CN103425003A - Resist stripping agent - Google Patents
Resist stripping agent Download PDFInfo
- Publication number
- CN103425003A CN103425003A CN2013103067244A CN201310306724A CN103425003A CN 103425003 A CN103425003 A CN 103425003A CN 2013103067244 A CN2013103067244 A CN 2013103067244A CN 201310306724 A CN201310306724 A CN 201310306724A CN 103425003 A CN103425003 A CN 103425003A
- Authority
- CN
- China
- Prior art keywords
- weight portions
- water
- corrosion inhibiter
- remover combination
- photoresist remover
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention provides a photoinduced resist stripping agent composition which comprises organic amine, diethylene glycol monoalkyl ether, an aprotic polar solvent N, N-dimethylacetamide, a preservative and water. The resist stripping agent does not corrode metal wiring during the process of stripping resist films used for electronic circuit layout or metal wiring of display elements, and has excellent resist film strippability.
Description
Technical field
The present invention relates to resist clean technologies field, relate in particular to a kind of for removing the remover combination of photolithography method etchant resist used.
Background technology
Usually, photoresist is requisite material in photolithography process, and photolithography process generally is applied to integrated circuit (integrated circuit, IC), large scale integrated circuit (large scale integration, LSI), the manufacture of the semiconductor device such as VLSI (very large scale integrated circuit) (very large scale integration, VLSI) and the image display devices such as liquid crystal display, flat-panel monitor.For example, semiconductor device is to form photoresist on the inorganic substrates such as silicon, after utilizing mask to be exposed to described photoresist rete, carries out development treatment, thereby forms the photoresist pattern.After described photoresist pattern is carried out to etching and DIFFUSION TREATMENT, described photoresist pattern film is peeled off to removal from inorganic substrate, thereby make semiconductor device.
After carrying out photolithography technique, the etchant resist of light need at high temperature be stripped from solution removal, but in this process, exists the lower metal film may be stripped from too quickly the problem of solution corrosion.
Due to described etchant resist stripping solution, there is the problem of the extent of corrosion quickening of metal line.In order to address the above problem, people study the preparation method of the etchant resist stripping solution for preventing the metal line corrosion energetically.
Usual way is to add corrosion inhibitor in the potpourri of acid amides and organic amine, and described potpourri is prevented to corrosion of metal in metal line as the etchant resist stripping solution, and the method has pointed out that organic amine is preferably used monoethanolamine.In addition, pointed out the suitable consumption of corrosion inhibitor, and if while surpassing suitable consumption, the peeling off effect and will reduce of described photoresist film.
Summary of the invention
The present invention does in view of the above problems, and its purpose is to provide a kind of process peeling off for the etchant resist of Butut electronic circuit or display element metal line, does not corrode metal line, and has the etchant resist remover combination of outstanding etchant resist fissility.
For solving the problems of the technologies described above, the invention provides a kind of photoresist remover combination, it comprises organic amine, monoalkyl ethers of diethylene glycol, aprotic polar solvent DMA, corrosion inhibiter and water.
Wherein, described organic amine 10 weight portions～50 weight portions, described monoalkyl ethers of diethylene glycol 40 weight portions～80 weight portions, described aprotic polar solvent N, N-dimethyl acetamide 10 weight portions～25 weight portions, described corrosion inhibiter 20 weight portions～28 weight portions, described water 20 weight portions～30 weight portions.
Wherein, described organic amine is monoethanolamine, ethylenediamine, 2-(2-amino ethoxy) ethanol, AEEA, diethanolamine, amino two propylamine, 2-methylaminoethanol, triithylamine base ethanol.
Wherein, described monoalkyl ethers of diethylene glycol is general formula HOCH
2CH
2-O-CH
2CH
2-O-R
1The structure meaned, wherein, R
1It is the alkyl that carbon number is 1-8.
Wherein, described corrosion inhibiter is by hexamethylene tetramine, Isosorbide-5-Nitrae-butynediol, neopelex, imidazoles and water.
Wherein, in described corrosion inhibiter, the percentage by weight of each component is respectively hexamethylene tetramine 10%, Isosorbide-5-Nitrae-butynediol 8%, neopelex 0.6%, imidazoles 0.4% and 81% water.
Wherein, the preparation method of described corrosion inhibiter is specially:
Hexamethylene tetramine, Isosorbide-5-Nitrae-butynediol, neopelex, imidazoles and water are mixed according to percentage by weight, stir 3～5 hours, obtain corrosion inhibiter.
Beneficial effect of the present invention:
Etchant resist remover combination provided by the invention, in the process of peeling off for the etchant resist of Butut electronic circuit or display element metal line, does not corrode metal line, and has outstanding etchant resist fissility.
Embodiment
The invention provides a kind of photoresist remover combination, it comprises organic amine 10 weight portions～50 weight portions, monoalkyl ethers of diethylene glycol 40 weight portions～80 weight portions, aprotic polar solvent N, N-dimethyl acetamide 10 weight portions～25 weight portions, corrosion inhibiter 20 weight portions～28 weight portions, water 20 weight portions～30 weight portions.
Described organic amine can utilize one-level fatty amine, secondary aliphatic amine, three grades of fatty amines etc., and they can use separately or more than one mix use.Described one-level fatty amine has monoethanolamine, ethylenediamine, 2-(2-amino ethoxy) ethanol, AEEA etc.Described secondary aliphatic amine has diethanolamine, amino two propylamine, 2-methylaminoethanol etc.Described three grades of fatty amines have triithylamine base ethanol.Preferably use monoethanolamine in described organic amine.The use amount of described organic amine is 10 weight portions～50 weight portions, if its content is less than 10 weight portions, can cause the stripping performance of resist to reduce, if its content is greater than 50 weight portions, and can the heavy corrosion metal.Described amines is strong alkaline substance, it is penetrated in the macromolecule parent of etchant resist rotten and crosslinked under the various process conditions such as dry etching or wet etching, ashing or ion implantation technology forcefully, and the saboteur is interior or intermolecular gravitation.The effect of described amines is, in its etchant resist on residuing in substrate, in the part of fragile structure, forms space, in order to etchant resist is changed into to noncrystalline high-molecular gel piece, thereby can be easy to peel off the etchant resist be attached on substrate.
The organic solvent monoalkyl ethers of diethylene glycol is general formula HOCH
2CH
2-O-CH
2CH
2-O-R
1The structure meaned, wherein, R
1It is the alkyl that carbon number is 1-8, be preferably at least one compound in diethylene glycol methyl ether, DGDE, butyl carbitol, diglycol propyl ether, while under hot conditions, carrying out the etchant resist stripping process, if using boiling point is the monoalkyl ethers of diethylene glycol solvent more than 180 ℃, be difficult for the volatilization phenomenon occurs, thereby can make the etchant resist remover keep the composition ratio at use initial stage.
The addition of monoalkyl ethers of diethylene glycol is 40 weight portions～80 weight portions, if the content of monoalkyl ethers of diethylene glycol is less than 40 weight portions, because the polar solvent and the amines that relatively increase can make the metal line heavy corrosion, and by the high molecular dissolving power deficiency of amines and polar solvent gel (gel) change, can make the ability of peeling off etchant resist reduce; If the content of glycol ether compound is too much, the content of the polar solvent ability reduction that minimizing can make to peel off etchant resist relatively.
The aprotic polar solvent DMA has the advantages that to prevent from mainly betiding the bad phenomenon that the etchant resist in matting adheres to again, simultaneously, helps amines to be penetrated into etchant resist inner and peel off etchant resist.
The addition of aprotic polar solvent DMA is 10 weight portions～25 weight portions, if be less than 10 weight portions, can't prevent that etchant resist from adhering to generation again.
Described corrosion inhibiter is comprised of hexamethylene tetramine, Isosorbide-5-Nitrae-butynediol, neopelex, imidazoles and water.
In described corrosion inhibiter, the percentage by weight of each component is respectively hexamethylene tetramine 10%, Isosorbide-5-Nitrae-butynediol 8%, neopelex 0.6%, imidazoles 0.4% and 81% water.
Wherein, the preparation method of described corrosion inhibiter is specially:
Hexamethylene tetramine, Isosorbide-5-Nitrae-butynediol, neopelex, imidazoles and water are mixed according to percentage by weight, stir 3～5 hours, obtain corrosion inhibiter.
Below adopt embodiment to describe embodiments of the present invention in detail, to the present invention, how the application technology means solve technical matters whereby, and the implementation procedure of reaching technique effect can fully understand and implement according to this.
The preparation of embodiment 1 corrosion inhibiter
50g hexamethylene tetramine, Isosorbide-5-Nitrae-butynediol 40g, neopelex 3g, imidazoles 2g and 405g water are mixed, stir 5 hours, obtain corrosion inhibiter.
Embodiment 2 removers 1
By monoethanolamine 35g, diethylene glycol monomethyl ether 60g, DMA 15g, the corrosion inhibiter 25g of embodiment 1 preparation, water 25g mixes, and stirs, and obtains remover 1.
Comparative example 1 is remover 1 relatively
By monoethanolamine 35g, diethylene glycol monomethyl ether 60g, DMA 15g, water 25g mixes, and stirs, and obtains relatively remover 1.
Comparative example 2 is remover 2 relatively
By monoethanolamine 35g, diethylene glycol monomethyl ether 60g, DMA 15g, the corrosion inhibiter 18g of embodiment 1 preparation, water 25g mixes, and stirs, and obtains relatively remover 2.
Comparative example 3 is remover 3 relatively
By monoethanolamine 35g, diethylene glycol monomethyl ether 60g, DMA 15g, the corrosion inhibiter 32g of embodiment 1 preparation, water 25g mixes, and stirs, and obtains relatively remover 3.
By following experiment, fissility, the corrosivity of each embodiment are investigated and analyzed.
The fissility experiment
For analyzing the removal efficiency of remover combination, adopt the eurymeric anti-corrosion agent composition (DSAM-200 generally used, Dong Jin Chemical Industry Co., Ltd., trade name), and under the 2500rpm condition, it is spun on the silicon of 3 inches, then on hot plate, with 100 ℃ of temperature, carry out the thermal treatment in 90 seconds.Afterwards, the millimicron (nanometer) of take is measured the coating thickness of 1.5 μ m as unit, and is exposed and develop, and finally at 120 ℃ of temperature, carries out the thermal treatment of 3 minutes, obtains thus resist film.When the temperature of remover remains on 70 ℃, described chip be impregnated in the remover of putting down in writing in embodiment and comparative example, then measure respectively the stripping performance of dipping after 5 minutes, 10 minutes and 15 minutes, and estimated according to following standard.
◎ ... flood in latter 2 minutes and remove;
Zero ... flood in latter 5 minutes and remove;
△ ... remove in 5 to 10 minutes after dipping;
* ... do not complete removal after 10 minutes yet.
Eurymeric anti-corrosion agent composition (DSAM-200), consist of the alkali soluble solvent as film forming component, and consist of two nitrine quinoness and their organic solvent of solubilized as photographic composition as used herein.The potpourri that described alkali soluble solvent is formaldehyde and Cresol Isomeric Compound carries out synthetic phenolics after condensation reaction under sour catalytic action.In described Cresol Isomeric Compound potpourri, the shared ratio of Cresol Isomeric Compound is that metacresol accounts for 60wt%, and paracresol accounts for 40wt%.Described photographic composition has been used 2,3, and 4,4-tetrahydroxybenzophenone (2,3,4,4-Tetrahydroxybenzophenone) He 1,2-diazido naphthoquinone-5-sulfonic acid chloride (1,2-Naphthoquinone diazide-5-sulfonyl chloride) esterification occurs under the catalytic action of triethylamine (Triethylamine) and synthetic 2,3,4,4-tetrahydroxybenzophenone-1,2-diazido naphthoquinone-5-sulfonic acid chloride.Synthetic phenolics 20g and Photoactive compounds 5g are dissolved in ethylene glycol monoethyl ether acetate (ethylene glycol mono ethyl ether acetate) 75g, and the filtrator by 0.2 μ m makes photosensitive resist agent composition after filtering, i.e. eurymeric resist constituent (DSAM-200).
Corrosion test
At first, remover is dissolved in to pure water, makes the aqueous solution of 10wt%, then in this aqueous solution with normal temperature dipping aluminium foil 3 hours, afterwards, described aluminium foil surface is irradiated, and according to following standard evaluation aluminium foil color blackening degree.
● ... become aterrimus (heavy corrosion);
Zero ... about 50% blackening (confirming corrosion a little);
△ ... less than 20% blackening (confirm corrosion, but do not affect result of use);
* ... without change color (not corrosion).
The results are shown in Table 1.
Table 1
As can be seen from Table 1, adopt the stripping performance excellence of corrosion inhibitor stripper of the present invention, to human body, without harm, operability is outstanding, and the substrate with metal film is not produced to corrosion.
All above-mentioned these intellecture properties of primary enforcement, do not set restriction this new product of other forms of enforcement and/or new method.Those skilled in the art will utilize this important information, and foregoing is revised, to realize similar implementation status.But all modifications or transformation belong to the right of reservation based on new product of the present invention.
The above, be only preferred embodiment of the present invention, is not the present invention to be done to the restriction of other form, and any those skilled in the art may utilize the technology contents of above-mentioned announcement to be changed or be modified as the equivalent embodiment of equivalent variations.But every technical solution of the present invention content that do not break away from, any simple modification, equivalent variations and the remodeling above embodiment done according to technical spirit of the present invention, still belong to the protection domain of technical solution of the present invention.
Claims (7)
1. a photoresist remover combination, is characterized in that: comprise organic amine, monoalkyl ethers of diethylene glycol, aprotic polar solvent DMA, corrosion inhibiter and water.
2. photoresist remover combination as claimed in claim 1, it is characterized in that: described corrosion inhibiter is comprised of hexamethylene tetramine, Isosorbide-5-Nitrae-butynediol, neopelex, imidazoles and water.
3. photoresist remover combination as claimed in claim 1 or 2, it is characterized in that: in described corrosion inhibiter, the percentage by weight of each component is respectively hexamethylene tetramine 10%, Isosorbide-5-Nitrae-butynediol 8%, neopelex 0.6%, imidazoles 0.4% and 81% water.
4. photoresist remover combination as described as claims 1 to 3, it is characterized in that: described organic amine 10 weight portions～50 weight portions, described monoalkyl ethers of diethylene glycol 40 weight portions～80 weight portions, described aprotic polar solvent N, N-dimethyl acetamide 10 weight portions～25 weight portions, described corrosion inhibiter 20 weight portions～28 weight portions, described water 20 weight portions～30 weight portions.
5. photoresist remover combination as described as claim 1 to 4 is characterized in that: described organic amine is monoethanolamine, ethylenediamine, 2-(2-amino ethoxy) ethanol, AEEA, diethanolamine, amino two propylamine, 2-methylaminoethanol, triithylamine base ethanol.
6. photoresist remover combination as described as claim 1 to 5, it is characterized in that: described monoalkyl ethers of diethylene glycol is general formula HOCH
2CH
2-O-CH
2CH
2-O-R
1The structure meaned, wherein, R
1It is the alkyl that carbon number is 1-8.
7. photoresist remover combination as described as claim 1 to 6, it is characterized in that: the preparation method of corrosion inhibiter is specially:
Hexamethylene tetramine, Isosorbide-5-Nitrae-butynediol, neopelex, imidazoles and water are mixed according to percentage by weight, stir 3～5 hours, obtain corrosion inhibiter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103067244A CN103425003A (en) | 2013-07-19 | 2013-07-19 | Resist stripping agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103067244A CN103425003A (en) | 2013-07-19 | 2013-07-19 | Resist stripping agent |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103425003A true CN103425003A (en) | 2013-12-04 |
Family
ID=49649945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013103067244A Pending CN103425003A (en) | 2013-07-19 | 2013-07-19 | Resist stripping agent |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103425003A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101017333A (en) * | 2006-02-06 | 2007-08-15 | 东进世美肯株式会社 | Positive photosensitive resist release agent compositions |
| CN101614970A (en) * | 2008-06-27 | 2009-12-30 | 安集微电子（上海）有限公司 | A kind of photoresist cleansing composition |
| CN101630127A (en) * | 2008-07-18 | 2010-01-20 | 株式会社东进世美肯 | Photoresist stripper composition in fabrication of color filter array of liquid crystal display |
| WO2011142600A2 (en) * | 2010-05-12 | 2011-11-17 | Enf Technology Co., Ltd. | Photoresist stripper composition |
-
2013
- 2013-07-19 CN CN2013103067244A patent/CN103425003A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101017333A (en) * | 2006-02-06 | 2007-08-15 | 东进世美肯株式会社 | Positive photosensitive resist release agent compositions |
| CN101614970A (en) * | 2008-06-27 | 2009-12-30 | 安集微电子（上海）有限公司 | A kind of photoresist cleansing composition |
| CN101630127A (en) * | 2008-07-18 | 2010-01-20 | 株式会社东进世美肯 | Photoresist stripper composition in fabrication of color filter array of liquid crystal display |
| WO2011142600A2 (en) * | 2010-05-12 | 2011-11-17 | Enf Technology Co., Ltd. | Photoresist stripper composition |
Non-Patent Citations (1)
| Title |
|---|
| 刘建虎: "多功能化学清洗缓蚀剂的研制", 《中国优秀硕士学位论文全文数据库 工程科技I辑》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6277511B2 (en) | Resist stripper | |
| TWI402636B (en) | Composition for removing a photoresist | |
| JP6006711B2 (en) | Photoresist stripping composition for LCD production containing primary alkanolamine | |
| JP5318773B2 (en) | Stripping liquid composition and resin layer peeling method using the same | |
| KR20090072546A (en) | Composition for removing photoresist and method of manufacturing array substrate using the same | |
| CN106062637B (en) | For removing the remover combination of photoresist and using the method for its stripping photoresist | |
| TWI514094B (en) | Stripper composition for thick negative photoresist | |
| CN101017333A (en) | Positive photosensitive resist release agent compositions | |
| TW201447513A (en) | Photoresist stripping solution composition | |
| JP2015014791A (en) | Remover composition for dry film resist and method for removing dry film resist using the composition | |
| JP2000039727A (en) | Stripper composition for photoresist | |
| JPWO2005040931A1 (en) | Composition for stripping photoresist and stripping method | |
| TW546553B (en) | Photoresist stripping liquid composition and a method of stripping photoresists using the same | |
| JP5809444B2 (en) | Stripper for photoresist | |
| CN102103334B (en) | Resist remover composition | |
| WO2020022491A1 (en) | Cleaning method | |
| JP2004177740A (en) | Resist stripper | |
| JP2019120926A (en) | Stripping composition for removing dry film resist and method for stripping dry film resist using the same | |
| CN103425003A (en) | Resist stripping agent | |
| CN103425002A (en) | Resist stripping agent | |
| KR101213735B1 (en) | Composition for removing a photoresist | |
| KR101733729B1 (en) | Photoresist stripper composition and method of stripping photoresist using the same | |
| JP7420664B2 (en) | Cleaning composition for removing resin masks | |
| JP2004205675A (en) | Resist stripping agent | |
| WO2005035828A1 (en) | Photoresist stripping composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20131204 |