GB2390370A - Polishing composition - Google Patents
Polishing composition Download PDFInfo
- Publication number
- GB2390370A GB2390370A GB0312182A GB0312182A GB2390370A GB 2390370 A GB2390370 A GB 2390370A GB 0312182 A GB0312182 A GB 0312182A GB 0312182 A GB0312182 A GB 0312182A GB 2390370 A GB2390370 A GB 2390370A
- Authority
- GB
- United Kingdom
- Prior art keywords
- polishing composition
- polishing
- substrate
- composition according
- equal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 161
- 239000000203 mixture Substances 0.000 title claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 60
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 claims abstract description 36
- 150000001875 compounds Chemical class 0.000 claims abstract description 32
- 229920000642 polymer Polymers 0.000 claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 14
- 239000004721 Polyphenylene oxide Substances 0.000 claims abstract description 13
- 229920000570 polyether Polymers 0.000 claims abstract description 13
- 229920005862 polyol Polymers 0.000 claims abstract description 12
- 150000003077 polyols Chemical class 0.000 claims abstract description 12
- 239000000178 monomer Substances 0.000 claims abstract description 9
- 150000003839 salts Chemical class 0.000 claims abstract description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 6
- 150000002430 hydrocarbons Chemical group 0.000 claims abstract description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 5
- 229920001577 copolymer Polymers 0.000 claims description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 30
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 36
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 18
- 239000001384 succinic acid Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000007423 decrease Effects 0.000 description 14
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 12
- 230000003247 decreasing effect Effects 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 6
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 6
- 229910000420 cerium oxide Inorganic materials 0.000 description 6
- -1 fumed zirconia Chemical compound 0.000 description 6
- 239000003112 inhibitor Substances 0.000 description 6
- 239000001630 malic acid Substances 0.000 description 6
- 235000011090 malic acid Nutrition 0.000 description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 3
- 239000011976 maleic acid Substances 0.000 description 3
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 3
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 235000010980 cellulose Nutrition 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- QBYIENPQHBMVBV-HFEGYEGKSA-N (2R)-2-hydroxy-2-phenylacetic acid Chemical compound O[C@@H](C(O)=O)c1ccccc1.O[C@@H](C(O)=O)c1ccccc1 QBYIENPQHBMVBV-HFEGYEGKSA-N 0.000 description 1
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- UOFGSWVZMUXXIY-UHFFFAOYSA-N 1,5-Diphenyl-3-thiocarbazone Chemical compound C=1C=CC=CC=1N=NC(=S)NNC1=CC=CC=C1 UOFGSWVZMUXXIY-UHFFFAOYSA-N 0.000 description 1
- IXPNQXFRVYWDDI-UHFFFAOYSA-N 1-methyl-2,4-dioxo-1,3-diazinane-5-carboximidamide Chemical compound CN1CC(C(N)=N)C(=O)NC1=O IXPNQXFRVYWDDI-UHFFFAOYSA-N 0.000 description 1
- DTRPBOFZVSROCO-UHFFFAOYSA-N 4-(2-carboxyethoxy)-4-sulfanylidenebutanoic acid Chemical compound OC(=O)CCOC(=S)CCC(O)=O DTRPBOFZVSROCO-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- 229920001732 Lignosulfonate Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N R-2-phenyl-2-hydroxyacetic acid Natural products OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229940077388 benzenesulfonate Drugs 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 229920003090 carboxymethyl hydroxyethyl cellulose Polymers 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 1
- 229910000421 cerium(III) oxide Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 239000000645 desinfectant Substances 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- JGUQDUKBUKFFRO-CIIODKQPSA-N dimethylglyoxime Chemical compound O/N=C(/C)\C(\C)=N\O JGUQDUKBUKFFRO-CIIODKQPSA-N 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- KELHQGOVULCJSG-UHFFFAOYSA-N n,n-dimethyl-1-(5-methylfuran-2-yl)ethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=C(C)O1 KELHQGOVULCJSG-UHFFFAOYSA-N 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- 229960003512 nicotinic acid Drugs 0.000 description 1
- 235000001968 nicotinic acid Nutrition 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000002891 organic anions Chemical class 0.000 description 1
- 125000006353 oxyethylene group Chemical group 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000661 sodium alginate Substances 0.000 description 1
- 235000010413 sodium alginate Nutrition 0.000 description 1
- 229940005550 sodium alginate Drugs 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
A polishing composition that prevents a peripheral portion of the surface of a substrate for a magnetic disk from being excessively polished. A first polishing composition according to the present invention includes a compound, which is represented by the following general formula. <EMI ID=1.1 HE=19 WI=96 LX=437 LY=772 TI=CF> <PC>The letter X represents a residue of polyether polyol. The letter m represents a number equal to the number of hydroxyl groups in one molecule of the polyether polyol. The letter Y represents a divalent hydrocarbon group. The letter Z represents a residue of a monovalent compound, which has an active hydrogen atom. The letter n represents an integer number of at least three. A second polishing composition according to the present invention includes a polymer, which has a monomer unit derived from isoprene sulfonic acid or its salt. These polishing compositions also comprise an abrasive, a polishing accelerator and water.
Description
::;. TITLE OF THE INVENTION
: Polishing Composition 5 BACKGROUND OF THE INVENTION
The present invention relates to a polishing composition used for polishing, for example, a substratefor a magnetic disk. When manufacturing a magnetic disk from a substrate for a magnetic disk, the surface of the substrate is normally polished to remove undulation and to smooth the surface of the substrate. A polishing composition that includes abrasive and 15 a polishing accelerator is generally used to polish the surface of the substrate.
However, when the surface of the substrate is polished using a conventional polishing composition, a peripheral 20 portion of the surface of the substrate is excessively polished, as compared to the portion of the surface other than the peripheral portion. This hinders increasing the capacity of the magnetic disk.
25 SUMMARY OF THE INVENTION
The objective of the present invention is to provide a polishing composition that prevents a peripheral portion of the surface of a substrate from being excessively polished 30 when the polishing composition is used for polishing the surface of a substrate for a magnetic disk.
To achieve the above objective, the present invention provides a polishing composition, which includes abrasive, a 35 polishing accelerator, and water. The polishing composition
tie I: t:: I': le' I' ': further includes a compound, which is represented by a general formula as follows: O O X-(C NH-Y-NH-C-(O- Ct12 - C2)n - Z)m The letter X represents a residue of polyether polyol.
5 The letter m represents a number equal to the number of hydroxyl groups in one molecule of the polyether polyol. The letter Y represents a divalent hydrocarbon group. The letter Z represents a residue of a monovalent compound, which has an active hydrogen atom. The letter n represents an integer 10 number equal to or greater than three.
The present invention also provides a polishing composition, which includes abrasive, a polishing accelerator, and water. The polishing composition further includes a 15 polymer having a monomer unit derived from isoprene sulfonic acid or its salt.
Other aspects and advantages of the invention will become apparent from the following description, taken in conjunction
20 with the accompanying drawings, illustrating by way of example the principles of the invention.
BRIEF DESCRIPTION OF THE DRAWINGS
25 The invention, together with objects and advantages thereof, may best be understood by reference to the following description of the presently preferred embodiments together
with the accompanying drawings in which: Fig. l(a) is a diagram explaining a roll-off; and 30 Fig. l(b) is a diagram explaining a dub-off.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
::: t:It:: dl':t A first embodiment of the present invention will now be described. A polishing composition according to the first embodiment 5 is formed of a compound represented by the following general formula (1), abrasive, a polishing accelerator, and water.
O O À ( 1)
X-(C-NH-Y-NH-C-(O-CH2- - CH2)n - Z)m 10 In the formula (1), the letter X represents a residue of polyether polyol. The preferable polyether polyol is induced from a compound, which includes an active hydrogen atom, and alkylene oxide. The polyether chain of the polyether polyol preferably includes between 20 and 90 weight % of oxyethylene 15 group. The letter m is equal to the number of hydroxyl groups in one molecule of polyether polyol. The letter m is preferably an integer number from two to eight. The letter Y represents a divalent hydrocarbon group. The letter Z represents a residue of a monovalent compound, which has an 20 active hydrogen atom. The concrete example of the letters Y and Z is an addition polymer formed by addition polymerization of at least one of ethylene oxide and propylene oxide with lower alcohol or alkyl group that have a carbon number of less than or equal to eight. The letter n represents an integer 25 number of at least three.
At first, a compound represented by the above formula (1) will be described.
30 The compound represented by the formula (1) is an inhibitor that prevents a peripheral portion of the surface of a substrate from being excessively polished, as compared to a portion of the surface other than the peripheral portion, when
: s: t the polishing composition according to the first embodiment is used for polishing the surface of the substrate for a magnetic disk. 5 Concrete examples of the compound represented by the formula (1) are polyurethane surface-active agents, such as BERMODOL PUR series manufactured by AKZO NOBEL, ADEKA NOL UH series manufactured by ASAHI DENKA CO., LTD., and Primal series manufactured by Rohm and Haas Company.
The amount of compound represented by the formula (1) included in the polishing composition according to the first embodiment is preferably between 0.001 and 1 weight %, more preferable is between 0.005 and 0.5 weight %, and the most 15 preferable is between 0.005 and 0.3 weight %.
The abrasive will now be described.
The abrasive mechanically polishes the surface of the 20 substrate when the surface of the substrate for a magnetic disk is polished using the polishing composition according to the first embodiment.
Concrete examples of the abrasive are: alumina, such as 25 a-alumina, 5alumina, O-alumina, K-alumina, and fumed alumina; silicon dioxide, such as colloidal silica and fumed silica; cerium oxide, such as cerium dioxide, dicerium trioxide, hexagonal ceria, cubic ceria, and face centered cubic ceria; zirconium oxide, such as fumed zirconia, monoclinic zirconia, 30 tetragonal zirconia, and amorphous zirconia; titanium oxide, such as titanium monoxide, dititanium trioxide, titanium dioxide, and fumed titania; silicon nitride, such as a-silicon nitride, 5-silicon nitride, and amorphous silicon nitride; and silicon carbide, such as a- silicon carbide, 5-silicon carbide, 35 and amorphous silicon carbide. The number of types of the
Iel'ItI: ltt'tIlll. Itill:ll abrasive included in the polishing composition according to the first embodiment may be only one, or may be two or more.
When the abrasive is silicon dioxide, the mean particle 5 size of the abrasive obtained from the surface area measured based on the BET method is preferably between 0.005 and 0.5 m, and more preferable is between 0. 01 and 0.3 m. When the abrasive is alumina, zirconium oxide, titanium oxide, silicon nitride, or silicon carbide, the mean particle size (D50%) of 10 the abrasive measured by a laser diffraction particle size analyzer (for example, LS-230 manufactured by Beckman Coulter, Inc.) is preferably between 0.05 and 2 m, and more preferable is between 0.1 and 1.5 Bum. When the abrasive is cerium oxide, the mean particle size of the abrasive measured by a scanning 15 electron microscope is preferably between 0.01 and 0.5 um, and more preferable is between 0.05 and 0.45 um.
The amount of abrasive included in the polishing composition according to the first embodiment is preferably 20 between 0.1 and 40 weight %, and more preferable is between 1 and 25 weight %.
The polishing accelerator will now be described.
25 The polishing accelerator chemically polishes the surface of the substrate when the surface of the substrate for a magnetic disk is polished using the polishing composition according to the first embodiment.
30 Concrete examples of the polishing accelerator are malic acid, glycolic acid, succinic acid, citric acid, maleic acid, itaconic acid, malonic acid, iminodiacetic acid, gluconic acid, lactic acid, mandelic acid, crotonic acid, nicotinic acid, acetic acid, glycin, alanine, thioacetic acid, 35 mercaptosuccinic acid, carboxyethyl thiosuccinate, aluminum
file ':' '; I't!,;e nitrate, aluminum sulfate, and iron nitrate (III). Preferable polishing accelerators are malic acid, glycolic acid, succinic acid, and citric acid. A particularly preferable polishing accelerator is succinic acid. The number of types of the 5 polishing accelerator included in the polishing composition according to the first embodiment may be only one, or may be two or more.
The amount of the polishing accelerator included in the 10 polishing composition according to the first embodiment is preferably between 0.01 and 25 weight %, more preferable is between 0.1 and 20 weight %, and most preferable is between 0.2 and 10 weight %.
15 The water will now be described.
In the polishing composition according to the first embodiment, the water serves as dispersion medium and solvent of the compound represented by the formula (1), the abrasive, 20 and the polishing accelerator. It is preferable that the water does not include impurities. More specifically, preferable water is filtered ion exchanged water and distilled water. 25 The polishing composition according to the first embodiment is prepared by mixing the compound represented by the formula (l), the abrasive, and the polishing accelerator with water to be dissolved and dispersed. A blade agitator or an ultrasonic distributor may be used in mixing.
The pH of the polishing composition according to the first embodiment is preferably between 2 and 7.
The first embodiment provides the following advantages.
B: l t l 1 1 1 1 1 1
À 1 When the surface of the substrate for a magnetic disk is polished using the polishing composition according to the first embodiment, the peripheral portion of the surface of the substrate is prevented from being excessively polished as 5 compared to the portion of the surface other than the peripheral portion. This contributes to increasing the capacity of the magnetic disk. The polishing composition according to the first embodiment suppresses excessive polish of the peripheral portion of the surface of the substrate 10 since the polishing composition includes the compound represented by the formula (1). The compound represented by the formula (1) adequately reduces friction between the substrate and a polishing pad used for polishing the substrate. It is presumed that the reduction of friction 15 suppresses excessive polish of the peripheral portion of the surface of the substrate.
When the amount of the compound represented by the formula (l) that is included in the polishing composition 20 according to the first embodiment is greater than or equal to 0.001 weight %, the polishing composition that can sufficiently suppress excessive polish of the peripheral portion of the surface of the substrate is provided. When the amount of the compound represented by the formula (1) is 25 greater than or equal to 0.005 weight %, excessive polish of the peripheral portion of the surface of the substrate is effectively suppressed.
When the amount of the compound represented by the 30 formula (1) that is included in the polishing composition is less than or equal to 1 weight %, extreme decrease of the polishing speed and increase of cost caused by adding excessive compound are prevented. When the content of the compound represented by the formula (1) is less than or equal 35 to 0.5 weight %, extreme decrease of the polishing speed is
all more reliably prevented. When the content of the compound represented by the formula (1) is less than or equal to 0.3 weight %, extreme decrease of the polishing speed is prevented substantially without fail.
When the mean particle size of the abrasive is greater than or equal to 0. 005 Am in the case with silicon dioxide, greater than or equal to 0.05 Am in the case with alumina, zirconium oxide, titanium oxide, silicon nitride, or silicon 10 carbide, and greater than or equal to 0.01 Am in the case with cerium oxide, the extreme decrease of the polishing speed that is attributed to excessively small mean particle size of the abrasive is prevented. When the mean particle size of the abrasive is greater than or equal to 0.01,um in the case with 15 silicon dioxide, greater than or equal to 0.1 um in the case with alumina, zirconium oxide, titanium oxide, silicon nitride, or silicon carbide, and greater than or equal to 0.05 Am in the case with cerium oxide, the extreme decrease of the polishing speed is more reliably prevented.
When the mean particle size of the abrasive is less than or equal to 0.5, um in the case with silicon dioxide or cerium oxide, and less than or equal to 2 um in the case with alumina, zirconium oxide, titanium oxide, silicon nitride, or 25 silicon carbide, the increase of surface roughness of the polished surface and formation of scratches that are attributed to the excessive mean particle size of the abrasive are prevented. When the mean particle size is less than or equal to 0.3 rum in the case with silicon dioxide, less than or 30 equal to 1.5 um in the case with alumina, zirconium oxide, titanium oxide, silicon nitride, or silicon carbide, and less than or equal to 0.45 Am in the case with cerium oxide, increase of the surface roughness of the polished surface is more reliably prevented.
: e Be. I. en: À r C:.:À:::::
When the amount of the abrasive included in the polishing composition according to the first embodiment is greater than or equal to 0.1 weight %, decrease of the polishing speed that is attributed to lack of content of the abrasive is prevented.
5 When the content of the abrasive is greater than or equal to 1 weight I; , decrease of the polishing speed is more reliably prevented. When the amount of the abrasive included in the polishing 10 composition according to the first embodiment is less than or equal to 40 weight %, increase of the viscosity, clogging of the polishing pad, and surface defects of the polished surface that are attributed to the excessive content of the abrasive are prevented. When the content is less than or equal to 25 15 weight fir increase of the viscosity, clogging of the polishing pad, and surface defects of the polished surface are more reliably preventecl. Increase of the viscosity decreases the handleability of the polishing composition.
20 When the polishing accelerator is malic acid, glycolic acid, succinic acid, or citric acid, the polishing speed is increased and formation of surface defects on the polished surface is suppressed. When the polishing accelerator is succinic acid, the polishing speed further increases and 25 formation of surface defects on the polished surface is more reliably suppressed.
When the amount of t}-e polishing accelerator included in the polishing composition according to the first erodiment is 30 greater than or equal to 0.01 weight Qu, deareasr of the polishing speed that is attributed to lack of content of the polishing accelerator is prevented When the content is greater than or equal Lo 0 1 weight %, decrease of the polishing speed iEi more rel iably prevented When the content 35 is greater than or equal to 0 weight I-, decrease of the
l'# t:':! l.. il 1 I _
polishing speed is prevented substantially without fail.
When the amount of the polishing accelerator included in the polishing composition according to the first embodiment is 5 less than or equal to 25 weight %, increase of cost that is attributed to excessive content of the polishing accelerator is prevented. When the content is less than or equal to 20 weight %, increase of cost is more reliably prevented. When the content is less than or equal to 10 weight %, increase of 10 cost is prevented substantially without fail.
When the pH of the polishing composition according to the first embodiment is greater than or equal to 2, a polishing I machine used for polishing is prevented form being corroded by 15 the polishing composition.
When the pH of the polishing composition according to the first embodiment is less than or equal to 7, decrease of the polishing speed, increase of the surface roughness of the 20 polished surface, and formation of scratches on the polished surface that are attributed to the polishing composition being.
alkaline are prevented. i A second embodiment of the present invention will now be 25 described. i A polishing composition according to the second embodiment is formed of a polymer, which has monomer unit derived from isoprene sulfonic acid or its salt, abrasive, polishing accelerator, and water.
The polymer is serves as the inhibitor, which prevents the peripheral portion of the surface of the substrate from being excessively polished, as compared to a portion of the 35 surface other than the peripheral portion, when the surface of
,! ' : r the substrate of the magnetic disk is polished using the polishing composition according to the second embodiment.
The polymer may include a monomer unit that is not 5 derived from isoprene sulfonic acid or its salt. An example of a monomer unit that is not derived from isoprene sulfonic acid or its salt is a monomer unit that is derived from isoprene or acrylic acid.
10 The amount of polymer included in the polishing composition according to the second embodiment is preferably between 0.001 and 1 weight %, more preferable is between 0.005 and 0.5 weight %, and most preferable is between 0.005 and 0.3 weight %.
The polishing composition according to the second embodiment is prepared by mixing the polymer, the abrasive, and the polishing accelerator with water to be dissolved and dispersed. The pH of the polishing composition according to the second embodiment is preferably between 2 and 7.
The compound represented by the formula (1) that is 25 included in the polishing composition according to the first embodiment is replaced with the polymer in the polishing composition according to the second embodiment. Therefore, the polishing composition according to the second embodiment provides the following advantages in addition to the 30 advantages of the first embodiment.
When the surface of the substrate for a magnetic disk is polished using the polishing composition according to the second embodiment, the peripheral portion of the surface of 35 the substrate is prevented from being excessively polished as
À 1 1
I I d I I I t I I 1 1 1 1 1
1 1 1 1 1
À 1 8
compared to a portion of the surface other than the peripheral portion. The polishing composition of the second embodiment suppresses excessive polish of the peripheral portion of the surface of the substrate since the polishing composition 5 includes the polymer. The polymer reduces friction caused between the substrate and the polishing pad used for polishing the substrate in the same manner as the compound represented by the formula (1). It is presumed that the reduction of friction suppresses excessive polish of the peripheral portion 10 of the surface of the substrate.
When the amount of the polymer included in the polishing composition according to the second embodiment is greater than or equal to 0.001 weight %, the polishing composition that can 15 sufficiently suppress excessive polish of the peripheral portion of the surface of the substrate is provided. The polishing composition also permits the surface of the substrate to be polished at a sufficient polishing speed.
When the polymer content is greater than or equal to 0.005 20 weight %, excessive polish of the peripheral portion of the surface of the substrate is effectively suppressed.
When the amount of the polymer included in the polishing composition according to the second embodiment is less than or 25 equal to 1 weight %, extreme decrease of the polishing speed and increase of cost due to adding excessive polymer are prevented. When the polymer content is less than or equal to 0.5 weight %, extreme decrease of the polishing speed is more reliably prevented. When the polymer content is less than or 30 equal to 0.3 weight %, extreme decrease of the polishing speed is prevented substantially without fail.
It should be apparent to those skilled in the art that the present invention may be embodied in many other specific 35 forms without departing from the spirit or scope of the
r I À À À 1
1 1 1 À 1
, 1 1: C À 1
invention. Particularly, it should be understood that the invention may be embodied in the following forms.
The polishing composition according to the first 5 embodiment may further include the polymer, which has a monomer unit derived from isoprene sulfonic acid or its salt.
The polishing composition according to the second embodiment may further include the compound represented by the 10 formula (1).
The polishing composition according to the first and second embodiments may further include additives generally included in the conventional polishing composition. Examples 15 of the additives are: celluloses, such as cellulose, carboxymethyl cellulose, and hydroxyethyl cellulose) water-
soluble alcohols, such as ethanol, propanol, and ethylene glycol; surfaceactive agent, such as sodium alkyl benzene sulfonate, and formalin condensate of naphthalenesulfonic 20 acid; poly organic anion material, such as lignin sulfonate, and polyacrylate; water-soluble polymer (emulsifier), such as polyvinyl alcohol; chelating agent, such as dimethylglyoxime, dithizone, oxine, acetylacetone, EDTA, and NTA; disinfectant, such as sodium alginate, and potassium bicarbonate; inorganic 25 salts, such as aluminum sulfate, nickel sulfate, aluminum nitrate, nickel nitrate, iron nitrate, and ammonium molybbate; higher fatty acid amines; sulfonate; antirust; and water-
soluble processed oils.
30 The polishing composition according to the first and second embodiments may be stock solution, which includes higher concentration of the compound represented by the formula (1) or the polymer, the abrasive, and the polishing accelerator. The stock solution is diluted with water before 35 being used for polishing. In this case, the handleability of
l l À À 1 I
me, t 1 8
À 1
the polishing composition during storage and transportation is improved. The polishing composition according to the first and -
5 second embodiments may be used for polishing a polished member other than the substrate for a magnetic disk. In this case, a portion of a polished surface in the vicinity of its edge is prevented from being excessively polished as compared to the polished surface other than the portion in the vicinity of the 10 edge.
The present invention will now be described in more detail with reference to examples and comparative examples.
15 The abrasive, which is alumina of 20 weight % (the mean particle size is 0.8 m), and the polishing accelerator and inhibitor, which are shown in the following table 1, are mixed with ion exchanged water to prepare polishing compositions of examples 1 to 31 and comparative examples 1 to 4. The top 20 surface and the under surface of a substrate for a magnetic disk are polished with the polishing composition of each example under the following polishing conditions.
Substrate: Substrate of 3.5". 95 mm) plated with 25 electroless nickel phosphorous plating Polishing Machine: Double side polishing machine having upper and lower machine platens of size 720 mm Polishing Pad: BELLATRIX N0048 manufactured by Kanebo Ltd. Polishing Load: 100 g/cm2 (. 10 kPa) 30 Rotational Speed of Upper Platen: 24 rpm Rotational Speed of Lower Platen: 16 rpm Supply Amount of Polishing Composition: 150 ml/min Polishing Amount: 3 Am in total of both surfaces of substrate 35 A value Vr of a roll-off is measured by a MicroXAM
l l l À 1 À À 1 manufactured by ADE Phase Shift (U.S.) at the peripheral portion of the substrate after the substrate is polished. The measured value Vr is substituted in the following equation (2) to obtain the decreasing rate of the roll-off. If the 5 decreasing rate of the roll-off is greater than 20 %r it is evaluated as by, if the decreasing rate of the roll-off is greater than 10 % and less than or equal to 20 %, it is evaluated as O. if the decreasing rate of the roll-off is greater than 0 % and less than or equal to 10 %, it is 10 evaluated as it, if the decreasing rate of the roll-off is less than or equal to 0 %, it is evaluated as X. The result is shown in the column of "roll-off" in the following table 1.
Decreasing Rate of Roll-Off [%] = (1 - Vr/Vr of 15 Comparative Example 1) x 100 (2) The roll-off is one of references showing the degree of excessive polish at the peripheral portion of the surface of the substrate. The roll-off is defined as follows in this 20 specification. As shown in Fig. l(a), a point on the surface
of the substrate located inward from the peripheral edge of the substrate by 0.30 mm is assumed to be a point A, and a point on the surface of the substrate located inward from the peripheral edge of the substrate by 3. 80 mm is assumed to be a 25 point B. The roll-off is defined as the maximum distance between a cross-sectional curved line, which connects the points A and B. and a straight line, which connects the points A and B. 30 A value Vd of a dub-off is measured by the MicroXAM at the peripheral portion of the substrate after polishing the substrate. The measured value Vd is substituted in the following equation (3) to obtain the decreasing rate of the dub-off. If the decreasing rate of the dub-off is greater 35 than 20 %, it is evaluated as by, if the decreasing rate of
l l l t À r I À À À r I the dub-off is greater than 10 % and less than or equal to 20 %, it is evaluated as O. if the decreasing rate of the dub-
off is greater than 0 % and less than or equal to 10 %, it is evaluated as it, if the decreasing rate of the dub-off is less 5 than or equal to 0 %, it is evaluated as X The result is shown in the column of "dub-off" in the following table 1.
Decreasing Rate of Dub-Off [%] = (1 - Vd/Vd of Comparative Example 1) x 100 (3) The dub-off is one of the references showing the degree of excessive polish at the peripheral portion of the surface of the substrate. The dub-off is defined as follows in this specification. As shown in Fig. l(b), a point on the surface
15 of the substrate located inward from the peripheral edge of the substrate by 9.30 mm is assumed to be a point C, a point on the surface of the substrate located inward from the peripheral edge of the substrate by 3.30 mm is assumed to be a point D, and a point on the surface of the substrate located 20 inward from the peripheral edge of the substrate by 0.30 mm is assumed to be a point E. A line L is described from a cross-
sectional curved line, which connects the points C and D, by the method of least squares. A point located on the line L inward from the peripheral edge of the substrate by 0.30 mm is 25 assumed to be a point E'. The dub-off is defined as the distance between the points E and E'.
The polishing speed of when polishing the substrate is obtained in accordance with the following equation (4). If 30 the obtained polishing speed is greater than or equal to 0.70 m/min, it is evaluated as Ad, if the polishing speed is greater than or equal to 0.65 um/min and is less than 0.70 um/min, it is evaluated as O. if the polishing speed is greater than or equal to 0.60 m/min and is less than 0.65 35 m/min, it is evaluated as it, if the polishing speed is less
: 1 1 ' than 0.60,um/min, it is evaluated as X The result is shown in the column of "polishing speed" in the following table 1.
Polishing Speed [pm/mind = Weight Diminution [g] of 5 Substrate By Polish. (Polished Area [cm2] of Substrate x Density of Nickel Phosphorous Plating [g/cm3] x Polishing Time [min]) x 10000 (4) Table 1
=o __ _ v -:. LL O O c Q_ _ t3 _ _ O Example 1 succinic acid 0. 125 A 9SOO 0.002b 3.5 A Example 2 succinic acid 0.25 A 9SOO 0.0125 3. 5 O O O Example 3 succinic acid 0.25 A 9500 0.0025 3.5 () O _ Example 4 succinic acid 0.25 A 9SOO 0.025 3.5 () Example 5 succinic acid 0. 375 A 9SOO 0.0025 3.5 () A Example 6 succinic acid 0.25 A 30000 0.0025 3. 5 O () O Example 7 succinic acid 0.25 A 8500 0.0025 3.5 O O Example 8 malic acid 0.25 A 9500 0.0025 3.0 () Example 9 citric acid 0. 25 A 9500 0.0025 2.4 O O Example 10 glycolic acid 0.5 A 9500 0.0025 2.9 Example 11 maleic acid 0.25 A 9500 0.0025 2.2 0 Example 12 itaconic acid 0.25 A 9500 0.0025 2.9 OO Example 13 malonic acid 0.25 A 9500 0. 0025 2.4 Example 14 iminodlacetic 0.25 A 9SOO 0.0025 2.8 Example 15 succinic acid 0.25 A 9500 0.0025 3.1 O O Example 16 carboxyethyl 0. 25 A 9500 0.0025 3.2 O O thiosucclcate _ Example 17 aluminum 1 A 9500 0. 0025 2.8 Example 18 succinic acid 0.125 B1 180 0.0025 3.5 Example 19 succinic acid 0.25 B1 180 0.0025 3.5 Example 20 succinic acid 0. 375 B1 180 0.0025 3.5 _ _ _ Example 21 succinic acid 0.25 B1 180 0.0075 3. 5 () Example 22 succinic acid 0.25 B1 180 0.02 3.5 Example 23 succinic acid 0.25 B2 90 0.0025 3.5
l ( I; t: Table 1: continued = cmm 0 _ __ = i S Example 24 malic acid 0. 25 B1 180 0.0025 3.0 O Example 25 citric acid 0.25 B1 180 0.0025 2.4 O O Example 26 glycolic acid 0.5 B1 180 0.0025 2.9 () O Example 27 maleic acid 0.25 Bl 180 0.0025 2.2 O _. _ Example 28 itaconic acid 0.25 B1 180 0. 0025 2.9 O O Example 29 malonic acid 0.25 B1 180 0.0025 2.4 - - O Example 30 iminodiacetic 0.25 B1 180 0.0025 2.8 Example 31 aluminum 1 B1 180 0. 00?5 3.S () () O nitrate. _ __ Comparative Example 1 succinic acid 0.25 _ _ _ 3.5 x x O Comparative Example 2 malic acid 0.25 _ 3.0 x x Comparative Example 3 citric acid 0.25 _ _ _.4 x x I _ _
Comparative glycolic acid 0.5 1 _ _ _ 2.9 x x In the column of the type of the inhibitor shown in the table 1, the letter A represents the compound expressed by the 5 formula (1), the letter B1 represents a copolymer of isoprene sulfonic acid and acrylic acid, and the letter B2 represents a copolymer of isoprene sulfonic acid and isoprene.
Values shown in the column of the viscosity of the 10 inhibitor are values obtained by measuring the viscosity of water solution of inhibitor that is prepared to have active constituent of 30 weight % and maintained at 25 degrees Celsius using BH type rotary viscometer. When measuring the viscosity of the compound represented by the formula (1), a 15 No. 6 rotor is used and the rotational speed of the No. 6 rotor is 10 rpm. When measuring the viscosity of the
l , 1 l copolymer of isoprene sulfonic acid and acrylic acid, and the copolymer of isoprene sulfonic acid and isoprene, a No. 3 rotor is used and the rotational speed of the No. 3 rotor is 62.5 rpm.
The present examples and embodiments are to be considered as illustrative and not restrictive and the invention is not to be limited to the details given herein, but may be modified within the scope and equivalence of the appended claims.
Claims (8)
1. A polishing composition, wherein the polishing composition includes abrasive, a polishing accelerator, and 5 water, the polishing composition characterized by said polishing composition further including a compound, which is represented by a general formula as follows: O O X-(C-NH-Y-NH--C-(O-CH2-CH2)n-Z)m wherein X represents a residue of polyether polyol, 10 wherein m represents a number equal to the number of hydroxyl groups in one molecule of the polyether polyol, wherein Y represents a divalent hydrocarbon group, wherein Z represents a residue of a monovalent compound, which has an active hydrogen atom, and wherein n represents an integer number 15 equal to or greater than three.
2. The polishing composition according to claim 1, characterized in that the amount of the compound included in the polishing composition is between 0.001 and 1 weight %.
3. A polishing composition, wherein the polishing composition includes abrasive, a polishing accelerator, and water, the polishing composition is characterized by said polishing composition further including a polymer having a 25 monomer unit derived from isoprene sulfonic acid or its salt.
4. The polishing composition according to claim 3, characterized in that the amount of the polymer included in the polishing composition is between 0.001 and 1 weight %.
5. The polishing composition according to claim 3 or 4, characterized in that the polymer is a copolymer of isoprene sulfonic acid and acrylic acid or a copolymer of isoprene
À:'.: À. À À
À À À À
Àe À À * sulfonic acid and isoprene.
6. A polishing composition, wherein the polishing composition includes abrasive, a polishing accelerator, and water, the polishing composition characterized by said polishing composition further including: s a compound, which is represented by a general formula as follows: O O 11 11 X(CNHYNHC(OClI2c}I2)nz)m lo wherein X represents a residue of polyether polyol, wherein m represents a number equal to the number of hydroxyl groups in one molecule of the polyether polyol, wherein Y represents a divalent hydrocarbon group, wherein Z represents a residue of a monovalent compound, which has an active hydrogen atom, and wherein n represents an integer number equal to or greater than three; and 5 polymer having a monomer unit derived from isoprene sulfonic acid or its salt.
7. The polishing composition according to any one of claims 1 to 6, characterized in that the polishing composition is used for polishing a surface of a substrate for a magnetic disk.
8. A polishing composition substantially as hereinbefore described with 20 reference to the accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0522145A GB2418205B (en) | 2002-05-30 | 2003-05-30 | Polishing composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002157964A JP4095833B2 (en) | 2002-05-30 | 2002-05-30 | Polishing composition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB0312182D0 GB0312182D0 (en) | 2003-07-02 |
| GB2390370A true GB2390370A (en) | 2004-01-07 |
| GB2390370B GB2390370B (en) | 2006-10-11 |
Family
ID=19194884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0312182A Expired - Fee Related GB2390370B (en) | 2002-05-30 | 2003-05-30 | Polishing composition |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4095833B2 (en) |
| CN (2) | CN101012313B (en) |
| GB (1) | GB2390370B (en) |
| MY (1) | MY137251A (en) |
| TW (1) | TWI307359B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2401370A (en) * | 2003-05-09 | 2004-11-10 | Fujimi Inc | Polishing composition |
| GB2421955A (en) * | 2004-12-13 | 2006-07-12 | Kao Corp | Polishing composition for glass substrate |
| EP1760099A2 (en) * | 2005-08-31 | 2007-03-07 | Fujimi Incorporated | Polishing composition and polishing method |
| GB2433516A (en) * | 2005-12-22 | 2007-06-27 | Kao Corp | Polishing composition for glass substrate |
| EP2851937A4 (en) * | 2012-05-18 | 2016-01-13 | Fujimi Inc | Polishing composition, polishing method using same, and method for producing substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050139119A1 (en) * | 2003-12-24 | 2005-06-30 | Rader W. S. | Polishing composition |
| WO2006025572A1 (en) * | 2004-08-30 | 2006-03-09 | Showa Denko K.K. | Glass substrate for magnetic recording medium and magnetic recording medium |
| JP2006099949A (en) * | 2004-08-30 | 2006-04-13 | Showa Denko Kk | Glass substrate for magnetic recording medium and magnetic recording medium |
| JP4637003B2 (en) * | 2005-11-11 | 2011-02-23 | 花王株式会社 | Manufacturing method of hard disk substrate |
| JP2007063440A (en) * | 2005-08-31 | 2007-03-15 | Fujimi Inc | Polishing composition and polishing method |
| TWI402335B (en) * | 2006-09-08 | 2013-07-21 | Kao Corp | Polishing composition |
| KR101353315B1 (en) * | 2013-08-07 | 2014-01-21 | 소문식 | Composition for cutting wheel and cutting wheel comprising the same |
| CN112384591A (en) * | 2018-07-04 | 2021-02-19 | 住友精化株式会社 | Polishing composition |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2354525A (en) * | 1999-09-27 | 2001-03-28 | Fujimi America Inc | Polishing compositions for magnetic disks |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2590790B2 (en) * | 1988-04-15 | 1997-03-12 | 日本合成ゴム株式会社 | Method for producing conjugated diene sulfonated polymer |
| JP3891604B2 (en) * | 1996-04-17 | 2007-03-14 | 花王株式会社 | Abrasive composition and polishing method using the same |
| SG78405A1 (en) * | 1998-11-17 | 2001-02-20 | Fujimi Inc | Polishing composition and rinsing composition |
| JP4250831B2 (en) * | 1999-06-23 | 2009-04-08 | Ｊｓｒ株式会社 | Cleaning fluid for semiconductor parts |
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| JP4273475B2 (en) * | 1999-09-21 | 2009-06-03 | 株式会社フジミインコーポレーテッド | Polishing composition |
| JP4238951B2 (en) * | 1999-09-28 | 2009-03-18 | 株式会社フジミインコーポレーテッド | Polishing composition and method for producing memory hard disk using the same |
| US6454820B2 (en) * | 2000-02-03 | 2002-09-24 | Kao Corporation | Polishing composition |
| JP2003313542A (en) * | 2002-04-22 | 2003-11-06 | Jsr Corp | Aqueous dispersion for chemomechanical polishing use |
-
2002
- 2002-05-30 JP JP2002157964A patent/JP4095833B2/en not_active Expired - Lifetime
-
2003
- 2003-05-29 MY MYPI20031978A patent/MY137251A/en unknown
- 2003-05-30 TW TW092114853A patent/TWI307359B/en not_active IP Right Cessation
- 2003-05-30 CN CN200610103020.7A patent/CN101012313B/en not_active Expired - Fee Related
- 2003-05-30 CN CNB031407102A patent/CN100347227C/en not_active Expired - Fee Related
- 2003-05-30 GB GB0312182A patent/GB2390370B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2354525A (en) * | 1999-09-27 | 2001-03-28 | Fujimi America Inc | Polishing compositions for magnetic disks |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2401370A (en) * | 2003-05-09 | 2004-11-10 | Fujimi Inc | Polishing composition |
| GB2401370B (en) * | 2003-05-09 | 2007-12-05 | Fujimi Inc | Polishing composition |
| GB2421955A (en) * | 2004-12-13 | 2006-07-12 | Kao Corp | Polishing composition for glass substrate |
| GB2421955B (en) * | 2004-12-13 | 2009-10-14 | Kao Corp | Polishing composition for glass substrate |
| EP1760099A2 (en) * | 2005-08-31 | 2007-03-07 | Fujimi Incorporated | Polishing composition and polishing method |
| EP1760099A3 (en) * | 2005-08-31 | 2010-12-15 | Fujimi Incorporated | Polishing composition and polishing method |
| GB2433516A (en) * | 2005-12-22 | 2007-06-27 | Kao Corp | Polishing composition for glass substrate |
| GB2433516B (en) * | 2005-12-22 | 2010-11-03 | Kao Corp | Polishing composition for glass substrate |
| EP2851937A4 (en) * | 2012-05-18 | 2016-01-13 | Fujimi Inc | Polishing composition, polishing method using same, and method for producing substrate |
| US9422454B2 (en) | 2012-05-18 | 2016-08-23 | Fujimi Incorporated | Polishing composition, polishing method using same, and method for producing substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| MY137251A (en) | 2009-01-30 |
| JP2003342556A (en) | 2003-12-03 |
| CN100347227C (en) | 2007-11-07 |
| JP4095833B2 (en) | 2008-06-04 |
| GB0312182D0 (en) | 2003-07-02 |
| CN101012313A (en) | 2007-08-08 |
| TWI307359B (en) | 2009-03-11 |
| CN1461766A (en) | 2003-12-17 |
| GB2390370B (en) | 2006-10-11 |
| TW200400250A (en) | 2004-01-01 |
| CN101012313B (en) | 2010-12-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20100530 |