CN206109597U - Single crystal stick seeding and shouldering device and single crystal growing furnace - Google Patents
Single crystal stick seeding and shouldering device and single crystal growing furnace Download PDFInfo
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- CN206109597U CN206109597U CN201621105765.2U CN201621105765U CN206109597U CN 206109597 U CN206109597 U CN 206109597U CN 201621105765 U CN201621105765 U CN 201621105765U CN 206109597 U CN206109597 U CN 206109597U
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- shouldering
- seeding
- single crystal
- crucible
- preserving container
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Abstract
The utility model discloses a single crystal stick seeding and shouldering device and single crystal growing furnace belongs to monocrystalline silicon and makes technical field, single crystal stick seeding and shouldering device, including the weight that is located the crucible top covering near being fixed with the reflection on the lateral wall of seed crystal link of weight, the reflection lid is conical surface shape, and vertex of a cone angle is 150 to 180, and the conical surface is towards silicon liquid, the single crystal growing furnace includes single crystal stick seeding and shouldering device. The utility model discloses the success rate of seeding and shouldering be can improve greatly, seeding and shouldering time are shortened.
Description
Technical field
This utility model is related to monocrystal silicon manufacturing technology field, more particularly to a kind of monocrystal rod seeding and shouldering device, list
Brilliant stove and its process.
Background technology
In monocrystal rod pulling process, seeding and shouldering are the fine or not key factors of crystal growth, if in the seeding stage
Dislocation can not completely be excluded, shouldering or isometrical initial stage monocrystalline will break rib, how rapidly and efficiently seeding and shouldering become
The subject matter of each monocrystalline producer research, the seeding, shouldering particularly with large size single crystal rod seems more difficult, therefore closes
Suitable seeding, shouldering process are particularly important.
Current seeding and shouldering device necessarily have prolonging for temperature only by the temperature control liquid level temperature of heater
Slow and concussion, this cannot ensure that temperature plateau changes, prevent seeding and the success rate of shouldering from being effectively guaranteed；Due to
Thin footpath diameter is less, for drawing large scale crystal bar（More than 12 inches）The scattering of seed crystal far can not meet, and need secondary putting
Shoulder just can be completed, and greatly increase the time of seeding and shouldering；Current seeding, the big multiplex setting technological parameter of shouldering technique, control
Temperature compensation value processed controls the diameter of thin footpath, and the speed of shouldering speed adjusting the temperature of surface of the silicon liquid；Large size single crystal
Rod also using the method for secondary shouldering, can greatly increase the time of seeding and shouldering.
Therefore, how the success rate of a kind of raising seeding and shouldering is provided, is shortened seeding and the monocrystal rod of shouldering time is drawn
Brilliant and shouldering device and single crystal growing furnace, are the technical problems of those skilled in the art's urgent need to resolve.
Utility model content
The technical problems to be solved in the utility model, is to provide a kind of monocrystal rod seeding and shouldering device and single crystal growing furnace, its
More energy-conservation, efficiency high, can greatly improve the success rate of seeding and shouldering, shorten seeding and shouldering time.
To solve above-mentioned technical problem, technical solution adopted in the utility model is：
A kind of monocrystal rod seeding and shouldering device, including the weight above crucible, in the close seed crystal of the weight
Reflection cap is fixed with the side wall of connection end, the reflection cap is in cone-shaped, and vertex of a cone angle is 150 ° to 180 °, and the conical surface is towards silicon
Liquid.
Preferably, the conical surface port outside diameter size is between 175mm to 215mm, and reflection cap bottom is apart from silicon liquid
The distance of upper surface is 100mm to 300mm.
Preferably, the cone-shaped inner surface of the reflection cap is processed by shot blasting.
Preferably, being provided with the internal diameter tubular flange consistent with weight external diameter, the cylinder of reflection cap at the top of the reflection cap
It is fixedly connected by clip between shape flange and weight.
Preferably, being additionally provided with Tetrafluoro spacer between clip and tubular flange.
Preferably, the reflection cap is prepared using refractory metal material.
A kind of single crystal growing furnace, including the monocrystal rod seeding and shouldering device described in power any of the above-described.
Preferably, the single crystal growing furnace is also included for holding the crucible of silicon liquid, positioned at crucible outside and for crucible
The heater and the heat-preserving container outside heater of interior silicon liquid heating, is provided with graphite crucible, in stone on the outer surface of crucible
The bottom of black crucible is provided with the crucible support for supporting graphite crucible, and guide shell is provided with outside weight.
Preferably, the heat-preserving container includes upper heat-preserving container and middle heat-preserving container, the upper end of the upper heat-preserving container is provided with insulation
Lid, is connected between the upper heat-preserving container and middle heat-preserving container by support ring, is provided with described between middle heat-preserving container and graphite crucible
Heater.
It is using the beneficial effect produced by above-mentioned technical proposal：This utility model is connected by the close seed crystal in weight
Connect and install on the side wall at end reflection cap, reflection cap is tapered, vertex of a cone angle is 150 ° to 180 °, seed crystal contact surface of the silicon liquid, liquid
The heat for facing upwards radiation runs into reflection cap, and major part can be reflected back toward surface of the silicon liquid, this adds increased surface of the silicon liquid center
Temperature, reduces the radial symmetry gradient of silicon solution surface so that increase the temperature of surface of the silicon liquid in the seeding stage, to a certain degree
The upper power for reducing heater, reduces seeding power, and with the increase of seeding length, reflection cap gradually becomes remote apart from liquid level, instead
The heat for being emitted back towards solution surface is also gradually decreased, and liquid level temperature is gradually lowered, and the speed of seeding is also gradually accelerated therewith；When drawing
Crystalline substance is completed the shouldering stage, and reflection cap has been out effect substantially, and now the temperature of liquid level is then in than relatively low rank
Section, the shouldering initial stage can quickly complete the opening of crest line, then coordinate the reduction of heter temperature, whole shouldering process comparing again
The short time completes, and greatly shortens seeding and shouldering time；The change for increasing silicon liquid liquid level temperature after reflection cap is not complete
By heater power control, but determined by reflection heat and both the thermal convection current inside liquid level, this is different from conventional hot right
Stream does leading, because reflection thermal control heating capacity reacts more rapid and temperature oscillation amplitude very little, then coordinates suitable temperature
Offset just can effectively control the success rate of seeding and shouldering stage, and temperature change is than shallower, the success of seeding and shouldering
Rate is greatly promoted.
Description of the drawings
Fig. 1 is the structural representation of one embodiment of monocrystal rod seeding of the present utility model and shouldering device；
Fig. 2 is the structural representation of the weight in Fig. 1；
Fig. 3 is the top view of Fig. 2；
Fig. 4 is the structural representation of single crystal growing furnace one embodiment of the present utility model；
Each figure number is entitled：1-insulation cover, 2-upper heat-preserving container, 3-guide shell, 4-support ring, 5-heater, 6-
Middle heat-preserving container, 7-silicon liquid, 8-graphite crucible, 9-crucible support, 10-crucible, 11-reflection cap, 12-clip, 13-weight, 14-
Seed crystal.
Specific embodiment
Below in conjunction with the accompanying drawings and one embodiment is described in further detail to this utility model.
As shown in figure 1, this utility model provides a kind of monocrystal rod seeding and shouldering device, including positioned at the top of crucible 10
Weight 13, be fixed with reflection cap 11 on the side wall of the connection end of close seed crystal 14 of the weight 13, the reflection cap 11 is in
Cone-shaped, vertex of a cone angle is 150 ° to 180 °, and the conical surface is towards silicon liquid 7.
The beneficial effect of said apparatus is：This utility model is by the side wall in the connection end of close seed crystal 14 of weight 13
Upper installation reflection cap 11, reflection cap 11 is tapered, and vertex of a cone angle is 150 ° to 180 °, and conical surface lower pyramid mouth is towards silicon liquid, reflection cap
11 cone-shaped inner surface is processed by shot blasting, surface keeps smooth and light, the contact silicon liquid 7 of seed crystal 14 surface, liquid level spoke upwards
The heat penetrated runs into reflection cap 11, and major part can be reflected back toward the upper surface of silicon liquid 7, this adds increased the temperature of the centre of surface of silicon liquid 7
Degree, reduces the radial symmetry gradient on the surface of silicon liquid 7 so that increase the temperature on the surface of silicon liquid 7 in the seeding stage, to a certain extent
The power of heater 5 is reduced, seeding power is reduced, solution surface thermograde diminishes, the power of heater 5 reduces this and is more beneficial for
The temperature stabilization of silicon liquid level, reduces heat vibrations；After temperature is suitable, seed crystal 14 according to setting speed rise, thin footpath it is straight
Footpath control in 6.0mm or so, with the growth of thin footpath, with the increase of seeding length, reflection cap 11 apart from the upper surface of silicon liquid 7 by
Gradual change is remote, and the heat for being reflected back solution surface is also gradually decreased, and liquid level temperature is gradually lowered, and the speed of seeding also gradually adds therewith
Hurry up；When seeding is completed the shouldering stage, reflection cap 11 has been out effect substantially, and now the temperature of liquid level is then in
Than the relatively low stage, the shouldering initial stage can quickly complete the opening of crest line, and the reduction of the temperature of heater 5 is then coordinated again, entirely put
Shoulder process is completed in the shorter time, seeding and shouldering time more than 50% can be reduced, when greatly shortening seeding and shouldering
Between；The change for increasing the liquid level temperature of silicon liquid 7 after reflection cap 11 is not complete by the Power Control of heater 5, but by reflection heat
Determine that this is different from conventional thermal convection current and does leading with both thermal convection currents inside liquid level, because reflection thermal control heating capacity is anti-
More rapid and temperature oscillation amplitude very little is answered, then coordinates suitable temperature compensation value just can effectively control seeding and shouldering
The success rate in stage, seeding stage adjustment thin footpath diameter setting value is 4mm to 8mm, and the amplitude of shouldering phase temperature compensation is reduced
About 30%, than shallower, the success rate of seeding and shouldering is greatly promoted temperature change, more energy-conservation, efficiency high.
Further, the conical surface port outside diameter size is that and the bottom of reflection cap 11 is apart from silicon between 175mm to 215mm
The distance of the upper surface of liquid 7 is 100mm to 300mm.Above-mentioned size design is further limited the size of reflection cap 11 and position
Fixed, it is ensured that it match with the size of existing crucible 10, preferably guarantee heat is not lost in, the temperature of the centre of surface of silicon liquid 7,
The success rate for improving seeding and shouldering is finally reached, shortens seeding and the purpose of shouldering time.
Further, the top of the reflection cap 11 is provided with the internal diameter tubular flange consistent with the external diameter of weight 13, reflection cap
It is fixedly connected by clip 12 between 11 tubular flange and weight 13, between clip 12 and tubular flange phenyl tetrafluoride pad is additionally provided with
Piece.Above-mentioned fixed form is simple, convenient, convenient operation, can conveniently adjust distance of the reflection cap apart from silicon liquid level, and fix tightly
Solid, it is reliable.
Further, the reflection cap 11 is prepared using refractory metal material, it is preferred to use molybdenum, and molybdenum has higher melting
Point, can life-time service, in addition, it also has very high reflectance, it is ensured that enough reflection heat.
A kind of single crystal growing furnace, including the monocrystal rod seeding and shouldering device described in any of the above-described, are also included for holding silicon
The crucible 10 of liquid 7, positioned at the outside of crucible 10 and the heater 5 that is used to heat the silicon liquid 7 in crucible 10 and outside heater 5
The heat-preserving container in portion, is provided with graphite crucible 8 on the outer surface of crucible 10, is provided with for supporting graphite crucible 8 in the bottom of graphite crucible 8
Crucible support 9, is provided with guide shell 3 outside weight 13；The heat-preserving container includes upper heat-preserving container 2 and middle heat-preserving container 6, the upper heat-preserving container
2 upper end is provided with insulation cover 1, is connected by support ring 4 between the upper heat-preserving container 2 and middle heat-preserving container 6, in the He of middle heat-preserving container 6
Described heater 5 is provided between graphite crucible 8.Using this single crystal growing furnace, using the reflection cap 11 of taper, by selecting different cones
Drift angle degree and conical surface lower pyramid mouth external diameter size, and adjust the bottom of reflection cap 11 apart from the distance of the upper surface of silicon liquid 7 to obtain difference
Seeding and shouldering time and success rate, by testing optimum selecting, can greatly improve the success rate of seeding and shouldering, and shortening is drawn
The brilliant and shouldering time.
Specific case used herein is set forth to principle of the present utility model and embodiment, above example
Explanation be only intended to help and understand method of the present utility model and its core concept.It should be pointed out that for the art
For those of ordinary skill, on the premise of without departing from this utility model principle, some changing can also be carried out to this utility model
Enter and modify, these are improved and modification is also fallen in this utility model scope of the claims.
Claims (9)
1. a kind of monocrystal rod seeding and shouldering device, including positioned at crucible（10）The weight of top（13）, it is characterised in that：Institute
State weight（13）Close seed crystal（14）Reflection cap is fixed with the side wall of connection end（11）, the reflection cap（11）In the conical surface
Shape, vertex of a cone angle is 150 ° to 180 °, and the conical surface is towards silicon liquid（7）.
2. a kind of monocrystal rod seeding according to claim 1 and shouldering device, it is characterised in that：The conical surface port outside diameter
Size is and reflection cap between 175mm to 215mm（11）Bottom is apart from silicon liquid（7）The distance of upper surface is 100mm to 300mm.
3. a kind of monocrystal rod seeding according to claim 1 and shouldering device, it is characterised in that：The reflection cap（11）'s
Cone-shaped inner surface is processed by shot blasting.
4. a kind of monocrystal rod seeding according to claim 1 and shouldering device, it is characterised in that：The reflection cap（11）'s
Top is provided with internal diameter and weight（13）The consistent tubular flange of external diameter, reflection cap（11）Tubular flange and weight（13）Between lead to
Cross clip（12）It is fixedly connected.
5. a kind of monocrystal rod seeding according to claim 4 and shouldering device, it is characterised in that：In clip（12）With tubular
Tetrafluoro spacer is additionally provided between flange.
6. a kind of monocrystal rod seeding according to claim 1 and shouldering device, it is characterised in that：The reflection cap（11）Adopt
Prepared with refractory metal material.
7. a kind of single crystal growing furnace, it is characterised in that：Including the monocrystal rod seeding any one of claim 1 to 6 and shouldering dress
Put.
8. a kind of single crystal growing furnace according to claim 7, it is characterised in that：Also include for holding silicon liquid（7）Crucible
（10）, positioned at crucible（10）Outside is simultaneously used for crucible（10）Interior silicon liquid（7）The heater of heating（5）With positioned at heater
（5）Outside heat-preserving container, in crucible（10）Outer surface be provided with graphite crucible（8）, in graphite crucible（8）Bottom be provided with for
Support graphite crucible（8）Crucible support（9）, in weight（13）Outside is provided with guide shell（3）.
9. a kind of single crystal growing furnace according to claim 8, it is characterised in that：The heat-preserving container includes upper heat-preserving container（2）With in
Heat-preserving container（6）, the upper heat-preserving container（2）Upper end be provided with insulation cover（1）, the upper heat-preserving container（2）With middle heat-preserving container（6）Between
By support ring（4）Connection, in middle heat-preserving container（6）With graphite crucible（8）Between be provided with described heater（5）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621105765.2U CN206109597U (en) | 2016-10-09 | 2016-10-09 | Single crystal stick seeding and shouldering device and single crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621105765.2U CN206109597U (en) | 2016-10-09 | 2016-10-09 | Single crystal stick seeding and shouldering device and single crystal growing furnace |
Publications (1)
| Publication Number | Publication Date |
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| CN206109597U true CN206109597U (en) | 2017-04-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621105765.2U Active CN206109597U (en) | 2016-10-09 | 2016-10-09 | Single crystal stick seeding and shouldering device and single crystal growing furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109898133A (en) * | 2017-12-11 | 2019-06-18 | 有研半导体材料有限公司 | A kind of gas guiding device for highly doped silicon crystal growth |
-
2016
- 2016-10-09 CN CN201621105765.2U patent/CN206109597U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109898133A (en) * | 2017-12-11 | 2019-06-18 | 有研半导体材料有限公司 | A kind of gas guiding device for highly doped silicon crystal growth |
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