TW200415266A - Device for adding material, device for pulling up ingot, and method for producing ingot - Google Patents
Device for adding material, device for pulling up ingot, and method for producing ingot Download PDFInfo
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- TW200415266A TW200415266A TW93102361A TW93102361A TW200415266A TW 200415266 A TW200415266 A TW 200415266A TW 93102361 A TW93102361 A TW 93102361A TW 93102361 A TW93102361 A TW 93102361A TW 200415266 A TW200415266 A TW 200415266A
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- funnel
- shaft
- aforementioned
- bottom cover
- quartz
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- 239000000463 material Substances 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000013078 crystal Substances 0.000 claims abstract description 100
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000010453 quartz Substances 0.000 claims description 54
- 239000002994 raw material Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 22
- 239000004575 stone Substances 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 10
- 238000002844 melting Methods 0.000 claims description 10
- 239000000725 suspension Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000002834 transmittance Methods 0.000 claims description 6
- 238000010586 diagram Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 239000006059 cover glass Substances 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 230000000153 supplemental effect Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000010703 silicon Substances 0.000 description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000000155 melt Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 206010011469 Crying Diseases 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- 241000519695 Ilex integra Species 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000796 flavoring agent Substances 0.000 description 1
- 235000019634 flavors Nutrition 0.000 description 1
- 210000004744 fore-foot Anatomy 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010454 slate Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
200415266 五、發明說明(1) 【發明所屬之技術領域】 本發明係關於一種藉由捷可拉斯基法(CZ法)所造成之 晶塊拉引裝置,特別是關於一種追加及投入原料矽之 料裝置。 【先前技術】 使用成為用以製作半導體元件之基板之鏡面晶圓係藉 由將單結晶晶塊切割成為薄板構件,研削·研磨其表背面 4而得到。讜單結晶晶塊係可以藉由例如捷可拉斯基法等 而進行製造。圖1 0係使用捷可拉斯基法之一般之單曰曰 , 卞、、、口日日日日 塊拉引裝置11 0之縱剖面圖。以下,使用圖丨〇而就藉由單 結晶晶塊拉引裝置11 〇所造成之單結晶晶塊之製造方法, 來簡單地進行說明。 / 單結晶晶塊拉引裝置11 〇之内部係藉由真空或氬氣等 之惰性氣體而充滿,正如圖l〇(a)所示,預先在石英坩堝 120内,投入多結晶矽之塊狀燈材5〇。接著’藉由設置在 石英坩堝120周圍之加熱器24而加熱石英坩堝12〇。於是, 正如圖io(b)所示,藉由加熱器24之熱而熔融石英坩堝12〇 内之多結晶矽之燈材50,成為原料熔融液38。接著, 結晶矽之種結晶42吊掛於晶種軸16之狀態下,下降於箭號 =向,浸潰於原料炫融液38。接著,隨著拉引晶種轴心 在種結晶42之下面,成長單結晶,正如圖1〇(〇所示,可 以得到圓柱形狀之單結晶晶塊1。 接者,將成長之單結晶晶塊1取出至爐外。向來,然200415266 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a crystal block pulling device caused by the Jeclasky method (CZ method), and particularly to an additional and input silicon material Feeding device. [Prior Art] A mirror wafer used as a substrate for manufacturing a semiconductor element is obtained by cutting a single crystal ingot into a thin plate member, and grinding and polishing the front and back surfaces 4 thereof. The osmium single crystal ingot can be produced by, for example, the Jeclasky method. Fig. 10 is a longitudinal cross-sectional view of a general block drawing device 110 that uses the Joklaski method, namely, 卞, 、, 日, 日, 、, 日, 日, 日, and 日. Hereinafter, a method for manufacturing a single crystal ingot by the single crystal ingot pulling device 11 will be briefly described using FIG. / The inside of the single crystal block pulling device 11 〇 is filled with an inert gas such as vacuum or argon. As shown in FIG. 10 (a), a block of polycrystalline silicon is put in a quartz crucible 120 in advance. Lighting material 50. Next, the quartz crucible 120 is heated by a heater 24 provided around the quartz crucible 120. Then, as shown in FIG. 10 (b), the lamp material 50 of polycrystalline silicon in the quartz crucible 12 is fused by the heat of the heater 24, and becomes the raw material melt 38. Next, in a state where the seed crystal 42 of crystalline silicon is hung on the seed shaft 16, it descends in the arrow direction, and is immersed in the raw material melt 38. Next, as the seed crystal axis is pulled below the seed crystal 42 to grow a single crystal, as shown in FIG. 10 (), a cylindrical single crystal block 1 can be obtained. Then, the grown single crystal crystal Block 1 is taken out of the furnace.
200415266 五、發明說明(2) 後,必須停止藉由加熱器所造成之加埶,200415266 V. Description of the invention (2), the increase caused by the heater must be stopped,
拉引裝置110之内部,進行新的石英坩坰冷卻單結晶晶塊 之再投入。通常,在石英坩堝120中仍::,料多結晶矽 3 8之狀態下而冷卻至矽熔點以下時,由、、召原料熔融液 膨脹而損壞石英坩堝1 20,因此,僅可融液凝固時之 12〇而製造i條單結晶晶塊,使得成本辦由1個石英掛堝 在結束1個單結晶晶塊之製造製程後/不^、因此,提議: 石f坩堝120中之原料熔融液38之凝固,;:破置’防止 個单結晶晶塊製造用之原料多結晶石夕之再。守’ &行下-晶矽,再度拉弓丨單結晶晶塊的單'结晶晶塊^ ^古炫融多結 作為使用在該原料多結晶矽之再投入法。 列舉例如日本特開昭57 — 9589 1號公報。此外加料裝置係 類似構造者係列舉例如日本特開平6一88’彳乍為具有 摻雜裝置。 b 5就公報所示之 使用作為這些追加料裝置或摻雜 漏斗係考慮雜質對於單結晶之雜質污染之=书之中吊式 選擇石英來作為材料,並且,使用透明者熱性, 内部之狀況,來進行製作。 犯夠確認漏斗Inside the pulling device 110, a new quartz crucible-cooled single crystal ingot is re-injected. Generally, in the quartz crucible 120: When the polycrystalline silicon 38 is cooled below the melting point of the silicon, the quartz crucible 1 20 is damaged by the expansion of the raw material molten liquid, so only the molten liquid can be solidified. At that time, i single crystal ingots are manufactured, so that the cost is reduced by 1 quartz hanging pot after the completion of the manufacturing process of the single crystal ingots. Therefore, it is proposed that the raw materials in the stone crucible 120 be melted. The solidification of the liquid 38 ;; breaks down to prevent the polycrystalline stone that is the raw material for the manufacture of a single crystal block. Shou '& line down-crystalline silicon, once again bow 丨 single crystalline monolithic crystalline ingots ^ ^ dazzling multi-junction as a re-input method of polycrystalline silicon used in this raw material. For example, Japanese Unexamined Patent Publication No. 57-9589 1 is cited. In addition, the feeding device is similar to the builder series, for example, Japanese Unexamined Patent Publication No. 6-88 ', which has a doping device. b 5 uses the supplementary device or doping funnel as shown in the bulletin to consider the impurity contamination of single crystal impurities = quartz is selected as the material in the book, and the transparent one is used for thermal properties and internal conditions, To make. Make enough confirmation funnel
【發明内容】 【發明所欲解決的課題】 但是’在圖u所示之底蓋136,在使 :式:斗"。來填充燈材5〇而追加及投)月 下’透明石英係容易透過熱,因此,隨著保7於之=[Summary of the Invention] [Problems to be Solved by the Invention] However, the bottom cover 136 shown in FIG. To fill the lamp material 50 and add and cast) The next transparent glass is easy to transmit heat, so with the guarantee of 7 =
200415266 五、發明說明(3) 間變長而由於來自炼融液3 8之輻射熱,來使得漏斗1 3 0之 内部’成為高溫。因此,固合燈材50間或燈材50和石英, 會有所謂燈材5 〇不容易落下之問題產生。 此外,曰本特開昭57 — 9589 1號公報所示之追加料裝 置係形狀複雜,使用鉬、不銹鋼等之耐熱材料,在這些金 屬材料成為熔融液,馬上就進行使用,因此,可能會污染 =炼^液。此外,在藉由金屬零件而製作鉸鏈等時,不可 月b在Θ述氣氛來進行潤滑,因此,燒結或滑動部之消耗係 成為問題。 至曰$外’燈狀半導體原料及漏斗本身重量之合計係加入 其ΐ旦^ ΐ底蓋之接合部。裝填於筒體之原料燈材係使得 接部ΐ支Ξ Ϊ ί體,因Λ,藉由底蓋和筒體之前端部之抵 又得幾乎所有之重量。 負荷之重旦,體係石英玻璃製,底盍係鉬板製,因此,在 之破損可二,大之狀態下,筒體和石英玻璃間之接觸部 |王係變大。 此外,日士 也考慮這個成&特開平6 — 88865號公報所示之摻雜裝置係 追加料,但,為大型化而裝填燈狀半導體原料,來使用於 英製底蓋和^强在上吊這個之狀態下,全部重量係成為石 上邊周邊部^軸之接合部,接著,施加至石英製底蓋之 該部Si?管下端。 增大之狀態下,央?璃間之接觸’因&,在負荷之重量呈 玻璃製底i,田破損之可能性變大。此外,為了吊接石英 此,使用鎢線等,但是,在錐形管填充燈200415266 V. Description of the invention (3) The interval becomes longer and the inside of the funnel 1 3 0 becomes high temperature due to the radiant heat from the melting solution 38. Therefore, there is a problem that the lamp material 50 is not easily dropped when the lamp materials 50 are fixed or the lamp material 50 and the quartz are fixed. In addition, the feed device shown in Japanese Patent Laid-Open No. 57-9589 1 has a complicated shape, and uses heat-resistant materials such as molybdenum and stainless steel. These metal materials become molten liquids and are used immediately. Therefore, they may be contaminated. = Refining liquid. In addition, when a hinge or the like is made of metal parts, lubricating cannot be performed in an atmosphere of Θ as described above. Therefore, the consumption of the sintered or sliding parts becomes a problem. The total weight of the light-emitting semiconductor material and the funnel itself is added to the joint of the bottom cover. The raw lamp materials filled in the tube body make the joint part ΐ support Ξ ί 体 body, because of Λ, the weight of the bottom cover and the front end of the tube body is almost all. Under heavy load, the system is made of quartz glass, and the bottom is made of molybdenum plate. Therefore, in the state of large damage, the contact between the cylinder and the quartz glass | the king becomes larger. In addition, Japan also considers the doping device shown in this Japanese Patent Publication No. 6-88865 as an additional material. However, it is filled with a lamp-shaped semiconductor raw material for large-scale use, and it is used for the British bottom cover and the substrate. In the state of being suspended, the entire weight becomes the joint portion of the peripheral part of the upper side of the stone, and then it is applied to the lower end of the Si? Tube of the quartz bottom cover. In the state of increasing, central? The contact between the glasses is caused by & the weight of the load is made of glass bottom i, and the possibility of damage to the field becomes greater. In addition, in order to suspend the quartz, tungsten wires are used, but the lamp is filled in a conical tube.
第8頁 200415266Page 8 200415266
材日守,接觸到燈材而成為金屬污染之原因。此外,由於鎢 線和燈材間之摩擦而將錐形管掛止於環圈板後,即使是連 續降下拉引軸,也不打開底蓋。 本申請案之發明係用以解決前述問題點,成為該第i 目的係提j 一種能夠將減低燈材之溫度上升、燈材熔融及 貼附於底蓋上或者是由於熱膨脹而形成橋接及不落下予以 防止的追加料裝置。 此外,本申請案之發明 以對於晶塊之大型化、加料 而裝填大重量之燈狀半導體 底蓋的追加料裝置。 此外,本申請案之發明 部不使用金屬材料並且燈材 料裝置。 之苐2目的係提供一種能夠用 里之福大和追加料重量之增大 原料來使得筒體重量不施加於 之第3目的係提供一種在高溫 和金屬材料不直接接觸的追加 的係提供一種動作簡 料裝置。 此外’本申請案之發明之第4目 單而不具有金屬間之滑動部的追加 【用以解決課題的手段】 為了達成前述目的,因此,本申笋 ^ 加料裝置係具有··概略筒狀之漏斗本7 = f丨、發明之追 之下端開口部予以開關之底蓋以及將前二:述漏斗本體 軸,其特徵在於:具有設置在前述軸用L &盍予以下吊之 本體的制動器。 用以掛止前述漏斗 此外,本It is the cause of metal pollution when it comes into contact with lighting materials. In addition, after the tapered tube is hung on the ring plate due to the friction between the tungsten wire and the lamp, the bottom cover will not be opened even if the guide shaft is lowered continuously. The invention of this application is to solve the foregoing problems, and the i-th objective is to provide a method that can reduce the temperature of the lamp, increase the melting of the lamp, attach the lamp to the bottom cover, or form a bridge due to thermal expansion. Refilling device to prevent falling. In addition, the invention of the present application is a refilling device for loading a large-sized lamp-shaped semiconductor bottom cover for increasing the size and loading of a crystal block. In addition, the invention section of this application does not use a metal material and a lamp material device. The second objective is to provide an additional system that can increase the weight of the raw material and the weight of the additional material so that the weight of the cylinder is not applied. The third objective is to provide an additional system that does not directly contact the metal material at high temperatures. Simple material device. In addition, the fourth item of the invention of the present application is added without a sliding part between the metals. [Means to solve the problem] In order to achieve the aforementioned purpose, the present application ^ The feeding device has a roughly cylindrical shape. The funnel book 7 = f 丨, the bottom cover for opening and closing the bottom opening of the invention and the first two: the funnel body shaft, which is characterized in that it has a body provided on the shaft and suspended by L & 盍. Brake. To suspend the aforementioned funnel. In addition, this
才斗裳置係具有:栖 7054-6132.PF(N2);Ahddub.ptdThe Caidoushang family line has: habitat 7054-6132.PF (N2); Ahddub.ptd
200415266 五、發明說明(5) 略筒狀之漏斗本體、將前述 關之底蓋以及將前述底下知開口部予以開 前述底蓋之材質,使用 ’其特徵在於:在 此外,本申,4^包含氣泡之石英玻璃。 略筒狀之漏斗本‘弟3發明之追加料裝置係具有:概 4、將珂述漏斗太贈之τ A山日日 關之底蓋以及將前述以 知開口部予以開 前述底蓋之材質,=7予以下吊之軸’其特徵在於:在 此外,本申請Ϊ:、:外線透過率40%〜60%之石英。 略筒狀之漏斗本體:f4發明之追加料裴置係具有··概 關之底蓋以及將;述;】J漏斗本體之下端開口部予以開 前述漏斗本體内,=2以下吊之轴’其特徵在於:在 管。 /、有復盍前述軸之概略圓筒形狀之石英 此外,本申請案之第5發明之 略筒狀之漏斗本體、將俞、+、逆刀竹展置係具有:概 關之底蓋以及將前述底蓋;;^ 2下端開口部予以開 前述漏斗本體,具有旋轉吊之轴’其特徵在於:在 此外,本申請案之第6發明°之追 英玻璃之概略筒狀之漏斗本衣置係具有··石 口部予以開關之錐體之底蓋:將前:底〔=:本體之下端開 之既定位置之^制動哭體二將漏斗本體掛止㈣禍上方 具有:覆蓋上端開口部之頂拓特^徵在於:前述漏斗本體係 用之貫通孔,前述轴係具有板;;於前述頂板之軸插通 定於前述吊棒之中程而掛止4 :周節長度之吊棒、用以固 別述漏斗本體之第2制動器、200415266 V. Description of the invention (5) The material of the slightly funnel body, the bottom cover that closes the above, and the bottom cover that opens the bottom opening, is characterized by using 'characterized in that: In addition, in this application, 4 ^ Quartz glass containing air bubbles. The funnel device of the invention of the slightly cylindrical funnel Ben's 3 has the following: 4. The bottom cover of τ A mountain sun-closed which is a gift from Keshu Funnel, and the material of the bottom cover opened by the aforementioned opening. , = 7 The shaft to be suspended is characterized in that: In addition, in this application, Ϊ :,: Quartz with an outer line transmittance of 40% to 60%. Slightly cylindrical funnel body: The supplementary material of the f4 invention has a bottom cover and a cover; the description;] J The opening of the lower end of the funnel body is to open the funnel body, = 2 below the shaft ' It is characterized by: in the tube. /. Quartz with a roughly cylindrical shape that resembles the aforementioned shaft. In addition, the slightly cylindrical funnel body, the Yu, +, and the counter-bamboo display of the fifth invention of the present application include: The bottom cover is opened; ^ 2 The opening at the lower end is opened the funnel body, and has a rotating hanging shaft. It is characterized in that, in addition, the sixth invention of the present application is a cylindrical cylindrical funnel coat of the invention. The bottom cover of the cone with the opening and closing of the mouth of the stone: the front: the bottom [=: the bottom of the body opened at a predetermined position ^ brake crying body 2 hanging the funnel body on the upper side of it has: covering the upper opening The characteristics of the top extension are: the through hole used in the aforementioned funnel system, the shaft system has a plate; the shaft of the top plate is inserted through the middle of the suspension rod and is suspended 4: the length of the suspension rod The second brake to fix the funnel body,
五、發明說明(6) ______ 和觔述底蓋呈一體地成形之石英 棒和前述石英玻璃棒之連結器。、埂場棒、以及連結前逑吊 此外,本申請案之第7發 斗本體、袖和底蓋,其特徵在於之t加料裝置係具有:漏 概略圓筒形狀之石英玻璃之髀·則述漏斗本體係具有: 板、穿設於前述頂板之轴插通、f M前述筒體上部之項 ”卜圍之第⑽動器;前 貝通孔、卩及設置在前 足於W述吊棒之中程而掛止 ’、/、有·吊棒、用以固 ::述底蓋呈一體地成形之石;:=體,制動器、 則迷石英破螭棒之連結器、、ϋ棒、連結前述吊棒和 玻璃棒和前述連結器是:珂述吊棒和前述石英 係由包含氣泡之高略51同形狀之石英管;前述底* 此外,本申請案;ϋ英破璃所構成。 现 —項所記载之追加料㈣第1至第7發明任何 圓錐形狀,在底面具有又空氣^特徵在於:前述底蓋係中空 此外’本申請案 〇; 收納晶塊之原料熔融 ^明之晶塊拉引裝置係具有: 熱器、收納前述堆瑪和加力:熱前述原料炫融液之加 塊原料之追加料襄 ,、、、°。之至、以及用以追加前述曰 有概略筒狀之漏;本體U 5在於:前述追加料裴置係= 以開關之底蓋、述漏斗本體之下端開予 之材質,使用包4::=::下吊之軸;在前述底1 此外,本申浐:,石央玻璃。 收納晶塊之原料熔^=第丨〇發明之晶塊拉引裝置係具有: 阳液之石英坩堝、圍繞前述石英坩堝之V. Description of the invention (6) ______ The connector of the quartz rod and the aforementioned quartz glass rod formed integrally with the bottom cover of the rib. In addition, the 7th round body, sleeve, and bottom cover of the present application are characterized in that the feeding device is: a glass cylinder with a generally cylindrical shape leaking. Description The funnel system has: a plate, a shaft penetrating through the aforementioned top plate, an item “f M” of the upper part of the aforementioned cylinder, a front actuator, a front shell through hole, a shaft, and a hanging rod arranged on the forefoot. Intermediate and hanging ', /, there is a hanging rod, used to solidify :: the bottom cover is integrally formed with the stone ;: = body, brake, the connector of the quartz broken rod, the rod, the connection The aforementioned hanging rod and glass rod and the aforementioned connector are: The Keshu hanging rod and the aforementioned quartz are composed of a quartz tube with a height of approximately 51 and the same shape containing bubbles; the aforementioned bottom * In addition, this application; The supplementary material described in the item-any of the conical shapes of the 1st to 7th inventions has air on the bottom surface ^ characterized by: the aforementioned bottom cover is hollow in addition to 'this application 〇; the raw material for storing crystal blocks is melted ^ crystal blocks The pulling device is provided with: a heater, containing the aforementioned piler and afterburner: heating the aforementioned material The addition of the raw material of the melt is used to add the raw material, ... ,, °, to, and to add the aforementioned cylindrical leakage; the main body U 5 is that the aforementioned additional material is placed on the bottom cover of the switch, The material of the bottom end of the funnel body is described, using the package 4 :: = :: hanging shaft; in the above bottom 1 In addition, this application is: Shiyang glass. The raw material storing the crystal block is melted ^ = 丨 〇 invention The crystal block pulling device has:
7054-6132-PF(N2);Ahddub.pld7054-6132-PF (N2); Ahddub.pld
第11頁Page 11
ZUUH-1 JZOO 五、發明說明(?) 石墨掛禍、圍έΑ ^ 杜夕a &則述石墨坩堝之加埶哭 " 副室::在室之上部透過問閥所設置::广納前述各個構 面而可關閉之副室i、設置;。、設置於前述 述晶種轴之漏斗動::進:支持:晶種輪、以及下吊4 體、轴和底蓋;前:;特在於:前述漏斗係具有漏斗本 英玻螭之筒體、^漏斗本體係具有:概略圓筒形狀之石 板之轴插通用之;;前述隱部之;1板、穿設於前述頂 夠將前述漏斗本俨^孔、以及a又置在耵述筒體之外圍而沪 具有:可長以掛止於前述間之第1制動器;前述圍轴而: 掛止前述漏以jr奉、…定於前述吊棒之中二 开乂之7; » 體之弟2制動為、和前述麻莒 概略圓筒形::;:;和;;二玻璃棒和前述連結ί: 性之石英破璃所構成。,| a - 1係由包含氣泡之高斷熱 古d二外’本申請案之第11發明之晶塊梦造方、" 有收納晶塊之原料炫融液之掛禍、加係使用具 _A;:收納則述坩堝和加熱器之室、摔由名‘ t /夜之 融液來浸潰及拉引種結晶之至 2 =迷原料炫: 拉引裝置以及用以追加前述塊i之;晶塊之 ::供應塊狀之多…,藉由加 藉由前述拉引裝置而在前述片料2 = 1原2炫融液,在 曰曰 牡引迷原枓熔融液來浸潰前述種結ZUUH-1 JZOO V. Description of the invention (?) Graphite scourge, encirclement A ^ Du Xi a & the description of the graphite crucible plus weeping " Vice room :: It is set in the upper part of the room through the interrogation valve :: Guangna The auxiliary chamber i, which can be closed in each of the aforementioned aspects, is provided; The funnel movement set on the aforementioned seed shaft :: advance: support: seed wheel, and hanging 4 body, shaft and bottom cover; front :; especially: the aforementioned funnel is a cylinder with a funnel, a glass and a glass cylinder The funnel system has: the general cylindrical shaft of slate is generally used for shaft insertion; the aforementioned hidden part; 1 plate, which is arranged on the top and is sufficient to place the aforementioned funnel main hole and a in the description tube The outer periphery of the body has the following: the first brake that can be hung in the aforementioned space; the aforementioned hoop shaft: the hung suspension in jr Feng, ... determined in 7 of the two openings in the hanging rod; » Brother 2 brakes, and the foregoing mochi is roughly cylindrical :: ;;; and ;; The two glass rods and the foregoing connection are made of: Quartz broken glass. , | A-1 is composed of high-thermal-insulation ancient d 2 containing air bubbles. 'Cream dream making method of the 11th invention of the present application, " There is a scourge, plus use of the raw material dazzling melt solution containing the crystal block. _A ;: Room containing the crucible and heater, impregnated by the name 't / night's melt and pull seed crystals to 2 = raw material dazzle: pull device and used to add the aforementioned block i: crystal block :: supply as many blocks as possible, by adding the above-mentioned drawing device through the above-mentioned drawing material 2 = 1 original 2 xuan melt solution, said that the original solution is immersed Break the aforementioned knot
7054-6132-PF(N2);Ahddub.ptd 第〗2頁 200415266 五、發明說明(8) 之至少一部分前,藉由前述漏斗而在前述坩渦内 狀之多結晶石夕。 【實施方式】 以下,使用圖1至圖8,就本發明之實施形態而進行說 明。但是,以下係不過是本發明之某一實施形態,可以根 據當别業者之技術常識而適當地進行變更,本發明之技術 思想係並非限定在這些具體例。 在此,圖1係使用本發明之實施形態之捷可拉斯基法 之石夕單結晶拉引裝置丨〇之縱剖面圖,圖2 (a)係圖1之A _ a 剖面之矽單結晶拉引裝置1 0之橫剖面圖,圖2 (b)係圖1 T \剖面之^夕單結晶拉引裝置1 0之橫剖面圖,圖3係追加料 製程之石夕單結晶拉引裝置1〇之縱剖面圖’圖4係在追加钮 製程而投人燈材50中之石夕單、结晶拉引裝置^ 力枓 圖5係在追加料製程而拉引變空之漏斗3Gd ’ :丨二1〇之縱剖面圖,圖6係在單結晶晶::二= 晶種軸1 6下吊種結晶42之狀能 拉引衣祆而在 塊!之狀態下之,夕單結晶拉引裝置1〇:=弓』早、:晶晶 熔融投入至石英坩堝2。之燈材前°:圖8:在 裝置10之縱剖面圖。 卜之矽早結晶拉弓丨 首先’就矽單結晶拉引裝置J 0 行說明,然後,w %^正體構造而間單地進 仏- 士— 就各個衣置而砰細地進行說明。正如m 不,本貫施形態之矽單結晶拉引回 衣罝1 υ係主要由圍繞石7054-6132-PF (N2); Ahddub.ptd Page 2 200415266 V. At least part of the description of the invention (8), through the aforementioned funnel, the polycrystalline stone in the crucible will be formed. [Embodiment] Hereinafter, an embodiment of the present invention will be described using Figs. 1 to 8. However, the following is merely an embodiment of the present invention, and may be appropriately changed in accordance with the technical common sense of a person skilled in the art. The technical idea of the present invention is not limited to these specific examples. Here, FIG. 1 is a longitudinal cross-sectional view of the Shixi single crystal pulling device using the Jecolaski method according to the embodiment of the present invention, and FIG. 2 (a) is a silicon sheet in section A _a of FIG. 1. A cross-sectional view of the crystal pulling device 10, FIG. 2 (b) is a cross-sectional view of the single crystal pulling device 10 in the T \ section of FIG. 1, and FIG. 3 is a Shixi single crystal drawing of an additional material process Longitudinal section view of device 10 'Figure 4 is a Shi Xidan, crystal pulling device that is put into the lamp 50 in the additional button process ^ Li 枓 Figure 5 is an empty funnel 3Gd in the additional material process : 丨 Sectional view of the two 10, Figure 6 is a single crystal: 2: Two = seed axis 16 hanging the seed crystal 42 can pull the clothes in the state of the block! The pulling device 10: = bow is early, and the crystal is melted and put into the quartz crucible 2. The front angle of the lamp: Figure 8: A longitudinal sectional view of the device 10. Bu Zhisi's early crystal pulling bow 丨 First, the silicon single crystal pulling device J 0 will be explained. Then, w% ^ is a normal body structure and is introduced in a single step.-Taxi — Detailed description of each clothing. Just as m is not, the silicon single crystal of the original form is pulled back. Yi 1 υ is mainly composed of surrounding stones.
7054-6132-PF(N2);Ahddub.ptd 第13頁 200415266 五、發明說明(9) 英掛禍20和石墨掛禍22和加熱器24之室12、μ ^ =置在之原料炫融液所拉引之單結晶晶塊之 杰=種結晶或漏斗3〇之晶種軸16而構成。 百先,就室1 2而進行說明。不Α㈤, 一 =之室12係在使得旋轉軸由其底部中央所開不始而有朝底:垂\ i2«之狀態下=置可自由上下動作之支持軸28。在支持 ! ,土端碗狀石墨掛禍22,在石墨掛禍22之内 , Λ央掛禍20。由於成為石英掛禍2〇和石墨掛 =?九為了防止直接接合在原料溶融… Τ對於硬之以,因此,最好是石英_2Q之緣故。另一 ?:降”於高溫,同時,具有所謂變脆且容易破 才貝之性貝,因此,藉由石墨掛禍22而圍繞其周圍。 24而圍係圍繞於加熱器24,藉由該加熱器 二…20内之多結晶石夕之燈材5〇。在加 熱為24之周圍,配置呈同心圓狀於室12之圓筒开 。斷熱材26係防止來自加熱器“之熱直接地輕射於‘室 收η〜,Γ ; %王u〜工部,還過閘閥18而連結7054-6132-PF (N2); Ahddub.ptd Page 13 200415266 V. Description of the invention (9) British hanging disaster 20 and graphite hanging disaster 22 and heater 24, room 12, μ ^ = placed raw materials The pull of the single crystal block is composed of seed crystals or the seed shaft 16 of the funnel 30. Baixian will explain the room 12. No Α㈤ , 一 = The chamber 12 is in a state where the rotating shaft does not start from the center of its bottom and faces downward: vertical \ i2 «= a support shaft 28 that can move up and down freely. In support of this, earth-end bowl-shaped graphite hangs on 22, and within graphite hang-on 22, Λ 阳 hangs on 20. Because it becomes quartz hanging 20 and graphite hanging = 九 In order to prevent direct bonding in the melting of raw materials ... T is hard, so it is best to use quartz_2Q. Another ?: lowered to high temperature, at the same time, it has the so-called brittle and easy to break the shellfish. Therefore, the graphite hangs around the surrounding 22. 24, and the surrounding is around the heater 24, by this Heater 2 ... The lamp material of polycrystalline stone in the 20 is 50. Around the heating is 24, the cylinder is arranged in a concentric circle in the chamber 12. The thermal insulation material 26 is to prevent the direct heat from the heater. Ground light shot at 'room close η ~, Γ;% 王 u ~ 工部, also connected through the gate valve 18
ΐ 4。所謂室12和副室14係能夠藉由言 ,18而進行連通或遮斷。另—方面,並無進行圖示] 疋’田室14之上端係藉由頂板而進行封鎖。正如圖2。 不’在副室14之前面’具備可開關之副室蓋4〇,可以姜 丁開该副室盍40而進行拉引之單結晶 ⑽對於晶種軸16之安裝。此外,正如圖二:取=ΐ 4. The so-called chamber 12 and the sub-chamber 14 can be connected or interrupted by means of 18. On the other hand, it is not shown in the figure.] The upper end of the field chamber 14 is blocked by the top plate. As shown in Figure 2. Instead of the auxiliary chamber cover 40 provided on the front surface of the auxiliary chamber 14, the auxiliary chamber 盍 40 can be opened and pulled to form a single crystal. The seed crystal shaft 16 can be mounted. In addition, as shown in Figure 2: Take =
200415266 五、發明說明(ίο) 之内周圍面,設置朝向用以掛止後面敘述之制動器6 4之中 心而突出之凸緣狀閘4 4。 在田j至14之上部,設置並無圖不之晶種轴拉引裝置。 晶種軸拉引裝置係可自由上下動作地保持晶種軸丨6,晶種 轴1 6係通過頂板而沿著副室丨4之中心軸,來進行下吊。在 晶種軸1 6之下端,於單結晶晶塊拉引製程之際,下吊種結 晶’在追加料製程之際,下吊漏斗3 〇。 。 接著,在追加料時,使用圖i,就掛止於曰 漏斗3 0之構造而進行說明。本實施形熊 ' = 漏斗本體32、軸34和&蓋36所構成。心〃斗係主要由 正如圖1所漏斗本體32係成 小直徑概略圓筒形狀之上部筒體5 2 下申如地連接 之下部筒體54之形狀。在上部筒_ = '略圓筒形狀 56。另一方面,在下部筒體54之上端,’设置凸緣 下部筒體54係用以防止對於矽之&緣58。 二製。此外,可以藉由利用透明 :ς成因A ’成為石 來確認裝填於漏斗3〇 曰功而構成下部筒體54, 下。 …曰矽之燈材5。是否全部落 在凸緣56之周邊部下端,藉由 狀且剖面二字型連結器6〇。連結器心〒定概略圓筒形 之2個構件所構成,夾住及固定凸嚎糸由为割於周圍方向 :面,設置4個螺絲孔,在該螺絲孔,固,連結器60之 制動器64。該制動器⑷系 口广4條之sus製之 正如圖1及图9, 、β - %間44。 圖2(a)所不,在凸緣56, _ U弋2條之旋轉制 7〇54-6l32-PF(N2);Ahddub. ptd 第15頁 200415266 五、發明說明(11) 動為62鍵形之旋轉制動器62係根本部固定於凸緣56。另 二方面:在旋轉制動器62之前端部,可旋轉地設置由聚四 氟乙烯等之氟系樹脂所構成之滾筒⑽a。滾筒6 2 a係以水平 旋轉轴來作為中心而能夠進行旋轉。因此,漏斗30係在滾 筒62a抵接於副室14内壁面之狀態下,可以滑動地進行上 下動作。 θk樣’藉由設置旋轉制動器62及滾筒62a,而即使 疋在吊掛漏斗3 〇之狀態來裝填燈材5 〇,也不會疏忽地旋轉 漏斗3 0此外,在投下燈材5 0時,也不會疏忽地旋轉漏斗 =’因此’可以防止由於振動等而接觸及破損爐内品和 一在像這樣所構成之漏斗本體32之内部,正如圖1所 不,插,,34。軸34係主要由制動器7〇、吊棒72、連結器 。石央& 78和呈一體地成形於底蓋36之石英玻璃76所構 =於s曰種軸16。在上部筒體52之頂板66,穿設用以插 =之貫通孔68,吊棒72係通過貫通孔68而插通 =之内部。在吊棒72之中程,固合圓筒形狀::屬属= =器=制動器7〇之外徑係更加大於貫通孔68之:, 因此,糟由制動器70而掛止漏斗本體32。 仏 可以藉由成為這樣構造,藉由制動 ,全部"。此外,吊棒72係構本 郎’在制動器7〇而掛止漏斗本想32時,消餘底蓋部 第16頁 7〇54-6132-PF(N2);Ahddub.ptd 200415266 五、發明說明(12) 筒體54間之間隙, 量不施加於底蓋36 透過連結器74 璃棒7 6之上端。接 狀之石央管78而覆 由该石央管78而覆 材50之金屬污染。 另一方面,正 成形於底蓋36,底 蓋3 6係成為圓錐形 之内徑。底蓋36係 英玻璃所構成,底 如圖2(b)所示,穿 得室1 2或副室1 4之 於相同。 此外,在本實 底蓋36,但是,可 璃之構件,例如可 率更低40%〜7〇%之 英玻璃等之其他素 性,同時,能夠反 防止燈材5 0之溫度 之空洞部内壁之一 時,底蓋3 6係最好 同時,調節長户 之周邊部。X而使得漏斗本體32之重 而使得該吊棒7 2 ^ τ 著,配置上部& 1端,連結於石英玻 蓋金屬製之吊Ά、直徑之概略圓筒形 蓋金屬部 >,防止2:石英玻璃棒76。藉 止對於成為原料矽之燈 如前面敘述,石试 蓋36係位處於石璃棒76係呈-體地 狀,底面之直秤传璃棒76之下端。底 由藉著包含氣ΐ ^ 大於下部筒體54 # Q β ζ包而使得斷轨性變高之石 盍36之内部係成為Λ泊I『生,间之石 設4個空氣孔8〇。‘、、' ?5。在底盍36 ’正 内部和底蓋36内Λ由該空氣孔80而使 < Α洞部之氣壓,保持 施形態,由包含5 以是紅外線透心之石英玻璃而構成 以使用比起透明加低於透明石英玻 非透明石英等 央還使得紅外線透過 材而構成:此外此夕卜,可以由附色之石 射來自圖3所示之卜可以具有良好之耐熱 上升’將鉬穿之策融液38之輻射熱, 部分。但是^在^板,貼合在底蓋36内 是由包含氣泡之ΐ慮、對於原料石夕之污染 巧斷熱性之石英玻璃所200415266 Fifth, the inner peripheral surface of the invention description (ίο) is provided with a flange-shaped brake 4 4 which projects toward the center of the brake 6 4 to be described later. In the upper part of Tian j to 14, a seed shaft pulling device without a figure is provided. The seed shaft pulling device can hold the seed shaft 丨 6 freely up and down, and the seed shaft 16 is suspended by the top plate along the central axis of the auxiliary chamber 丨 4. At the lower end of the seed shaft 16 during the single crystal ingot drawing process, the seed crystal is suspended for the additional material process, and the funnel 30 is lowered. . Next, when adding materials, the structure of the funnel 30 will be described with reference to Fig. I. This embodiment is formed by a funnel body 32, a shaft 34, and an & cover 36. The heart bucket system is mainly formed by the funnel body 32 as shown in Fig. 1 into a small diameter and roughly cylindrical shape. The upper cylindrical body 5 2 is connected to the lower cylindrical body 54 as shown below. In the upper cylinder _ = 'Slightly cylindrical shape 56. On the other hand, a flange is provided at the upper end of the lower cylinder 54 to prevent the & Two systems. In addition, it is possible to confirm the filling in the funnel 30 to form the lower cylinder body 54 by using the transparent: Generation factor A ′ as a stone. … Say silicon light 5. Whether or not all of them fall on the lower end of the peripheral portion of the flange 56 are connected by a shape-shaped and cross-shaped connector 60. The connector core is composed of two members of a roughly cylindrical shape. The clamping and fixing protrusions are cut in the surrounding direction: a surface, and 4 screw holes are provided. The screw holes are fixed to the brake of the connector 60. 64. The brake system is made by the susceptor of 4 wide mouths. As shown in Fig. 1 and Fig. 9, β-% 44. Figure 2 (a), the flange 56, _ U 弋 2 of the rotating system 7054-6l32-PF (N2); Ahddub. Ptd page 15 200415266 5. Description of the invention (11) The 62 key The shaped rotary brake 62 is fixed to the flange 56 at the fundamental portion. On the other hand, a roller ⑽a made of a fluororesin such as polytetrafluoroethylene is rotatably provided at the front end of the rotary brake 62. The drum 6 2 a is rotatable around a horizontal rotation axis. Therefore, the funnel 30 can slide up and down while the roller 62a is in contact with the inner wall surface of the sub chamber 14. The θk-like pattern is provided with the rotary brake 62 and the drum 62a, and even if the lamp material 5 is filled while the funnel 3 is hung, the funnel 3 is not inadvertently rotated. In addition, when the lamp material 50 is dropped, It will not inadvertently rotate the funnel = 'so' can prevent contact and damage to the furnace product and the inside of the funnel body 32 constituted like this, as shown in Fig. 1, insert, 34. The shaft 34 is mainly composed of a brake 70, a suspension rod 72, and a coupler. Shi Yang & 78 is composed of a quartz glass 76 integrally formed on the bottom cover 36 = the seed shaft 16. A penetrating hole 68 is inserted through the top plate 66 of the upper cylinder 52, and the suspension rod 72 is inserted through the penetrating hole 68. In the middle of the suspension rod 72, the shape of the fixed cylinder is: genus = = device = brake 70. The outer diameter is larger than that of the through hole 68 :. Therefore, the funnel body 32 is stopped by the brake 70.仏 can be constructed in this way, by braking, all ". In addition, the suspension rod 72 is the main structure of the main body, when the brake is 70, and the funnel is originally 32, the bottom cover is removed. Page 16 054-6132-PF (N2); Ahddub.ptd 200415266 V. Description of the invention (12) The amount of clearance between the cylinders 54 is not applied to the bottom cover 36 through the upper end of the connector 74 glass rod 7 6. The contiguous stone central tube 78 is covered with metal contaminated by the stone central tube 78 and covered with the material 50. On the other hand, it is formed on the bottom cover 36, and the bottom cover 36 has a conical inner diameter. The bottom cover 36 is made of English glass. As shown in FIG. 2 (b), the bottom cover 12 and the sub-room 14 are the same. In addition, in the actual bottom cover 36, however, other components of the glass that can be lowered, such as British glass, which can be 40% to 70% lower, can also prevent the inner wall of the hollow portion of the lamp at 50 ° C. At the same time, it is best to adjust the peripheral part of Nagato at the same time. X makes the funnel body 32 so heavy that the hanging rod 7 2 ^ τ is arranged, and the upper part & 1 end is arranged, which is connected to a quartz glass cover metal hanging cymbal, the diameter of the cylindrical cover metal part > to prevent 2: Quartz glass rod 76. As for the lamp that becomes the raw material silicon, as described above, the stone test cover 36 is located at the bottom of the glass rod 76, and the bottom of the glass rod 76 is straight. At the bottom, the inner part of the stone ΐ36, which has a high orbit-breaking property, is included by the inclusion of air ΐ ^ larger than the lower tube 54 # Q β ζ package, and the internal system of 盍 36 is set to 4 air holes 80. ‘,,’? 5. Inside the bottom 而 36 ′ and inside the bottom cover 36, the air hole 80 keeps the air pressure of the Α cavity and keeps the shape. It is made of quartz glass containing 5 so that it is infrared penetrating. It is more transparent than using. Adding lower than transparent quartz, glass, non-transparent quartz, etc. also makes infrared transmission material: In addition, it can be shot by colored stones from the cloth shown in Figure 3 can have a good heat resistance rise Radiated heat of melt 38, part. However, the ^ plate attached to the bottom cover 36 is made of quartz glass, which contains air bubbles, and contaminates the raw material.
7〇54-6132-PF(N2);Ahddub.ptd $ 17頁 200415266 五、發明說明(13) 構成。 在本發明之矽皁結晶拉引裝置1〇,漏斗本體32、軸34 和燈材50係位處於底蓋36之上部,由下方開始來照曬來自 融液38之輻射熱。此外,非透明石英之紅外線透過率係 權〜60%,比起透明石英之9〇%還格外地變低。因此,可 m來自?融液38之輻射熱所造成之燈材之溫度 枓之r u藉由習知之矽單結晶拉引裝置時,於追加 而形成橋接’無法落下,作是, ^ 晶拉引裝置1〇的話,則妒:;^如果错由本發明之石夕單結 善燈材5G之掛上頻率1夠抑制燈材5G之加熱,格外地改 '“二卜J正如圖4所示,藉由利用熱膨脹而使得裝填於 :斗3。内部之燈材50來形 二仟衣上於 這樣,不下降石英管78,g 底盍36不-起下降。像 由石英玻她而下吊底以:降^細’也成為藉 無接觸到金屬部。 冓以因此’燈材50係並 接著,使用圖1及圖3或m 7而4 τ丄义 之矽單結晶拉弓丨裝置10之動^就如刚面敘述所構成 昔止 各门 勒作,來進行說明。 自无’在表初,石夕單纟士 18而關閉副室蓋4〇之狀態。日日拉引$置10係成為打開閘閥 ?著’在藉由惰性氣體而取代室12 後,在仍然流動惰性氣體之 4之内部 藉由對於加埶界24來進行,“下保持於低壓。然後, ―2“進仃加熱而嫁融預先投入至石英掛蜗〇54-6132-PF (N2); Ahddub.ptd $ 17 200415266 5. Description of the invention (13) Composition. In the silicon soap crystal pulling device 10 of the present invention, the funnel body 32, the shaft 34, and the lamp material 50 are positioned above the bottom cover 36, and the radiant heat from the melt 38 is irradiated from the bottom. In addition, the infrared transmittance of non-transparent quartz is ~ 60%, which is extremely lower than 90% of transparent quartz. So can m come from? The temperature of the lamp material caused by the radiant heat of the melt 38. When the conventional silicon single crystal pulling device is used, a bridge is formed when it is added, and it cannot be dropped. As a result, if the crystal pulling device 10 is used, it is jealous. : ^ If the frequency 1 of Shixi Danjieshan Lighting Material 5G of the present invention is mistaken, it is enough to suppress the heating of the lighting material 5G, and it is particularly changed to "" 二 卜 J as shown in Figure 4, by using thermal expansion to make the filling Yu: Bucket 3. The inner light material 50 is shaped like this, and the quartz tube 78 is not lowered, and the bottom 36 is not lowered. It is suspended from the bottom like quartz glass: It becomes no contact with the metal part. Therefore, 'light material 50 series and then, using Figure 1 and Figure 3 or m 7 and 4 τ 丄 silicon single crystal pull bow 丨 the movement of the device 10 ^ as described above The composition of the past has been explained by everyone. Since there was no 'at the beginning of the watch, Shi Xidan 纟 士 18 and the state of the auxiliary chamber cover 40 closed. Every day pulls $ 10 to become an open gate valve?' After replacing the chamber 12 with an inert gas, the inside of 4 where the inert gas is still flowing is performed by the At low pressure. Then, ―2 ″ is heated and the mating is put into the quartz hanging snail in advance.
-6132-PF(N2);Ahddub.ptd 苐18頁 200415266 五、發明說明(14) 20内部之多結晶矽之燈材5〇, 梂益 战為原料熔融液38。 接者,關閉閘閥1 8,遮斷宮]9 ^ , L. 至1 2和副室1 4。藉此而使得 至1 2内保持在惰性氣氛而防止 更付 下,使得副室u内,回復至常炫融液38之氧化之狀態 η岡“ - Μ °然後,打開副室蓋40, 正如圖6所不,在晶種軸丨6之下 .H ^ ^ , j味,下吊種結晶4 2。 在日日種軸1 6之下端而下书種έ士曰 0Η 0Β ^ 滿副室Η之内部。接著,二VP, 氣氛,來充 Η。在該狀態下,種:晶4 ::,18而連通室12和副室 ^ L 裡、、、口日日係位處於熔融液38之正上方, 因此,猎由熔融液38之輻射熱而進行預埶。 接著’驅動晶種軸16之拉引裝置,將下吊於晶種轴Η :鈿之種結晶42予以下$,將種結晶仏之至少一部分,考 =融液38。在種結晶42浸潰於原料熔融液38時, 曰Ϊ下方’逐漸地成長單結晶石夕。可以藉由隨著 既定速度’來拉引種結晶42,以便於拉 引八有所要求之直徑及長度之單結晶晶塊j。 然後’上升成長之單結晶晶塊1至副室丨4為止。正 圖7所示,在單結晶晶塊1完全上升至副室丨4為止後,關 閘„ ’遮斷室i 2和副室i 4。藉此而使得室i 2内保持 性氣氛,在防止原料熔融液38之氧化之狀態下, 二 14内回復到常壓。然i,打開副室蓋40,#出單結曰曰:=-6132-PF (N2); Ahddub.ptd 苐 Page 18 200415266 V. Description of the invention (14) 20 The polycrystalline silicon lamp 50 inside the lamp, which is used as the raw material melt 38. Then, close the gate valve 18, cut off the palace] 9 ^, L. to 12 and the auxiliary room 14. This keeps the inert atmosphere within 12 to prevent further payment, so that the auxiliary chamber u returns to the state of oxidation of Chang Hyun melt 38 η Gang "-Μ °. Then, open the auxiliary chamber cover 40, as Figure 6 shows, below the seed axis 丨 6. H ^ ^, j flavor, hanging seed crystal 4 2. Under the Japanese seed axis 16 under the book seed έ 士 曰 0Η 0Β ^ Full vice room The interior of Η. Next, the two VPs, the atmosphere, fill the Η. In this state, the seed: crystal 4 ::, 18, and the connecting chamber 12 and the auxiliary chamber ^ L, 口, 口, Japanese, and Japanese are in the melt 38. It is directly above, so hunting is performed by the radiant heat of the melt 38. Then, the driving device of the seeding shaft 16 is driven to hang down on the seeding shaft 结晶: the seed crystal 42 of 钿, and the seed At least a part of the crystal osmium, test = melt 38. When the seed crystal 42 is immersed in the raw material melt 38, the monocrystalline stone is gradually grown below the cymbal. The seed crystal can be pulled by following the predetermined speed. 42 to facilitate the drawing of the single crystal ingot j with the required diameter and length. Then, the single crystal ingot 1 ascending to the subchamber 1 to 4. As shown in Fig. 7, after the single crystal ingot 1 completely rises to the sub-chamber 丨 4, the shutters "i" and "sub-chamber i 4" are closed. As a result, the atmosphere in the chamber i 2 is maintained, and the oxidation of the raw material melt 38 is prevented, and the atmosphere in the chamber 14 is returned to normal pressure. Then, open the auxiliary chamber cover 40, # 出 单 结 说: =
1。藉由以上而結束單結晶晶塊之製造製程。 曰A 接著,就追加料製程而進行說明。在將成為 結晶矽之燈材50裝填於漏斗3〇後,打開副室蓋4〇,將漏:1. With the above, the manufacturing process of the single crystal ingot is completed. A Next, the additional material process will be described. After the lamp 50, which becomes crystalline silicon, is filled in the funnel 30, the auxiliary chamber cover 40 is opened, and the leak is:
200415266 五、發明說明(15) 3 0下吊至晶種軸1 6。在該狀態下,漏斗本體3 2係藉由制動 器7 0而進行掛止,但是,在底蓋3 6和漏斗本體3 2間,並無 間隙。 接著,關閉副室蓋40,密閉副室14。然後,減壓副室 1 4,藉由惰性氣氛而充滿副室1 4之内部。接著,打開間闊 1 8,連通室1 2和副室1 4。在該狀態下,藉由下降晶種軸i 6 而和晶種軸1 6 —起下降下吊於晶種軸1 6之漏斗3 〇。 在下降漏斗3 0時’正如圖3所示,制動器6 4係抵接於 閘44。在由該狀態開始而還下降晶種軸16時,200415266 V. Description of the invention (15) 30 was suspended to the seed axis 16. In this state, the funnel body 32 is suspended by the brake 70, but there is no gap between the bottom cover 36 and the funnel body 32. Next, the sub-chamber cover 40 is closed to seal the sub-chamber 14. Then, the auxiliary chamber 14 is depressurized, and the inside of the auxiliary chamber 14 is filled with an inert atmosphere. Next, the space 18 is opened, and the communication room 12 and the sub-room 14 are opened. In this state, the funnel 3 is suspended from the seed shaft 16 by being lowered together with the seed shaft 16 by lowering the seed shaft i 6. When the funnel 30 is lowered, as shown in FIG. 3, the brake 64 is in contact with the brake 44. As shown in FIG. When the seed shaft 16 is lowered from this state,
蓋36。於是,可以在漏斗本體32和底蓋36間,形成間隙 82,由該間隙82開始,使得多結晶矽之燈材5〇,由於本 重量而落下至石英坩堝20内。 在裝 入至石英 一起上升 所示之狀 體32。在 3 6、漏斗 在漏 遮斷室12 下,在防 40,使得 以上而結 填於漏 坩堝2 0 轴3 4和 態時, 由該狀 本體32 斗30完 和副室 止原料 副室1 4 束追加 内後’上升晶種軸16 底蓋36。在軸34上升 藉由制動器70接觸到 悲開始而還上升晶種 和晶種軸1 6係成為一 全地上升至副室14為 1 4。藉此而使得室^ 2 炫融液38之氧化之狀 内回復到常壓。然後 料製程。 ^ 結晶秒 。於是 一定距 頂板6 6 軸1 6時 體而一 止後, 内,保 態下, ,取出 之燈材50來投 ,和晶種軸1 6 離而成為圖5 而掛止漏斗本 ’軸3 4、底蓋 起上升。 關閉閘閥1 8, 持在惰性氣氛 打開副室蓋 漏斗30。藉由Cover 36. Then, a gap 82 can be formed between the funnel body 32 and the bottom cover 36. Starting from this gap 82, the lamp material 50 of polycrystalline silicon falls into the quartz crucible 20 due to its weight. The shape 32 shown in the figure is raised when it is mounted on the quartz. At 36, the funnel is under the leakage blocking chamber 12, and at 40, so that the above is filled in the crucible 20, the shaft 34, and the state, the body 32 is completed, the bucket 30 is completed, and the auxiliary chamber is stopped by the auxiliary chamber 1 4 beams added inside after 'rise seed shaft 16 bottom cover 36'. Ascending on the shaft 34, the seed crystal and the seed shaft 16 are raised as the brake 70 comes into contact with the tragedy, and the seeding shaft 16 is raised to the auxiliary chamber 14 as a whole. Thereby, the oxidized state of the chamber melt solution 38 is returned to normal pressure. Then prepare the process. ^ Crystallization seconds. Therefore, after a certain distance from the top plate 6 6 axis 1 6 hours, in the internal and maintaining state, the lamp 50 taken out to cast, and the seed axis 1 6 away from the seed shaft 1 6 to become Figure 5 and hung the funnel this' axis 3 4. The bottom cover rises. Close the gate valve 18 and open the auxiliary chamber cover funnel 30 in an inert atmosphere. By
200415266 五、發明說明(16) 料制::藉複地進行前述單結晶晶塊拉引製程和追加 枓衣辁而不父換石英坩堝20,來連 …此在本實施形態,使得底蓋36之 也可以使得底蓋36、其内部不成為空洞而成為圓錐 开,肿此外’在本貫施形態、,使得漏斗本體32成為概略圓芮 (狀益因此’底蓋36成為圓錐形狀,但是,底蓋36之= 鬥亚:限疋在Η錐形狀,如果能夠密封漏斗本體Μ之下 3;:: =則可以成為任何一種形狀。例如在漏斗本體 角錐為長方體形狀之狀態下,底蓋36之形狀係可以成為四 θ此外,在本實施形態,個別地構成閘閥1 8和閘44,作 疋,也可以呈一體地構成閘閥丨8和閘4 4。 一 此外,在本實施形態,為了拉引單結晶晶塊後之追力σ 料,因此’使用正式追加料裝置。但是,正式追加;= ^用途係並非限定在追加料,也可以使用在大量追加料置 在此,所謂大量加料係以藉由在丨次單結晶晶塊拉 :^可旎地拉引單結晶晶塊來達到原價減低,作為目的; 夕、曰在熔融仞期加料之多結晶矽之燈材5 〇後,還追加投 夕結晶矽之燈材50,在石英坩堝2〇 融液38。 八里 1原#熔 也就是說’作為素材係使用圖1所示之多結晶矽之燈 材5 〇,因此,在熔解後,埋入各個燈材5 0間之間隙部8 4, 第21頁 7〇54-6132-PF(N2);Ahddub.ptd 200415266 五、發明說明(17) 正如圖8所示’降低熔融液3 8之液面位準。因此,可以在 炼解後’藉由正式追加料裝置而追加投入多結晶矽。 /圖9係將多結晶矽之燈材50來追加投入至石英坩堝20 後之圖。可以藉由追加投入燈材5 〇而正如圖9所示,升高 炫融液38之液面位準,在石英坩堝2〇内,加料大量之原料 石夕。可以藉此而拉引更長之單結晶晶塊,能夠達到原價之 減低。 此外’關於晶塊之材質及大小,在實施本發明時,並 無任何限制,當然,現在所製造之直徑及長度之矽、200415266 V. Description of the invention (16) Material system: The above-mentioned single crystal ingot drawing process and the addition of clothes are carried out without changing the quartz crucible 20. Here, in this embodiment, the bottom cover 36 It can also make the bottom cover 36, the inside of which is not hollow, but conical, and swollen. In addition, in the present embodiment, the funnel body 32 is made roughly round. (Yiyi therefore, the bottom cover 36 has a conical shape, but, The bottom cover 36 = Douya: limited to the shape of the cone, if it can seal the funnel body M 3; :: = can be any shape. For example, in the state of the funnel body pyramid shape, the bottom cover 36 In addition, in the present embodiment, the gate valve 18 and the gate 44 are individually formed, and the gate valve 8 and the gate 44 can also be formed integrally. In addition, in this embodiment, in order to After the single crystal ingot is pulled, the σ feedstock is used. Therefore, a formal refilling device is used. However, the formal refilling is used. = ^ The application is not limited to the replenishment. It can also be used for a large number of refills. Tied to The single crystal ingot is pulled in the following order: ^ The single crystal ingot can be pulled to achieve the original price reduction for the purpose; evening and after the lamp of polycrystalline silicon is added in the melting stage, the additional investment is 50%. The crystalline silicon lamp 50 is melted 38 in a quartz crucible. The original #melt means that the polycrystalline silicon lamp 50 shown in FIG. 1 is used as the material system. Therefore, after melting, The gap part 8 between 50 and 50 of each lamp material is embedded, p. 21 7054-6132-PF (N2); Ahddub.ptd 200415266 V. Description of the invention (17) As shown in Fig. 8 'Lower the melt 3 8 Therefore, after the refining, the polycrystalline silicon can be added to the quartz crucible 20 by adding the polycrystalline silicon lamp 50 to the quartz crucible 20 by a formal charging device. You can increase the liquid level of Hyun Melt Solution 38 by adding additional lighting materials 50 as shown in Figure 9. In the quartz crucible 20, you can add a large amount of raw material stone Xi. You can use this to pull longer orders The crystal block can reduce the original price. In addition, regarding the material and size of the crystal block, when the present invention is implemented, Any limitation, of course, now being fabricated diameter and length of the silicon,
GaAs、GaP、InP等之單結晶晶塊係即使是對於將來可能製 造之非常大之直徑及長度之晶塊,也可以適用本發明。 ^ 像這樣,本發明係並非限定於前述實施形態,關於底 盖之形狀或材質、其他構造,可以在發明要旨之範圍内, 加入各種之應用、變化。 [實施資料] 就使用習知之漏斗而進行追加料之狀態以及使用本發 明之漏斗而進行追加料之狀態間之效果而言,使用表1而 在以下,具體地進行說明。 【表1】 石英種類 加熱器功率(kw) 熔融液_h待機時間(sec) 燈材掛上率(別 透明 110 120 20 115 110 40 115 120 50 120 100 80 非透明 115 120 0 Ϊ20 100 5Single crystal ingots such as GaAs, GaP, InP, etc. are applicable to the present invention even for crystal ingots of very large diameters and lengths that may be manufactured in the future. ^ As described above, the present invention is not limited to the aforementioned embodiments. As for the shape, material, and other structures of the bottom cover, various applications and changes can be added within the scope of the gist of the invention. [Implementation materials] The effects between the state of performing additional feeding using the conventional funnel and the state of performing additional feeding using the funnel of the present invention will be specifically described below using Table 1. [Table 1] Quartz type Heater power (kw) Melt_h standby time (sec) Hanging rate of lamp (not transparent 110 120 20 115 110 40 115 120 50 120 100 80 non-transparent 115 120 0 Ϊ20 100 5
7054.6132-PF(N2);Ahddub.ptd 第22頁 200415266 五、發明說明(18) 表1係顯示··在使用漏斗而追加料燈材時,燈材熔融 及貼附於底蓋上,或者是由於熱膨脹而形成橋接,不落下 之比例。 正如表1所示,在使用藉由非透明石英來構成底蓋之 本發明之漏斗之狀態下,比起使用藉由透明石英來構成底 蓋之習知之漏斗之狀態,還格外地改善在追加料時之燈材 掛上率。在此’所謂燈材掛上率係指發生相對於全部追加 料次數之燈材掛上之抵量數之比例。7054.6132-PF (N2); Ahddub.ptd Page 22 200415266 V. Description of the invention (18) Table 1 shows that when using a funnel to add additional lighting materials, the lighting materials are melted and attached to the bottom cover, or The proportion of bridging that does not fall due to thermal expansion. As shown in Table 1, the state of using the funnel of the present invention in which the bottom cover is made of non-transparent quartz is significantly improved compared with the state of using the conventional funnel in which the bottom cover is made of transparent quartz. Hanging rate of lighting materials when materials are expected. Here, the so-called “lamp hanging rate” refers to the ratio of the amount of offsets that occur with respect to the total number of times the lamp is hung.
接著’一起記載能夠由本發明之前述實施形態所把握 之申請專利範圍以外之技術思想及其效果。 在具有軸、漏斗本體和底蓋之漏斗,藉由紅外線透過 率更加低於透明石英之物質而構成底蓋。像這樣,可以藉 由利用低紅外線透過率之物質而構成底蓋,以便於抑制由 於來自炼融液之輻射熱所造成之燈材之溫度上升,抑制燈 材熔融及貼附於底蓋上或者是由於熱膨脹來形成橋接及不 落下。 在具有軸、漏斗本體和底蓋之漏斗,藉由固定於軸 之制動為而掛止漏斗本體。像這樣,可以藉由利用制動 =掛止漏斗本體,以便於使得漏斗本體之重量不負荷於Next, "technology ideas and effects outside the scope of patent application which can be grasped by the aforementioned embodiment of the present invention are described together. In the funnel having the shaft, the funnel body, and the bottom cover, the bottom cover is made of a substance whose infrared transmittance is lower than that of transparent quartz. In this way, the bottom cover can be formed by using a substance with a low infrared transmittance in order to suppress the temperature rise of the lamp material caused by the radiant heat from the melting solution, and to suppress the melting and attachment of the lamp material to the bottom cover or Forms bridging and does not fall due to thermal expansion. On the funnel having the shaft, the funnel body and the bottom cover, the funnel body is hung by the braking action fixed to the shaft. Like this, you can stop the funnel body by using brake = so that the weight of the funnel body is not loaded on
5之周邊部,防止藉由石英所構成之漏斗本體之下端和 盍之周邊部之破損。 -制ΐ具有軸:漏斗本體和底蓋之漏斗,具有覆蓋軸之 央衣官。像這樣,可以藉由利用石英製管而覆蓋軸,以 於防止對於燈材之污染。The peripheral part of 5 prevents damage to the lower end of the funnel body made of quartz and the peripheral part of the puppet. -The shaft has a shaft: a funnel of the funnel body and the bottom cover, and a central clothing officer covering the shaft. In this way, the shaft can be covered with a quartz tube to prevent contamination of the lamp.
7054-6132.PF(N2);Ahddub.ptd7054-6132.PF (N2); Ahddub.ptd
200415266200415266
五、發明說明(19) 在具有軸、漏斗本體和底蓋之漏斗,設置抑制漏斗旋 轉之旋轉制動器。像這樣,藉由漏斗具有旋轉制動器而即 使是在將漏斗放入至副室來吊掛漏斗之狀悲下’裝填燈 材,也不會疏忽地旋轉漏斗。此外,在投下燈材時,也不 會疏忽地旋轉漏斗,因此,可以防止由於振動等而接觸及 破損到爐内品或室。V. Description of the invention (19) A funnel that prevents the funnel from rotating is provided on the funnel having a shaft, a funnel body and a bottom cover. As described above, since the funnel has a rotation stopper, even if the funnel is loaded while the funnel is suspended in the auxiliary chamber, the funnel is not inadvertently rotated. In addition, the funnel is not inadvertently rotated when the lamp is dropped, so it is possible to prevent contact and damage to the product or chamber in the furnace due to vibration and the like.
在具有軸、漏斗本體和底蓋之漏斗,於旋轉制動器之 前端,設置可旋轉之滾筒。像這樣,可以藉由在旋轉制動 器之前端,設置可旋轉之滾筒,而使得漏斗呈滑動地上下 動作於副室内。 【發明效果】 如果藉由本發明之矽單結晶拉引裝置的話,則在追加 料之時,能夠抑制由於來自熔融液之輻射熱所造成之燈材 之加熱,因此,可以將燈材順暢地投入至石英坩堝。A funnel having a shaft, a funnel body and a bottom cover is provided with a rotatable roller at the front end of the rotary brake. In this manner, a rotatable roller can be provided at the front end of the rotary brake so that the funnel can slide up and down in the subchamber. [Effect of the invention] If the silicon single crystal pulling device of the present invention is used, the heating of the lamp material due to the radiant heat from the molten liquid can be suppressed when the material is added, so the lamp material can be smoothly input to the Quartz crucible.
也就是說,在本發明之矽單結晶拉引裝置,漏斗本 體、軸和燈材係位處於底蓋之上部,來自熔融液之輻射熱 係由下方開始曝曬。此外,非透明石英之紅外線透過率係 4 0%〜6 0% ’格外地更加低於透明石英之9〇%。因此,能夠 減少由於來自熔融液之輻射熱所造成之燈材之溫度上升。 因此’在藉由習知之矽單結晶拉引裝置時,在追加料之 際,燈材係炫融及貼附於底蓋上,或者是由於熱膨脹而形 成橋接,無法落下,但是,如果藉由本發明之矽單結晶拉 引裝置的話’則能夠抑制燈材之加熱,格外地改善燈材之That is, in the silicon single crystal pulling device of the present invention, the funnel body, the shaft and the lamp material are positioned above the bottom cover, and the radiant heat from the molten liquid is exposed from the bottom. In addition, the infrared transmittance of non-transparent quartz is 40% ~ 60%, which is extremely lower than that of transparent quartz by 90%. Therefore, the temperature rise of the lamp due to the radiant heat from the melt can be reduced. Therefore, when the conventional silicon single crystal pulling device is used, when the material is added, the light material is melted and attached to the bottom cover, or the bridge is formed due to thermal expansion, and it cannot be dropped. The invention of the silicon single crystal pulling device 'can suppress the heating of the lamp material and improve the lamp material.
7054-6132-PF(N2);Ahddub.ptd 第24頁 200415266 五、發明說明(20) 掛上頻率。. 此外,在近年來,半導體晶圓之直徑係超過2 0 0mm之 3 0 0 mm者正在成為主流,隨著這個而使得單結晶晶塊所要 求之直徑也變大。相對於隨著該單結晶之大型化而造成之 加料量之增大、追加料重量之增大,能夠裝填大重量之燈 狀半導體原料,因此,本發明之矽單結晶拉引裝置係成為 藉由軸而支持重量之構造。也就是說,在本發明之矽單結 晶拉引裝置,藉由制動器而支持漏斗本體之整個重量,因 此,漏斗本體之重量係並無施加在底蓋之周邊部。因此, 可以使得破損之可能性變小。7054-6132-PF (N2); Ahddub.ptd Page 24 200415266 V. Description of the invention (20) Hang up the frequency. In addition, in recent years, semiconductor wafers with diameters exceeding 300 mm and 300 mm are becoming mainstream. With this, the required diameter of single crystal ingots has also become larger. Relative to the increase in the amount of the single crystal and the increase in the weight of the additional material, it is possible to load a large amount of lamp-shaped semiconductor raw materials. Therefore, the silicon single crystal pulling device of the present invention is borrowed. Structure supporting weight by shaft. That is, in the silicon single crystal pulling device of the present invention, the entire weight of the funnel body is supported by the brake. Therefore, the weight of the funnel body is not applied to the peripheral portion of the bottom cover. Therefore, the possibility of breakage can be reduced.
7054-6132-PF(N2);Ahddub.ptd 第25頁 200415266 圖式簡單說明 圖1係本發明之實施形態之矽單結晶拉引裝置之縱剖 面圖。 圖2 ( a)係圖1之A — A剖面之矽單結晶拉引裝置之橫剖 面圖;圖2 (b )係圖1之B — B剖面之矽單結晶拉引裝置之橫 剖面圖。 圖3係追加料製程之矽單結晶拉引裝置之縱剖面圖。 圖4係在追加料製程之燈材投入中之矽單結晶拉引裝 置之縱剖面圖。 圖5係在追加料製程而拉引變空之漏斗中之矽單結晶 拉引裝置之縱剖面圖。 圖6係在單結晶晶塊拉引製程而在晶種軸下吊種結晶 之狀態下之矽單結晶拉引裝置之縱剖面圖。 圖7係在單結晶晶塊拉引製程而拉引單結晶晶塊之狀 態下之矽單結晶拉引裝置之縱剖面圖。 圖8係在熔融投入至石英坩堝之燈材後之狀態下之矽 單結晶拉引裝置之縱剖面圖。 圖9係將多結晶矽之燈材來追加投入至石英坩堝後之 圖。 圖1 0 (a)至圖1 0 ( c )係使用捷可拉斯基法之一般之單結 晶晶塊拉引裝置之縱剖面圖。 圖1 1係在中吊式漏斗來使用透明石英之習知之矽單結 晶拉引裝置之縱剖面圖。 【符號說明】7054-6132-PF (N2); Ahddub.ptd Page 25 200415266 Brief Description of Drawings Figure 1 is a longitudinal sectional view of a silicon single crystal pulling device according to an embodiment of the present invention. Fig. 2 (a) is a cross-sectional view of the silicon single crystal pulling device of section A-A in Fig. 1; Fig. 2 (b) is a cross-sectional view of the silicon single crystal drawing device of section B-B in Fig. 1. Fig. 3 is a longitudinal sectional view of a silicon single crystal pulling device for an additional material manufacturing process. Fig. 4 is a longitudinal sectional view of a silicon single crystal pulling device in the input of a lamp material in an additional material process. Fig. 5 is a longitudinal cross-sectional view of a silicon single crystal pulling device in a funnel that draws and becomes empty during an additional material manufacturing process. Fig. 6 is a longitudinal cross-sectional view of a silicon single crystal pulling device in a state where a single crystal block is pulled and a seed crystal is suspended under a seed axis. Fig. 7 is a longitudinal sectional view of a silicon single crystal pulling device in a state where a single crystal block is pulled while a single crystal block is being pulled. Fig. 8 is a longitudinal sectional view of a silicon single crystal pulling device in a state where the lamp material is put into a quartz crucible after melting. Fig. 9 is a diagram after adding a polycrystalline silicon lamp material to a quartz crucible. Figs. 10 (a) to 10 (c) are longitudinal sectional views of a general single-junction ingot pulling device using the Jeclaschi method. Fig. 11 is a longitudinal sectional view of a conventional silicon single-junction crystal pulling device using a transparent quartz in a hanging funnel. 【Symbol Description】
7054-6132-PF(N2);Ahddub.ptd 第26頁 200415266 圖式簡單說明 1〜 早結晶晶塊, 10〜 矽單結晶拉 12 - ‘室; 14〜 副室; 16, i晶種轴, 18〜 閘閥; 20 - i石英坩堝; 22〜 石墨坩堝; 24, -加熱器; 26〜 斷熱材; 28 - ^支持轴; 30〜 漏斗 ; 32 - 漏斗本體; 34〜 轴; 36, i底蓋; 38〜 炼融液; 40 - i副室盖; 42〜 種結晶, 44 - ‘閘; 50〜 燈材; 52 - ◊上部筒體; 54〜 下部筒體; 56, i凸緣; 58〜 凸緣, 6 0〜連結器; 62〜 旋轉制動器 62a 〜滾筒; 6 4〜 制動器; 6 6〜頂板; 68〜 貫通孔; 7 0〜制動器; 72〜 吊棒; 7 4〜連結器; 76〜 石英玻璃棒 78, ☆石英管; 8 0〜 空氣孔; 82 - -間隙; 8 4〜 間隙部; 110 〜矽單結晶拉引裝置 ;1 2 0〜石英坩堝 136 〜底蓋。 響7054-6132-PF (N2); Ahddub.ptd Page 26 200415266 The diagram briefly illustrates 1 ~ early crystal block, 10 ~ silicon single crystal pull 12-'chamber; 14 ~ subchamber; 16, i seed axis, 18 ~ gate valve; 20-i quartz crucible; 22 ~ graphite crucible; 24,-heater; 26 ~ thermal insulation material; 28-^ support shaft; 30 ~ funnel; 32-funnel body; 34 ~ shaft; 36, i bottom Cover; 38 ~ smelting solution; 40-i auxiliary chamber cover; 42 ~ seed crystals, 44-'gate; 50 ~ light materials; 52-◊ upper cylinder; 54 ~ lower cylinder; 56, i flange; 58 ~ Flange, 60 ~ connector; 62 ~ rotary brake 62a ~ roller; 6 4 ~ brake; 6 6 ~ top plate; 68 ~ through hole; 70 ~ brake; 72 ~ hanging rod; 7 4 ~ connector; 76 ~ Quartz glass rod 78, ☆ Quartz tube; 8 0 ~ Air hole; 82--gap; 8 4 ~ gap section; 110 ~ silicon single crystal pulling device; 12 0 ~ quartz crucible 136 ~ bottom cover. ring
7054-6132-PF(N2);Ahddub.ptd 第27頁7054-6132-PF (N2); Ahddub.ptd Page 27
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JP4562139B2 (en) * | 2006-02-01 | 2010-10-13 | コバレントマテリアル株式会社 | Single crystal pulling apparatus and raw silicon filling method |
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JP5167942B2 (en) * | 2008-05-15 | 2013-03-21 | 株式会社Sumco | Method for producing silicon single crystal |
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JP6028128B1 (en) * | 2015-03-25 | 2016-11-16 | 株式会社トクヤマ | Input device, bulk silicon raw material supply method, silicon single crystal manufacturing device, and silicon single crystal manufacturing method |
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KR102474704B1 (en) * | 2021-02-19 | 2022-12-07 | 에스케이실트론 주식회사 | Single crystal growing apparatus |
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CN106978623A (en) * | 2016-01-05 | 2017-07-25 | 胜高股份有限公司 | Afterloading device and used the afterloading device silicon raw material melting method |
CN106978623B (en) * | 2016-01-05 | 2020-03-13 | 胜高股份有限公司 | Recharging device and method for melting silicon raw material using same |
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