CN205911289U - Wafer lobe of a leaf device - Google Patents
Wafer lobe of a leaf device Download PDFInfo
- Publication number
- CN205911289U CN205911289U CN201620905171.3U CN201620905171U CN205911289U CN 205911289 U CN205911289 U CN 205911289U CN 201620905171 U CN201620905171 U CN 201620905171U CN 205911289 U CN205911289 U CN 205911289U
- Authority
- CN
- China
- Prior art keywords
- wafer
- light source
- platform
- processing platform
- sliver apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 238000005520 cutting process Methods 0.000 claims abstract description 17
- 238000005286 illumination Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
The utility model provides a wafer lobe of a leaf device includes at least: the wafer, the wafer has the cutting of plural number strip and says, the processing platform, the wafer is arranged in on the processing platform, splitting machine constructs, the splitting machine structure is located the processing platform top, image acquisition mechanism, image acquisition mechanism is located the below of processing platform, its characterized in that: the lobe of a leaf device still including being used for heating the heating platform of wafer in order to eliminate the twin crystal, is located a heating platform broadside on the wafer carries out the fan that sweeps, and shift between processing platform and the heating platform the transfer mechanism of wafer. The utility model discloses an it is quick -witted with ionic wind to add the heating platform on current lobe of a leaf machine, and the wafer that has a dimorphism isabnormal that adopts that cold and hot impact will detect is in time handled to eliminate unusually, thereby further improve the lobe of a leaf yield.
Description
Technical field
This utility model belongs to field of semiconductor devices, more particularly, to a kind of wafer sliver eliminating the crystal grain such as twin crystal exception
Device.
Background technology
The production procedure of led includes extension and two processing procedures of chip, and wherein epitaxial manufacture process mainly passes through on a substrate
Different materials are deposited on formation epitaxial wafer on substrate by vapour deposition process, and chip processing procedure is then to make transparent leading on epitaxial wafer
The structures such as electric layer, electrode, and a wafer is divided into by multiple crystal grain by scribing board, sliver board, for follow-up encapsulation
Use.
It is vertical that scribing board generally adopts laser to cut formation between neighboring die on the surface of wafer or inside wafer
The wrong a plurality of Cutting Road of traversed by, then sliver board along this line of cut, wafer splitting is formed multiple independent crystal grain.And scribing
If board fails to split neighboring die and form corresponding Cutting Road, twinning will be formed, and then affect follow-up sliver
Operation.In prior art, generally twinning be whether there is by discernable by eye by staff, and eliminated by blowing method
Twin crystal, the method lead to detection efficiency and precision all relatively low it is impossible to meet modern production operation.
Content of the invention
Therefore, above-mentioned for solving the problems, such as, this utility model sets up heating platform and ion wind on existing breaking machine
Machine, to eliminate twinning, realizes automation mechanized operation, concrete technical scheme is as follows:
A kind of wafer sliver apparatus, at least include: wafer, and described wafer has plural bar Cutting Road；Processing platform, described
Wafer is placed on described processing platform；Cleaving mechanism, described cleaving mechanism is located above described processing platform；Image Acquisition machine
Structure, described image obtains the lower section that mechanism is located at described processing platform；It is characterized in that: described sliver apparatus are also included for adding
Hot wafer, to eliminate the heating platform of twin crystal, also has, positioned at described heating platform side, the wind that described wafer is purged
Machine, and shift the transfer device of described wafer between described processing platform and heating platform.
Preferably, described blower fan can be selected for ion blower.
Preferably, the top of described processing platform also has provides the first light source illuminating to described wafer, and described first
Light source is located at the side of described cleaving mechanism.
Preferably, the lower section of described processing platform also has provides the secondary light source illuminating to described wafer, and described second
Light source is located at the side that described image obtains mechanism.
Preferably, it is respectively provided with the first light source and second that wafer is provided with illumination above and below described processing platform
Light source, described first light source and secondary light source are located at the side of described cleaving mechanism and image capture mechanism respectively.
Preferably, described first light source and secondary light source are identical or different, and described first light source and secondary light source are white
Radiant；Or described first light source is white light source, described secondary light source is infrared light supply.
Preferably, described processing platform at least include two relative movements by platform, described wafer be placed in described by platform,
And described Cutting Road is corresponding to described two by the space between platform.
Preferably, described cleaving mechanism at least includes a chopper, and described chopper cleaves described wafer along described Cutting Road.
Preferably, described image obtains mechanism is charge coupled cell.
Preferably, described transfer device is mechanical hand.
This utility model passes through to set up heating platform and ion blower on existing breaking machine, will be examined using thermal shock
The abnormal wafer such as twinning that has measuring is processed in time, to eliminate exception, thus improving sliver yield further.
Brief description
Fig. 1 is the crystal circle structure schematic diagram of this utility model.
Fig. 2 is the wafer sliver apparatus part-structure schematic diagram of this utility model.
Accompanying drawing marks: 10. wafer；11: Cutting Road；20. processing platforms；30. cleaving mechanism；40. Image Acquisition machines
Structure；50. heating platforms；60. transfer devices；70. blower fans.
Specific embodiment
Referring to the drawings this utility model more particularly described below by way of example in the following passage.According to following explanation and power
Sharp claim, advantages and features of the present utility model will become apparent from.It should be noted that, accompanying drawing all in the form of very simplification and
All using non-accurately ratio, only in order to purpose that is convenient, lucidly aiding in illustrating this utility model embodiment.
Embodiment 1
Referring to accompanying drawing 1 ~ 2, a kind of wafer sliver apparatus, at least include: wafer 10, it has plural bar Cutting Road 11；Plus
Work platform 20, wafer 10 is placed on processing platform 20；Cleaving mechanism 30, cleaving mechanism 30 is located above processing platform 20；Image
Obtain mechanism 40, it is located at the lower section of processing platform 20；Sliver apparatus are also included for heating wafer 10 to eliminate adding of twin crystal
Hot platform 50, also has, positioned at heating platform 50 side, the blower fan 70 that wafer 10 is purged, and in processing platform 20 He
The transfer device 60 of wafer 10 is shifted, blower fan 70 can be selected for ion blower between heating platform 50.
Specifically, processing platform 20 at least include two relative movements by platform, wafer 10 is placed in by platform, and cuts
Road 11 corresponds to two spaces being subject between platform.Cleaving mechanism 30 at least includes a chopper, and chopper cleaves wafer along Cutting Road 11
10.The top of processing platform 20 also has the first light source 80 that wafer 10 is provided with illumination, and the first light source 80 is located at cleaving mechanism
30 side, can be arranged at the either side of cleaving mechanism 30 according to actual needs.Or, set in the lower section of processing platform 20
Put the secondary light source 90 that wafer 10 is provided with illumination, secondary light source 90 is located at the side of image capture mechanism 40, equally can root
According to being actually needed the either side being arranged at image capture mechanism 40.In the present embodiment, above and below processing platform 20
It is respectively arranged with the first light source 80 and the secondary light source 90 that wafer 10 is provided with illumination, the first light source 80 and secondary light source 90 are respectively
Side positioned at cleaving mechanism 30 and image capture mechanism 40.First light source 80 and secondary light source 90 are identical or different, the first light
Source 80 and secondary light source 90 are white light source；Or the first light source 80 is white light source, and secondary light source 90 is infrared light supply.Figure
It is charge coupled cell (English charge-coupled device, abbreviation ccd) as obtaining mechanism 40, transfer device 60 is optional
For mechanical hand.
In practical application, wafer 10 forms after laser surface cutting or stealthy cutting and hands in length and breadth this utility model
Wrong plural bar Cutting Road 11, first, the wafer 10 with Cutting Road 11 is placed on processing platform 20；Then, the first light source
80 and secondary light source 90 illuminate two surfaces of wafer 10 respectively, image capture mechanism 40 scanning wafer 10 simultaneously produces a wafer figure
According to the image gray-scale level degree in wafer image, picture, judges that wafer 10 whether there is twin crystal region, if unparalleled crystalline region domain or twin crystal
The ratio (ratio in twin crystal region=twin crystal region/non-twin crystal region) in region is less, and e.g., less than 5%, then proceed to cleave
Operation；If this ratio is more than or equal to 5%, this wafer 10 is transferred to heating platform 50 by transfer device 60, and in 30 ~ 50 DEG C
Heating 2 ~ 5min, is purged using ion blower 70 simultaneously, to eliminate twinning, eliminates the wafer 10 after twinning again by turning
Telephone-moving structure 60 is transferred on processing platform 20, and subsequent cleaving mechanism 30 cleaves wafer 10 along Cutting Road 11.
By ccd scanning wafer, this utility model judges that wafer whether there is twin crystal region or twin crystal area before sliver
The ratio in domain, if the ratio in twin crystal region is more than or equal to 5%, is eliminated double by heating platform heating and ion blower purging
Crystalline substance, carries out sliver operation afterwards again, and this kind of wafer twinning detection and the method eliminating can greatly improve wafer sliver
Yield.In addition, by heating platform and ion blower are set up on existing breaking machine, due to when carrying out sliver operation, brilliant
Circular surfaces are coated with protecting film, and when carrying out heating wafer, protecting film shrinks, and produces certain power to wafer, and then in ion
Under the Wind impact of blower fan, using thermal shock, the abnormal wafer such as twinning that has detecting is processed in time,
Abnormal to eliminate, thus improving sliver yield further.
It should be appreciated that above-mentioned specific embodiments are preferred embodiment of the present utility model, model of the present utility model
Enclose and be not limited to this embodiment, all any changes done according to this utility model, all belong within protection domain of the present utility model.
Claims (9)
1. a kind of wafer sliver apparatus, at least include: wafer, described wafer has plural bar Cutting Road；Processing platform, described crystalline substance
Circle is placed on described processing platform；Cleaving mechanism, described cleaving mechanism is located above described processing platform；Image capture mechanism,
Described image obtains the lower section that mechanism is located at described processing platform；It is characterized in that: described sliver apparatus are also included for heating
Wafer to eliminate the heating platform of twin crystal, the blower fan that described wafer purged positioned at described heating platform side, Yi Ji
The transfer device of described wafer is shifted between described processing platform and heating platform.
2. a kind of wafer sliver apparatus according to claim 1 it is characterised in that: the top of described processing platform also has
Described wafer is provided with the first light source of illumination, described first light source is located at the side of described cleaving mechanism.
3. a kind of wafer sliver apparatus according to claim 1 it is characterised in that: the lower section of described processing platform also has
Described wafer is provided with the secondary light source of illumination, described secondary light source is located at the side that described image obtains mechanism.
4. a kind of wafer sliver apparatus according to claim 1 it is characterised in that: above and below described processing platform
It is respectively provided with the first light source and the secondary light source that wafer is provided with illumination, described first light source and secondary light source are respectively positioned at described
Cleaving mechanism and the side of image capture mechanism.
5. a kind of wafer sliver apparatus according to claim 4 it is characterised in that: described first light source and secondary light source phase
With or different, described first light source and secondary light source are white light source；Or described first light source is white light source, described the
Two light sources are infrared light supply.
6. a kind of wafer sliver apparatus according to claim 1 it is characterised in that: described processing platform at least includes two
Relative movement by platform, described wafer be placed in described by platform, and described Cutting Road correspond to described two by between platform
Space.
7. a kind of wafer sliver apparatus according to claim 1 it is characterised in that: described cleaving mechanism at least includes splitting
Knife, described chopper cleaves described wafer along described Cutting Road.
8. a kind of wafer sliver apparatus according to claim 1 it is characterised in that: described image obtain mechanism be electric charge coupling
Close element.
9. a kind of wafer sliver apparatus according to claim 1 it is characterised in that: described transfer device be mechanical hand.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620905171.3U CN205911289U (en) | 2016-08-19 | 2016-08-19 | Wafer lobe of a leaf device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620905171.3U CN205911289U (en) | 2016-08-19 | 2016-08-19 | Wafer lobe of a leaf device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205911289U true CN205911289U (en) | 2017-01-25 |
Family
ID=57801594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620905171.3U Active CN205911289U (en) | 2016-08-19 | 2016-08-19 | Wafer lobe of a leaf device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205911289U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107634020A (en) * | 2017-09-27 | 2018-01-26 | 无锡奥特维科技股份有限公司 | Cell piece breaks piece system |
| CN109425315A (en) * | 2017-08-31 | 2019-03-05 | 长鑫存储技术有限公司 | The test loaded tool and test method of semiconductor structure |
-
2016
- 2016-08-19 CN CN201620905171.3U patent/CN205911289U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109425315A (en) * | 2017-08-31 | 2019-03-05 | 长鑫存储技术有限公司 | The test loaded tool and test method of semiconductor structure |
| CN107634020A (en) * | 2017-09-27 | 2018-01-26 | 无锡奥特维科技股份有限公司 | Cell piece breaks piece system |
| CN107634020B (en) * | 2017-09-27 | 2024-04-30 | 无锡奥特维科技股份有限公司 | Battery piece breaking system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103650115B (en) | Use laser and the cutting of plasma etching wafer of water-soluble die attach film | |
| CN205911289U (en) | Wafer lobe of a leaf device | |
| CN205004347U (en) | Draw and split all -in -one | |
| CN102245344A (en) | Film removal method, photoelectric conversion device manufacturing method, photoelectric conversion device, and film removal device | |
| CN103201588A (en) | Measurement system and method | |
| CN105241718A (en) | Transmission electron microscope (TEM) sample preparation method | |
| TW201101525A (en) | Method for manufacturing integrated thin-film solar cell | |
| CN104752558B (en) | Processing tank detection method and processing tank detection device for thin film solar cell | |
| CN201444141U (en) | Polycrystalline silicon crystallization quality detector | |
| CN105957835A (en) | Cutting method for chip | |
| CN115858632B (en) | Detection method and data processing method of gallium oxide wafer detection device | |
| CN102074454B (en) | Monitoring method and system of etching process | |
| CN103278512A (en) | Device and method for online detection on structural damage of solar panel by utilizing microwaves | |
| US9245810B2 (en) | Electrical and opto-electrical characterization of large-area semiconductor devices | |
| CN204144298U (en) | A kind of device eliminating crystal silicon solar energy battery printing ripple glaze | |
| CN105826255A (en) | LED wafer splitting method | |
| CN104353933A (en) | Laser scribing device for photovoltaic cells | |
| CN204195066U (en) | A kind of laser scriber of photovoltaic cell | |
| Zhang et al. | How double-glass laminated amorphous silicon solar modules break in the field: A case study | |
| CN103779444B (en) | The grid line Falling-off Cause Analysis method of defective cell piece and reuse method | |
| CN112394073B (en) | Method for rapidly and accurately measuring orientation of crystal axis of gallium oxide single crystal | |
| CN100438015C (en) | Semiconductor wafer with id mark, equipment for and method of manufacturing semiconductor device from them | |
| CN109524574B (en) | Flexible display panel test sample, manufacturing method thereof and defect analysis method | |
| CN108428641B (en) | IV and EL detection method for cutting solar cell | |
| KR20200083251A (en) | METHOD AND DEVICE FOR DIVIDING SiC SUBSTRATE |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |