CN107271450A - A kind of detection method of polyamide/silicon nitride film compactness - Google Patents
A kind of detection method of polyamide/silicon nitride film compactness Download PDFInfo
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- CN107271450A CN107271450A CN201710468368.4A CN201710468368A CN107271450A CN 107271450 A CN107271450 A CN 107271450A CN 201710468368 A CN201710468368 A CN 201710468368A CN 107271450 A CN107271450 A CN 107271450A
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- Prior art keywords
- glass substrate
- alkaline solution
- abnormity point
- polyamide
- silicon nitride
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- 238000001514 detection method Methods 0.000 title claims abstract description 29
- 239000004952 Polyamide Substances 0.000 title claims abstract description 23
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 23
- 229920002647 polyamide Polymers 0.000 title claims abstract description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 239000011521 glass Substances 0.000 claims abstract description 64
- 239000012670 alkaline solution Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 40
- 238000007654 immersion Methods 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 17
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 8
- LCGLNKUTAGEVQW-UHFFFAOYSA-N methyl monoether Natural products COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 claims description 8
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000003513 alkali Substances 0.000 claims description 7
- 239000012153 distilled water Substances 0.000 claims description 7
- 239000003112 inhibitor Substances 0.000 claims description 7
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000002798 polar solvent Substances 0.000 claims description 5
- 208000037656 Respiratory Sounds Diseases 0.000 claims description 4
- 238000007689 inspection Methods 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims 1
- 239000002585 base Substances 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 229910004205 SiNX Inorganic materials 0.000 abstract description 59
- 238000001035 drying Methods 0.000 abstract description 11
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 67
- 238000012545 processing Methods 0.000 description 15
- 230000000903 blocking effect Effects 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 3
- -1 1- amylalcohols Chemical compound 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 2
- CGKQZIULZRXRRJ-UHFFFAOYSA-N Butylone Chemical compound CCC(NC)C(=O)C1=CC=C2OCOC2=C1 CGKQZIULZRXRRJ-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical group CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 2
- 150000002169 ethanolamines Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- CEQFOVLGLXCDCX-WUKNDPDISA-N methyl red Chemical compound C1=CC(N(C)C)=CC=C1\N=N\C1=CC=CC=C1C(O)=O CEQFOVLGLXCDCX-WUKNDPDISA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/30—Staining; Impregnating ; Fixation; Dehydration; Multistep processes for preparing samples of tissue, cell or nucleic acid material and the like for analysis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/34—Purifying; Cleaning
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
Abstract
The invention provides a kind of detection method of polyamide/silicon nitride film compactness, the glass substrate of polyamide/silicon nitride passive film has been prepared including the use of alkaline solution levelling or immersion；Then by cleaning glass substrate and drying, afterwards detect glass substrate on abnormity point and to abnormity point reparation.The detection method that the present invention is provided has filled up the blank of PA SiNx films compactness detection.Detect that the alkaline solution used can use existing photoresistance stripper to PA SiNx films compactness, raw material process is ripe, with practical value.
Description
Technical field
The invention belongs to liquid crystal display detection field, and in particular to a kind of detection of polyamide/silicon nitride film compactness
Method.
Background technology
In the preparation process of liquid crystal display, the ITO (tin indium oxide) after polyamide/silicon nitride (PA-SiNx) processing procedure
Processing procedure etching uses highly corrosive solution.PA-SiNx films ensure that internal material from alkali ion and gold
The pollution of category, and there is certain protective capability, and the moisture-proof of PA-SiNx films to the mechanically and chemically damage of material
It is good, back of the body channel charge accumulation can be reduced.PA-SiNx films are to ensureing that the performance of liquid crystal display has important effect.At present,
Detection to PA-SiNx films can only measure PA-SiNx thickness according to glass substrate (Panel) periphery design.But do not examine
, there is blind spot to the detection of PA-SiNx films in the method for surveying PA-SiNx film compactness.If however, the densification of PA-SiNx films is not
Good, the metallic in the processing procedure after PA-SiNx, which enters, is corroded lower section film layer below PA-SiNx films, influenceed
TFT (thin film transistor (TFT)) performance.It is, thus, sought for a kind of method of detection PA-SiNx film compactness.
The content of the invention
It is an object of the invention to provide a kind of method of detection PA-SiNx film compactness, detection method of the invention makes
Soaked with alkaline solution or levelling is by the glass substrate of PA-SiNx processing procedures, then cleaned, dry detection abnormity point and pass through
Mode for dispensing glue is repaired.
The present invention is realized in the following way：
A kind of detection method of polyamide/silicon nitride film compactness, including：
Step I：The glass substrate of polyamide/silicon nitride film has been prepared using alkaline solution levelling or immersion；
Step II：By the cleaning glass substrate after levelling or immersion, to remove overburden and alkaline solution, then by glass
Drying substrates；
Step III：Detect glass substrate on abnormity point and to abnormity point reparation.
In the present invention, the alkaline solution can use the photoresistance remover used in liquid crystal panel heavy industry processing procedure, bag
Include alkali compounds and polar solvent.As long as existing photoresistance remover does not have damage to PA-SiNx films, this hair may be incorporated for
It is bright.Preferably, one or more of the alkali compounds in KOH, monoethanolamine and triethanolamine.The polar solvent choosing
One or more from dimethyl sulfoxide, alcohol and ether.The example of alcohol and ether can be conventional methanol, ethanol, isopropanol, positive third
Alcohol, n-butanol, 1- amylalcohols, n-hexyl alcohol, methyl ether, ether, ethyl methyl ether, positive propyl ether, n-butyl ether and one kind or many in tetrahydrofuran
Kind.
Glass substrate of the present invention using alkaline solution levelling or immersion after polyamide/silicon nitride processing procedure, in PA-
OH in SiNx films compactness not Jia Chu, alkaline solution-It can be immersed by the gap of PA-SiNx films, below PA-SiNx films
Organic layer reacts, expansion and stripping organic layer, forms color blocking cavity, causes PA-SiNx to cave in.
According to the preferred embodiment of the present invention, metal corrosion inhibitor is further additionally added in the alkaline solution, with
Prevent corrosion of the alkaline solution to PA-SiNx film lower-lying metals.
According to the present invention, in step I, in levelling and immersion process, preferably control the temperature of alkaline solution for 50 DEG C-
200 DEG C, soak time is 20s-400s.The temperature and soak time of alkaline solution are adjusted according to the thickness of film, inventor's research
It was found that, too low temperature is unfavorable for alkaline solution and reacted with the organic film below PA-SiNx films, and detection speed is slow, but mistake
High temperature can cause destruction of the alkaline solution to organic film below PA-SiNx films serious, unfavorable to performance.
In the present invention, after the glass substrate of alkaline solution levelling or immersion after polyamide/silicon nitride processing procedure,
The glass substrate cleaned with distilled water after levelling or immersion, alkaline solution and overburden is washed, and glass substrate is done
It is dry, it can be dried using air knife drying or by the way of using heating to be evaporated.
In the present invention, glass substrate detects the abnormity point on glass substrate and abnormity point is repaiied after over cleaning and drying
It is multiple.Abnormity point uses method for automated optical inspection on detection glass substrate, usually using the micro- scarnning mirror of automated optical of producing line
Glass substrate, if it find that the PA-SiNx films of glass baseplate surface have crackle, then by this abnormity point position reporting system, is carried out
Repairing, abnormity point is repaired in step III using mode for dispensing glue.Preferably, using by methyl methacrylate or photoresist
Click and enter in the color blocking cavity below polyamide/silicon nitride film, then carry out the polymerization of single-point light irradiation to repair abnormity point.
In certain embodiments of the present invention by the way that methyl methacrylate is instilled at abnormity point below PA-SiNx films
Color blocking cavity in single-point irradiation photopolymerization to repair abnormity point.In other embodiments by by red, green and/or
Blue light resist instills single-point in color blocking cavity corresponding below PA-SiNx films at abnormity point and irradiates photopolymerization to repair exception
Point.
When detecting PA-SiNx film abnormity points by automated optical detection equipment in step III, if it find that surface
PA-SiNx films have crackle, then thinner or film quality is poor for the film layer for illustrating herein so that alkaline solution enters color
Resistance layer, causes the exception of PA-SiNx films.
Beneficial effects of the present invention are:
(1) the invention provides a kind of detection method of PA-SiNx films compactness, the inspection of PA-SiNx films compactness has been filled up
The blank of survey.
(2) detection of PA-SiNx film compactness is detected and provided in liquid crystal panel preparation process in the present invention
Repairing measures, it is compared to finished product detection more timely and effective.
(3) present invention detects that the alkaline solution used can use existing photoresistance stripper to PA-SiNx films compactness,
Raw material process is ripe, with practical value.
Brief description of the drawings
Fig. 1 is the process levelling or immersion treatment observed under an optical microscope, and the PA-SiNx films after cleaning-drying；
Fig. 2 is the picture of the abnormity point in PA-SiNx films in the Fig. 1 observed under focused ion beam microscope；
Wherein, 1PA-SiNx cracks, 2PA-SiNx films, 3 photoresist layers.
Embodiment
The present invention is described in detail with reference to embodiments, but the present invention is not limited by following embodiments.
A kind of detection method of polyamide/silicon nitride film compactness, including：
Step I：Use the glass substrate of alkaline solution levelling or immersion after polyamide/silicon nitride processing procedure；
Step II：By the cleaning glass substrate after levelling or immersion, to remove overburden and alkaline solution, then by glass
Drying substrates；
Step III：Detect the abnormity point on glass substrate and reparation.
In the present invention, the alkaline solution can use the photoresistance remover used in liquid crystal panel heavy industry processing procedure, bag
Include alkali compounds and polar solvent.As long as existing photoresistance remover does not have damage to PA-SiNx films, this hair may be incorporated for
It is bright.Preferably, one or more of the alkali compounds in KOH, monoethanolamine and triethanolamine.The polar solvent choosing
One or more from dimethyl sulfoxide, alcohol and ether.The example of alcohol and ether can be conventional methanol, ethanol, isopropanol, positive third
Alcohol, n-butanol, 1- amylalcohols, n-hexyl alcohol, methyl ether, ether, ethyl methyl ether, positive propyl ether, n-butyl ether and one kind or many in tetrahydrofuran
Kind.
Glass substrate of the present invention using alkaline solution levelling or immersion after polyamide/silicon nitride processing procedure, in PA-
OH in SiNx films compactness not Jia Chu, alkaline solution-It can be immersed by the gap of PA-SiNx films, below PA-SiNx films
Organic layer reacts, expansion and stripping organic layer, forms color blocking cavity, causes PA-SiNx to cave in.
In some embodiments of the present invention, metal corrosion inhibitor is further additionally added in the alkaline solution, to prevent
Only corrosion of the alkaline solution to PA-SiNx film lower-lying metals.
In embodiments of the present invention, in step I, in levelling and immersion process, the temperature of alkaline solution is preferably controlled
Spend for 50 DEG C -200 DEG C, soak time is 20s-400s, under atmospheric humidity.
In embodiments of the present invention, the glass of alkaline solution levelling or immersion after polyamide/silicon nitride processing procedure is used
After glass substrate, the glass substrate cleaned with distilled water after levelling or immersion washes alkaline solution and overburden, and will
Glass substrate is dried, and can be dried using air knife drying or by the way of using heating to be evaporated.
In embodiments of the present invention, glass substrate is after over cleaning and drying, and the abnormity point on detection glass substrate is simultaneously
To abnormity point reparation.Abnormity point uses method for automated optical inspection on detection glass substrate, usually using the automated optical of producing line
Microscope scanning glass inspecting substrate abnormity point, if it find that the PA-SiNx films of glass baseplate surface have crackle, then by this exception
Point reporting position system, is repaired, abnormity point is repaired using mode for dispensing glue in step III.Preferably, using by methyl
Methyl acrylate or red, green and/or blue light resist are clicked and entered in the color blocking cavity below polyamide/silicon nitride film, then
The polymerization of single-point light irradiation is carried out to repair abnormity point.
In certain embodiments of the present invention by the way that methyl methacrylate is instilled at abnormity point below PA-SiNx films
Color blocking cavity in single-point irradiation photopolymerization to repair abnormity point.By by red photoresist, green in other embodiments
Coloured light resist and/or blue light resist instill single-point irradiation light in the corresponding color blocking cavity in PA-SiNx films lower section at abnormity point and gathered
Close to repair abnormity point.
Embodiment 1
A kind of detection method of polyamide/silicon nitride film compactness, comprises the following steps：
(1) by liquid bath of the glass substrate immersion equipped with alkaline solution by PA-SiNx processing procedures.The alkaline solution used
Including 40 parts of monoethanolamines in terms of parts by weight, 50 parts of dimethyl sulfoxides (DMSO), 9 parts of metal corrosion inhibitors and 1 part of water.Immersion
Time is 90s, and alkaline solution temperature is 140 DEG C.
(2) glass substrate soaked by alkaline solution is immersed into cleaning section, removed in this process using distilled water cleaning
The alkaline solution and overburden of glass baseplate surface are removed, glass substrate is heated to the mode being evaporated afterwards and is dried.
(3) the micro- scarnning mirror of automated optical with dried glass substrate by producing line will be cleaned, by glass substrate
There is the coordinate reporting system at crack position on PA-SiNx films surface.The abnormal coordinate reported afterwards according to system, using for dispensing glue
Mode, (does not differentiate between color blocking color) by clicking and entering methyl methacrylate in the color blocking cavity below PA-SiNx films, carries out single
Point ultraviolet light solidification, to repair the organic film material corroded by alkaline solution.
Embodiment 2
A kind of detection method of polyamide/silicon nitride film compactness, comprises the following steps：
(1) by liquid bath of the glass substrate immersion equipped with alkaline solution by PA-SiNx processing procedures.The alkaline solution used
Including 35 parts of monoethanolamines in terms of parts by weight, 54 parts of ethanol, 10 parts of metal corrosion inhibitors and 1 part of water.Soak time is
20s, alkaline solution temperature is 200 DEG C.
(2) glass substrate soaked by alkaline solution is immersed into cleaning section, removed in this process using distilled water cleaning
The alkaline solution and overburden of glass baseplate surface are removed, glass substrate is dried with the mode of air knife drying afterwards.
(3) the micro- scarnning mirror of automated optical with dried glass substrate by producing line will be cleaned, by glass substrate
There is the coordinate reporting system at crack position on PA-SiNx films surface.The abnormal coordinate reported afterwards according to system, using for dispensing glue
Mode, clicks and enters corresponding color blocking below PA-SiNx films empty respectively by red photoresist, green photoresist and/or blue light resist
In hole, single-point ultraviolet light solidification is carried out, to repair the organic film material corroded by alkaline solution.
Embodiment 3
A kind of detection method of polyamide/silicon nitride film compactness, comprises the following steps：
(1) by liquid bath of the glass substrate immersion equipped with alkaline solution by PA-SiNx processing procedures.The alkaline solution used
Including 40 parts of KOH in terms of parts by weight, 53 parts of glycerine, 5 parts of metal corrosion inhibitors and 2 parts of water.Soak time is 400s,
Alkaline solution temperature is 20 DEG C.
(2) glass substrate soaked by alkaline solution is immersed into cleaning section, removed in this process using distilled water cleaning
The alkaline solution and overburden of glass baseplate surface are removed, glass substrate is dried with the mode of air knife drying afterwards.
(3) the micro- scarnning mirror of automated optical with dried glass substrate by producing line will be cleaned, by glass substrate
There is the coordinate reporting system at crack position on PA-SiNx films surface.The abnormal coordinate reported afterwards according to system, using for dispensing glue
Mode, clicks and enters corresponding color blocking below PA-SiNx films empty respectively by red photoresist, green photoresist and/or blue light resist
In hole, single-point ultraviolet light solidification is carried out, to repair the organic film material corroded by alkaline solution.
Embodiment 4
A kind of detection method of polyamide/silicon nitride film compactness, comprises the following steps：
(1) by liquid bath of the glass substrate immersion equipped with alkaline solution by PA-SiNx processing procedures.The alkaline solution used
Including 24 parts of triethanolamines in terms of parts by weight, 67 parts of ether, 6 parts of metal corrosion inhibitors and 4 parts of water.Soak time is
150s, alkaline solution temperature is 160 DEG C.
(2) glass substrate soaked by alkaline solution is immersed into cleaning section, removed in this process using distilled water cleaning
The alkaline solution and overburden of glass baseplate surface are removed, glass substrate is dried with the mode of air knife drying afterwards.
(3) the micro- scarnning mirror of automated optical with dried glass substrate by producing line will be cleaned, by glass substrate
There is the coordinate reporting system at crack position on PA-SiNx films surface.The abnormal coordinate reported afterwards according to system, using for dispensing glue
Mode, clicks and enters corresponding color blocking below PA-SiNx films empty respectively by red photoresist, green photoresist and/or blue light resist
In hole, single-point ultraviolet light solidification is carried out, to repair the organic film material corroded by alkaline solution.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (10)
1. a kind of detection method of polyamide/silicon nitride film compactness, including：
Step I：The glass substrate of polyamide/silicon nitride film has been prepared using alkaline solution levelling or immersion；
Step II：By the cleaning glass substrate after levelling or immersion, to remove overburden and alkaline solution, then by glass substrate
Dry；
Step III：Detect glass substrate on abnormity point and to abnormity point reparation.
2. according to the method described in claim 1, it is characterised in that the alkaline solution is photoresistance remover.
3. method according to claim 1 or 2, it is characterised in that the alkaline solution includes alkali compounds and polarity
Solvent.
4. method according to claim 3, it is characterised in that the alkali compounds is selected from KOH, monoethanolamine and three ethanol
One or more in amine, and/or one or more of the polar solvent in dimethyl sulfoxide, alcohol and ether.
5. according to the method described in claim 1, it is characterised in that the alkaline solution also includes metal corrosion inhibitor.
6. according to the method described in claim 1, it is characterised in that in step I, the temperature of alkaline solution is 50 DEG C -200
DEG C, levelling or soak time are 20s-400s.
7. according to the method described in claim 1, it is characterised in that the glass base cleaned using distilled water after levelling or immersion
Plate.
8. according to the method described in claim 1, it is characterised in that in step III, abnormity point is used on detection glass substrate
Method for automated optical inspection：By automated optical microscope scanning glass substrate, if it find that there is crackle on the surface of glass substrate,
It is herein then abnormity point, by the coordinate reporting system of this abnormity point position.
9. according to the method described in claim 1, it is characterised in that abnormity point is repaired using mode for dispensing glue in step III.
10. according to the method described in claim 1, it is characterised in that used in step III by methyl methacrylate or light
Resist, which is clicked and entered, carries out photopolymerization reparation below polyamide at abnormity point/silicon nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710468368.4A CN107271450A (en) | 2017-06-20 | 2017-06-20 | A kind of detection method of polyamide/silicon nitride film compactness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710468368.4A CN107271450A (en) | 2017-06-20 | 2017-06-20 | A kind of detection method of polyamide/silicon nitride film compactness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107271450A true CN107271450A (en) | 2017-10-20 |
Family
ID=60068672
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710468368.4A Pending CN107271450A (en) | 2017-06-20 | 2017-06-20 | A kind of detection method of polyamide/silicon nitride film compactness |
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| Country | Link |
|---|---|
| CN (1) | CN107271450A (en) |
Cited By (2)
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| CN110867393A (en) * | 2019-11-21 | 2020-03-06 | 晶澳（扬州）太阳能科技有限公司 | Characterization method for compactness of deposited film and manufacturing method of battery piece |
| US11822115B2 (en) | 2019-11-29 | 2023-11-21 | Hisense Visual Technology Co., Ltd. | Display apparatus |
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