TW200400250A - Polishing composition - Google Patents

Abstract

A polishing composition that prevents a peripheral portion of the surface of a substrate for a magnetic disk from being excessively polished. A first polishing composition according to the present invention includes a compound, which is presented by the following general formula. The letter X represents a residue of polyether polyol. The letter m represents a number equal to the number of hydroxyl groups in one molecule of the polyether polyol. The letter Y represents a divalent hydrocarbon group. The letter Z represents a residue of a monovalent compound, which has an active hydrogen atom. The letter n represents a integer number of at least three. A second polishing composition according to the present invention includes a polymer, which has a monomer unit derived from isoprene sulfonic acid or its salt.

Description

200400250 V. Description of the invention (1)-"Technical field to which the invention belongs" The present invention relates to a polishing composition, for example, for polishing a substrate of a magnetic disk. 2. [Previous Technology] When manufacturing a magnetic disk from a magnetic disk substrate, the surface of the substrate is usually polished to remove unduat ion and smooth the surface of the substrate. Abrasive compositions including abrasives and abrasive accelerators are commonly used to polish substrate surfaces. However, when a conventional polishing composition is used to polish the surface of a substrate, the peripheral portion of the substrate surface is more sharply polished than the peripheral portion. This hinders the increase in disk capacity. III. [Summary of the Invention] The object of the present invention is to provide a polishing composition to avoid excessive polishing of the peripheral portion of the substrate surface when using the composition to polish the surface of a magnetic disk substrate. In order to achieve the above object, the present invention provides an abrasive composition including an abrasive 'grinding accelerator and water. The polishing composition further includes a compound represented by the following general formula: 0 〇 ❶

丨 丨 II X- (C-NH-Y-dragon-C- (〇-CH2-CH2) n-Z) m x represents a group of polyalcohol. ^ Means one equal to the polyether polyol in the molecule

Page 8 200400250 V. Description of the invention (2)-The number of hydroxyl groups. Y represents a divalent hydrogen carbon group. z represents a monovalent compound group having an active hydrogen atom. The number η represents an integer of 3 or more. The present invention also provides an abrasive compound comprising an abrasive, a grinding accelerator, and water. The abrasive composition further includes a polymer having monomer units derived from isoprenesulfonic acid or a salt thereof. ', 发, other views and advantages can be understood from the following description and the illustrated pattern' through the example of the embodiment. 4. Embodiment The first embodiment of the present invention is as follows: According to the first embodiment of the present invention, the polishing composition is a compound represented by the following general formula (1), an abrasive, a grinding accelerator, and water. 0 0

II II X- (C-NH-Y-NH-C- (0-CH2-CH2) n-Z) in ~ (1) In the general formula (1), X represents a group of a polyether polyol. Better poly

The ether polyol is formed from a compound including an active hydrogen atom and an alkylene oxide. The polyether chain of the polyether polyol preferably includes 20 to 90% by weight of oxyethylene. 111 represents a number equal to the number of hydroxyl groups in the poly-polyol molecule. m is preferably an integer from 2 to 8. γ represents a divalent hydrogen carbon group. Z represents an early-valent compound group having an active hydrogen atom and a dipper. Specific examples of γ and z are by using at least one epoxy Γ ^ κ G and bad lactone with lower alcohol or

200400250 V. Description of the invention (3) Addition polymer formed by addition reaction of an alkyl group having less than or equal to 8 carbon atoms. The number η represents an integer of at least three. First, the compound represented by the general formula (1) will be described below. The compound represented by the general formula (1) is an inhibitor, which is used to prevent the polishing degree of the peripheral portion of the substrate surface from being much higher than that of other substrates when the surface of the magnetic disk substrate is polished by the polishing composition of the first embodiment. Specific examples of the compound represented by the general formula (1) are polyurethane surfactants, such as the BERM0D0L PUR series manufactured by AKZO NOBEL, the ADEKA NOL UH series' manufactured by ASAHI DENKA C0, LTD, and Ronm & Manufactured by Hass Company. In the grinding compound of the first embodiment, the amount of the compound represented by the general formula (丨) is preferably 0.001 to 1% by weight, more preferably 0 005 to 0.5% by weight, and most preferably 0.005 to 0.3% by weight. The abrasives are explained below. When the surface of a magnetic disk substrate is polished using the polishing composition of the first embodiment, the abrasive is used to mechanically polish the surface of the substrate. Specific examples of abrasives include aluminum oxides, such as aluminum oxide, 0-alumina, zc—alumina α-emulsification inscriptions (5-oxygen such as silicon oxide colloids and fumed oxidized stone eve; and monolithic dioxide 'hexagonal body Hafnium oxide, hafnium; zirconia, such as fuming hafnium oxide, zirconium and amorphous hafnium oxide; titanium oxide, titanium, titanium monoxide, and fuming titanium oxide; / 5-silicon nitride, and amorphous silicon nitride ; And fuming alumina; silicon dioxide, hafnium oxides, such as osmium dioxide, cardiac hafnium oxide, and carbon dioxide, monoclinic zirconia, tetragonal oxidation, such as titanium oxide, trioxide, such as α -Nitride stone, and silicon carbide, such as α- $ silicon carbide,

200400250 V. Description of the invention (4) / 5-silicon carbide and amorphous silicon carbide. The first species can be only one, two or more. "When the abrasive is dioxide, the average particle size in terms of βΕΤ is better. An η" ^ w product served by the flat ^ υ.005 — 〇 · 5 // m, more 〇〇〇ι — Ο] Abrasives are alumina, thorium oxide, and 从 · 3 am. When lice argon, lice titanium, messy silicon or silicon carbide, + laser bamboo particle size analyzer (for example, by Beck_ c〇uit: The average particle size of the abrasive measured by ls-230) manufactured by nc., preferably 1 · 5), more preferably 〇. 5-2. When the abrasive A: chemical compound, the average particle size of the abrasive measured by a scanning electron microscope: preferably ^, preferably G.OH · ^, and more preferably q.Q5_g. 45 ^ thousand-hundred gods—specific examples The number of abrasives contained in the polishing composition is 40% by weight, and more preferably 25% by weight. The rod is 0.1 to 1 ~ The following will describe the polishing accelerator. The polishing composition of the first embodiment is used to polish the disk substrate. Surface grinding accelerator is used to chemically grind the surface of the substrate ^ soil " acetic acid in acetic acid, acetic acid, glyceryl thiosuccinic acid carboxylate. Specific examples of grinding accelerators include grinding acid, malic acid, glycolic acid, citric acid, maleic acid, itaconic acid, malonic acid, lactic acid, phenylglycolic acid, and trans-butenoic acid. , Alanine 'Alanine, Thioacetic Acid, Ethyl Mercaptosuccinate, Aluminum Nitrate, Aluminum Sulfate and Iron Nitrate (丨 丨 I) :: Ϊ J Fruit Acid' Glycolic Acid, Succinic Acid and Citric Acid 5 succinic acid. The first embodiment of the grinding composition may include only one, two or more types of grinding plus M. The grinding accelerator of the first embodiment contains a greater amount of grinding accelerator.

1 ^ · ΙΒΗ Page 11 200400250

It is preferably from 0.01 to 25% by weight, more preferably from 0 to 20% by weight, and even more preferably from 0 to 10% by weight. Water will be explained below. In the polishing composition of the first embodiment, water is used as the dispersing medium and the compound represented by the general formula (1), the solvent 1 of the abrasive and the polishing accelerator. Preferably, the water does not contain impurities. More specifically, the water is preferably filtered ion-exchanged water and steamed crane water. The polishing composition of the first embodiment is preferably prepared by mixing, dissolving and dispersing a compound represented by the general formula (丨), an abrasive, and a grinding accelerator with water. A paddle stirrer or an ultrasonic distributor can be used for the above mixing step. The pH of the polishing composition of the first embodiment is preferably 2-7. The first embodiment provides the following advantages. When the surface of the magnetic disk substrate is polished using the polishing composition of the first embodiment, the degree of polishing around the surface of the substrate can be avoided to be much higher than that of other portions. This helps increase disk capacity. Since the polishing composition includes a compound represented by the general formula (1), the polishing composition of the first embodiment can suppress the polishing of the peripheral portion of the substrate surface. The compound represented by the general formula (丨) appropriately reduces the friction between the substrate and the polishing pad used to polish the substrate. It is speculated that the reduction of the frictional force will suppress the polishing of the peripheral portion of the substrate surface. When the amount of the compound represented by the general formula (1) contained in the polishing composition of the first embodiment is greater than or equal to 0.0001% by weight, it is provided a polishing composition capable of sufficiently suppressing excessive polishing of the peripheral portion of the substrate surface. When the general formula (i)

200400250

5. Description of the invention (6) When the amount of the compound shown in (6) is greater than or equal to 0.05% by weight, it is possible to effectively suppress excessive polishing of the peripheral portion of the substrate surface. When the amount of the compound represented by the general formula (1) in the polishing composition is less than or equal to 1% by weight, it is possible to avoid a sharp reduction in the polishing speed and an increase in cost caused by adding too many compounds. When the content of the compound represented by the general formula (丨) is less than or equal to 0.5% by weight, it is possible to more reliably avoid a sudden decrease in the polishing rate. When the content of the compound represented by the general formula (, // 1,) is less than or equal to 0.3% by weight ", it is possible to almost completely avoid a sudden decrease in the grinding speed. When the average particle size of the abrasive is greater than or equal to 0 · 05 (assuming that the abrasive is silicon dioxide, zirconia, titanium oxide, silicon nitride, or silicon carbide), and large (= or equal to 0 · 0 1 # m (assuming Abrasive is thorium oxide), which can avoid the sharp reduction of the grinding speed due to the average particle size of the abrasive being too small. When the average particle size of the abrasive = small is greater than or equal to 〇 · 〇1 Am (assuming that the abrasive is dioxide dioxide), greater than or equal to 0 ， 1 from m (assuming that the abrasive is alumina, zirconia, titanium oxide, nitride nitride or silicon carbide), and greater than or equal to 0.05 (assuming that the abrasive is oxidized), the grinding speed can be avoided more reliably. Less. When the average particle size of the abrasive is less than or equal to 0 · 5 // m (assuming stone dioxide or hafnium oxide), and less than or equal to 2 # m (assuming that the abrasive is alumina, oxide cone 'titanium oxide, nitriding Silicon or silicon carbide), it is possible to avoid the increased roughness and shape of the polished surface due to the abrasive's average particle size being too large. When the average particle size is less than or equal to 0.3 # m (assuming abrasive It's a oxidized stone eve) Less than or equal to 1 · 5 // m (assuming that the abrasive is alumina, oxide cone 'titanium oxide, silicon nitride or silicon carbide), and less than or equal to 0.45 // m (assuming that the abrasive is hafnium oxide), Avoid surfaces with ground more reliably

200400250 V. Description of the invention (7) Roughness is improved. When the abrasive in the abrasive composition of the first embodiment is greater than or equal to 0.1% by weight ', it is possible to avoid a reduction in grinding speed due to lack of abrasive. When the abrasive content is greater than or special to 1% by weight, it is possible to more reliably avoid the reduction in grinding speed due to lack of abrasive. When the number of abrasives in the abrasive composition of the first embodiment is less than or equal to 40 weights, it is possible to avoid the increase in viscosity caused by the excessive amount of abrasives, and to cause surface defects of the abrasive base and the abrasive surface. When the amount is less than or equal to 25% by weight s%, it is possible to more reliably avoid increase in viscosity, blockage of the polishing pad, and generation of surface defects on the polished surface. An increase in viscosity will reduce the workability of the abrasive composition. When the grinding accelerator is malic acid, glycolic acid, succinic acid, or citric acid, it can increase the grinding speed and suppress the formation of surface defects on the polished surface. When the polishing accelerator is succinic acid, the polishing speed can be further increased, and the formation of surface defects on the polished surface can be reliably suppressed. When the number of grinding accelerators contained in the grinding composition of the first embodiment

When the amount is greater than or equal to 0.01% by weight, it is possible to avoid a reduction in the polishing speed due to a lack of a polishing accelerator. When the content is greater than or equal to 0.01% by weight, it is possible to more reliably avoid a reduction in the grinding speed. When the content is greater than or equal to 0.2% by weight, it is very successful to prevent the reduction in the grinding speed. When the amount of the grinding accelerator contained in the grinding composition of the first embodiment is less than or equal to 25% by weight, the cost increase due to excessive content can be avoided. When the content is less than or equal to 20% by weight, cost increase can be avoided more reliably. Very successful when the content is less than or equal to 10% by weight

Page 14 200400250 V. Description of Invention (8) ^ Avoid cost increase. When the acid value of the grinding composition of the first embodiment is greater than or equal to 2, the grinding machine for grinding can be prevented from being abraded by the grinding composition. When the pH value of the abrasive composition of the first specific embodiment is less than or equal to 7, it is possible to avoid a decrease in the grinding speed due to the inspection of the abrasive composition, an increase in the surface roughness of the ground surface, and an increase in the surface roughness of the ground surface. Scratches are formed. A second specific embodiment of the present invention will be described below. The polishing composition of the second embodiment is composed of a polymer having monomer units derived from isoprene dicarboxylic acid or a salt thereof, an abrasive, a polishing agent, and water. The β polymer is an inhibitor, which is used to prevent the polishing degree of the peripheral portion of the substrate surface from being much higher than that of other substrates when the surface of the magnetic disk substrate is polished by the polishing composition of the second embodiment. The polymer may contain monomer units which are not derived from isoprenesulfonic acid or a salt thereof. Examples of monomer units not derived from isoprene sulfonic acid or a salt thereof are monomer units derived from isoprene acid or acrylic acid. In the grinding compound of the second specific embodiment, the amount of the polymer is preferably 0.001 to 1 wt%, more preferably 0.005 to 0.5 wt%, and most preferably 0 ... 0.3 wt%. . ^ The polishing composition of the second embodiment is prepared by mixing, dissolving and dispersing a polymer, a grinding and grinding accelerator with water. 7 The pH value of the polishing composition of the second embodiment is preferably 7. The general formula (1) 胼 -human in the polishing composition of the first embodiment. All compounds

Page 15 200400250 V. Description of the invention (9) In the second embodiment, it is replaced by a polymer. Therefore, the abrasive composition of the second embodiment can provide other advantages besides the advantages of the first embodiment, which will be listed later. When using the polishing composition of the second embodiment to polish the surface of a magnetic disk substrate, it is possible to avoid that the degree of polishing around the surface of the substrate is much higher than that of other portions. In the second embodiment, the polishing composition suppresses excessive polishing of the substrate around the specific surface because the polishing composition contains a polymer. The polymer reduces the friction between the substrate and the polishing pad used to polish the substrate, and functions as a compound represented by the general formula (1). It is presumed that reducing the friction will suppress the polishing of the peripheral portion of the substrate surface. When the amount of the polymer in the polishing composition of the first embodiment is greater than or equal to 0. 0.001% by weight, a polishing composition capable of sufficiently suppressing excessive polishing of the peripheral portion of the substrate surface is provided. The polishing composition also polishes the substrate surface at a sufficient polishing rate. When the amount of the polymer is greater than or equal to 0,005% by weight, it is effective to suppress excessive grinding of the peripheral portion of the substrate surface. ^ When the amount of polymer in the grinding composition of the second embodiment is less than or equal to 1% by weight, the grinding speed caused by adding too much polymer can be avoided. When the content of the polymer is less than or equal to 0.5% by weight, it is possible to more reliably avoid a sudden decrease in the grinding speed. When the polymer content is less than or equal to 0 "3" wt%, a sharp reduction in the grinding speed can be almost successfully avoided. + ^ @The artisan should understand that the present invention should have various variations without & _1¾ a month of spiritual scope. In particular, it should be understood that the present invention should be specifically described in the following forms. The first embodiment of the abrasive composition may further include

Page 16 200400250 V. Description of the Invention (o) Polymers of monomer units of olefin sulfonic acid or salts thereof The polishing composition of the second embodiment may further include a compound of formula (1). The abrasive compositions of the first and second embodiments may further include additives commonly used in conventional abrasive compositions. Additives include celluloses, such as carboxymethylcellulose and transethyl cellulose; water-soluble alcohols, such as ethanol, propanol, and ethylene glycol; surfactants, such as sodium alkyl benzoate, and Tsai Hydrolyzed condensates of sulfonic acids; polyorganic anionic materials, such as lignosaltates and polyacrylic acid vinegar; water-soluble polymers (emulsifiers), such as polyethylene glycol; , Dithizone, oxine, EDTA and NTA; disinfectants, such as sodium vinegar and potassium bicarbonate, inorganic salts, such as aluminum sulfate, nickel sulfate, aluminum nitrate, nickel nitrate , Iron nitrate and ammonium molybdate; higher-order fatty acid amines; sulfonates; rust inhibitors and water-soluble processing oils. The polishing composition of the first and second embodiments of the invention may be a stock solution including a compound or a polymer represented by the general formula (1) at a high concentration, an abrasive, and a polishing accelerator. The stock solution was dissolved in water before grinding. Among them, the workability of the abrasive composition during storage and transportation is improved. The polishing compositions of the first and second embodiments can be used to grind magnetic disk elements other than magnetic disks. In this case, the σ knife near the edge of the polished surface avoids sharpening more than the portion near the edge. The following examples and comparative examples illustrate the present invention in more detail. Proximity oxygen: aluminum, average particle size is 0.8 // m) ‘mill plus ^’ According to the composition and ratio shown in Table 1 below, it interacts with ions.

Page 17 200400250 V. Description of the invention (11) Water was mixed to prepare the grinding compositions of Examples 1 to 31 and Comparative Example 4. Under the following conditions, the upper and lower surfaces of the magnetic disk substrate were polished using the polishing composition of each example. Substrate: φ3 · 5 (with 95 mm) substrate with electroless nickel-phosphorus coating Polishing machine: Double-sided polishing machine with P 720mm upper and lower table Polishing pad: BELLATRIX N0048, polishing pad manufactured by Kanebo Ltd. Load: 100 g / Cm 2 (with 10 kPa) Rotary speed of the upper machine: 24 rpm Rotary speed of the lower machine: 16 rpm Feed amount of the abrasive composition: 150 m 1 / mi η 研磨 Grinding amount: 3 / zm Micro XAM manufactured by ADE Phase Shift (US) is used to measure the rolling value V r of the peripheral portion of the substrate after it has been polished. The measured value V i * is substituted below

Column equation (2) is used to obtain the reduction rate of barrel milling. If the reduction rate of barrel grinding is greater than 20% ', it is evaluated as ◎, if the reduction value of barrel grinding is greater than 0% but less than 20%, it is evaluated as 0, and if the reduction rate of barrel grinding is greater than 0% but less than 10 % 'Is evaluated as △, and if the reduction value of the barrel grinding is less than or equal to 0%, it is evaluated as X. The results are shown in the "Rolling" column of Table 1. Reduction rate of barrel grinding [%] = (Vr / Vr of Comparative Example 1) X 100 The barrel grinding is one of the reference indicators for showing the degree of excessive grinding of the peripheral portion of the substrate surface. The definition of barrel grinding is as follows. As shown in Figure 1 (a),

Page 18 200400250 V. Description of the invention (12) 0 · 30 mm from the edge of the surface is set to point A, and 3.8 mm from the edge of the substrate is set to point B. Barreling is defined as the maximum distance between the intersection curve connecting points a and B and the straight line connecting point A and point B. The peripheral portion of the Vd substrate after polishing was measured using the MicrocroxAM. The measured V d value is substituted into the following equation (3) to obtain the rate of descent. If the reduction rate of the stabbing is greater than 20%, it is evaluated as ◎, if the reduction value of the stabbing is greater than 10% but less than 20%, it is evaluated as 〇, and if the reduction rate of stabbing is greater than 0% but less than 10% , It is evaluated as △, and if the drop value of the grinding is less than or equal to 0%, it is evaluated as X. The results are shown in the " Polishing " column of Table 1. The reduction rate of poking [° / G] = (l-Vd / Vd of Comparative Example 1) X 100 ~ (3) The extinguishing system is around the surface of the display substrate. One of the reference indicators of the degree of excessive grinding. The definition of stamping is as follows. As shown in Figure 丨 (b), 4 · 30 mm from the edge of the substrate surface is set to point C, and Inner heterogeneity 3.30 mm is set to point D, and 0.30 mm from the edge of the substrate surface is set to point E. Line L is the cross-sectional curve connecting point c and point D, which is obtained by the least square method Located on the line L, the bottom of 0.30 mm from the peripheral part of the substrate is set to point E '. The poking is defined as the distance between point e and point E. The polishing is obtained according to the following equation (4) The polishing speed of the substrate. If the polishing speed is greater than or equal to 0.7 · 0 # m / min, it is evaluated as ◎, and if the polishing speed is greater than or equal to 65 · m // min but less than 0 · 70 // m / min, Then it is evaluated as 0 '. If the grinding speed is greater than or equal to 0.60 // m / min but less than 0-65 / zm / min, it is evaluated as △, and if the grinding speed is less than 060,

Page 19 200400250 V. The description of the invention (13) is evaluated as X. The results are shown in the "Grinding speed π" column of Table 1. Grinding speed [// m / min] = weight that is basically reduced due to polishing [g] / (polished area of the substrate [c m2] X density of nickel plating [g / c m3] X Grinding time [min] X 10000 ～ (4) Table 1 Grinding accelerator fJ agent value Rolling a Grinding speed type (including f (weight f%) Species degree (cps) including f it ± %) 兖 Example i Amber broken 0. L25 A 9500 0.0025 3 5 ◎ ◎ Δ Example 2 Su Gong 鲅 0.25 A 1809500 0.00125 3,5 〇〇〇5 Γ Example 3 Amber 醆 0 25 A 9500 0, 0025 3.5 ◎ ◎ Δ (

Page 20, 200,400, 250 5. Description of the invention (14) f bubble example 4 slope jr completed 0.25 A 9500 0. 0025 3.5 ◎ ◎ Δ Exceptional example 5 pit break 0.375 A 9500 0. 0025 3.5 ◎ ◎ Δ r. Court case δ Glass; 妫 埏 0.25 A aoooo 0, 0025 3.5 ◎ ◎ 〇 Real cesium 洌 7 Poper mystery 0 25 A 8500 0 0025 3.5 ◎ ◎ 〇 Reward example 8 Tibetan fruit 鲅 0.25 A 9500 Q. 0025 3 0 ◎ ◎ Δ Τ Yan Example 9 0 0 25 A 9500 0. 0025 2.4 oo Δ Lean General Example 10 B SI break 0.5 A 9500 0.0025 2 9 ◎ ◎ Δ r total correction number to 0, 25 A 9500 0. 0025 2.2 ◎ ◎ Δ Poverty Exemption 12 Mystery of Nongkang 0. 25 A 9500 0.0025 2.9 〇o △ Unsatisfactory Deduction U3 Propane Break 0. 25 A 9500 0.0025 2.4 ◎ © △ 14 Panthenamine Diethyl Narrow 0.25 A 9500 0.025 2.8 ◎ ◎ △ Poor example i5 Ekijiron 0.25 A 9500 0. 0025 3. L 〇oa Poor example carboxyethyl ethyl thiophene 0.25 A 9500 0.025 3.2 o 〇 ◎

200400250 V. Description of the invention (15) You Lian L7 iS 1 A δ500 0 0025 2 8 ◎ ◎ Δ f bubble example L8 0 L25 BL L80 0.0025 3 5 ◎ ◎ ◎ ore cesium diaphragm 19 0 25 BL L80 0 0025 3 5 ◎ ◎ ◎ r diarrhea 20000 375 BL m 0. 0025 3.5 ◎ ◎ ◎ 2L 0. 25 BL L80 0.0075 3.5 ◎ ◎ ◎ ◎ f22 22 amber 0.25 0 B1 180 0.002 3.5 ◎ ◎ ◎ f General example 23 amber Break 0 25 B2 90 0.0025 3 5 ◎ ◎ ◎ Leakage example 24 Capsule 0.25 BL 180 0.0025 3.0 ◎ ◎ 〇t ^ tf} 25 stalk lemon 0.25 BL 180 0. 0025 2. 4 〇oo 26 acetic acid踺 0.5 EL m 0.0025 2.9 ◎ ◎ 〇r cesium 洌 2 Malay 跶 0.2 & BL L80 0. 0025 2.2 ◎ ◎ o Poor running stop 28 Nongkang key 0.25 Β LBO 0.0025 2.9 〇o ◎ Within 29 of poor application Two breaks 0.25 Β1 m 0.0025 2.4 ◎ © or cesium example 30 amine diethyl reduction 0.25 BL m Q.0025 2.8 ◎ ◎ o 拗 i 3i 桴 Mongolia key is 1 EL L80 0.0025 3.8 ◎ ◎ o Compare r cesium Example 1 Sodium platinum 0.25---3 5 XX o (

Page 22 200400250 V. Description of the invention (16) The combination of the two has a value of 30. When the spinner and acrylic copolymer are subject to limited spirit and patent protection. In the column of the types of inhibitors listed in Table 1, A represents a common substance, and B1 is a copolymer of isoprene luteinic acid and valeric acid and acetic acid and isoprene. ，， 来 物 ， M indicates that the value of isoblock is based on the viscosity of the compound represented by general formula (1) when the viscosity of the compound represented by general formula (1) is measured using a BH-type rotational viscosity measuring composition and an inhibitor aqueous solution maintained at 25 t. The rotation speed of No. 6 is 10 rpm. When measuring the viscosity of the isoprene sulfonic acid copolymer, and measuring the viscosity of isoprene sulfonic acid and isoprene, the No. 3 rotator has a rotation speed of 62.5 rpm. · Although the preferred embodiment of the present invention is disclosed above, it is not the present invention. Any person skilled in the related arts can make some changes and retouches without departing from the scope of the present invention. The scope of the vine must be as defined by the scope of the patent application attached to this specification.

200400250 Brief Description of Drawings Figure 1 (a) illustrates the roll-off situation, and Figure 1 (b) illustrates the dub-off situation.

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Claims (1)

200400250 VI. Application Patent Scope 1. An abrasive composition including abrasive, abrasive accelerator and water, wherein the abrasive composition is further characterized by including a compound represented by the following general formula (1), 0 0 II II X- (C-NH-Y-NH-C- (〇-CH2-CH2) nZ) m where x represents a group of a polyether polyol, m represents a number equal to the number of hydroxyl groups in a polyether polyol, and Y represents Valence hydrogen carbon group. Z represents a monovalent compound group having an active hydrogen atom, Z represents a monovalent compound group having an active hydrogen atom, and η represents an integer equal to or greater than 3. 2. The polishing composition according to item 1 of the patent application scope, characterized in that the amount of the compound contained in the polishing composition is 0, 0 0 1-1% by weight. 3. An abrasive composition comprising an abrasive, an abrasive accelerator, and water, wherein the abrasive composition is further characterized by including a polymer having monomer units derived from isopropenesulfonic acid or a salt thereof. 4. The polishing composition according to item 3 of the scope of patent application, wherein the amount of the polymer contained in the polishing composition is from 0.01 to 1% by weight. 5. The polishing composition according to item 3 of the patent application, wherein the polymer is a polymer of isopropylene sulfonic acid and acrylic acid or a copolymer of isopropylene sulfonic acid and isopropylene. 6. An abrasive composition, wherein the abrasive composition includes an abrasive, an abrasive accelerator, and water, wherein the abrasive composition is further characterized by further comprising Page 25,200,400,250 6. Scope of patent application-a compound represented by the following general formula (1), 0 0 II II X- (C-NH-Y-NH-C- (0-CH2-CH2) nZ) m where , X represents a group of the polyether polyol, m represents a number equal to the number of hydroxyl groups in the molecule of the polyether polyol, and Y represents a divalent hydrogen carbon group. Z represents a monovalent compound group with an active hydrogen atom, Z represents a monovalent compound group with an active hydrogen atom, and η represents an integer equal to or greater than 3; and a monomer derived from isopropenesulfonic acid or a salt thereof Body unit polymer. 7. The polishing composition according to any one of item 6 of the patent application scope, characterized in that the polishing composition is used for polishing the surface of a magnetic disk substrate. Page 26