CN201444141U - Polycrystalline silicon crystallization quality detector - Google Patents
Polycrystalline silicon crystallization quality detector Download PDFInfo
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- CN201444141U CN201444141U CN 200920028953 CN200920028953U CN201444141U CN 201444141 U CN201444141 U CN 201444141U CN 200920028953 CN200920028953 CN 200920028953 CN 200920028953 U CN200920028953 U CN 200920028953U CN 201444141 U CN201444141 U CN 201444141U
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Abstract
The utility model discloses a polycrystalline silicon crystallization quality detector which comprises a substrate, wherein a laser light source is arranged above the substrate at an oblique angle, a light splitter capable of forming a first light beam and a second light beam is arranged on the light path of the laser light source, a first light intensity detector is arranged on the light path of the first light beam, a second light intensity detector is arranged on a refraction light path of the second light beam on the substrate, and a calculating unit is in connection with both the first light intensity detector and the second light intensity detector. The utility model can rapidly and accurately detect the crystallization quality of polycrystalline silicon films, thereby replacing the original destructive detection method, more effectively monitoring the crystallization quality of polycrystalline silicon films and also improving the production capability.
Description
Technical field
The utility model relates to a kind of pick-up unit of semiconductive thin film, relates in particular to the polysilicon crystal quality detection device.
Background technology
Low temperature polycrystalline silicon technology is to utilize quasi-molecule laser annealing to handle to make amorphous silicon membrane change polysilicon structure into.The electronics translational speed of polycrystalline SiTFT is along with the crystallite dimension of polysilicon membrane increases and increases, and the crystallite dimension of polysilicon membrane is relevant with the laser energy density that puts on amorphous silicon membrane.Therefore, need detect the laser energy that is applied to adjust, so that obtain the crystalline quality of best polysilicon membrane to polysilicon membrane.
In order to detect the crystalline quality of polysilicon membrane, general by coming the viewing film surfaceness to be used as the crystalline quality index of polysilicon membrane with the optical microscope more than 500 to 1000 times, this mode mainly relies on people's naked eyes and judges, therefore be difficult to obtain accurate measurement result, also be not suitable for large-sized polysilicon membrane.Another kind method is to adopt scanning electron microscope to detect the crystalline quality of polysilicon membrane, but this method be destructive detection, and must expend many times and make sample and observe, and efficient is low, influences production capacity.
The utility model content
The technical problems to be solved in the utility model provides a kind of pick-up unit that can detect the polysilicon membrane crystalline quality fast, accurately, thereby replace original destructive detection mode, more effectively monitor the polysilicon membrane quality, can also improve production capacity simultaneously.
In order to solve the problems of the technologies described above, the utility model is achieved by following technical scheme:
A kind of polysilicon crystal quality detection device, comprise substrate, described substrate oblique upper is provided with LASER Light Source, the light path of described LASER Light Source is provided with the optical splitter that can form first light beam and second light beam, the light path of described first light beam is provided with first light intensity detector, described second light beam is provided with second light intensity detector in the refractive light paths of substrate, and described first light intensity detector and second light intensity detector are connected with computing unit jointly.
The optical maser wavelength of described LASER Light Source is 266nm～316nm.
The splitting ratio of described first light beam and second light beam is 30～40%: 70～60%.
Described substrate is a glass substrate.
The beneficial effects of the utility model are:
Because through the polysilicon layer beam reflected, its light intensity can reduce along with the increase of surfaceness, after forming maximum crystal grain, light intensity also can and increase along with crystallite dimension decline.On the other hand, measurement light source can or be disturbed the light intensity that influences measurement, this device to utilize light intensity ratio as the index that detects crystalline quality because of decay, claps effectively and has got rid of this problem.Therefore this device can detect the crystalline quality of polysilicon membrane fast and accurately immediately, thereby monitors the crystallization effect of polysilicon membrane effectively and improve production capacity.Utilize this device to detect simultaneously, therefore can reduce production costs to non-destructive detects.
Description of drawings
Fig. 1 is the structural representation of a kind of embodiment of the utility model.
Among the figure: LASER Light Source---1, substrate---2, optical splitter---3, the first light intensity detectors---4, the second light intensity detectors---5, computing unit---6, polysilicon layer---7.
Embodiment
Below in conjunction with drawings and Examples the utility model is described in further detail:
As shown in Figure 1, the utility model provides a kind of polysilicon crystal quality detection device, comprises substrate 2, and its surface coverage has a polysilicon layer 7, and for example, described substrate 2 is to be glass substrate.Described substrate 2 oblique uppers are provided with LASER Light Source 1, optical splitter 3 on described LASER Light Source 1 light path, and described optical splitter 3 is accepted the measuring light that LASER Light Source 1 is sent, and is divided into first light beam and second light beam.In the present embodiment, described measuring light has set wavelength, for example in 266nm arrives the scope of 316nm.Wherein, the splitting ratio of described first light beam and second light beam is 30～40%: 70～60%.Second light beam is used to shine polysilicon layer 7.
The light path of described first light beam is provided with the light intensity that first light intensity detector, 4, the first light intensity detectors 4 are used to detect first light beam; Described second light beam is provided with the light intensity that second light intensity detector, 5, the second light intensity detectors 5 are used to detect second light beam in the refractive light paths of substrate.
Described first light intensity detector 4 and second light intensity detector 5 are connected with computing unit 6 jointly, in order to calculate the light intensity ratio of first light beam and second light beam, monitor the crystalline quality of polysilicon layer 7 according to this ratio.
Although in conjunction with the accompanying drawings preferred embodiment of the present utility model is described above; but the utility model is not limited to above-mentioned embodiment; above-mentioned embodiment only is schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present utility model; not breaking away under the scope situation that the utility model aim and claim protect, can also make the conversion of a lot of form moral, these are all within protection domain of the present utility model.
Claims (4)
1. polysilicon crystal quality detection device, comprise substrate, it is characterized in that, described substrate oblique upper is provided with LASER Light Source, the light path of described LASER Light Source is provided with the optical splitter that can form first light beam and second light beam, the light path of described first light beam is provided with first light intensity detector, and described second light beam is provided with second light intensity detector in the refractive light paths of substrate, and described first light intensity detector and second light intensity detector are connected with computing unit jointly.
2. a kind of polysilicon crystal quality detection device according to claim 1 is characterized in that the optical maser wavelength of described LASER Light Source is 266nm～316nm.
3. a kind of polysilicon crystal quality detection device according to claim 1 is characterized in that the splitting ratio of described first light beam and second light beam is 30～40%: 70～60%.
4. a kind of polysilicon crystal quality detection device according to claim 1 is characterized in that described substrate is a glass substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920028953 CN201444141U (en) | 2009-07-06 | 2009-07-06 | Polycrystalline silicon crystallization quality detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920028953 CN201444141U (en) | 2009-07-06 | 2009-07-06 | Polycrystalline silicon crystallization quality detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201444141U true CN201444141U (en) | 2010-04-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN 200920028953 Expired - Fee Related CN201444141U (en) | 2009-07-06 | 2009-07-06 | Polycrystalline silicon crystallization quality detector |
Country Status (1)
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| CN (1) | CN201444141U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102818788A (en) * | 2012-07-26 | 2012-12-12 | 中国科学院上海光学精密机械研究所 | Device and method for detecting residual reflection of neodymium glass wrapping |
| CN103477207A (en) * | 2011-04-04 | 2013-12-25 | 信越化学工业株式会社 | Method for measuring carbon concentration in polycrystalline silicon |
| CN106057701A (en) * | 2016-08-08 | 2016-10-26 | 武汉华星光电技术有限公司 | Polycrystalline silicon grain size measurement apparatus and polycrystalline silicon grain size measurement method |
| CN104641224B (en) * | 2012-08-02 | 2018-08-31 | 国家科学研究中心 | Method for the crystal structure for analyzing polycrystalline semiconductor material |
| CN109374571A (en) * | 2018-12-07 | 2019-02-22 | 中国科学技术大学 | A kind of optical detection integrated system |
-
2009
- 2009-07-06 CN CN 200920028953 patent/CN201444141U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103477207A (en) * | 2011-04-04 | 2013-12-25 | 信越化学工业株式会社 | Method for measuring carbon concentration in polycrystalline silicon |
| US8963070B2 (en) | 2011-04-04 | 2015-02-24 | Shin-Etsu Chemical Co., Ltd. | Method for measuring carbon concentration in polycrystalline silicon |
| CN102818788A (en) * | 2012-07-26 | 2012-12-12 | 中国科学院上海光学精密机械研究所 | Device and method for detecting residual reflection of neodymium glass wrapping |
| CN104641224B (en) * | 2012-08-02 | 2018-08-31 | 国家科学研究中心 | Method for the crystal structure for analyzing polycrystalline semiconductor material |
| CN106057701A (en) * | 2016-08-08 | 2016-10-26 | 武汉华星光电技术有限公司 | Polycrystalline silicon grain size measurement apparatus and polycrystalline silicon grain size measurement method |
| CN106057701B (en) * | 2016-08-08 | 2019-02-19 | 武汉华星光电技术有限公司 | The dimension measurement method of polysilicon grain size measuring device and polysilicon grain |
| CN109374571A (en) * | 2018-12-07 | 2019-02-22 | 中国科学技术大学 | A kind of optical detection integrated system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100428 Termination date: 20100706 |