table 10 show that in the oxynitride film thus formed, nitrogen atoms are relatively concentrated near the interface with the silicon substrate. A similar tendency is observed in the analysis results at the center of the substrate in Table 9.
[0311]
Next, the kinetics of forming an oxynitride film on the silicon substrate surface by UV-NO processing will be described.
[0312]
FIGS. 64A and 64B show 450 ° C. in the substrate processing apparatus 320 of FIG. 3 while supplying NO gas to the shower head 321B at a flow rate of 200 SCCM and maintaining the processing pressure at 3.99 Pa (20 mTorr). 5 shows the thickness of the oxynitride film and the nitrogen concentration in the film when the ultraviolet light source 324B is driven at the reference power and the driving time is variously changed.
[0313]
Referring to FIG. 64 (A), the thickness of the oxynitride film increases with time. When the thickness of the oxynitride film reaches about 0.5 nm, the thickness is similar to that described with reference to FIGS. It can be seen that a stop phenomenon of the film growth has occurred. In FIG. 64 (A), the symbol ○ indicates the case where the ultraviolet light source 324B was not driven during such a nitriding treatment. In this case, as can be seen from FIG. 64A, no growth of the oxynitride film has occurred.
[0314]
On the other hand, from FIG. 64 (B), immediately after the start of the oxynitriding process, the nitrogen concentration when the detection angle of the XPS analysis is set to 30 ° appears smaller than that when the detection angle is set to 90 °, It can be seen that nitrogen atoms are concentrated near the interface between the oxynitride film and the silicon substrate. From FIG. 64B, it can be seen that the non-uniformity of the nitrogen distribution in the film thickness direction is gradually eliminated by continuing the oxynitriding treatment.
[0315]
The result in FIG. 64B shows that an oxynitride film having a high nitrogen concentration is formed immediately after the start of the nitriding treatment, but the nitrogen concentration in the film decreases with time, and the film growth mechanism gradually decreases with time. It turns out that it has shifted to the oxidation reaction main body. About 200 seconds after the start of the treatment, the non-uniformity of the nitrogen concentration in the film thickness direction has been eliminated.
[0316]
FIGS. 65A and 65B correspond to FIGS. 64A and 64B, respectively. In the oxynitriding process, the driving power of the ultraviolet light source 324B is set to 20% of the reference power. In this case, the same results as those shown in FIGS. 64A and 64B are obtained. That is, the stopping phenomenon of the film growth occurs when the thickness of the oxynitride film reaches about 0.5 nm, and an oxynitride film having a high nitrogen concentration is formed at the beginning of the film growth, and the nitrogen atoms are reduced. It can be seen that it is concentrated near the interface between the oxynitride film and the silicon substrate.
[0317]
On the other hand, FIGS. 66A and 66B show the relationship between the film thickness and the processing time when the similar oxynitriding treatment of the silicon substrate surface is performed with the substrate temperature set to 550 ° C. The relationship between the nitrogen concentration distribution and the processing time is shown.
[0318]
First, referring to FIG. 66 (B), the concentration of nitrogen atoms incorporated in the film is shown in FIG. 64 (B) regardless of whether the detection angle in the XPS analysis is set to 90 ° or 30 °. ) Or substantially less than in the case of FIG. 65 (B), and thus it can be seen that the formed oxynitride film has a composition closer to the oxide film. This is probably due to the fact that the substrate temperature at the time of the oxynitriding treatment was set to 550 ° C., so that the oxidation action by the oxygen remaining in the processing container 321 was promoted.
[0319]
In FIG. 66A, since the formed oxynitride film has a composition closer to the oxide film, the stop of the film growth is caused by the stop of the film growth of the oxide film described with reference to FIGS. It is considered that this occurs at a film thickness of about 0.46 nm, which is closer to 0.4 nm.
[0320]
In this embodiment, the thickness of the oxynitride film is obtained by using the above-described equation (1) and the parameters associated therewith. However, this is an equation derived for the oxide film. In the case of a film, the film thickness value may be calculated to be slightly larger due to the effect of the escape depth of photoelectrons. In any case, it is considered that the oxynitride film formed in the present invention has a thickness controlled to about 2 atomic layers.
[0321]
When the substrate processing apparatus 320 shown in FIG. 51 is applied to the oxynitriding of a silicon substrate, the ultraviolet light source 324B may be formed of ultraviolet light having a wavelength range of 192 to 145 nm based on the same considerations as performed in FIG. It is preferable to use a light source capable of forming
[0322]
Considering that the substrate processing apparatus 320 of FIG. 51 is applied to a single-wafer-type semiconductor manufacturing process, it is preferable that such a light source 324B can be turned on and off at any time. At present, excimer lamps having wavelengths of 308 nm, 222 nm, 172 nm, 146 nm, and 126 nm are commercially available as ultraviolet light sources that can be turned on and off at any time and have a sharp spectrum. Among them, lamps satisfying the above conditions are limited to those having a wavelength of 172 nm and 146 nm. Among them, an excimer lamp having a wavelength of 146 nm has a half-width of about 13 nm, and therefore, a part of the spectrum becomes 145 nm or less. Depending on the state of the lamp and individual differences, it is not always the case that oxygen radicals are not excited. . For this reason, when a commercially available excimer lamp is used as the ultraviolet light source 324B in the substrate processing apparatus 320 of FIG. 51, it is preferable to use one having a wavelength of 172 nm.
[0323]
FIG. 67 shows a schematic configuration of an excimer lamp (dielectric barrier discharge tube) 341 that generates such 172 nm ultraviolet light (see JP-A-7-196303 or JP-A-8-85861).
[0324]
Referring to FIG. 67, the excimer lamp 341 has a double cylindrical container including an inner quartz tube 342 and an outer quartz tube 343, and a space 347 between the inner quartz tube 342 and the outer quartz tube 343 is provided. , Xe gas are sealed at a pressure of 33.25 kPa (250 Torr). Further, an aluminum thin-film electrode 345 is formed on the inner side surface of the inner quartz tube 342, and a mesh-shaped electrode 344 is formed outside the outer quartz tube 345. A getter chamber 348 is formed at an axial end of the space 347, and a getter 346 is provided in the getter chamber 348. The excimer lamp 341 can be freely turned on and off by applying an AC voltage between the electrode 344 and the electrode 345 by the power supply 350.
[0325]
As such an excimer lamp, for example, a type UER20-172 available from Ushio Inc. or a type HES1703S available from Hoya Shott can be used.
[0326]
Of course, the ultraviolet light source is not limited to the above-described excimer lamp, and it is also possible to use a low-pressure mercury lamp or an excimer laser in some cases.
[Tenth embodiment]
Next, a description will be given of an in-wafer uniform film forming process of an oxynitride film by UV-NO processing according to a tenth embodiment of the present invention.
[0327]
Referring again to Table 7 above, in the oxynitride film formed under the conditions of the processing pressure of 3.99 pa (0.03 torr) and the UV light power of 100%, the film thickness is substantially the same at the center and the periphery of the wafer. However, there is a difference of about 2 at% in the nitrogen concentration shown in Table 9, indicating that the nitrogen concentration distribution is non-uniform. The results in Table 9 show that in forming an oxynitride film by UV-NO treatment, it is an important issue to achieve both film thickness and uniformity of nitrogen concentration.
[0328]
FIG. 68A shows a film thickness distribution obtained by an ellipsometer measurement on an oxynitride film formed under the same conditions as described above except that the oxynitridation time is set to 1 minute 30 seconds. On the other hand, FIG. 68 (B) shows the film thickness distribution when the oxynitride film is formed under exactly the same conditions, but with reciprocating ultraviolet lamps. In FIGS. 68A and 68B, the number of measurement points in the wafer surface has been increased to 17 points. The reciprocating motion of the ultraviolet lamp in the experiment of FIG. 68 (B) is performed by moving the ultraviolet lamp at a speed of 60 mm / sec from one wafer edge to the other wafer edge at a distance of 200 mm from the other wafer edge at a turning point for 0.1 second. This is performed in a sequence in which the wafer is stopped and the wafer is stopped for one second at the center of the wafer.
[0329]
68 (A) and FIG. 68 (B), the experiment shown in FIG. 68 (B) adopts the above-described reciprocating motion sequence of the ultraviolet lamp, so that the film thickness distribution is larger than that in the experiment of FIG. 68 (A). Is more uniform.
[0330]
Tables 11 and 12 show the results of measuring the film thickness of the samples of FIGS. 68 (A) and 68 (B) by the XPS method for accuracy. However, in Tables 11 and 12, the peripheral portion was measured at two points. Regarding the nitrogen concentration, Table 13 shows the measurement results corresponding to the sample in FIG. 68A, and Table 14 shows the measurement results corresponding to the sample in FIG.
[0331]
[Table 11]

[0332]
[Table 12]

[0333]
[Table 13]

[0334]
[Table 14]

Comparing these results, by reciprocating the ultraviolet lamp, it is possible to form a film having a uniform film thickness at the central portion and the peripheral portion of the wafer, and it is possible to realize a uniform distribution of the nitrogen concentration. You can see that. The above results show that the reciprocating movement of the ultraviolet lamp makes the amount of ultraviolet irradiation uniform on the wafer surface.
[Eleventh embodiment]
FIG. 69A shows an introduction sequence of the NO gas used in the ninth to tenth embodiments of the present invention, together with the temperature profile T.
[0335]
Referring to FIG. 69 (A), the temperature of the substrate 322 is started at the same time when the substrate to be processed 322 is carried into the processing container 321. In this sequence, the temperature in the processing container 321 is initially increased. Nitrogen gas has been introduced, and is switched to NO gas when a predetermined holding temperature is reached. Further, in a state where the concentration of the NO gas has reached a predetermined value in the processing container 321, the ultraviolet light source 324 </ b> B is driven for a predetermined time, and the above-described UV-NO processing is performed.
[0336]
Thereafter, the ultraviolet light source 324B is turned off, the supply of NO gas is shut off, and the substrate 322 is unloaded from the processing vessel 321 when the substrate temperature T has dropped to room temperature.
[0337]
On the other hand, FIG. 69 (B) shows a NO gas introduction sequence according to the eleventh embodiment of the present invention which is used in the substrate processing apparatus 320 of FIG. 51 instead of the sequence of FIG. 69 (A).
[0338]
Referring to FIG. 69 (B), in this embodiment, the temperature of the substrate 322 is started simultaneously with the loading of the substrate 322 into the processing vessel 321 in this embodiment. At the same time, the introduction of NO gas is started, and when the substrate temperature T reaches a predetermined value, the ultraviolet light source 324B is driven for a predetermined time to perform a desired UV-NO process.
[0339]
Thereafter, the ultraviolet light source 324B is turned off, the supply of NO gas is shut off, and the substrate 322 is unloaded from the processing vessel 321 when the substrate temperature T has dropped to room temperature.
[0340]
FIGS. 70A and 70B show the processing temperature, the oxynitride film thickness, the processing temperature, and the nitrogen concentration in the oxynitride film, respectively, when the NO gas introduction sequence of FIGS. 69A and 69B is used. Shows the relationship. However, in FIGS. 70A and 70B, ● shows the case where the NO introduction sequence of FIG. 69 (A) is used, and ○ shows the case where the NO introduction sequence of FIG. 69 (B) is used.
[0341]
Referring to FIG. 70A, when the substrate processing temperature is 500 ° C. or less, the NO introduction sequence shown in FIG. 69B or the NO introduction sequence shown in FIG. Although there is no substantial difference in the thickness of the formed oxynitride film, when the substrate processing temperature exceeds 500 ° C., the thickness of the oxynitride film obtained by using the sequence of FIG. It can be seen that it increases.
[0342]
Comparing this result with the value of the nitrogen concentration in the film in FIG. 70B, when the substrate processing temperature exceeds 500 ° C., the nitrogen atom concentration in the film is reduced by using the NO introduction sequence in FIG. 69B. 70A. The increase in the thickness of the oxynitride film shown in FIG. 70A is mainly caused by nitrogen atoms introduced into the oxynitride film.
[0343]
Thus, by introducing the NO gas into the processing container prior to the processing, a large amount of nitrogen atoms can be introduced into the oxynitride film by the UV-NO processing.
[0344]
The NO gas introduction sequence shown in FIGS. 69A and 69B can be used in the substrate processing apparatus 20 shown in FIG. 3, and the same effect can be obtained.
[Twelfth embodiment]
FIGS. 71 (A) to 72 (E) show a process of manufacturing a semiconductor device according to the twelfth embodiment of the present invention.
[0345]
Referring to FIG. 71A, surface 331c of silicon substrate 331 having diffusion regions 331a and 331b formed by ion-implanting an impurity element is exposed at openings 337 formed in insulating films 335 and 336. You.
[0346]
The exposed surface 331c is subjected to the removal of the natural oxide film, and is further subjected to UV-NO treatment with ultraviolet light having a wavelength of 172 nm in the substrate processing apparatus 320 of FIG. 51 under the conditions described above. As a result, as shown in FIG. 71 (B), a SiON film 332 having a thickness of about 0.5 nm is uniformly formed on the surface of the silicon substrate 331 by the above-described film deposition stop phenomenon.
[0347]
Next, in the step of FIG. 71 (C), ZrSiO is formed on the SiON film 332 by the CVD method._xAnd HfSiO_x, Or ZrO₂And HfO₂, Ta₂O₅, Al₂O₃A high dielectric film 333 such as is deposited.
[0348]
Further, a metal electrode layer 334 is deposited on the high dielectric film 333 thus formed in the step of FIG. 72 (D), and this is etched back in the step of FIG. 72 (E) to form a metal gate electrode 334G. To form
[0349]
In this embodiment, the UV-NO oxynitriding step in FIG. 71A is preferably performed at a temperature not exceeding 550 ° C., and the processing pressure at that time is 1.33 to 1.33 × 10 3³It is preferable to set in the range of Pa.
[Thirteenth embodiment]
By the way, when measuring the film thickness of a very thin film formed on the wafer surface by ellipsometry, an apparently large film thickness value may be obtained due to organic molecules adsorbed on the wafer surface during the measurement. There is. In particular, in a multi-point measurement, the measurement value tends to change due to such circumstances until the measurement is completed, and it is difficult to obtain accurate uniformity.
[0350]
In view of such circumstances, the inventor of the present invention has improved a method of measuring a film thickness in order to ensure the uniformity of the film thickness.
[0351]
More specifically, in the improvement by the present inventor, the entire path from the substrate entrance of the film forming apparatus to the wafer mounting part of the ellipsometer is arranged under the down flow of the chemical filter for removing organic molecules. . With such a configuration, the apparent increase in film thickness can be suppressed to about 0.02 nm (0.2 °) even when the wafer is left for 3 hours in an atmosphere used for measurement.
[0352]
When such an ellipsometer is used, the measurement time required to measure the film thickness at 49 points on the wafer surface is about 10 minutes, and the apparent increase in the film thickness during this period is about 0.001 nm (0.01 °). It is estimated. In addition, it has been confirmed that the capability of the measuring apparatus is 0.006 nm (0.06 °) in terms of the dispersion value σ when viewed from the reproducibility at the time of repeated measurement at a fixed point.
[0353]
FIG. 76 shows a 0.5-nm-thick oxynitride film formed by the above-described UV-NO process on a wafer having a diameter of 200 mm under the above-described film-forming conditions under such a measurement environment. The results of measuring the film thickness at 49 points are shown.
[0354]
Referring to FIG. 76, the dispersion value σ of the in-plane film thickness is 0.65%, that is, approximately 0.0065 nm (0.065 °) in terms of film thickness, and the variation of the film thickness is comparable to the measurement limit. It can be seen that it has decreased to the extent that it does. This indicates that a substantially completely uniform oxynitride film was obtained in the plane of the wafer having a diameter of 200 mm.
[0355]
In addition, the UV-O mentioned above₂When the same measurement is performed on the oxide film obtained by the treatment, it is found that a very excellent uniformity is obtained, in which the dispersion value σ of the film thickness is about 0.7% when the oxide film has a thickness of 0.4 nm. Has been confirmed.
[0356]
As described above, the present invention has been described with reference to the preferred embodiments. However, the present invention is not limited to the above-described specific embodiments, and various modifications and changes can be made within the scope of the claims.
[0357]
【The invention's effect】
According to the present invention, an extremely thin oxide film surface can be stably and reproducibly nitrided to form an oxynitride film using nitrogen radicals excited by high-frequency plasma. Become. Further, according to the present invention, a very thin oxynitride film surface is stably and reproducibly nitrided to form an oxynitride film having a high nitrogen concentration to a desired thickness by using nitrogen radicals excited by high frequency plasma. It becomes possible. In particular, since the nitriding treatment is performed at a relatively high processing pressure by using high-frequency plasma, by first sufficiently reducing the pressure in the processing vessel, residual oxygen or other impurity gas components in the processing vessel can be reduced by the nitriding treatment. In such a case, it is diluted by the plasma gas, and it is possible to effectively suppress unnecessary oxidation due to residual oxygen and the accompanying problem of increasing the thickness of the oxynitride film. In particular, according to the present invention, a very thin base oxide film formed under a high-k gate insulating film can be nitrided, and as a result, a high-k gate insulating film can be formed on the base oxide film. In this case, the interdiffusion of the metal element and silicon between the silicon substrate and the high-dielectric gate insulating film and the formation of a transition layer due to this can be suppressed.
[0358]
In addition, in the nitridation treatment of an insulating film such as an oxide film or an oxynitride film, which is required to have a very small film thickness, an increase in the thickness of the insulating film due to the introduction of nitrogen atoms is inevitable. By setting the thickness of the insulating film before the nitriding treatment to be equal to or less than 2 to 4 atomic layers, the thickness of the insulating film after the nitriding treatment, that is, the thickness of the oxynitride film can be extremely reduced. is there.
[0359]
Further, according to the present invention, ultraviolet-excited radical oxidation of a silicon substrate in the same substrate processing apparatus and radicals using high-frequency remote plasma of an oxide film formed by the ultraviolet-excited radical oxidation are performed. The nitriding treatment can be performed continuously. Although the processing pressure is significantly different between the ultraviolet light excited radical oxidation treatment and the high-frequency remote plasma radical nitridation treatment, the substrate treatment apparatus of the present invention provides two exhaust paths in the treatment vessel so that these treatments can be performed in the same treatment vessel. It is possible to do. In particular, according to the present invention, a very thin base oxide film formed under a high-k gate insulating film can be nitrided, and as a result, a high-k gate insulating film can be formed on the base oxide film. In this case, the interdiffusion of the metal element and silicon between the silicon substrate and the high-dielectric gate insulating film and the formation of a transition layer due to this can be suppressed. Further, according to the present invention, the positions of the first and second exhaust paths in the processing container are set such that the turbo-molecular pump required for realizing a high vacuum in the processing container is located at the outer end of the processing container. With this setting, the substrate processing apparatus can be connected to the substrate transport path at the inner end thereof, and a cluster-type substrate processing apparatus can be easily constructed.
[0360]
According to the present invention, an extremely thin oxide film effective as a base oxide film provided between a silicon substrate and a high dielectric gate insulating film is formed by radical oxidation of the silicon substrate surface. It is possible to form a uniform thickness and high reproducibility by utilizing the stopping effect of the film growth that is developed when the thickness of the oxide film reaches the thickness of 2 to 4 atomic layers. .
[0361]
Further, according to the present invention, it is possible to form an oxynitride film directly on the surface of the silicon substrate by exciting the NO atmosphere with ultraviolet light. In this case, in particular, by setting the ultraviolet light wavelength to be longer than 145 nm and equal to or less than 192 nm, for example, 172 nm, the oxidizing action can be suppressed, and an oxynitride film having a high nitrogen concentration can be formed. In such an oxynitride film, when the film is formed, the film formation stops at a film thickness of about 0.5 nm corresponding to the thickness of two atomic layers. It becomes possible to form well.
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration of a semiconductor device having a high dielectric gate insulating film.
FIG. 2 Conventional UV-O₂FIG. 3 is a diagram illustrating a configuration of a radical substrate processing apparatus.
FIG. 3 is a diagram illustrating a configuration of a substrate processing apparatus according to a first embodiment of the present invention.
FIGS. 4A and 4B are a side view and a plan view, respectively, showing a substrate oxidation process performed using the substrate processing apparatus of FIG. 3;
FIG. 5 is a view showing a substrate oxidation treatment step performed using the substrate processing apparatus of FIG. 3;
FIG. 6 is a view showing a method of measuring a film thickness by XPS used in the present invention.
FIG. 7 is another diagram showing a method of measuring a film thickness by XPS used in the present invention.
FIG. 8 is a diagram schematically showing a stop phenomenon of oxide film thickness growth observed when an oxide film is formed by the substrate processing apparatus of FIG. 3;
FIGS. 9A and 9B are diagrams showing a process of forming an oxide film on the surface of a silicon substrate.
FIG. 10 is a view showing a leakage current characteristic of an oxide film obtained in the first embodiment of the present invention.
FIGS. 11A and 11B are diagrams for explaining the cause of the leak current characteristic in FIG. 10;
FIGS. 12A to 12C are diagrams showing an oxide film forming step occurring in the substrate processing apparatus of FIG. 3;
FIG. 13 is a diagram showing a configuration of a remote plasma source used in the substrate processing apparatus of FIG.
14A to 14C are diagrams for comparing characteristics of RF remote plasma and microwave plasma, and diagrams showing configurations of a standard remote plasma source and a microwave plasma source, respectively.
FIG. 15 is another diagram comparing characteristics of RF remote plasma and microwave plasma.
FIGS. 16A and 16B are a side view and a plan view, respectively, showing an oxide film nitriding process performed by using the substrate processing apparatus of FIG.
FIGS. 17A and 17B are diagrams showing a relationship between a nitrogen concentration and a film thickness in an oxide film nitrided by RF remote plasma in comparison with a case where nitriding is performed by microwave plasma; .
FIG. 18 is a diagram showing an outline of XPS used in the present invention.
FIG. 19 is a diagram showing a relationship between nitriding time of an oxide film by remote plasma and nitrogen concentration in the film.
FIG. 20 is a diagram showing the relationship between the nitriding time of an oxide film and the distribution of nitrogen in the film.
FIG. 21 is a diagram showing a variation in film thickness of each oxynitride film formed by nitriding an oxide film for each wafer.
FIG. 22 is a diagram showing an increase in film thickness due to nitriding of an oxide film according to the first embodiment of the present invention.
FIGS. 23A and 23B are diagrams showing in-plane uniformity of a nitriding process realized in the substrate processing apparatus of FIG. 3;
FIG. 24: UV-O₂FIG. 4 is a diagram showing a relationship between an increase in film thickness due to RF nitridation of an oxide film or a UV-NO oxynitride film and a nitrogen concentration in the film.
FIG. 25: UV-O₂5 is a flowchart showing an RF nitriding process of an oxide film.
FIGS. 26 (A) to (C) show the results of forming a high dielectric film on an oxynitride film obtained in the first embodiment of the present invention._2pIt is a figure which shows the chemical shift which appears in the XPS spectrum of an orbit.
FIG. 27 is a diagram showing, in comparison, before and after formation of a high dielectric film, an increase in the thickness of the oxynitride film obtained in the first embodiment of the present invention.
FIGS. 28A and 28B are flowcharts showing a substrate processing method according to a second embodiment of the present invention.
FIGS. 29A and 29B are diagrams showing the film thickness and the nitrogen concentration in the oxynitride film formed by the steps of FIGS. 28A and 28B, respectively.
FIGS. 30A and 30B are flowcharts showing a substrate processing method according to a comparative example of the second embodiment of the present invention.
FIGS. 31A and 31B are diagrams showing the film thickness and the nitrogen concentration in the oxynitride film formed by the steps of FIGS. 30A and 30B, respectively.
FIG. 32 is a flowchart illustrating a substrate processing method according to a third embodiment of the present invention.
FIGS. 33A and 33B are diagrams showing the thickness of the oxynitride film formed by the substrate processing method of the third embodiment of the present invention and the thickness of the oxynitride film according to the comparative example. .
FIG. 34 is a diagram showing potential curves of NO molecules in various excited states.
FIG. 35 is a flowchart illustrating RF nitridation of a UV-NO oxide film according to a fourth embodiment of the present invention.
FIG. 36 is a diagram showing a distribution of nitrogen atoms in the oxynitride film obtained by the process of FIG. 35;
FIGS. 37A and 37B are diagrams illustrating an example of a distribution state of nitrogen atoms in an oxynitride film.
FIG. 38 is a diagram illustrating a problem when a cluster-type substrate processing system is configured using the substrate processing apparatus of FIG. 3;
FIGS. 39A and 39B are diagrams showing a configuration of a cluster type substrate processing system according to a fifth embodiment of the present invention.
40 (A) and (B) are diagrams showing an oxidation process of a substrate by the substrate processing system of FIG. 39.
FIGS. 41A and 41B are diagrams showing a nitriding process of a substrate by the substrate processing system of FIG. 39;
FIG. 42 is a diagram showing a configuration of a semiconductor device according to a sixth embodiment of the present invention.
FIG. 43 is a flowchart illustrating a substrate processing method according to a sixth embodiment of the present invention.
FIG. 44 is a view for explaining a film thickness distribution of an initial oxide film used in a sixth embodiment of the present invention.
FIGS. 45A to 45C are diagrams illustrating a film thickness distribution of an oxynitride film formed according to a sixth embodiment of the present invention.
FIGS. 46A to 46D are diagrams illustrating the kinetics of the oxynitride film forming process according to the sixth embodiment of the present invention.
FIGS. 47A to 47D are other views for explaining the kinetics of the oxynitride film forming process according to the sixth embodiment of the present invention.
FIGS. 48A and 48B are views showing a nitrogen doping mechanism of an oxide film in forming an oxynitride film according to a sixth embodiment of the present invention.
FIGS. 49A and 49B are views showing the distribution of nitrogen atoms in the oxynitride film formed according to the sixth embodiment of the present invention, together with the distribution of oxygen atoms and Si atoms.
FIGS. 50A and 50B are other views showing the distribution of nitrogen atoms in the oxynitride film formed according to the sixth embodiment of the present invention, together with the distribution of oxygen atoms and Si atoms.
FIG. 51 is a view showing a configuration of a substrate processing apparatus used in a seventh embodiment of the present invention.
52 (A) to 52 (C) are diagrams each showing a film thickness distribution of an oxide film formed using the substrate processing apparatus of FIG. 51.
FIG. 53 is a view showing a relationship between a processing time and a film thickness of an oxide film formed using the substrate processing apparatus of FIG. 51.
FIGS. 54 (A) to 54 (E) are other views showing a film thickness distribution of an oxide film formed using the substrate processing apparatus of FIG. 51.
FIGS. 55 (A) to (E) are still other views showing the film thickness distribution of the oxide film formed by using the substrate processing apparatus of FIG. 51.
FIGS. 56A and 56B are diagrams showing a film thickness distribution of an oxide film according to a comparative example.
FIG. 57 is a flowchart showing an optimal scanning area determination procedure of the substrate processing apparatus of FIG. 51.
FIG. 58 is a flowchart showing a procedure for determining an optimum light source driving energy of the substrate processing apparatus of FIG. 51.
FIG. 59 is a diagram showing a configuration of a semiconductor device according to an eighth embodiment of the present invention.
FIG. 60 is a diagram showing a configuration of a cluster type substrate processing system used in an eighth embodiment of the present invention.
FIG. 61 is a diagram for determining process conditions used in an eighth embodiment of the present invention.
FIGS. 62A and 62B are diagrams showing a film thickness distribution when an oxide film formed on the surface of a silicon substrate is subjected to UV-NO nitridation in a ninth embodiment of the present invention.
FIGS. 63 (A) and (B) are diagrams showing a film thickness distribution when an oxynitride film is directly formed on a silicon substrate surface by UV-NO nitridation in the ninth embodiment of the present invention. .
FIGS. 64A and 64B are diagrams showing the kinetics of forming an oxynitride film on a silicon substrate surface by UV-NO nitridation according to a ninth embodiment of the present invention.
FIGS. 65 (A) and (B) are other views showing the kinetics of forming an oxynitride film on a silicon substrate surface by UV-NO nitridation according to the ninth embodiment of the present invention.
FIGS. 66 (A) and (B) are still another views showing the kinetics of forming an oxynitride film on a silicon substrate surface by UV-NO nitridation according to the ninth embodiment of the present invention; FIGS. .
FIG. 67 is a diagram illustrating an example of an ultraviolet light source.
FIG. 68 is a view showing a film thickness distribution of an oxynitride film obtained by a substrate processing step according to a tenth embodiment of the present invention.
FIGS. 69 (A) and (B) are diagrams showing an NO gas introduction sequence according to an eleventh embodiment of the present invention.
FIGS. 70A and 70B are diagrams showing the film thickness and the nitrogen concentration in the oxynitride film formed using the NO gas introduction sequence of FIGS. 69A and 69B.
FIGS. 71 (A) to (C) are diagrams (part 1) for explaining the steps of manufacturing a semiconductor device according to the twelfth embodiment of the present invention; FIGS.
FIGS. 72 (D) and (E) are views (No. 2) for explaining the steps of manufacturing a semiconductor device according to the twelfth embodiment of the present invention; FIGS.
FIG. 73 is a preferable RF-N according to the first embodiment of the present invention.₂It is a figure showing a processing condition.
FIG. 74 is a view showing the relationship between process conditions and film thickness distribution in a sixth embodiment of the present invention.
FIGS. 75A and 75B are diagrams respectively showing an XPS spectrum of a silicon oxide film and a relationship between a chemical shift appearing in the XPS spectrum and a film thickness.
FIG. 76 is a view showing the result of measuring the thickness distribution of an oxynitride film formed by a UV-NO process on a wafer having a diameter of 200 mm by improved ellipsometry.
[Explanation of symbols]
100,200 semiconductor device
1 silicon substrate
2 Base oxide film
2A, 332, 342 base oxide film, nitride film
3,333,343 High dielectric film
331a, 331b diffusion region
10, 20, 40 ° substrate processing equipment
11, 21, 321 processing container
11A, 22, 321A substrate holder
11B, 321B @ shower head
11a, 321a heater
11C, 321D optical window
12,322 substrate to be processed
13,324B UV light source
21A, 21E Exhaust port
21B Process space
21C Substrate loading / unloading room
21G quartz liner
21c, 22b, 22c @ purge line
21D gas nozzle
22A heater
22B magnetic seal tank
22C substrate rotation mechanism
23A, 23C, 23D, 24A, 24C, 29A, 29C, 29D Valve
23B, 29B Turbo molecular pump
24 dry pump
25 UV light source
25A optical window
26 remote plasma source
26A block
26B ferrite core
26C plasma
26a Gas circulation passage
26b gas inlet
26c @ gas outlet
26d coating
26e @ ion filter
27 substrate transfer unit
27A Gate valve
28 ° magnetic seal
30 cluster type substrate processing equipment
31A, 31B cassette module
32 substrate transfer chamber
33 washing room
34 oxidation / nitridation chamber
35 CVD room
36 heat treatment room
41 silicon substrate
42 oxide film
43 ZrSiO_xfilm
321B 'oxygen gas supply line
321C exhaust port
323 joint
323A, 324b, 324c @ inert gas supply line
324 UV exposure equipment
324A optical window
324C robot
324D space
324E exhaust port
324F shielding plate
325 control device
331,341 silicon substrate
350 cluster type substrate processing equipment
351 road lock
352 pretreatment room
353 UVO₂Radical oxidation chamber
354 CVD room
355 cooling room
356 substrate transfer chamber
426C @ plasma
426D @ plasma chamber
426b Gas inlet
426c trap
426d quartz liner

Claims (73)

Forming nitrogen radicals by high-frequency plasma;
Supplying the nitrogen radicals to the surface of the insulating film containing oxygen and nitriding the surface of the insulating film. 2. The method according to claim 1, wherein the insulating film is an oxide film. 3. The method according to claim 2, wherein the oxide film has a thickness of 0.4 nm or less. 2. The method according to claim 1, wherein the insulating film is an oxynitride film. 5. The insulating film according to claim 1, wherein the nitrogen radicals are supplied along with a flow of a gas formed to flow along a surface of the insulating film. 6. Nitriding method. 6. The insulating film according to claim 5, wherein the flow of the gas flows from a first side of the substrate on which the insulating film is formed to a second side that is radially opposed. Method. 7. The method according to claim 6, wherein the flow of the gas is exhausted on the second side of the substrate to be processed. The step of forming nitrogen radicals includes a step of exciting nitrogen gas by high-frequency plasma, and a step of removing nitrogen ions generated by the excitation of the nitrogen gas by a diffusion plate or an ion filter. Item 8. The method for nitriding an insulating film according to any one of Items 1 to 7. 9. The method according to claim 1, wherein the high-frequency plasma is formed by exciting a nitrogen gas at a frequency of about 400 kHz. 10. The method according to claim 1, wherein the step of nitriding the surface of the insulating film is performed at a pressure in a range of 0.67 Pa to 1.33 kPa. Prior to the step of supplying nitrogen radicals to the surface of the insulating film, the method further includes a step of purging a process space in which the insulating film is held to a pressure lower than that used in a nitriding step of the surface of the insulating film. The method for nitriding an insulating film according to claim 1. The purge step, the process ^{space, 1.33 × 10 -1 ~1.33 × 10} -4 Pa claim 11 nitriding method of the insulating film, wherein the evacuated to a pressure of. 13. The method according to claim 1, wherein the insulating film has a thickness of about 0.4 nm. The method according to claim 1, wherein the insulating film is an oxide film formed by treating a surface of a silicon substrate with ultraviolet light-excited oxygen radicals. Forming an insulating film on the silicon substrate surface;
Forming nitrogen radicals by high-frequency plasma;
Supplying the nitrogen radicals to the insulating film surface, and nitriding the insulating film surface;
Forming a high dielectric film on the insulating film whose surface has been nitrided. The method according to claim 15, wherein the insulating film is an oxide film. 17. The method according to claim 16, wherein the oxide film has a thickness of 0.4 nm or less. The method according to claim 15, wherein the insulating film is an oxynitride film. 19. The semiconductor device according to claim 15, wherein the nitrogen radicals are supplied along with a flow of a gas formed to flow along a surface of the insulating film. Production method. 20. The manufacturing of a semiconductor device according to claim 19, wherein the flow of the gas flows from a first side of the silicon substrate on which the insulating film is formed to a second side radially opposed to the first side. Method. 21. The method according to claim 20, wherein the flow of the gas is exhausted on the second side of the silicon substrate. 22. The method according to claim 15, wherein the step of forming nitrogen radicals includes a step of exciting nitrogen gas by high-frequency plasma and a step of removing nitrogen ions generated by the excitation of the nitrogen gas by an ion filter. 13. The method of manufacturing a semiconductor device according to claim 1. 23. The method according to claim 15, wherein the high-frequency plasma is formed by exciting nitrogen gas at a frequency of about 400 kHz. The method of manufacturing a semiconductor device according to any one of claims 15 to 23, wherein the step of nitriding the surface of the insulating film is performed at a pressure in a range of 0.67 Pa to 1.33 kPa. Prior to the step of supplying nitrogen radicals to the surface of the insulating film, the method further includes a step of purging a process space in which the insulating film is held to a pressure lower than that used in a nitriding step of the surface of the insulating film. The method of manufacturing a semiconductor device according to claim 15, wherein The method of manufacturing a semiconductor device according to claim 25, wherein in the purging step, the process space is evacuated to a pressure of 1.33 × 10 ⁻¹ to 1.33 × 10 ⁻⁴ Pa. The method according to any one of claims 15 to 26, wherein the insulating film has a thickness of about 0.4 nm. 28. The method of manufacturing a semiconductor device according to claim 15, wherein the step of forming the insulating film includes a step of treating the surface of the silicon substrate with ultraviolet light excited oxygen radicals. 16. The method according to claim 15, wherein the step of forming the insulating film and the step of nitriding the insulating film are performed continuously in the same processing apparatus without exposing the silicon substrate to the air in the middle. 29. The method of manufacturing a semiconductor device according to claim 28. The step of forming the insulating film and the step of nitriding the insulating film are continuously performed without exposing the silicon substrate to the air in the same processing apparatus, and performing the step of forming the insulating film. The step of purging a process space in which the insulating film is held is performed 0 to 4 times between the step of nitriding the insulating film and the step of nitriding the insulating film. The manufacturing method of the semiconductor device described in the above. A nitrogen radical forming unit that forms nitrogen radicals by high-frequency plasma;
A processing container for holding the substrate to be processed on which the insulating film is formed,
The substrate processing apparatus, wherein the processing container is supplied with the nitrogen radicals from the nitrogen radical forming unit, and supplies the nitrogen radicals to the surface of the insulating film to nitride the surface of the insulating film. The processing container has the nitrogen radical forming portion on a side surface, forms a gas flow so as to flow along the surface of the insulating film, and allows the nitrogen radical to flow along the surface of the insulating film. 32. The apparatus for processing an insulating film substrate according to claim 31, wherein the substrate is supplied to the surface of the insulating film while riding on a flow of the formed gas. 33. The gas flow, wherein the gas flows from the first side of the substrate on which the insulating film is formed to the second side radially opposite to the inside of the processing container. The substrate processing apparatus according to any one of the preceding claims. 34. The substrate processing apparatus according to claim 33, wherein the processing container is evacuated on the second side of the substrate to be processed. 35. The radical generator according to claim 31, wherein the radical forming unit includes a gas passage, and a high-frequency plasma forming unit formed in a part of the gas passage and plasma-exciting a nitrogen gas passing through the gas passage. The substrate processing apparatus according to any one of the preceding claims. 36. The substrate processing apparatus according to claim 35, wherein the high-frequency plasma forming unit performs plasma excitation of nitrogen gas at a frequency of about 400 kHz. 37. The processing container according to claim 31, wherein an exhaust system capable of reducing the pressure inside the processing container to a pressure lower than that used in a nitriding step of the insulating film surface is connected to the processing container. The substrate processing apparatus according to claim 1. A processing container that defines a processing space and includes a holding table that holds a substrate to be processed in the processing space,
A first radical source provided on the processing container on a first end side with respect to the holding table;
A second radical source provided on the processing container on the side of the first end with respect to the holding table;
A first exhaust path that is provided on the processing container on a side of a second end opposite to the first end with respect to the holding table, and exhausts the processing space to a first processing pressure;
A substrate processing apparatus comprising: a second exhaust path that exhausts the processing space to a second processing pressure on the processing container and on the side of the second end with respect to the holding table. The first exhaust path is driven when the first radical source is driven, and the second exhaust path is driven when the second radical source is driven. 39. The substrate processing apparatus according to claim 38, wherein: The first radical source includes an ultraviolet light source that excites oxygen gas supplied into the processing container, and the second radical source includes a remote plasma source that is supplied with nitrogen gas and excites the nitrogen gas. The substrate processing apparatus according to claim 38 or 39, wherein: The first radical source includes a nozzle for flowing oxygen gas along the surface of the substrate to be processed on the holding table, and the ultraviolet light source is provided at a position between the nozzle and the substrate to be processed, and 41. The substrate processing apparatus according to claim 40, wherein the oxygen gas released from the nozzle through a window is activated. 42. The substrate processing apparatus according to claim 38, wherein the first exhaust path includes a turbo molecular pump. 43. The substrate processing apparatus according to claim 38, wherein the second exhaust path includes a mechanical booster pump. 43. The substrate processing apparatus according to claim 42, wherein the turbo molecular pump is boosted by a mechanical booster pump. The substrate processing apparatus according to any one of claims 38 to 44, wherein the processing container has a substrate loading / unloading port at the second end. 46. The substrate according to claim 38, wherein the first and second exhaust paths exhaust the processing space through an exhaust port formed near the second end in the processing container. Processing equipment. 47. The substrate processing apparatus according to claim 46, wherein the first exhaust path includes a turbo-molecular pump coupled to the processing space via the exhaust port. The substrate processing apparatus according to any one of claims 38 to 47, wherein the holding table is rotatably provided, and a rotation mechanism that rotates the holding table is further provided. A processing container that defines a processing space and includes a holding table that holds a substrate to be processed in the processing space,
A first radical source provided on the processing vessel;
A second radical source provided on the processing vessel;
A first exhaust path provided on the processing container and exhausting the processing space to a first processing pressure;
A second exhaust path that is provided on the processing container and exhausts the processing space to a second processing pressure;
The first exhaust path is provided to exhaust the processing space on the opposite side of the first radical source with the substrate to be processed on the holding table interposed therebetween, and the second exhaust path Is provided to exhaust the processing space on the opposite side of the second radical source with the substrate to be processed on the holding table interposed therebetween. A substrate transfer chamber,
In a cluster-type substrate processing apparatus including a plurality of processing chambers coupled to the substrate transfer chamber, one of the plurality of processing chambers,
A processing vessel having a substrate loading / unloading port coupled to the substrate transfer chamber at a first end, a first radical source at a second opposed end, and defining a process space therein; When,
A substrate holder that is rotatably provided between the first end and the second end in the process space and that holds a substrate to be processed;
A first processing gas introduction unit that is provided between the first end and the substrate holder in the process space and that introduces a first processing gas into the process space;
A second processing gas introduction unit that introduces a second processing gas into the first radical source;
A second radical source provided on the processing container to activate the first processing gas between the first processing gas introduction unit and the substrate holder;
A first exhaust port provided at a portion closer to the first end than the substrate holding table in the process space;
A second exhaust port provided at a portion closer to the second end than the substrate holding table in the process space;
A first pump coupled to the first exhaust port and evacuating the process space to a first processing pressure;
A second pump coupled to the second exhaust port and evacuating the process space to a second, lower processing pressure;
The cluster type substrate processing apparatus, wherein the second pump is disposed near a second end of the processing container. A silicon substrate,
And an insulating film having a thickness of 2 to 4 atomic layers formed on the silicon substrate. The semiconductor device according to claim 51, wherein the insulating film has a uniform thickness in a range of 2 to 4 atomic layers. 53. The semiconductor device according to claim 51, wherein the insulating film is made of a silicon oxide film. 53. The semiconductor device according to claim 51, wherein the insulating film is made of a silicon oxynitride film. The semiconductor according to any one of claims 51 to 54, further comprising a high dielectric film formed on the insulating film, and a gate electrode formed on the high dielectric film. apparatus. A silicon substrate,
In a semiconductor device comprising an insulating film formed on the silicon substrate,
The semiconductor device according to claim 1, wherein the insulating film is formed by nitriding an oxide film having a thickness of 1 to 4 atomic layers formed on a silicon substrate. A substrate processing method, comprising: forming an oxide film on a surface of a silicon substrate by an oxidation process using an oxygen radical having a partial pressure in a range of 133 to 133 × 10 ⁻⁴ mPa. The method of claim 57, wherein a duration of the oxidation process is about 5 minutes or less. In the oxidation treatment step, in the presence of ultraviolet-excited oxygen radicals, the power of ultraviolet light having a wavelength of 172 nm is set in a range of 5 to 50 mW / cm ² in a region immediately below the ultraviolet light source, and the oxygen partial pressure is in a range of 133 mPa to 133 Pa. 59. The substrate processing method according to claim 57, wherein the method is performed by setting the following. Forming a base oxide film on the silicon substrate surface;
Forming a high dielectric film on the base oxide film;
Forming a gate electrode layer on the high dielectric film.
The step of forming the base oxide film includes a step of forming an oxide film on the surface of the silicon substrate by an oxidation treatment using oxygen radicals having a partial pressure in a range of 133 to 133 × 10 ⁻⁴ mPa. A method for manufacturing a semiconductor device, comprising: The method of claim 60, wherein a duration of the oxidation process is about 5 minutes or less. In the oxidation treatment step, in the presence of ultraviolet-excited oxygen radicals, the power of ultraviolet light having a wavelength of 172 nm is set in a range of 5 to 50 mW / cm ² in a region immediately below the ultraviolet light source, and the oxygen partial pressure is set to 133 mPa to 133 Pa. 62. The method for manufacturing a semiconductor device according to claim 60, wherein the method is performed by setting a range. Supplying a NO gas to the silicon substrate surface;
A step of exciting the NO gas with ultraviolet light to form an oxynitride film on the surface of the silicon substrate. The method of claim 63, wherein the ultraviolet light has a wavelength of about 172nm. 65. The substrate processing method according to claim 63, wherein the ultraviolet light is formed by a dielectric barrier discharge tube in which xenon is sealed. 64. The method of claim 63, wherein the oxynitride film is formed to a thickness of about 0.5 nm. The method of claim 63, wherein the step of forming the oxynitride film is performed at a substrate temperature of about 450 ° C. 68. The substrate processing method according to claim 63, wherein the step of forming the nitride film is performed for 200 seconds or less. 69. The substrate according to claim 63, wherein the step of forming the oxynitride film is performed at a processing pressure in a range of 1.33 to 1.33 × 10 ³ Pa. Processing method. 70. The substrate processing method according to claim 63, wherein the step of supplying the NO gas is started before starting to raise the temperature of the silicon substrate. 71. The substrate processing method according to claim 63, wherein a step of removing a natural oxide film on the surface of the silicon substrate is performed prior to the step of forming an oxynitride film. Supplying NO gas to the silicon substrate surface and exciting the NO gas with ultraviolet light to form an oxynitride film on the silicon substrate surface;
Forming a high dielectric film on the oxynitride film;
Forming a gate electrode on the high dielectric film. The method of manufacturing a semiconductor device according to claim 72, wherein the ultraviolet light has a wavelength of 172 nm.

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