200405013 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係有關探針方法及探針裝置。更詳言之，是有 關於改善被檢查體之電極與探針之電極的電氣導通狀態之 探針方法及探針裝置。 【先前技術】200405013 (1) (ii) Description of the invention [Technical field to which the invention belongs] The present invention relates to a probe method and a probe device. More specifically, the present invention relates to a probe method and a probe device for improving an electrical conduction state between an electrode of a subject and a probe electrode. [Prior art]
半導體的處理工程中，包含檢查被檢體晶圓狀態之工 程，及檢查被檢體封裝狀態之工程等各種工程。在檢查半 導體電氣特性時，會令探針的尖端接觸半導體的電極。透 過該探針，從測試儀對半導體施加檢查用信號。半導體的 電極表面一旦放置在大氣中，該表面上會形成電氣絕緣之 氧化膜。因此，即使令探針接觸半導體的電極，兩者間無 法成爲電氣導通狀態，來自測試儀的檢查用信號，無法透 過探針而以良好效率傳達至電極。因此，先前是令探針在 所定的針壓下接觸電極，然後探針會在電極表面摩擦 (scrub)。藉由該摩擦，電極表面的氧化膜會被削下，進而 確保探針與電極間的電氣導通狀態。 【發明內容】 隨著被檢體（例如半導體製品）越來越朝向超高積體 化，半導體上所形成之層亦加速的薄膜化，其電極亦薄膜 化。如先前之採針方法’令探針以穿破電極上的氧化膜的 針壓來接觸，則有來自探針的針壓會使電晶體特性發生變 - 6- (2) (2)200405013 化之规慮。又，當電極的下層設置有低介電率材這類柔軟 的材料時’會有無法對探針施加上記針壓之課題。 本發明解決上記至少一個課題。若根據本發明的實施 形態’則只需令探針和電極接觸，就可改善兩者間的電氣 導通狀態。其結果爲，提供可確實實施高信賴性檢查之探 針方法及探針裝置。 本發明的其他目的及優點，記載於以下之說明書中， 其一部份係由該開示而可自明，或藉由本發明的實行而 得。本發明之該目的與優點，可藉由此處特別提及之手段 的組合而貫現。 按照本案發明的第一觀點，提供一種探針方法，使用 至少具備一根探針的探針裝置，檢查至少具備一個電極之 被檢體之電氣特性，該探針方法係具備下記特徵：（a ) 將被檢體的電極進行還原處理；（b )令被檢體的電極和 探針接觸；（c )對探針施加用以形成電熔現象（fritting) 之電壓，藉由該電壓所形成的電熔現象會使電極與探針在 電氣導通狀態下接觸。 該探針方法，理想爲具備下記構成a)乃至f)之至少一 項，或具備下記構成a)乃至f)之任意複數組合。 a) .該（a )的還原處理，係包含將被檢體加熱。 b) .其中該（b )之接觸，係令兩根探針接觸一個電 極。 c) .該（c )之用以使探針形成電熔現象的電壓，係 由測試儀電路的驅動器提供。 (3) (3)200405013 d) ·被檢體的電極，含有銅或銅合金。 e) .該（a )的還原處理之後，令被檢體的周圍充滿 非氧化性氣氛。 0·該電熔現象，係藉由使用繼電器（relays )使接 觸各電極的兩根探針交替切換而實施。 若根據本發明之第二觀點，可提供一種探針裝置，至 少具備一根探針，檢查至少具備一個電極之被檢體之電氣 特性’該探針裝置係具備下記機構：使用對被檢體的電極 有還原性之氣體以進行還原處理之機構；藉由促使被檢體 和探針中之至少一者的移動，使被檢體的電極與探針接觸 之機構；用以對探針施加用來形成電熔現象之電壓的電源 電路，該電壓施加至探針所致的電熔現象使電極與探針在 電氣導通狀態下接觸。 該探針裝置，理想爲具備具備下記構成g)乃至k)之 至少一項，或具備下記徽成g)乃至k)之任意複數組合。 g) ·被檢體之電極與探針接觸之機構中，接觸被檢體 之一個電極的探針係一對探針。 h) .電源電路係具有用以在一對探針間施加電壓的電 源，及使電源與探針間電氣連接開關的切換機構，及控制 切換機構之開關動作的控制器。 i) ·該探針裝置具備測試儀電路，電源電路的電源係 該測試儀電路的驅動器。 j )·使經過還原處理之被檢體周圍充滿非氧化性氣氛 之機構。 -8- (4) (4)200405013 k) ·復具備加熱被檢體之加熱機構。 l) .電源電路係具有用以在一對探針間施加電壓的電 源，及使電源與探針間電氣連接開關的繼電器。 m) .該一對探針，係分別具備固有之配線。 【實施方式】 本案發明的探針方法及探針裝置所檢查之被檢體，並 不侷限於半導體。本案發明之探針方法及探針裝置，可供 作檢查直接形成於半導體晶圓上的裝置、從半導體晶圓分 切出之單個裝置、LCD等之電氣特性用。可是，以下爲了 容易理解，茲以形成於半導體上之裝置的電氣特性檢查來 說明本案發明。 根據圖1〜圖8 C所示的實施形態，來說明本發明的 實施樣態。本發明的探針方法，係使用還原性氣體（例如 化成氣：forming gas)，將晶圓檢查用電極上所形成的氧 化膜進行還原處理。之後，利用電熔（flitting)現象穿破電 極上的氧化膜，以改善探針與電極間的電氣導通狀態。藉 由氧化膜的還原及電熔現象，可使探針與電極間之針壓降 低（例如，幾乎爲零）。其結果爲，可不損傷電極，並延 長探針的壽命。電熔現象，係對金屬（本發明中的電極） 表面所形成的氧化膜施加電壓（例如直流電壓），在氧化 膜中形成1〇5〜l〇6V/cm左右的電位梯度，使電流可在氧 化膜中流過。電熔現象，係因該電流而破壞氧化膜之現 象。此一現象發生的成因，可想成氧化膜的厚度和金屬的 -9 - (5) (5)200405013 組成的非均質性，導致電流能在氧化膜中流過。 以下說明本實施形態之探針裝置。本實施形態之探針 裝置1 〇 ’例如圖1所示，具備搬運被處理體（例如半導 體晶圓）W的轉輪室（未圖示），及檢查晶圓W之電氣 特性的探針室1 1，及控制這些被配置之各種機器的控制 器3 1 (未圖示）。 轉輪室，例如係具備將收容了 2 5片晶圓W的卡匣載 置的載置部，及從載置部的卡匣將晶圓W逐片搬送之晶 圓搬送機構’及透過該晶圓搬送機構在晶圓W搬送期間 將晶圓朝所定方向對齊之子旋盤。 探針室1 1，可具備：載置台（例如主旋盤）1 3 ;及 令主旋盤朝三軸（X軸、Y軸、Z軸）方向移動之移動機 構1 2 ;及令主旋盤朝0方向正逆旋轉之0驅動機構（未 圖示）；及配置在主轉盤1 3上方且具備利用電熔現象而 接觸至形成於晶圓W上之電極P (例如可爲銅、銅合金、 鋁等導電性金屬所成）之多數探針的探針卡1 4 ;及使該 探針卡1 4的探針與晶圓W的位置對準的對位機構（未圖 不）；及將晶圓W的電極P還原之還原處理手段15。還 原處理手段1 5，係將主轉盤1 3上的晶圓W的電極P還 原。利用電熔現象，探針可和經過還原處理的電極P呈良 好的電氣接觸。透過該探針，來自測試儀的測定信號可送 •至形成於晶圓W上的裝置，檢查其電氣特性。 探針卡1 4，可被固定在配置於探針室1 1上部之探頭 平板1 6。該探頭平板1 6上，測試頭T可和探針卡14呈 -10- (6) (6)200405013 導電連接而配置。移動機構1 2 ’如同圖所示’被配置在 探針室11內的底面，可具有：在γ方向上（同圖中爲垂 直紙面方向）移動的γ平台1 2 A ;及配置在該Y平台1 2 A 上，朝X方向移動之X平台12B;及配置在該X平台 12B上，朝Z方向升降之z軸機構12C。甚至，主轉盤可 藉由0驅動機構以中心軸爲中心而正逆時鐘方向旋轉。同 圖所示的移動機構1 2 ’僅爲一個例子’並不侷限於此。 該移動機構1 2，亦可爲例如利用線性馬達原理之機構。 載置台13，可內藏溫度調整範圍在-55 °C〜220 °C之溫度 調節機構。 探針卡14，如圖2A、2B所示，具有主基板141、中 間基板142、子基板143及針對一個電極之一對探針 144。兩根探針144，例如可爲圖2A、2B所示爲相同長 度，亦可爲圖3A、3B所示不同長度。如圖3A所示，在 探針1 44長度不同的情況，探針會以兩階段接觸電極。 即，引發電熔現象時，將晶圓 W朝上載送以使兩根探針 144接觸電極P。在引發電熔現象後，要檢查被檢體之電 氣特性時，令晶圓 W下降，電熔用探針144 ’會離開電 極，變成檢查用探針1 44和電極P接觸的狀態。 圖2B所示，主基板1 41、電熔線1 4 1A、繼電器電路 (例如壓電元件等）1 4 1 B、繼電器控制線1 4 1 C及信號線 1 4 1 D。主基板1 4 1的電熔線1 4 1 A、繼電器控制線1 4 1 C， 係透過纜線連接器1 45連接至電熔電路1 46。信號線（整 合阻抗50 Ω ) 141D，係可透過纜線連接器147連接至可 -11 - (7) (7)200405013 計測高速信號的機器（所謂高速信號確認用機器）1 4 8。 電熔電路146，可具備電熔控制電路（未圖示）3 1A。電 熔控制電路3 1A，可和電熔電路146獨立開來設置。電熔 控制電路3 1 A，除了可控制電溶電路1 46，還可透過繼電 器控制線1 4 1 C，控制繼電器電路1 4 1 B。電熔電路，可設 計成藉由連接探針裝置1 〇 (圖1 )，受到測試儀或探針裝 置的控制器3 1控制。中間基板142及子基板1 43，可具 備信號線1 4 2 A、1 4 3 A及接地線1 4 2 B、1 4 3 B。子基板1 4 3 的信號線143 A及接地線143B，係連接至探針144。因 此，電熔電路1 4 6在電熔控制電路3 1 A的控制下，透過 繼電器控制線1 4 1 C驅動繼電器電路1 4 1 B。繼電器電路 1 4 1 B，係發揮開關的效果，將電熔電路1 4 6和高速信號確 S忍用機器14·8之任一者連接至探針144。圖2Β中，141Ε 係形成於主基板1 4 1內的接地線。 以下說明電熔電路1 46的運作。（a )探針卡1 4的兩 根探針14 4以低針壓（例如1 mN以下）接觸電極p。 (b )電源146A，透過電壓施加緩衝放大器146A (圖 3 A、3 B )及電流感測阻抗1 4 6 B，對探針1 4 4中之一根施 加電壓。此時，當電極P上的氧化膜極薄的情況，僅只有 極小的穿隧電流通過。（c )隨著從電源1 4 6 A來的電壓値 徐徐增大’兩根採針1 4 4間的電位梯度也徐徐變大。當電 位梯度達到所定之電位梯度（例如1〇5〜1()6V/cm左&) 曰寸’則產生電熔現象。電熔現象會破壞電極的氧化膜，兩 根探針1 44就會接觸至電極P的金屬表面。其結果爲，兩 -12- (8) (8)200405013 根探針1 44間通過的電流値會急劇增大。電流測定器 14 6C會偵測出該電流値，使來自電源146A的電壓施加停 止以避免電流超過該電流値。其結果爲，兩根探針1 44與 電極P，呈良好的電氣接觸。 圖2B所示主基板1 4 1，爲了一個電極P設置兩個繼 電器電路1 4 1 B。一旦電極密度變高，則繼電器電路1 4 1 B 的數量會飛躍地增多。於是，例如圖4所示，可藉由針對 一個電極P設置一個繼電器電路1 4 1 B，而使繼電器電路 1 4 1 B的數量減半。此時，如同圖所示，令正要執行電熔 之電極P以外之電極P ’連接至信號線1 4 1 D的狀態下，執 行所定電極P的電熔。如圖5所示，藉由將測試儀的驅動 器1 4 9連接至電熔線1 4 1 A，可省略繼電器電路。此時， 藉由統合所有探針1 44 一倂進行電熔，可提高效率。 還原處理手段1 5，係例如在常壓或減壓下的探針室 11內，將銅、銅合金等所形成之電極P進行還原處理。 還原處理手段1 5，例如圖1所示，可具有：配置於探頭 平板1 6上的隔熱容器1 5 A，及隔熱容器1 5 A內的加熱器 1 5 B，及連接至隔熱容器1 5入口的供給管1 5 C，及連接至 供給管1 5 C之供給化成氣（f 〇 r m i n g g a s )的氣體供給手 段1 5 D，及控制來自氣體供給手段1 5 D之化成氣流量的流 量控制器1 5 Η。隔熱容器1 5 A內的加熱器1 5 B係藉由加 熱化成氣中的氫氣，以產生活性氫。活性氫的還原力很 強，可有效地還原主轉盤1 3上的晶圓W之電極。隔熱容 器1 5 A，可由例如石英、陶瓷等耐熱材料所形成。 -13- (9) (9)200405013 隔熱容器1 5 A可設置隔熱構造。隔熱構造，係可防 止加熱器15B的溫度下降，而使隔熱容器15A內的溫度 容易維持在所定之高溫。隔熱容器1 5 A之氣體噴出口 1 5 i，可如同圖所示，在鄰近探針卡1 4之位置，貫通探頭 平板1 6，並和主轉盤1 3呈面對面地配置。探針室1 1內 所設之排氣口 ΠΑ，可透過排氣管15E連接至排氣裝置 1 5 j。移動機構1 2的上端，其上部可配置開口且圍住主轉 盤13的扁平容器15F。該容器15F，可做成遠較主轉盤 13的直徑爲大而形成。在該大直徑之該容器15F內，會 充滿來自隔熱容器1 5 A所供給之化成氣，而成爲還原性 氣氛。隔熱容器15A之氣體噴出口 15i，可設置在只要是 主轉盤1 3移動必經範圍內的任意場所。 化成氣（forming gas)係還原性氣體的例子。化成氣可 爲氫氣與稀釋氣體（例如，氮氣等非活性氣體，或氬、氦 等惰性氣體）所成之混合氣體。化成氣的氫氣含有量，可 藉由流量控制器，調整在防報範圍內（例如5容量％以 下，具體而言爲3%左右）。 探針室1 1的內面，可配置遮蔽部材1 5 G。藉由遮蔽 部材1 5 G，可使探針室1 1內更加氣密，而容易形成所定 之減壓狀態。探針室1 1的內外，可分別配置氧濃度計 1 7。藉由氧濃度計1 7，可監視探針室1丨內外的氧濃度。 根據氧濃度計1 7的測定結果，警鈴等警報手段可通知氧 濃度達到危險區域濃度之事件。 圖1所記載的探針裝置1 0中，還原處理手段1 5係配 -14- (10) 200405013 置在探針室內。還原處理手段1 5，可配置在 (例如轉輪室內）。甚至，還原處理手段15， 針裝置1 0呈獨立個體而配置。 又，由氣體供給手段所供給之還原性氣體， 加熱而供給至被檢體上，而還原電極表面的氧化 況下’爲了更加提高還原性氣體的還原作用，亦 體加熱。 以下說明使用圖1所示的探針裝置1 〇的本 針方法的一個實施形態。在探針室11內，進行 與形成在晶圓W上的被檢體（裝置）w的電極 對準。在排氣管1 5 E排出探針室1 1內的空氣之 體供給手段1 5 D將化成氣供給至隔熱容器丨5 a 容器15A內的加熱器15B會加熱化成氣使氫氣 加熱過之化成氣會從隔熱容器1 5 A之噴射口 1 5 i 13上的晶圓W送出。容器15F內被化成氣所充 15F內形成還原氣氛。化成氣，會接觸載置於兰 上的晶圓W上所形成之裝置的電極p。在該接觸 體可藉由主轉盤1 3內的加熱手段3 3加熱（例如 上的溫度，理想爲260乃至3 00°C )。和晶圓W P接觸的化成氣中的活性化氫氣會將電極上的 原，使電極上的氧化膜變薄。 還原處理後的化成氣，由容器丨5 F經由g 內，從排氣管1 5 E向探針室1 1外排氣。該動作 針室1 1內的空氣排氣不夠徹底，導致氧濃度高 探針室外 亦可和探 亦可不經 膜。此情 可將被檢 發明之探 探針144 P的位置 同時，氣 內。隔熱 活性化。 往主轉盤 滿，容器 Ξ轉盤 13 前，被檢 200〇C 以 上的電極 氧化膜還 妄針室11 中，若探 於所定的 -15- (11) (11)200405013 設定値時，就會發出警報。 爲了防止經過還原處理的晶圓 w上再度形成氧化 膜，藉由從非氧化性氣體供給手段3 5透過管3 4，將非氧 化性氣體（例如氮氣）供給至晶圓W上，就可使晶圓W 置於非氧化性氣氛中。 參見圖2A、2B。和還原處理並行，或於還原處理之 後，移動機構1 2及升降機構，使探針卡1 4的探針1 44與 晶圓 W的電極以低針壓接觸。此時，各電極係和複數 (例如兩根）的探針1 44接觸。又，電熔電路146，係透 過繼電器控制線1 4 1 C，驅動繼電器電路1 4 1 B。繼電器電 路141B在將電熔線141A與探針144連接後，將電熔電 路146的所定電壓施加至探針144。在氧化膜經過還原處 理變爲極薄的情況下，一開始，探針1 44間會有穿隧電流 通過。穿隧電流係遠遠小於限制電流的微小電流。電熔電 路1 4 6會偵測出此一微小電流。之後，來自電熔電路1 4 6 的施加電壓或緩緩升壓，兩根探針1 4 4間的電位梯度會徐 徐增大。最後，發生電熔現象，電熔現象會將電極P的氧 化膜穿破，兩根探針1 44間的電流會急劇增大。在此時間 點上，停止電壓的施加。兩根探針1 4 4，分別和電極P呈 電氣導通。其結果爲，形成可以檢查被檢體的電氣特性之 狀態。在電熔控制電路的控制下，繼電器電路1 4 1 B透過 繼電器控制線1 4 1 C而被驅動。繼電器電路1 4 1 B，係將探 針1 44從電熔線1 4 1 A切離，切換至信號線丨4 1 D。這一連 串動作完全是對電極進行。探針1 44依序連接至測試儀 -16- (12) (12)200405013 1 3，開始執行檢查。 如以上說明，本實施形態的方法，具備使用化成氣將 晶圓W的電極P進行還原處理，及令電極P與探針144 接觸，及利用電熔現象使電極P與探針1 4 4呈電氣導通。 因此，探針1 44與電極P，可以極低的針壓（例如1 mN 以下）接觸，而使兩者呈電氣導通。其結果爲，即使電極 P的基底層等之成膜層爲薄膜化，探針的針壓也不會損及 基底層，而可穩定且高信賴度地進行檢查。本實施形態 中，加熱器1 5係將化成氣中的氫氣活性化，以經過活性 化的氫氣可在短時間內將電極P的氧化膜還原而去除。藉 由加熱化成氣及晶圓 W之至少一者，促進還原反應，可 使電極被確實地還原。 關於實施例 本實施例中，在觀察銅膜晶圓（銅薄膜=1 # m，TiN 基底=1 5 nm )之銅膜的氧化、還原現象的同時，確認了本 發明之探針方法的效果。 實施例1 本實施例中，以圖6所示電熔特性測定裝置200，使 用銅膜晶圓試料S 2以評估電熔導電特性。電熔特性測定 裝置200，係具備：擁有70根鎢製探針201、202、203 的探針卡，及透過構成繼電器掃描器之開關s W 1〜S W 3 0 連接至該探針卡的電熔用電源2 0 4，及測定通過探針之電 -17- (13) (13)200405013 流的電流計205，及測定探針與電極間之電壓的電壓計 2 0 6。7 0根探針中的6 0根，是當作3 0對電熔用探針 20 1、202使用。剩餘的1〇根探針，是當作用來使銅膜晶 圓試料S 2上的銅電極（膜）連接電壓計2 0 6之電壓測定 用探針203使用。數位類比（AD )轉換器（未圖示）連 接在 A — A ’間、B — C間、B — D間，該數位類比（AD ) 轉換器係監視電熔時的電流、電壓變化。藉由移動載置銅 膜晶圓試料S2的XYZ平台（未圖示），可改變探針的接 點位置和接觸力。 使用電熔特性測定裝置2 00的評估實驗是採以下要領 進行。 1 )藉由移動載置銅膜晶圓試料S2至所望位置，使探 針20 1、202、2 03機械地接觸至銅膜晶圓試料S2。 2 )構成繼電器掃描器的開關S W 1〜S W 3 0在全開的 狀態下，設定來自電源2 0 4的電壓。 3 )僅使開關S W 1呈閉狀態。藉由在連接至開關S W 1 的一對電熔接點用探針201、202之間，施加來自電源 204的電壓，引發電熔現象。 接著，開關S W1呈開狀態後，在僅使開關S W2呈閉 狀態下，和上述情況相同地，在連接至開關s W2之一對 電熔接點用探針201、202之間，施加來自電源204的電 壓’引發電熔現象。 以下皆同地，切換開關SW3〜30，在各30對探針間 引發電熔現象。 -18- (14) 200405013 4)將電源204的設定電壓切換成阻抗測定用 低電壓。 5 )和上d 3 )上之情況相同，藉由逐次切換開 至S W 3 0的連接， 測定3 0對探針2 0 1、2 0 2 抗。此時所測定之阻抗，因爲除了接觸阻抗以外， 連結探針201、202與電源2〇4之配線的阻抗，故 之阻抗値中扣除配線的阻抗（實測中約〇 · 7 Q )後 爲接觸阻抗。 銅膜晶圓試料S2，係使用將銅金屬濺鍍蒸著 過大氣保管之試料，和以下記還原處理條件進行氫 理並在真空中冷卻10分鐘後，取出置於大氣中之 又，測定氣氛的温度爲2 0〜2 2 °C ，相對溫度 23%。 〔還原處理條件〕 還原性氣體：氫氣 氣體流量：3 00 ml/分 氫氣壓力：130 Pa 處理時的試料溫度：4 9 0 K、6 2 0 K 圖 7A〜7C及圖 8A〜8C，係表示氫還原後之 露時間與電熔現象後之接觸抵抗（平均値）之關 7A〜7C係探針的接觸力設爲lmN之情形。圖8A 探針的接觸力設爲5mN之情形。圖7A〜7C及圖 所示的所有條件中，不將經過大氣保管的試料進行 之所定 關SW1 間之阻 還含有 從測得 之値作 後且經 還原處 試料。 I 20〜 .大氣暴 係。圖 〜8 C係 8A 〜8C >氫還原 -19- (15) 200405013 處理，和直接使用的情況（虛線）相 況的接觸阻抗變低。又，經過氫還原 露時間變長而其接觸阻抗會增加。 1 0 0〜3 0 0分之情況，接觸阻抗幾乎 料之値。這是因爲經過大氣暴露而發 驗的氣氛中，展示了 100〜3 00分的 回復到原先的氧化狀態。換言之， 3 0分鐘以內進行探針測定，就可獲 之低接觸阻抗。然後，一旦探針接觸 露在大氣中，故可使檢查中的接觸阻 在不將試料進行氫還原處理 (V = 0.5V )、低荷重（F=lmN )的條 5 Ω以上。在試料經過氫還原處理之 暴露20〜30分，在低電壓、低荷重 的低接觸阻抗。由圖 7C 可知 (V=10V )，則在低荷重（F=lmN ) 的低接觸阻抗。甚至，藉由施以氫還 料的前處理，可獲得在低電壓（V = 抗。換言之，若組合電熔與氫還原前 之機械或電氣的探針測定。 此外，本發明並不侷限於上述任 圓的還原處理手段，可採用圖2所示 可取代氫氣而適宜地選用不會對晶圓 體。晶圓的還原處理可爲將卡匣內之 比，經過氫還原之情 之情況，隨著大氣暴 然後，在大氣中暴露 回到了未經氫還原試 生再氧化所致。本實 暴露，會使試料幾乎 只要在氫還原處理後 得氫還原處理鎖帶來 ，由於接觸部不會暴 抗保持在低阻抗。 之情況下，低電壓 件下5接觸阻抗變成 情況下，即使在大氣 下仍可獲得1 Ω左右 ，若提高電熔電壓 下仍可獲得1 Ω左右 原處理作爲被測定試 0.5 V )下的低接觸阻 處理，可實現低損傷 何實施形態。例如晶 構成以外各種形態。 造成障害的還原性氣 晶圓一倂進行。上記 -20- (16) (16)200405013 實施形態中的被檢體雖然使用晶圓W，但晶圓以外的封裝 品，或LCD用基板亦可適用本發明。 若根據本發明的實施形態，可提供探針方法及探針裝 置，係只需使探針和檢查用電極接觸就可使兩者間確實呈 電氣導通，而可卻實地進行高信賴性之檢查。 更多的特徵及變更，爲該當技術領域之業者所能思及 者。因此，本發明係屬於更爲宏觀之立論，並非侷限於特 定之詳細說明及本說明書所公開之代表實施例。 因此，只要是在後附的申請專利範圍所定義的廣泛發 明槪念及等效之均等物之解釋範圍內、不脫離此者，可以 有各種變更。 【圖式簡單說明】 圖1係本發明之探針裝置的實施形態剖面圖。 圖2A、2B係表示圖1所示之探針卡，圖2A是其分 解側面圖，圖2 B係其方塊圖。 圖3 A、3 B係表示兩根探針長度不同時的動作槪念 圖’ 0 3 Α τη電溶動作時的側面圖’圖3 B是探針檢查動 作時的側面圖。 圖4係本發明之其他實施形態所用之探針卡的要部方 塊圖。 圖5係本發明之又一其他實施形態所用之探針卡的要 部方塊圖。 圖6係本發明之實施例所用之電熔特性測定裝置的槪 -21 - (17) (17)200405013 念圖。 圖7A〜7C係銅膜晶圓試料還原後暴露在大氣的時間 與經過該電熔後之接觸電阻値的關係圖。 圖8 A〜8 C係銅膜晶圓試料還原後暴露在大氣的時間 與經過該電熔後之接觸電阻値的關係圖。 主要元件對照表 10 探針裝置 11 探針室 12 移動機構 1 2 A γ平台 1 2B X平台 1 2C z軸機構 13 主轉盤 14 探針卡 14 1 主基板 1 4 1 A 電熔線 1 4 1 B 繼電器電路 1 4 1 C 繼電器控制線 1 4 1 D 信號線 142 中間基板 1 42A 信號線 142B 接地線 143 子基板 -22- (18) 200405013 143 A 信號線 143B 接地線 144 探針 145 纜線連接器 146 電熔電路 147 纜線連接器 148 高速信號確認用機器The semiconductor processing process includes various processes such as a process for checking the wafer state of the subject and a process for checking the package state of the subject. When checking the electrical characteristics of a semiconductor, the tip of the probe will contact the electrode of the semiconductor. Through this probe, a test signal is applied to the semiconductor from the tester. Once the semiconductor electrode surface is placed in the atmosphere, an electrically insulating oxide film is formed on the surface. Therefore, even if the probe is brought into contact with the electrode of the semiconductor, the two cannot be electrically connected to each other, and the inspection signal from the tester cannot be transmitted to the electrode with good efficiency through the probe. Therefore, the probe was previously brought into contact with the electrode under a predetermined needle pressure, and then the probe would scrub on the electrode surface. By this friction, the oxide film on the electrode surface will be peeled off, thereby ensuring the electrical conduction state between the probe and the electrode. [Summary of the Invention] As a subject (such as a semiconductor product) becomes more and more highly integrated, a layer formed on a semiconductor is also rapidly thinned, and an electrode thereof is also thinned. If the previous needle picking method 'makes the probe contact with a needle pressure that penetrates the oxide film on the electrode, the needle pressure from the probe will change the transistor characteristics-6- (2) (2) 200405013 Considerations. In addition, when a soft material such as a low dielectric material is provided on the lower layer of the electrode, there is a problem that a needle pressure cannot be applied to the probe. The present invention solves at least one of the problems mentioned above. According to the embodiment of the present invention, it is only necessary to bring the probe and the electrode into contact to improve the electrical conduction state therebetween. As a result, a probe method and a probe device capable of reliably performing a high-reliability inspection are provided. Other objects and advantages of the present invention are described in the following description, and a part of them is self-explanatory from the disclosure, or can be obtained by the practice of the present invention. The objects and advantages of the present invention can be realized by a combination of the means specifically mentioned herein. According to a first aspect of the present invention, there is provided a probe method for inspecting the electrical characteristics of a subject having at least one electrode using a probe device having at least one probe. The probe method has the following characteristics: (a ) Reducing the electrode of the subject; (b) bringing the electrode of the subject into contact with the probe; (c) applying a voltage to the probe to form a fritting phenomenon, which is formed by the voltage The electric melting phenomenon will cause the electrode and the probe to come into contact with each other in an electrically conducting state. The probe method is preferably provided with at least one of the following constitutions a) to f), or any plural combination of the constitutions a) to f). a) The reduction treatment of (a) includes heating the subject. b) The contact of (b) is to make two probes contact one electrode. c) The voltage of (c) used to cause the probe to become fused is provided by the driver of the tester circuit. (3) (3) 200405013 d) · The electrode of the subject contains copper or copper alloy. e) After the reduction treatment of (a), the surrounding of the subject is filled with a non-oxidizing atmosphere. 0. This electrofusion phenomenon is implemented by using relays to alternately switch two probes that contact each electrode. According to the second aspect of the present invention, a probe device can be provided which includes at least one probe and checks the electrical characteristics of a subject having at least one electrode. The probe device has the following mechanism: A mechanism in which the electrode has a reducing gas for reduction treatment; a mechanism for bringing the electrode of the subject into contact with the probe by promoting the movement of at least one of the subject and the probe; A power supply circuit for forming a voltage of an electric melting phenomenon, and the electric melting phenomenon caused by applying the voltage to the probe causes the electrode and the probe to contact in an electrically conducting state. The probe device is preferably provided with at least one of the following constitutions g) to k), or any plural combination of the emblems g) to k). g) • In the mechanism where the electrode of the subject is in contact with the probe, the probe that contacts one electrode of the subject is a pair of probes. h) The power supply circuit is provided with a power supply for applying a voltage between a pair of probes, a switching mechanism for switching the electrical connection between the power supply and the probes, and a controller that controls the switching operation of the switching mechanism. i) The probe device has a tester circuit, and the power source of the power supply circuit is the driver of the tester circuit. j) A mechanism for filling the surroundings of the subject after the reduction treatment with a non-oxidizing atmosphere. -8- (4) (4) 200405013 k) · It is equipped with a heating mechanism for heating the subject. l) The power supply circuit has a power supply for applying a voltage between a pair of probes, and a relay for electrically connecting the power supply and the probes to a switch. m) The pair of probes are each provided with its own wiring. [Embodiment] The object to be inspected by the probe method and the probe device of the present invention is not limited to a semiconductor. The probe method and probe device of the present invention can be used to check the electrical characteristics of a device directly formed on a semiconductor wafer, a single device cut out from a semiconductor wafer, an LCD, and the like. However, for the sake of easy understanding, the following describes the invention of the present invention by examining the electrical characteristics of a device formed on a semiconductor. Embodiments of the present invention will be described with reference to the embodiments shown in Figs. 1 to 8C. The probe method of the present invention uses a reducing gas (such as a forming gas) to reduce the oxide film formed on the wafer inspection electrode. After that, the fusing phenomenon is used to break through the oxide film on the electrodes to improve the electrical conduction between the probe and the electrodes. The reduction of the oxide film and the electric fusion phenomenon can reduce the needle pressure between the probe and the electrode (for example, almost zero). As a result, it is possible to extend the life of the probe without damaging the electrode. The electric melting phenomenon is the application of a voltage (such as a DC voltage) to an oxide film formed on the surface of a metal (electrode in the present invention), and a potential gradient of about 105 to 106 V / cm is formed in the oxide film, so that the current can Flow through the oxide film. The electric melting phenomenon is the phenomenon that the oxide film is destroyed by the current. The cause of this phenomenon can be thought of as the thickness of the oxide film and the heterogeneity of the metal composition (-9) (5) (5) 200405013, which can cause a current to flow through the oxide film. The probe device of this embodiment will be described below. The probe device 10 according to this embodiment is, for example, as shown in FIG. 1, and includes a runner chamber (not shown) for transporting an object to be processed (for example, a semiconductor wafer) W, and a probe chamber for inspecting electrical characteristics of the wafer W. 1 1 and a controller 3 1 (not shown) that controls the various machines that are configured. The runner room includes, for example, a mounting section for mounting a cassette containing 25 wafers W, and a wafer transfer mechanism for transferring wafers W one by one from the cassettes of the mounting section, and through the wafer transfer mechanism. The wafer transfer mechanism aligns the wafers in a predetermined direction during the wafer W transfer. The probe chamber 11 may include: a mounting table (for example, a main rotary disk) 1 3; and a moving mechanism 12 for moving the main rotary disk in three axes (X, Y, and Z axes); and a main rotary disk toward 0 0 driving mechanism (not shown) that rotates in the forward and reverse directions; and an electrode P (such as copper, copper alloy, aluminum, etc.) that is disposed above the main turntable 13 and contacts the wafer W by using an electrofusion phenomenon Made of conductive metal) probe card 1 4 for most probes; and an alignment mechanism (not shown) that aligns the probes of the probe card 14 with the position of wafer W; and The reduction processing means 15 for reducing the electrode P of the circle W. The reduction processing means 15 is to restore the electrode P of the wafer W on the main turntable 13. By using the electrofusion phenomenon, the probe can be brought into good electrical contact with the electrode P after the reduction treatment. Through this probe, the measurement signal from the tester can be sent to a device formed on the wafer W to check its electrical characteristics. The probe card 14 can be fixed to a probe plate 16 arranged on the upper part of the probe chamber 1 1. On the probe plate 16, the test head T and the probe card 14 can be arranged in a conductive connection with -10- (6) (6) 200405013. The moving mechanism 1 2 is disposed on the bottom surface of the probe chamber 11 as shown in the figure, and may include a γ stage 1 2 A that moves in the γ direction (the same as the vertical paper surface direction in the figure); On the platform 1 2 A, an X platform 12B moving in the X direction; and a z-axis mechanism 12C arranged on the X platform 12B and lifting in the Z direction. Furthermore, the main dial can be rotated clockwise and counterclockwise by the 0 drive mechanism with the central axis as the center. The moving mechanism 1 2 'shown in the figure is only an example' and is not limited thereto. The moving mechanism 12 may also be a mechanism using a linear motor principle, for example. The mounting table 13 can include a temperature adjustment mechanism having a temperature adjustment range of -55 ° C to 220 ° C. The probe card 14, as shown in Figs. 2A and 2B, has a main substrate 141, an intermediate substrate 142, a sub substrate 143, and a pair of probes 144 for one electrode. For example, the two probes 144 may have the same length as shown in Figs. 2A and 2B, or may have different lengths as shown in Figs. 3A and 3B. As shown in FIG. 3A, in the case where the length of the probe 144 is different, the probe contacts the electrode in two stages. That is, when an electrofusion phenomenon is caused, the wafer W is carried upward so that the two probes 144 contact the electrode P. When the electrical characteristics of the subject are to be inspected after the electrofusion phenomenon is caused, the wafer W is lowered, and the electrofusion probe 144 'is separated from the electrode, and the inspection probe 144 is in contact with the electrode P. As shown in FIG. 2B, the main substrate 141, the fusible link 1 4 1A, the relay circuit (such as a piezoelectric element) 1 4 1 B, the relay control line 1 4 1 C, and the signal line 1 4 1 D. The fused wires 1 4 1 A of the main substrate 1 4 1 and the relay control wires 1 4 1 C are connected to the fused circuit 1 46 through the cable connector 1 45. The signal line (integrated impedance 50 Ω) 141D can be connected to a device capable of measuring high-speed signals (so-called high-speed signal confirmation device) through a cable connector 147 (so-called high-speed signal confirmation device) 148. The fused circuit 146 may include an fused control circuit (not shown) 3 1A. The fused control circuit 31A can be set separately from the fused circuit 146. The fused control circuit 3 1 A, in addition to controlling the electrolysis circuit 1 46, can also control the relay circuit 1 4 1 B through the relay control line 1 4 1 C. The fused circuit can be designed to be controlled by the tester or the controller 31 of the probe device by connecting the probe device 10 (Figure 1). The intermediate substrate 142 and the sub-substrate 1 43 may include signal lines 1 4 2 A, 1 4 3 A, and ground lines 1 4 2 B, 1 4 3 B. The signal line 143 A and the ground line 143B of the sub substrate 1 4 3 are connected to the probe 144. Therefore, under the control of the fused control circuit 3 1 A, the fused circuit 1 4 6 drives the relay circuit 1 4 1 B through the relay control line 1 4 1 C. The relay circuit 1 4 1 B exerts the effect of a switch, and connects any one of the fused circuit 1 4 6 and the high-speed signal amplifier 14 · 8 to the probe 144. In FIG. 2B, 141E is a ground line formed in the main substrate 1 4 1. The operation of the electric fuse circuit 146 will be described below. (A) The two probes 14 4 of the probe card 14 contact the electrode p with a low needle pressure (for example, 1 mN or less). (b) The power source 146A applies a voltage to one of the probes 1 4 4 through a voltage application buffer amplifier 146A (Figs. 3 A and 3 B) and a current sensing impedance 1 4 6 B. At this time, when the oxide film on the electrode P is extremely thin, only a very small tunneling current passes. (C) As the voltage 4 from the power supply 146 A gradually increases, the potential gradient between the two picking pins 144 also gradually increases. When the potential gradient reaches a predetermined potential gradient (for example, 105 ~ 1 () 6V / cm left &) inch ', an electrofusion phenomenon occurs. Electrofusion will destroy the oxide film of the electrode, and the two probes 144 will contact the metal surface of the electrode P. As a result, the current 値 between the two -12- (8) (8) 200405013 probes 1 44 will increase sharply. The current measuring device 14 6C detects the current 値, and stops the application of the voltage from the power source 146A to prevent the current from exceeding the current 値. As a result, the two probes 144 and the electrode P are in good electrical contact. The main substrate 1 4 1 shown in FIG. 2B is provided with two relay circuits 1 4 1 B for one electrode P. Once the electrode density becomes higher, the number of relay circuits 1 4 1 B will increase dramatically. Therefore, for example, as shown in FIG. 4, by providing one relay circuit 1 4 1 B for one electrode P, the number of relay circuits 1 4 1 B can be halved. At this time, as shown in the figure, the electrode P 'other than the electrode P to be fused is connected to the signal line 1 4 1 D, and the predetermined electrode P is fused. As shown in Figure 5, the relay circuit can be omitted by connecting the driver 1 4 9 of the tester to the fuse 14 1 A. At this time, efficiency can be improved by integrating all the probes 1 44 for electric melting. The reduction treatment means 15 is, for example, a reduction treatment of an electrode P formed of copper, a copper alloy, or the like in a probe chamber 11 under normal pressure or reduced pressure. The reduction treatment means 15 may include, for example, as shown in FIG. 1, a heat-insulating container 15 A disposed on the probe plate 16 and a heater 15B inside the heat-insulating container 15 A, and connected to the heat-insulation. The supply pipe 15 C at the inlet of the container 15 and the gas supply means 15 D connected to the supply pipe 15 C for the formation gas (f omminggas), and the control means for controlling the flow rate of the formation gas from the gas supply means 15 D Flow controller 1 5 Η. The heater 15B in the heat-insulating container 15A is heated to form hydrogen in the gas to generate active hydrogen. Active hydrogen has a strong reducing power, which can effectively reduce the electrode of wafer W on the main turntable 13. The thermally insulated container 15 A may be formed of a heat-resistant material such as quartz or ceramic. -13- (9) (9) 200405013 The thermal insulation container 1 5 A can be provided with a thermal insulation structure. The heat-insulating structure prevents the temperature of the heater 15B from falling, and easily maintains the temperature in the heat-insulating container 15A at a predetermined high temperature. The gas outlet 15 i of the heat-insulating container 1 5 A can pass through the probe plate 16 at a position adjacent to the probe card 14 as shown in the figure, and be arranged face to face with the main turntable 13. The exhaust port ΠA provided in the probe chamber 11 can be connected to the exhaust device 1 5 j through the exhaust pipe 15E. The upper end of the moving mechanism 12 may be provided with an upper portion of the flat container 15F which is open and surrounds the main turntable 13. The container 15F can be formed to have a larger diameter than the main turntable 13. The large-diameter container 15F is filled with chemical gas supplied from the heat-insulating container 15 A, and becomes a reducing atmosphere. The gas outlet 15i of the heat-insulating container 15A can be installed at any place within the range that the main turntable 13 must pass. An example of a forming gas is a reducing gas. The formed gas can be a mixture of hydrogen and a diluent gas (for example, an inert gas such as nitrogen or an inert gas such as argon or helium). The hydrogen content of the formed gas can be adjusted within the range of prevention by the flow controller (for example, less than 5% by volume, specifically about 3%). The inner surface of the probe chamber 1 1 can be provided with a shielding member 1 5 G. By shielding the member 15G, the inside of the probe chamber 11 can be made more airtight, and a predetermined decompression state can be easily formed. An oxygen concentration meter 17 can be arranged inside and outside the probe chamber 11. With the oxygen concentration meter 17, the oxygen concentration inside and outside the probe chamber 1 can be monitored. Based on the measurement results of the oxygen concentration meter 17, an alarm means such as a bell can notify the event that the oxygen concentration reaches the concentration in the danger zone. In the probe device 10 shown in FIG. 1, the reduction treatment means 15 is arranged in series of -15- (10) 200405013 and is placed in the probe chamber. The reduction processing means 15 can be arranged (for example, in a runner room). Furthermore, the reduction processing means 15 and the needle device 10 are arranged as independent individuals. In addition, the reducing gas supplied by the gas supply means is heated and supplied to the subject, and the surface of the reducing electrode is oxidized in order to further increase the reducing effect of the reducing gas. An embodiment of the present needle method using the probe device 10 shown in Fig. 1 will be described below. In the probe chamber 11, the electrodes of the subject (device) w formed on the wafer W are aligned. The air supply means 1 5 D that discharges the air in the probe chamber 1 1 through the exhaust pipe 1 5 D supplies the formed gas to the heat insulation container. 5 a The heater 15B in the container 15A will heat the formed gas to heat the hydrogen gas. The formed gas is sent out from the wafer W on the injection port 15 i 13 of the thermally insulated container 15 A. The container 15F is filled with the formed gas, and a reducing atmosphere is formed in the 15F. The formed gas will contact the electrode p of the device formed on the wafer W placed on the wafer. The contact body can be heated by the heating means 3 3 in the main turntable 13 (for example, the temperature above is preferably 260 or even 300 ° C). The activated hydrogen in the formation gas that is in contact with the wafer W P will cause the atoms on the electrode to thin the oxide film on the electrode. After the reduction treatment, the formed gas is exhausted from the exhaust pipe 15 E to the outside of the probe chamber 11 from the container 5F through the inside g. In this operation, the air in the needle chamber 11 is not exhausted sufficiently, resulting in a high oxygen concentration. The probe can be used outdoors or without a membrane. In this case, the position of the probe 144 P of the detected invention can be simultaneously in the air. Thermal insulation activation. When the main turntable is full, before the container Ξ turntable 13, the electrode oxide film detected at 200 ° C or higher is still in the needle chamber 11. If the probe is set to -15- (11) (11) 200405013, it will be issued. alarm. In order to prevent the oxide film from being formed on the wafer w after the reduction treatment, by supplying the non-oxidizing gas (for example, nitrogen) to the wafer W through the tube 34 through the non-oxidizing gas supply means 35, the The wafer W is placed in a non-oxidizing atmosphere. See Figures 2A, 2B. In parallel with the reduction process, or after the reduction process, the moving mechanism 12 and the lifting mechanism move the probe 1 44 of the probe card 14 to the electrode of the wafer W at a low needle pressure. At this time, each electrode system is in contact with a plurality of (for example, two) probes 144. In addition, the fused circuit 146 is driven through the relay control line 1 4 1 C to drive the relay circuit 1 4 1 B. After the relay circuit 141B connects the electric fuse 141A and the probe 144, a predetermined voltage of the electric fuse circuit 146 is applied to the probe 144. In the case where the oxide film becomes extremely thin after reduction processing, initially, a tunneling current will pass between the probes 1 to 44. The tunneling current is a small current that is much smaller than the limiting current. The fused circuit 1 4 6 will detect this tiny current. After that, the applied voltage from the fused circuit 1 4 6 or the voltage gradually increases, and the potential gradient between the two probes 1 4 4 will gradually increase. Finally, an electric melting phenomenon occurs, which will break the oxide film of the electrode P, and the current between the two probes 144 will increase sharply. At this point in time, the application of the voltage is stopped. The two probes 1 4 4 are electrically connected to the electrodes P, respectively. As a result, a state in which the electrical characteristics of the subject can be inspected is established. Under the control of the fused control circuit, the relay circuit 1 4 1 B is driven through the relay control line 1 4 1 C. The relay circuit 1 4 1 B cuts off the probe 1 44 from the electric fuse 1 4 1 A and switches to the signal line 丨 4 1 D. This series of actions is performed entirely on the electrodes. Probe 1 44 is sequentially connected to the tester -16- (12) (12) 200405013 1 3 and inspection is started. As described above, the method of this embodiment includes reducing the electrode P of the wafer W using a chemical gas, bringing the electrode P into contact with the probe 144, and making the electrode P and the probe 1 4 4 by electrofusion. Electrical continuity. Therefore, the probe 144 and the electrode P can be brought into contact with each other at a very low needle pressure (for example, 1 mN or less), so that the two are electrically connected. As a result, even if the film-forming layer such as the underlayer of the electrode P is thinned, the needle pressure of the probe does not damage the underlayer, and the inspection can be performed stably and with high reliability. In this embodiment, the heater 15 activates hydrogen in the formed gas, and the activated hydrogen can reduce and remove the oxide film of the electrode P in a short time. By heating at least one of the formed gas and the wafer W, a reduction reaction is promoted, and the electrode can be reliably reduced. Regarding the Example In this example, the effects of the probe method of the present invention were confirmed while observing the oxidation and reduction phenomena of the copper film of the copper film wafer (copper film = 1 # m, TiN substrate = 1 5 nm). . Example 1 In this example, a copper film wafer sample S 2 was used in the electric fusion characteristic measuring device 200 shown in FIG. 6 to evaluate the electric fusion conductive characteristics. The electric melting characteristic measuring device 200 is provided with a probe card having 70 tungsten probes 201, 202, and 203, and electric power connected to the probe card through switches s W 1 to SW 3 0 constituting a relay scanner. Fusion power source 204, and current meter 205 for measuring the electricity passing through the probe -17- (13) (13) 200405013 current meter 205, and voltmeter for measuring the voltage between the probe and the electrode 2 0 6. 7 0 probe The 60 needles are used as 30 pairs of electric melting probes 20 1, 202. The remaining 10 probes were used as a voltage measurement probe 203 for connecting a copper electrode (film) on the copper film crystal sample S 2 to a voltmeter 206. A digital analog (AD) converter (not shown) is connected between A-A ', B-C, and B-D. The digital analog (AD) converter monitors the current and voltage changes during fused. By moving the XYZ stage (not shown) on which the copper film wafer sample S2 is placed, the contact position and contact force of the probe can be changed. The evaluation experiment using the electrofusion characteristic measuring device 2000 was performed in the following manner. 1) By moving the copper film wafer sample S2 to a desired position, the probes 20 1, 202, and 20 03 are brought into mechanical contact with the copper film wafer sample S2. 2) The switches S W 1 to S W 3 0 constituting the relay scanner are set to a voltage from the power source 204 when the switches are fully open. 3) Only switch SW 1 is closed. An electric fusion phenomenon is caused by applying a voltage from the power source 204 between a pair of electric welding contact probes 201 and 202 connected to the switch SW1. Next, after the switch SW1 is turned on, and only the switch SW2 is turned off, as in the above-mentioned case, between the probes 201 and 202 for electric welding points connected to one of the switches SW2, the The voltage 'of the power source 204 causes an electrofusion phenomenon. In the following, the switches SW3 to 30 are switched in the same manner to cause an electric melting phenomenon between each of the 30 pairs of probes. -18- (14) 200405013 4) The set voltage of the power supply 204 is switched to a low voltage for impedance measurement. 5) As in the case of d 3) above, by sequentially switching the connection to SW 30, the impedance of 30 pairs of probes 2 0 1 and 2 0 2 is measured. In addition to the contact impedance, the impedance measured at this time is the impedance connecting the probes 201 and 202 to the wiring of the power source 204. Therefore, the impedance is subtracted from the impedance (approximately 0.7 Q in actual measurement) to make contact. impedance. The copper film wafer sample S2 is a sample prepared by sputtering copper metal and vaporized and stored in the atmosphere. After performing hydrogen treatment under the following reduction treatment conditions and cooling in a vacuum for 10 minutes, the sample is taken out of the atmosphere and the temperature of the atmosphere is measured. It is 20 ~ 2 2 ° C, the relative temperature is 23%. [Reduction treatment conditions] Reducing gas: Hydrogen gas flow rate: 3 00 ml / min Hydrogen pressure: 130 Pa Sample temperature during processing: 4 0 0 K, 6 2 0 K Figures 7A-7C and Figures 8A-8C are shown The contact force of the 7A to 7C series probes after the hydrogen reduction time and the contact resistance (average 値) after the electric melting phenomenon is set to lmN. FIG. 8A is a case where the contact force of the probe is set to 5 mN. In all of the conditions shown in Figs. 7A to 7C and the figure, the resistance between the SW1 and the test sample, which were not stored in the atmosphere, was set to include the sample after reduction and the sample after reduction. I 20 ~. Atmospheric storm. Figure ～ 8 C series 8A ～ 8C > Hydrogen reduction -19- (15) 200405013 The contact resistance becomes lower when compared with the case of direct use (dotted line). In addition, the dew time after hydrogen reduction will increase the contact resistance. In the case of 100 to 300, the contact resistance is almost as expected. This is because the atmosphere tested by atmospheric exposure showed a return to the original oxidation state from 100 to 300 minutes. In other words, a low contact impedance can be obtained by performing a probe measurement within 30 minutes. Then, once the probe is exposed to the atmosphere, the contact resistance during the inspection can be 5 Ω or more in the bar without hydrogen reduction treatment (V = 0.5V) and low load (F = lmN). After the sample is subjected to hydrogen reduction treatment, it has a low contact resistance of 20 to 30 minutes under low voltage and low load. It can be known from FIG. 7C (V = 10V) that the contact resistance is low at a low load (F = lmN). In addition, by applying a hydrogen pre-treatment, a low voltage (V = reactance can be obtained. In other words, if a combination of electrofusion and hydrogen reduction before mechanical or electrical probe measurement is used. In addition, the present invention is not limited to The above-mentioned reduction processing means can be used instead of hydrogen as shown in Figure 2. It can be appropriately used without wafers. The reduction processing of the wafer can be the ratio of the inside of the cassette to the case of hydrogen reduction. With the atmospheric storm, the exposure in the atmosphere returned to the result of reoxidation without hydrogen reduction. The actual exposure will cause the sample to be brought by the hydrogen reduction treatment lock after the hydrogen reduction treatment. The impedance is maintained at a low impedance. Under the circumstances, the contact resistance of 5 under the low voltage part becomes the case, even about 1 Ω can be obtained even in the atmosphere, if the fused voltage is increased, about 1 Ω can still be obtained. Try low contact resistance treatment at 0.5 V) to achieve low damage and implementation. For example, various forms other than the crystal structure. The reducing gas that caused the damage was carried out overnight. The above -20- (16) (16) 200405013 Although the subject in the embodiment uses the wafer W, the present invention can also be applied to packages other than wafers or substrates for LCDs. According to the embodiment of the present invention, a probe method and a probe device can be provided, and the probe and the inspection electrode can be contacted to ensure that they are electrically connected to each other, and a highly reliable inspection can be performed on the ground. . More features and changes can be considered by those in the technical field. Therefore, the present invention belongs to a more macro perspective, and is not limited to the specific detailed description and the representative embodiments disclosed in this specification. Therefore, as long as it is within the scope of the interpretation of the broad invention concept and equivalents defined in the scope of the attached patent application without departing from this, various changes can be made. [Brief description of the drawings] FIG. 1 is a sectional view of an embodiment of a probe device according to the present invention. Figs. 2A and 2B show the probe card shown in Fig. 1, Fig. 2A is an exploded side view thereof, and Fig. 2B is a block diagram thereof. Figs. 3A and 3B are diagrams showing movements when the two probes are different in length. Fig. '0 3 Α τη Side view during electrolysis operation' Fig. 3B is a side view during probe inspection operation. Fig. 4 is a block diagram of the main parts of a probe card used in another embodiment of the present invention. Fig. 5 is a main block diagram of a probe card used in still another embodiment of the present invention. Fig. 6 is a schematic diagram of the 熔-21-(17) (17) 200405013 of the electric melting characteristic measuring device used in the embodiment of the present invention. Fig. 7A to 7C is a graph showing the relationship between the exposure time of the copper film wafer samples to the atmosphere after reduction and the contact resistance 値 after the electrofusion. Fig. 8 is a graph showing the relationship between the time of exposure to atmospheric air after reduction of A-C copper film wafer samples and the contact resistance 値 after the electrofusion. Main components comparison table 10 Probe device 11 Probe chamber 12 Moving mechanism 1 2 A γ platform 1 2B X platform 1 2C z-axis mechanism 13 Main turntable 14 Probe card 14 1 Main base plate 1 4 1 A Electric fuse 1 4 1 B Relay circuit 1 4 1 C Relay control line 1 4 1 D Signal line 142 Intermediate base plate 1 42A Signal line 142B Ground line 143 Sub-board-22- (18) 200405013 143 A Signal line 143B Ground line 144 Probe 145 Cable connection 146 Electrical fuse circuit 147 Cable connector 148 High-speed signal checking equipment
149 驅動器 15 還原處理手段 15A 隔熱容器 1 5B 加熱器 15C 供給管 15D 氣體供給手段 1 5 E 排氣管 1 5F 容器149 Driver 15 Reduction treatment means 15A Insulated container 1 5B Heater 15C Supply pipe 15D Gas supply means 1 5 E Exhaust pipe 1 5F Container
1 5 Η 流量控制器 1 5 i 氣體噴出口 1 5j 排氣裝置 16 探頭平板 17 氧濃度計 200 電熔特性測定裝置 201 電熔用探針 202 電熔用探針 -23- (19) 200405013 203 電 壓 測 204 電 熔 用 3 1 控 制 器 勹 〇 加 熱 手 35 非 氧 化 P 電 極 T 測 試 儀 W 晶 圓 S2 銅 膜 晶 S W 1〜 3 0開 關 定用探針 電源 段 性氣體供給手段 電路 圓試料 -24-1 5 Η Flow controller 1 5 i Gas outlet 1 5j Exhaust device 16 Probe plate 17 Oxygen concentration meter 200 Electrofusion characteristic measurement device 201 Electrofusion probe 202 Electrofusion probe-23- (19) 200405013 203 Voltage measurement 204 For electric melting 3 1 Controller 勹 〇Heating hand 35 Non-oxidized P electrode T Tester W Wafer S2 Copper film crystal SW 1 ~ 3 0 Switch setting probe power supply Segmental gas supply means Circuit round sample-24 -