JP4804183B2 - Semiconductor substrate dividing method and semiconductor chip manufactured by the dividing method - Google Patents

Semiconductor substrate dividing method and semiconductor chip manufactured by the dividing method Download PDF

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JP4804183B2
JP4804183B2 JP2006077218A JP2006077218A JP4804183B2 JP 4804183 B2 JP4804183 B2 JP 4804183B2 JP 2006077218 A JP2006077218 A JP 2006077218A JP 2006077218 A JP2006077218 A JP 2006077218A JP 4804183 B2 JP4804183 B2 JP 4804183B2
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laser beam
semiconductor substrate
region
dividing
modified region
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JP2007258236A (en
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耕司 久野
和彦 杉浦
宗生 田村
哲夫 藤井
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株式会社デンソー
浜松ホトニクス株式会社
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  The present invention relates to a semiconductor substrate dividing method for dividing a semiconductor substrate in its thickness direction and a semiconductor chip manufactured by the dividing method.

  Conventionally, in a dicing process for separating a silicon wafer (hereinafter referred to as a wafer) on which a semiconductor integrated circuit or a MEMS (Micro Electro Mechanical Systems) is formed into each semiconductor chip, a dicing blade in which diamond abrasive grains are embedded is used to form the semiconductor chip. It was divided.

  However, in the dicing process using such a blade, (1) the cutting margin is necessary when cutting with the blade, so the number of semiconductor chips that can be taken from one wafer is reduced by the margin, and the yield is reduced. (2) In order to prevent water used to prevent seizure due to frictional heat when cutting, etc., a protective device such as capping that covers the wafer surface is used to prevent the water from adhering to the semiconductor chip. There is a problem that it is necessary and maintenance man-hours increase accordingly.

Therefore, in recent years, studies and researches on a dicing process (laser dicing) using laser light have been advanced. For example, Patent Document 1 below discloses a wafer processing technique using a laser. FIG. 11 is an explanatory diagram showing a dicing process using laser light. FIG. 11A is an explanatory diagram of a modified region forming process by laser light irradiation, and FIG. 11B is an explanatory diagram of a dividing process.
As shown in FIG. 11A, the laser head H that irradiates the laser light L includes a condenser lens CV that condenses the laser light L, and condenses the laser light L at a predetermined focal length. In the modified region forming step, on the planned dividing line DL for dividing the wafer W under the laser beam irradiation conditions set so that the condensing point P of the laser beam L is formed at a depth d from the surface of the wafer W. The laser head H is moved along (front side in the figure), and the laser beam L is irradiated from the surface of the wafer W. As a result, a modified region K by multiphoton absorption is formed in a path of depth d where the condensing point P of the laser beam L is scanned.
Here, multiphoton absorption means that a substance absorbs a plurality of the same or different photons. Due to the multiphoton absorption, a phenomenon called optical damage occurs at the condensing point P of the semiconductor substrate W and in the vicinity thereof, thereby inducing thermal strain, generating cracks in the portion, and a layer in which the cracks are gathered. That is, the modified region K is formed.
When the laser beam L is a pulse wave, the intensity of the laser beam L is determined by the peak power density (W / cm 2 ) at the focal point P. For example, the peak power density is 1 × 10 8 (W / cm 2 ) or more. Multiphoton absorption occurs under conditions where the pulse width is 1 μs or less. As the laser beam L, for example, a laser beam by a YAG (Yttrium Aluminum Garnet) laser is used. The wavelength of the laser beam L is, for example, a wavelength in the infrared light region of 1064 nm.
Subsequently, as shown in FIG. 11B, by applying a stress in the in-plane direction of the semiconductor substrate W (directions indicated by arrows F2 and F3 in the figure), the substrate thickness starts from the modified region K. The crack C is advanced in the vertical direction, and the semiconductor substrate W is divided along the division line DL.
JP 2002-192367 A

As shown in FIG. 12, the condensing point P of the laser light L irradiated to the wafer W is set so that the modified region K is formed inside the wafer W. However, when the laser beam L is applied to a portion that has been chamfered to prevent chipping of the outer peripheral edge M, the wafer W and the air have different refractive indexes, so that the laser beam L is condensed. The point may be shifted to a condensing point P1 above the originally planned condensing point P, and the condensing point P1 of the laser light L may be matched with the surface of the portion that is chamfered. Then, ablation occurs where the surface of the wafer W is melted by the irradiation of the laser beam L, so that the silicon q is scattered and particles are generated. Such particles attach to the semiconductor chip before or after separation, thereby causing malfunction of the semiconductor integrated circuit and the MEMS, and can directly lead to a decrease in product yield and quality. The above phenomenon can occur when the laser beam L is irradiated to a portion or stepped portion that is recessed from the surface of the wafer W other than the portion that is chamfered.
Further, in the modified region forming step, by adjusting the depth d of the condensing point P of the laser beam L, the modified region having an arbitrary number of layers at an arbitrary depth within the thickness range of the semiconductor substrate 21. K can be formed. For example, when the thickness is relatively thick, the condensing point P is moved in the thickness direction to form the modified region K continuously in the thickness direction or at a plurality of locations, thereby dividing the semiconductor substrate 21. Can be made easier.
However, in this case, every time a new modified region K is formed, the laser beam L scans the chamfered portion, so that the influence of particle generation due to ablation increases.

  Accordingly, an object of the present invention is to realize a semiconductor substrate dividing method capable of preventing generation of particles due to ablation and a semiconductor chip manufactured by the dividing method.

In order to achieve the above object, according to the first aspect of the present invention, in the invention according to claim 1, a laser head for irradiating a laser beam along a division line for dividing the semiconductor substrate in its thickness direction is provided on the semiconductor substrate. A modified region forming step of forming a modified region by multiphoton absorption at the focused point by irradiating a laser beam with a focused point inside the semiconductor substrate while moving relative to the semiconductor substrate. A semiconductor substrate cutting method comprising: a cutting step of dividing the semiconductor substrate that has undergone a quality region forming step, starting from the modified region, in a thickness direction along the line to be cut to obtain a semiconductor chip. In the modified region forming step, the first region including the entire chamfered portion from the outer peripheral end portion of the semiconductor substrate is not irradiated with the laser beam, and the modified region is formed. For forming process In the second region having a recess or step set on the planned split line when the laser beam is irradiated along the planned split line, a blocking means for blocking the laser light is provided in the laser beam. The technical means is used in which the laser beam is blocked by being disposed in the optical path and the second region is not irradiated with the laser beam.
In addition, the said condensing point is a location where the laser beam condensed.

According to a second aspect of the present invention, in the method for dividing a semiconductor substrate according to the first aspect, when the laser beam is irradiated along the planned dividing line in the modified region forming step, the first region is formed. Then, technical means is used in which the laser beam is blocked by arranging a blocking unit for blocking the laser beam in the optical path of the laser beam.

According to the first aspect of the present invention, in the modified region forming step, the first region including the entire chamfered portion from the outer peripheral end portion of the semiconductor substrate is not irradiated with the laser beam in the scheduled division line. The generation of particles due to ablation can be prevented.
Further, when the laser beam is irradiated along the planned dividing line in the modified region forming step, a blocking means for blocking the laser beam is provided in the second region having the recess or step set on the planned dividing line. By arranging in the optical path of the laser beam, the laser beam is blocked and the second region is not irradiated with the laser beam, so that generation of particles due to ablation can be prevented.
Therefore, it is possible to realize a method for dividing a semiconductor substrate that can prevent generation of particles due to ablation. That is, since particles do not adhere to the semiconductor chip, it is possible to prevent a decrease in product yield and quality due to generation of particles.

According to the second aspect of the present invention, when the laser beam is irradiated along the planned split line in the modified region forming step, the blocking means for blocking the laser beam is provided in the optical path of the laser beam in the first region. for blocking the laser beam, the generation of particles due to abrasion can be prevented by placing the.
Further, since the laser beam irradiation is not stopped, there is no time lag for irradiating the laser beam again after the laser beam is once stopped.

[First Embodiment]
A first embodiment of a semiconductor substrate cutting method according to the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram illustrating a configuration example of a semiconductor substrate that is divided by the cutting method according to the first embodiment. FIG. 1A is an explanatory plan view of the surface of a wafer, and FIG. 1B is an enlarged cross-sectional view taken along the line 1B-1B in FIG. FIG. 2 is an explanatory diagram of a method for stopping the irradiation of laser light in the modified region forming step.

As shown in FIG. 1A, a wafer 20a is prepared. The wafer 20a is formed by arranging a plurality of chips Dev formed on a surface 21a of a thin disk-shaped semiconductor substrate 21 made of silicon through a diffusion process or the like in a grid pattern. An orientation flat showing the crystal orientation is formed in the part. These chips Dev are each divided along the planned division line DL by a dicing process, and then completed as a packaged IC or LSI through various processes such as a mounting process, a bonding process, and an encapsulation process. In the present embodiment, the wafer 20a can form a silicon layer that serves as a support substrate for the chip Dev.
As shown in FIG. 1B, a chamfered portion 21b having a chamfered outer periphery is formed on the wafer 20a in order to prevent the outer peripheral edge portion M from being chipped.

  First, one of the planned dividing lines DL shown in FIG. 1A is scanned with a laser beam for wafer detection to detect the outer peripheral end 21c (FIG. 1B). Next, as shown in FIG. 2, a region 1 having a predetermined distance (for example, about 1 mm) in the radial direction from the outer peripheral end 21 c and a region 1 including the chamfered portion 21 b in the planned dividing line DL A region 2 composed only of the flat surface 21a is set inside. Here, the direction toward the outer peripheral edge M of the division planned line DL is referred to as “outside”, and the opposite direction is referred to as “inside”.

As shown in FIG. 2, the laser head 31 that irradiates the laser light L includes a condensing lens CV that condenses the laser light L, and can condense the laser light L at a predetermined focal length. Here, the condensing point P of the laser beam L is set so as to be formed at a depth d from the surface 21a of the semiconductor substrate 21 in the thickness direction.
Next, the laser head 31 is scanned along the planned division line DL from the outer side to the inner side of the outer peripheral end 21c of the semiconductor substrate 21 (in the direction of arrow F4 in the figure). At this time, the irradiation of the laser beam L is stopped in the region 1 and the laser beam L is irradiated only in the region 2. Further, in the region 1 (not shown) provided at the other end of the division planned line DL following the region 2, the irradiation of the laser light L is stopped.
Thereby, in the area | region 1, since the condensing point P2 of the laser beam L does not match by the chamfer 21b, the ablation on the surface of the chamfer 21b can be prevented. In the region 2, the modified region K is appropriately formed in the path of the depth d where the condensing point P of the laser beam L is scanned.
Since the region 1 is a narrow region of about 1 mm from the outer peripheral end 21c, cracks easily propagate from the modified region K to the region 1 in the dividing step. Therefore, cracks are not deflected even if the modified region K is not formed in the region 1, and the chip Dev can be manufactured by dividing the semiconductor substrate easily and accurately in the thickness direction.
In addition, when the laser beam L is repeatedly irradiated along the same segmentation planned line DL while changing the depth d, the laser head 31 may be scanned only in a range where the laser beam L can be irradiated onto the region 2. .

[Effect of the first embodiment]
(1) In the modified region forming step, when the laser beam L is irradiated along the planned division line DL, the region 1 set to the planned division line DL from the outer peripheral end 21c is irradiated with the laser beam L. Since the laser beam L is not irradiated by stopping, the generation of particles due to ablation can be prevented.
Therefore, a method for dividing the semiconductor substrate 21 that can prevent the generation of particles due to ablation can be realized. That is, since particles do not adhere to the semiconductor chip, it is possible to prevent a decrease in product yield and quality due to generation of particles.

[Second Embodiment]
A second embodiment of the semiconductor substrate cutting method according to the present invention will be described with reference to the drawings. FIG. 3 is an explanatory diagram of a method for stopping the irradiation of the laser beam by the shutter in the modified region forming step. FIG. 4 is an explanatory diagram of a method for blocking laser light by a cover in the modified region forming step. FIG. 5 is an explanatory diagram of a method of blocking the laser beam with a protective layer opaque to the laser beam in the modified region forming step.
In addition, about the structure similar to 1st Embodiment, while using the same code | symbol, description is abbreviate | omitted.

FIG. 3 shows a method of using a shutter that blocks the laser light L. Inside the laser head 31, a shutter 41 that blocks the laser light L is provided so as to be inserted into and removed from the optical path of the laser light L. The shutter 41 is made of a material that is opaque to the laser beam, such as stainless steel or aluminum, or a material that reflects the laser beam, and is inserted into the optical path of the laser beam L so that the laser beam L with respect to the semiconductor substrate 21 is emitted. Irradiation can be blocked.
In this embodiment, the laser head 31 is scanned from the outer side to the inner side (in the direction of arrow F4 in the figure) from the outer peripheral end portion 21c of the semiconductor substrate 21 in a state where the laser beam L is irradiated from the laser head 31. In the region 1, the shutter 41 is inserted in the optical path of the laser light L, and the laser light L is blocked from the semiconductor substrate 21. In the region 2, the shutter 41 is removed from the optical path of the laser light L, and the semiconductor substrate 21 is irradiated with the laser light L. Further, in the region 1 (not shown) provided at the other end of the division line DL following the region 2, the shutter 41 is inserted in the optical path of the laser beam L to block the laser beam L from the semiconductor substrate 21. .
Thereby, in the area | region 1, since the condensing point P2 does not match by the chamfer 21b, ablation can be prevented. In the region 2, the modified region K is appropriately formed in the path of the depth d where the condensing point P of the laser beam L is scanned. Further, since the laser beam irradiation is not stopped, there is no time lag for starting the laser beam L again after the laser beam L is once stopped.

  The shutter 41 may be provided in the optical path of the laser light L inside a laser light irradiation device (not shown) for irradiating the laser light. Further, it may be provided between the laser head 31 and the semiconductor substrate 21. In addition, the shutter 41 is exemplified as means for blocking the laser beam L, but the laser beam L is blocked by changing the angle of a mirror (not shown) disposed in the beam path in order to change the path of the laser beam L. You may use the method of doing.

Next, with reference to FIGS. 4 and 5, a modification example of the method for dividing the semiconductor substrate 21 according to the first embodiment will be described.
FIG. 4 shows a method in which a cover for blocking the laser beam L is placed above the region 1 of the semiconductor substrate 21. The cover 51 that blocks the laser light L is formed so as to cover the upper part of the region 1 of the semiconductor substrate 21 up to the boundary between the region 1 and the region 2. Similar to the shutter 41, the cover 51 is formed of a material that is opaque to the laser light L or a material that reflects the laser light L.
In this modified example, the laser head 31 is scanned from the outer side to the inner side (in the direction of arrow F4 in the figure) from the outer peripheral end 21c of the semiconductor substrate 21 in a state where the laser head 31 is irradiated with the laser beam L. In the region 1, since the laser beam L is blocked by the cover 51, the condensing point P2 does not match at the chamfered portion 21b, so that ablation can be prevented. In the region 2, the modified region K is appropriately formed in the path of the depth d where the condensing point P of the laser beam L is scanned. Further, since the laser beam irradiation is not stopped, there is no time lag for starting the laser beam L again after the laser beam L is once stopped.
The shape of the cover 51 may cover the entire outer periphery of the semiconductor substrate 21, or may cover only the planned dividing line DL and its vicinity.

FIG. 5 shows a method of forming a protective layer that is opaque to the laser beam L on the surface of the chamfered portion 21 b in the region 1. A protective layer 61 that is opaque to the laser beam L is formed to cover the chamfered portion 21 b from the outer peripheral end portion 21 c to the boundary between the region 1 and the region 2. The protective layer 61 can be formed by sputtering a metal film such as aluminum or titanium, or applying clay or resin paint.
The operation and effect of this are the same as those of the cover 51 described above. Furthermore, since the protective layer 61 is formed directly on the semiconductor substrate 21, it is not necessary to accurately determine the positional relationship between the semiconductor substrate 21 and the member that shields the laser light L as in the case where the cover 51 or the like is used.

[Effects of Second Embodiment]
(1) When irradiating the laser beam L along the planned split line DL in the modified region forming step, in the region 1, a cover that blocks the laser beam L is disposed in the optical path of the laser beam L. Since the laser beam L is blocked by covering the region 1 or forming the protective layer 61 opaque to the laser beam L on the chamfered portion 21b, generation of particles due to ablation can be prevented.
Further, since the irradiation of the laser beam L is not stopped, there is no time lag for irradiating the laser beam L again after the laser beam L is stopped once.

[Third Embodiment]
A third embodiment of the semiconductor substrate cutting method according to the present invention will be described with reference to the drawings.
FIG. 6 is an explanatory diagram of a method for widening the gap between the laser head 31 and the semiconductor substrate 21 in the modified region forming step. FIG. 7 is an explanatory diagram of a modified example of a method for widening the distance between the laser head 31 and the semiconductor substrate 21 in the modified region forming step. FIG. 8 is an explanatory diagram of a method of adjusting the focus of the laser beam by the laser beam focal length adjusting means in the modified region forming step.
In addition, about the structure similar to 1st Embodiment or 2nd Embodiment, it abbreviate | omits description while using the same code | symbol.

As shown in FIG. 6, first, as the distance between the laser head 31 and the surface 21a of the semiconductor substrate 21, the distance D1 for forming the modified region K at the position of the depth d of the semiconductor substrate 21, and in the air A distance D2 larger than the focal length of the laser light L is set.
Next, the laser head 31 is scanned from the outer end 21c of the semiconductor substrate 21 toward the inner side (in the direction of arrow F4 in the figure), and the semiconductor substrate 21 is irradiated with the laser beam L. Here, when the region 1 is irradiated with the laser light L, the moving means provided in the laser light irradiation device (not shown) is set so that the distance between the laser head 31 and the surface 21a of the semiconductor substrate 21 is the distance D2. The laser head 31 is moved upward to move the laser head 31 away from the semiconductor substrate 21. When the region 2 is irradiated with the laser light L, the moving means moves the laser head 31 downward so that the distance between the laser head 31 and the surface 21a of the semiconductor substrate 21 is the distance D1.
According to this, when the region 1 is irradiated with the laser light L, the distance between the laser head 31 and the surface 21a of the semiconductor substrate 21 is larger than the focal length of the laser light L in the air. The condensing point P2 is in the atmosphere above the semiconductor substrate 21. Since the region 1 is below the condensing point P2, the laser beam L is irradiated to the region 1 in a spread state. Since the spread laser beam L has a low energy density, ablation does not occur in the chamfered portion 21b.
In the region 2, the laser head 31 is moved so that the distance between the laser head 31 and the surface 21a of the semiconductor substrate 21 is the distance D1, so that the condensing point P of the laser beam L is scanned along the path of the depth d. The modified region K can be formed appropriately.

  Further, as shown in FIG. 7, a distance D3 larger than the focal length of the laser beam L in the air is set as an interval between the laser head 31 and the surface 21a of the semiconductor substrate 21, and the region 1 is irradiated with the laser beam. In this case, the semiconductor substrate 21 may be moved downward by a stage (not shown) on which the semiconductor substrate 21 is placed so that the distance between the laser head 31 and the semiconductor substrate becomes the distance D3. The operation and effect by this are the same as the method shown in FIG.

Next, with reference to FIG. 8, a modified example of the method for dividing the semiconductor substrate 21 according to the third embodiment will be described.
The laser head 31 includes a lens unit 71 for adjusting the focal length of the laser light in the optical path of the laser light L. When the region 1 is irradiated with laser light, the focal length of the laser light L is shortened by the lens unit 71 so that the focal point P3 of the laser light L is in the atmosphere above the semiconductor substrate 21. . At this time, since the region 1 is below the condensing point P3, the laser light L is irradiated to the region 1 in a spread state, so that no ablation occurs in the chamfered portion 21b.
When the region 2 is irradiated with laser light, the lens unit 71 adjusts the condensing point so that the condensing point is aligned with the depth d portion of the semiconductor substrate, so that the condensing point P of the laser light L is scanned. The modified region K can be appropriately formed in the path d.

[Effect of the third embodiment]
(1) When the laser beam L is irradiated along the planned split line DL in the modified region forming step, the focal point P2 of the laser beam L is not aligned with the surface of the region 1, so that the ablation in the chamfered portion 21b is performed. Can prevent the generation of particles.

(2) When irradiating the laser beam L along the planned split line DL in the modified region forming step, in the region 1, the semiconductor substrate is arranged so that the focal point P2 of the laser beam L does not match the surface of the region 1. In order to increase the distance between the laser head 31 and the semiconductor substrate 21 by a method such as moving 21 away from the laser head 31 or moving the laser head 31 away from the semiconductor substrate 21, the collection of the laser light L on the surface of the region 1 is performed. Since the light spot P2 does not match, generation of particles due to ablation in the chamfered portion 21b can be prevented.

(3) When the laser beam L is irradiated along the planned division line DL in the modified region forming step, in the region 1, the focal length of the laser beam L is adjusted by the lens unit 71 for adjusting the focal length of the laser beam L. Since the condensing point P3 of the laser light L does not coincide with the surface of the region 1, the condensing point P3 of the laser light L is made outside the semiconductor substrate 21, so that the particle generated by ablation in the chamfer 21b Occurrence can be prevented.

[Other Embodiments]
(1) FIG. 9 is an explanatory diagram of ablation that may occur when a region having a stepped portion such as a positioning portion is formed on the planned dividing line DL.
As shown in FIG. 9A, when a region having a concave portion such as a positioning portion 81 serving as a reference for positioning the semiconductor substrate 1 is formed on the planned dividing line DL, FIG. As shown, a stepped portion 81a is formed below the surface 21a of the semiconductor substrate 21, and the condensing point P2 of the laser light L is aligned with the stepped portion 81a, and particles may be generated by ablation.
Here, as shown in FIG. 10, a region 3 including a predetermined range before and after the positioning portion 71 on the planned dividing line DL (a recess or a recess set on the planned cutting line according to claim 1). Corresponding to the second region having a stepped portion), and the region 3 is not irradiated with the laser light L or collected by the method used in the first embodiment, the second embodiment, or the third embodiment. The light spot P2 can be prevented from matching. The case where the shutter 41 is used is illustrated in the figure.
Thereby, even when a region having a concave portion such as the positioning portion 71 is formed on the planned dividing line DL, it is possible to prevent generation of particles due to ablation in the stepped portion 81a. Can be formed.

(2) Although the semiconductor substrate made of only silicon is used as the semiconductor substrate 21, the application of the present invention is not limited to this. For example, an oxide film made of silicon oxide is used as the surface 21a of the semiconductor substrate 21. The present invention can also be applied to those formed in (1) or SOI (Silicon On Insulator) wafers.

(3) In the modified region forming step, the laser beam L can be irradiated from the back surface of the semiconductor substrate 21. Since the rear surface of the semiconductor substrate 21 has no cut portions such as positioning portions formed on the front surface 21a, only the outer peripheral edge portion M is used in the first embodiment, the second embodiment, or the third embodiment. By applying the method, particle generation due to ablation can be prevented.

[Correspondence between each claim and embodiment]
The modified region K is the “modified region”, the chip Dev is the “semiconductor chip”, the region 1 is the “first region”, the shutter 41 is the “blocking means”, and the region 3 is “on the line to be divided” Respectively corresponding to a “second region having a recess or step set to”.

FIG. 1A is an explanatory plan view of the surface of a wafer, and FIG. 1B is an enlarged cross-sectional view taken along the line 1B-1B in FIG. It is explanatory drawing of the method of stopping irradiation of a laser beam in a modification area | region formation process. It is explanatory drawing of the method of stopping irradiation of a laser beam with a shutter in a modification area | region formation process. It is explanatory drawing of the method of interrupting | blocking a laser beam with a cover in a modification area | region formation process. It is explanatory drawing of the method of interrupting | blocking a laser beam by the protective layer opaque with respect to a laser beam in a modification area | region formation process. FIG. 11 is an explanatory diagram of a method for widening the distance between the laser head 31 and the semiconductor substrate 21 in the modified region forming step. It is explanatory drawing of the example of a change of the method of widening the space | interval of the laser head 31 and the semiconductor substrate 21 in a modification area | region formation process. It is explanatory drawing of the method of adjusting the focus of a laser beam by the focal distance adjustment means of a laser beam in a modification area | region formation process. FIG. 9A is an explanatory diagram of a positioning portion formed on the planned division line DL, and FIG. 9B is an explanatory diagram of a situation where particles are generated by ablation in the positioning portion. It is explanatory drawing of the method which does not irradiate the laser beam L to the area | region including the predetermined range before and behind a positioning part, or does not match the condensing point P2. FIG. 11A is an explanatory diagram of a modified region forming process by laser light irradiation, and FIG. 11B is an explanatory diagram of a dividing process. In conventional laser dicing, it is explanatory drawing of the condition where a particle generate | occur | produces by ablation.

Explanation of symbols

1 region (first region including the entire chamfered portion from the outer peripheral edge of the semiconductor substrate )
2 area 3 area (2nd area | region which has the recessed part or step part set on the parting plan line)
20a Wafer 21 Semiconductor substrate 21a Surface 21b Chamfer 21c Outer peripheral edge 31 Laser head 41 Shutter
51 Cover 61 Protective Layer 71 Lens Unit 81 Positioning Unit CV Condensing Lens Dev Chip (Semiconductor Chip)
DL Scheduled line K Modified region L Laser light M Outer peripheral edge P, P2, P3 Condensing point W Wafer

Claims (2)

  1. A focusing point is set inside the semiconductor substrate while moving a laser head for irradiating a laser beam relative to the semiconductor substrate along a scheduled cutting line for dividing the semiconductor substrate in the thickness direction. A modified region forming step of irradiating a laser beam and forming a modified region by multiphoton absorption at the condensing point;
    A dividing step of dividing the semiconductor substrate that has undergone the modified region formation step in the thickness direction along the line to be divided from the modified region to obtain a semiconductor chip. In the dividing method,
    In the modified region forming step, the laser beam is not irradiated to the first region including the entire chamfered portion from the outer peripheral end portion of the semiconductor substrate, which is the division line.
    When irradiating the laser beam along the planned dividing line in the modified region forming step, the laser beam is blocked in the second region having a recess or a step set on the planned dividing line. A method for dividing a semiconductor substrate, wherein a blocking means is arranged in an optical path of the laser beam to block the laser beam, and the second region is not irradiated with the laser beam.
  2.   In the modified region forming step, when the laser beam is irradiated along the planned dividing line, a blocking means for blocking the laser beam is arranged in the optical path of the laser beam in the first region. The method for dividing a semiconductor substrate according to claim 1, wherein the laser beam is blocked.
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