200307322 玖、發明說明 (發明說明應敘明：發明所屬之技術領域、先前技術、內容、實施方式及圖式簡單說明) 【發明所屬之技術領域】 本發明係有關於一種適用於用以製造半導體裝置所採用 之半導體基板、半導體晶片、以及半導體裝置之製造方法。 【先前技術】 在半導體裝置之製造程序中，一般係將多數之功能元件 形成在砂晶圓等半導體基板上後，便藉由鑽石刀片而將半 導體基板於每個功能元件上進行切斷（切削加工）、進以獲 得半導體晶片。 此外’亦具有對於半導體基板而將具有吸收性之雷射光 照射至半導體基板，且藉由加熱熔融而切斷半導體基板（加 熱熔融加工）以取代藉由上述鑽石刀片之切斷。 【發明內容】 不過’上述之藉由切削加工或加熱熔融加工所達成之半 導體基板之切斷係在將功能元件形成在半導體基板上後才 進行’因此’例如在切斷時會有因產生之熱所造成之原因 而有使功能元件遭到破壞之虞。 在此’本發明係爲有鑒於此種事件所提出之物，其目的 在於提供一種半導體基板、半導體晶片、以及半導體裝置 之製造方法，係可防止在半導體裝置之製造程序中藉由切 斷而使功能元件受到破壞。 爲了達成上述之目的，有關本發明之半導體基板係爲， -6 - 200307322 其特徵在於··藉由雷射光之照射而使得被形成在該雷射光 之聚光點位置之多光子吸收所造成之改質區域，而使切斷 起點區域形成在內部。 若藉由此種半導體基板時，藉由雷射光之照射而使得被 形成在該雷射光之聚光點位置之多光子吸收所造成之改質 區域，係被形成在半導體基板之內部。亦即，該改質區域 係爲，雷射光之聚光點爲被聚合於半導體基板之內部，藉 由在該聚光點位置產生所謂的多光子吸收之現象，而被形 成在半導體基板之內部。在發生該多光子吸收而獲得之雷 射光之照射中，因爲在半導體基板之表面上幾乎未吸收有 雷射光，故而半導體基板之表面係無法被熔融。從而，在 半導體裝置之製造程序中，係可將功能元件形成在如同習 知之半導體基板之表面上。再者，若藉由此種半導體基板 時，爲藉由改質區域而使切斷起點區域形成在半導體基板 之內部。當使改質區域形成在半導體基板之內部後，將改 質區域作爲起點、且以較小之力而使裂痕產生在半導體基 板上，因此，沿著切斷起點區域係可藉由較高精度來切割、 切斷半導體基板。從而，在半導體裝置之製造程序中，係 形成爲無須如習知之功能元件形成後之切削加工或加熱熔 融加工’而可防止因半導體基板之切斷所造成之功能元件 之破壞。 在此，所謂的聚光點係爲雷射光已聚光之處。此外，所 謂的功能元件係意味著光二極體等受光元件或雷射二極體 等發光元件、或是作爲電路所形成之電路元件等。再者， -7- 200307322 所謂的切斷起點區域係意味著在使半導體基板切斷時，形 成爲切斷之起點的區域。從而，切斷起點區域係爲，在半 導體基板中所預定切斷之切斷預定部。並且，切斷起點區 域係爲，具有使改質區域形成爲連續狀所形成之情況、亦 具有使改質區域形成爲斷續狀所形成之情況。 此外，有關本發明之半導體基板係爲，其特徵在於：以 在聚光點中之峰値功率密度爲1 X 1 08(w/cm2)以上、且脈衝 幅度爲1 // s以下之條件下，藉由其雷射光照射而包含有被 形成在該雷射光聚光點位置之熔融處理區域的改質區域， 而使切斷起點區域形成在內部。 若藉由此種半導體基板時，以在聚光點中之峰値功率密 度爲lx 108(W/cm2)以上、且脈衝幅度爲l//s以下之條件 下，藉由其雷射光照射而包含有被形成在該雷射光聚光點 位置之熔融處理區域的改質區域，爲被形成在半導體基板 之內部。亦即，此種熔融處理區域係爲，雷射光之聚光點 爲被聚合於半導體基板之內部，藉由在該聚光點位置產生 所謂的多光子吸收之現象、且於局部受到加熱，而被形成 在半導體基板之內邰。此種熔融處理區域係爲上述改質區 域之一例，因此，即使藉由此種半導體基板，亦可在半導 體裝置之製造程序中將功能元件形成在半導體基板之表面 上、且可防止在功能元件形成後因半導體基板之切斷所造 成之功能元件之破壞。 此外，有關本發明之半導體基板係爲，其特徵在於：藉 由以雷射光之照射而被形成在該雷射光之聚光點位置之改 -8 - 200307322 質區域，而使切斷起點區域形成在內部。並且，此種改質 區域亦具有已熔融處理之區域的情況。 若藉由此種半導體基板時，藉由與上述有關本發明之半 導體基板相同的理由，在半導體裝置之製造程序中，係可 將功能元件形成在半導體基板之表面上，且可防止在功能 元件形成後中之半導體基板之切斷所造成之功能元件之破 壞。不過，改質區域之形成係具有起因於多光子之吸收的 情況、亦具有起因於其他原因之情況。 此外，有關本發明之半導體基板係爲，其特徵在於：具 有沿著外緣之外緣部，在外緣部之內側部分之內部係以改 質區域而形成有切斷起點區域。 若藉由此種半導體基板時，藉由與上述有關本發明之半 導體基板相同的理由，在半導體裝置之製造程序中，係可 將功能兀件形成在半導體基板之表面上，且可防止在功能 元件形成後中之半導體基板之切斷所造成之功能元件之破 壞。此外，藉由將切斷起點區域形成在半導體基板中之外 緣部之內側部分的內部，而在半導體基板之搬送程序或用 以形成功能元件之加熱程序等之中，可防止半導體基板之 意外的切斷。 此時，切斷起點區域爲形成格子狀，在以切斷起點區域 所分隔之區隔部中，在位於外緣部側之區隔部之角部分上 係以交叉、形成切斷起點區域者爲佳。藉此，即使在位於 外緣部側之區隔部的角部分，亦可確實、且良好地進行與 區隔部之其他部分相同的切斷起點區域之形成，而可防止 -9 一 200307322 在切斷半導體基板時產生在對應於該區隔部之半導體晶片 上有碎屑或裂化之產生。在此，所謂的格子狀係爲，不限 於延伸於正交兩方向之切斷起點區域爲進行交叉的情況， 亦意味著有延伸於相異之兩方向之切斷起點區域爲進行交 叉的情況。此外，所謂的交叉係爲，不限於直接交錯沿著 相異兩方向之切斷起點區域的情況，亦意味著有立體交錯 沿著相異兩方向之切斷起點區域的情況（亦即，爲具有扭轉 之關係的情況）。 此外，在半導體基板之表面上，係以設有用以識別被形 成在半導體基板內部之切斷起點區域之位置的識別圖型爲 佳。切斷起點區域雖是被形成在半導體基板之內部，不過， 因爲用以識別切斷起點區域之位置的識別圖型爲被設在半 導體基板之表面，故而在半導體裝置之製造程序中，爲將 被形成在半導體基板之內部的切斷起點區域之位置依據辨 識圖型來掌握，而可進行功能元件之圖型製作（patterning) 或半導體基板之切斷等。 爲了達成上述目的，有關本發明之半導體晶片係爲，將 聚光點聚合至半導體基板之內部、且藉由照射雷射光而在 半導體基板之內部以多光子之吸收而形成改質區域，將該 改質區域作爲切斷起點區域，而具有以進行半導體基板之 切斷所形成、且在藉由切斷而形成之切斷面上爲具有改質 區域。 若藉由此種半導體晶片時，因以改質區域而使切斷面受 到保護，故可防止在切斷面上之碎屑（c h i p p i η g )或裂化之產 -10- 200307322 生◦再者，半導體晶片之周緣部在藉由切斷面所包圍的情 況下’半導體晶片之周緣部形成爲藉由改質區域所包圍， 藉此’可使半導體晶片之抗折強度提昇。 此外，有關本發明之半導體晶片係爲，其特徵在於：將 聚光點聚合至半導體基板之內部，在聚光點中，在以峰値 功率密度爲lx 1〇8(W/cm2)以上、且脈衝幅度爲1//s以下 之條件下照射雷射光，藉此而在半導體基板之內部形成包 含有熔融處理區域之改質區域，將包含有該熔融處理區域 之改質區域作爲切斷起點區域而藉由進行半導體基板之切 斷所形成，在以切斷所形成之切斷面上，爲具有包含熔融 處理區域之改質區域。 在此種半導體晶片中之熔融處理區域係爲上述改質區域 之一例，因此，即使藉由此種半導體晶片，除可防止在切 斷面上之碎屑或裂化之發生，同時在半導體晶片之周緣部 爲以切斷面所包圍的情況下，係可使半導體晶片之抗折強 度提昇。 此外，有關本發明之半導體晶片係爲，其特徵在於：將 聚光點聚合於半導體基板之內部，且藉由照射雷射光而將 改質區域形成在半導體基板之內部，將該改質區域作爲切 斷起點區域而以進行半導體基板之切斷所形成，在以切斷 所形成之切斷面上爲具有改質區域。而此種改質區域係亦 具有爲已經過熔融處理之區域的情況。 若藉由此種半導體晶片時’藉由與有關於上述本發明之 半導體晶片相同的理由’係可防止在切斷面上之碎屑或裂 -11- 200307322 化之發生，同時在半導體晶片之周緣部爲以切斷面所包圍 的情況下，係可使半導體晶片之抗折強度提昇。不過，改 質區域之形成係具有起因於多光子之吸收的情況、亦具有 起因於其他原因之情況。 此外，有關本發明之半導體晶片係爲，其特徵在於：包 含熔融處理區域之改質區域係被形成在端面。 若藉由此種半導體晶片時，係可防止以半導體基板之切 斷而造成在切斷面等端面上之碎屑或裂化之產生，同時， 若將半導體晶片之周緣部以改質區域包圍時，係可使半導 體晶片之抗折強度提昇。 藉由上述，有關本發明之半導體裝置之製造方法係可採 用具有下列程序之構造，即：將聚光點聚合於半導體基板 之內部且照射雷射光，在半導體基板之內部以多光子吸收 而形成改質區域，藉由此種改質區域，沿著半導體基板之 切斷預定線，由半導體基板之雷射光射入面而將切斷起點 區域形成在所定距離內側之程序；在形成切斷起點區域之 程序後，將功能元件形成在半導體基板之程序；在形成功 能元件之程序後，沿著切斷起點區域而切斷半導體基板之 程序。並且，此種改質區域亦具有已經過熔融處理之區域 的情況。 此外，有關本發明之半導體裝置之製造方法係可採用具 有下列程序之構造，即：將聚光點聚合於半導體基板之內 部且照射雷射光，將改質區域形成在半導體基板之內部， 藉由此種改質區域，沿著半導體基板之切斷預定線，由半 -1 2 - 200307322 導體基板之雷射光射入面而將切斷起點區域形成 離內側之程序；在形成切斷起點區域之程序後， 件形成在半導體基板之程序；在形成功能元件之 沿著切斷起點區域而切斷半導體基板之程序。並 改質區域亦具有已經過熔融處理之區域的情況。 【實施方式】 以下，連同圖式而針對本發明之較佳實施例進 明。在構成有關本實施例之半導體基板及半導體 係使用如下所述之雷射工方法，係將聚光點聚合 基板之內部而照射雷射光，在半導體基板之內部 子吸收而形成改質區域。在此，於最初針對此種 方法、特別是針對多光子吸收來進行說明。 當光子的能量h v爲小於材料吸收之頻帶隙Eq 成爲光學性的透明狀。藉此，於材料之吸收所產 係爲h v > Ec。不過，即使爲呈光學性的透明狀 光之強度爲相當大時，係以nh z； > E。之條件（n = 2 而於材料中產生吸收。且將此種現象稱爲多光子 脈衝波的情況下，雷射光之強度爲以雷射光之聚 値功率密度（W / c m2)所決定，例如，峰値功率密度 1 〇8(W/cm2)以上之條件下產生多光子吸收。峰値 係藉由（在聚光點中之每一雷射光之1脈衝的能邏 光之射束點斷面積X脈衝幅度）所求出。此外，在 情況下’雷射光之強度爲以雷射光之聚光點的 (W/cm2)來決定。 在所定距 將功能元 程序後， 且，此種 行詳細說 晶片時， 於半導體 藉由多光 雷射加工 時，便形 生的條件 ，當雷射 、3、4 …） 吸收。在 光點的峰 爲以lx 功率密度 t ) + (雷射 連續波的 電場強度 200307322 參照第1至6圖，針對有關利用此種多光子吸收之本實 施例的雷射加工原理來進行說明。第1圖係爲雷射加工中 之半導體基板1之平面圖，第2圖係沿著於第1圖所示之 半導體基板1之II-II線剖面之斷面圖，第3圖係爲雷射加 工後之半導體基板1之平面圖，第4圖係沿著於第3圖所 示之半導體基板1之IV-IV線剖面之斷面圖，第5圖係沿 著於第3圖所示之半導體基板之V-V線剖面之斷面圖，第 6圖係被切斷之半導體基板1之平面圖。 如第1圖及第2圖所示，在半導體基板1之表面3上爲 具有應切斷半導體基板1之所希望的切斷預定線5。切斷 預定線5係爲呈直線狀延伸之假想線（亦可將在半導體基板 1上實際將線延伸者作爲切斷預定線5)。有關本實施例之 雷射加工係爲，在以產生多光子吸收之條件下將聚光點P 聚合在半導體基板1之內部，且將雷射光L照射至半導體 基板1而形成改質區域7。此外，所謂的聚光點係爲雷射 光L已聚光之處。 藉由將雷射光L沿著切斷預定線5 (亦即爲沿著箭頭方向A) 而使其呈相對性地移動，而使聚光點P沿著切斷預定線5 移動。藉此，如第3圖至第5圖所示，改質區域7爲沿著 切斷預定線5之而僅被形成在半導體基板1之內部’在該 改質區域7形成所具有之切斷起點區域（切斷預定部）9。有 關本實施例之雷射加工方法係爲，半導體基板1係不僅是 藉由吸收雷射光L而使半導體基板1發熱、形成改質區域 7。而是在半導體基板1上使雷射光L透過、在半導體基板 -14 — 200307322 1之內部上使多光子吸收產生而形成改質區域7。藉此，因 在半導體基板1之表面3上幾乎未吸收有雷射光L，故而 在半導體基板1之表面3係不會產生熔融。 在半導體基板1之切斷中，若在切斷處上具有起點時半 導體基板1便由該起點開始分割，因此可如第6圖所示， 以較小之力來切斷半導體基板1。藉此，可在半導體基板1 之表面3上不會產生不必要的分割而可切斷半導體基板1。 此外，在將切斷起點區域作爲起點之半導體基板之切斷 方面，係考慮有以下兩點。第1，在切斷起點區域形成後， 藉由在半導體基板上施加有人爲力量而將切斷起點區域作 爲起點、分割半導體基板，進而具有使半導體基板切斷之 情況。此係例如爲半導體基板之厚度爲較大的情況下之切 斷。所謂的施加人爲力量係指，例如，沿著半導體基板之 切斷起點區域而在半導體基板上施加彎曲應力或剪應力， 藉由在半導體基板上付與溫度差而使之產生熱應力。第2, 藉由形成切斷起點區域，將切斷起點區域作爲起點而朝向 半導體基板之斷面方向（厚度方向）而成自然的分割，而具 有在結果上來看爲使半導體基板切斷之情況。此係爲，例 如在半導體基板之厚度較小的情況下，而可能藉由1列的 改質區域而使切斷起點區域形成，在半導體基板之厚度爲 較大的情況下，形成在厚度方向藉由以多數列所形成之改 質區域而形成切斷起點區域。此外，即使在此種自然分割 的情況下，於切斷處上，直到對應於未形成有切斷起點區 域之部位的部分表面上係不會產生搶先分割的情況，而可 -15- 200307322 僅割斷在對應於形成有切斷起點區域之部分，因此，係可 良好地控制割斷動作。近年來，因矽晶圓等半導體基板之 厚度係有薄化傾向，故而此種控制性爲佳之割斷方法係大 爲有效。 接著，在本實施例中，作爲以多光子吸收所形成之改質 區域，係具有如下說明之熔融處理區域。 將聚光點聚合至半導體基板之內部，於聚光點中之電場 強度爲以lx l〇8(W/cm2)以上、且脈衝幅度爲1//S以下之 條件下照射雷射光。藉此，半導體基板之內部係藉由多光 子吸收而使局部受到加熱。藉由此種加熱而使熔融處理區 域形成在半導體基板之內部。所謂的熔融處理區域係指一 旦熔融後而再度固化之區域、或是亦具有由熔融狀態之區 域或由熔融狀態而再固化之狀態的區域、且亦具有已經過 相變化之區域或已變化結晶構造之區域。此外，所謂的熔 融處理區域亦可爲在單結晶構造、非晶質構造、多結晶構 造中將某一構造變化成其他構造之區域。亦即，例如意味 著有由單結晶構造變化成非晶質構造之區域、由單結晶構 造變化成多結晶構造之區域、由單結晶構造變化成包含有 分晶質構造與多結晶構造之構造的區域。當半導體基板爲 矽單結晶構造之情況下，熔融處理區域係例如爲非晶質矽 構造。作爲電場強度之上限値，係例如爲lx l〇12(W/cxn2)。 脈衝幅度係例如爲以Ins〜2 00ns爲佳。 本案發明者係爲，藉由實驗而確認在矽晶圓之內部爲形 成有熔融處理區域。實驗條件係如下述。 -16- 200307322 (A) 半導體基板：矽晶圓（厚度3 5 0 v m、外徑4英吋）。 (B) 雷射 光源：半導體雷射激勵Nd : YAG雷射 波長:1 064nm 雷射光點斷面積：3.14x l(T8cm2 震盪形態：Q脈衝交換（s w i t c h - p u 1 s e) 重複頻率數：1 00kHz 脈衝幅度：3 0 n s 輸出：20从：[/脈衝 雷射光品質：ΤΕΜ^ 偏光特性：直線偏光 (C) 聚光用透鏡 倍率：5 0倍 Ν.Α. ： 0.55 對於雷射光波長之透過率：6 0 % (D) 載置有半導體基板之載置台的移動速度：i00mm/秒 第7圖係表示藉由以上述條件之雷射加工所切斷之矽晶 圓之局部中之斷面照片的圖片。係使熔融處理區域1 3形成 在矽晶圓1 1之內部。此外，以上述條件所形成之熔融處理 區域1 3之厚度方向的大小係爲1 〇 〇从m左右。 將丨谷融處理區域1 3爲藉由多光子吸收所形成之事進行 說明。第8圖係表示雷射光之波長與矽基板之內部透過率 之間的關係圖表。不過，係分別除去基板之表面側與裏面 側之反射成分’而表示出僅有內部之透過率。矽基板之各個 -17- 200307322 厚度 t 係分另 0 針 f 寸方令 5 0 // m、1 〇 〇 μ m、2 0 0 // m、5 0 0 // m、1 0 0 0 μ m而揭示上述關係。 例如，在N d : YA G雷射之波長爲1 〇 64 nm之中，矽基板 之厚度係爲5 0 0 // m以下的情況下’可知在矽基板之內部之 雷射光爲透過8 0 %以上。於第7圖所示之矽晶圓1 1之厚 度係爲3 5 0 // m，因此，藉由多光子吸收所達成之熔融處理 區域1 3係被形成在矽晶圓之中心附近、亦即爲被形成在由 表面至1 7 5 // m之部分上。在此情況下之透過率係爲，在將 厚度2 0 0 // m之矽晶圓作爲參考後，因係爲9 0 %以上，故 而雷射光係僅在矽晶圓 Π之內部被吸收、且近乎全數通 過。此係爲，在矽晶圓Π之內部係使雷射光被吸收，熔融 處理區域1 3並非被形成在矽晶圓1 1之內部（亦即，藉由雷 射光而以一般加熱而形成熔融處理區域），而意味著熔融處 理區域1 3係爲藉由多光子吸收所形成。藉由多光子吸收所 達成之熔融處理區域的形成係爲，例如係記載於日本熔接 學會全國大會演講槪要第66集（2000年4月）之第72頁至 第73頁中之「藉由兆分之一秒脈衝雷射所達成之矽之加工 特性評估」。 此外，矽晶圓係爲，在熔融處理區域上具有所形成之切 斷起點區域作爲起點而朝向斷面方向、產生分割，此種分 割係爲係藉由到達至矽晶圓之表面與裏面而在結果上來看 係被切斷。到達矽晶圓之表面與裏面之此種分割係亦具有 呈自然成長的情況，亦具有藉由將力施加於矽晶圓而成長 的情況。此外’在由切斷起點區域而使矽晶圓之表面與裏 -18- 200307322 面受到的分割爲呈自然地成長的情況下，爲具有由熔融形 成切斷起點區域之熔融處理區域之狀態而成長分割的情 況、或是由形成切斷起點區域之熔融處理區域爲熔融之狀 態下進行再固化時而成長分割的情況下之任一方的情況。 不過，無論是在何種情況下，熔融處理區域係僅被形成在 矽晶圓之內部，而在切斷後之切斷面上係如第7圖所示， 爲僅在內部形成有熔融處理區域。當在半導體基板之內部 形成在熔融處理區域中具有切斷起點區域後，於割斷時， 因難以產生由切斷起點區域線分離之不必要的分割故而容 易進行割斷控制。 以上，雖然以藉由多光子吸收所形成之改質區域來說明 熔融處理區域之情況，不過，考慮半導體基板之結晶構造 或其劈開性等，而將切斷起點區域形成如下所述時，將其 切斷起點區域作爲起點，便可以更加小之力、且精度爲佳 的切斷半導體基板。 亦即’在由矽等鑽石構造之單結晶半導體所形成之基板 的情況下，係以在沿著（111)面（第1劈開面）或（1 1 0)面（第2 劈開面）之方向上形成切斷起點區域者爲佳。此外，在由 GaAs等閃鋅礦（sphalerite)型構造之III-V族化合物半導體 所形成之基板的情況下，係以將切斷起點區域形成在沿著 (1 1〇)面之方向者爲佳。 此外，在沿著正交於應形成上述切斷起點區域之方向（例 如，沿著單結晶矽基板中之（1 1 1 )面的方向）、或是在沿著正 交於應形成切斷起點區域之方向上，若將定向平面 -19- 200307322 (orientation flat)形成在半導體基板上時，藉由將該定向平 面作爲基準，便可將沿著應形成切斷起點區域之方向的切 斷起點區域而容易、且正確地形成在半導體基板上。 參照第9圖，針對被使用在上述雷射加工方法之雷射加 工裝置進行說明。第9圖係爲雷射加工裝置1 0 0之槪略構 成圖。 雷射加工裝置100係具備有：雷射光源101，爲產生雷 射光L ;雷射光源控制部1 0 2，係用以調節雷射光L之輸 出或脈衝幅度等而控制雷射光源101 ;分色鏡（dichroic mirror)103，爲具有雷射光L之反射機能，且配置呈足可 以90°改變雷射光L之光軸朝向；聚光用透鏡1〇5，爲將 以分色鏡103所反射之雷射光L進行聚光；載置台1〇7， 爲載置有已受到由聚光用透鏡1 0 5所聚光之雷射光L所照 射的半導體基板；Μ 0台座108，係用以使載置台107旋轉； X軸台座109，爲用以使載置台107朝X軸方向移動；γ 軸台座111，爲用以使載置台107朝與X軸方向正交之γ 軸方向移動；Ζ軸台座113，爲用以使載置台1〇7朝與X 軸方向與Υ軸方向正交之Ζ軸方向移動；台座控制部i丨5， 係爲控制該等4個台座108、109、111、113之移動。 載置台1 0 7係具有：紅外透過照明1 1 6，係產生用以使 半導體基板1由紅外線所照明的紅外線；支撐部1 〇 7 a，係 將半導體基板1支撐在紅外透過照明1 1 6上，用以使φ _ 體基板1以紅外透過照明1 1 6而照射有紅外線。 此外，Ζ軸方向係形成爲與半導體基板1之表面3正交 -20- 200307322 之方向，因此，爲形成射入至半導體基板1之雷射光L之 焦點深度的方向。藉此，藉由使Z軸台座1 1 3於Z軸方向 移動，而可將雷射光L之聚光點P聚合至半導體基板1之 表面3或內部。此外，此種聚光點P之X (Y)軸方向之移動 係爲，使半導體基板1以（X)Y軸台座109(111)而於X(Y) 軸方向移動來進行。 雷射光源101係爲產生脈衝雷射光之Nd : YAG雷射。 作爲可用於雷射光源101之雷射，其他係具有Nd: YV04 雷射、Nd : YLF雷射或鈦藍寶石雷射（titanium sapphire laser)。在形成熔融處理區域的情況下，係以使用Nd : YAG 雷射、Nd : YV04雷射、Nd : YLF雷射爲佳。在本實施例 中，雖在半導體基板1之加工中爲採用脈衝雷射光，不過， 若是可引起多光子吸收時，則亦可爲連續波雷射光。 雷射加工裝置1 〇〇更具備有：觀察用光源1 1 7，係爲了 將被載置於載置台1 之半導體基板1可藉由可視光線來 進行照明，而產生可視光線；以及可視光用之光束分離器 1 1 9，係與分色鏡1 〇3及聚光用透鏡1 05配置在同樣的光軸 上。且使分色鏡1〇3配置在光束分離器119及聚光用透鏡 1 05之間。光束分離器Π 9係被配置呈具有反射約一半之 可視光線、且透過殘餘一半之機能’並且將可視光線之光 軸朝向改變9 0 ° 。由觀察用光源1 1 7所產生之可視光線係 以光束分離器1 1 9而被反射約一半’此種已被反射之可視 光線係透過分色鏡1 〇3及聚光用透鏡1 〇 5，而照明包含半 導體基板1之切斷預定線5等之表面3。 200307322 雷射加工裝置1 0 0更具備有被配置在與光束分離器Π 9、 分色鏡1 〇 3及聚光用透鏡1 0 5相同光軸之拍攝元件1 2 1以 及成像透鏡1 2 3。作爲拍攝元件1 2 1，例如係具有C C D照 相機。已照明包含切斷預疋線5等之表面3的可視光線之 反射光係爲，透過聚光用透鏡1〇5、分色鏡103、光束分離 器1 1 9，以成像透鏡1 23所成像、且以拍攝元件1 2 1拍攝 而形成拍攝資料。 此外，在將半導體基板1以紅外透過照明1 1 6而照明紅 外線，同時若藉由後述之拍攝資料處理部1 2 5而將成像透 鏡1 2 3及拍攝元件1 2 1之觀察面相合於半導體基板丨之內 部時，係拍攝半導體基板1之內部而可取得半導體基板1 之內部拍攝資料。 雷射加工裝置1 0 0更具備有：拍攝資料處理部1 2 5，係 輸入有由拍攝元件1 2 1所輸出之拍攝資料；整體控制部 1 2 7，係控制雷射加工裝置1 〇 〇之整體；以及監視器1 2 9。 拍攝資料處理部1 2 5係爲，將拍攝資料作爲基準，爲了將 以觀察用光源1 1 7產生之可視光之焦點相合於表面3上而 演算焦點資料。依據此種焦點資料，台座控制部1 1 5爲移 動控制Z軸台座1 1 3，以將可視光之焦點相合於表面3。藉 此，拍攝資料處理部1 2 5係作爲自動對焦單元之機能。此 外，拍攝資料處理部1 2 5係爲，將拍攝資料作爲基準，而 演算表面3之擴大影像等影像資料。此種影像資料係被送 至整體控制部1 2 7，而使整體控制部受到各種處理、被傳 送至監視器1 2 9。藉此，而在監視器1 2 9顯示有擴大影像。 -22- 200307322 在整體控制部1 2 7方面，輸入來自台座控制部1 1 5之資 料、來自拍攝資料處理部1 25之影像資料等，以基於該等 資料而控制光源控制部1 〇 2、觀察用光源Π 7以及台座控 制部]1 5，藉此而整體控制雷射加工裝置；! 00。藉此，整體 控制部1 27係作爲電腦單元之機能。 以下，藉由實施例來針對本發明進行更加具體的說明。 〔半導體基板之實施例1〕 參照第1 〇圖至第1 3圖，針對有關本發明之半導體基板 之實施例1進行說明。第1 0圖係有關實施例1之半導體基 板1的立體圖。第1 1圖係沿著於第1 0圖所示之半導體基 板之XI-XI線剖面之斷面圖，第12圖係沿著於第10圖所 示之半導體基板之ΧΙΙ-ΧΠ線剖面之斷面圖，第13圖係表 示於第10圖所示之被設在半導體基板表面之雷射圖型之相 片的圖片。 有關實施例1之半導體基板1係爲厚度3 5 0 // m、外徑4 英吋之圓板狀矽晶圓，如第1 0圖所示，係被形成爲半導體 ®板1之周緣部局部爲形成直線狀之被切割狀之定向平面 (以下稱之爲「OF」）15。 如第1 1圖所示，在半導體基板1之內部中，在沿著平 行於OF15方向延伸之切斷起點區域9a係由半導體基板1 內部中之外徑中心（以下稱之爲「基準原點」）於每個所定 間隔呈多數狀形成。此外，在半導體基板1之內部中，在 沿著垂直於OF 1 5方向延伸之切斷起點區域9b係由基準原 點於每個所定間隔呈多數狀形成。切斷起點區域9a係如第 -23- 200307322 1 2圖所不爲僅形成在半導體基板1之內部，而並未到達至 半導體基板1之表面3與裏面1 7。此係亦與有關切斷起點 區域9b相同。切斷起點區域9a及切斷起點區域9b係分別 以在半導體基板1之內部形成爲i列狀而形成具有熔融處 理區域。 如第10圖所示，於半導體基板1之表面3中之基準原 點正上方之位置上係設有雷射圖型1 9。藉由此種雷射圖型 1 9與OF 1 5兩者，係可掌握被形成在半導體基板1之內部 之切斷起點區域9a及切斷起點區域9b的位置。亦即，雷 射圖型1 9與OF 1 5兩者係作爲用以識別形成在半導體基板 1內部之切斷起點區域9a及切斷起點區域9b之位置的識 別圖型之機能。此外，雷射圖型1 9之形成處係爲，除了設 在切斷起點區域上之外，亦可設在形成於半導體基板上之 電路等之功能部位以外之處、或是形成於無法作爲半導體 基板之周緣部之半導體裝置而利用之部位。並且，雷射圖 型1 9係以被稱之爲軟性標印之無引起灰塵或引起熱影響之 潔淨的雷射圖型方式，藉由溶解半導體基板1之表面3而 形成，如第1 3圖所示，雷射圖型1 9係爲直徑1 μ m之凹狀 物。 其次，參照第9圖及第1 4圖，針對以上述雷射加工裝 置100所達成之半導體基板1之製造方法來進行說明。第 1 4圖係用以說明半導體基板1之製造方法的流程圖。 首先，藉由未圖示之半導體基板1之光吸收特性之分光 光度計來進行測定。依據此種測定結果，所分別選定之雷 200307322 射光源101係爲，產生用以形成在半導體基板1之表面3 上之雷射圖型1 9的雷射光、以及對於半導體基板1爲透明 波長或吸收較少之波長之雷射光L( S 1 0 1)。接著，測定半 導體基板1之厚度。依據厚度測定結果及半導體基板1之 折射率來決定半導體基板1之Z軸方向之移動量（S 1 0 3 )。 此移動量係爲，用以使對於半導體基板1爲透明波長或吸 收較少之波長之雷射光L之聚光點P位於半導體基板1之 內部，而將位於半導體基板1之表面3之雷射光L的聚光 點P作爲基準之半導體基板1之Z軸方向之移動量。該移 動量係被輸入至整體控制部1 2 7。 將半導體基板1載置於雷射加工裝置100之載置台107 之支撐構件l〇7a上。並且使可視光由觀察用光源1 17產生、 照明至半導體基板1(S105)。將已受到照明之半導體基板1 之表面3藉由拍攝元件1 2 1而進行拍攝。以拍攝元件1 2 1 所拍攝之拍攝資料係被傳送至拍攝資料處理部1 25。依據 此種拍攝資料，拍攝資料處理部1 2 5係以將觀察用光源1 1 7 之可視光之焦點位於表面3狀地演算焦點資料（S 1 07)。 此種焦點資料係被傳送至台座控制部1 1 5。台座控制部 1 1 5係爲，基於該焦點資料而使z軸台座1 1 3於Z軸方向 移動（S 1 0 9)。藉此而將觀察用光源〗〗7之可視光焦點配置 於半導體基板1之表面3。此外，拍攝資料處理部1 25係 爲’依據拍攝資料而演算半導體基板1之表面3之擴大影 像資料。此種擴大影像資料係經由整體控制部；[2 7而被傳 送至監視器1 2 9，藉此而在監視器1 2 9上顯示有半導體基 -25- 200307322 板1之表面3之擴大影像。 接著，爲使半導體基板〗之0F 1 5之方向與Y台座Π 1 之衝程方向一致，而藉由Θ台座1 〇 8使半導體基板1旋轉 (S 1 11 )。再者，用以在半導體基板1之表面3形成雷射圖 型19之雷射光之聚光點係爲了形成在半導體基板1之表面 3之基準原點正上方位置，而藉由X軸台座1〇9、Y軸台座 1 1 1以及Z軸台座11 3來使半導體基板1移動（S 1 1 3 )。在此 狀態下照射雷射光，將雷射圖型1 9形成在半導體基板1之 表面3上之基準原點正上方之位置（S115)。 之後，預先被輸入以步驟S1 03所決定之整體控制部127 之移動資料係被傳送至台座控制部1 1 5。台座控制部1 1 5 係根據該移動量資料，而在雷射光L之聚光點P形成爲半 導體基板1之內部的位置上，藉由Z軸台座113而使半導 體基板1朝Z軸方向移動（S 117)。 接著，由雷射光源1 0 1產生雷射光L，將雷射光L照射 至半導體基板1上。雷射光L之聚光點P係位於半導體基 板1之內部，因此，熔融處理區域係僅形成在半導體基板 1之內部。並且，藉由X軸台座109或Y軸台座111而使 半導體基板1移動，在半導體基板1之內部中，分別將在 沿著平行於OF 1 5方向延伸之切斷起點區域9a、以及沿著 垂直於OF 1 5方向延伸之切斷起點區域9b由基準原點於每 個所定間隔呈多數狀形成（S 1 1 9)，製造出有關實施例1之 半導體基板1。 此外，在將半導體基板1藉由紅外透過照明1 1 6而以紅 -26 - 200307322 外線進行照明的同時，若藉由影像資料處理部；! 2 5而使成 像透鏡1 2 3與拍攝元件1 2 1之觀察面相合於半導體基板1 之內部時，拍攝形成在半導體基板1之內部的切斷起點區 域9a及切斷起點區域9b、取得拍攝資料，而可顯示在監 視器1 2 9上。 如上述之說明，有關實施例1之半導體基板1係爲，使 聚光點P相合於半導體基板1之內部，於聚光點p中之峰 値功率密度爲lx l〇8(W/cm2)以上、且脈衝幅度爲1//s以 下之條件下，藉由照射雷射光L而在半導體基板〗之內部 藉由多光子吸收而形成有熔融處理區域。在此種產生多光 子吸收所獲得之雷射光L的照射中，在半導體基板1之表 面3係因幾乎未吸收有雷射光L故而半導體基板1之表面 3係無法被熔融。從而，在半導體裝置之製造程序中，係 可藉由如習知之程序而將功能元件形成在半導體基板1之 表面3上。此外，因半導體基板1之裏面1 7亦未被熔融， 故而當然可將半導體基板1之裏面17進行與半導體基板1 之表面3相同的處理。 此外，有關實施例1之半導體基板1係爲，使具有熔融 處理區域之切斷起點區域9 a與切斷起點區域9b形成在半 導體基板1之內部。在使熔融處理區域形成在半導體基板 1之內部後，爲將熔融處理區域作爲起點而以較小之力在 半導體基板1上產生分割，因此，係可沿著切斷起點區域 9a及切斷起點區域9b而藉由較高精度來分割、切斷半導 體基板1。藉此，在半導體裝置之製造程序中，係無須如 -27- 200307322 同習知之功能元件形成後之切削加工或加熱熔融加工，例 如’如同沿者切斷起點區域9 a及切斷起點區域9 b而僅以 刀緣抵接至半導體基板1之裏面1 7便可切斷半導體基板 1。從而’藉由功能兀件形成後之半導體基板1之切斷而可 防止功能元件之破壞。 再者，在有關實施例1之半導體基板1中，雷射圖型！ 9 與OF15兩者係成爲形成在半導體基板1之內部的切斷起 點區域9 a及切斷起點區域9 b之位置的基準。從而，在半 導體裝置之製造程序中，依據雷射圖型19與OF15而掌握 形成在半導體基板1之內部的切斷起點區域9 a及切斷起點 區域9b之位置，而可進行功能元件之圖型製作或半導體基 板1之切斷等。 此外，當使熔融處理區域形成在半導體基板1之內部後， 即使是並非有意地施加外力，將熔融處理區域作爲起點（亦 即，爲沿著切斷起點區域9a及切斷起點區域9b)、而具有 在半導體基板1之內部產生分割之情況。此種分割是否已 到達半導體基板1之表面3或裏面1 7係有關於在半導體基 板1之厚度方向上之熔融處理區域之位置、或是有關於在 對於半導體基板1之厚度的熔融處理區域之大小。從而， 藉由調節形成在半導體基板1內部之熔融處理區域之位置 或大小等，而可進行下列各種控制，即，在半導體裝置之 製造程序中，藉由使半導體基板1經過環狀傳遞或是加熱 循環而可使分割不致到達半導體基板1之表面3及裏面 1 7、或是在即將切斷前而將分割到達至半導體基板1之表 200307322 面3及裏面1 7。 〔半導體基板之實施例2〕 參照第1 5圖至第1 8圖，針對有關本發明之半導體基板 之實施例2進行說明。有關實施例2之半導體基板1係爲 厚度3 5 0 // m、外徑4英吋之圓板狀G a A s晶圓，如第1 5圖 所示，係使半導體基板1之周緣部局部切割呈直線狀而形 成有OF15 。 此種半導體基板1係具有沿著外緣之外緣部3 1 (第1 5圖 之2點鏈線之外側部分），在該外緣部3 1之內側部分32(第 1 5圖之2點鏈線之內側部分）的內部係與有關實施例1之 半導體基板1相同的，爲形成有沿著平行於〇 F 1 5方向延 伸之切斷起點區域9a、以及沿著垂直於OF1 5方向延伸之 多個切斷起點區域9b。如此，在內側部分3 2之內部爲使 切斷起點區域9a、9b形成格子狀’而使內側部分32被區 隔呈多數矩形狀之區隔部3 3。 在半導體裝置之製造程序中，係使功能元件形成在各個 區隔部33中，之後，沿著切斷起點區域9 a、9 b而使半導 體基板1被切斷，各區隔部3 3爲形成對應於各個半導體晶 片。 而如第1 6圖所示，在多數區隔部33中，位於外緣部3 i 側之區隔部3 3之外緣部3 1側之角部分3 3 a中，係交叉切 斷起點區域9 a與切斷起點區域9b所形成。亦即，在角部 分33a中，切斷起點區域9a係超越切斷起點區域9b而結 束、切斷起點區域9b係超越切斷起點區域9a而結束。此 - 29- 200307322 外，所謂的「多數區隔部3 3中，位於外緣部3 1側之區隔 部33」，換言之，係可指稱爲「在多數之區隔部3 3之中， 爲鄰接至外緣部3 1所形成之區隔部3 3」。 其次，針對有關實施例2之半導體基板1之製造方法來 進行說明。如第1 7圖所示，爲準備有遮罩3 6，其係形成 有具有與半導體基板1之內側部分3 2相等之形狀的開口部 3 5。並且，將遮罩3 6重疊至半導體基板1、以將內側部分 3 2由開口部3 5露出。藉此，半導體基板1之外緣部3 1爲 形成以遮罩3 6所覆蓋。 在此狀態下，例如係採用上述之雷射加工裝置1 00，而 將聚光點相合於半導體基板1之內部、照射雷射光，在半 導體基板1之內部以多光子吸收而形成熔融處理區域，藉 此而將切斷起點區域9a、9b形成在由半導體基板1之雷射 光射入面（亦即，由遮罩3 6之開口部3 5露出之半導體基板 1之表面）至所定距離內側上。 此時，將形成雷射光之掃描線的切斷預定線5設定呈以 OF 1 5爲基準之格子狀，不過，若使各切斷預定線$之起點 5a與終點5b位於遮罩36上時，係造成對於半導體基板1 之內側部分3 2爲以確實、且同等的條件下照射雷射光。藉 此，即使被形成在內側部分3 2之內部上的熔融處理區域在 任何場所，均可呈略爲同等的形成狀態，且可形成精密的 切斷起點區域9a、9b。 此外，亦可不使用遮罩3 6，而使各切斷預定線5之起點 5 a與終點5 b位於半導體基板1之內側部分3 2與外緣部3 1 - 30- 200307322 之間的邊界附近，藉由沿著各切斷預定線5而進行雷射光 之照射而可在內側部分32之內部形成切斷起點區域9a、 9b ° 如上述之說明，若藉由有關實施例2之半導體基板1時， 藉由與關於實施例1之半導體基板1相同的理由，在半導 體裝置之製造程序中，係可將功能元件形成在半導體基板 1之表面，且在功能元件形成後係可藉由半導體基板1之 切斷而可防止功能元件之破壞。 此外，使切斷起點區域9a、9b形成在半導體基板1之 內側部分3 2之內部，由於在外緣部3 1係未形成切斷起點 區域9a、9b，因而提昇作爲半導體基板1整體之機械強度。 從而，在進行半導體基板1之搬送程序或用以形成功能元 件之加熱程序等之中，係可防止半導體基板1在意料之外 下被切斷之事件。 此外，在位於外緣部3 1側之區隔部3 3之角部分3 3 a之 中，因交叉切斷起點區域9 a、9b而形成，故而即使在角部 分3 3 a之中，亦可確實地形成與該區隔部3 3之其他部分相 同的切斷起點區域9a、9b、且爲形成良好狀之物。從而， 在切斷半導體基板1時，係可防止在對應於該區隔部3 3之 半導體晶圓上發生碎屑或裂化。 此外，如第1 8圖所示，切斷起點區域9a、9b係被收容 於半導體基板1之內部、且未露出於外部’因此’亦可防 止在形成構成切斷起點區域9a、9b之熔融處理區域時之氣 體的產生。 -31- 200307322 再者，藉由使構成切斷起點區域9 a、9 b之熔融處理區 域形成在半導體基板1之內部，而期待有捕獲不純物之吸 氣效果，而形成爲在半導體裝置之製造程序中，爲可將重 金屬等不純物自裝置活性區域去除。此係爲，在有關實施 例1之半導體基板1亦爲相同。 〔半導體晶片以及半導體裝置之製造方法的實施例〕 參照第1 9圖，針對有關本發明之半導體晶片以及半導 體裝置之製造方法的實施例進行說明。第1 9圖係有關實施 例之半導體晶片2 1之立體圖。 有關貫施例1之半導體晶片2 1係爲一種形成有如下所 示之物。亦即，使用有關上述實施例1或實施例2之半導 體基板1，在半導體裝置之製造程序中，將基於雷射圖型19 與Ο F 1 5而掌握被形成在半導體基板1之內部的切斷起點 區域9a與切斷起點區域9b之位置，藉由圖型製作而將多 數功能元件23形成在半導體基板1之表面3上。並且，在 經過探針測試等檢測程序後，依據雷射圖型1 9與Ο F 1 5， 以如同沿著切斷起點區域9 a及切斷起點區域9 b，而僅以 刀緣抵接至半導體基板1之裏面1 7便可切斷半導體基板 1、獲得半導體晶片2 1。 如此所形成之半導體晶片2 1係如第1 5圖所示，其周緣 部爲藉由切斷面25所包圍，在半導體晶片21之端面中的 切斷面25上爲具有切斷起點區域9a或切斷起點區域9b。 切斷起點區域9a或切斷起點區域9b係均形成具有熔融處 理區域，因此，半導體晶片21爲形成在切斷面2 5上具有 -32- 200307322 熔融處理區域。 如以上之說明，若藉由有關實施例之半導體晶片2 1時， 因藉由熔融處理區域而使切斷面2 5受到保護，固可防止在 切斷面25中之碎屑或裂化之產生。此外，半導體晶片2 1 之周緣部爲以切斷面2 5所包圍，因而半導體晶片2 1之周 緣部形成爲藉由熔融處理區域所包圍，藉此，可使半導體 晶片2 1之抗折強度提昇。 以上，雖針對本發明之實施例進行詳細的說明，不過， 當知道的是本發明並不被限定在上述實施例中。 在上述實施例中，作爲用以識別形成在半導體基板內部 之切斷起點區域之位置的識別圖型，係在半導體基板之表 面上設有雷射圖型及OF，不過，亦可例如設置多數的雷射 圖型、或是拉線等，藉由各種方法而在半導體基板之表面 上設置識別圖型。 此外，上述實施例雖係爲使切斷起點區域呈格子狀地形 成在半導體基板之內側的情況，不過，切斷起點區域係因 藉由雷射加工所形成，故而可沿著任意形狀之線來形成切 斷起點區域。 再者，上述實施例之半導體晶片雖係爲使周緣部以切斷 面所包圍之物，不過，即使僅將周緣部之局部作爲切斷面， 仍可藉由熔融處理區域防止在切斷面上之碎屑或裂化之產 生，可使半導體晶片之抗折強度提昇。 〔產業上利用之能性〕 如上述說明，若藉由本發明時，藉由雷射光之照射而使 -33- 200307322 得被形成在該雷射光之聚光點位置之多光子吸收所造成之 改質區域形成在半導體基板之內部。亦即，此種改質區域 係爲，使雷射光之聚光點聚合於半導體基板之內部，藉由 在該聚光點之位置上產生有所謂多光子吸收之現象而被形 成在半導體基板之內部。在產生此種多光子吸收所獲得之 雷射光之照射中，在半導體基板之表面上幾乎未有雷射光 之吸收，因此不致熔融半導體基板之表面。從而，在半導 體裝置之製造程序中，係可將功能元件形成在如同習知之 半導體基板之表面上。 再者，若藉由本發明時，爲藉由改質區域而使切斷起點 區域形成在半導體基板之內部。當使改質區域形成在半導 體基板之內部後，將改質區域作爲起點、且以較小之力而 使裂痕產生在半導體基板上，因此，沿著切斷起點區域係 可藉由較高精度來切割、切斷半導體基板。從而，在半導 體裝置之製造程序中，係形成爲無須如習知之功能元件形 成後之切削加工或加熱熔融加工，而可防止因半導體基板 之切斷所造成之功能元件之破壞。 【圖式簡單說明】 第1圖係藉由有關本實施例之雷射加工方法所進行之雷 射加工中之半導體基板之平面圖。 第2圖係沿著於第丨圖所示之半導體基板之η線剖 面之斷面圖。 第3圖係藉由有關本實施例之雷射加工方法而在雷射加 工後之半導體基板之平面圖。 -3 4- 200307322 第4圖係沿著於第3圖所示之半導體基板之iv-lV線剖 面之斷面圖。 第5圖係沿著於第3圖所示之半導體基板之v_v線剖面 之斷面圖。 第6圖係藉由有關本實施例之雷射加工方法所切斷之半 導體基板之平面圖。 第7圖係表示藉由有關本實施例之雷射加工方法所切斷 之矽晶圓之局部中之斷面照片的圖片。 第8圖係表示在有關本實施例之雷射加工方法中之雷射 光之波長與砂基板之內部透過率之間的關係圖表。 第9圖係有關本實施例之雷射加工裝置之槪略構成圖。 第1 0圖係有關實施例1之半導體基板之立體圖。 第1 1圖係沿著於第10圖所示之半導體基板之XI-XI線 剖面之斷面圖。 第12圖係沿著於第10圖所示之半導體基板之XII-XII 線剖面之斷面圖。 第13圖係表示於第10圖所示之被設在半導體基板表面 之雷射圖型之相片的圖片。 第1 4圖係用以說明有關實施例1之半導體基板之製造 方法的流程圖。 第1 5圖係有關實施例2之半導體基板之平面圖。 第1 6圖係揭示於第1 5圖之半導體基板之局部放大圖。 第1 7圖係用以說明於第1 5圖所示之半導體基板之製造 方法之平面圖。 -35- 200307322 第18圖係沿著於第15圖所示之半導體基板之乂¥111-X V 111線剖面之斷面圖。 第1 9圖係有關實施例之半導體晶片之立體圖。 【主要部分之代表符號說明】 E。：頻帶隙 L :雷射光 P :聚光點 1 :半導體基板 3 :表面 5 a :起點 5 b :終點 5 :切斷預定線 7 :改質區域 9a、9b :切斷起點區域 1 1 :矽晶圓 1 3 :熔融處理區域 1 5 :定向平面 1 7 :裏面 1 9 :雷射圖型 2 1 :半導體晶片 2 5 :切斷面 3 1 :外緣部 3 2 :內側部分 3 3 :區隔部 - 3 6 _ 200307322 3 5 :開口部 36 :遮罩200307322 发明 Description of the invention (The description of the invention should state: the technical field to which the invention belongs, the prior art, the content, the embodiments, and the diagrams.) [Technical field to which the invention belongs] The present invention relates to a method suitable for manufacturing semiconductors. A semiconductor substrate, a semiconductor wafer, and a method for manufacturing a semiconductor device used in the device. [Previous technology] In the manufacturing process of a semiconductor device, generally, after forming a large number of functional elements on a semiconductor substrate such as a sand wafer, the semiconductor substrate is cut (cutting) on each functional element by a diamond blade. Processing), to obtain a semiconductor wafer. In addition, the semiconductor substrate is also irradiated with an absorptive laser light to the semiconductor substrate, and the semiconductor substrate is cut by heating and melting (thermal melting processing) instead of cutting by the diamond blade. [Summary of the Invention] However, 'the above-mentioned cutting of a semiconductor substrate by cutting processing or heating and melting processing is performed after a functional element is formed on the semiconductor substrate. Therefore, for example, there may be a cause during cutting. The function may cause damage to the function element due to heat. Here, the present invention is proposed in view of such an event, and an object thereof is to provide a method for manufacturing a semiconductor substrate, a semiconductor wafer, and a semiconductor device, which can prevent the semiconductor device from being cut by cutting during the manufacturing process of the semiconductor device. Damage to functional components. In order to achieve the above-mentioned object, the semiconductor substrate of the present invention is -6-200307322, which is characterized by being caused by the absorption of multiple photons formed at the light-condensing spot position of the laser light by irradiation of the laser light. The modified region is formed so that the cut-off starting region is formed inside. When such a semiconductor substrate is used, the modified region caused by the absorption of multiple photons formed at the light-condensing spot position of the laser light is formed inside the semiconductor substrate by irradiation of the laser light. That is, the modified region is such that the light-condensing point of the laser light is condensed inside the semiconductor substrate, and a so-called multi-photon absorption phenomenon occurs at the light-condensing point position, and is formed inside the semiconductor substrate. . In the irradiation of the laser light obtained by the multiphoton absorption, since the laser light is hardly absorbed on the surface of the semiconductor substrate, the surface of the semiconductor substrate cannot be melted. Therefore, in the manufacturing process of a semiconductor device, a functional element can be formed on the surface of a conventional semiconductor substrate. When such a semiconductor substrate is used, a cutting starting region is formed inside the semiconductor substrate by a modified region. After the modified region is formed inside the semiconductor substrate, the modified region is used as a starting point, and cracks are generated on the semiconductor substrate with a small force. Therefore, the cutting along the starting region can be performed with higher accuracy. To cut and cut the semiconductor substrate. Therefore, in the manufacturing process of the semiconductor device, it is formed without the need for cutting processing or heat-melting processing after the formation of conventional functional elements, so that the destruction of the functional elements caused by the cutting of the semiconductor substrate can be prevented. Here, the so-called focusing point is a place where the laser light has been focused. The term "functional element" means a light-receiving element such as a photodiode or a light-emitting element such as a laser diode or a circuit element formed as a circuit. In addition, -7-200307322 The so-called cut-off region means a region that becomes the starting point of the cut when the semiconductor substrate is cut. Therefore, the cutting start region is a predetermined cutting portion to be cut in the semiconductor substrate. In addition, the cut-off starting area may be formed in a case where the modified region is formed in a continuous state, or may be formed in a case where the modified region is formed in a discontinuous state. In addition, the semiconductor substrate of the present invention is characterized in that the peak-to-peak power density in the light-condensing point is 1 X 1 08 (w / cm2) or more and the pulse amplitude is 1 // s or less By irradiating with the laser light, a modified region formed at the fusion processing region of the laser light condensing point position is included, so that the cut-off starting region is formed inside. When such a semiconductor substrate is used, the laser light is irradiated under the conditions that the peak-to-peak power density in the light-condensing point is 1x 108 (W / cm2) or more and the pulse amplitude is 1 // s or less The modified region including the fusion-processed region formed at the position of the laser light condensing point is formed inside the semiconductor substrate. That is, such a melting process region is such that the light-condensing point of the laser light is condensed inside the semiconductor substrate, a so-called multi-photon absorption phenomenon occurs at the light-condensing point position, and is locally heated, and It is formed inside the semiconductor substrate. Such a melt-processed region is an example of the modified region described above. Therefore, even with such a semiconductor substrate, a functional element can be formed on the surface of the semiconductor substrate in the manufacturing process of the semiconductor device, and the functional element can be prevented. Damage to functional elements caused by cutting of the semiconductor substrate after formation. In addition, the semiconductor substrate according to the present invention is characterized in that a cutting starting area is formed by irradiating with laser light at a position of a condensing point of the laser light. Internal. In addition, such a modified region may also have a molten processed region. If such a semiconductor substrate is used, for the same reason as the semiconductor substrate of the present invention described above, in the manufacturing process of the semiconductor device, a functional element can be formed on the surface of the semiconductor substrate, and the functional element can be prevented from being formed on the surface of the semiconductor substrate. Damage to functional elements caused by cutting of the semiconductor substrate during formation. However, the formation of the modified region may be caused by the absorption of multi-photons, and may be caused by other reasons. The semiconductor substrate according to the present invention is characterized in that it includes a modified starting region along the outer edge portion along the outer edge and an inner portion of the outer edge portion with a modified region to form a cutting starting region. If such a semiconductor substrate is used, for the same reason as the semiconductor substrate of the present invention described above, in the manufacturing process of the semiconductor device, functional elements can be formed on the surface of the semiconductor substrate, and the function can be prevented from functioning. The destruction of the functional elements caused by the cutting of the semiconductor substrate after the element is formed. In addition, by forming the cut-off starting region inside the inner portion of the outer edge portion of the semiconductor substrate, the semiconductor substrate can be prevented from being accidentally moved during the semiconductor substrate transportation process or the heating process for forming a functional element. Cut off. At this time, the cut-off starting area is formed in a grid shape. Among the partitions separated by the cut-off starting area, the corner portions of the partition located on the outer edge side are crossed to form the cut-off starting area. Better. Thereby, even in the corner portion of the partition portion located on the outer edge portion side, the same cut off starting region as the other portions of the partition portion can be formed reliably and well, and -9200307322 can be prevented. When the semiconductor substrate is cut, chips or cracks are generated on the semiconductor wafer corresponding to the partition. Here, the so-called grid system is not limited to the case where the cut-off starting areas extending in two orthogonal directions are crossed, but also means the case where the cut-off starting areas extending in two different directions are crossed. . In addition, the so-called intersecting system is not limited to the case of directly intersecting the cut-off starting regions along two different directions, but also means the case of three-dimensional interlacing the cut-off starting regions along two different directions (that is, With a reversed relationship). In addition, it is preferable that an identification pattern is provided on the surface of the semiconductor substrate to identify the position of the cut-off starting region formed inside the semiconductor substrate. Although the cutting starting area is formed inside the semiconductor substrate, the identification pattern for identifying the position of the cutting starting area is provided on the surface of the semiconductor substrate. Therefore, in the manufacturing process of the semiconductor device, The position of the cutting start region formed inside the semiconductor substrate is grasped based on the recognition pattern, and patterning of functional elements or cutting of the semiconductor substrate can be performed. In order to achieve the above-mentioned object, the semiconductor wafer of the present invention is such that a light-condensing spot is polymerized inside the semiconductor substrate, and a laser beam is irradiated to form a modified region by multiphoton absorption inside the semiconductor substrate. The modified region serves as a cutting starting region, and has a modified region formed on a cut surface formed by cutting the semiconductor substrate and having a cut. If this type of semiconductor wafer is used, the cut surface is protected by the modified region, so chip chips (chippi η g) or cracked products on the cut surface can be prevented. -10- 200307322 In the case where the peripheral edge portion of the semiconductor wafer is surrounded by the cut surface, the 'peripheral edge portion of the semiconductor wafer is formed to be surrounded by the modified region, whereby the flexural strength of the semiconductor wafer can be improved. In addition, the semiconductor wafer of the present invention is characterized in that the light-condensing point is polymerized inside the semiconductor substrate, and the light-condensing point has a peak power density of 1 × 108 (W / cm2) or more, And the laser beam is irradiated under the condition that the pulse amplitude is 1 // s or less, thereby forming a modified region including a molten processed region inside the semiconductor substrate, and using the modified region including the molten processed region as a starting point for cutting The region is formed by cutting the semiconductor substrate. The cut surface formed by the cutting has a modified region including a melt-processed region. The molten processed region in such a semiconductor wafer is an example of the above-mentioned modified region. Therefore, even with such a semiconductor wafer, in addition to preventing the occurrence of chipping or cracking on the cut surface, When the peripheral portion is surrounded by a cut surface, the flexural strength of the semiconductor wafer can be improved. In addition, the semiconductor wafer of the present invention is characterized in that a light-condensing point is polymerized inside the semiconductor substrate, and a modified region is formed inside the semiconductor substrate by irradiating laser light, and the modified region is defined as It is formed by cutting the starting region to cut the semiconductor substrate, and has a modified region on the cut surface formed by cutting. Such a modified region may also be a region that has been subjected to melting treatment. If such a semiconductor wafer is used "for the same reason as for the semiconductor wafer of the present invention mentioned above", it is possible to prevent the occurrence of chipping or cracking on the cut surface. When the peripheral portion is surrounded by a cut surface, the flexural strength of the semiconductor wafer can be improved. However, the formation of the modified region may be caused by the absorption of multi-photons and may be caused by other reasons. The semiconductor wafer of the present invention is characterized in that a modified region including a molten processed region is formed on an end surface. When such a semiconductor wafer is used, it is possible to prevent chipping or cracking on the end surface such as a cut surface caused by cutting the semiconductor substrate. At the same time, if the peripheral portion of the semiconductor wafer is surrounded by a modified region , Can improve the bending strength of semiconductor wafers. Based on the above, the method for manufacturing a semiconductor device according to the present invention can adopt a structure having the following procedure: that is, a light-condensing point is aggregated inside a semiconductor substrate and laser light is irradiated, and the inside of the semiconductor substrate is formed by multiphoton absorption The modified region is a procedure for forming the cut-off starting region inside the predetermined distance from the laser light incident surface of the semiconductor substrate along the planned cutting line of the semiconductor substrate through the modified region; After the process of the area, the process of forming the functional element on the semiconductor substrate; after the process of forming the function element, the process of cutting the semiconductor substrate along the cutting starting area. In addition, such a modified region may be a region that has been melt-processed. In addition, the manufacturing method of the semiconductor device of the present invention can adopt a structure having the following procedures: that is, a light-condensing point is aggregated inside the semiconductor substrate and laser light is irradiated, and a modified region is formed inside the semiconductor substrate, This modified region is a procedure for forming the cut-off starting region from the inside of the semi--1 2-200307322 laser light incident surface of the conductor substrate along the predetermined cutting line of the semiconductor substrate; After the program, the process of forming the component on the semiconductor substrate; the process of cutting the semiconductor substrate along the cutting starting area after forming the functional element. In some cases, the modified region may be a region that has been melt-processed. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with drawings. The semiconductor substrate and the semiconductor system related to this embodiment use the laser processing method described below. The laser beam is irradiated with laser light by condensing the light collecting points inside the substrate, and the modified regions are formed by absorption within the semiconductor substrate. Here, this method will be described first, especially with regard to multiphoton absorption. When the energy hv of the photon is smaller than the band gap Eq absorbed by the material, it becomes optically transparent. As a result, the product produced by the absorption of the material is h v > Ec. However, even if the intensity of the optically transparent light is relatively large, nh z; > E. The condition (n = 2 results in absorption in the material. In the case of this phenomenon called a multi-photon pulse wave, the intensity of the laser light is determined by the condensing power density (W / c m2) of the laser light, For example, multi-photon absorption occurs under conditions of a peak chirp power density of 1.08 (W / cm2) or more. The peak chirp is a beam point of logical light by (one pulse of each laser light in the spot) The cross-sectional area X pulse width) is obtained. In addition, in the case 'the intensity of the laser light is determined by the (W / cm2) of the focal point of the laser light. After the function element program is set at a predetermined distance, and this kind of When talking about the wafer in detail, the conditions that arise when the semiconductor is processed by multi-light laser, when the laser, 3, 4 ...) absorb. The peak at the light spot is at 1x power density t) + (electric field intensity of the laser continuous wave 200307322). The laser processing principle of this embodiment using such multiphoton absorption will be described with reference to FIGS. 1 to 6. FIG. 1 is a plan view of the semiconductor substrate 1 in laser processing, and FIG. 2 is a cross-sectional view taken along the line II-II of the semiconductor substrate 1 shown in FIG. 1, and FIG. 3 is a laser The plan view of the processed semiconductor substrate 1 is a sectional view taken along line IV-IV of the semiconductor substrate 1 shown in FIG. 3, and FIG. 5 is taken along the semiconductor shown in FIG. 3. A sectional view of the VV line section of the substrate, and FIG. 6 is a plan view of the semiconductor substrate 1 that was cut. As shown in FIGS. 1 and 2, the surface 3 of the semiconductor substrate 1 includes a semiconductor substrate to be cut. The desired cut-off line 5 of 1. The cut-off line 5 is an imaginary line extending in a straight line (the actual line extension on the semiconductor substrate 1 may also be used as the cut-off line 5). An example of laser processing is to aggregate the light-concentrating point P under conditions that generate multiphoton absorption. Inside the semiconductor substrate 1, the laser light L is irradiated to the semiconductor substrate 1 to form a modified region 7. In addition, the so-called focusing point is a place where the laser light L has been condensed. The planned cutting line 5 (that is, in the direction of the arrow A) is moved relative to each other, and the condensing point P is moved along the planned cutting line 5. Thus, as shown in FIGS. 3 to 5 As shown, the modified region 7 is formed only inside the semiconductor substrate 1 along the planned cutting line 5, and the starting point of the cutting region (the planned cutting section) 9 is formed in the modified region 7. The laser processing method of this embodiment is such that the semiconductor substrate 1 not only heats the semiconductor substrate 1 by absorbing the laser light L and forms a modified region 7. Instead, the laser light L is transmitted through the semiconductor substrate 1 and Semiconductor substrate-14 — 200307322 1 Multi-photon absorption is generated inside the modified region 7. As a result, since the laser light L is hardly absorbed on the surface 3 of the semiconductor substrate 1, the surface 3 of the semiconductor substrate 1 The system does not melt. If the semiconductor substrate 1 is cut, if When a cutting point has a starting point, the semiconductor substrate 1 is divided from the starting point, so as shown in FIG. 6, the semiconductor substrate 1 can be cut with a small force. As a result, the semiconductor substrate 1 can be placed on the surface 3 of the semiconductor substrate 1. The semiconductor substrate 1 can be cut without causing unnecessary division. In addition, the following two points are considered in cutting the semiconductor substrate using the cutting starting area as a starting point. First, after the cutting starting area is formed, By applying artificial force on the semiconductor substrate, the cutting starting region is used as a starting point, the semiconductor substrate is divided, and the semiconductor substrate may be cut. This is, for example, the case where the thickness of the semiconductor substrate is large. The so-called application of artificial force refers to, for example, applying a bending stress or a shear stress to a semiconductor substrate along a cut-off area of the semiconductor substrate, and generating a thermal stress by applying a temperature difference to the semiconductor substrate. . Second, by forming the cutting starting region, the cutting starting region is used as a starting point, and it is naturally divided toward the cross-sectional direction (thickness direction) of the semiconductor substrate. As a result, the semiconductor substrate may be cut. . This is, for example, when the thickness of the semiconductor substrate is small, the cutting starting region may be formed by a modified region of one row. When the thickness of the semiconductor substrate is large, it is formed in the thickness direction. The cut-off starting region is formed by the modified region formed by a plurality of rows. In addition, even in the case of such a natural division, pre-division will not occur on the surface of the cut until the portion corresponding to the portion where the starting point of the cut is not formed, but -15-200307322 only The cutting is in a portion corresponding to the area where the starting point of cutting is formed, and therefore, the cutting operation can be well controlled. In recent years, since the thickness of semiconductor substrates such as silicon wafers tends to be reduced, such a cutting method with good controllability is greatly effective. Next, in this embodiment, as a modified region formed by multiphoton absorption, it has a melt-processed region as described below. The light-condensing spot is polymerized inside the semiconductor substrate, and the electric field intensity in the light-condensing spot is irradiated with laser light under the conditions of 1 × 10 (W / cm2) or more and a pulse amplitude of 1 // S or less. Thereby, the inside of the semiconductor substrate is locally heated by multiphoton absorption. By this heating, a molten processed region is formed inside the semiconductor substrate. The so-called melt-treated region refers to a region that is once solidified once it has been melted, or a region that also has a region that is from the molten state or a state that is re-solidified from the molten state, and also has a region that has undergone phase changes or has changed crystals. The area of construction. In addition, the so-called melt-treated region may be a region in which a certain structure is changed to another structure in a single crystal structure, an amorphous structure, or a polycrystalline structure. That is, for example, it means that there is a region that changes from a single crystal structure to an amorphous structure, a region that changes from a single crystal structure to a polycrystalline structure, and a change from a single crystal structure to a structure that includes a crystalline structure and a polycrystalline structure. Area. When the semiconductor substrate has a silicon single crystal structure, the melt-processed region is, for example, an amorphous silicon structure. The upper limit 値 of the electric field strength is, for example, 1 × 1012 (W / cxn2). The pulse amplitude is preferably, for example, Ins to 2000ns. The inventors of the present case have confirmed by experiments that a molten processed region is formed inside the silicon wafer. The experimental conditions are as follows. -16- 200307322 (A) Semiconductor substrate: Silicon wafer (thickness 350 mm, outer diameter 4 inches). (B) Laser Source: Semiconductor laser excitation Nd: YAG laser Wavelength: 1 064nm Laser light spot area: 3. 14x l (T8cm2 Oscillation mode: Q pulse exchange (switch-pu 1 se) Repetition frequency: 100kHz Pulse amplitude: 3 0 ns Output: 20 from: [/ pulse laser light quality: ΤΜ ^ Polarization characteristics: linear polarized light (C ) Condensing lens magnification: 50 times N. Α. : 0. 55 Transmittance for laser light wavelength: 60% (D) Movement speed of the mounting table on which the semiconductor substrate is placed: i00mm / sec. Figure 7 shows the silicon crystal cut by laser processing under the above conditions. A picture of a cross-section photograph in a circle. The molten processing region 13 is formed inside the silicon wafer 11. The size in the thickness direction of the melt-processed region 13 formed under the above-mentioned conditions is about 1000 to m. A description will be given of the case where the valley melting treatment region 13 is formed by multiphoton absorption. Fig. 8 is a graph showing the relationship between the wavelength of laser light and the internal transmittance of a silicon substrate. However, the reflection components on the front side and the back side of the substrate are removed separately, and only the internal transmittance is shown. Each of the silicon substrates-17- 200307322 Thickness t is divided into another 0 pin f inch order 5 0 // m, 1 〇〇μ m, 2 0 0 // m, 5 0 0 // m, 1 0 0 0 μ m to reveal the above relationship. For example, when the wavelength of the N d: YA G laser is 1064 nm and the thickness of the silicon substrate is less than 50 0 // m, it can be seen that the laser light inside the silicon substrate is transmitted through 8 0 %the above. The thickness of the silicon wafer 1 1 shown in FIG. 7 is 3 5 0 // m. Therefore, the fusion processing region 13 obtained by multiphoton absorption is formed near the center of the silicon wafer, and also That is, it is formed on the part from the surface to 1 7 5 // m. The transmittance in this case is that after taking a silicon wafer with a thickness of 200 0 // m as a reference, it is more than 90%, so the laser light is absorbed only inside the silicon wafer Π. And almost all passed. This is because the laser light is absorbed inside the silicon wafer Π, and the melting process region 13 is not formed inside the silicon wafer 11 (that is, the laser light is used to form a melt process by general heating. Region), which means that the melt-processed region 1 3 is formed by multiphoton absorption. The formation of the fusion-processed region by multiphoton absorption is, for example, described in the lecture of the National Conference of the Welding Society of Japan, Chapter 66 (April 2000), pages 72 to 73. Evaluation of Processing Characteristics of Silicon Achieved by a Millisecond Pulse Laser. " In addition, the silicon wafer has a cut-off starting region formed on the molten processed region as a starting point, and is divided toward the cross-section direction. This division is performed by reaching the surface and the inside of the silicon wafer. As a result, the system was cut off. Such divisions that reach the surface and the inside of the silicon wafer may also grow naturally, and may also grow by applying a force to the silicon wafer. In addition, in the case where the surface of the silicon wafer and the -18-18,073,322 surface are naturally grown by cutting the starting point region, it is in a state in which the molten starting region is formed by melting to form the cutting starting region. Either the case of growing and dividing, or the case of growing and dividing when the re-solidification is performed while the molten processed region forming the cut-off starting region is molten. However, in any case, the melt-processed area is formed only inside the silicon wafer, and the cut surface after cutting is shown in FIG. 7, and the melt-processed area is formed only inside. . When the cut-off starting region is formed in the melt processing region inside the semiconductor substrate, the cut-off control is easy because it is difficult to generate unnecessary division by the cut-off starting region line. In the above, the modified region formed by multiphoton absorption is used to describe the case of the melt-processed region. However, considering the crystal structure of the semiconductor substrate or its cleaving property, etc., when the cut-off starting region is formed as described below, The cutting starting region can be used as a starting point, so that the semiconductor substrate can be cut with less force and better accuracy. That is, in the case of a substrate formed of a single crystal semiconductor made of diamond such as silicon, it is formed along the (111) plane (the first split plane) or the (1 1 0) plane (the second split plane). It is preferable to form a cutting starting area in the direction. In addition, in the case of a substrate formed of a group III-V compound semiconductor of a sphalerite type structure such as GaAs, the cutting starting region is formed in a direction along the (1 10) plane as good. In addition, in a direction orthogonal to the region where the above-mentioned cutoff start point should be formed (for example, in a direction along the (1 1 1) plane in a single crystal silicon substrate), or in a direction orthogonal to the cutout where the cutout should be formed. When an orientation flat-19-200307322 (orientation flat) is formed on a semiconductor substrate in the direction of the starting area, the orientation plane can be used as a reference to cut along the direction in which the cutting starting area should be formed. The starting region is easily and accurately formed on the semiconductor substrate. Referring to Fig. 9, a laser processing apparatus used in the above-mentioned laser processing method will be described. Fig. 9 is a schematic configuration diagram of a laser processing apparatus 100. The laser processing device 100 is provided with: a laser light source 101 for generating laser light L; a laser light source control section 102 for controlling the laser light source 101 for adjusting the output or pulse amplitude of the laser light L; The dichroic mirror 103 has the reflection function of the laser light L and is configured to change the optical axis direction of the laser light L by 90 °; the lens 105 for condensing is reflected by the dichroic mirror 103 The laser light L is condensed; the mounting table 107 is for mounting a semiconductor substrate that has been irradiated with the laser light L condensed by the focusing lens 105, and the M 0 pedestal 108 is used for The mounting table 107 rotates; the X-axis table 109 is used to move the mounting table 107 in the X-axis direction; the γ-axis table 111 is used to move the mounting table 107 in the γ-axis direction orthogonal to the X-axis direction; the Z-axis The pedestal 113 is used to move the mounting table 107 in the Z-axis direction orthogonal to the X-axis direction and the Z-axis direction; the pedestal control section i 丨 5 is for controlling the four pedestals 108, 109, 111, 113 of the move. The mounting table 1 0 7 includes infrared transmission lighting 1 16 which generates infrared rays for illuminating the semiconductor substrate 1 with infrared rays, and a support portion 107a which supports the semiconductor substrate 1 with infrared transmission lighting 1 1 6 In order to irradiate the φ_body substrate 1 with infrared rays, the infrared rays are irradiated through the illumination 1 1 6. The Z-axis direction is a direction orthogonal to -20-200307322 of the surface 3 of the semiconductor substrate 1. Therefore, it is a direction that forms a focal depth of the laser light L incident on the semiconductor substrate 1. Thereby, by moving the Z-axis pedestal 1 1 3 in the Z-axis direction, the light-condensing point P of the laser light L can be polymerized to the surface 3 or the inside of the semiconductor substrate 1. The movement of the X (Y) axis direction of the condensing point P is performed by moving the semiconductor substrate 1 in the X (Y) axis direction with the (X) Y axis stand 109 (111). The laser light source 101 is an Nd: YAG laser that generates pulsed laser light. As a laser that can be used for the laser light source 101, other systems have Nd: YV04 laser, Nd: YLF laser, or titanium sapphire laser. In the case of forming a molten processed region, it is preferable to use a Nd: YAG laser, a Nd: YV04 laser, or a Nd: YLF laser. In this embodiment, although the pulsed laser light is used in the processing of the semiconductor substrate 1, if it can cause multi-photon absorption, it may be a continuous wave laser light. The laser processing device 100 further includes: an observation light source 1 1 7 for generating visible light by illuminating the semiconductor substrate 1 placed on the mounting table 1 with visible light; and visible light; and The beam splitter 1 1 9 is arranged on the same optical axis as the dichroic mirror 103 and the condenser lens 105. The dichroic mirror 103 is arranged between the beam splitter 119 and the condenser lens 105. The beam splitter Π 9 is configured to have a function of reflecting about half of the visible light and transmitting the remaining half 'and changing the direction of the optical axis of the visible light by 90 °. The visible light generated by the observation light source 1 1 7 is reflected about half by the beam splitter 1 1 9 'This reflected visible light is transmitted through the dichroic mirror 1 0 3 and the condenser lens 1 0 5 In addition, the illumination includes the surface 3 of the semiconductor substrate 1 with a planned cut line 5 and the like. 200307322 The laser processing device 1 0 0 further includes a photographing element 1 2 1 and an imaging lens 1 2 3 which are disposed on the same optical axis as the beam splitter Π 9, the dichroic mirror 1 〇3, and the condenser lens 1 0 5 . The imaging element 1 2 1 is, for example, a CC camera. The reflected light system that has illuminated visible light including the cut line 5 and the surface 3 is transmitted through the condenser lens 105, the dichroic mirror 103, and the beam splitter 1 1 9 and imaged by the imaging lens 1 23 And shooting with the camera 1 2 1 to form shooting data. In addition, the semiconductor substrate 1 is irradiated with infrared rays through infrared light 1 1 6, and at the same time, the observation surfaces of the imaging lens 1 2 3 and the imaging element 1 2 1 are combined with the semiconductor by the photographic data processing unit 1 2 5 described later. When the inside of the substrate 丨 is taken, the inside of the semiconductor substrate 1 is photographed and the inside photographed data of the semiconductor substrate 1 can be obtained. The laser processing device 1 0 0 further includes: a photographing data processing unit 1 2 5 which is inputted with photographing data outputted by the photographing element 1 2 1; an overall control unit 1 2 7 which controls the laser processing device 1 〇〇 Of the whole; and monitors 1 2 9. The photographic data processing unit 1 2 5 uses the photographic data as a reference, and calculates the focal data in order to match the focal point of the visible light generated by the observation light source 1 1 7 to the surface 3. Based on such focus data, the pedestal control unit 1 15 controls the Z-axis pedestal 1 1 3 to move the focus of visible light on the surface 3. Based on this, the shooting data processing section 1 2 5 functions as an autofocus unit. In addition, the shooting data processing unit 1 2 5 uses the shooting data as a reference, and calculates the image data such as the enlarged image of the surface 3. Such image data is sent to the overall control section 1 2 7, and the overall control section is subjected to various processes and transmitted to the monitor 1 2 9. As a result, an enlarged image is displayed on the monitor 1 2 9. -22- 200307322 In terms of the overall control section 1 2 7, input the data from the pedestal control section 1 15 and the image data from the photographic data processing section 125 to control the light source control section 102 based on these data. Observation light source Π 7 and pedestal control unit] 1 5 to control the laser processing device as a whole;! 00. As a result, the overall control unit 127 functions as a computer unit. Hereinafter, the present invention will be described in more detail through examples. [Embodiment 1 of a semiconductor substrate] A description will be given of Embodiment 1 of a semiconductor substrate according to the present invention with reference to FIGS. 10 to 13. Fig. 10 is a perspective view of the semiconductor substrate 1 according to the first embodiment. FIG. 11 is a sectional view taken along the line XI-XI of the semiconductor substrate shown in FIG. 10, and FIG. 12 is taken along the line XI-XI of the semiconductor substrate shown in FIG. 10 Sectional view, FIG. 13 is a photograph showing a photo of a laser pattern on the surface of a semiconductor substrate shown in FIG. 10. The semiconductor substrate 1 of Example 1 is a circular silicon wafer having a thickness of 3 5 0 // m and an outer diameter of 4 inches. As shown in FIG. 10, it is formed as a peripheral portion of the semiconductor® plate 1. The part is a directional plane (hereinafter referred to as "OF") 15 that forms a linear cut shape. As shown in FIG. 11, in the inside of the semiconductor substrate 1, a cut-off starting region 9 a extending in a direction parallel to the OF15 is centered on the outer diameter of the inside of the semiconductor substrate 1 (hereinafter referred to as a “reference origin ") Are formed in a large number at each predetermined interval. In addition, in the inside of the semiconductor substrate 1, a cutting start region 9b extending in a direction perpendicular to the OF 15 direction is formed in a plural number from a reference origin at every predetermined interval. The cutting starting area 9a is not formed only inside the semiconductor substrate 1 as shown in Fig. -23-200307322 1 2 but does not reach the surface 3 and the inside 17 of the semiconductor substrate 1. This system is the same as the cut-off area 9b. The cut-off starting region 9a and the cut-off starting region 9b are formed in a column i shape inside the semiconductor substrate 1, respectively, and each has a melt-processed region. As shown in Fig. 10, a laser pattern 19 is provided at a position directly above the reference origin in the surface 3 of the semiconductor substrate 1. With both the laser pattern 19 and OF 1 5, the positions of the cutting start region 9a and the cutting start region 9b formed inside the semiconductor substrate 1 can be grasped. That is, both the laser pattern 19 and the OF 1 5 function as identification patterns for identifying the positions of the cutting start region 9a and the cutting start region 9b formed inside the semiconductor substrate 1. In addition, the laser pattern 19 is formed in a place other than a functional starting point of a circuit formed on a semiconductor substrate in addition to the cut-off starting region, or it can be formed in an A part used by a semiconductor device at a peripheral portion of a semiconductor substrate. In addition, the laser pattern 19 is formed by dissolving the surface 3 of the semiconductor substrate 1 in a clean laser pattern method called a soft mark without causing dust or thermal influence, as in Section 1 3 As shown in the figure, the laser pattern 19 is a concave object with a diameter of 1 μm. Next, a method for manufacturing the semiconductor substrate 1 achieved by the laser processing apparatus 100 will be described with reference to FIGS. 9 and 14. 14 are flowcharts for explaining a method for manufacturing the semiconductor substrate 1. First, the measurement was performed with a spectrophotometer for light absorption characteristics of the semiconductor substrate 1 (not shown). Based on such measurement results, the laser 200307322 radiation source 101 selected is to generate laser light of a laser pattern 19 formed on the surface 3 of the semiconductor substrate 1 and to have a transparent wavelength or Laser light L (S 1 0 1) that absorbs less wavelengths. Next, the thickness of the semiconductor substrate 1 is measured. The amount of movement in the Z-axis direction of the semiconductor substrate 1 (S 1 0 3) is determined based on the thickness measurement result and the refractive index of the semiconductor substrate 1. This amount of movement is such that the condensing point P of the laser light L which is transparent to the semiconductor substrate 1 or absorbs less wavelength is located inside the semiconductor substrate 1, and the laser light located on the surface 3 of the semiconductor substrate 1 The light-concentrating point P of L is used as a reference for the amount of movement in the Z-axis direction of the semiconductor substrate 1. This amount of movement is input to the overall control unit 1 2 7. The semiconductor substrate 1 is placed on a support member 107a of the mounting table 107 of the laser processing apparatus 100. The visible light is generated by the observation light source 1 17 and illuminated to the semiconductor substrate 1 (S105). The surface 3 of the semiconductor substrate 1 that has been illuminated is photographed by the imaging element 1 2 1. The photographic data captured by the imaging element 1 2 1 is transmitted to the photographic data processing section 125. Based on such photographic data, the photographic data processing unit 1 2 5 calculates focal data so that the focal point of the visible light of the observation light source 1 1 7 is located on the surface 3 (S 1 07). This focus data is transmitted to the pedestal control unit 1 1 5. The pedestal control unit 1 1 5 moves the z-axis pedestal 1 1 3 in the Z-axis direction based on the focus data (S 1 0 9). As a result, the focal point of the visible light source 7 is arranged on the surface 3 of the semiconductor substrate 1. In addition, the imaging data processing section 125 calculates the enlarged image data of the surface 3 of the semiconductor substrate 1 based on the imaging data. This enlarged image data is transmitted to the monitor 1 2 9 through the overall control unit, whereby the enlarged image of the surface 3 of the semiconductor-based -25- 200307322 board 1 is displayed on the monitor 1 2 9 . Next, in order to make the direction of 0F 1 5 of the semiconductor substrate coincide with the stroke direction of the Y pedestal Π 1, the semiconductor substrate 1 is rotated by the θ pedestal 108 (S 1 11). In addition, the light-concentrating point of laser light used to form a laser pattern 19 on the surface 3 of the semiconductor substrate 1 is formed at a position directly above the reference origin of the surface 3 of the semiconductor substrate 1 by the X-axis stage 1 〇9, the Y-axis pedestal 11 and the Z-axis pedestal 113 are used to move the semiconductor substrate 1 (S 1 1 3). Laser light is irradiated in this state, and a laser pattern 19 is formed directly above the reference origin on the surface 3 of the semiconductor substrate 1 (S115). After that, the movement data input in advance to the overall control unit 127 determined in step S103 is transmitted to the pedestal control unit 1 1 5. The pedestal control unit 1 1 5 moves the semiconductor substrate 1 toward the Z-axis direction by the Z-axis pedestal 113 at a position where the light-concentrating point P of the laser light L is formed inside the semiconductor substrate 1 based on the movement amount data. (S 117). Next, a laser light L is generated by the laser light source 101, and the laser light L is irradiated onto the semiconductor substrate 1. The light-condensing point P of the laser light L is located inside the semiconductor substrate 1, and therefore, the melting process region is formed only inside the semiconductor substrate 1. Further, the semiconductor substrate 1 is moved by the X-axis pedestal 109 or the Y-axis pedestal 111, and inside the semiconductor substrate 1, the cut-off starting region 9a extending in a direction parallel to the OF 15 direction and along the The cutting start region 9b extending perpendicular to the OF 1 5 direction is formed from the reference origin at a plurality of predetermined intervals (S 1 1 9), and the semiconductor substrate 1 according to the first embodiment is manufactured. In addition, while the semiconductor substrate 1 is illuminated by infrared through the infrared light 1 1 6 and the outer line is red-26-200307322, if the image data processing section is used; 2 2 5 and the imaging lens 1 2 3 and the imaging element 1 When the observation surface of 21 is matched with the inside of the semiconductor substrate 1, the cut-off starting area 9a and the cut-off starting area 9b formed inside the semiconductor substrate 1 are photographed, and imaging data is acquired, and can be displayed on the monitor 1 2 9. As described above, the semiconductor substrate 1 according to the first embodiment is such that the light-condensing point P meets inside the semiconductor substrate 1 and the peak power density at the light-condensing point p is 1 × 10 (W / cm2). Under the above conditions and the pulse amplitude is 1 // s or less, a molten processed region is formed in the semiconductor substrate by multiphoton absorption by irradiating the laser light L. In the irradiation of the laser light L obtained by such multiphoton absorption, the surface 3 of the semiconductor substrate 1 cannot be melted because the surface 3 of the semiconductor substrate 1 is hardly absorbed. Therefore, in the manufacturing process of the semiconductor device, a functional element can be formed on the surface 3 of the semiconductor substrate 1 by a conventional procedure. In addition, since the inner surface 17 of the semiconductor substrate 1 is not melted, it is needless to say that the inner surface 17 of the semiconductor substrate 1 can be processed in the same manner as the surface 3 of the semiconductor substrate 1. In the semiconductor substrate 1 according to the first embodiment, a cut-off starting region 9a and a cut-off starting region 9b having a melt-processed region are formed inside the semiconductor substrate 1. After the melt-processed region is formed inside the semiconductor substrate 1, division is performed on the semiconductor substrate 1 with a small force in order to use the melt-processed region as a starting point. Therefore, the cut-off region 9a and the cut-off point can be formed. The region 9b divides and cuts the semiconductor substrate 1 with high accuracy. Therefore, in the manufacturing process of the semiconductor device, there is no need to perform cutting processing or heating and melting processing after the formation of functional elements such as -27-200307322, which are conventionally known, such as' cut off the starting area 9 a and cut off the starting area 9 b. The semiconductor substrate 1 can be cut only by abutting the blade edge to the inside 17 of the semiconductor substrate 1. Thus, the functional element can be prevented from being damaged by cutting the semiconductor substrate 1 after the functional element is formed. Moreover, in the semiconductor substrate 1 according to the first embodiment, the laser pattern! Both 9 and OF15 serve as a reference for the positions of the cutting start region 9 a and the cutting start region 9 b formed inside the semiconductor substrate 1. Therefore, in the manufacturing process of the semiconductor device, the positions of the cut-off starting region 9 a and the cut-off starting region 9 b formed inside the semiconductor substrate 1 are grasped according to the laser patterns 19 and OF 15, and the map of the functional elements can be performed. Manufacturing, cutting of the semiconductor substrate 1 and the like. In addition, after the melt-processed region is formed inside the semiconductor substrate 1, the melt-processed region is used as a starting point (that is, along the cut-off start region 9a and the cut-off start region 9b), even if an external force is not intentionally applied, In some cases, division may occur in the semiconductor substrate 1. Whether such division has reached the surface 3 or the inside 17 of the semiconductor substrate 1 is related to the position of the melt-processed area in the thickness direction of the semiconductor substrate 1 or to the position of the melt-processed area for the thickness of the semiconductor substrate 1. size. Therefore, by adjusting the position or size of the fusion processing region formed inside the semiconductor substrate 1, various controls can be performed, that is, in the manufacturing process of the semiconductor device, by passing the semiconductor substrate 1 through a loop or by The heating cycle can prevent the division from reaching the surface 3 and the inside 17 of the semiconductor substrate 1, or the division can reach the table 200307322 surface 3 and the inside 17 of the semiconductor substrate 1 just before cutting. [Second Embodiment of Semiconductor Substrate] A second embodiment of a semiconductor substrate according to the present invention will be described with reference to Figs. 15 to 18. The semiconductor substrate 1 according to the second embodiment is a disc-shaped G a A s wafer with a thickness of 3 5 0 // m and an outer diameter of 4 inches. As shown in FIG. 15, the peripheral portion of the semiconductor substrate 1 is used. The partial cut is straight and OF15 is formed. Such a semiconductor substrate 1 has an outer edge portion 3 1 along the outer edge (outside portion of the two-point chain line in FIG. 15), and an inner portion 32 in the outer edge portion 31 (2 in FIG. 15) The inner part of the dot chain line) is the same as the semiconductor substrate 1 of the first embodiment, and is formed with a cut-off starting region 9a extending parallel to the 0F 15 direction and perpendicular to the OF1 5 direction. The plurality of cutting start regions 9b are extended. In this way, in order to form the cut-off starting areas 9a, 9b into a grid pattern 'inside the inner portion 32, the inner portion 32 is partitioned into a plurality of rectangular partition portions 33. In the manufacturing process of a semiconductor device, a functional element is formed in each of the partitions 33, and then the semiconductor substrate 1 is cut along the cutting start regions 9a and 9b. Each of the partitions 33 is The formation corresponds to each semiconductor wafer. On the other hand, as shown in FIG. 16, among the plurality of partition portions 33, the corner portion 3 3 a on the side of the outer edge portion 31 on the side of the outer edge portion 3 3 on the side of the outer edge portion 3 i is the starting point of the cross cutting. The region 9a and the cutting start region 9b are formed. That is, in the corner portion 33a, the cutting start area 9a ends beyond the cutting start area 9b, and the cutting start area 9b ends beyond the cutting start area 9a. This-29- 200307322, the so-called "segment 33 on the side of the outer edge 31 in the majority segment 33", in other words, can be referred to as "in the majority of the segment 33, The partition portion 3 3 ″ formed adjacent to the outer edge portion 31. Next, a method for manufacturing the semiconductor substrate 1 according to the second embodiment will be described. As shown in Fig. 17, a mask 36 is prepared, and an opening portion 35 having a shape equal to that of the inner portion 32 of the semiconductor substrate 1 is formed. Then, the mask 3 6 is superposed on the semiconductor substrate 1 to expose the inner portion 3 2 from the opening portion 35. Thereby, the outer edge portion 31 of the semiconductor substrate 1 is formed to be covered with the mask 36. In this state, for example, the above-mentioned laser processing device 100 is used, and the light-condensing point is combined inside the semiconductor substrate 1 to irradiate laser light, and multi-photon absorption is formed inside the semiconductor substrate 1 to form a molten processed region. Thereby, the cut-off starting areas 9a, 9b are formed on the laser light incident surface of the semiconductor substrate 1 (that is, the surface of the semiconductor substrate 1 exposed through the opening 35 of the mask 36) to a predetermined distance inside. . At this time, the planned cutting line 5 forming the scanning line of the laser light is set in a grid shape based on OF 15. However, when the starting point 5 a and the end point 5 b of each of the planned cutting lines $ are located on the mask 36. The reason is that the inner portion 32 of the semiconductor substrate 1 is irradiated with laser light under the same conditions. Thereby, even if the melt-processed region formed on the inside of the inner portion 32 can be formed in almost the same state at any place, precise cut-off starting regions 9a and 9b can be formed. In addition, the starting point 5 a and the end point 5 b of each of the planned cutting lines 5 may be located near the boundary between the inner portion 3 2 and the outer edge portion 3 1-30- 200307322 of the semiconductor substrate 1 without using the mask 3 6. By irradiating with laser light along the respective cut-off lines 5, a cut-off starting region 9a, 9b can be formed inside the inner portion 32. As described above, if the semiconductor substrate 1 according to the second embodiment is used, At this time, for the same reason as for the semiconductor substrate 1 of the first embodiment, in the manufacturing process of the semiconductor device, a functional element can be formed on the surface of the semiconductor substrate 1, and after the functional element is formed, the semiconductor element can be formed by the semiconductor substrate. The cutting of 1 prevents damage to the functional element. In addition, the cutting start regions 9a and 9b are formed inside the inner portion 32 of the semiconductor substrate 1. Since the cutting start regions 9a and 9b are not formed in the outer edge portion 31, the mechanical strength of the entire semiconductor substrate 1 is improved. . Therefore, in carrying out the transportation process of the semiconductor substrate 1 or the heating process for forming a functional element, it is possible to prevent the semiconductor substrate 1 from being cut unexpectedly. In addition, the corner portion 3 3 a of the partition portion 33 located on the side of the outer edge portion 31 is formed by cutting off the starting areas 9 a and 9 b. Therefore, even in the corner portion 3 3 a, The cutting starting areas 9a and 9b which are the same as those of the other portions of the partition portion 33 can be surely formed, and have good shapes. Therefore, when the semiconductor substrate 1 is cut, chipping or cracking can be prevented from occurring on the semiconductor wafer corresponding to the partition portion 33. In addition, as shown in FIG. 18, the cut-off starting regions 9a and 9b are housed inside the semiconductor substrate 1 and are not exposed to the outside. Therefore, the melting of the cut-off starting regions 9a and 9b can also be prevented. Generation of gas while processing the area. -31- 200307322 In addition, by forming the melt-processed regions constituting the cut-off starting regions 9 a and 9 b inside the semiconductor substrate 1, it is expected to have a gettering effect of trapping impurities, and it will be formed in the manufacture of semiconductor devices In the procedure, impurities such as heavy metals can be removed from the active area of the device. This is the same as the semiconductor substrate 1 in the first embodiment. [Examples of a method of manufacturing a semiconductor wafer and a semiconductor device] An example of a method of manufacturing a semiconductor wafer and a semiconductor device according to the present invention will be described with reference to FIG. 19. Fig. 19 is a perspective view of a semiconductor wafer 21 according to the embodiment. The semiconductor wafer 21 according to the first embodiment is one formed as shown below. That is, using the semiconductor substrate 1 related to the above-mentioned Embodiment 1 or Embodiment 2, in the manufacturing process of the semiconductor device, the cut pattern formed inside the semiconductor substrate 1 will be grasped based on the laser pattern 19 and 0 F 1 5. The positions of the cut-off starting region 9 a and the cut-off starting region 9 b are formed on the surface 3 of the semiconductor substrate 1 by a plurality of functional elements 23 by patterning. In addition, after undergoing inspection procedures such as a probe test, according to the laser pattern 19 and 0 F 1 5, they are abutted only along the cutting edge region 9 a and 9 b, but only by the blade edge. The semiconductor substrate 1 can be cut to the inside 17 of the semiconductor substrate 1 to obtain a semiconductor wafer 21. As shown in FIG. 15, the semiconductor wafer 21 thus formed is surrounded by a cut surface 25, and the cut surface 25 of the end surface of the semiconductor wafer 21 has a cut starting region 9 a. Or cut off the starting area 9b. Since the cut-off starting region 9a and the cut-off starting region 9b are both formed with a melt-processed region, the semiconductor wafer 21 is formed on the cut surface 25 and has a melt-processed region of -32- 200307322. As described above, if the semiconductor wafer 21 according to the embodiment is used, the cut surface 25 is protected by melting the processing area, so that the generation of chips or cracks in the cut surface 25 can be prevented. . In addition, since the peripheral portion of the semiconductor wafer 21 is surrounded by the cut surface 25, the peripheral portion of the semiconductor wafer 21 is formed so as to be surrounded by the melt-processed region, whereby the flexural strength of the semiconductor wafer 21 can be made. Promotion. Although the embodiments of the present invention have been described in detail above, it should be understood that the present invention is not limited to the above embodiments. In the above-mentioned embodiment, the laser pattern and OF are provided on the surface of the semiconductor substrate as the identification pattern for identifying the position of the cut-off starting region formed inside the semiconductor substrate. A laser pattern, a pull line, or the like is provided with a recognition pattern on the surface of the semiconductor substrate by various methods. In the above-mentioned embodiment, the cutting starting region is formed inside the semiconductor substrate in a grid pattern. However, the cutting starting region is formed by laser processing, so it can follow a line of any shape. To form the cut-off area. In addition, although the semiconductor wafer of the above-mentioned embodiment is such that the peripheral edge portion is surrounded by the cut surface, even if only a part of the peripheral edge portion is used as the cut surface, the molten processed area can still be prevented from being cut on the cut surface. The occurrence of debris or cracking on the semiconductor wafer can increase the bending strength of the semiconductor wafer. [Features for Industrial Utilization] As explained above, if the present invention uses -33-200307322 to be irradiated with laser light, it can be modified by multiphoton absorption formed at the spot of the laser light. A mass region is formed inside the semiconductor substrate. That is, such a modified region is such that the condensing point of the laser light is condensed inside the semiconductor substrate, and a so-called multi-photon absorption phenomenon is generated at the position of the condensing point to be formed on the semiconductor substrate. internal. In the irradiation of the laser light obtained by generating such multiphoton absorption, there is almost no absorption of the laser light on the surface of the semiconductor substrate, so that the surface of the semiconductor substrate is not melted. Therefore, in the semiconductor device manufacturing process, functional elements can be formed on the surface of a conventional semiconductor substrate. In addition, in the case of the present invention, the cutting start region is formed inside the semiconductor substrate by modifying the region. After the modified region is formed inside the semiconductor substrate, the modified region is used as a starting point, and cracks are generated on the semiconductor substrate with a small force. Therefore, the cutting along the starting region can be performed with higher accuracy. To cut and cut the semiconductor substrate. Therefore, in the manufacturing process of the semiconductor device, it is formed without cutting or heating-melting processing after the formation of a conventional functional element, and the destruction of the functional element caused by the cutting of the semiconductor substrate can be prevented. [Brief Description of the Drawings] FIG. 1 is a plan view of a semiconductor substrate in laser processing performed by the laser processing method related to this embodiment. FIG. 2 is a cross-sectional view taken along line η of the semiconductor substrate shown in FIG. Fig. 3 is a plan view of a semiconductor substrate after laser processing by the laser processing method related to this embodiment. -3 4- 200307322 Fig. 4 is a cross-sectional view taken along the line iv-lV of the semiconductor substrate shown in Fig. 3. Fig. 5 is a cross-sectional view taken along the line v_v of the semiconductor substrate shown in Fig. 3. Fig. 6 is a plan view of a semiconductor substrate cut by the laser processing method according to this embodiment. FIG. 7 is a picture showing a photograph of a cross section in a part of a silicon wafer cut by the laser processing method according to this embodiment. Fig. 8 is a graph showing the relationship between the wavelength of laser light and the internal transmittance of a sand substrate in the laser processing method according to this embodiment. FIG. 9 is a schematic configuration diagram of the laser processing apparatus according to this embodiment. FIG. 10 is a perspective view of the semiconductor substrate according to the first embodiment. Fig. 11 is a cross-sectional view taken along the line XI-XI of the semiconductor substrate shown in Fig. 10. FIG. 12 is a sectional view taken along the line XII-XII of the semiconductor substrate shown in FIG. 10. Fig. 13 is a photograph showing a photo of a laser pattern arranged on the surface of a semiconductor substrate shown in Fig. 10; Fig. 14 is a flowchart for explaining a method for manufacturing a semiconductor substrate according to the first embodiment. FIG. 15 is a plan view of a semiconductor substrate related to Embodiment 2. FIG. FIG. 16 is a partial enlarged view of the semiconductor substrate disclosed in FIG. 15. FIG. 17 is a plan view for explaining a manufacturing method of the semiconductor substrate shown in FIG. 15. -35- 200307322 FIG. 18 is a cross-sectional view taken along a line 乂 ¥ 111-X V 111 of the semiconductor substrate shown in FIG. 15. FIG. 19 is a perspective view of a semiconductor wafer according to the embodiment. [Description of Representative Symbols of Main Section] E. : Band gap L: Laser light P: Condensing point 1: Semiconductor substrate 3: Surface 5 a: Start point 5 b: End point 5: Cut line 7: Modified area 9a, 9b: Cut start area 1 1: Silicon Wafer 1 3: Melt processing area 15: Orientation plane 17: Inside 19: Laser pattern 2 1: Semiconductor wafer 2 5: Cut surface 3 1: Outer edge portion 3 2: Inner portion 3 3: Area Partition-3 6 _ 200307322 3 5: Opening 36: Mask
1 〇 〇 :雷射加工裝置 1 〇 1 :雷射光源 1 〇 2 :光源控制部 1 0 3 :分色鏡 1 〇 5 :聚光用透鏡 1 0 7 :載置台 1 〇 7 a :支撐部 108 : 0台座 1 0 9 : X軸台座 1 1 1 : Y軸台座 1 1 3 : Z軸台座 1 1 5 :台座控制部 1 1 6 :紅外透過照明 1 1 7 :觀察用光源 1 1 9 :光束分離器 1 2 1 :拍攝元件 1 2 3 :成像透鏡 1 2 5 :拍攝資料處理部 1 2 7 :整體控制部 1 2 9 :監視器 -37-1 〇〇: Laser processing device 1 〇1: Laser light source 1 〇2: Light source control section 103: Dichroic mirror 1 〇5: Condensing lens 107: Mounting table 1 〇7 a: Support section 108: 0 pedestal 1 0 9: X-axis pedestal 1 1 1: Y-axis pedestal 1 1 3: Z-axis pedestal 1 1 5: pedestal control unit 1 1 6: Infrared transmitted illumination 1 1 7: Observation light source 1 1 9: Beam splitter 1 2 1: Imaging element 1 2 3: Imaging lens 1 2 5: Image processing unit 1 2 7: Overall control unit 1 2 9: Monitor-37-