TW200409285A - Gap-filling process - Google Patents

Gap-filling process Download PDF

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TW200409285A
TW200409285A TW91134251A TW91134251A TW200409285A TW 200409285 A TW200409285 A TW 200409285A TW 91134251 A TW91134251 A TW 91134251A TW 91134251 A TW91134251 A TW 91134251A TW 200409285 A TW200409285 A TW 200409285A
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Taiwan
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layer
trench filling
filling material
trench
material layer
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TW91134251A
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Chinese (zh)
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TWI223389B (en
Inventor
Chun-Jen Weng
Juan-Yi Chen
Hong-Tsz Pan
Cedric Lee
Der-Yuan Wu
Chia Hsiang Lin
Yung Sung Yen
Lawrence Lin
Tseng Ying-Chung
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United Microelectronics Corp
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Abstract

A gap-filling process is provided. A substrate having a dielectric layer thereon is provided. The dielectric layer has an opening therein. A gap-filling material layer is formed over the dielectric layer and inside the opening. A portion of the gap-filling material is removed from the gap-filling material layer to expose the dielectric layer. A gap-filling material treatment of the surface of the gap-filling material layer and the dielectric layer is carried out to planarize the gap-filling material layer so that a subsequently formed bottom anti-reflection coating or material layer over the gap-filling material layer can have a high degree of planarity.

Description

200409285 五、發明說明(1) 發明領域 本發明是有關於一種半導體元件(semiconductor device)製程,且特別是有關於一種溝填(gap-filling)製 程。 先前技術 在半導體製程中,溝填技術的應用十分的廣泛,舉凡 是在半導體製程所形成的開口中,以各種的沈積方法將材 料層填入開口的製程,例如是在淺溝渠隔離(Shal low Trench Isolation,STI)結構的溝渠中填入絕緣材料,在 内層介電層結構(Inter-Layer Dielectric, ILD)的接觸 窗、中填入導體層,在内金屬介電層(Inter - Metal Dielectric, IMD)結構的介層窗中填入導體層,或是在金 屬内連線的雙重鑲傲(dual damascene)開口中填入導體層 等,都可以視為溝填技術的應用。 請參照第1 A圖至第1 D圖,第1 A圖至第1 D圖所繪示為在 習知一種在介層窗先定義雙重鑲故(Via First Dual Damascene, VFDD)結構的製造方法中,使用溝填技術以於 介層窗開口中形成溝填材料層的製程流程剖面圖。 首先,請參照第1A圖,提供一基底1〇〇。此基底丨〇〇具 有一導線102。且於基底丨00上依序形成有保護層1〇4、介' 電層106、蝕刻中止層108、介電層110、頂蓋層112,並且 形成有開口以作為介層窗開口丨丨4,且於介層窗開口丨丨4 部暴露出保護層1 〇 4。 — 接著’請參照第1 B圖,在基底1 〇 〇上形成一溝填材料200409285 V. Description of the invention (1) Field of the invention The present invention relates to a semiconductor device process, and in particular to a gap-filling process. In the semiconductor process, the trench filling technology is widely used in the prior art. For example, in the opening formed by the semiconductor process, a material layer is filled into the opening by various deposition methods, for example, in shallow trench isolation (Shal low Trench Isolation (STI) structure is filled with insulating materials, contact windows in the inter-layer dielectric structure (Inter-Layer Dielectric, ILD), conductor layers, and inter-metal dielectric (Inter-Metal Dielectric, Filling the conductor layer in the interlayer window of the IMD structure, or filling the conductor layer in the dual damascene openings of the metal interconnects, can be considered as the application of trench filling technology. Please refer to FIG. 1A to FIG. 1D, which are shown in FIG. 1A to 1D as a method for manufacturing a Via First Dual Damascene (VFDD) structure in a via window. In the figure, a cross-sectional view of a manufacturing process using trench filling technology to form a trench filling material layer in an opening of a via window. First, referring to FIG. 1A, a substrate 100 is provided. This substrate has a wire 102. A protective layer 104, a dielectric layer 106, an etch stop layer 108, a dielectric layer 110, and a capping layer 112 are sequentially formed on the substrate 00, and an opening is formed as an opening of the dielectric window. 4 A protective layer 104 is exposed at the opening of the interlayer window. — Next ’Please refer to FIG. 1B to form a trench filling material on the substrate 100

200409285 五、發明說明(2) 層11 6以填滿介層窗開口 11 4。 接著’请參照第1 C圖’以研磨或回姓的方法,移除多 餘的溝填材料層116至露出頂蓋層112表面,以於介層窗開 口 1 1 4中形成溝填材料層1 i 8。 接著’請參照第1 D圖,在頂蓋層11 2與溝填材料層11 8 上形成底層抗反射層120(bottom anti-reflection coating layer, BARC layer) 〇 然而,上述在介層窗開口 11 4中形成溝填材料層丨丨8的 製程具有下述之問題: 當溝填材料層11 6形成於基底1 〇 〇上時,於介層窗開口 11、4處形成有下凹輪廓,然而,即使經由回蝕或研磨以形 成溝填材料層11 8,此下凹輪廓依然存在,並使得後續形 成於其上的底層抗反射層120與光阻層同樣具有此下凹輪 廊’而此不平坦的輪廓將會造成所謂的條紋(striati〇n) 現象’此條紋現象的產生將會使得光阻厚度的均勻性不 佳’關鍵尺寸(Critical Dimension,CD)的控制不佳與蝕 刻後監視(After Etching Inspection,AEI)偏差等問 題,而無法得到正確的圖案。 此外,溝填材料層11 8可能會受到形成於其上的底層 抗反射層1 2 0或是光阻層破壞,亦即是底層抗反射層丨2 〇或 是光阻層可能會與溝填材料層丨丨8互相混雜 (Intermixed),因而導致了溝填材料損失(gap_f i i ! ing material l〇ss),此結果同樣會產生條紋現象,或是導致 内金屬介電層蝕刻後的圖案輪廓不佳,而同樣不利形成正200409285 V. Description of the invention (2) The layer 11 6 fills the opening of the via window 11 4. Then, please refer to FIG. 1C, by grinding or returning the last name, remove the excess trench filling material layer 116 to expose the surface of the top cover layer 112, so as to form the trench filling material layer 1 in the interlayer window opening 1 1 4 i 8. Next, please refer to FIG. 1D, a bottom anti-reflection coating layer (barc layer) 120 is formed on the capping layer 12 and the trench filling material layer 11 8. However, the above-mentioned opening 11 in the interlayer window The process of forming the trench filling material layer 4 in 4 has the following problems: When the trench filling material layer 116 is formed on the substrate 1000, a concave contour is formed at the openings 11 and 4 of the interlayer window, but Even if the trench filling material layer 118 is formed through etchback or grinding, the concave contour still exists, and the underlying anti-reflection layer 120 and the photoresist layer formed thereon also have the concave contour. Uneven contours will cause so-called streation phenomenon 'The occurrence of this streak phenomenon will make the uniformity of the photoresist thickness poor' Critical Dimension (CD) Control and Post-Etch Monitoring (After Etching Inspection, AEI) and other issues, and the correct pattern cannot be obtained. In addition, the trench filling material layer 118 may be damaged by the underlying anti-reflection layer 120 or the photoresist layer formed thereon, that is, the underlying antireflection layer 丨 2 or the photoresist layer may be filled with the trench. Material layers 丨 丨 8 are intermixed, which results in the loss of trench filling material (gap_f ii! Ing material l〇ss). This result will also produce streaks or lead to the pattern contour of the inner metal dielectric layer after etching. Poor, but equally unfavorable

卿§twf.ptd u u 第9頁 200409285 五、發明說明(3) - 確的圖案。 發明概要 因此,本發明的目的在提出一種溝填製程,能夠使溝 填材料層具有良好的表面平坦特性,進而使得形成於其上 的底層抗反射層或是光阻層亦具有良好的表面平坦特性。 本發明的另一目的在提出一種溝填製程,能夠保護溝 填材料層不被底層抗反射層或是光阻層破壞而導致溝填材 料損失,進而能夠使溝填材料層乃至於底層抗反射層或是 光阻層能夠具有良好的表面平坦特性。 本發明提出一種溝填製程,此溝填製程係提供已形成 有·介電層的一基底,且於介電層中形成有開口。接著,於 介電層上與開口形成溝填材料層,再移除部分溝填材料層 至露出介電層表面。然後,對溝填材料層與介電層表面進 行溝填材料處理製程,移除部分溝填材料層與介電層,以 使溝填材料層趨於平坦化。 而且,上述溝填材料處理製程係包括對介電層斑溝填 材料層進行一回蝕製程。 〃 、 尚且,於進行上述溝填材料處理製程之後,更可以對 溝填材料層進行電漿處理、紫外光固化或化學沈浸,以使 溝填材料層表面形成保護層。 '又 由上述可知’由於本發明係對溝填材料層進行一道溝 填材料處理製程,以使溝填材料層的表面趨於平坦化,因 此後續形成的沈積層亦能夠具有良好的平坦特性,而有利 於在後續之微影蝕刻製程得到正確的圖案。 200409285 五、發明說明(4) 而且’由於本發明係在溝填材料層表面形成保護層, 因此能夠避免後續形成的底層抗反射層或光阻層傷害到溝 填材料層’故而所形成的溝填材料層乃至於底層抗反射層 或光阻層亦能夠維持良好的平坦特性,同樣有助於在後續 之微影餘刻製程得到正確的圖案。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂,下文特舉出較佳實施例,並配合所附圖式,作詳細 說明如下: 圖式標示說明: 、100、200 :基底 102、202 :導線 104、204 :保護層 106、110、206、210 :介電層 108、208 :蝕刻中止層 112、212、212a :頂蓋層 11 4、214 :介層窗開口 116、118、216、218、218a ·溝填材料層 120、222、228 :底層抗反射層 曰 220、224 :溝填材料處理製程 2 2 6 :保護層 實施例 請參照第2 A圖至第2E圖,以對本發明私a 1軚佳實施例之一Qing §twf.ptd u u Page 9 200409285 V. Description of the Invention (3)-The correct pattern. SUMMARY OF THE INVENTION Therefore, the object of the present invention is to provide a trench filling process, which can make the trench filling material layer have good surface flatness characteristics, and then make the underlying anti-reflection layer or photoresist layer formed thereon also have good surface flatness. characteristic. Another object of the present invention is to provide a trench filling process, which can protect the trench filling material layer from being damaged by the underlying anti-reflection layer or photoresist layer and cause loss of the trench filling material, thereby enabling the trench filling material layer and even the bottom layer to resist reflection. The layer or the photoresist layer can have good surface flatness characteristics. The invention provides a trench filling process. The trench filling process provides a substrate on which a dielectric layer has been formed, and an opening is formed in the dielectric layer. Next, a trench filling material layer is formed on the dielectric layer and the opening, and a part of the trench filling material layer is removed to expose the surface of the dielectric layer. Then, the trench filling material layer and the surface of the dielectric layer are processed with a trench filling material, and a part of the trench filling material layer and the dielectric layer are removed, so that the trench filling material layer tends to be flat. Moreover, the above trench filling material processing process includes performing an etch-back process on the dielectric layer trench filling material layer. 、 Moreover, after performing the trench filling material processing process described above, the trench filling material layer may be further subjected to plasma treatment, UV curing or chemical immersion to form a protective layer on the surface of the trench filling material layer. 'It can be known from the above' that the present invention performs a trench filling material processing process on the trench filling material layer so that the surface of the trench filling material layer tends to be flat, so the subsequent deposited layer can also have good flatness characteristics. It is beneficial to obtain the correct pattern in the subsequent lithographic etching process. 200409285 V. Description of the invention (4) Furthermore, since the present invention forms a protective layer on the surface of the trench filling material layer, it can prevent the underlying anti-reflection layer or photoresist layer formed later from damaging the trench filling material layer. The filling material layer and even the underlying anti-reflection layer or photoresist layer can also maintain good flatness characteristics, which also helps to obtain the correct pattern in the subsequent photolithography process. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the following describes the preferred embodiments in detail with the accompanying drawings as follows: Detailed description of the drawings:, 100, 200: Substrates 102, 202: Wires 104, 204: Protective layers 106, 110, 206, 210: Dielectric layers 108, 208: Etching stop layers 112, 212, 212a: Cap layer 11 4, 214: Interlayer window openings 116, 118, 216, 218, 218a trench filling material layers 120, 222, 228: bottom anti-reflection layer 220, 224: trench filling material processing process 2 2 6: Examples of protective layers please refer to Figures 2A to 2E To one of the preferred embodiments of the present invention

200409285 五、發明說明(5) 種在介層窗先定義雙重鑲嵌結構的製造方法中,於介層窗 開口中形成溝填材料層的溝填製程做說明。 首先,請參照第2A圖,提供一基底200(為簡化起見, 基底200内之元件並未繪出)。此基底2〇〇具有一導線2〇2。 且於基底200上依序形成有保護層204、介電層206、蝕刻 中止層208、介電層21〇、頂蓋層212,並且於介電層206、 姓刻中止層208、介電層210、頂蓋層212形成有介層窗開 口 214 ’且於介層窗開口214底部暴露出保護層204。 其中,保護層204、蝕刻中止層208與頂蓋層212之材 質例如是氮化矽,形成方法例如是化學氣相沈積法 (Chemical Vapor Deposition, CVD)。 介電層206與介電層210之材質例如是低介電常數材料 包括含氟矽玻璃(Fluorinated Silicate Glass,FSG)、 未換雜矽玻璃(Undoped Silicate Glass, USG)、聚亞芳 香基醚((Poly (Arylene Ether), SiLK)、氟化聚亞芳香 基鱗(Fluonirated Poly (Arylene Ether),FLARE)與氫 化石夕倍半氧化物(Hydrogen Silsesquioxane, HSQ)等。形 成介電層2 0 6與介電層2 1 0之方法例如是旋轉塗佈法或化學 氣相沈積法。 接著,請參照第2B圖,在基底200上形成一溝填材料 層2 1 6以填滿介層窗開口 2 1 4,其中此溝填材料層2 1 6的材 質例如是I線(I - 1 i n e )光阻、深紫外光(D e e p u 11 r a Violet,DUV)光阻或是底層抗反射層等,且形成溝填材料 層2 1 6的方法例如是使用旋轉塗佈法,並且,如第2 b圖所200409285 V. Description of the invention (5) In the manufacturing method of the interlayer window first defining the dual mosaic structure, a trench filling process for forming a trench filling material layer in the opening of the interlayer window will be described. First, please refer to FIG. 2A to provide a substrate 200 (for simplicity, components in the substrate 200 are not shown). The substrate 200 has a wire 200. A protective layer 204, a dielectric layer 206, an etching stop layer 208, a dielectric layer 21, and a cap layer 212 are sequentially formed on the substrate 200, and the dielectric layer 206, the last stop layer 208, and the dielectric layer are formed. 210. The cap layer 212 is formed with a via window opening 214 ', and a protective layer 204 is exposed at the bottom of the via window opening 214. The materials of the protective layer 204, the etching stop layer 208, and the cap layer 212 are, for example, silicon nitride, and the forming method is, for example, a chemical vapor deposition method (Chemical Vapor Deposition, CVD). The materials of the dielectric layer 206 and the dielectric layer 210 are, for example, low dielectric constant materials including Fluorinated Silicate Glass (FSG), Undoped Silicate Glass (USG), and polyarylene ether ( (Poly (Arylene Ether), SiLK), Fluonirated Poly (Arylene Ether) (FLARE), and Hydrogen Silsesquioxane (HSQ), etc., forming a dielectric layer 2 0 6 The method for the dielectric layer 2 10 is, for example, a spin coating method or a chemical vapor deposition method. Next, referring to FIG. 2B, a trench filling material layer 2 1 6 is formed on the substrate 200 to fill the opening of the dielectric window. 2 1 4, wherein the material of the trench filling material layer 2 1 6 is, for example, I-line photoresistor, Deep UV 11 ra Violet (DUV) photoresistor or anti-reflection layer at the bottom, etc. The method for forming the groove filling material layer 2 1 6 is, for example, a spin coating method, and, as shown in FIG. 2 b

^6Q5twf.ptd 第12頁 200409285 五、發明說明(6) 示,溝填材料層216於介層窗開口214處會形成一下凹輪 廓。 接著’請參照第2 C圖,移除多餘的溝填材料層2 1 6以 於介層窗開口 2 1 4中形成溝填材料層2 1 8。其中移除多餘溝 填材料層2 1 6的方法例如是使用化學機械研磨法或是回餘 刻法’並研磨或回姓刻至露出頂蓋層212表面為止。由第 2C圖可知,即使經由研磨或回蝕溝填材料層2 1 6,於溝填 材料層2 1 8的表面仍然可能會具有下凹輪廓。 接著,請參照第2D圖,對頂蓋層212與溝填材料層218 進行一溝填材料處理製程220,以形成頂蓋層212a與溝填 材、料層2 1 8 a以平坦化溝填材料層2 1 8的表面。其中溝填材 料處理製程2 20例如是對頂蓋層212與溝填材料層218再進 行一回蝕製程,將下凹輪廓兩側之部分頂蓋層2 1 2與溝填 材料層218移除,以形成頂蓋層212a與溝填材料層218a, 使得溝填材料層2 1 8a的表面趨近於平坦。 接著’請參照第2 E圖,在溝填材料層2 1 8 a與頂蓋層 212a上形成底層抗反射層222,其中底層抗反射層222的材 質例如是有機底層抗反射塗膜材質包括聚醯亞胺 (Polyimide),形成底層抗反射層222之方法例如是旋轉塗 佈法。由於後續形成雙重金屬鑲嵌結構的製程係與習知方 法相同,因此在此不再贅述。 在上述較佳實施例中,為使頂蓋層212能夠在經由溝 填材料處理製程2 2 0,亦即是回蝕製程後依然保持其特 性,亦可以在形成頂蓋層2 1 2時形成較習知為厚的厚度,^ 6Q5twf.ptd Page 12 200409285 V. Description of the invention (6) shows that the groove filling material layer 216 will form a concave contour at the opening 214 of the interlayer window. Next, please refer to FIG. 2C, remove the excess trench filling material layer 2 1 6 to form the trench filling material layer 2 1 8 in the via window opening 2 1 4. The method of removing the excess trench filling material layer 2 1 6 is, for example, using a chemical mechanical polishing method or a back-etching method 'and grinding or back-cutting until the surface of the top cover layer 212 is exposed. It can be seen from FIG. 2C that even if the trench filling material layer 2 1 6 is ground or etched back, the surface of the trench filling material layer 2 1 8 may still have a concave profile. Next, referring to FIG. 2D, a trench filling material processing process 220 is performed on the capping layer 212 and the trench filling material layer 218 to form the capping layer 212a and the trench filling material and the material layer 2 1 8a to planarize the trench filling. The surface of the material layer 2 1 8. The trench filling material processing process 2 20 is, for example, performing an etch-back process on the capping layer 212 and the trench filling material layer 218 to remove a portion of the capping layer 2 1 2 and the trench filling material layer 218 on both sides of the concave contour. To form the capping layer 212a and the trench filling material layer 218a, so that the surfaces of the trench filling material layer 2 1 8a tend to be flat. Next, please refer to FIG. 2E, a bottom anti-reflection layer 222 is formed on the trench filling material layer 2 1 8 a and the cap layer 212 a. The material of the bottom anti-reflection layer 222 is, for example, an organic bottom anti-reflection coating material including poly The method for forming polyimide to form the bottom anti-reflection layer 222 is, for example, a spin coating method. Since the subsequent process of forming the dual metal mosaic structure is the same as the conventional method, it will not be repeated here. In the above preferred embodiment, in order to enable the capping layer 212 to retain its characteristics after the trench filling material processing process 2 2 0, that is, after the etch-back process, it may also be formed when the capping layer 2 1 2 is formed. Thicker than usual,

200409285 五、發明說明(7) 如此在經由溝填材料處理製程2 2 0的處理之後,不僅能夠 得到平坦化的溝填材料層2 1 8 a,亦能夠使頂蓋層2 1 2 a維持 原有的功能。 本發明除了上述較佳實施例之外,尚具有其他的實施 型態。第3A圖至第3B圖所繪示為本發明另一較佳實施例之 一種在介層窗先定義雙重鑲嵌結構的製造方法中,於介層 窗開口中形成溝填材料層的溝填製程流程剖面圖。其中第 3A圖係接續上述較佳實施例之第2D圖以進行,並且於第3A 圖與第3B圖中,與第2A圖至第2D圖相同的構件係使用相同 的標號並省略其說明。 • 首先,請參照第3 A圖,在對頂蓋層2 1 2與溝填材料層 218進行一溝填材料處理製程220之後,再對溝填材料層 218a進行一溝填材料處理製程224,以於溝填材料層218a 的表面形成一保護層2 2 6,以保護溝填材料層2 1 8 a不被後 續形成之底層抗反射層或是光阻層攻擊。其中溝填材料處 理製程224例如是使用電漿處理、UV固化(UV cure)或是化 學沈浸(chem i ca 1 i mmer s i on )等方法。 接著’凊參照第3 B圖’在溝填材料層21 8 a之保護層 226與頂蓋層212a上形成底層抗反射層228,其中底層抗反 射層228的材質例如是有機底層抗反射塗膜材質包括聚醯 亞’形成底層抗反射層2 2 8之方法例如是旋轉塗佈法。 同樣地,由於後續形成雙重金屬鑲嵌結構的製程係與習知 方法相同’因此在此不再資述。 並且’在苐2C圖的回钱或是研磨溝填材料層216的步200409285 V. Description of the invention (7) In this way, not only can the flat trench filling material layer 2 1 8 a be obtained, but also the cap layer 2 1 2 a can be maintained after the trench filling material processing process 2 2 0 is processed. Some features. In addition to the above-mentioned preferred embodiments, the present invention has other embodiments. FIG. 3A to FIG. 3B illustrate a trench filling process for forming a trench filling material layer in the opening of the interlayer window in a manufacturing method of the interlayer window first defining a dual mosaic structure. Process sectional view. Among them, FIG. 3A is continued from FIG. 2D of the above-mentioned preferred embodiment, and in FIGS. 3A and 3B, the same components as those in FIGS. 2A to 2D are denoted by the same reference numerals and descriptions thereof are omitted. • First, referring to FIG. 3A, after performing a trench filling material processing process 220 on the capping layer 2 12 and the trench filling material layer 218, a trench filling material processing process 224 is performed on the trench filling material layer 218a. A protective layer 2 2 6 is formed on the surface of the trench filling material layer 218a to protect the trench filling material layer 2 1 8 a from being attacked by the underlying anti-reflection layer or photoresist layer formed subsequently. The trench filling material processing process 224 uses, for example, plasma treatment, UV cure, or chemical immersion (chem i ca 1 i mmer s i on). Then, “凊 Refer to FIG. 3B”, a bottom anti-reflection layer 228 is formed on the protective layer 226 and the cap layer 212a of the trench filling material layer 21 8 a. The material of the bottom anti-reflection layer 228 is, for example, an organic bottom anti-reflection coating film. The method of forming the bottom anti-reflection layer 2 2 8 by using a material including polyurea is, for example, a spin coating method. Similarly, since the subsequent process of forming the dual metal damascene structure is the same as the conventional method ', it will not be described here. And ‘in the step of 2C drawing, or the step of grinding the trench filling material layer 216

200409285 五、發明說明(8) 驟中’如果能夠得到具有足夠平坦度的溝填材料層2 1 8的 話’本實施例亦可以省略第2D圖之溝填材料處理製程 220 ’而接續第2C圖進行溝填材料處理製程224,·以於溝填 材料層2 1 8a的表面形成保護層,再進行後續的步驟。 , 尚且,在本發明上述之所有實施例中,係使用雙鑲嵌 製程以做說明,然而本發明並不限定於此,亦可以應用於 其他在開口中填入溝填材料層的製程,例如是可以應用於 形成介層窗、接觸窗、導線(溝渠)亦或是淺溝渠隔離結構 等各種的製程。 是·使 下凹 除, 形成 性, 處理 形成 填材 射層 續之 以限 神和 絲上所述, 用回敍方法 輪廓處兩側 因此溝填材 的底層抗反 以能夠在後 此外,由於 以於溝填材 的底層抗反 料的損失, 或光阻層亦 微影餘刻製 雖然本發明 疋本發明, 範圍内,當 由於本 的溝填 的溝填 料層的 射層或 續之微 本發明 料層表 射層或 所以所 能夠維 程得到 已以— 任何熟 可作些 7又 W卜丁、河两 材料處理製程 材料層與頂蓋 表面能夠趨於 其他材質層能 影蝕刻製程得 係對溝填材料 面形成保護層 光阻層傷害到 形成的溝填材 持良好的平坦 正確的圖案。 較佳實施例揭 習此技藝者, 許之更動與潤 材料層進行一道例如 ,以將溝填材料層之 層(亦或是介電層)削 平坦,從而使得後續 夠具有良好的平坦特 到正確的圖案。 層表面進行溝填材料 ’因此能夠避免後續 溝填材料層以造成溝 料層乃至於底層抗反 特性,從而能夠在後 露如上,然其並非用 在不脫離本發明之精 飾’因此本發明之保200409285 V. Description of the invention (8) in the step 'If a groove filling material layer 2 1 8 with sufficient flatness can be obtained', this embodiment can also omit the groove filling material processing process 220 of the 2D figure and continue the figure 2C. A trench filling material processing process 224 is performed to form a protective layer on the surface of the trench filling material layer 2 1 8a, and then the subsequent steps are performed. Moreover, in all the above embodiments of the present invention, a dual damascene process is used for illustration, but the present invention is not limited to this, and can also be applied to other processes for filling a trench filling material layer in an opening, for example, It can be applied to various processes such as forming interlayer windows, contact windows, wires (ditches) or shallow trench isolation structures. Yes · Remove the depression, formability, and process the formation of the filling material injection layer, followed by the limitation of God and the silk. Use the retrospective method at both sides of the outline so the bottom layer of the groove filling material is anti-reflection to be able to be later. The bottom layer of the trench filling material is anti-loss, or the photoresist layer is also etched. Although the present invention and the present invention, within the scope, when the emission layer of the trench filling layer due to the trench filling is The surface layer of the material layer of the present invention or the dimensional range that can be obtained has been obtained. Any material that can be used to process the material and the process of the two materials processing process can be obtained by the etching process of other material layers. The formation of a protective photoresist layer on the groove filling material surface hurts the formed groove filling material to maintain a good flat and correct pattern. The preferred embodiment reveals the skill of the artist, and allows the modification to work with the wetting material layer, for example, to flatten the layer of the trench filling material layer (or the dielectric layer), so that it has a good flatness. The correct pattern. The surface of the layer is filled with groove filling material 'so it is possible to avoid subsequent groove filling material layers to cause the anti-reflective properties of the groove material layer and even the bottom layer, so that it can be exposed as above, but it is not used without departing from the decoration of the invention' Guarantee

第15頁 200409285 五、發明說明(9) 護範圍當視後附之申請專利範圍所界定者為準。Page 15 200409285 V. Description of Invention (9) The scope of protection shall be determined by the scope of the attached patent application.

第16頁 200409285 圖式簡單說明 第"圖至第㈣所繪示為習知_種在介層窗先 重镶欲結構的製造方法中.,於介層窗開口中形成溝填材料 層的溝填製程流程剖面圖, 第2A圖至第2E圖所繪示為本發明較佳實施例之一種在 介層窗先定義雙重鑲嵌結構的製造方法中,於介層窗開口 中形成溝填材料層的溝填製程流程剖面圖;以及θ ^ 第3Α圖至第3Β圖所繪示為本發明另一較佳實施例之— 種在介層窗先定義雙重鑲嵌結構的製造方法中,於介層窗 開口中形成溝填材料層的溝填製程流程剖面圖。 θPage 16 200409285 Brief description of the diagrams Figures quotations " shown in Figures ㈣ to ㈣ are familiar _ a kind of manufacturing method for re-mounting the structure in the interlayer window first, forming a trench filling material layer in the opening of the interlayer window A cross-sectional view of a trench filling process flow, shown in FIGS. 2A to 2E is a preferred embodiment of the present invention. In a manufacturing method of a via window first defining a dual mosaic structure, a trench filling material is formed in an opening of the via window. Cross-sectional view of the trench filling process flow of each layer; and θ ^ Figures 3A to 3B show another preferred embodiment of the present invention-a manufacturing method for defining a double mosaic structure in a via window first, in the medium Sectional view of a trench filling process flow for forming a trench filling material layer in a layer window opening. θ

Claims (1)

200409285200409285 1 · 一種 提供一 電層中形成 於該介 移除部 對該溝 製程,以去 材料層較平 2.如申 填材料處理 失製程。 3 ·如申 行該溝填材 選自電漿處 一,以於該 4. 如申 部分之該溝 研磨製程所 5. 如申 填材料層包 層所組之族 6. 如申 該溝填材料 7 ·如申 請專利 料處理 理、紫 溝填材 睛專利 填材料 組之族 請專利 括選自 群其中 請專利 層的方 請專利 溝填製程,包括: 基底,於該基底上形成有一介電層,且於該介 有一開口; 電層上與該開口形成一溝填材料層; 分該溝填材料層至露出該介電層表面;以及 填材料層與該介電層表面進行一溝填材料處理 除部分该介電層與該溝填材料層,並使該溝填 坦化。 請專利範圍第1項所述之溝填製程,其中該溝 製程包括對該介電層與該溝填材料層進行一回 範圍第1項所述之溝填製程,其中於進 製程之後,更包括對該溝填材料層進行 外光固化與化學沈浸所組之族群其中之 料層表面形成一保護層。 範圍第1項所述之溝填製程,其中移除 層的方法包括選自回蝕製程與化學機械 群其中之一。 I巳圍第1項所述之溝填製程,其中該溝 I線光阻、深紫外光光阻與底層抗反射 之一 ° 範圍第1項所述之溝填製程,其中形成 法包括旋轉塗佈法。 範圍第1項所述之溝填製程,其中在對1 · A process of providing an electrical layer formed in the dielectric removal section to the trench to remove the material layer is relatively flat. 2. If the material is processed, the process is lost. 3 · If the application of the trench filling material is selected from the plasma unit one, in the 4. As in the part of the trench grinding process 5. As the family of the material layer cladding group 6. As the trench filling Material 7 · If you are applying for patent material treatment, the patent filling material group of Zigou Filling Group, please include patents from the patent application layer. The process includes: a substrate, and a substrate is formed on the substrate. An electrical layer and an opening in the dielectric; a trench filling material layer is formed on the electrical layer and the opening; the trench filling material layer is divided to expose the surface of the dielectric layer; and a trench is formed between the filling material layer and the surface of the dielectric layer Filler processing removes part of the dielectric layer and the trench fill material layer, and makes the trench fill flat. Please refer to the trench filling process described in item 1 of the patent scope, wherein the trench manufacturing process includes performing the trench filling process described in scope 1 in the dielectric layer and the trench filling material layer, wherein after the base process, more A protective layer is formed on the surface of the material layer of the group consisting of external light curing and chemical immersion of the trench filling material layer. The trench filling process described in the first item of the scope, wherein the method for removing the layer includes one selected from the group of etch-back process and chemical mechanical group. The trench filling process as described in item 1 of the above description, wherein the trench is one of the I-line photoresist, deep ultraviolet photoresist, and anti-reflection of the bottom layer. The trench filling process as described in item 1, wherein the formation method includes spin coating. Buffa. The ditch filling process described in Scope 1 200409285 六、申請專利範圍 該溝填材料層與該頂蓋層表面進行該溝填材料處理製程之 後,更於該溝填材料層與該頂蓋層上形成一底層抗反射 層0 8 ·如申請專利範圍第1項所述之溝填製程,其中該開 口包括選自介層窗開口、接觸窗開口、溝渠、雙重鑲彼開 口所組之族群其中之一。 9· 一種溝填製程,適用於製造一雙重鑲嵌結構,包 括: 提供一基底;200409285 VI. Scope of patent application After the trench filling material layer and the capping layer surface are processed by the trench filling material, a bottom anti-reflection layer is formed on the trench filling material layer and the capping layer 0 8 · If applied The trench filling process as described in the first item of the patent scope, wherein the opening includes one of the groups selected from the group consisting of interstitial window openings, contact window openings, trenches, and double inlay openings. 9. A trench filling process suitable for manufacturing a dual mosaic structure, including: providing a substrate; 於遠基底上依序形成一保護層、一第'介電層、一餘 刻、中止層、一第二介電層與一頂蓋層; 於該第一介電層、該钱刻中止層、該第二介電層與該 頂蓋層中形成一介層窗開口; 於該頂蓋層上與該介層窗開口形成一溝填材料層; 移除部分該溝填材料層至露出該頂蓋層表面;以及 制 對該溝填材料層與該頂蓋層表面進行一溝填材料處理 製程’以去除部分該介電層與該溝填材料層,並使該溝填 材料層較平坦化。 1 0·如申請專利範圍第9項所述之溝填製程,其中該溝A protective layer, a first dielectric layer, a etch, stop layer, a second dielectric layer, and a cap layer are sequentially formed on the distant substrate; the first dielectric layer and the money etch stop layer are sequentially formed; Forming a dielectric window opening in the second dielectric layer and the capping layer; forming a trench filling material layer on the capping layer and the dielectric window opening; removing part of the trench filling material layer to expose the top The surface of the capping layer; and performing a trench filling material treatment process on the trench filling material layer and the surface of the capping layer to remove a portion of the dielectric layer and the trench filling material layer and make the trench filling material layer flat . 1 0. The trench filling process as described in item 9 of the scope of patent application, wherein the trench =f料處理製程包括對該頂蓋層與該溝填材料層進行一回 餘製程。 —妨U ·如申請專利範圍第9項所述之溝填製程,其中於進 =Γ φ ΐ材料處理製程之後,更包括對該溝填材料層進行 ^ 水處理、紫外光固化與化學沈浸所組之族群其中之The f-material processing process includes a back-up process of the capping layer and the trench filling material layer. —U U • The trench filling process as described in item 9 of the scope of the patent application, where after the material processing process, the trench filling material layer is further subjected to ^ water treatment, UV curing and chemical immersion Group of groups 第19買 200409285 .......... ---- -上 六、申請專利範圍 一,以於該溝填材料層表面形成〆保護層。 1 2·如申請專利範圍第9項所述之溝填製程,其中移除 部分之該溝填材料層的方法包拉選自回#製程與化學機械 研磨製程所組之族群其中之—。 13·如申請專利範圍第9項所述之溝填製程,其中形成 該該溝填材料層的方法包括旋轉塗佈法。 1 4 ·如申請專利範圍第9項所述之溝填製程,其中該溝 填材料層包括選自I線光阻、深紫外光光阻與底層抗反射 層所組之族群其中之一。 1 5 ·如申請專利範圍第9項所述之溝填製程,其中在對 該、溝填材料層與該頂蓋層表面進行該溝填材料處理製程之 後’更於該溝填材料層與該頂蓋層上形成一底層抗反射 層0Buy No. 19, 200409285 .......... -----Upper VI. Application for Patent Scope 1. A radon protection layer is formed on the surface of the trench filling material layer. 1 2. The trench filling process as described in item 9 of the scope of the patent application, wherein the method of removing a part of the trench filling material layer includes one selected from the group consisting of the back # process and the chemical mechanical polishing process. 13. The trench filling process according to item 9 of the scope of patent application, wherein the method for forming the trench filling material layer includes a spin coating method. 1 4. The trench filling process according to item 9 of the scope of the patent application, wherein the trench filling material layer includes one of the groups selected from the group consisting of I-line photoresist, deep ultraviolet photoresist, and bottom anti-reflection layer. 1 5 · The trench filling process as described in item 9 of the scope of patent application, wherein after the trench filling material treatment process is performed on the surface of the trench filling material layer and the top cover layer, A bottom anti-reflection layer is formed on the top cover layer
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