TW200419811A - Method of fabricating a thin film transistor array panel - Google Patents
Method of fabricating a thin film transistor array panelInfo
- Publication number
- TW200419811A TW200419811A TW092107249A TW92107249A TW200419811A TW 200419811 A TW200419811 A TW 200419811A TW 092107249 A TW092107249 A TW 092107249A TW 92107249 A TW92107249 A TW 92107249A TW 200419811 A TW200419811 A TW 200419811A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- substrate
- gate
- fabricating
- thin film
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 238000002161 passivation Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW092107249A TW588462B (en) | 2003-03-31 | 2003-03-31 | Method of fabricating a thin film transistor array panel |
| US10/604,806 US6913957B2 (en) | 2003-03-31 | 2003-08-19 | Method of fabricating a thin film transistor array panelsubstrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW092107249A TW588462B (en) | 2003-03-31 | 2003-03-31 | Method of fabricating a thin film transistor array panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW588462B TW588462B (en) | 2004-05-21 |
| TW200419811A true TW200419811A (en) | 2004-10-01 |
Family
ID=32986238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092107249A TW588462B (en) | 2003-03-31 | 2003-03-31 | Method of fabricating a thin film transistor array panel |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6913957B2 (zh) |
| TW (1) | TW588462B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7939828B2 (en) | 2007-04-12 | 2011-05-10 | Au Optronics Corporation | Pixel structure and method for fabricating the same |
| CN102768991A (zh) * | 2012-07-31 | 2012-11-07 | 深圳市华星光电技术有限公司 | 一种液晶显示装置、阵列基板及其制作方法 |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101043991B1 (ko) * | 2004-07-28 | 2011-06-24 | 엘지디스플레이 주식회사 | 액정표시소자 및 그 제조방법 |
| CN100405547C (zh) * | 2004-08-06 | 2008-07-23 | 台湾薄膜电晶体液晶显示器产业协会 | 防止金属层扩散的tft电极结构与其制程 |
| KR101078360B1 (ko) * | 2004-11-12 | 2011-10-31 | 엘지디스플레이 주식회사 | 폴리형 액정 표시 패널 및 그 제조 방법 |
| US8149346B2 (en) | 2005-10-14 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| TWI275182B (en) * | 2005-11-07 | 2007-03-01 | Wintek Corp | TFT array panel and method of manufacturing the same thereof |
| JPWO2007055047A1 (ja) * | 2005-11-10 | 2009-04-30 | シャープ株式会社 | 表示装置およびそれを備える電子機器 |
| US7338846B2 (en) | 2006-01-12 | 2008-03-04 | Chunghwa Picture Tubes, Ltd. | Fabricating method of pixel structure |
| CN100380634C (zh) * | 2006-02-07 | 2008-04-09 | 友达光电股份有限公司 | 像素结构的制作方法 |
| US7411213B2 (en) * | 2006-04-03 | 2008-08-12 | Chunghwa Picture Tubes, Ltd. | Pixel structure, thin film transistor array substrate and liquid crystal display panel |
| JP2008010440A (ja) * | 2006-06-27 | 2008-01-17 | Mitsubishi Electric Corp | アクティブマトリクス型ｔｆｔアレイ基板およびその製造方法 |
| TWI298513B (en) | 2006-07-03 | 2008-07-01 | Au Optronics Corp | Method for forming an array substrate |
| US20100224880A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN105914183B (zh) * | 2016-06-22 | 2019-04-30 | 深圳市华星光电技术有限公司 | Tft基板的制造方法 |
| CN111128711B (zh) * | 2019-12-12 | 2023-02-07 | 深圳市华星光电半导体显示技术有限公司 | 一种背板的制作方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2530990B2 (ja) * | 1992-10-15 | 1996-09-04 | 富士通株式会社 | 薄膜トランジスタ・マトリクスの製造方法 |
| US6255130B1 (en) * | 1998-11-19 | 2001-07-03 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and a method for manufacturing the same |
-
2003
- 2003-03-31 TW TW092107249A patent/TW588462B/zh not_active IP Right Cessation
- 2003-08-19 US US10/604,806 patent/US6913957B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7939828B2 (en) | 2007-04-12 | 2011-05-10 | Au Optronics Corporation | Pixel structure and method for fabricating the same |
| CN102768991A (zh) * | 2012-07-31 | 2012-11-07 | 深圳市华星光电技术有限公司 | 一种液晶显示装置、阵列基板及其制作方法 |
| CN102768991B (zh) * | 2012-07-31 | 2015-07-15 | 深圳市华星光电技术有限公司 | 一种液晶显示装置、阵列基板及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW588462B (en) | 2004-05-21 |
| US20040191968A1 (en) | 2004-09-30 |
| US6913957B2 (en) | 2005-07-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |