CN101017333A - Positive photosensitive resist release agent compositions - Google Patents
Positive photosensitive resist release agent compositions Download PDFInfo
- Publication number
- CN101017333A CN101017333A CN 200610003266 CN200610003266A CN101017333A CN 101017333 A CN101017333 A CN 101017333A CN 200610003266 CN200610003266 CN 200610003266 CN 200610003266 A CN200610003266 A CN 200610003266A CN 101017333 A CN101017333 A CN 101017333A
- Authority
- CN
- China
- Prior art keywords
- ether
- general formula
- weight
- positive light
- methyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
This invention discloses one positive light anti-erosion agent peeling agent combination, which comprises the following parts: a, occupying organic amine for weight of 10 to 50; b, monoethylene glycol monoalkyl ether for weigth of 0 to 70 percent; c, non photon electrode solvent for weight of 20 to 90; d, based on the said three component total weight for 0.01 to 10 non-ion surface active agent. This invention relates to positive light anti-erosion peel agent combination to etch process with excellent solve property and peeling property of pattern film for light resistance.
Description
Technical field
The present invention relates to a kind of positive light anti-etching agent remover combination, it is to through etch processes etc. and rotten photoresist graphic films has excellent dissolubility and fissility, and when mixing the back with water as cleaning fluid (rinse), corrosion to aluminium or copper base is little, evaporation capacity is few, thereby not only favourable to operating environment, and safe, and available water is carried out cleaning treatment, particularly therefore low temperature stripping performance excellence has very high practicality.
Background technology
Generally speaking, transistor, integrated circuit (IC), large scale integrated circuit (LSI), VLSI (very large scale integrated circuit) semiconductor devices (Device) such as (VLSI) and liquid crystal indicator prepare by photo-engraving process.For example, semiconductor device is to form photoresist on inorganic substrates such as silicon, utilize mask that described photoresist rete is exposed after, carry out development treatment, thereby form the photoresist pattern.After described photoresist pattern carried out etching and DIFFUSION TREATMENT, described photoresist pattern film is peeled off removal from inorganic substrate, thereby make semiconductor device.Here employed photoresist is generally positive light anti-etching agent or negative photoresist, but main use recently is the positive light anti-etching profit that helps forming fine pattern.Present widely used positive light anti-etching agent generally is made of phenolics (Phenol aldehyderesin) and photoactive substance.The current liquid crystal indicator that receives much concern, the manufacture method of its ultra-thin liquid crystal indicator (TFT:Thin Film Transister) module section lithoprinting (Photo Lithography) technology when making semiconductor device is identical.For example, when making the TFT module, the mask by regulation is removed exposed portion with developer solution, and remainder is carried out etching as resist to it behind the resist irradiation ultraviolet radiation that forms on the substrate.Concrete etching condition is different with the difference of etch target, but roughly is divided into Wet-type etching (Wet Etching) that utilizes electrochemical reaction in solution and the dry-etching (Dry Etching) that utilizes free radical reaction in gas phase.Described etch process causes complicated chemical reaction according to its etching condition on the resist surface, and forms the rotten profit against corrosion of superficial layer under this chemical reaction.That is, rotten resist causes the plasma gas that is used for dry-etching and the reaction between substrate and the sensitization liquid and generates secondary product.Generally speaking, described secondary product is made of etch processes substrate, lower basal plate, sensitization liquid and plasma etch gases, and is subjected to the influence of kind, process conditions and the employed substrate of Etaching device.Existing data shows, polymer substance is in case go bad crosslinked mutually (Crosslink), also can not remove [" Plasma Etching and Reactive lon Etching " by plasma etching process so, SPIE (Symposium on Microlithography), 1991].If can not stably remove rotten polymer substance, so on the etched pattern or between pattern and pattern, will produce the residue of resist.Even this level of residue is few, also can become the main cause that broken string and short circuit phenomenon in technologies such as follow-up film forming (Film-Forming), lithoprinting, etching, occur, and the problems referred to above can cause reliability of products, production efficiency and performance to reduce.But described rotten resist is difficult to remove with general photoresist release agent.
Promptly, in order to remove, adopt by general phenol (Phenol) and derivant, alkyl benzene sulphonate (alkyl benzene sulphonate) and chloride-based (chloride base) solution that organic solvent constituted as remover by the sharp formed corrosion-resisting pattern of the positive light anti-etching that is used for semiconductor device and liquid crystal indicator.But described remover is because of containing phenolic compound and the chloride-based organic solvent has toxicity, lower metal layer there is corrosive attack, be difficult to dispose waste liquid, and described remover is non-water soluble substance, therefore can makes the cleaning after peeling off become complicated unavoidably.
In order to remedy above-mentioned shortcoming, people have invented the water-soluble remover that is made of organic amine and aprotic polar solvent (Polaraprotic solvent).As a reference, the molten profit of described proton polarity (Polar protic solvent) is meant and contains the hydrogen atom that is incorporated into strong electronegativity (electronegativity) element in the solvent molecule, thereby the solvent that combines with hydrogen easily, and aprotic polar solvent (Polar aprotic solvent) is meant because of not containing the solvent that described hydrogen atom has low polarity.But this water-soluble remover when particularly washing by infusion process, because of wherein organic amine resolves into alkalescence, thereby has corrosive attack to metals such as aluminium and copper in washing.Owing to there are the problems referred to above, therefore, after peeling off, not only need to utilize alcohol organic solvent to carry out cleaning treatment, and because of remover its organic amine after mixing decomposes, thereby aluminium and copper etc. is had corrosive attack.And this corrosive attack is must avoid when making the semiconductor device of miniaturization day by day.For improve operability, security, to the corrosivity of substrate and to the stripping performance of the rotten film that forms by etch processes, developed multiple remover combination at present, but its stripping performance is all unsatisfactory.
And recently, (Patten) is tending towards miniaturization along with processing graphic pattern, and it is more and more harsher that the etching condition of metal and oxide film becomes, thereby also increasing to the damage of resist, and cause resist rotten.Based on above-mentioned various reasons, even need a kind ofly adopt above-mentioned organic solvent to handle, also can remove the residue on the resist substrate fully, have the composition of strong stripping ability.
Summary of the invention
For addressing the above problem, the invention provides a kind of have excellent fissility, stability and operability, do not corrode the anodal photoresist release agent compositions of the metal film of substrate.
For achieving the above object, positive light anti-etching agent remover combination of the present invention comprises:
A) account for the organic amine of 10-50 weight %;
B) account for 0-70 weight %, can mix with described organic amine, solubility parameters (solubilityparameter) is about the organic solvent of 8-15;
C) account for the aprotic polar solvent of 20-90 weight %;
D) account for 0.01-10 weight % non-ionic surfactant.
Optimal way is that composition of the present invention comprises:
A) account for the organic amine of 10-30 weight %;
B) account for 0-70 weight %, with the diglycol monotertiary alkyl ether (diethylene glycol monoalkyl ethers) of following general formula 1 expression;
C) account for the aprotic polar solvent of 20-90 weight %;
D) based on the general assembly (TW) of described three kinds of compositions, account for 0.01-10 weight %, be selected from least a non-ionic surfactant in the epoxyethane block copolymer of representing with the alcohol alkoxylates compound (alcohol alkoxylate) and the general formula 3 of following general formula 2 expressions (ethyleneoxide block copolymer).
[general formula 1]
HOCH
2CH
2-O-CH
2CH
2-O-R
1, R wherein
1Be that carbon number is the alkyl of 1-4;
[general formula 2]
Wherein, R is a hydrogen, or carbon number is alkyl or the phenyl of 6-12; M, n respectively are the integer of 1-10, the molal quantity of representative ring oxidative ethane (EO);
[general formula 3]
Wherein, R is a hydrogen, and perhaps carbon number is the alkyl of 6-12; M is the integer of 1-10, the molal quantity of representative ring oxidative ethane (EO).
Positive light anti-etching agent remover combination of the present invention is to through technology such as etch processes and rotten photoresist pattern film has excellent dissolubility and fissility, and when mixing the back with water as cleaning fluid (rinse), corrosion to aluminium or copper base is little, evaporation is few, not only favourable to operating environment, and stability is high, available water is carried out cleaning treatment, and particularly therefore low temperature stripping performance excellence has very strong practicality.
Embodiment
Below in conjunction with embodiment the present invention is described in more detail.
In the positive light anti-etching agent remover combination of the present invention, described organic amine can utilize one-level fatty amine, secondary aliphatic amine, three grades of fatty amines etc., and they can use separately or more than one mix use.Described one-level fatty amine has monoethanolamine (Monoethanolamine), ethylenediamine (ethylenediamine), 2-(2-amino ethoxy) ethanol (2-(2-Aminoethoxy) ethano1), AEEA (2-(2-Aminoethylamino) ethanol) etc.Described secondary aliphatic amine has diethanolamine (diethanolamine), amino two propylamine (Amino bis proplyamine), 2-methylaminoethanol (2-methylamino ethanol) etc.Described three grades of fatty amines have triithylamine base ethanol (triethylamino ethanol).The preferred monoethanolamine that uses in the described organic amine.The use amount of described organic amine is preferably 10-50 weight %, if its content less than 10 weight %, can cause the stripping performance of resist to reduce, if its content greater than 50 weight %, is understood corroding metal.
Can mix with described organic amine, solubility parameter is the polar solvent of 8-15, the preferred diglycol monotertiary alkyl ether that uses with following general formula 1 expression.
[general formula 1]
HOCH
2CH
2-O-CH
2CH
2-O-R
1, R wherein
1Be that carbon number is the alkyl of 1-4.
As diglycol monotertiary alkyl ether as described in general formula 1 expression, the preferred boiling point that uses is equal to or greater than 180 ℃, can with the endless butyl glycol that mixes of water (butylglycol), butyl diethylene glycol (butyldiglycol), butyl triethylene glycol (butyltriglycol), Propylene Glycol (methylglycol), methyl diethylene glycol (methyldiglycol), methyl triethylene glycol (methyltriglycol), and methyl propanediol (methylpropyleneglycol) etc., the butyl diethylene glycol that especially surface tension is low, burning-point is high is more effective.Account for the 0-70 weight % of total composition as the use amount of the represented diglycol monotertiary alkyl ether of general formula 1.
Described aprotic polar solvent has dimethyl sulfoxide (DMSO) (dimethyl sulfoxide), N-N-methyl-2-2-pyrrolidone N-(N-methyl-2-pyrrolidone), N, N-dimethyl acetamide (N, N-dimethylacetamide), N, dinethylformamide (N, N-dimethylformamide), N, N-methylimidazole (N, and gamma-butyrolacton (γ-butyrolactone) etc. N-dimethylimidazol),, these solvents can use separately, but better the two or more results of use that combine.Described aprotic polar solvent preferably uses dimethyl sulfoxide (DMSO), N-N-methyl-2-2-pyrrolidone N-, gamma-butyrolacton etc.The use amount of described aprotic polar solvent is preferably the 20-90 weight % based on whole composition weights, if its content less than 20 weight %, can cause resist removal ability to reduce, if its content greater than 90 weight %, can connect up by corroding metal.
At this moment, with regard to described organic solvent and polar solvent, even the independent use of described polar solvent also can play a role, but in order to obtain better effect, preferred two or more polar solvents mix use.And described organic solvent can not be given full play to its effect when using with amine component separately, therefore needs to mix with polar solvent by a certain percentage the back and uses.The use amount of the mixed solvent of described diglycol monotertiary alkyl ether and described aprotic polar solvent is preferably 40-90 weight %.At this moment, described ratio is advisable to be not more than 2 times of whole composition Semi-polarity solvent ratios.
And the present invention is in order to improve cleansing power, uses to be selected from at least a compound in the represented epoxyethane block copolymer of the alcohol alkoxylates compound of following general formula 2 expressions and general formula 3 as non-ionic surfactant.
[general formula 2]
Wherein, R is a hydrogen, or carbon number is alkyl or the phenyl of 6-12; M, n respectively are the integer of 1-10, the molal quantity of representative ring oxidative ethane (EO);
[general formula 3]
Wherein, R is a hydrogen, perhaps carbon number be 6-12 alkyl, m is the integer of 1-10, the molal quantity of representative ring oxidative ethane (EO).
Described non-ionic surfactant is preferably from polyoxypropylene glycol ether (polyoxypropylene glycol ether), polyoxypropylene ethylether (polyoxypropyleneethyl ether), polyoxypropylene methyl ether (polyoxypropylene methyl ether), polyoxy third rare butyl ether (polyoxypropylene butyl ether), polyoxyethylene polypropylene glycol ether (polyoxyethylene polypropylene glycol ether), polyoxyethylene gathers third ethylether (polyoxy ethylene polypropylene ethyl ether), polyoxyethylene gathers third methyl ether (polyoxy ethylene polypropylene methyl ether), polyoxyethylene gathers at least a compound in third butyl ether (polyoxy ethylene polypropylene butyl ether).Based on total composition, the use amount of described non-ionic surfactant is 0.01-10 weight %, if its content is less than 0.0l weight %, can cause cleansing power to reduce, if its content is greater than 10 weight %, can cause in follow-up cleaning, producing a large amount of foams, reduce other composition relatively, thereby reduce stripping performance.
In addition, the general phenolic positive light anti-etching agent that constitutes by phenolics (novolak resin) and two diazonium quinone (Quinonediazide) class Photoactive compounds that adopts of the resist in the positive light anti-etching agent stripping means of the present invention.And corrosion inhibitor stripper of the present invention is applicable to the metamorphic layer of peeling off the resist surface, promptly to being coated with the glass substrate of silicon or aluminium, carries out dry-etching by fluorine or halogen gas, removes rotten resist thereby peel off.
Corrosion inhibitor stripper of the present invention, be applicable to peel off through the ashing treatment of plasma, ion inject, the irradiation of sputter particle such as (Sputtering) high energy and group (radical) and rotten resist metamorphic layer.
To between the boiling point, preferred temperature is 40-70 ℃ to the serviceability temperature scope of corrosion inhibitor stripper of the present invention in room temperature.
When the present invention utilizes corrosion inhibitor stripper to peel off resist, can adopt dipping method, promptly the substrate that is coated with resist be soaked certain hour in remover, also can adopt spray (spray) method.When using dipping method, can apply ultrasound wave simultaneously, shorten splitting time greatly with this.
Corrosion inhibitor stripper of the present invention can effectively be removed various organic polymer materials, for example, eurymeric resist, negative resist, electron beam (Electron beam) resist, x line (X-ray) resist, ion beam (Ion beam) resist, polyimide resin (Polyimide resin) resist etc.Result of study shows, and is particularly effective especially to the resist that is made of phenolics and adjacent naphthalene two diazonium diazide sulfonic acid esters (orthonaphto quinonediazide sulfonic acid ester) in the eurymeric resist.
Below the preferred embodiments of the present invention and comparative example are described.
By following experiment fissility, the corrosivity of each embodiment are investigated and analyzed.
[fissility experiment]
For analyzing the removal efficient of remover combination, adopt the eurymeric resist composition (DSAM-200 that generally uses, Dong Jin Chemical Industry Co., Ltd., trade name), and under the 2500rpm condition with its spin coating (spin coating) on 3 inches silicon, go up at hot plate (Hotplate) then and carry out the thermal treatment in 90 seconds with 100 ℃ of temperature.Afterwards, (nanometer) is the coating thickness that unit measures 1.5 μ m with millimicron, and exposes and develop, and carries out 3 minutes thermal treatment at last under 120 ℃ of temperature, obtains resist film thus.When the temperature of remover (stripper) remains on 70 ℃, described chip be impregnated in the remover of putting down in writing in embodiment and the comparative example, measure the stripping performance of dipping after 5 minutes, 10 minutes and 15 minutes then respectively, and estimate according to following standard.
◎ ... flood in back 2 minutes and remove;
Zero ... flood in back 5 minutes and remove;
△ ... removed in 5 to 10 minutes the dipping back;
* ... do not finish removal after 10 minutes yet.
Eurymeric resist composition (DSAM-200) is made of the alkali soluble solvent as film forming component as used herein, and is made of two nitrine quinone (Quinonediazide) compounds and their organic solvent of solubilized as photographic composition.Described alkali soluble solvent is that formaldehyde (formaldehyde) and cresols (cresol) mixture of isomers are carried out the synthetic phenolics in condensation reaction (condensation reaction) back under the catalytic action of acid.In the described cresols isomer mixture, the shared ratio of cresols isomeride is that metacresol (m-cresol) accounts for 60wt%, and paracresol (p-cresol) accounts for 40wt%.Described photographic composition has used 2,3, and 4,4-tetrahydroxybenzophenone (2,3,4,4-Tetrahydroxybenzophenone) with 1,2-diazido naphthoquinone-5-sulfonic acid chloride (1,2-Naphthoquinone diazide-5-sulfonyl chloride) esterification takes place and synthetic 2,3,4 under the catalytic action of triethylamine (Triethylamine), 4-tetrahydroxybenzophenone-1,2-diazido naphthoquinone-5-sulfonic acid chloride.Synthetic phenolics 20g and Photoactive compounds 5g are dissolved among ethylene glycol monoethyl ether acetate (the ethylene glycol mono ethyl etheracetate) 75g, and the filtrator by 0.2 μ m makes photosensitive resist agent composition after filtering, i.e. eurymeric resist constituent (DSAM-200).
[corrosivity experiment]
At first, remover is dissolved in pure water (purified water), make the aqueous solution of 10wt%, then in this aqueous solution with normal temperature dipping aluminium foil (Aluminum foil) 3 hours, afterwards, described aluminium foil surface is shone, and according to following standard evaluation aluminium foil color blackening degree.
● ... become aterrimus (heavy corrosion);
Zero ... about 50% blackening (confirming corrosion a little);
△ ... less than 20% blackening (confirm corrosion, but do not influence result of use);
* ... no change color (not corrosion).
[vaporization loss experiment]
Get the 20g remover and put into the beaker that diameter is 5cm (beaker), with 70 ℃ temperature heating, and each hour measurement once, measures altogether 6 times.The weight of measuring with the first time is benchmark, represents evaporation loss with number percent, with this evaporation loss is estimated.
[embodiment 1-18 and comparative example 1-10]
According to the proportioning that is described in table 1 below, organic amine, organic solvent class and polar solvent class are allocated, prepare stripper with this.According to the content of polar solvent, each remover is carried out the evaluation of aspects such as fissility, corrosivity and vaporization loss, its evaluation result is as shown in table 2 below.
[table 1]
| The composition of remover (wt%) | |||||||
| A | B | C | D | ||||
| Kind | Amount | Kind | Amount | Kind | Amount | Amount | |
| Embodiment 1 | MEA | 10 | BDG | 30 | GBL | 60 | 0.05 |
| Embodiment 2 | MEA | 10 | BDG | 50 | GBL | 40 | 0.05 |
| Embodiment 3 | MEA | 10 | BDG | 70 | GBL | 20 | 0.05 |
| Embodiment 4 | MEA | 10 | BDG | 30 | DMSO | 60 | 0.05 |
| Embodiment 5 | MEA | 20 | BDG | 40 | DMSO | 40 | 0.05 |
| Embodiment 6 | MEA | 30 | BDG | 50 | DMSO | 20 | 0.05 |
| Embodiment 7 | MEA | 10 | BDG | 30 | NMP | 60 | 0.05 |
| Embodiment 8 | MEA | 10 | BDG | 50 | NMP | 40 | 0.05 |
| Embodiment 9 | MEA | 10 | BDG | 70 | NMP | 20 | 0.05 |
| Embodiment 10 | MEA | 10 | DMSO GBL | 60 30 | 0.05 | ||
| Embodiment 11 | MEA | 20 | DMSO GBL | 50 30 | 0.05 |
In the table 1, A: organic amine, B: diglycol monotertiary alkyl ether, C: aprotic polar solvent, D: non-ionic surfactant, wherein, embodiment 1-5 is the polyoxypropylene glycol ether, embodiment 6-10 is the polyoxypropylene ethylether, and embodiment 11-14 is the polyoxyethylene polypropylene glycol ether, and embodiment 15-18 is the polyoxyethylene polypropylene glycol ether.
MEA: monoethanolamine (Monoethanolamine);
DEA: diethanolamine (diethanolamine);
TEA: triethanolamine (Triethanolamine);
BDG: butyl diethylene glycol (butyldiglycol);
BTG: butyl triethylene glycol (butyltriglycol);
MDG: diethylene glycol dimethyl ether (methyldiglycol);
GBL: gamma-butyrolacton (γ-butyrolactone);
NMP:N-methyl pyrrolidone (N-methyl pyrrolidone);
DMSO: dimethyl sulfoxide (DMSO) (dimethyl sulfoxide).
[table 2]
| Analyze | |||||
| Stripping performance | The Al corrosion | Evaporation capacity (%) | |||
| 20℃ | 50℃ | 80℃ | |||
| Embodiment 1 | ◎ | ◎ | ◎ | △ | 16 |
| Embodiment 2 | ○ | ◎ | ◎ | △ | 11 |
| Embodiment 3 | △ | ○ | ◎ | △ | 9 |
| Embodiment 4 | ◎ | ◎ | ◎ | △ | 22 |
| Embodiment 5 | ○ | ◎ | ◎ | △ | 18 |
| Embodiment 6 | ○ | ◎ | ◎ | △ | 16 |
| Embodiment 7 | △ | ◎ | ◎ | △ | 15 |
| Embodiment 8 | △ | ◎ | ◎ | △ | 10.5 |
| Embodiment 9 | × | ◎ | ◎ | △ | 8.5 |
| Embodiment 10 | ◎ | ◎ | ◎ | × | 17 |
| Embodiment 11 | ◎ | ◎ | ◎ | × | 12 |
| Embodiment 12 | ○ | ◎ | ◎ | △ | 10 |
| Embodiment 13 | ◎ | ◎ | ◎ | × | 14 |
| Embodiment 14 | ○ | ◎ | ◎ | × | 11 |
| Embodiment 15 | ○ | ○ | ◎ | △ | 8 |
| Embodiment 16 | ◎ | ◎ | ◎ | × | 17 |
| Embodiment 17 | ◎ | ◎ | ◎ | △ | 12 |
| Embodiment 18 | ○ | ◎ | ◎ | △ | 10 |
| Comparative example 1 | × | △ | ○ | ● | 33 |
| Comparative example 2 | × | × | × | ● | 58 |
| Comparative example 3 | × | × | × | × | 23 |
| Comparative example 4 | × | △ | △ | ● | 30 |
| Comparative example 5 | △ | △ | ○ | ● | 37 |
| Comparative example 6 | × | × | × | ● | 36 |
| Comparative example 7 | × | × | × | ● | 41 |
| Comparative example 8 | × | × | × | ○ | 39 |
| Comparative example 9 | × | × | × | ○ | 49 |
| Comparative example 10 | × | × | × | ○ | 46 |
As mentioned above, positive light anti-etching agent remover combination of the present invention comprises the ethylene oxide non-ionic surfactant shown in described general formula 2 or the general formula 3, thereby its cleansing power significantly improves, the stripping performance excellence, human body there is not harm, operability is outstanding, and the substrate that has metal film is not produced corrosion.
Above-mentioned explanation only is the detailed description to the embodiment of the invention, but the present invention is not limited to above-mentioned embodiment.Within claims and instructions and scope shown in the drawings thereof, revise, can realize different embodiments, and this modification should belong to scope of the present invention by some.
Claims (4)
1, a kind of positive light anti-etching agent remover combination is characterized in that: comprise
A) account for the organic amine of 10-50 weight %;
B) account for 0-70 weight %, with the diglycol monotertiary alkyl ether of following general formula 1 expression;
C) account for the aprotic polar solvent of 20-90 weight %;
D) based on the general assembly (TW) of described three kinds of compositions, account for 0.01-10 weight %, be selected from least a non-ionic surfactant with the represented epoxyethane block copolymer of the alcohol alkoxylates compound of following general formula 2 expressions and general formula 3,
Wherein said general formula is respectively,
[general formula 1]
HOCH
2CH
2-O-CH
2CH
2-O-R
1, R wherein
1Be that carbon number is the alkyl of 1-4;
[general formula 2]
Wherein, R is a hydrogen, or carbon number is the alkyl or phenyl of 6-12; M, n respectively are 1～10 integer, the molal quantity of representative ring oxidative ethane;
[general formula 3]
Wherein, R is a hydrogen, or carbon number is the alkyl of 6-12; M is 1～10 integer, the molal quantity of representative ring oxidative ethane.
2, a kind of positive light anti-etching agent remover combination according to claim 1 is characterized in that:
Described organic amine is at least a fatty amine that is selected from monoethanolamine, diethanolamine, triethanolamine, single Propanolamine, dipropanolamine and the tripropanol amine;
Described diglycol monotertiary alkyl ether be selected from butyl glycol, butyl diethylene glycol, butyl triethylene glycol, Propylene Glycol, methyl diethylene glycol, methyl triethylene glycol, and methyl propanediol at least a compound;
Described aprotic polar solvent is to be selected from dimethyl sulfoxide (DMSO), N-N-methyl-2-2-pyrrolidone N-, N,N-dimethylacetamide, N, dinethylformamide, N, the N-dimethyl-imidazolinone, and gamma-butyrolacton at least a compound;
Described non-ionic surfactant is at least a compound that is selected from polyoxypropylene glycol ether, polyoxypropylene ethylether, polyoxypropylene methyl ether, polyoxy third rare butyl ether, polyoxyethylene polypropylene glycol ether, poly-third ethylether of polyoxyethylene, poly-third methyl ether of polyoxyethylene, poly-third butyl ether of polyoxyethylene.
3, a kind of positive light anti-etching agent remover combination according to claim 1, it is characterized in that: the mixed solvent of described diglycol monotertiary alkyl ether and described aprotic polar solvent accounts for 40-90 weight %.
4, a kind of positive light anti-etching agent remover combination according to claim 1 is characterized in that: described positive light anti-etching agent comprises phenolics and two nitrine quinones Photoactive compounds.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610003266 CN101017333A (en) | 2006-02-06 | 2006-02-06 | Positive photosensitive resist release agent compositions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610003266 CN101017333A (en) | 2006-02-06 | 2006-02-06 | Positive photosensitive resist release agent compositions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101017333A true CN101017333A (en) | 2007-08-15 |
Family
ID=38726410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610003266 Pending CN101017333A (en) | 2006-02-06 | 2006-02-06 | Positive photosensitive resist release agent compositions |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101017333A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102227687A (en) * | 2008-12-25 | 2011-10-26 | 长瀬化成株式会社 | Photoresist remover composition, method for removing photoresist of multilayer metal circuit board, and method for producing multilayer metal circuit board |
| CN102667628A (en) * | 2009-11-16 | 2012-09-12 | 东友Fine-Chem股份有限公司 | Nonaqueous resist stripper composition |
| CN101424888B (en) * | 2007-11-01 | 2012-10-31 | 株式会社东进世美肯 | Composition for stripping photoresist, stripping method and method for manufacturing display device |
| CN103293883A (en) * | 2012-02-23 | 2013-09-11 | 奇美实业股份有限公司 | Photoresist stripping liquid composition and application thereof |
| CN103425002A (en) * | 2013-07-19 | 2013-12-04 | 杨桂望 | Resist stripping agent |
| CN103425003A (en) * | 2013-07-19 | 2013-12-04 | 杨桂望 | Resist stripping agent |
| CN107037697A (en) * | 2016-02-03 | 2017-08-11 | 李长荣化学工业股份有限公司 | Composition for removing polyimide, use thereof and method for removing polyimide by using composition |
| CN108303862A (en) * | 2017-01-11 | 2018-07-20 | 株式会社大赛璐 | resist removing composition |
| CN110361941A (en) * | 2019-07-05 | 2019-10-22 | 上海新阳半导体材料股份有限公司 | A kind of positive photoresist stripper, preparation method and application |
| CN111630117A (en) * | 2018-01-19 | 2020-09-04 | Mti株式会社 | Stripping agent for stripping protective coating agent for cutting process |
| CN112255899A (en) * | 2020-11-24 | 2021-01-22 | 合肥普庆新材料科技有限公司 | Water-based PI film stripping liquid and preparation method thereof |
-
2006
- 2006-02-06 CN CN 200610003266 patent/CN101017333A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101424888B (en) * | 2007-11-01 | 2012-10-31 | 株式会社东进世美肯 | Composition for stripping photoresist, stripping method and method for manufacturing display device |
| CN102227687A (en) * | 2008-12-25 | 2011-10-26 | 长瀬化成株式会社 | Photoresist remover composition, method for removing photoresist of multilayer metal circuit board, and method for producing multilayer metal circuit board |
| CN102667628A (en) * | 2009-11-16 | 2012-09-12 | 东友Fine-Chem股份有限公司 | Nonaqueous resist stripper composition |
| CN103293883A (en) * | 2012-02-23 | 2013-09-11 | 奇美实业股份有限公司 | Photoresist stripping liquid composition and application thereof |
| CN103425002A (en) * | 2013-07-19 | 2013-12-04 | 杨桂望 | Resist stripping agent |
| CN103425003A (en) * | 2013-07-19 | 2013-12-04 | 杨桂望 | Resist stripping agent |
| CN107037697A (en) * | 2016-02-03 | 2017-08-11 | 李长荣化学工业股份有限公司 | Composition for removing polyimide, use thereof and method for removing polyimide by using composition |
| CN108303862A (en) * | 2017-01-11 | 2018-07-20 | 株式会社大赛璐 | resist removing composition |
| CN108303862B (en) * | 2017-01-11 | 2023-08-08 | 株式会社大赛璐 | Composition for removing resist |
| CN111630117A (en) * | 2018-01-19 | 2020-09-04 | Mti株式会社 | Stripping agent for stripping protective coating agent for cutting process |
| CN110361941A (en) * | 2019-07-05 | 2019-10-22 | 上海新阳半导体材料股份有限公司 | A kind of positive photoresist stripper, preparation method and application |
| CN110361941B (en) * | 2019-07-05 | 2023-02-03 | 上海新阳半导体材料股份有限公司 | Positive photoresist stripping liquid, preparation method and application thereof |
| CN112255899A (en) * | 2020-11-24 | 2021-01-22 | 合肥普庆新材料科技有限公司 | Water-based PI film stripping liquid and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101017333A (en) | Positive photosensitive resist release agent compositions | |
| KR100286860B1 (en) | Photoresist Remover Composition | |
| CN101454872B (en) | Stripper composition for photoresist and method for stripping photoresist stripping composition using the composition | |
| CN100578368C (en) | Photoresist stripping liquid composition | |
| KR100504979B1 (en) | Non-corrosive stripping and cleaning composition | |
| KR100964801B1 (en) | Photoresist stripper composition, and exfoliation method of a photoresist using it | |
| WO2011142600A2 (en) | Photoresist stripper composition | |
| PH12016000330A1 (en) | Cleaning formulations | |
| JPH04124668A (en) | Peeling agent compound for resist | |
| CN102472984B (en) | Composition for removing resists used with copper or copper alloy | |
| TWI470380B (en) | Anti - corrosive photoresist release agent composition | |
| KR100544889B1 (en) | Photoresist stripper composition | |
| JP5279921B2 (en) | Photoresist stripper composition and photoresist stripping method using the same | |
| JP4698123B2 (en) | Resist remover composition | |
| JP2006343604A (en) | Cleaning liquid for photolithography and method of processing substrate using same | |
| CN101794087A (en) | Stripper composition for photoresist and method for using the stripper composition to strip the photoresist | |
| KR0184307B1 (en) | Photoresist detaching agent | |
| KR100324172B1 (en) | Photoresist stripping composition and photoresist stripping method using the same | |
| KR101213735B1 (en) | Composition for removing a photoresist | |
| JP4442817B2 (en) | Photoresist stripping solution | |
| TW202111448A (en) | Photoresist remover compositions | |
| KR101341746B1 (en) | Resist stripper composition and a method of stripping resist using the same | |
| US6861210B2 (en) | Resist remover composition | |
| KR100348434B1 (en) | Resist remover composition comprising HBM | |
| KR20040089429A (en) | Photoresist stripping composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |