TW200416925A - Method for detecting and repairing defects - Google Patents

Abstract

A method for detecting and repairing defects before a stripping process. The method includes a step of performing a defect detecting and repairing between a photolithography and a stripping process. The defect generated in each step can be detected and then removed so as to reduce manufacturing costs and increase production efficiency.

Description

200416925

The technical field to which the invention belongs The present invention provides a method for defect detection and repair, which refers to a method that is carried out after the process of showing the scene and the μ-resistance step and repair. With the booming development of the electronic information industry, the application range and market demand of thin-film transistor crystal display (UFT-LCD) have also continued to increase; due to the thin, thin and short structure of the TFT-LCD, it also consumes power. ^ Once the advantages of non-radiation pollution, from small products, such as electronic blood pressure, to portable information products, such as personal digital assistant (ρρΑ), notebook brain (notebook), it is very likely to be commercialized in the future In the daytime display, LCD displays are widely used. TFT-LCDs mainly use thin-film transistors arranged in a matrix, with appropriate capacitors, connection pads and other electronic components. To drive liquid crystal pixels to produce rich and beautiful graphics. Please refer to Figures 1 to 3. Figures 1 to 3 are schematic cross-sectional views of the process of the conventional TFT-LCD transistor 10. Please refer to Figure 1 'Transistor 10 Series Fabricated on the surface of a glass substrate 12, an aluminum metal layer 14 as a gate electrode (gate electrode) and an insulating layer (gate insula) are first formed on the glass substrate 12 in order. tion layer) 1 6-an amorphous silicon layer 18 and a doped silicon layer

Page 6 200416925 V. Description of the invention (2) Doped amorphous silicon layer 20. Among them, the doped amorphous silicon layer 20 and the amorphous silicon layer 18 outside the transistor region are further removed by a photo-etching-process (PEP) process in order to solve the problem. The insulating layer 16 outside the transistor region. Next, a metal layer 22 is completely deposited on the surface of the glass substrate 12, and a yellow light and etching process (PEP) is used to pattern the metal layer 22, as shown in FIG. 2, to form the TFT-LCD data lines and transistors. The drain / source of 10 'is then doped with the metal layer 22 as a hard mask, and the doped amorphous silicon layer 20 is etched downward so that the remaining doped amorphous silicon layer 20 and the metal layer are etched. 22 is used as a source conductive layer 24 and a non-electrode conductive layer 26 respectively. Then referring to FIG. 3, a passivation layer 28 is firstly deposited on the glass substrate 2 and an opening is formed on the surface of the drain conductive layer 26 by using another yellow light and etching process (PEP). Subsequently, an indium tin oxide (ITO) layer 30 is fully deposited on the surface of the glass substrate 12 and filled into the opening. Finally, a yellow light engraving process is performed to form a pattern of the IT0 layer. , Used as each pixel electrode of TFT-LCD. During the production process, the staggered area where the data line and the scan line pass simultaneously and the vicinity of the thin film transistor area are often because the shape of the scan lines or gate electrodes in the lower layer is not good enough, and the scan lines or gate lines ( gate line) undercut phenomenon, metal eruption phenomenon and the existence of semiconductor layer and gate insulation layer

200416925 V. Description of the invention (3) Defects such as residual inspection, cracks, particles, spots, and photoresistance defects, such as unintended contamination particles (partic 1 e), cause short-circuits between the scanning line and the data line (gate-signal short) )phenomenon. Therefore, in order to avoid various phenomena that may cause short circuits, it is known that T f τ-LCD transistors will add at least one inspection procedure to the standard process to detect possible defects, and after a defect is found, a repair procedure is performed. To remove the detection defect. Please refer to Figure 4. Figure 4 is a schematic diagram of a conventional process for simultaneously inspecting and repairing defects in a TFT-LCD transistor manufacturing process. Please refer to Figure 4. The defect inspection and repair process 1 00 includes the following steps: Step 102. Making a gate pattern. As described above, an aluminum metal layer is firstly deposited on the surface of the glass substrate, and then the aluminum metal layer is subjected to a first yellow light and etching process (pEp) to form a plurality of scan lines on the surface of the glass substrate. And the pattern of each gate electrode. Subsequently, the photoresist layer used in the first yellow light and etching process is removed. Step ίο 払 After etchi automatic optical inspection. In this step, the old and II automatic optical detectors are used to detect manufacturing defects, such as residues, cracks, particles, spots, and photoresistive defects that are not removed by the Polan sheet. = Make up: Defects, go to step 106; #No defects need to be repaired I Cylinder, ί ί 二 ^ 步 1 〇8. If it is judged that the defect occurred is too serious to be repaired, the aluminum metal layer is completely removed and repeated severely.

200416925 V. Description of the invention (4) Step 1020 Step 106: Defect repair (repa i r). Using a laser beam, heating removes the defects found in step 104. After the defect repair is completed, perform step 108 °, step 108: the insulator layer is exposed. An insulating layer, an amorphous silicon layer, and a doped amorphous silicon layer are sequentially and comprehensively deposited on the glass substrate. As shown in Fig.1, a second yellow light and etching process (pEp) is then performed to remove the crystals: i ϊ ΐ ί Ϊamorphous layer and amorphous layer to make the transistor area. Then, the second yellow light and etching step is removed; ◦ with; = step; / f The procedure and judgment method are the same as those of Bu Shaoxiang 106, so they will not be described again. Step 1 1 4: source and drain patterning. All, a metal layer is deposited. Subsequently, a pattern of two metal layers is performed on the surface of the broken glass substrate. Then two stars [name engraving process, = no ;: Xi layer 'residual doped amorphous: using plutonium as a two-source conductive layer and an electrodeless conductive layer H f layer are used for the second page of photo and etching system After 佶 9, after removing step 11 6 and step 丨 丨 8, I light ^ and layer, continue to step and step m and step "= 16 and step m

200416925 V. Description of the invention (5) Step 1 2 0: Protective layer deposition. A protective layer is entirely deposited on the surface of the glass substrate. Then a fourth yellow light and etching process is performed to define the pattern of the protective layer, and an opening is formed on the surface of the drain conductive layer. Next, the photoresist layer used in the fourth yellow light and etching process is removed, and steps 1 2 2 and 1 2 4 are continued, and the procedures performed in steps 1 2 2 and 1 2 4 are the same as those in step 1 Steps 0 and 4 are the same. Step 1 2 6: Indium tin oxide layer is deposited. Subsequently, an indium tin oxide layer is further fully deposited on the surface of the glass substrate 12 and the indium tin oxide layer is filled into the opening. A fifth yellow light and etching process is performed to form a pattern of the indium tin oxide layer. Subsequently, the photoresist layer used in the fifth yellow light and post-etching process is removed, and steps 1 2 8 and 1 3 0 ′ are performed, and steps 1 2 8 and 1 30 are performed in accordance with the procedure and step 1 〇4 and Step 106 are the same. The conventional process 100 is to perform an automatic optical inspection process and defect repair after etching after each yellow light and etching process, that is, after the photoresist removal operation is completed. However, after the photoresist layer removal operation is completed, “the automatic optical inspection procedure and defect repair are not performed, and the defects that are already present at the deposition step or the yellow light step cannot be eliminated in time”, which may result in each operation cycle. Unnecessarily complete the complete yellow light and last name engraving process (PEP), thus causing unnecessary consumption of photosensitive materials and photoresist removal solution, and an increase in process time. Summary of the Invention

200416925 V. Description of the invention (6) In the conventional technology, the method of defect detection and repair is applied to each of the yellow light and the remaining steps, so that the existing defects during the deposition step will not be able to be used. Eliminate and repair in time, so that unnecessary yellow light and etching process (PEP) may be performed once in each operation cycle, causing unnecessary time and cost in thin film transistor production. Therefore, one of the objectives of the present invention is to provide a method for defect detection and repair before the photoresist layer removal process after development, so as to solve the disadvantages of the conventional techniques that cannot remove defects occurring in the process in a timely manner, and the time and cost of the process. Cost. In the present invention, defect detection and repair operations are performed before the photoresist removal process, so that defects occurring at the beginning of each operation cycle can be immediately detected and eliminated, thereby saving time required for thin film transistor production. And reduce costs. Process steps can be simplified, and process efficiency and yield can be significantly improved. Embodiments Please refer to FIG. 5. FIG. 5 is a flowchart of a defect detection and repair work flow 2000 according to the first embodiment of the present invention. This embodiment is mainly performed before etching inspection and repairing before each etching step. In other words, this embodiment is inspected after development (a f t e r d e v e 1 ο p

Page 11 200416925 V. Description of the invention (7) After inspecti ο η (ADI) manufacturing process, a repair operation is used to screen and correct the correctness of the patterned photoresist layer, so that Defects occurring at the beginning of each working cycle can be detected and eliminated immediately, thereby saving time and costs for thin film transistor fabrication. As shown in FIG. 5, the defect inspection and repair process 2000 of this embodiment includes the following steps: Step body fluid and a liquid crystal tracer of the gold-conductive film layer. The intended step is to light the case and touch the hole 202. The crystal display cover is a layer of electrical layer, and the display and information contact is that any of the thin film layer and photoresist layer are deposited. First, on a transparent substrate for making a thin film transistor, at least one thin film layer is deposited on the surface of the film as a photoresist layer. Wherein, the thin film layer may be any layer, a passivation layer, or a transparent layer. How thin is required to prepare a thin film transistor liquid crystal display panel =: The resistive layer is based on the thin film layer and the thin film transistor μ f Functionality to define the pattern of the thin film layer, such as word search, search for the gate of the transistor, the active layer, the source / pixel electrode, and so on. It is worth noting that 2 and 2 can also be the beginning of LCD manufacturing process and even various semiconductor manufacturing processes. 204: Formation-Way & Patterned Photoresist Layer. After the exposure and development process, Tu Hongjiao, Zhuo Shang, transferred the photoresist layer to define the thin-film layer, such as the gate, active layer, and source / impulse of the solar-powered solar system. Or pick up the temple location.

Page 12 200416925 t. Description of the invention (8) Step 2 0 6: Perform an automatic study a inspectxon ^ Α0Ι) ^ ^ (automatic optical board surface, Xie Huaguang "is used to detect defects of the substrate, including the second one in the production process = Does the film f have any possible residues, or the deposition of U.S. plates / impurities, the depression of the etching process, and the lack of the patterned photoresist layer. In the absence of the film layer, f is based on A practical requirement is to formulate a ^ ^ = actual implementation using automated machinery and equipment for adjacent scanning rules ^ L and then trace comparison, when the defect of the patterned photoresist layer exceeds the surface of the bean film layer of the various predetermined specifications described above

When the above combination is used, it is necessary to manually carry out the defects ^ f and the two substrates specified in order to carry out a repair procedure, = division & non-compliance layer defects. T, the above specifications may include J = except: the permissible size of the patterned light, the permissible quantity, the position of the valley of the fish-completed layer, and so on. Step 208: Patch. Use a laser light to excite an infrared, 532 ^ instrument with a wavelength of 1 064 nanometers (rim). For example, use the ordering light of rice (11111), heat to dissolve or burn off in step 1 " ^ (11111) or 256 nanometer plate Defects on the surface, defects in the film layer, and defects in the base detected in 6. After this step is completed, there may be a certain amount of patterned photoresist layer. This residue can be removed in step 2 1 2.里 的 残 > 查 产生 ’

Step 2 10: Etching process. After screening and correcting the figure ^ correctness, then the photoresist layer of the field and chemical layer is used to correlate the corrosion in the industry.

200416925

Etching technology mainly includes two types of etching technologies, such as Dry Etching and Wet Etching, to transfer the patterned photoresist layer to the thin film layer. Step 212: Remove the patterned photoresist layer. The patterned photoresist layer is removed using the conductor photoresist process commonly used in the industry. The residue (r e s i d u e) generated in the patch 208 is removed from the patterned photoresist ^ j. After completing step 21-2, after the last name, after-etch-inspection (AEI), Hitoda Yuxuan, technology and post-etching inspection (AE I) are known and mature technologies. ,

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FIG. 6 is a flowchart of the defect detection and repair process 400 of the second embodiment of the present invention, and the process symbol used by the process symbol 400 is the same as the process 2000. As shown in Figure 6, the automatic optical inspection of the parties in 2006 and the repair procedure in step 208 are also available. The etching process of step 2 10 and the step of removing the photoresist layer in step 2 12 are performed at Screen and correct the defects on the surface of the substrate, the defects of the thin film layer, and the defects of the patterned photoresist layer. In this way, for a yellow light and a four-step process, defects generated after the etching process can also be passed through this process. Processing in accordance with the law in the industry can more comprehensively repair and repair the processes that may occur, and the residue generated by the repair process can also be removed by the process of detecting the photoresist layer. , 'Go

Page 14 200416925 V. Description of the invention (10) When the defect detection and repair operation is actually performed in the present invention, the automatic optical inspection program can be continued. The self-light ^ 1 can be performed in a sampling manner. For example, an optical inspection program is performed on a certain number of bases U-base 5. If the sampling substrate cannot pass the specifications of i ϊ i, the entire group of samples f are individually inspected and repaired. In order to improve the production yield of products. In etching, defects can be (PEP) charges. In the reverse process, the follow-up and repair repai] cycle is used to save the thin process step. In the known technology, the defects generated in the process are performed only after each yellow light cycle step. As a result, the existing ones during the deposition step cannot be timely. Eliminate and repair, resulting in more than one complete yellow light and etching process for each operation cycle 'causing unnecessary time and cost in thin film transistor production'. In the technology of the present invention, the choice The repair in the photoresist removal process will help to remove the residues from the repair process through the photoresist removal process. In the first embodiment, before the photo- and M-etching steps, a so-called before etching inspection and 1 ng is performed to carry out defect detection and repair operations, so that defects occurring in each operation period can be performed immediately. It is detected and eliminated, so that the time and cost required for the production of the film transistor is reduced, thereby achieving a simplified step, thereby significantly improving the process efficiency and yield. The descriptions of the ancient masters are only the preferred embodiments of the present invention. Any equal changes and modifications made in accordance with the present invention and the rails should belong to the patent of the present invention.

Page 15 200416925 V. Coverage of the invention statement (π). ΗΪΙ Page 16 200416925 Brief description of the diagrams Brief description of the diagrams: Figs. 1 to 3 are schematic cross-sectional views of the manufacturing process of the transistor 10 of the conventional TFT-LCD. Fig. 4 is a flowchart of performing defect inspection and repair at the same time in the thin film transistor manufacturing process in the conventional technology. FIG. 5 is a flowchart of a defect detection and repair operation process 2000 according to the first embodiment of the present invention. FIG. 6 is a flowchart of a defect detection and repair operation process 400 according to the second embodiment of the present invention. Explanation of symbols: 12 glass substrate 14 aluminum metal layer 16 insulation layer 18 amorphous silicon layer 20 doped amorphous silicon layer 22 metal layer 24 source conductive layer 26 drain conductive layer 28 protective layer 30 indium tin oxide layer

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Claims (1)

200416925 6. Application Patent Scope 1. A method for defect detection and repair, comprising: providing a substrate, and the substrate including at least one thin film layer covering the substrate; forming a patterned photoresist layer on the thin film Layer; performing an automatic optical inspection program to detect whether the substrate has a defect; and when the substrate has a defect, performing a repair procedure to remove the substrate defect; Performing an etching process on the thin film layer to transfer the pattern of the patterned photoresist layer into the thin film layer; and removing the patterned photoresist layer. 2. The inspection and repair method according to item 1 of the patent application, wherein the defects on the substrate include one of the defects on the substrate surface, the defects of the thin film layer, and the defects of the patterned photoresist layer, or both Combination of the above. 3. For the method of inspection and repair in item 2 of the patent application scope, wherein the residue generated by the repair procedure is removed at the same time as the patterned photoresist layer. 4. The inspection and repair method according to item 1 of the patent application scope, wherein the automatic optical inspection program is further used to inspect the substrate surface, the patterned photoresist layer and the thin film layer for defects. Page 18 200416925 VI. Application for patent scope 5. For the inspection and repair method of the patent application scope item 4, the repair procedure is used to remove defects of the substrate surface, the patterned photoresist layer and the thin film layer. One or a combination of the above two. 6. The inspection and repair method according to item 5 of the patent application scope, wherein the repair procedure uses laser to remove one of the patterned photoresist layer, the thin film layer and the defects on the substrate surface or more than two of the above. combination. 7. A method for defect detection and repair, comprising: providing a substrate, and the substrate including at least one thin film layer covering the substrate to form a patterned photoresist layer on the thin film layer; An etching process is performed on the layer to transfer the pattern of the patterned photoresist layer into the thin film layer; an automatic optical inspection program is performed to detect whether there is a defect on the substrate; when there is a defect on the substrate, a repair is performed A procedure to remove defects on the substrate; and removing the patterned photoresist layer. 200416925 VI. Application for Patent Scope 9. For the inspection and repair method of the seventh scope of patent application, the defects on the substrate include the defects of the substrate, the defects of the thin film layer, and the defects of the patterned photoresist layer. One or a combination of the above two. 10. The inspection and repair method according to item 7 of the patent application scope, wherein the repair procedure uses laser to remove defects on the substrate. 11. A method for detecting and repairing defects after development, comprising: providing a substrate, and the substrate including at least a thin film layer and a photoresist layer overlying the thin film layer; performing a step on the photoresist layer; An exposure and development process to form a patterned photoresist layer on the thin film layer; perform an optical inspection procedure to detect whether the defects of the patterned photoresist layer meet a predetermined specification; and when the patterned photoresist layer is When the defect exceeds the predetermined specification, a repair process is performed to remove the defect of the patterned photoresist layer. 1 2. The inspection and repair method according to item 11 of the scope of patent application, wherein the predetermined specification includes one of the allowable size, allowable number, and allowable position of the defects of the photoresist layer or the above A combination of more than two. 200416925 VI. Application for Patent Scope 1 3. The inspection and repair method as described in Article 11 of the Patent Application Scope. After the repair process is completed, the method further includes the following steps: An etching process is performed on the thin film layer to apply Transferring the pattern of the patterned photoresist layer into the thin film layer; and removing the patterned photoresist layer. 14. The detection and repair method according to item 11 of the scope of patent application, wherein the residue (r e s i d u e) generated by the repair process is removed at the same time as the patterned photoresist layer. 15. The inspection and repair method according to item 11 of the scope of patent application, wherein the repair procedure uses laser to remove the defects of the patterned photoresist layer. Page 21