JP4966267B2 - Recharge device, raw material supply device, and ingot pulling device - Google Patents

Description

  The present invention relates to an ingot pulling apparatus based on the Czochralski method (CZ method), and more particularly to a recharging apparatus that additionally inputs raw silicon.

  A specular wafer used as a substrate for manufacturing a semiconductor device is obtained by slicing a single crystal ingot into thin plate members and grinding and polishing the front and back surfaces thereof. This single crystal ingot can be produced by, for example, the Czochralski method. FIG. 10 is a longitudinal sectional view of a general single crystal ingot pulling apparatus 110 using the Czochralski method. Hereinafter, a method of manufacturing a single crystal ingot by the single crystal ingot pulling apparatus 110 will be briefly described with reference to FIG.

  The inside of the single crystal ingot pulling apparatus 110 is filled with an inert atmosphere such as a vacuum or argon gas, and as shown in FIG. 50 is inserted. Next, the quartz crucible 120 is heated by the heater 24 provided around the quartz crucible 120. Then, as shown in FIG. 10B, the polycrystalline silicon lamp material 50 in the quartz crucible 120 is melted by the heat of the heater 24 to become a raw material melt 38. Next, the single crystal silicon seed crystal 42 is lowered in the direction of the arrow while being suspended from the seed shaft 16, and immersed in the raw material melt 38. As the seed shaft 16 is pulled up, a single crystal grows under the seed crystal 42, and as shown in FIG. 10C, a cylindrical single crystal ingot 1 can be obtained.

  Then, the grown single crystal ingot 1 is taken out of the furnace. Conventionally, after this, it is necessary to stop heating by the heater, cool the inside of the single crystal ingot pulling apparatus 110, and re-input new quartz crucible and raw material polycrystalline silicon. Usually, if the raw material melt 38 remains in the quartz crucible 120 and is cooled below the melting point of silicon, the quartz crucible 120 is broken due to expansion at the time of solidification of the melt, so one single crystal from one quartz crucible 120 is broken. Only ingots can be produced, increasing costs. Therefore, after the manufacturing process of one single crystal ingot is finished, the raw material polycrystalline silicon for manufacturing the next single crystal ingot is produced without cooling the apparatus and preventing solidification of the raw material melt 38 in the quartz crucible 120. A single crystal ingot manufacturing method has been proposed in which polycrystalline silicon is melted and the single crystal ingot is pulled again.

  An example of a recharging device used for re-feeding the raw material polycrystalline silicon is disclosed in Japanese Patent Application Laid-Open No. 57-95891. Further, as a device having a similar configuration, there is a doping apparatus shown in JP-A-6-88865.

The normal suspension type hopper used as a recharge device or a doping device can select the quartz as a material in consideration of prevention of impurity contamination to the single crystal and heat resistance, and can confirm the state inside the hopper. It is manufactured using a transparent material.
International Publication No. 2002/068732 JP 09-208368 A Japanese Patent Application Laid-Open No. 08-295591

  However, when the lamp material 50 is packed in a suspending hopper 130 using transparent quartz in the bottom lid 136 shown in FIG. 11 and the lamp material 50 is additionally charged, the transparent quartz easily transmits heat. As the time held in the hopper 130 becomes longer, the inside of the hopper 130 becomes hot due to heat radiation from the melt 38. Therefore, there is a problem that the lamp members 50 or the lamp member 50 and quartz adhere to each other and the lamp members 50 are difficult to drop.

  In addition, the recharging device disclosed in Japanese Patent Application Laid-Open No. 57-95891 has a complicated shape and uses heat-resistant materials such as molybdenum and stainless steel. Since these metal materials are used immediately above the melt, Liquid may be contaminated. Further, when the hinge or the like is manufactured from a metal part, since lubrication is impossible in the above atmosphere, seizure and wear of the sliding part become a problem.

  The total weight of the lamp-shaped semiconductor material and the hopper itself is added to the joint between the seed shaft and the bottom cover. Since the raw lamp material loaded in the cylinder loads its weight on the cylinder, most of the weight is supported by the contact portion between the bottom lid and the tip of the cylinder.

  Furthermore, since the cylinder is made of quartz glass and the bottom cover is made of molybdenum plate, the contact portion between the cylinder and the quartz glass is more likely to be damaged when the weight to be loaded is increased.

  In addition, the doping apparatus shown in Japanese Patent Laid-Open No. 6-88865 can be used for recharging by enlarging it and loading it with a lamp-shaped semiconductor material. However, when this is lifted, the total weight is quartz. It joins the joint between the bottom cover and the seed shaft, and then the periphery of the upper side of the quartz bottom cover and the lower end of the tapered tube.

  Since this portion is in contact with quartz glass, the possibility of breakage increases when the weight to be loaded increases. Tungsten wire or the like is used to suspend the quartz glass bottom cover, but when the taper tube is filled with the lamp material, it comes into contact with the lamp material and causes metal contamination. Further, due to the friction between the tungsten wire and the lamp material, the bottom cover may not open even if the pulling shaft is continuously lowered after the taper tube is hooked on the ring plate.

  The invention according to the present application has been made in order to solve the above-described problems. The first object of the invention is to reduce the temperature rise of the lamp material, and the lamp material is placed on the bottom cover. An object of the present invention is to provide a recharging device capable of preventing melting and sticking or forming a bridge due to thermal expansion and preventing it from dropping.

  Further, the second object of the invention according to the present application is to increase the weight of the cylindrical body so that a large amount of ramp-shaped semiconductor material can be loaded in response to an increase in ingot size, an increase in charge amount, and an increase in recharge weight. An object of the present invention is to provide a recharging device that does not cover the bottom lid.

  Furthermore, the third object of the invention according to the present application is to provide a recharging device that does not use a metal material in a high-temperature part and that does not directly contact the lamp material with the metal material.

  A fourth object of the invention according to the present application is to provide a recharging device that is simple in operation and does not have a sliding portion between metals.

In order to achieve the above object, an invention according to the present application provides a recharge device having a substantially cylindrical hopper body, a bottom lid that opens and closes a lower end opening of the hopper body, and a shaft that suspends the bottom lid. The recharging device according to claim 1, further comprising a stopper provided on the shaft for hooking the hopper body.

Further, the invention according to the present application provides a recharge apparatus comprising: a substantially cylindrical hopper body; a bottom lid that opens and closes a lower end opening of the hopper body; and a shaft that suspends the bottom lid. The recharge device is characterized in that quartz glass containing bubbles is used as the material.

Furthermore, the invention according to the present application provides a recharge apparatus including a substantially cylindrical hopper body, a bottom lid that opens and closes a lower end opening of the hopper body, and a shaft that suspends the bottom lid. The recharge apparatus is characterized in that quartz having an infrared transmittance of 40% to 60% is used as the material.

Further, the invention according to the present application provides a recharge apparatus including a substantially cylindrical hopper body, a bottom lid that opens and closes a lower end opening of the hopper body, and a shaft that suspends the bottom lid. The recharging apparatus includes a substantially cylindrical quartz tube covering the shaft.

Furthermore, the invention according to the present application provides a recharge apparatus including a substantially cylindrical hopper body, a bottom lid that opens and closes a lower end opening of the hopper body, and a shaft that suspends the bottom lid. In addition, the recharge device has a detent.

The invention according to the present application includes a substantially cylindrical hopper body made of quartz glass, a bottom cover of a cone that opens and closes a lower end opening of the hopper body, a shaft that suspends the bottom cover, and the hopper body. And a first stopper for latching the hopper main body at a predetermined position above the crucible, the hopper main body is provided with a top plate covering an upper end opening, and the top plate is formed in the top plate. A shaft that has a through hole for inserting a shaft, the shaft having a length-adjustable suspension rod, and a second stopper that is fixed in the middle of the suspension rod and latches the hopper body. A recharging apparatus comprising: a quartz glass rod formed integrally with the bottom lid; and a coupler for coupling the suspension rod and the quartz glass rod.

Furthermore, the invention according to the present application provides a recharging device having a hopper body, a shaft, and a bottom lid, wherein the hopper body is a substantially cylindrical quartz glass cylinder and a top plate that covers an upper part of the cylinder. And a through hole for inserting a shaft formed in the top plate, and a first stopper provided on the outer periphery of the cylindrical body, and the shaft includes a suspension rod and a suspension rod A second stopper for securing the hopper main body fixedly, a quartz glass rod formed integrally with the bottom lid, a coupler for connecting the suspension rod and the quartz glass rod, A rechargeable battery comprising: a suspension rod, a quartz tube having a substantially cylindrical shape that covers the quartz glass rod, and the coupler; and the bottom lid is made of quartz glass having high heat insulation properties including bubbles. Device.

Further, in the invention according to the present application, the bottom cover has a hollow conical shape, and has an air hole in a bottom surface. The recharging device according to any one of the first to seventh inventions, It is.

Furthermore, the invention according to the present application provides a crucible for storing an ingot raw material melt, a heater for heating the raw material melt, a chamber for storing the crucible and the heater, and a recharge for adding the ingot raw material. In the ingot pulling device having the device, the recharging device has a substantially cylindrical hopper body, a bottom lid that opens and closes a lower end opening of the hopper body, and a shaft that suspends the bottom lid. An ingot pulling apparatus characterized in that quartz glass containing bubbles is used as the material of the bottom cover.

In addition, the invention according to the present application includes a quartz crucible that contains a raw material melt of an ingot, a graphite crucible that surrounds the quartz crucible, a heater that surrounds the graphite crucible, a chamber that accommodates each member, and a chamber A sub-chamber provided on the top of the sub-chamber via a gate valve, an openable / closable sub-chamber lid provided on the front surface of the sub-chamber, a flange-like gate provided on the inner surface of the sub-chamber, and movable up and down In an ingot pulling device having a seed shaft supported on the seed shaft and a hopper suspended from the seed shaft, the hopper has a hopper body, a shaft, and a bottom lid, and the hopper body is substantially cylindrical. A quartz glass cylinder having a shape, a top plate covering the top of the cylinder, a through-hole for inserting a shaft formed in the top plate, and a front plate provided on the outer periphery of the cylinder A first stopper capable of hooking the hopper main body to the gate, and the shaft has a hanging rod whose length can be adjusted, and a hook that is fixed to the middle of the hanging rod and hooks the hopper main body. A second stopper that can be stopped, a quartz glass rod formed integrally with the bottom lid, a coupler that connects the suspension rod and the quartz glass rod, the suspension rod and the quartz glass rod, An ingot pulling apparatus comprising: a substantially cylindrical quartz tube covering the coupler; and the bottom cover is made of quartz glass having high heat insulation properties including bubbles.

Furthermore, the invention according to the present application provides a crucible for storing a raw material melt of an ingot, a heater for heating the raw material melt, a chamber for storing the crucible and the heater, and at least one seed crystal in the raw material melt. A method of manufacturing an ingot using an ingot pulling device having a pulling means for creating an ingot by dipping and pulling a portion, and a hopper for adding the massive polycrystalline silicon, The polycrystalline silicon is supplied to the crucible, the raw material melt is prepared in the crucible by heating the polycrystalline silicon with the heater, and at least a part of the seed crystal is added to the raw material melt by the pulling means. Before dipping, the ingot manufacturing method is characterized in that massive polycrystalline silicon is added into the crucible by the hopper.

  According to the silicon single crystal pulling apparatus of the present invention, heating of the lamp material due to heat radiation from the melt can be suppressed during recharging, so that the lamp material can be smoothly put into the quartz crucible.

  That is, in the silicon single crystal pulling apparatus according to the present invention, the hopper body, the shaft, and the lamp material are located at the upper part of the bottom cover, and the heat radiation from the melt is applied from below. The infrared transmittance of opaque quartz is 40% to 60%, which is much lower than 90% of transparent quartz. Therefore, the temperature rise of the lamp material due to heat radiation from the melt can be reduced. Therefore, according to the conventional silicon single crystal pulling apparatus, during recharging, the lamp material may melt and stick on the bottom lid, or may form a bridge due to thermal expansion and may not fall. According to the silicon single crystal pulling apparatus, heating of the lamp material can be suppressed and the catching frequency of the lamp material can be remarkably improved.

  In recent years, the diameter of a semiconductor wafer having a diameter of more than 200 mm and 300 mm is becoming mainstream, and the diameter required for the single crystal ingot is also increasing accordingly. The silicon single crystal pulling device of the present invention supports the weight with a shaft so that a large amount of ramp-shaped semiconductor material can be loaded against the increase in charge amount and recharge weight accompanying the increase in size of the single crystal. It has a structure to do. That is, in the silicon single crystal pulling apparatus according to the present invention, since the entire weight of the hopper body is supported by the stopper, the weight of the hopper body is not applied to the peripheral portion of the bottom lid. Therefore, the possibility of breakage can be reduced.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS. However, the following is only one embodiment of the present invention and can be appropriately changed based on the technical common knowledge of those skilled in the art, and the technical idea of the present invention is not limited to these specific examples.

  Here, FIG. 1 is a longitudinal sectional view of a silicon single crystal pulling apparatus 10 using the Czochralski method in the embodiment of the present invention, and FIG. 2A is a silicon single crystal pulling apparatus in the AA cross section of FIG. 2 is a cross-sectional view of the silicon single crystal pulling apparatus 10 in the BB cross section of FIG. 1, FIG. 3 is a vertical cross-sectional view of the silicon single crystal pulling apparatus 10 in the recharging process, and FIG. FIG. 5 is a longitudinal sectional view of the silicon single crystal pulling apparatus 10 in which the lamp material 50 is being charged in the recharging process, and FIG. 5 is a longitudinal sectional view of the silicon single crystal pulling apparatus 10 in which the hopper 30 that has been emptied in the recharging process is being pulled. 6 is a longitudinal sectional view of the silicon single crystal pulling apparatus 10 in a state where the seed crystal 42 is suspended from the seed shaft 16 in the single crystal ingot pulling process, and FIG. 7 is a single crystal ingot pulling process. FIG. 8 is a vertical cross-sectional view of the silicon single crystal pulling apparatus 10 in a state where the single crystal ingot 1 is pulled up, and FIG. 8 is a vertical cross section of the silicon single crystal pulling apparatus 10 in a state before the lamp material charged in the quartz crucible 20 is melted. Figure.

  First, the overall configuration of the silicon single crystal pulling apparatus 10 will be briefly described, and then each apparatus will be described in detail. As shown in FIG. 1, the silicon single crystal pulling apparatus 10 in the present embodiment mainly includes a chamber 12 surrounding a quartz crucible 20, a graphite crucible 22, and a heater 24, and a raw material melt provided in an upper portion of the chamber 12. It comprises a sub-chamber 14 for holding and taking out the pulled single crystal ingot, and a seed shaft 16 for hanging a seed crystal or hopper 30.

  First, the chamber 12 will be described. As shown in FIG. 1, the bottomed cylindrical chamber 12 is provided with a support shaft 28 that can move up and down with the rotation axis directed vertically upward from the center of the bottom. A bowl-shaped graphite crucible 22 is fixed to the upper end of the support shaft 28, and a bowl-shaped quartz crucible 20 is fitted inside the graphite crucible 22. The reason why the double structure of the quartz crucible 20 and the graphite crucible 22 is adopted is that the crucible directly in contact with the raw material melt is preferably the quartz crucible 20 in order to prevent contamination of silicon. On the other hand, quartz is softened at a high temperature and has a property of being brittle and easily damaged, and therefore, the periphery thereof is surrounded by a graphite crucible 22.

  The graphite crucible 22 is surrounded by a heater 24, and the polycrystalline silicon lamp material 50 charged in the quartz crucible 20 is melted by the heater 24. A cylindrical heat insulating material 26 is disposed around the heater 24 concentrically with the chamber 12. The heat insulating material 26 prevents heat from the heater 24 from being directly radiated to the chamber 12.

  As shown in FIG. 1, a substantially cylindrical sub-chamber 14 is connected to the upper portion of the chamber 12 via a gate valve 18. The chamber 12 and the sub-chamber 14 can be communicated or blocked by the gate valve 18. On the other hand, although not shown, the upper end of the sub-chamber 14 is sealed with a top plate. As shown in FIG. 2A, the front surface of the sub-chamber 14 is provided with a sub-chamber lid 40 that can be opened and closed. By opening the sub-chamber lid 40, the single crystal ingot 1 pulled up can be removed, The hopper 30 can be attached to the seed shaft 16. As shown in FIG. 1, a flange-shaped gate 44 that protrudes toward the center for hooking a stopper 64 described later is provided on the inner peripheral surface of the sub-chamber 14.

  A seed shaft pulling device (not shown) is provided above the sub chamber 14. The seed shaft pulling device holds the seed shaft 16 so as to be movable up and down, and the seed shaft 16 is suspended along the central axis of the sub-chamber 14 through the top plate. A seed crystal is suspended from the lower end of the seed shaft 16 during the single crystal ingot pulling process, and a hopper 30 is suspended during the recharging process.

  Next, the configuration of the hopper 30 that is hooked to the seed shaft 16 at the time of recharging will be described with reference to FIG. The hopper 30 of the present embodiment is mainly composed of a hopper body 32, a shaft 34, and a bottom lid 36.

  As shown in FIG. 1, the hopper body 32 has a shape in which a small-diameter, generally cylindrical upper cylinder 52 and a large-diameter, generally cylindrical lower cylinder 54 are connected in series vertically. A flange 56 is provided at the lower end of the upper cylindrical body 52. On the other hand, a flange 58 is provided at the upper end of the lower cylindrical body 54.

  The lower cylinder 54 is made of quartz in order to prevent contamination of silicon. It is possible to confirm whether or not all of the polycrystalline silicon lamp material 50 loaded in the hopper 30 has fallen by configuring the lower cylindrical body 54 with transparent quartz.

  A coupler 60 having a substantially cylindrical shape and a U-shaped cross section is fixed to the lower end of the peripheral edge of the flange 56 with a bolt. The coupler 60 is composed of two members divided in the circumferential direction, and a flange 58 is sandwiched and fixed. Four screw holes are provided on the lower surface of the connector 60, and four SUS stoppers 64 are fixed to the screw holes. The stopper 64 is for hanging on the gate 44.

  As shown in FIG. 1 and FIG. 2A, two rotation stoppers 62 are fixed to the flange 56. The key-shaped detent 62 has a root portion fixed to the flange 56. On the other hand, a roller 62a made of a fluorine-based resin such as polytetrafluoroethylene is rotatably provided at the tip of the rotation stopper 62. The roller 62a is rotatable around a horizontal rotation axis. Therefore, the hopper 30 can move up and down smoothly in a state where the roller 62 a is in contact with the inner wall surface of the sub-chamber 14.

  By providing the rotation stopper 62 and the roller 62a in this way, the hopper 30 does not rotate carelessly even when the lamp material 50 is loaded while the hopper 30 is suspended. Moreover, since the hopper 30 does not rotate carelessly when the lamp material 50 is dropped, it is possible to prevent contact damage to the in-furnace product and the chamber due to vibration or the like.

  As shown in FIG. 1, a shaft 34 is inserted into the hopper body 32 configured as described above. The shaft 34 mainly includes a stopper 70, a suspension rod 72, a coupler 74, a quartz tube 78, and a quartz glass rod 76 formed integrally with the bottom cover 36.

  The upper portion of the shaft 34 is constituted by a metal suspension rod 72, and the upper end thereof is fixed to the seed shaft 16. A through hole 68 through which the suspension rod 72 is inserted is formed in the top plate 66 of the upper cylindrical body 52, and the suspension rod 72 is inserted into the hopper main body 32 through the through hole 68. A cylindrical metal stopper 70 is fixed in the middle of the suspension bar 72. Since the outer diameter of the stopper 70 is larger than the diameter of the through hole 68, the hopper body 32 is hooked by the stopper 70.

  With this configuration, the stopper 70 can support the entire weight of the hopper body 32. The length of the suspension bar 72 is adjustable, and when the hopper body 32 is hooked by the stopper 70, the gap between the bottom lid 36 and the lower cylinder 54 is eliminated, and the hopper body 32 The length is adjusted so that the weight does not reach the peripheral edge of the bottom lid 36.

  The lower end of the suspension rod 72 is connected to the upper end of the quartz glass rod 76 via a connector 74. A substantially cylindrical quartz tube 78 with a small diameter at the top is disposed so as to cover the metal suspension rod 72 and the quartz glass rod 76. The quartz tube 78 covers the metal portion and prevents metal contamination of the lamp material 50, which is raw material silicon.

  On the other hand, as described above, the quartz glass rod 76 is formed integrally with the bottom lid 36, and the bottom lid 36 is located at the lower end of the quartz glass rod 76. The bottom cover 36 has a conical shape, and the diameter of the bottom surface is larger than the inner diameter of the lower cylinder 54. The bottom cover 36 is made of quartz glass having high heat insulation properties by containing bubbles, and the inside of the bottom cover 36 is a cavity. As shown in FIG. 2B, the bottom lid 36 has four air holes 80 formed therein. The air holes 80 keep the air pressure inside the chamber 12 and the subchamber 14 and the air pressure in the hollow portion in the bottom lid 36 the same.

  In the present embodiment, the bottom cover 36 is made of quartz glass containing bubbles. However, any member having a lower infrared transmittance than transparent quartz glass may be used. For example, the infrared transmittance is higher than that of transparent quartz. Opaque quartz or the like having a low 40% to 70% can be used. Moreover, you may comprise from other raw materials, such as colored quartz glass. Furthermore, in addition to being excellent in heat resistance, a thin plate made of molybdenum is applied to the inner wall of the hollow portion in the bottom cover 36 in order to reflect the heat radiation from the melt 38 shown in FIG. It may be attached to a part. However, considering the contamination of the raw material silicon, the bottom cover 36 is most preferably composed of quartz glass containing bubbles and having high heat insulating properties.

  In the silicon single crystal pulling apparatus 10 of the present invention, the hopper main body 32, the shaft 34, and the lamp member 50 are located at the upper part of the bottom cover 36, and the heat radiation from the melt 38 is applied from below. The infrared transmittance of opaque quartz is 40% to 60%, which is much lower than 90% of transparent quartz. Therefore, the temperature rise of the lamp material 50 due to heat radiation from the melt 38 can be reduced. Therefore, according to the conventional silicon single crystal pulling apparatus, during recharging, the lamp material may melt and stick on the bottom lid, or may form a bridge due to thermal expansion and may not fall. According to the silicon single crystal pulling apparatus 10, heating of the lamp material 50 can be suppressed, and the catching frequency of the lamp material 50 can be remarkably improved.

  As shown in FIG. 4, when the lamp member 50 loaded in the hopper 30 forms a bridge by thermal expansion, the quartz tube 78 is fixed to the lower cylindrical body 54, and the quartz tube 78 is attached together with the bottom lid 36. May not descend. Thus, even if only the bottom lid 36 is lowered without the quartz tube 78 being lowered, the lamp member 50 is not brought into contact with the metal portion because the bottom lid 36 is suspended by the quartz glass rod 76.

  Next, the operation of the silicon single crystal pulling apparatus 10 configured as described above will be described with reference to FIGS. 1 and 3 to 7.

  First, the silicon single crystal pulling apparatus 10 opens the gate valve 18 and keeps the subchamber lid 40 closed.

  Next, after the chamber 12 and the sub-chamber 14 are replaced with an inert gas, the pressure is kept low with the inert gas flowing. Thereafter, by heating the heater 24, the polycrystalline silicon lamp material 50 previously charged in the quartz crucible 20 is melted to obtain a raw material melt 38.

  Next, the gate valve 18 is closed, and the chamber 12 and the sub-chamber 14 are shut off. As a result, the inside of the sub-chamber 14 is returned to normal pressure while the inside of the chamber 12 is maintained in an inert atmosphere and oxidation of the raw material melt 38 is prevented. Thereafter, the sub-chamber lid 40 is opened, and the seed crystal 42 is suspended from the lower end of the seed shaft 16 as shown in FIG.

  After the seed crystal 42 is suspended from the lower end of the seed shaft 16, the subchamber lid 40 is closed and the subchamber 14 is sealed. Thereafter, the subchamber 14 is depressurized and the subchamber 14 is filled with an inert atmosphere. Next, the gate valve 18 is opened, and the chamber 12 and the sub-chamber 14 are communicated. In this state, since the seed crystal 42 is located immediately above the melt 38, it is preheated by the radiant heat of the melt 38.

  Next, the seed shaft 16 pulling device is driven, the seed crystal 42 suspended from the lower end of the seed shaft 16 is lowered, and at least a part of the seed crystal 42 is immersed in the raw material melt 38. When the seed crystal 42 is immersed in the raw material melt 38, single crystal silicon gradually grows below the seed crystal 42. As the single crystal silicon grows, the single crystal ingot 1 having a desired diameter and length can be pulled by pulling the seed crystal 42 at a predetermined speed.

  Thereafter, the grown single crystal ingot 1 is raised to the subchamber 14. As shown in FIG. 7, after the single crystal ingot 1 is completely raised to the sub-chamber 14, the gate valve 18 is closed and the chamber 12 and the sub-chamber 14 are shut off. As a result, the inside of the chamber 12 is maintained in an inert atmosphere, and the inside of the sub-chamber 14 is returned to normal pressure in a state where oxidation of the raw material melt 38 is prevented. Thereafter, the subchamber lid 40 is opened, and the single crystal ingot 1 is taken out. Thus, the manufacturing process of the single crystal ingot is completed.

  Next, the recharge process will be described. After loading the raw material polycrystalline silicon lamp material 50 into the hopper 30, the subchamber lid 40 is opened and the hopper 30 is suspended from the seed shaft 16. In this state, the hopper body 32 is hooked by the stopper 70, but there is no gap between the bottom lid 36 and the hopper body 32.

  Next, the subchamber lid 40 is closed, and the subchamber 14 is sealed. Thereafter, the subchamber 14 is depressurized and the subchamber 14 is filled with an inert atmosphere. Next, the gate valve 18 is opened, and the chamber 12 and the sub-chamber 14 are communicated. In this state, when the seed shaft 16 is lowered, the hopper 30 suspended from the seed shaft 16 is lowered together with the seed shaft 16.

  When the hopper 30 is lowered, the stopper 64 comes into contact with the gate 44 as shown in FIG. If the seed shaft 16 is further lowered from this state, the gate 44 prevents the hopper body 32 from being lowered, and the shaft 34 and the bottom lid 36 are further lowered as shown in FIG. As a result, a gap 82 is formed between the hopper body 32 and the bottom lid 36, and the polycrystalline silicon lamp material 50 falls into the quartz crucible 20 from the gap 82 by its own weight.

  After all of the polycrystalline silicon lamp material 50 loaded in the hopper 30 is put into the quartz crucible 20, the seed shaft 16 is raised. Then, the shaft 34 and the bottom lid 36 rise together with the seed shaft 16. When the shaft 34 rises a certain distance and enters the state shown in FIG. 5, the hopper body 32 is latched by the stopper 70 coming into contact with the top plate 66. When the seed shaft 16 is further raised from this state, the shaft 34, the bottom cover 36, and the hopper main body 32 rise together with the seed shaft 16.

  After the hopper 30 is completely raised to the sub-chamber 14, the gate valve 18 is closed and the chamber 12 and the sub-chamber 14 are shut off. Thereby, the inside of the chamber 12 is maintained in an inert atmosphere, and the sub-chamber lid 40 is opened in a state in which the oxidation of the raw material melt 38 is prevented, and the inside of the sub-chamber 14 is returned to normal pressure. Thereafter, the hopper 30 is taken out. Thus, the recharge process is completed.

  By repeating the single crystal ingot pulling step and the recharging step, the single crystal ingot can be continuously manufactured without exchanging the quartz crucible 20.

  In the present embodiment, the inside of the bottom lid 36 is a hollow, but the bottom lid 36 may have a conical shape in which the inside is not hollow.

  In this embodiment, since the hopper body 32 has a substantially cylindrical shape, the bottom cover 36 has a conical shape. However, the shape of the bottom cover 36 is not limited to the conical shape, and the lower end opening of the hopper body 32 can be sealed. Any shape is acceptable. For example, when the hopper body 32 has a rectangular parallelepiped shape with an internal cavity, the shape of the bottom cover 36 can be a quadrangular pyramid.

  Furthermore, in the present embodiment, the gate valve 18 and the gate 44 are configured separately, but the gate valve 18 and the gate 44 may be configured integrally.

  In the present embodiment, the recharging apparatus is used for recharging after pulling up the single crystal ingot. However, the application of the present recharging device is not limited to recharging, and can be used for mass charging.

  Here, the mass charge is intended to reduce the cost by raising the single crystal ingot as large as possible in one pulling of the single crystal ingot, and the polycrystalline silicon lamp material 50 initially charged has melted. Later, a lamp material 50 of polycrystalline silicon is additionally added, and the raw material melt 38 is charged in a large amount into the quartz crucible 20.

  That is, since the polycrystalline silicon lamp material 50 shown in FIG. 1 is used as a material, the gap portion 84 between the lamp materials 50 is filled after melting, and the liquid level of the melt 38 is as shown in FIG. Go down. Therefore, after the melting, the polycrystalline silicon can be additionally charged by the present recharge apparatus.

  FIG. 9 is a view after additionally adding the polycrystalline silicon lamp material 50 to the quartz crucible 20. By additionally supplying the lamp material 50, as shown in FIG. 9, the liquid level of the melt 38 is increased, and a large amount of raw silicon can be charged into the quartz crucible 20. Thereby, a longer single crystal ingot can be pulled up and cost reduction can be achieved.

  Furthermore, there are no restrictions on the material and size of the ingot in carrying out the present invention. Of course, single crystal ingots of silicon, GaAs, GaP, InP, etc. of diameters and lengths that are currently manufactured are of course in the future. The present invention can also be applied to very large diameter and length ingots that can be manufactured.

  As described above, the present invention is not limited to the above-described embodiment, and various applications and modifications can be made within the scope of the invention with respect to the shape and material of the bottom cover and other structures. is there.

[Implementation data]
The effects of the case where recharging is performed using a conventional hopper and the case where recharging is performed using the hopper according to the present invention will be specifically described below with reference to Table 1.

  Table 1 shows the ratio at which when the lamp material is recharged using the hopper, the lamp material melts on the bottom lid and sticks or forms a bridge due to thermal expansion and does not fall. .

  As shown in Table 1, when the hopper of the present invention in which the bottom lid is made of opaque quartz is used, the lamp material at the time of recharging is compared with the case of using the conventional hopper in which the bottom lid is made of transparent quartz. The catch rate has been greatly improved. Here, the lamp material catch rate refers to the ratio of the number of batches in which the lamp material catches to the total number of recharges.

  Next, technical ideas other than the claims that can be grasped from the embodiment of the present invention will be described together with the effects thereof.

  In a hopper having a shaft, a hopper body, and a bottom lid, the bottom lid is made of a material having a lower infrared transmittance than transparent quartz. In this way, by configuring the bottom cover with a substance having a low infrared transmittance, the temperature rise of the lamp material due to heat radiation from the melt is suppressed, and the lamp material is melted and stuck on the bottom cover. It is possible to suppress the formation of a bridge due to the expansion so that it does not fall.

  In a hopper having a shaft, a hopper body, and a bottom lid, the hopper body is hooked by a stopper fixed to the shaft. In this way, by hooking the hopper body with the stopper, the weight of the hopper body is not applied to the peripheral part of the bottom cover, and the lower end of the hopper body made of quartz and the peripheral part of the bottom cover are prevented from being damaged. can do.

  A hopper having a shaft, a hopper body, and a bottom lid has a quartz tube covering the shaft. Thus, by covering the shaft with the quartz tube, it is possible to prevent the lamp material from being contaminated.

  A hopper having a shaft, a hopper body, and a bottom lid is provided with a detent that prevents rotation of the hopper. As described above, since the hopper has a rotation stopper, the hopper does not rotate carelessly even when the lamp material is loaded while the hopper is placed in the sub-chamber and the hopper is suspended. Further, since the hopper does not rotate carelessly when the lamp material is dropped, it is possible to prevent contact damage to the in-furnace product or the chamber due to vibration or the like.

  In a hopper having a shaft, a hopper body, and a bottom lid, a rotatable roller is provided at the tip of the detent. Thus, by providing a rotatable roller at the tip of the rotation stopper, the hopper can move up and down smoothly in the sub-chamber.

It is a longitudinal cross-sectional view of the silicon single crystal pulling apparatus in the embodiment of the present invention. 2A is a cross-sectional view of the silicon single crystal pulling apparatus in the AA cross section of FIG. 1, and FIG. 2B is a cross sectional view of the silicon single crystal pulling apparatus in the BB cross section of FIG. It is a longitudinal cross-sectional view of the silicon single crystal pulling apparatus in the recharging process. It is a longitudinal cross-sectional view of the silicon single crystal pulling apparatus during the charging of the lamp material in the recharging step. It is a longitudinal cross-sectional view of the silicon single crystal pulling apparatus that is pulling up the hopper that has been emptied in the recharging step. It is a longitudinal cross-sectional view of a silicon single crystal pulling apparatus in a state where a seed crystal is suspended from a seed shaft in a single crystal ingot pulling process. It is a longitudinal cross-sectional view of the silicon single crystal pulling apparatus in a state where the single crystal ingot is pulled in the single crystal ingot pulling step. It is a longitudinal cross-sectional view of the silicon single crystal pulling apparatus in a state after the lamp material put into the quartz crucible is melted. It is a figure after adding the lamp material of a polycrystalline silicon to a quartz crucible additionally. It is a longitudinal cross-sectional view of a general single crystal ingot pulling apparatus using the Czochralski method. It is a longitudinal cross-sectional view of a conventional silicon single crystal pulling apparatus using transparent quartz for a suspended hopper.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Single crystal ingot 10 ... Silicon single crystal pulling apparatus 12 ... Chamber 14 ... Subchamber 16 ... Seed shaft 18 ... Gate valve 20 ... Quartz crucible 22 ... Graphite crucible 24 ... Heater 26 ... Thermal insulation 28 ... Support shaft 30 ... Hopper 32 ... Hopper body 34 ... Shaft 36 ... Bottom lid 38 ... Melt 40 ... Subchamber lid 42 ... Seed crystal 44 ... Gate 50 ... Lamp material 52 ... Upper cylinder 54 ... Lower cylinder 56 ... Flange 58 ... Flange 60 ... Coupler 62 ... Stopper 62a ... Roller 64 ... Stopper 66 ... Top plate 68 ... Through hole 70 ... Stopper 72 ... Suspension rod 74 ... Coupler 76 ... Quartz glass rod 78 ... Quartz tube 80 ... Air hole 82 ... Gap 84 ... Gap portion 110 ... Silicon single crystal pulling device 120 ... Quartz crucible 136 ... Bottom lid.

Claims (8)

In a recharging device having a substantially cylindrical hopper body, a bottom lid that opens and closes a lower end opening of the hopper body, and a suspension means that suspends the bottom lid,
A first stopper provided on the hopper body for hooking the hopper body at a predetermined position above the crucible;
A second stopper provided on the suspension means for hooking the hopper body;
A substantially cylindrical quartz tube covering the suspension means;
A recharging device having a detent in the hopper body. In a recharging device having a substantially cylindrical hopper body, a bottom lid that opens and closes a lower end opening of the hopper body, and a suspension means that suspends the bottom lid,
A recharging apparatus comprising a substantially cylindrical quartz tube covering the suspension means in the hopper body.   The recharging device according to claim 1 or 2, wherein the quartz tube is slidable with respect to the suspension means. The recharging device according to claim 2, further comprising a stopper provided on the suspension means for hooking the hopper body. In a recharging device having a substantially cylindrical hopper body, a bottom lid that opens and closes a lower end opening of the hopper body, and a suspension means that suspends the bottom lid,
The recharging device according to claim 2 or 4, wherein the hopper body has a rotation stopper. A substantially cylindrical hopper body made of quartz glass, a bottom cover of a cone that opens and closes a lower end opening of the hopper body, a shaft that suspends the bottom cover, and a hopper body that is provided on the hopper body and that is above the crucible. In a recharging device having a first stopper for hooking in place,
The hopper body has a top plate that covers an upper end opening, and a through hole for inserting a shaft formed in the top plate,
The shaft includes a suspension rod whose length can be adjusted, a second stopper that is fixed in the middle of the suspension rod, and is used to hook the hopper body, and a quartz glass rod that is molded integrally with the bottom lid. If, have a, a coupler for connecting the suspension rod and said quartz glass rod,
Wherein the hopper body, recharge, characterized in that have a quartz tube having a substantially cylindrical shape covering the hanging part of the rod and the quartz glass rod and the coupling device. A raw material supply apparatus that is used for growing a single crystal by the Czochralski method and charges a solid raw material to a raw material melt in a crucible,
A cylindrical raw material supply pipe for filling the solid raw material;
A conical bottom lid for opening and closing the lower open end of the raw material supply pipe;
A suspension member that penetrates the inside of the raw material supply pipe while being covered with a protective pipe and is connected to the bottom cover, and allows the bottom cover to be lowered and the raw material supply pipe and the bottom cover to be lifted;
A latching member for stopping the lowering of the raw material supply pipe;
A lifting means that allows the raw material supply pipe and the bottom cover to be lifted and lowered through the suspension member;
A raw material supply apparatus, wherein a lower open end of the raw material supply pipe is opened and the solid raw material is charged into a raw material melt in a crucible. A quartz crucible for containing an ingot raw material melt, a graphite crucible for enclosing the quartz crucible, a heater for enclosing the graphite crucible, a chamber for accommodating the respective members, and an upper part of the chamber via a gate valve A sub-chamber lid provided on the front surface of the sub-chamber, an openable / closable sub-chamber lid, a flange-shaped gate provided on the inner surface of the sub-chamber, a seed shaft supported to move up and down, and the seed An ingot pulling device having a hopper suspended from a shaft,
The hopper has a hopper body, a shaft, and a bottom lid,
The hopper body is provided on a substantially cylindrical quartz glass cylinder, a top plate that covers the top of the cylinder, a shaft insertion through-hole formed in the top plate, and an outer periphery of the cylinder. A first stopper capable of hooking the hopper body to the gate,
The shaft includes a suspension rod whose length can be adjusted, a second stopper fixed to the middle of the suspension rod and capable of hooking the hopper body, and quartz glass formed integrally with the bottom lid. A rod that connects the suspension rod and the quartz glass rod; and a substantially cylindrical quartz tube that covers a part of the suspension rod and the quartz glass rod and the coupler. Ingot pulling device.

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