CN103779444B - The grid line Falling-off Cause Analysis method of defective cell piece and reuse method - Google Patents
The grid line Falling-off Cause Analysis method of defective cell piece and reuse method Download PDFInfo
- Publication number
- CN103779444B CN103779444B CN201410032108.9A CN201410032108A CN103779444B CN 103779444 B CN103779444 B CN 103779444B CN 201410032108 A CN201410032108 A CN 201410032108A CN 103779444 B CN103779444 B CN 103779444B
- Authority
- CN
- China
- Prior art keywords
- cell piece
- grid line
- defective cell
- slurry
- comes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000002950 deficient Effects 0.000 title claims abstract description 118
- 238000000034 method Methods 0.000 title claims abstract description 73
- 238000004458 analytical method Methods 0.000 title claims abstract description 10
- 239000002002 slurry Substances 0.000 claims abstract description 83
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 62
- 239000010703 silicon Substances 0.000 claims abstract description 62
- 238000012360 testing method Methods 0.000 claims abstract description 48
- 230000007547 defect Effects 0.000 claims abstract description 37
- 238000005245 sintering Methods 0.000 claims abstract description 18
- 238000005554 pickling Methods 0.000 claims description 55
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 37
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 22
- 239000011259 mixed solution Substances 0.000 claims description 21
- 239000002253 acid Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 11
- 238000007639 printing Methods 0.000 claims description 11
- 230000015556 catabolic process Effects 0.000 claims description 10
- 238000011084 recovery Methods 0.000 claims description 7
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 8
- 238000010306 acid treatment Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000004064 recycling Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 208000024891 symptom Diseases 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a kind of grid line Falling-off Cause Analysis method and reuse method of defective cell piece.The method comprises the following steps: collect defective cell piece, and mark is carried out in the position come off at grid line; Remove residual slurry, form silicon slice under test; Detect the position that comes off of grid line whether existing defects, if existing defects, then will be designated as primary importance; Print the first slurry in the second place being different from primary importance, and sintering forms Sample Cell sheet; Observing samples cell piece, judges as follows according to observed result: if grid line no longer comes off, then defective cell piece is because the first slurry is printed on defective locations; If grid line comes off again, then defective cell piece is because the first slurry itself exists quality problems.Utilize method provided by the present invention, the reason that can grid line be found fast to come off, judge in time the serviceability of slurry, thus can quality problems on quick solution solar cell slice assembly line, guarantee product quality.
Description
Technical field
The present invention relates to area of solar cell, in particular to a kind of grid line Falling-off Cause Analysis method and reuse method of defective cell piece.
Background technology
The production process of photovoltaic solar cell sheet is usually carried out making herbs into wool on original silicon chip surface and is formed the exasperate structure reducing light reflection, then carry out diffusion technology and make P-N junction, after plasma etching removes edge conductive layer, the glassy layer of silicon chip surface is removed through chemical cleaning, then through PECVD coated with antireflection film, then carry out silk screen printing and make electrode, finally sintering makes slurry and silicon chip form good ohmic contact.
In manufacture of solar cells enterprise, often produce the defective cell piece that some grid lines come off, this defective cell piece is directly discarded usually or directly recycling, seldom have the concrete reason to grid line comes off to analyze.If directly discard the rising that directly can cause cost of material, cause the wasting of resources simultaneously.And directly recycling is often cured the symptoms, not the disease, the defective cell piece that grid line comes off still constantly can be produced.
Therefore, be badly in need of setting up a kind of method analyzing defective cell piece grid line falling-away cause, to find the reason that grid line comes off quickly and accurately, and then tackle the quality problems that cell piece production line occurs in time, ensure product quality.
Summary of the invention
The present invention aims to provide a kind of grid line Falling-off Cause Analysis method and reuse method of defective cell piece, can find the reason that grid line comes off quickly and accurately.
To achieve these goals, according to an aspect of the present invention, provide a kind of grid line Falling-off Cause Analysis method of defective cell piece, the method comprises the following steps: collect the defective cell piece that grid line comes off, and carry out mark in the position that grid line comes off; Remove defective cell piece remained on surface slurry, form silicon slice under test; Detect position that the grid line of silicon slice under test comes off whether existing defects, if the position existing defects that grid line comes off, then the position mark come off by grid line is primary importance; The second place being different from primary importance on the surface of silicon slice under test prints the first slurry used in defective cell piece production process, and sintering forms Sample Cell sheet; Observing samples cell piece, judges as follows according to observed result: if the grid line of Sample Cell sheet no longer comes off, then defective cell piece is because the first slurry is printed on the defective locations of silicon chip, causes the grid line of cell piece to come off; If the grid line of Sample Cell sheet comes off again, then defective cell piece is because the first slurry itself exists quality problems.
Further, the step detecting position that the grid line of silicon slice under test comes off whether existing defects comprises: the second slurry used in the position printing spec battery sheet that the grid line of silicon slice under test comes off makes, and sintering forms mesuring battary sheet; Electrical breakdown detection is carried out to the position that cell piece Central Plains to be measured grid line comes off, if the position existing defects that the grid line of mesuring battary sheet comes off, then the position that grid line comes off is designated as primary importance.
Further, remove defective cell piece remained on surface slurry, form the step adopting pickling processes in the step of silicon slice under test.
Further, in the step of pickling, the temperature of pickling is 20 ~ 30 DEG C, and the time of pickling is 3 ~ 5min; The number of times of preferred pickling is 3 ~ 5 times.
Further, in the step of pickling, the acid used for mass concentration be 10 ~ 30% hydrochloric acid and mass concentration be the mixed solution of the HF of 10 ~ 30%; Preferred mass concentration be 15% hydrochloric acid and mass concentration be the mixed solution of the hydrofluoric acid of 15%.
Further, the step also comprising washing after the step of pickling and dry, preferably washing adopts Ultrasonic Cleaning.
According to a further aspect in the invention, additionally provide a kind of reuse method of defective cell piece, the method of recycling comprises: according to above-mentioned methods analyst defective cell piece grid line falling-away cause, and be handled as follows according to defective cell piece grid line falling-away cause: when defective cell piece grid line falling-away cause is stock quality problem, then change slurry, and secondary operations is carried out in defective cell piece recovery; When the position existing defects problem that the defective cell piece grid line falling-away cause grid line that is silicon chip comes off, then the position that the grid line of defective cell piece comes off is designated as primary importance, and in the process recycled by defective cell piece, in the second place being different from primary importance, printing slurry forms grid line structure.
Further, in the step that defective cell piece is recycled, before secondary operations is carried out in defective cell piece recovery, also comprise the step removing leftover slurry on defective cell piece, the step preferably removing leftover slurry on defective cell piece comprises the step of pickling processes.
Further, the temperature of pickling in the step of pickling processes is 20 ~ 30 DEG C, and the time of pickling is 3 ~ 5min; The number of times of preferred pickling is 3 ~ 5 times; The acid used in the step of preferred pickling processes for mass concentration be 10 ~ 30% hydrochloric acid and mass concentration be the mixed solution of the HF of 10 ~ 30%; More preferably mass concentration be 15% hydrochloric acid and mass concentration be the mixed solution of the hydrofluoric acid of 15%.
Further, in the step that defective cell piece is recycled, after removing the step of leftover slurry on defective cell piece, also comprise the step adopting ultrasonic wave water washing.
Apply grid line Falling-off Cause Analysis method and the reuse method of a kind of defective cell piece of technical scheme of the present invention.By carrying out to the defective cell piece after process the simple operations step that blemish mensuration and accepted stock republish process respectively, just grid line falling-away cause can be known.By the reason that method provided by the present invention can find grid line to come off fast, and the serviceability of slurry can be judged in time, and the quality problems on quick solution solar cell slice assembly line, ensure product quality.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.The present invention is described in detail below in conjunction with embodiment.
In a kind of typical execution mode of the present invention, provide a kind of grid line Falling-off Cause Analysis method of defective cell piece, the method comprises the following steps: collect the defective cell piece that grid line comes off, and carry out mark in the position that grid line comes off; Remove defective cell piece remained on surface slurry, form silicon slice under test; Detect position that the grid line of silicon slice under test comes off whether existing defects, if the position existing defects that grid line comes off, then the position mark come off by grid line is primary importance; The second place being different from primary importance on the surface of silicon slice under test prints the first slurry used in defective cell piece production process, and sintering forms Sample Cell sheet; Observing samples cell piece, judges as follows according to observed result: if the grid line of Sample Cell sheet no longer comes off, then defective cell piece is because the first slurry is printed on the defective locations of silicon chip, causes the grid line of cell piece to come off; If the grid line of Sample Cell sheet comes off again, then defective cell piece is because the first slurry itself exists quality problems.
The grid line Falling-off Cause Analysis method of above-mentioned defective cell piece provided by the present invention, republish the simple operations step of process by carrying out the come off defect testing of position and accepted stock of grid line respectively to the defective cell piece after process, just can know grid line falling-away cause.Utilize method provided by the present invention, the reason that can grid line be found fast to come off, and the serviceability that can judge slurry in time, thus can quality problems on quick solution solar cell slice assembly line, ensure product quality.
For judging that silicon slice under test grid line comes off the step of surface of position whether existing defects in said method of the present invention, as long as can judge that the come off detection method of position whether existing defects of silicon slice under test grid line all can be used for the present invention, such as, those skilled in the art to cell tester used usual during cell piece Performance Detection as the Halm tester of German Halm company, or the LIS-R1V6 model PL(luminescence generated by light detection system of BTimaging company) and light microscope detect the method for defects of battery plate position and be all applicable to the present invention.The principle that PL detects is that the laser emitted by LASER Light Source is radiated on silicon chip surface, produces a large amount of light induced electron.If silicon chip somewhere existing defects, then light induced electron will be neutralized, and causes Defect place to send light, image will show shadow, determine the defective locations of silicon chip inside thus.
In a kind of preferred embodiment of the present invention, the step detecting position that the grid line of silicon slice under test comes off whether existing defects comprises: the second slurry used in the position printing spec battery sheet that the grid line of silicon slice under test comes off makes, and sintering forms mesuring battary sheet; Electrical breakdown detection is carried out to the position that cell piece Central Plains to be measured grid line comes off, if the position existing defects that the grid line of mesuring battary sheet comes off, then the position that grid line comes off is designated as primary importance.The position that the grid line of mesuring battary sheet comes off is breakdown by electrical breakdown step, just can determine the position existing defects that grid line comes off.In the present invention, further preferably, silicon slice under test is connected Halm tester and carry out electrical breakdown detection, form breakdown point if be presented in testing result on silicon slice under test, then the mode of testing through PL again determines the accurate location of existing defects in the position that marked grid line comes off.The position existing defects that the present invention adopts aforesaid way to come off to determine grid line, if be because grid line is just printed on the position of impure point, current turns ON when Halm tests, corresponding place will be breakdown, and grid line comes off; And if grid line is printed on and departs from the position of impure point, test grid line after making current through Halm and do not come off.This detection method can detect silicon slice under test whether existing defects easily and quickly; And PL detect can intuitively and accurately display defect exist position.
The second slurry used in such scheme refers to the slurry that can print and produce spec battery sheet, namely after going into operation or detecting, regards as up-to-standard slurry.Guaranteeing under the prerequisite that stock quality is out of question, if grid line is just printed on the position that the former grid line of silicon slice under test comes off, after sintering, front does not have obvious grid line obscission, but is carrying out performance test through Halm tester to cell piece, have obvious leaky, and parallel-current is little.And after the test of Halm tester, the position that former grid line comes off is breakdown, easy grid line of obviously observing comes off, test through PL again, the back side of the relevant position that grid line comes off has obvious impurity shape material, so not only can be easy to the position existing defects problem determining that the former grid line of silicon chip comes off, but also the accurate location of existing defects can be determined.
In such scheme, the position that the grid line determined after detecting through PL comes off is designated as primary importance, when secondary operations being carried out to defective cell piece recovery to utilize, be different from primary importance do not have other positions of defective silicon chip to carry out printing the slurry that there are not quality problems time, just can form spec battery sheet, both ensure that the quality of cell piece turn improves the qualification rate of cell piece.
Above-mentioned removal defective cell piece remained on surface slurry, the method forming any removal defective cell piece remained on surface slurry in the step of silicon slice under test all can be used for the present invention, includes but are not limited to the step adopting pickling processes.Preferably adopt the step of pickling processes in the present invention, the principle of pickling processes is that the alloy-layer of complexity slurry in sintering process and silicon dioxide, silicon nitride, silicon chip itself formed erodes, thus removes slurry.
In the above-mentioned acid pickling step of the present invention, to the number of times of the temperature of pickling, the time of pickling and pickling all without particular/special requirement, as long as slurry can be removed.In a kind of preferred embodiment of the present invention, the temperature of pickling is 20 DEG C ~ 30 DEG C, and the time of pickling is 3 ~ 5min; The number of times of preferred pickling is 3 ~ 5 times.In the present invention, the temperature of pickling is also not limited to said temperature scope, can adjust corresponding temperature according to actual needs with faster processing time, preferably adopt 20 ~ 30 DEG C in the present invention, carry out acid treatment in this temperature range, simple to operate, fail safe is high, and energy consumption is lower, cleaning performance is better.The same above-mentioned acid-treated time also suitably can adjust according to the concentration of HF, and preferred process 3 ~ 5min of the present invention, can make the effective of pickling by the time controling of pickling within 3 ~ 5min, can not cause too macrolesion again to silicon chip surface.Pickling makes for 3 ~ 5 times silicon chip surface slurry removal effect good.
In the above-mentioned acid pickling step of the present invention, particular/special requirement be there is no to used acid solution, as long as the acid solution that can realize defective cell piece residual slurry is removed all can be used for the present invention, acid solution in the present invention includes but are not limited to the mixed solution of hydrofluoric acid and hydrochloric acid, preferred mass concentration be 10 ~ 30% hydrochloric acid and mass concentration be the mixed solution of the HF of 10 ~ 30%; In above-mentioned acid treatment step, the concentration of HF and HCl mixed solution is not limited to above-mentioned scope, but preferably adopts above-mentioned scope, this is because when the mass concentration of HF and HCl in mixed solution is greater than 30%, its operational danger is larger, easily causes potential safety hazard.When mass concentration is less than 10%, the processing time is longer, and effect is undesirable.More preferably adopt in the present invention mass concentration be 15% hydrochloric acid and mass concentration be the mixed solution of the hydrofluoric acid of 15%.Mass concentration be 15% hydrochloric acid and mass concentration be that the mixed solution of the hydrofluoric acid of 15% carries out acid treatment, the better effects if that the slurry on defective cell piece surface is removed, and processing safety is also relatively high.
Through the peracid treatment silicon slice under test removed after defective cell piece remained on surface slurry, the present invention is above-mentioned can be used in follow-up whether existing defects have detected to be measured surface completely, but a small amount of remaining acid solution may be left in the silicon slice under test surface after acid treatment.In order to make silicon slice under test surface cleaner, the step also comprising washing after the step of the preferred above-mentioned pickling of the present invention and dry.Preferred washing adopts Ultrasonic Cleaning.The better effects if of Ultrasonic Cleaning cleaning, makes silicon slice under test cleaner.
In the another kind of typical execution mode of the present invention, provide a kind of reuse method of cell piece, the method comprises: utilize said method to analyze defective cell piece grid line falling-away cause, and be handled as follows according to defective cell piece grid line falling-away cause: when defective cell piece grid line falling-away cause is stock quality problem, then change slurry, and secondary operations is carried out in defective cell piece recovery; When the position existing defects problem that the defective cell piece grid line falling-away cause grid line that is silicon chip comes off, then the position that the grid line of defective cell piece comes off is designated as primary importance, and in the process recycled by defective cell piece, in the second place being different from primary importance, printing slurry forms grid line structure.
The reuse method of above-mentioned cell piece provided by the present invention, after being analyzed, according to the difference of the reason that grid line comes off, takes different processing modes to defective cell piece by the reason come off to defective cell piece grid line.The situation that the grid line caused for stock quality problem comes off, again carries out secondary operations to cell piece after carrying out changing slurry and becomes qualified cell piece.The situation that the grid line that the position existing defects come off for the former grid line of defective cell piece causes comes off, adopt when carrying out secondary operations printing slurry to cell piece in the second place being different from the primary importance that grid line comes off and print, be also produced into qualified cell piece.By reuse method provided by the present invention, the reason that grid line comes off can be found timely and accurately, solve the quality problems on cell piece production line, be convenient to the position changed slurry in time or change printing in time, ensure the quality of production of cell piece.
According to reuse method provided by the present invention, in the step that defective cell piece is recycled, before secondary operations is carried out in defective cell piece recovery, also comprise the step removing leftover slurry on defective cell piece.Removing leftover slurry on defective cell piece can make the cell piece of recycling surface more totally and not affect follow-up secondary operations.But particular/special requirement be there is no to the step of leftover slurry on the defective cell piece of above-mentioned removing, as long as leftover slurry on defective cell piece can be removed.In the present invention preferably but be not limited to the step comprising pickling processes, the alloy-layer that the step of pickling processes can make leftover slurry and silicon chip be formed when sintering is removed, thus removal leftover slurry.In a kind of preferred embodiment of the present invention, the temperature of pickling in the step of above-mentioned pickling processes is 20 DEG C ~ 30 DEG C, and the time of pickling is 3 ~ 5min; The number of times of preferred pickling is 3 ~ 5 times.In the present invention, the temperature of pickling is not limited to said temperature scope, can adjust corresponding temperature according to actual needs with faster processing time, preferably adopt 20 ~ 30 DEG C in the present invention, carry out acid treatment in this temperature range, simple to operate, fail safe is high, and energy consumption is lower, cleaning performance is better.The same above-mentioned acid-treated time also suitably can adjust according to the concentration of acid solution, preferred process 3 ~ 5min of the present invention, the time controling of pickling can be made the effective of pickling within 3 ~ 5min, the thinning silicon chip of excessive corrosion can not be caused on silicon chip again and affect secondary utilization.Pickling makes for 3 ~ 5 times silicon chip surface slurry removal effect good.
In the above-mentioned acid pickling step of the present invention, particular/special requirement be there is no to used acid solution, as long as the acid solution that can realize defective cell piece residual slurry is removed all can be used for the present invention, acid solution in the present invention includes but are not limited to the mixed solution of hydrofluoric acid and hydrochloric acid, preferred mass concentration be 10 ~ 30% hydrochloric acid and mass concentration be 10 ~ 30% HF or both mixed solutions; In mixed solution in above-mentioned acid treatment step, the concentration of HF and HCl solution is not limited to above-mentioned scope, but preferably adopts above-mentioned scope, this is because when the mass concentration of HF and HCl solution is greater than 30%, its operational danger is larger, easily causes potential safety hazard.When mass concentration is less than 10%, the processing time is longer, and effect is undesirable.More preferably adopt in the present invention mass concentration be 15% hydrochloric acid and mass concentration be the mixed solution of the hydrofluoric acid of 15%.Adopt the mixed solution of above-mentioned concentration to carry out acid treatment, the better effects if of the slurry removal on defective cell piece surface, and processing safety is also higher.
In above-mentioned reuse method provided by the present invention, in the step that defective cell piece is recycled, the step adopting ultrasonic wave water washing is also comprised after the step removing leftover slurry on defective cell piece, the step of ultrasonic wave water washing can make the silicon chip surface of secondary operations cleaner, thus the possibility producing spec battery sheet after making secondary operations is higher.
Below in conjunction with embodiment 1 ~ 3, beneficial effect of the present invention is described.
The second slurry in embodiment 1(the following example is through the up-to-standard slurry of cell piece production line inspection in 3 months.）
Collect the defective cell piece that grid line comes off, and carry out mark in the position that grid line comes off; With mass concentration be 10% HCl and mass concentration be that the mixed solution of the HF of 10% processes defective cell piece 3min at 20 DEG C of temperature, to remove defective cell piece remained on surface slurry, form silicon slice under test;
Print the second slurry in the former grid line of the silicon slice under test position that comes off, and sintering forms mesuring battary sheet; Mesuring battary sheet is after the test of Halm tester, and the LIS-R1V6 model PL luminescence generated by light detection system re-using BTimaging company detects, and after determining the position existing defects that former grid line comes off, the position that former grid line comes off is designated as primary importance;
The second place being different from primary importance on the surface of silicon slice under test prints the first slurry used in defective cell piece production process, and sintering forms Sample Cell sheet;
Observing samples cell piece, the grid line of Sample Cell sheet no longer comes off, then determine that defective cell piece is because the first slurry is printed on the blemish surface of silicon chip, causes cell piece surface grid line to come off.
Embodiment 2
Collect the defective cell piece that grid line comes off, and carry out mark in the position that grid line comes off; With mass concentration be 30% HCl and mass concentration be that the mixed solution of 30%HF processes defective cell piece 5min at 30 DEG C of temperature, to remove defective cell piece remained on surface slurry, form silicon slice under test;
Print the second slurry in the former grid line of the silicon slice under test position that comes off, and sintering forms mesuring battary sheet; Mesuring battary sheet is after the test of Halm tester, and the LIS-R1V6 model PL luminescence generated by light detection system re-using BTimaging company detects, and after determining the position existing defects that former grid line comes off, the position that former grid line comes off is designated as primary importance;
The second place being different from primary importance on the surface of silicon slice under test prints the first slurry used in defective cell piece production process, and sintering forms Sample Cell sheet;
Observe described Sample Cell sheet, Sample Cell sheet surface grid line comes off again, then determine that defective cell piece is because the first slurry itself exists quality problems.
Embodiment 3
Collect the defective cell piece that grid line comes off, and carry out mark in the position that grid line comes off; With mass concentration be 15% HF and mass concentration be 15% HCl mix acid liquor at 25 DEG C of temperature, process defective cell piece 4min, to remove defective cell piece remained on surface slurry, then with ultrasonic wave carry out washing process after, formed silicon slice under test;
Print the second slurry in the former grid line of the silicon slice under test position that comes off, and sintering forms mesuring battary sheet; Mesuring battary sheet is after the test of Halm tester, and the LIS-R1V6 model PL luminescence generated by light detection system re-using BTimaging company detects, and after determining the position existing defects that former grid line comes off, the position that former grid line comes off is designated as primary importance;
The second place being different from primary importance on the surface of silicon slice under test prints the first slurry used in defective cell piece production process, and sintering forms Sample Cell sheet;
Observe described Sample Cell sheet, Sample Cell sheet surface grid line no longer comes off, then determine that defective cell piece is because the first slurry is printed on the blemish surface of silicon chip, causes cell piece surface grid line to come off.
As can be seen from the above description, the above embodiments 1 ~ 3 of the present invention achieve following technique effect: by printing with a collection of slurry in the second place being different from the primary importance that defective cell piece grid line comes off, and then sintering forms Sample Cell sheet.And whether the grid line of cell piece comes off to judge to be stock quality existing problems per sample, or the method for the position existing defects problem that the former grid line of defective cell piece comes off, what simple electrical breakdown can be utilized to detect determine Sample Cell sheet grid line still to come off is that stock quality exists quality problems.And Sample Cell sheet grid line no longer comes off is that the former grid line of defective cell piece comes off position existing defects.Utilize method provided by the present invention, the reason that can grid line be found fast to come off, and the serviceability that can judge slurry in time, thus can quality problems on quick solution solar cell slice assembly line, ensure product quality.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (17)
1. a grid line Falling-off Cause Analysis method for defective cell piece, it is characterized in that, the method comprises the following steps:
Collect the defective cell piece that grid line comes off, and carry out mark in the position that grid line comes off;
Remove described defective cell piece remained on surface slurry, form silicon slice under test;
If the position mark that described grid line comes off the position existing defects that described grid line comes off, is then primary importance by the position that the described grid line detecting described silicon slice under test comes off whether existing defects;
Be different from the first slurry used in the described defective cell piece production process of second place printing of described primary importance on the surface of described silicon slice under test, and sintering forms Sample Cell sheet;
Observe described Sample Cell sheet, judge as follows according to observed result:
If the grid line of described Sample Cell sheet no longer comes off, then described defective cell piece is because described first slurry is printed on the defective locations of silicon chip, causes the grid line of cell piece to come off;
If the grid line of described Sample Cell sheet comes off again, then described defective cell piece is because described first slurry itself exists quality problems.
2. method according to claim 1, is characterized in that, the step of the position that the described grid line detecting described silicon slice under test comes off whether existing defects comprises:
The second slurry used in the position printing spec battery sheet that the described grid line of described silicon slice under test comes off makes, and sintering forms mesuring battary sheet;
Carrying out electrical breakdown detection to the position that grid line described in described mesuring battary sheet comes off, if the position existing defects that the described grid line of mesuring battary sheet comes off, is then described primary importance by the position mark that described grid line comes off.
3. method according to claim 1, is characterized in that, described removal defective cell piece remained on surface slurry, forms the step adopting pickling in the step of silicon slice under test.
4. method according to claim 3, is characterized in that, in the step of described pickling, the temperature of pickling is 20 ~ 30 DEG C, and the time of pickling is 3 ~ 5min.
5. method according to claim 4, is characterized in that, in the step of described pickling, the number of times of described pickling is 3 ~ 5 times.
6. method according to claim 4, is characterized in that, in the step of described pickling, the acid used for mass percentage be 10 ~ 30% hydrochloric acid and mass percentage be the mixed solution of the hydrofluoric acid of 10 ~ 30%.
7. method according to claim 6, is characterized in that, in the step of described pickling, the acid used for mass percentage be 15% hydrochloric acid and mass percentage be the mixed solution of the hydrofluoric acid of 15%.
8. method according to claim 3, is characterized in that, the step also comprising washing after the step of described pickling and dry.
9. method according to claim 8, is characterized in that, in the step of described washing and drying, washing adopts Ultrasonic Cleaning.
10. a reuse method for defective cell piece, is characterized in that, described method comprises:
Methods analyst according to any one of claim 1 to 9 defective cell piece grid line falling-away cause, and be handled as follows according to described defective cell piece grid line falling-away cause:
When described defective cell piece grid line falling-away cause is stock quality problem, then change slurry, and secondary operations is carried out in defective cell piece recovery;
When the position existing defects problem that the described defective cell piece grid line falling-away cause described grid line that is silicon chip comes off, then the position that the described grid line of defective cell piece comes off is designated as primary importance, and in the process recycled by defective cell piece, in the second place being different from primary importance, printing slurry forms grid line structure.
11. reuse method according to claim 10, it is characterized in that, in the process recycled by described defective cell piece, before secondary operations is carried out in described defective cell piece recovery, also comprise the step removing leftover slurry on described defective cell piece.
12. reuse method according to claim 11, is characterized in that, on the described defective cell piece of described removing, the step of leftover slurry comprises the step of pickling.
13. reuse method according to claim 12, is characterized in that, on the described defective cell piece of described removing leftover slurry step in, the temperature of described pickling is 20 ~ 30 DEG C, and the time of pickling is 3 ~ 5min.
14. reuse method according to claim 12, is characterized in that, on the described defective cell piece of described removing leftover slurry step in, the number of times of described pickling is 3 ~ 5 times.
15. reuse method according to claim 12 or 13, it is characterized in that, on the described defective cell piece of described removing leftover slurry step in, the acid that the step of described pickling uses for mass percentage be 10 ~ 30% hydrochloric acid and mass percentage be the mixed solution of the hydrofluoric acid of 10 ~ 30%.
16. reuse method according to claim 12 or 13, it is characterized in that, on the described defective cell piece of described removing leftover slurry step in, the acid that the step of described pickling uses for mass percentage be 15% hydrochloric acid and mass percentage be the mixed solution of the hydrofluoric acid of 15%.
17. reuse method according to claim 13, is characterized in that, in the process that described defective cell piece is recycled, on the described defective cell piece of described removing leftover slurry step after also comprise the step adopting ultrasonic wave water washing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410032108.9A CN103779444B (en) | 2014-01-23 | 2014-01-23 | The grid line Falling-off Cause Analysis method of defective cell piece and reuse method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410032108.9A CN103779444B (en) | 2014-01-23 | 2014-01-23 | The grid line Falling-off Cause Analysis method of defective cell piece and reuse method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103779444A CN103779444A (en) | 2014-05-07 |
| CN103779444B true CN103779444B (en) | 2015-12-02 |
Family
ID=50571485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410032108.9A Active CN103779444B (en) | 2014-01-23 | 2014-01-23 | The grid line Falling-off Cause Analysis method of defective cell piece and reuse method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103779444B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009122B (en) * | 2014-05-26 | 2016-05-18 | 奥特斯维能源（太仓）有限公司 | The do over again processing method of silicon chip of a kind of serigraphy |
| CN107768269B (en) * | 2017-10-30 | 2019-08-02 | 河北工业大学 | A kind of method of the dirty defects detection of polysilicon solar battery slice appearance |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1949474A (en) * | 2005-10-14 | 2007-04-18 | 激光先进技术股份公司 | Wiring correction method |
| CN102496662A (en) * | 2011-12-31 | 2012-06-13 | 保定天威英利新能源有限公司 | Treatment method for unqualified semi-finished products of solar cells |
| CN102956744A (en) * | 2011-08-29 | 2013-03-06 | 浚鑫科技股份有限公司 | Method for screen printing of solar cell pieces |
-
2014
- 2014-01-23 CN CN201410032108.9A patent/CN103779444B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1949474A (en) * | 2005-10-14 | 2007-04-18 | 激光先进技术股份公司 | Wiring correction method |
| CN102956744A (en) * | 2011-08-29 | 2013-03-06 | 浚鑫科技股份有限公司 | Method for screen printing of solar cell pieces |
| CN102496662A (en) * | 2011-12-31 | 2012-06-13 | 保定天威英利新能源有限公司 | Treatment method for unqualified semi-finished products of solar cells |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103779444A (en) | 2014-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103500459B (en) | Printed circuit board defect detecting method based on regularization parameters | |
| CN106990120B (en) | Quality detection method and detection device for solar cell | |
| Kumar et al. | Imaging and micro-structural characterization of moisture induced degradation in crystalline silicon photovoltaic modules | |
| CN104007149B (en) | A kind of device of research material corrosion electrochemical action and original position TEM method thereof | |
| CN103779444B (en) | The grid line Falling-off Cause Analysis method of defective cell piece and reuse method | |
| TWI641961B (en) | Method and system for design-based fast in-line defect diagnosis, classification and sample | |
| CN106597700A (en) | Detection method and detection equipment applied by same | |
| JP2009141056A (en) | Method and device for manufacturing solar cell module | |
| CN203011849U (en) | Silicon wafer defect detecting device | |
| CN103048297A (en) | Silicon wafer and silicon solar battery piece defect detecting method | |
| CN103278512B (en) | Device and method for online detection on structural damage of solar panel by utilizing microwaves | |
| CN202305422U (en) | Silicon wafer and silicon solar cell wafer defect detector | |
| Wohlgemuth et al. | The effect of cell thickness on module reliability | |
| CN101556898B (en) | Detection method of separation blade recovery in chip manufacturing process | |
| CN105203546A (en) | Online quality detecting method for solar cell | |
| JP7204436B2 (en) | Defect removal method and SiC epitaxial wafer manufacturing method | |
| CN205911289U (en) | Wafer lobe of a leaf device | |
| CN103489806A (en) | Method for monitoring ion damage on line | |
| JP5653370B2 (en) | Method for inspecting cracks in solar cells | |
| CN102074454A (en) | Monitoring method and system of etching process | |
| CN102130032A (en) | Online detection method of ion implantation | |
| CN108470695A (en) | A method of making black silicon solar cell | |
| CN106783652A (en) | A kind of detection method of ALD quality of forming film | |
| CN107271450A (en) | A kind of detection method of polyamide/silicon nitride film compactness | |
| CN102865841A (en) | Thickness and stability detection method of wafer edge measuring and detection tool |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |