1314213 九、發明說明： 【發明所屬之技術領域】 本發明係關於用於與被檢查體接觸而檢杳 氣特性之探針、探針卡及探針裝置。—檢—體之電 【先前技術】 例如，在半導體晶圓上形成之1C、LSI等之電子電路之 電氣特性之檢查’藉由將設置於探針裝置之探針向晶圓側 之電子電路之電極按壓使其接觸而進行。 上述之探針，因為有必要磨削電極表面之氧化膜，故在 先前之探針之材質上，採用了鎢和鎳等強度強之金屬，從 而使其能夠耐受多次檢查（參照專利文獻〇。 [專矛!文獻1]曰本專利公開2〇〇5_ι〇6497號公報 <疋在電氣特性之檢查上，探針之接觸部從晶圓側之 電極拉離時，晶圓側之電極之一部分剝離而附著於探針之 接觸部。因此，藉由進行多次之檢查，在探針之接觸部堆 積附著物，從而在探針與電極之間有產生電氣接觸不良之 慮。因此，有必要在短時間内更換探針，並用刷子去除堆 積之附著物，探針之壽命隨之縮短。 是近年來’ 4 了降低探針與電極之接觸壓力，建議 向與電極接觸之探針施加電壓，並利用溶結現象，絕緣破 壞電極表面之氧化膜，謀求探針與電極之導通之技術。該 情形下，在探針與電極之間產生溶敷所致之較強黏著力之 事實得以確認，在探針與電極被拉離時，藉由當時之拉伸 〜力t極之-部分斷裂缺損，容易附著在探針之接觸 116851 .doc 1314213 部。因此，特別在採用熔 附荽榀^ B. 又町疋脣形下，在探針上堆積 附者物，谷易產生探針與電極之接觸不良。 本發明係#於以上諸點所完成者，其 圓等被檢查體侧之接觸部分之 ^防止曰曰 接觸部。 ”之彳刀剝離，附著於探針之 【發明内容】 产杳、述目的之本發明，係用於與被檢查體接觸並 := 電氣特性之探針，其特徵在於與被檢查體 =接㈣之至少表面’由比被檢查體側之接觸部分強 質所形成。另，所謂強度弱之材質為較小之應力 下可斷裂之材質。 根據本發明’由於探針之接觸部之表面比被檢查體側之 接觸部分強度弱，故在黏著之探針與被檢查體分離時，探 狀接觸部侧斷裂並咖。該情形下，探針上不會堆積附 =物’並且’因為探針之新面經常露出，㈣使多次使用 探針，亦可維持與被檢查體之穩定接觸。其結果，例如不 需要探針之清潔作業，可延長探針之壽命。 ^述接觸部之表面’由上述強度弱之材質形成；上述接 觸。Ρ之表面之内側部分，由比上述被檢查體側之接觸部分 強度強之材質形成亦可。 上述接觸部之上述強度弱之材質為錫或含有錫之合金亦 可。 上述探針亦可為利用熔結現象在與被檢查體側之接觸部 分電氣導通時使用者。 116851 .doc 1314213 根據藉由其他觀點之本發明’提供包含上述探針之探針 卡。 藉由其他觀點之本發明，其係包含用於與被檢查體相接 觸而檢查被檢查體之電氣特性之探針之探針裝置，其特徵 為.具有貯存比與探針接觸之被檢查體側之接觸部分強度 弱之材料之熔融物之容器；與為了能夠將與上述被檢查^ 相接觸之探針之接觸部浸人於上述容器内之熔融物中，而 使上述容器移動之移動機構，·上述探針之接觸部之至少表 面，由比上述被檢查體侧之接觸部分強度弱之材質所形 成。 根據本發明，由於探針之接觸部表面比被檢查體側之接 觸部分強度弱，故在黏著之探針與被檢查體分離時，探針 之接觸部側斷裂並剝離。因此，探針上不會堆積附著物， 亚且’由於探針之新面露出，即❹錢用探針，亦可維 =被檢查體之穩定接觸。藉此，例如不需要探針之清潔 觸部读還可ΐ長探針之壽命。並且，由於㈣將探針之接 雜久入於谷器之熔融物中，從而可補充和恢復接觸部之 二離之部分。藉此’可更加延長探針之壽命。此外，因為 定針之接觸部表面形狀敎，故與被檢查體之接觸更加穩 上述容器之加熱構件。 溶結現象電氣導通被檢 查體[Technical Field] The present invention relates to a probe, a probe card, and a probe device for detecting helium characteristics in contact with an object to be inspected. - Detecting the power of the body [Prior Art] For example, the inspection of the electrical characteristics of an electronic circuit such as 1C or LSI formed on a semiconductor wafer 'by placing the probe provided on the probe device toward the electronic circuit on the wafer side The electrode is pressed and brought into contact with each other. In the above probe, since it is necessary to grind the oxide film on the surface of the electrode, a strong metal such as tungsten or nickel is used for the material of the previous probe, so that it can withstand multiple inspections (refer to the patent literature).专 [Special spear! Document 1] 专利 Patent Publication 2〇〇5_ι〇6497号<疋In the inspection of electrical characteristics, when the contact portion of the probe is pulled away from the electrode on the wafer side, the wafer side One of the electrodes is partially peeled off and adhered to the contact portion of the probe. Therefore, by performing a plurality of inspections, deposits are deposited on the contact portion of the probe, which causes electrical contact failure between the probe and the electrode. It is necessary to change the probe in a short time, and remove the accumulated deposit with a brush, and the life of the probe is shortened. In recent years, the contact pressure between the probe and the electrode is lowered, and it is recommended to contact the probe with the electrode. Applying a voltage and using a dissolution phenomenon, the insulation destroys the oxide film on the surface of the electrode, and the technique of conducting the probe and the electrode is achieved. In this case, the fact that a strong adhesion due to dissolution is generated between the probe and the electrode is obtained. It is confirmed that when the probe and the electrode are pulled apart, it is easy to adhere to the probe contact 116851.doc 1314213 by the stretching-force t-part-part break defect at that time. Therefore, especially in the case of melting榀^ B. In the lip shape of the town, the attached object is deposited on the probe, and the valley is liable to cause poor contact between the probe and the electrode. The present invention is completed by the above points, and the side of the object to be inspected The contact portion of the contact portion prevents the contact portion of the crucible. "The blade is peeled off and attached to the probe." [Invention] The present invention for producing and describing the object is used for contact with the object to be inspected and: = electrical characteristics The needle is characterized in that at least the surface ' of the object to be inspected (four) is formed by a stronger portion than the contact portion on the side of the object to be inspected. Further, the material having a weak strength is a material that can be broken under a small stress. 'Because the surface of the contact portion of the probe is weaker than the contact portion on the side of the object to be inspected, when the probe to be adhered is separated from the object to be inspected, the side of the probe-like contact portion is broken. In this case, the probe does not Will accumulate attached = and 'because' probe The new surface is often exposed. (4) The probe can be used multiple times, and the stable contact with the object to be inspected can be maintained. As a result, for example, the cleaning operation of the probe is not required, and the life of the probe can be prolonged. The material is formed by a material having a weak strength; and the inner portion of the surface of the contact is formed of a material having a stronger strength than a contact portion on the side of the object to be inspected. The material having a weak strength of the contact portion is tin or contains tin. The above-mentioned probe may also be a user who is electrically connected to a contact portion on the side of the object to be inspected by a sintering phenomenon. 116851 .doc 1314213 Providing a probe including the above probe according to the present invention by other viewpoints The present invention, which is a probe device comprising a probe for inspecting the electrical characteristics of the object to be inspected in contact with the object to be inspected, characterized in that it has a storage ratio in contact with the probe. a container for inspecting a molten material of a material having a weak contact portion on the body side; and a melting portion for immersing the contact portion of the probe in contact with the above-mentioned inspected body in the container Was, and that the movement of the moving mechanism of the container, - at least the surface of the contact portion of the probe, as described above are formed by the weak side of the inspection portion of the contact material strength ratio. According to the present invention, since the surface of the contact portion of the probe is weaker than the contact portion on the side of the object to be inspected, when the probe to be adhered is separated from the object to be inspected, the contact portion side of the probe is broken and peeled off. Therefore, no deposits are deposited on the probe, and the new surface of the probe is exposed, that is, the probe for the money is used, and the contact of the object to be inspected is also stable. Thereby, for example, cleaning of the probe without the need for a probe can also lengthen the life of the probe. Moreover, since (4) the probe is mixed for a long time into the melt of the trough, the two portions of the contact portion can be replenished and restored. By this, the life of the probe can be further extended. Further, since the shape of the contact portion of the fixed needle is 敎, the contact with the object to be inspected is more stable to the heating member of the container. Dissolution phenomenon, electrical conduction, inspected body
上述探针裝置亦可具有加熱 上述探针装置亦可具有利用 與探針之熔結功能。 【實施方式】 】16851.doc 1314213 根據本發明，不再需要探針之清潔，還可延長探針之壽 命。並且’由於能夠形成穩定之低電阻之接觸點，故可以 穩定電氣特性之檢查精度。 、下關於本發明之理想實施形態進行説明。圖1為顯 不本實施形態之探針裝置1之構成之概略説明圖。 例如’探針裝置丨包含探針卡2、載置作為被檢查體之晶 圓w之載置台3、以及能夠移動載置台3之移動機構4。The probe device may also have heating. The probe device may also have a function of sintering with a probe. [Embodiment] 16851.doc 1314213 According to the present invention, the cleaning of the probe is no longer required, and the life of the probe can be extended. Further, since a stable low-resistance contact point can be formed, the inspection accuracy of the electrical characteristics can be stabilized. Next, a preferred embodiment of the present invention will be described. Fig. 1 is a schematic explanatory view showing the configuration of the probe device 1 of the present embodiment. For example, the probe device 丨 includes a probe card 2, a mounting table 3 on which a wafer w as a test object is placed, and a moving mechanism 4 capable of moving the mounting table 3.
例如’探針卡2包含於下面支樓與晶圓W之電極相接觸 之複數之探針10之接觸器11、和相對探針10而收發接觸器 11之本體之電氣信號之印刷電路基板12。例如，接觸器u 、P刷電路基板12形成為略圓盤狀，印刷電路基板12配置 在接觸益11之上面側，可與接觸器u通電。 σ，探針1G接合於在接觸μ本體之下面形成之接 例如，如圖2所示，探針1〇藉由直線狀之樑部 和在該樑部30之前端部向直角方向突出之接觸部”而 /、有略L型形狀。樑部3〇之後端侧接合於接續端 0接觸部31在樑部3〇之前端向下側突出。該接觸部η 4為曰曰圓W之接觸部分之電極Ρ相接觸。 "叶0為例如一體成型’全體之晶圓w之電極p由強 比紹弱之導電性材料 例如錫所形成。例如，探針10之. 選擇拉伸強度比電極P小l〇Mpa以上者。 1〇ί ^ ^ U本體之内部形成有電氣連接下面側之各探: 電路基板12之未圖示之接續配線。 歹'如’如圖3所示，探針10，對於為產生熔結現象而對 116851.doc 1314213 根一組之探針10施加電壓之熔結電路41，經由切換測試電 路40與熔結電路41之開關電路42而連接於收發用於檢查電 軋特f生之電托號之測試電路。在此，所謂炫結現象為若 向電極p之表面施加之電位傾度為1〇5〜1〇6v/cm左右，則電 極P之表面之氧化膜被絕緣破壞，電流藉由氧化膜而流動 之現象。熔結電路41，在與晶圓w之電極p相接觸之2根一 組之探針1G之間施加特定之電壓，並藉由提高2根探針 間之電位傾度，在2根探針10與電極p之兩處之接觸部上， 同時絕緣破壞電極P之表面之氧化膜，從而可電氣導通電 極P與探針1G。另，在本實施形態中，藉由炼結電路Μ 現嫁結功能β 例如，如圖1所示，移動機構4由從下方支撐載置台3之 水平支持台5G、和升降水平支持台5G之氣缸等升降驅動部 51、以及向水平方向之X方向與γ方向之2個方向移動升降 驅動部50之Χ-Υ平台52所構成。藉此，三維移動載置於載For example, the probe card 2 includes a contactor 11 of a plurality of probes 10 that are in contact with the electrodes of the wafer W in the lower branch, and a printed circuit board 12 that transmits and receives electrical signals of the body of the contactor 11 with respect to the probe 10 . For example, the contactor u and the P-brush circuit board 12 are formed in a substantially disk shape, and the printed circuit board 12 is disposed on the upper side of the contact benefit 11, and can be energized with the contactor u. σ, the probe 1G is bonded to the contact formed under the contact μ body. For example, as shown in FIG. 2, the probe 1 is protruded in a right angle direction by a straight beam portion and a front end portion of the beam portion 30. The portion "" has a slightly L-shaped shape. The end portion of the beam portion 3 is joined to the joint end 0. The contact portion 31 protrudes to the lower side of the front end of the beam portion 3. The contact portion η 4 is the contact of the circle W Some of the electrodes are in contact with each other. "Leaf 0 is, for example, integrally formed. The electrode p of the entire wafer w is formed of a strong conductive material such as tin. For example, the probe 10 is selected. The electrode P is small or smaller than Mpa. 1〇ί ^ ^ The inside of the U body is formed with electrical connections on the lower side of the probe: a connection wiring (not shown) of the circuit board 12. 歹 '如' as shown in Fig. 3 The pin 10 is connected to the transceiving circuit 41 for applying a voltage to the probe 10 of the 116851.doc 1314213 group for generating a sintering phenomenon, and is connected to the transceiving circuit 42 via the switching test circuit 40 and the switching circuit 42 of the fusing circuit 41. Inspect the test circuit of the electric lead number of the electric rolling special. Here, the so-called dazzling phenomenon is to the electrode p When the potential gradient applied to the surface is about 1 〇 5 to 1 〇 6 v/cm, the oxide film on the surface of the electrode P is broken by insulation, and the current flows through the oxide film. The fusion splicing circuit 41 is on the wafer w A specific voltage is applied between the probes 1G of the two sets in which the electrodes p are in contact with each other, and by increasing the potential tilt between the two probes, at the contact portions of the two probes 10 and the electrode p, At the same time, the oxide film on the surface of the electrode P is insulated and insulated, so that the electrode P and the probe 1G can be electrically conducted. Further, in the present embodiment, the bonding function β is formed by the refining circuit, for example, as shown in FIG. The mechanism 4 is configured such that the horizontal support 5G supporting the stage 3 and the elevation drive unit 51 such as the cylinder of the elevation horizontal support 5G and the elevation drive unit 50 are moved in the X direction and the γ direction in the horizontal direction. - a platform 52 is constructed. Thereby, the three-dimensional movement is carried
置台3之晶圓W，從而可以使探針1〇接觸於晶圓w之所欲電 極Ρ。 +例如，在水平支持台50上之載置台3旁邊，設置有内置 藉由供電而發熱之加熱器60之作為加熱構件之熱板61。如 、圖，示’在該熱板61上設置有貯存探針10之構成材料即 ^融錫Α之容器62。容器62内之溶融錫Α藉由熱板61之熱 罝可維持熔融狀態。並且，因為容器62被載置於與載置台 相同之水平支持台50上’故可藉由移動機構4三維移動， 攸而可將探針H)之接觸部31浸入於容器62内之溶融錫A 11685 l.d〇c •10- 1314213 中。藉此，可將錫附著於探針10之接觸部31上。The wafer W of the wafer 3 is placed so that the probe 1 is brought into contact with the desired electrode 晶圆 of the wafer w. + For example, a hot plate 61 as a heating member that incorporates a heater 60 that generates heat by power supply is provided beside the stage 3 on the horizontal support table 50. As shown in the figure, the hot plate 61 is provided with a container 62 which is a constituent material of the storage probe 10. The molten tin in the container 62 can be maintained in a molten state by the heat of the hot plate 61. Further, since the container 62 is placed on the same horizontal support table 50 as the mounting table, the contact portion 31 of the probe H) can be immersed in the molten tin in the container 62 by the three-dimensional movement of the moving mechanism 4. A 11685 ld〇c •10-1314213. Thereby, tin can be attached to the contact portion 31 of the probe 10.
下面’與晶圓W之檢查步驟一同説明上述之探針農置1 之作用。首先，在載置台3上載置晶圓W。其次，藉由移 動機構4三維移動晶圓W ’如圖5所示，在晶圓w之各電極 P上各接觸兩根探針10。此時，電極p與探針1〇以極低之接 觸壓相接觸。然後’利用熔結電路41向各電極p之兩根探 針10之間施加電壓。慢慢提升該電壓，使探針1〇間之電位 傾度大，藉此，產生熔結現象，從而絕緣破壞電極p表 面之氧化膜（熔結處理）。這樣，探針1〇與電極p之間之電 阻變小，探針10與電極p電氣導通。 全部電極P與探針10電氣導通之後，藉由開關電路42， 從熔結電路41切換成測試電路40。接著，利用測試電路 4〇,電氣信號從各探針10傳送至電極p，從而檢查晶圓w 之電子元件之電氣特性。 曰曰圓W藉由移動機構4而下 電氣特性之檢查結束之後 降，從而探針1〇離開電極Ρβ在進行上述之熔結處理之惰 形下探針10與電極Ρ之黏著力變大。這被認為是由於在 熔結處理時在冑針1{)與電極Ρ之間之狹小接觸領域暫時性 地流動高壓電流，而熔著探針10與電極Ρ。並且，在探針 10從電極Ρ被拉離時，對探針1G與電極ρ之拉伸應力發揮作 用。因為探針10形成為其強度比電極P弱，故如圖⑽）所 示，從探針10與電極P相接觸之狀態，如圖6(b)所示，若 拉離探針1G與電極P’則探針1G之接觸部31表面之一部分 斷裂剝離’附著於電極ρ上。 M685I.doc 1314213 然後，晶®W從探針裝置1移出。並且，以上之檢查步 驟重硬特定次數之後，根據需要，容器62藉由移動機構4 水平移動至探針10之下方，然後上升，如圖4所示，探針 1〇之接觸部31浸入於容器62内之熔融錫A中。如此，向探 針1〇之接觸部31之缺損部分補充錫，恢復探針1〇之表面: 狀。 v 根據以上之實施形態，因為探針10由比晶圓W之電極p 強度更弱之錫形成’故在拉離探針10與電極P時，探針10 側斷裂並剝離。藉此，電極P之—部分不會附著於探針10 側並堆積’因為露出探針1G之新面，故即使多次使用探針 1㈣可維持探針1〇與電極P之接觸。從而，可延長探針1〇 之壽命。並且，因為在探針10上不堆積附著物，故可穩定 探針10對電極P之接觸。 〜 在以上之實施形態，因為利用溶結現象而謀求探針⑽ 電極P之電氣導通’故被認為在探針10與電極P之間發生熔 著。因此，在拉離時’需要比較大之力量。因此，採用強 度比電極P弱之材質形成用於炼結處理之探針丨G，促使探 針_之斷裂’在防止電極P之一部分附著於探針1〇 常有效。 以上之實施形態中，因為在探針裝置丨上設置了貯存有 炫融錫A之容器62 ’故可將探針1〇浸入於容器62内之炫融 錫A中’從而補充探針10之缺損部分。藉此，因為可維持 探針10之形狀，故可更加延長探針1〇之壽命。 因為容器62載置於熱板61上，故可將容器62内之溶融錫 *16851.do- -12· 1314213 A維持在熔融狀態。 β在以上之實施形態中，探針10之全部藉由錫而形成，作 是僅探針10之接觸部31之表面藉由強度比電極ρ弱之錫: ^，該接觸部31表面之内側部分藉由強度比電極ρ強之= 貝，例如鎳或鎢等形成亦可。例如，如圖7所示，探針1 〇 之本體10a藉由鎳（Ni)形成，在探針1〇之接觸部31表面 上被覆錫膜。例如’表面10b之錫以1〇·4〜〇 〇1爪 译二潘# 石之厚 又而覆盍。根據該例，因為探針1〇之本體1〇a藉由強度強 之材質形成，故可確保探針1〇全體之強度，例如不會2與 電極p之接觸而變形。並且，因為僅接觸部31之表面由錫 覆蓋，且因拉離時之缺損僅在接觸部31之表面進行，故在 電極p側亦不會附著大塊錫。另，探針1〇之本體心全體 (樑部30與接觸部31)藉由上述高強度之材質形成亦可，且 僅接觸部31藉由高強度之材質形成亦可。 以上’―邊參照附圖-邊說明本發明之理想實施形態， 但本發明並不僅限於以上例子。凡熟悉該項技藝者，在專 利申凊之批圍所揭示之思想範,内H確地符合各種變 更例或修正例’對該等也當然被理解成屬於本發明之技術 範圍’，在以上之實施形態中，作為強度比電極P弱 之材質採用了@，但也可以採用含㈣之合金或錫焊料等 其=材料。在以上之實施形態中’在進行料處理時使用 之探針上應用了本發明’但是本發明亦可應用於在不進行 溶結處理之檢查上使用之探針上。本發明亦可適用於被檢 查體為晶圓w以外之FPD(平板顯示器）' 光罩用之光罩標The function of the above-described probe farm 1 will be described below along with the inspection step of the wafer W. First, the wafer W is placed on the mounting table 3. Next, the wafer W is moved three-dimensionally by the moving mechanism 4 as shown in Fig. 5, and each of the probes 10 is contacted on each of the electrodes P of the wafer w. At this time, the electrode p is in contact with the probe 1〇 at a very low contact pressure. Then, a voltage is applied between the two probes 10 of the respective electrodes p by the fusion bonding circuit 41. This voltage is gradually increased to make the potential of the probe 1 turn large, whereby a sintering phenomenon occurs, and the oxide film (sintering treatment) on the surface of the electrode p is broken by the insulation. Thus, the resistance between the probe 1 and the electrode p becomes small, and the probe 10 and the electrode p are electrically conducted. After all the electrodes P are electrically connected to the probe 10, they are switched from the fuse circuit 41 to the test circuit 40 by the switch circuit 42. Next, using the test circuit 4, an electrical signal is transmitted from each probe 10 to the electrode p, thereby inspecting the electrical characteristics of the electronic components of the wafer w. The roundness W is lowered by the inspection of the electrical characteristics of the moving mechanism 4, and the probe 1 is separated from the electrode Ρβ. The adhesive force of the probe 10 and the electrode 变 is increased in the inert state in which the above-described sintering treatment is performed. This is considered to be due to the temporary flow of a high-voltage current in the narrow contact area between the 1 pin 1{) and the electrode 在 during the sintering process, while the probe 10 and the electrode 熔 are fused. Further, when the probe 10 is pulled away from the electrode ,, the tensile stress of the probe 1G and the electrode ρ functions. Since the probe 10 is formed to have a lower intensity than the electrode P, as shown in (10), the probe 10 is in contact with the electrode P, as shown in FIG. 6(b), if the probe 1G and the electrode are pulled apart. P' is that a part of the surface of the contact portion 31 of the probe 1G is broken and peeled 'attached to the electrode ρ. M685I.doc 1314213 Then, the crystal® W is removed from the probe device 1. Further, after the above inspection step is hardened for a specific number of times, the container 62 is horizontally moved to the lower side of the probe 10 by the moving mechanism 4 as needed, and then raised, as shown in Fig. 4, the contact portion 31 of the probe 1 is immersed in In the molten tin A in the container 62. In this manner, the defective portion of the contact portion 31 of the probe 1 is replenished with tin, and the surface of the probe 1 is restored. v According to the above embodiment, since the probe 10 is formed of tin which is weaker than the electrode p of the wafer W, when the probe 10 and the electrode P are pulled apart, the probe 10 side is broken and peeled off. Thereby, the portion of the electrode P does not adhere to the probe 10 side and is deposited. Since the new surface of the probe 1G is exposed, the probe 1A and the electrode P can be maintained in contact even if the probe 1 (4) is used a plurality of times. Thereby, the life of the probe 1 可 can be extended. Further, since the deposit is not deposited on the probe 10, the contact of the probe 10 with the electrode P can be stabilized. In the above embodiment, the probe (10) electrode P is electrically connected by the dissolution phenomenon, so that it is considered that fusion occurs between the probe 10 and the electrode P. Therefore, when pulling away, you need a relatively large force. Therefore, the probe 丨G for the refining treatment is formed using a material whose strength is weaker than the electrode P, and the rupture of the probe _ is prevented from being attached to the probe 1 by a part of the electrode P. In the above embodiment, since the container 62' in which the molten tin A is stored is provided on the probe device, the probe 1〇 can be immersed in the molten tin A in the container 62 to replenish the probe 10. Defective part. Thereby, since the shape of the probe 10 can be maintained, the life of the probe 1 can be further extended. Since the container 62 is placed on the hot plate 61, the molten tin *16851.do--12· 1314213 A in the container 62 can be maintained in a molten state. In the above embodiment, all of the probe 10 is formed of tin, so that only the surface of the contact portion 31 of the probe 10 is weaker than the electrode ρ: ^, the inner side of the surface of the contact portion 31 Part of it may be formed by a stronger than the electrode ρ, such as nickel or tungsten. For example, as shown in Fig. 7, the body 10a of the probe 1 is formed of nickel (Ni), and a tin film is coated on the surface of the contact portion 31 of the probe 1A. For example, the tin of the surface 10b is 1〇·4~〇 〇1 claws. According to this example, since the body 1A of the probe 1 is formed of a material having high strength, the strength of the probe 1 is ensured as a whole, and for example, it is not deformed by contact with the electrode p. Further, since only the surface of the contact portion 31 is covered with tin, and the defect at the time of pulling away is performed only on the surface of the contact portion 31, a large amount of tin is not adhered to the electrode p side. Further, the entire body of the probe 1 (the beam portion 30 and the contact portion 31) may be formed of the above-described high-strength material, and only the contact portion 31 may be formed of a high-strength material. The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above examples. Anyone who is familiar with the art, the scope of the invention disclosed in the patent application, is in accordance with various changes or amendments, which are of course understood to belong to the technical scope of the present invention. In the embodiment, the material which is weaker than the electrode P is made of @, but a material containing the alloy of (4) or tin solder may be used. In the above embodiment, the present invention has been applied to a probe used for material processing, but the present invention can also be applied to a probe which is used for inspection without performing a dissolution treatment. The present invention can also be applied to a mask of a FPD (flat panel display) of a mask other than the wafer w.
116851.doc -13- 1314213 線專其他基板之情形。 [實施例] 在探針10之材質中採用 λ ^ ^ ^ 度比電極ρ弱之錫之情形和 材質中採用了鶴之情形下，進行了關 命之實驗。另，此時之電極ρ 哥 表示測定次數，縱軸表矛接觸雷 在圖8中，橫轴 〇 接觸電阻。若接觸電阻大，掇钻 就無法使用，探針也會達 /Cn^ ^ Λ, 1Λ 如圖8所不’採用錫 :二探TO即使測定次數—，接觸電阻也穩定於1 二Γ採用鎢(w)之探針，以測定次數5。次左右， 出現接觸電阻值偏差女 + 大。從該實驗”可以確 並且接觸電阻之數值也 =針之壽命得以延長。並且，在探針上採用錫者，： 穩定。^低值保持穩定’故也可確認探針與電極之接觸 [產業上之可利用性] 本發明在延長探針之壽命時有用。 【圖式簡單說明】 係.4示探針裝置之構成之概略側視圖。 圖2係顯示探針之《部之構成之縱剖面之説明圖。 圖3係顯示印刷電路基板之電路功能之說明圖。 圖係4器與熱板之縱剖面之説明圖。 圖5係顯示兩根探針與電極接觸之狀態之説明圖。 圖6⑷係顯示將探針接觸於電極之狀態之縱剖面之 圖。（b)係顯示從電極拉離探針之狀態之縱剖面之説明圖。 I16851.doc -14· 1314213 圖7係在表面覆蓋錫之接觸部之縱剖面之説明圖。 圖8係顯示測量探針之壽命之實驗結果之圖表。 【主要元件符號說明】 1 探針裝置 2 探針卡 3 載置台 4 移動機構 10 探針116851.doc -13- 1314213 The case of other substrates for the line. [Examples] In the case of using the material of the probe 10 in which λ ^ ^ ^ is weaker than the electrode ρ and the case where the crane is used in the material, the experiment of the life is carried out. In addition, the electrode ρ at this time indicates the number of measurements, and the vertical axis spear contacts the lightning. In Fig. 8, the horizontal axis 〇 contacts the resistance. If the contact resistance is large, the boring will not be used, and the probe will also reach /Cn^^ Λ, 1 Λ as shown in Fig. 8, the use of tin: the second test TO even the number of measurements - the contact resistance is also stable at 1 Γ using tungsten (w) probe to determine the number of times 5. About the second time, the contact resistance value deviation female + large appears. From the experiment, it is confirmed that the value of the contact resistance is also prolonged. The life of the needle is prolonged. Moreover, when tin is applied to the probe, it is stable: ^ The low value remains stable, so the contact between the probe and the electrode can also be confirmed. [Effect of the present invention] The present invention is useful for extending the life of the probe. [Brief Description] Fig. 2 is a schematic side view showing the configuration of the probe device. Fig. 2 is a view showing the configuration of the probe. Fig. 3 is an explanatory view showing a circuit function of a printed circuit board. Fig. 5 is an explanatory view showing a state in which two probes are in contact with an electrode. Fig. 6 (4) is a view showing a longitudinal section of a state in which the probe is brought into contact with the electrode, and (b) is an explanatory view showing a longitudinal section of the state in which the probe is pulled away from the electrode. I16851.doc -14· 1314213 Fig. 7 is on the surface Fig. 8 is a diagram showing the experimental results of the life of the measuring probe. Fig. 8 is a graph showing the experimental results of measuring the life of the probe. [Explanation of main component symbols] 1 Probe device 2 Probe card 3 Mounting table 4 Moving mechanism 10 Probe
10a 探針之本體 10b 探針之接觸部之表面 11 接觸器 12 印刷電路基板 20 接續端子 30 樑部 31 接觸部 40 測試電路 41 熔結電路 42 開關電路 50 水平支持台 51 升降驅動器 52 X-Y平台 60 加熱器 61 熱板 62 容器 116851.doc 15- 1314213 A 溶融錫 P 電極 W 晶圓 116851.doc -16-10a probe body 10b probe contact surface 11 contactor 12 printed circuit board 20 connection terminal 30 beam portion 31 contact portion 40 test circuit 41 fusion circuit 42 switch circuit 50 horizontal support table 51 lift drive 52 XY stage 60 Heater 61 Hot plate 62 Container 116851.doc 15- 1314213 A Dissolved tin P Electrode W Wafer 116851.doc -16-