CN102893218A - Photoresist stripper composition - Google Patents
Photoresist stripper composition Download PDFInfo
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- CN102893218A CN102893218A CN2011800231693A CN201180023169A CN102893218A CN 102893218 A CN102893218 A CN 102893218A CN 2011800231693 A CN2011800231693 A CN 2011800231693A CN 201180023169 A CN201180023169 A CN 201180023169A CN 102893218 A CN102893218 A CN 102893218A
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- alcohol
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Abstract
A photoresist stripper composition comprising 0.5 to 5 % by weight of alkyl ammonium hydroxide; 60 to 90 % by weight of aprotic polar solvent; 0.1 to 3 % by weight of aromatic polyhydric alcohol; 0.1 to 5 % by weight of linear polyhydric alcohol; and 5 to 30 % by weight of water has an excellent capacity for stripping a positive and a negative photoresists, and dose not corrode a metal wiring under the photoresist.
Description
Technical field
The present invention relates to a kind of in the manufacture process of semiconductor devices, LED device or LCD device photoresistance remover (photoresist stripper) constituent in order to remove photoresist.
Background technology
Generally, microcircuit semiconductor devices, LED device or LCD device system are via a series of photoetching method productions.Photoetching method comprises step: form metal level or insulation course etc. at base material; Photoresist is spread on the metal level; Make the exposure of photoresist selectivity form required photoresist pattern by pattern mask; And development treatment.In the method, by with described photoresist pattern as mask, form the pattern of metal level or insulation course via dry-etching or Wet-type etching, then remove the photoresist pattern by stripping means.
Be dissolved in the variation of the ability of developer during according to exposure, photoresist is divided into two types, that is, and and eurymeric photoresist and negative light resistance agent.The eurymeric photoresist is that a kind of its exposed portion becomes the photoresist that dissolves in developer, and negative light resistance agent is that a kind of its exposed portion becomes the photoresist that is insoluble in developer.
In common wet method, can remove easily the eurymeric photoresist by using common remover.But, when the eurymeric photoresist hardens during dry-etching or implanted ions process or during sex change, then is difficult to remove the eurymeric photoresist.Because the ability of the easily property of pattern control and generation anisotropy design transfer, dry etching method is preferred for forming little pattern.But, dry etching method use plasma gas (plasma gas) with such as the gas-solid reaction between the material layer of conducting stratum, the result, the ion of plasma gas and free radical react with photoresist, thereby photoresist is hardened and sex change.Moreover, in the manufacture process of semiconductor devices, LED device or LCD device, Implantation be a kind of make foreign atoms (dopant atom) such as P, As, B enter the Silicon Wafer of desired zone, to produce conductive method; Therefore, the eurymeric photoresist can pass through therewith isoionic chemical reaction sex change.
Simultaneously, negative light resistance agent is used for throwing except (lift-off) method.The exposed portion of negative light resistance agent becomes soluble via crosslinked action, therefore, and can not be fully with its removal by using common solvent, and cleaning process needs implement under critical conditions, for example surpasses 100 ℃ high temperature and longer dip time.
What advised is, various aqueous release agent is used for removing the photoresist of sclerosis and sex change during dry-etching or the ion implantation process.For example, reported the remover constituent (publication number is the Jap.P. of No.1992-289866) that comprises hydroxyl amine, alkanol amine and water; The remover constituent (publication number is the Jap.P. of No.1994-266119) that comprises hydroxyl amine, alkanol amine, water and corrosion inhibitor; Comprise polar solvent (such as, gamma-butyrolacton, dimethyl formamide, dimethyl acetamide, 1-METHYLPYRROLIDONE etc.), the remover constituent (publication number is the Jap.P. of No.1995-69618) of amido alcohols (such as 2-methyl amido ethanol) and water; The remover constituent (publication number is the Jap.P. of No.1997-152721) that comprises alkanol amine (such as monoethanolamine/amido ethoxy ethanol), hydroxyl amine, monoalkyl ethers of diethylene glycol, carbohydrate (D-sorbite) and water; And comprise the remover constituent (publication number is the Jap.P. of No.1997-96911) that hydroxyl amine, water, pKa are 7.5～13 amine, water-miscible organic solvent and corrosion inhibitor.But even these constituents can be used for peeling off the eurymeric photoresist of crosslinked or sex change, but they do not have the ability that is enough to peel off negative light resistance agent.
Acid remover or alkali remover have been used for removing negative light resistance agent traditionally.Comprising alkyl benzene sulfonate, phenolic compound, chlorinated solvent and aromatic hydrocarbon based remover is a representational sour remover, but its ability of peeling off negative light resistance agent is not enough.Moreover an alkali remover that comprises water-soluble organic amine and organic solvent not only has the poor ability of peeling off negative light resistance agent, and causes metal erosion.
Be head it off, the patent No. is the remover constituent that has proposed to comprise hydrazine, polar organic solvent, alkali cpd and water in the Korean Patent of No.718527.But although this compound has the good ability of peeling off negative light resistance agent, it is not sufficient to suppress the corrosion of metal line under photoresist.
Recently, because the method for semiconductor devices, LED device or LCD device of making becomes meticulousr and complicated, these methods can be used eurymeric and negative light resistance agent.Therefore, if useless in the common remover of eurymeric and negative light resistance agent, then need independent remover and processing treatment facility, cause the increase of manufacturing cost and time.Therefore, the remover constituent that needs to remove efficiently eurymeric and negative light resistance agent and can not cause the metal line under the photoresist layer to corrode.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of remover constituent, it has the excellent ability of peeling off eurymeric photoresist and negative light resistance agent, and can not corrode the metal line below the photoresist layer.
According to one aspect of the present invention, a kind of photoresistance remover constituent is provided, and it comprises the alkyl ammonium hydroxide of 0.5-5% by weight, by weight non-proton property polar solvent, by weight aromatic series polyhydroxy-alcohol, by weight linear polyhydroxy-alcohol and the water of 5-30% by weight of 0.1-5% of 0.1-3% of 60-90%.
Have according to photoresistance remover constituent of the present invention and excellent to peel off eurymeric photoresist via dry-etching or ion implantation sclerosis and sex change, and be used for throwing the ability of the negative light resistance agent of eliminating method, and in stripping process and ultrapure water flushing process, it can not corrode the metal line below the photoresist layer.
Embodiment
The exemplary alkyl ammonium hydroxide that is used for constituent of the present invention comprises Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, TPAOH and composition thereof.Because the crosslinked action that exists in it, via the eurymeric photoresist of dry-etching, etching or ion implantation sclerosis and sex change, and during exposure process crosslinked negative light resistance agent can not be dissolved in a solvent.Therefore, need by using the alkaline constituents that is used for the cut-out crosslinked action that crosslinked photoresist is changed over soluble form.
Preferably, based on the general assembly (TW) of constituent, the content of alkyl ammonium hydroxide is 0.5-5% by weight.If the content of alkyl ammonium hydroxide is less than 0.5% by weight, the efficient of removing photoresist becomes lower, and this is because it is difficult to cut off sex change and crosslinked polymer chain; If it surpasses 5% by weight, the relative content of non-proton property polar solvent reduces, and reduces so the solubleness of photoresist and the corrosion of the metal film below the increase.
The non-proton property polar solvent of constituent of the present invention can be N, dinethylformamide, N, N-dimethyl acetamide, N, N '-diethyl acetamide, dimethyl sulfoxide (DMSO), N-METHYLFORMAMIDE, N, N '-dimethyl lactamide (N, N '-dimethyllactamamide), 1-METHYLPYRROLIDONE, gamma-butyrolacton, propylene carbonate, 1,3-dimethyl-2-imidazolidinone and composition thereof.
Preferably, based on the general assembly (TW) of constituent, the content of non-proton property polar solvent is 60-90% by weight.If not the content of protic polar solvent is less than 60% by weight, for the solubility minimizing of photoresist; If it surpasses 90% by weight, the relative content of water reduces, and therefore reduces the active of alkyl ammonium hydroxide and reduces sex change or crosslinked eurymeric and the ability of negative light resistance agent peeled off.
Preferably, based on the general assembly (TW) of constituent, the content range of water is 5-30% by weight in the constituent.If liquid water content is less than 5% by weight, the degree of dissociation of alkyl ammonium hydroxide becomes lower, causes sex change or crosslinked eurymeric and the ability of negative light resistance agent peeled off that reduce.If liquid water content surpasses 30% by weight, the activity of alkyl ammonium hydroxide becomes too high, thereby causes the corrosion of following metal film to suppress scarce capacity.
In the Main Components of constituent of the present invention, aromatic series polyhydroxy-alcohol and linear polyhydroxy-alcohol serve as corrosion inhibitor.
Based on the general assembly (TW) of constituent, the content of aromatic series polyhydroxy-alcohol can be 0.1-3% by weight.If the content of aromatic series polyhydroxy-alcohol is less than 0.1% by weight, to the corrosion inhibition ability reduction of following metal film; If it surpasses 3% by weight, remaining corrosion inhibitor itself will cause defective at subsequent process.
Based on the general assembly (TW) of constituent, the content of linear polyhydroxy-alcohol can be 0.1-5% by weight.If the content of linear polyhydroxy-alcohol is less than 0.1% by weight, for the corrosion inhibition ability reduction of following metal film; If its weighing scale surpasses 5%, remaining corrosion inhibitor itself will cause defective at subsequent process.
Preferably, aromatic series polyhydroxy-alcohol and linear polyhydroxy-alcohol have at least three oh groups.If the quantity of oh group is less than 3, these alcohol become lower with the adsorbability of metal surface, can cause corrosion to suppress scarce capacity.Further preferably, aromatic series polyhydroxy-alcohol corrosion inhibitor has at least one carboxylic group or alkyl group.If the quantity of carboxylic group or alkyl group is less than 1, these alcohol to the migration of metal surface reduces, and can cause corrosion to suppress scarce capacity.
The example of aromatic series polyhydroxy-alcohol comprises gallic acid, gallic acid methyl esters, gallic acid ethyl ester, Propylgallate, gallic acid butyl ester and composition thereof, and the example of linear polyhydroxy-alcohol may be glycerine, erythritol, D-sorbite, mannitol, xylitol and composition thereof.
Owing to the synergy that is used in combination aromatic series polyhydroxy-alcohol and linear polyhydroxy-alcohol and obtains, constituent of the present invention represents excellent corrosion-suppressing effect.Be to remove sex change and crosslinked photoresist, need to be such as the alkali cpd of alkyl ammonium hydroxide, and add alkali cpd has increased constituent to the remover constituent pH.High pH constituent peel off and flushing process in metal film corrosion below causing, therefore need corrosion inhibitor.Under high pH condition, aromatic series polyhydroxy-alcohol and linear polyhydroxy-alcohol represent better corrosion and suppress ability.
Generally, by corrosion inhibitor being adsorbed in the metal surface realization to the inhibition of corrosion.In case in the absorption, several corrosion inhibitors are adsorbed in the metal surface, to form a part layer thereon.The performance of corrosion inhibitor depends on the adsorptive power of metal surface and the density of molecular layer, and along with the increase of the density of adsorptive power and molecular layer, corrosion-inhibiting can also uprise.
Aromatic series polyhydroxy-alcohol corrosion inhibitor forms the resonant structure with a phenyl ring, simultaneously hydrogen atom is dissociated from its oh group; Therefore, it is adsorbed in metal with an inflexibility tabular (inflexible platy) structure.Linear polyhydroxy-alcohol corrosion inhibitor does not form a resonance structure, even the hydrogen atom of its oh group is dissociated; Therefore, it is adsorbed in metal with a flexible chain (flexible chain) structure.Therefore, even linear polyhydroxy-alcohol has low absorption affinity, linear polyhydroxy-alcohol is owing to its little adsorption area has the advantage that is adsorbed in small part.Because it is larger that the corrosion inhibitor in the remover moves to the trend of metal surface (surface migration), the quantity that is adsorbed in the corrosion inhibitor on the metal surface increases, and causes higher corrosion to suppress ability.
Aromatic series polyhydroxy-alcohol and linear polyhydroxy-alcohol represent different corrosion inhibitory characters owing to its metal adsorption structure is different.Aromatic series polyhydroxy-alcohol corrosion inhibitor can be adsorbed in the metal surface consumingly owing to its tabular resonant structure, simultaneously owing to its inflexibility structure has low-density molecular layer.Linear polyhydroxy-alcohol corrosion inhibitor is owing to its flexible chain structure has highdensity molecular layer, but it can not be adsorbed in the metal surface consumingly because this structure can not strong adsorption in metal.
For realizing that excellent corrosion suppresses, corrosion inhibitor should strong adsorption in the metal surface, and need form by this higher metal level of density.Because the strong adsorptive power of aromatic series polyhydroxy-alcohol and metal, and linear polyhydroxy-alcohol is adsorbed in the ability of the small part that the aromatic series polyhydroxy-alcohol can not adsorb, the corrosion that provides better on the whole metal level that is combined and used in of aromatic series polyhydroxy-alcohol and linear polyhydroxy-alcohol suppresses, and keeps simultaneously the ability of peeling off photoresist.On the contrary, when aromatic series polyhydroxy-alcohol or linear polyhydroxy-alcohol use separately, keep the ability of peeling off photoresist when then can not suppress in the corrosion of excellence.When using separately, need many corrosion inhibitors to suppress ability to obtain required corrosion, this has reduced the relative content of polar solvent, therefore reduced the remover constituent for the ability that makes the photoresist dissolving, or owing to the low solubility of corrosion inhibitor in constituent is difficult to use this constituent.
According to a required purpose, constituent of the present invention can further contain glycols and triazole type, as long as effect of the present invention can not degenerated.
Suitable glycols is the polyglycol of 100-400 etc. including but not limited to diglycol methyl ether (diethyleneglycol methylether), diethylene glycol monoethyl ether, diethylene glycol butyl ether, dipropyl glycol methyl ether, hexanediol, mean molecular weight; Suitable triazole type is including but not limited to benzotriazole, carboxyl benzotriazole, I-hydroxybenzotriazole, nitrobenzene and triazolam, dihydroxypropyl benzotriazole etc.
As mentioned above, have according to photoresistance remover constituent of the present invention and excellent to peel off eurymeric photoresist via dry-etching or ion implantation sclerosis and sex change, and be used for throwing the ability of the negative light resistance agent of eliminating method, and this photoresistance remover constituent can not corrode metal line below the photoresist layer in stripping process and ultrapure water flushing process.Especially, the synergy owing to from aromatic series polyhydroxy-alcohol corrosion inhibitor and the generation of linear polyhydroxy-alcohol corrosion inhibitor uses corrosion inhibitor in a small amount can obtain excellent corrosion-suppressing effect, and can not reduce the ability of peeling off photoresist.
Example
Thereafter, following example is intended to further illustrate the present invention, but can not limit its scope.
Example 1 to 9 and comparative example 1 to 21
The constituent for preparing example 1 to 9 and comparative example 1 to 21 by the component shown in the mixture table 1.
Mix and at room temperature carried out 1 hour or more of a specified duration, with abundant dissolved solid corrosion inhibitor, then filter via a fe fluon filtrator.
Experimental example
It is as follows that the stripping ability of the constituent that example 1 to 9 and comparative example 1 to 21 obtain and corrosion suppress capability evaluation:
(1) preparation eurymeric photoresist sample
(THMR-iP 3300, TOK) are coated on the Silicon Wafer with silicon nitride coated, form a photoresist pattern via exposure and developing process thereafter for the eurymeric photoresist.This pattern is transferred to the silicon nitride layer below the photoresist via dry etching method and obtains eurymeric photoresist sample.
(2) preparation negative light resistance agent sample
Negative light resistance agent (PMER N-HC600, TOK) is coated on the Silicon Wafer, forms a photoresist pattern via exposure, development and bake process thereafter.Aluminium and titanium sequentially spread in and obtain the negative light resistance agent pattern that a throwing removes on the Silicon Wafer.
The assessment of test case 1. stripping abilities
The test constituent is maintained at 60 ℃, and eurymeric photoresist sample and negative light resistance agent sample flooded its interior 20 minutes, with deionized water rinsing 30 seconds, and nitrogen drying then.* 200) and FE-SEM (enlargement ratio: remaining photoresist in the sample that sees drying * 10,000～* 50,000) at optical microscope (enlargement ratio:.
Test case 2. corrosion suppress capability evaluation
The test constituent is maintained at 60 ℃, and the negative light resistance agent sample flooded its interior 90 minutes.The sample that forms is used deionized water rinsing 30 seconds, and then nitrogen drying is 10 seconds.At FE-SEM (enlargement ratio: the degree of corrosion in see drying * 10,000～* 50,000) sample surfaces and cross section.In this test case, use and compare more harsh etching condition with 20 minutes common stripping conditions, in order to find the difference of degree of corrosion.
Table 1
As seen from Table 1, represent the excellent ability of peeling off eurymeric and negative light resistance agent according to example 1 to 9 of the present invention, and do not corrode Al/Ti, namely descend metal film.Yet the comparative example 1 to 21 that exceeds the scope of the invention represents low stripping ability and increases corrosion.
Although the present invention explains in conjunction with above specific embodiment, what need recognize is, those skilled in the art may make various adjustment and variation to the present invention, and these various adjustment and changing should fall in the application's claims limited range.
Claims (10)
1. a photoresistance remover constituent is characterized in that, comprises:
The alkyl ammonium hydroxide of 0.5-5% by weight;
The non-proton property polar solvent of 60-90% by weight;
The aromatic series polyhydroxy-alcohol of 0.1-3% by weight;
The linear polyhydroxy-alcohol of 0.1-5% by weight; And
The water of 5-30% by weight.
2. photoresistance remover constituent as claimed in claim 1 is characterized in that, described aromatic series polyhydroxy-alcohol comprises at least one carboxylic group or alkyl group and at least three oh groups.
3. photoresistance remover constituent as claimed in claim 1, it is characterized in that described aromatic series polyhydroxy-alcohol is selected from the group that is made of gallic acid, gallic acid methyl esters, gallic acid ethyl ester, Propylgallate, gallic acid butyl ester and composition thereof.
4. photoresistance remover constituent as claimed in claim 1 is characterized in that, described linear polyhydroxy-alcohol comprises at least three oh groups.
5. photoresistance remover constituent as claimed in claim 1 is characterized in that, described linear polyhydroxy-alcohol is selected from the group that is made of glycerine, erythritol, D-sorbite, mannitol, xylitol and composition thereof.
6. photoresistance remover constituent as claimed in claim 1 is characterized in that described alkyl ammonium hydroxide is selected from the group that is made of Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, TPAOH and composition thereof.
7. photoresistance remover constituent as claimed in claim 1, it is characterized in that, described non-proton property polar solvent is selected from by N, dinethylformamide, N, N-dimethyl acetamide, N, N'-diethyl acetamide, dimethyl sulfoxide (DMSO), N-METHYLFORMAMIDE, N, N'-dimethyl lactamide, 1-METHYLPYRROLIDONE, gamma-butyrolacton, propylene carbonate, 1, the group that 3-dimethyl-2-imidazolidinone and composition thereof consists of.
8. photoresistance remover constituent as claimed in claim 1 is characterized in that, described photoresistance remover constituent also comprises glycols and triazole type.
9. photoresistance remover constituent as claimed in claim 8, it is characterized in that described glycols is selected from the group that polyglycol of being 100-400 by diglycol methyl ether, diethylene glycol monoethyl ether, diethylene glycol butyl ether, dipropyl glycol methyl ether, hexanediol, mean molecular weight and composition thereof consists of.
10. photoresistance remover constituent as claimed in claim 8, it is characterized in that described triazole type is selected from the group that is made of benzotriazole, carboxyl benzotriazole, I-hydroxybenzotriazole, nitrobenzene and triazolam, dihydroxypropyl benzotriazole and composition thereof.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100044444A KR101169332B1 (en) | 2010-05-12 | 2010-05-12 | Photoresist stripper composition |
| KR10-2010-0044444 | 2010-05-12 | ||
| PCT/KR2011/003501 WO2011142600A2 (en) | 2010-05-12 | 2011-05-12 | Photoresist stripper composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102893218A true CN102893218A (en) | 2013-01-23 |
| CN102893218B CN102893218B (en) | 2015-08-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180023169.3A Active CN102893218B (en) | 2010-05-12 | 2011-05-12 | Photoresistance remover constituent |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5590364B2 (en) |
| KR (1) | KR101169332B1 (en) |
| CN (1) | CN102893218B (en) |
| TW (1) | TWI545190B (en) |
| WO (1) | WO2011142600A2 (en) |
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| CN106997158A (en) * | 2016-01-22 | 2017-08-01 | 易案爱富科技有限公司 | Photoresist removal remover composition |
| CN107271450A (en) * | 2017-06-20 | 2017-10-20 | 深圳市华星光电技术有限公司 | A kind of detection method of polyamide/silicon nitride film compactness |
| CN108424818A (en) * | 2017-02-14 | 2018-08-21 | 东友精细化工有限公司 | Cleaning masks liquid composition |
| CN109195720A (en) * | 2016-05-23 | 2019-01-11 | 富士胶片电子材料美国有限公司 | For the stripping composition from semiconductor substrate removal photoresist |
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| CN103441086A (en) * | 2013-08-29 | 2013-12-11 | 京东方科技集团股份有限公司 | Method for detecting light resistance layer ion implantation stopping capacity |
| CN103441086B (en) * | 2013-08-29 | 2016-01-06 | 京东方科技集团股份有限公司 | Detect the method for photoresist layer ion implantation blocking capability |
| US9279674B2 (en) | 2013-08-29 | 2016-03-08 | Boe Technology Group Co., Ltd | Method of testing blocking ability of photoresist blocking layer for ion implantation |
| CN106997158A (en) * | 2016-01-22 | 2017-08-01 | 易案爱富科技有限公司 | Photoresist removal remover composition |
| CN109195720A (en) * | 2016-05-23 | 2019-01-11 | 富士胶片电子材料美国有限公司 | For the stripping composition from semiconductor substrate removal photoresist |
| US10947484B2 (en) | 2016-05-23 | 2021-03-16 | Fujifilm Electronic Materials U.S.A., Inc. | Stripping compositions for removing photoresists from semiconductor substrates |
| CN109195720B (en) * | 2016-05-23 | 2021-10-29 | 富士胶片电子材料美国有限公司 | Stripping composition for removing photoresist from semiconductor substrate |
| CN108424818A (en) * | 2017-02-14 | 2018-08-21 | 东友精细化工有限公司 | Cleaning masks liquid composition |
| CN107271450A (en) * | 2017-06-20 | 2017-10-20 | 深圳市华星光电技术有限公司 | A kind of detection method of polyamide/silicon nitride film compactness |
| WO2019024892A1 (en) * | 2017-08-03 | 2019-02-07 | 无锡华瑛微电子技术有限公司 | Photoresist stripping solution and method of stripping photoresist |
| US11448966B2 (en) | 2017-08-03 | 2022-09-20 | Huaying Research Co., Ltd | Photoresist-removing liquid and photoresist-removing method |
| US11208616B2 (en) | 2019-04-24 | 2021-12-28 | Fujifilm Electronic Materials U.S.A., Inc. | Stripping compositions for removing photoresists from semiconductor substrates |
| CN110396315A (en) * | 2019-07-22 | 2019-11-01 | 深圳市华星光电技术有限公司 | It is modified to repair liquid, preparation method and the method for repairing color blocking |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011142600A3 (en) | 2012-03-15 |
| TWI545190B (en) | 2016-08-11 |
| KR20110124955A (en) | 2011-11-18 |
| JP5590364B2 (en) | 2014-09-17 |
| KR101169332B1 (en) | 2012-07-30 |
| TW201204828A (en) | 2012-02-01 |
| WO2011142600A2 (en) | 2011-11-17 |
| JP2013527992A (en) | 2013-07-04 |
| CN102893218B (en) | 2015-08-19 |
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