TW200302537A - Apparatus and method for cleaning test probes - Google Patents

Apparatus and method for cleaning test probes Download PDF

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Publication number
TW200302537A
TW200302537A TW092101032A TW92101032A TW200302537A TW 200302537 A TW200302537 A TW 200302537A TW 092101032 A TW092101032 A TW 092101032A TW 92101032 A TW92101032 A TW 92101032A TW 200302537 A TW200302537 A TW 200302537A
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Taiwan
Prior art keywords
cleaning device
item
probe cleaning
probe
patent application
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TW092101032A
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Chinese (zh)
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TWI268569B (en
Inventor
Igor Y Khandros
Benjamin N Eldridge
Treliant Fang
Gaetan L Mathieu
Gary W Grube
Michael A Drush
Christopher C Buckholtz
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Formfactor Inc
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00Cleaning by methods involving the use of tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0028Cleaning by methods not provided for in a single other subclass or a single group in this subclass by adhesive surfaces
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/06Preparatory processes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06711Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y10T428/24372Particulate matter
    • Y10T428/2438Coated
    • Y10T428/24388Silicon containing coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31663As siloxane, silicone or silane

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Cleaning In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

A probe cleaning apparatus for cleaning a probe tip use to test semiconductors dies having an abrasive substrate layer an a tacky gel layer on top of the abrasive surface of the abrasive substrate layer. The probe tip is cleaned by passing it through the tacky gel layer so that it comes in contact with the abrasive surface of the abrasive substrate, moving the probe tip across the abrasive surface of the substrate layer, and then removing the probe tip from the successive layers of the cleaning apparatus. The probe tip emerges from the cleaning apparatus free from debris associated with testing the semiconductor dies.

Description

200302537 (1) 玖、發明說明 【發明所屬之技術領域】 本發明大致有關用以在半導體裝置上進行測試之探針 卡。更明確地說,本發明有關淸潔此等探針卡延伸之探針 元件。 【先前技術】 單一半導體(積體電路)裝置(晶粒)通常係使用照 參 相平版印刷術、沈積等習知技術,在一半導體晶圓上形成 數個相同晶粒所製造。通常,此等方法係欲自半導體晶圓 切割(供應)成單一晶粒之前,產生許多功能完備之積體 電路。不過,實際上晶圓本身的特定物理瑕疵與晶圓處理 中的特定瑕疵無可避免地導致某些晶粒「良好」(功能完 備),而某些晶粒爲「.不良」(無功能)。通常,最好於 封裝晶粒之前,可以確認晶圓上哪些晶粒是良好晶粒,而 且自該晶圓切割此等晶粒前確認爲佳。最後,最好使用結 · 合探針卡之晶圓「測試機」與「探測器」,在晶粒上許多 不連續連接墊(搭接或接觸墊)產生相同數量之不連續壓 力連結。以此種方式,在自晶圓切割晶粒之前,可以測試 與使用此等半導體晶粒。晶圓測試裝置的習用組件是「探 針卡」,其上連接許多探針元件,其中該探針元件尖端對 半導體晶粒的個別墊產生壓力連結。 更明確地說,在代表性晶圓測試方法中,將該探針卡 安裝在探測器上,並使探針卡所伸出之探針元件(簡稱爲 -7- (2) 200302537 「探針」)與該晶圓上所形成的墊接觸。此等探針的非排 他性實例包含活性或彈簧接點探針(通常稱爲「彈簧接點 」)或「接點彈簧」),諸如標題爲“Making Microelectronic Spring Contact Elements” 之美國專利 6,184,053、標題爲“Met hod for Manufacturing Electrical200302537 (1) 发明. Description of the invention [Technical field to which the invention belongs] The present invention relates generally to a probe card for testing on a semiconductor device. More specifically, the present invention relates to a probe element for cleaning these probe card extensions. [Previous Technology] A single semiconductor (integrated circuit) device (die) is usually manufactured using conventional techniques such as reference lithography and deposition to form several identical die on a semiconductor wafer. Generally, these methods are intended to produce many fully functional integrated circuits before dicing (supplying) a semiconductor wafer into a single die. However, in fact, certain physical defects of the wafer itself and certain defects in the wafer processing inevitably lead to some die "good" (complete function), and some die ".bad" (non-functional) . In general, it is best to confirm which dies on the wafer are good before packaging the dies, and it is better to confirm these dies before the wafer is cut. Finally, it is best to use wafer “testers” and “probes” that combine probe cards. Many discontinuous connection pads (lap or contact pads) on the die produce the same number of discontinuous pressure connections. In this way, these semiconductor dies can be tested and used before the dies are cut from the wafer. A conventional component of a wafer tester is a "probe card" to which a number of probe elements are connected, wherein the tip of the probe element makes a pressure connection to an individual pad of a semiconductor die. More specifically, in a representative wafer test method, the probe card is mounted on a detector, and the probe element (referred to as -7- (2) 200302537) ") In contact with a pad formed on the wafer. Non-exclusive examples of such probes include active or spring contact probes (commonly referred to as "spring contacts" or "contact springs"), such as US Patent 6,184,053, entitled "Making Microelectronic Spring Contact Elements," "Met hod for Manufacturing Electrical

Contacts, Using a Sacrificaial Member” 之美國專利 5,476,211、標題爲 “Flexible Contact Structure with an Electrically Conductive Shell” 之美國專利 5,9 1 7,707、標題 爲“ Method of Modifying the Thinkness of a Plating on a Member by Creating a Temperature Gradient on the Member, Application for Employing Such a Method, and StructuresContacts, Using a Sacrificaial Member "U.S. Patent 5,476,211, U.S. Patent 5,9 1 7,707, entitled" Flexible Contact Structure with an Electrically Conductive Shell "," Method of Modifying the Thinkness of a Plating on a Member by Creating a Temperature Gradient on the Member, Application for Employing Such a Method, and Structures

Resulting from Such a Method” 之美國專利 6,110,823、標題 爲 “ L i t h o g r a p h i c C ο n t a c t E1 e m e n t s ” 之美國專利 6,2 5 5,1 2 6, 以及標題爲 “Lithographic Contact Elements”之 PCT 申請案 W〇00/3 3089所揭示者,此等專利及申請案全文係以提及 的方式倂入本文中。 方法之一當中,該探針與該墊接觸之後,對該探針施 加特定壓力,如此使得探針穿入形成該墊表面之材料,並 與形成該墊主體部分產生低電阻接觸,達成探測器與該墊 間之電性連接。以探針尖端接觸並穿入該墊時,轉移到探 針尖端之墊材料可能會污染該探針元件。所轉移的、污染物 可能包含原有的墊材料或該墊材料的氧化物。視該目舜胃j桑 作條件而定,也有可能該墊材料與探針尖端材料合金化( 熔融)。 -8- (3) (3)200302537 或者,被該探針尖端穿透的墊表面材料可能產生破片 (例如,金屬碎屑),此等破片有時於隨後去除。通常, 彈性或彈簧探針係用以在探測器與墊之間獲得穩固電性連 接’其係於該探針與墊接觸之後,以預定壓力對該探針施 加所達成。施壓之後,有些接觸技術需要該探針以些許X 軸方向以及選擇性以Y軸方向強力撞擊,其造成形成該墊 表面之材料部分(例如,金屬氧化物膜)被刮掉,因而產 生呈例如金屬「削片」形式之破片,該等削片可能具有氧 · 化物膜。此種橫跨該墊表面之移動亦可能產生形成該墊表 面之材料所造成的破片之「碎屑」(例如,金屬及/或氧 化物膜)。即使是非滑觸接點,亦可能於探測期間因材料 轉送及/或合金化,以及因該探針元件側邊黏附鬆散破片 粒子而被污染。 不過,外來破片不只局限於金屬削片及/或金屬氧化 物碎屑,亦可能包含諸如粉塵、聚合副產物或金屬氧化物 副產物等物質,其係伴隨著建構積體電路而在晶圓上進行 · 的各種方法所形成,或是可能會干擾該探針尖端與該晶粒 表面獲得適當電性連接,或是干擾探針本身與晶粒形成適 當定位的任何其他材料。已針對此等問題進行各種處置方 法,以期探針與墊之間達到符合需求之電性連接,此等處 置方法包含在晶粒測試循環期間淸潔探針尖端。 在一習用探針淸潔方法當中,使用磨損墊去除黏附於 探針尖端之外來材料。該磨損墊可由一種彈性底質材料與 磨鈾粒子之混合物所組成。或者,該磨損墊可由碳化鎢組 -9 - (4) (4)200302537 成。藉由重複將探針尖端推壓與拉開該墊之淸潔循環,刮 掉黏附於探針尖端之外來材料。該推壓與拉開淸潔循環包 含將磨損墊垂直地(例如,以z軸方向)移向該探針,然 後垂直離開該探針。 上述習用淸潔方法的缺點係,於推壓與拉開處理期間 ’底質材料部分(例如聚矽氧橡膠)及/或磨蝕粒子(例 如磨蝕顆粒)可能會自該墊掉落或形成碎屑,因而產生會 黏在該探針尖端之額外外來材料。另外,落在該磨損墊上 · 之外來物質(先前自探針去除者)後來可能會黏在淸潔中 之探針上。因此,需要額外淸潔步驟以適當地淸潔探針。 額外步驟可能包含對該探針吹送一種有機溶劑,然後 對該探針吹送乾燥空氣。基於許多因素,使用此等溶劑較 爲不利。例如,吹送有機溶劑很耗費時間,而且可能會弄 得髒亂或危險。另外,吹送乾燥空氣很費時。此外,吹送 溶劑與乾燥空氣需要特殊設備。亦已使用細小刷子淸潔探 針。 鲁 改善習用探針淸潔方法的其他嘗試包含在上述推壓與 拉開淸潔循環之後,使用一種覆蓋聚合物基板以去除外來 材料。更明確地說,將一凝膠墊定位在該探針下方,然後 使之與探針接觸,其方法與上述磨損墊之推壓與拉開方法 相似。因此,已鬆脫或是該磨損墊所產生的破片會黏在該 凝膠墊上,因而自該探針去除此等破片。此種淸潔方法的 缺點係,操作者必須在淸潔期間交換該磨損墊與凝膠墊。 由於此種方法妨礙完全自動化晶圓測試,明顯降低晶圓測 -10- (5) (5)200302537 試產出,此種方法並不佳。 因此,需要淸潔探針用之改良方法與裝置。 【發明內容】 本發明有關淸潔測§式探針之裝置與方法,該丨|fj試丨荣金十 係用於具有許多測試探針之類型的半導體測試機器,其+ S亥測試探針用以與半導體晶圓表面接觸,以測試晶圓上戶斤 形成的一或多個晶粒之測試探針。該欲淸潔之測試探針可 鲁 爲任何種類之探針,諸如鎢針、垂直探針、眼鏡蛇探針、 L·型探針、柱塞式探針、彈簧探針、在膜片上形成之接點 緩撞探針等等。 第一實施例當中,本發明之淸潔裝置包含一磨蝕基板 層與一膠黏性凝膠層,其位於該磨蝕基板層的磨蝕表面上 〇 本發明第二實施例有關製造該淸潔裝置之方法。 本發明第三實施例有關淸潔探針尖端之方法。 修 本發明第四實施例有關該淸潔裝置的膠黏性凝膠層。 本發明第五實施例有關製造該淸潔裝置之膠黏性凝膠 層的方法。 【實施方式】 內容表 I. 發明術語 II. 淸潔裝置 -11 - (6) (6)200302537 A ·磨蝕基板層 Β·膠黏性凝膠層/材料 1.以矽酮爲底的樹脂 2·交聯化合物 3.組份之定向 ΠΙ·製造該淸潔裝置之方法 IV·淸潔裝置探針尖端之方法 • I ·本發明術語 「探針尖端」一辭係指用以測試半導體裝置之探針元 件的末端部分。 「探針元件」一辭係指但不局限於鎢針、垂直探針、 眼鏡蛇探針、L型探針、柱塞式探針、彈簧探針以及在膜 片上形成之接點緩撞探針。 彈簧接點探針(亦稱爲「彈簧接點」)或「接點彈簧 」)係指但不局限於一家Delaware公司--FormFacto, 修US Patent 6,110,823 of "Resulting from Such a Method", US Patent 6, 2 5 5, 1 2 6 entitled "Lithographic C ntact E1 ements", and PCT Application "Lithographic Contact Elements" WO 00 As disclosed in / 3 3089, the full text of these patents and applications are incorporated herein by reference. In one of the methods, after the probe contacts the pad, a specific pressure is applied to the probe, so that the probe The needle penetrates the material forming the surface of the pad and makes a low-resistance contact with the main body portion of the pad to achieve the electrical connection between the detector and the pad. When the probe tip contacts and penetrates the pad, it is transferred to the probe The tip pad material may contaminate the probe element. The transferred and contaminated materials may include the original pad material or the oxide of the pad material. Depending on the operating conditions of the item, the pad material may also be Alloy (melt) with the probe tip material. -8- (3) (3) 200302537 Alternatively, the pad surface material penetrated by the probe tip may generate fragments (for example, metal debris) These fragments are sometimes removed later. Usually, elastic or spring probes are used to obtain a stable electrical connection between the probe and the pad. After the pressure is applied, some contact technologies require the probe to strike strongly with some X-axis direction and optionally in the Y-axis direction, which causes the part of the material forming the surface of the pad (for example, a metal oxide film) to be scratched This can result in fragments in the form of, for example, metal "chips," which may have an oxide film. Such movement across the pad surface may also result in "chips" (e.g., metal and / or oxide films) of fragments caused by the material forming the pad surface. Even non-slip contacts may be contaminated during material detection due to material transfer and / or alloying, and loose fragment particles adhering to the side of the probe element. However, foreign fragments are not limited to metal shavings and / or metal oxide debris, but may also contain substances such as dust, polymerization byproducts, or metal oxide byproducts, which are on the wafer along with the construction of integrated circuits Formed by various methods, or any other material that may interfere with obtaining the proper electrical connection between the probe tip and the surface of the die, or interfere with the proper positioning of the probe with the die. Various approaches have been taken to address these issues with a view to achieving a desired electrical connection between the probe and the pad. These approaches include cleaning the probe tip during the die test cycle. In a conventional probe cleaning method, a wear pad is used to remove foreign materials that stick to the probe tip. The wear pad may consist of a mixture of an elastic substrate material and ground uranium particles. Alternatively, the wear pad may be made of tungsten carbide group -9-(4) (4) 200302537. By repeating the cleaning cycle of pushing and pulling the probe tip away from the pad, scrape off the foreign material adhering to the probe tip. The push and pull cycle includes moving the wear pad vertically (e.g., in the z-axis direction) toward the probe and then leaving the probe vertically. The disadvantage of the above-mentioned conventional cleaning method is that the substrate material portion (such as silicone) and / or abrasive particles (such as abrasive particles) may fall from the pad or form debris during the pressing and pulling process. This creates additional foreign material that will stick to the probe tip. In addition, foreign materials (previously removed from the probe) that fell on the wear pad may later stick to the probe in the clean. Therefore, additional cleaning steps are required to properly clean the probe. Additional steps may include blowing an organic solvent over the probe and then blowing dry air over the probe. The use of these solvents is disadvantageous for many reasons. For example, blowing organic solvents is time consuming and can be messy or dangerous. In addition, blowing dry air is time consuming. In addition, blowing solvent and dry air requires special equipment. The probe has also been cleaned with a small brush. Lu's other attempts to improve the conventional probe cleaning method include using a cover polymer substrate to remove foreign materials after the aforementioned push and pull cleaning cycles. More specifically, positioning a gel pad under the probe and then bringing it into contact with the probe is similar to the method of pushing and pulling the wear pad described above. As a result, the fragments that have come loose or the abrasion pad will stick to the gel pad, and these fragments are removed from the probe. The disadvantage of this cleaning method is that the operator must exchange the wear pad and gel pad during cleaning. Because this method hinders fully automated wafer testing and significantly reduces wafer testing -10- (5) (5) 200302537 trial output, this method is not good. Therefore, there is a need for improved methods and devices for cleaning probes. [Summary of the Invention] The present invention relates to a device and a method for a 式 -type probe. The 丨 | fj test 丨 Rongjin ten series is used for semiconductor test machines of many types with test probes, and its + Shai test probe A test probe used to contact the surface of a semiconductor wafer to test one or more dies formed on the wafer. The clean test probe can be any kind of probe, such as tungsten needle, vertical probe, cobra probe, L · type probe, plunger probe, spring probe, formed on the diaphragm. Contact bump probe and so on. In the first embodiment, the cleaning device of the present invention includes an abrasive substrate layer and an adhesive gel layer, which are located on the abrasive surface of the abrasive substrate layer. method. The third embodiment of the present invention relates to a method for cleaning the tip of a probe. The fourth embodiment of the present invention relates to an adhesive gel layer of the cleaning device. The fifth embodiment of the present invention relates to a method for manufacturing an adhesive gel layer of the cleaning device. [Embodiment] Table of contents I. Inventive term II. Cleaner device-11-(6) (6) 200302537 A · Abrasive substrate layer B · Adhesive gel layer / material 1. Silicone-based resin 2 Cross-linking compound 3. Orientation of components II. Method of manufacturing the cleaning device IV. Method of cleaning the probe tip of the cleaning device. I. The term "probe tip" used in the present invention refers to the test of semiconductor devices. The tip part of the probe element. The term `` probe element '' refers to, but is not limited to, tungsten needles, vertical probes, cobra probes, L-shaped probes, plunger probes, spring probes, and contact bumps formed on the diaphragm. needle. Spring contact probe (also known as "spring contact") or "contact spring") means but is not limited to a Delaware company-FormFacto, repair

Inc.目前與未來所供應之任何彈簧接點。目前習知之任何 種類彈簧接點均可用於本發明。可用於本發明之彈簧接點 實例係引線搭接、多層平版印刷與一體成型彈簧。 「基板」一辭係承載材料。 「磨蝕基板」一辭係具有磨蝕表面之承載材料。 「磨蝕表面」一辭係一種磨蝕基板之非平滑表面。 「異質磨蝕基板」係指由至少兩種材料所製得之磨蝕 基板層,其中該材料之一形成基板層,在其上形成至少一 -12- (7) (7)200302537 種具有磨蝕表面之其他材料。構成該基板層與具有磨蝕表 面層之材料是不同材料。 II.淸潔裝置 圖1 A描述根據本發明第一實施樣態之淸潔裝置,其 包含(i) 一種選擇性保護層(130),其係以虛線表示; (ii )位於該保護層上面之磨鈾基板層(Π0 );以及(iii )位於該磨蝕基板層(1 1 〇 )上面之膠黏性凝膠層。表面 鲁 磨蝕物或突起(1 20 )係由兩層之間的鋸齒圖案表示。不 過’所表不之鋸閱圖案在各方面均非用以限制該磨鈾表面 的構造。 該淸潔裝置之構造包含選擇性保護基板層(1 30 )的 情況下’當該探針尖端穿透該磨蝕基板層(n 〇 )時,該 保護基板層會保護該探針尖端的結構完整性。因此,穿透 該磨蝕基板層(Π 0 )而非接觸一硬質表面(例如,操作 ί采作期間,可能放置本發明淸潔裝置的表面)--其可能 馨 會ί貝壞該探針尖端--時,該探針尖端接觸到較柔軟、較 柔順材料,其不會損害探針尖端之物理完整性。就此實施 例而頁’該保護基板層之適用材料係但不局限於聚矽氧爲 底質橡膠材料。 圖1Β描述一種包含異質磨蝕基板層(140)之淸潔裝 置’其具有:(i)基板層(141),其上層壓有(ii)磨 触層(142),其材料與基板層(141)不同,而且具有表 面磨蝕物(12〇)。層壓在該磨蝕基板層(14〇)上的是膠 -13- (8) (8)200302537 黏性凝膠層(1 〇〇 )。此種構造亦選擇性包含一層上述之 保護基板層(130)。 圖1C描述包含圖1A或1B之淸潔裝置(105)的捲 線筒(1 5 0 ),其藉由捲收心軸或滾軸(1 7 〇 )拉過一壓板 (1 60 )。該壓板(1 60 )係可承受壓力的板(即,承載表 面),其使得該探針尖端(180)與捲繞的淸潔裝置(105 )產生反應。該包含探針尖端(185 )之探針卡(180 )位 於該壓板上方。探針卡(1 80 )向下移動會將探針尖端( · 1 85 )推穿膠黏性凝膠層(1 00 ),如此探針尖端(1 85 ) 與膠黏性凝膠層(100)下面的磨鈾基板層(110,140 )之 磨蝕表面接觸。滾軸(190 )係「定位滾軸」,其有助於 使圖1A或1B之淸潔裝置在壓板(160)上保持適當定向 。圖1 C所示之構造用意並非限制本發明實施樣態之說明 。本發明此實施樣態之滾軸位置並不是固定的,其可依熟 悉之技術人士實際需要而調整或是改進,以使該淸潔裝置 的效用最大。 0 根據圖1 C之備擇構造,壓板(1 6 0 )具有磨鈾表面, 而捲線筒(1 50 )可包含一具有膠黏性凝膠材料(1 〇〇 )之 淸潔:置(1 0 5 ) ’ 5亥膠黏性凝膠材料係承載於燒性膜之 上。該膠黏性凝膠材料(與該承載膜)係移動通過該壓板 (1 60 )之磨蝕表面,使該膠黏性凝膠層(1 00 )的未使用 區域露出。將該探針卡上的探針尖端壓穿該膠黏性凝膠材 料(與承載膜),因而使其與該壓板(1 6 0 )的磨蝕表面 接觸,以促進在其上之淸潔移動。 -14- (9)200302537 在另一備 有同質或異質 選擇性承載於 有膠黏性凝膠 係一載體,而 本發明此 性凝膠層的循 探針尖纟而去除 ,將未使用之 該膠黏性凝膠 膠黏性凝膠層 並將捲收心軸 A ·磨蝕基板層 本發明之 掉之破片種類 到不會損壞探 使該探針尖端 固定間距下, 一材料(1 1 0 : 與140 )(即 相同之材料製 屬合金、複合 雖然過渡 擇實施例中,該捲線筒(1 5 0 )可包含一具 磨蝕基板(1 10,140 )之淸潔,該磨蝕基板 一保護基板(130 )上。因此,此種構造沒 層(100 )。此種構造當中,該壓板(160 ) 且不具磨蝕表面。 一實施樣態中,探針尖端插入與移出該膠黏 環持續一段時間,會降低該膠黏性凝膠層自 破片之功效。因此,轉動該捲收心軸或滾軸 膠黏性凝膠層放置在該壓板(1 60 )上,使 層(1 00 )之淸潔功效最大。當捲線筒上之 用盡之後,添加新的膠黏性凝膠層捲線筒, 上已使用過的膠黏性凝膠層丟棄。 磨蝕基板層通常係硬質或比欲自探針尖端淸 更硬的任何材料,而且通常但並不一定柔軟 針尖端本身。某些實例中,可選用該材料, 產生受控制或受限制損壞,此種方式適用於 探針尖端上需要全新表面之情況。其可爲單 )(即,同質)或倂用二種以上材料(1 10 ,異質)。該磨蝕基板層亦可由與探針尖端 得。通常,該磨蝕基板層可由任何金屬、金 化合物、天然材料或金屬有機化合物製得。 金屬系金屬均可用以製造該磨蝕基板,但是 -15- (10) (10)200302537 較佳過渡金屬包含但不局限於:銅、鎳、鈀、鎢、鍊與金古 〇 適於作爲磨蝕基板之材料包含但不局限於上述金_ <壬 一者之合金,其可包含磷、氮、硼及/或相似材料。適用 金屬合金之特定實例包含但不局限於:鈀/銅、鈦/鎢與銷/ 鉻。 作爲磨蝕基板之適用複合(多元)化合物包含但不局 限於:碳化鎢、碳化矽、氮化矽、二氧化矽、氮化銘、氧 化鋁、氧化鉻或氮化鈦。 作爲磨蝕基板之適用天然材料包含但不局限於:砂石 、氧化鋁、金剛石或類金剛石碳。 該磨鈾基板層之表面特徵係該基板材料之表面上具有 一系列無序、半無序或有序磨鈾物。此等磨蝕物可由以下 步驟製備:使該基板表面粗糙化,鍍層該基板表面、蝕刻 、壓紋、切入該基板表面,或是使用模具製備,其中該模 的內表面其中一面具有磨蝕圖案。可以倂用熟悉之技術人 士所習知的其他製備磨蝕物適用方法與本發明此一實施樣 態。本發明一實例中,使用至少兩種熟悉之技術人士所習 知在基板表面上製造磨蝕物的方法製備該磨蝕物。 該磨蝕物的形狀可能有界定構造,諸如例如由模具、 印模、蝕刻或可以產生突起之均勻重複圖案的任何其他方 法所製得的幾何形狀。該磨蝕物通常分級與成形以提供磨 蝕特徵。通常,該磨蝕物的尺寸小於探針尖端的寬度。該 磨蝕物小到足以橫過探針尖端的寬度爲佳。因此,磨蝕物 -16- (11) (11)200302537 間的距離小到足以調整此種排列。 圖2描述磨蝕物(120 )相對於探針尖端(200 )寬度 之橫剖面尺寸關係。圖2亦表示磨蝕物(120 )具有磨蝕 基板層(1 1 0 )上的諸多可能構造之一。圖2所描述的磨 鈾物具有均勻重複圖案,而且比探針尖端的尺寸小。本發 明一實例中’圖2所表示的磨蝕物(1 20 )寬度約2 μιη, 磨鈾物間之距離約2μηι。探針尖端(2〇〇 )的寬度通常約 1 0μιη。此等尺寸是舉例說明,而非在各方面限制本發明 鲁 〇 Η亥磨蝕物除了具有幾何均勻重複圖案的之外,其亦可 具有零碎性質,即,不具有任何幾何界定形狀。亦已知此 等零碎磨鈾物爲樹枝狀。可由上述適於製造磨蝕基板的任 一種材料’以熟悉之技術人士習知的方法製得樹枝狀磨蝕 物。亦可藉由在熱基板材料表面上濺鍍一層諸如金屬、合 金、複η化合物或天然材料等之膜,製備該磨蝕基板層之 磨蝕表面印刷式樣。若該基板材料的表面溫度高於欲沈積 鲁 之材料的熔融溫度,所形成之沈積物冷卻之後會具有粗糙 表面印刷式樣。由於以此種方式製備之磨蝕基板層包含不 同材料組份,其係異質。以此種方式製備之粗糙表面具有 適用於本發明之磨蝕表面特徵。可濺鍍於熱基板上的材料 實例包含但不局限於鋁、矽、碳化矽以及氮化鋁。 '&鍍材料係柔軟金屬時,可於隨後沈積一種較硬材 料保留該表面印刷式樣的粗糙度,此等較硬材料諸如例如 .碳化鎢、氮化鈦、金剛石或類金剛石碳。 -17- (12) (12)200302537 另一種製得該磨蝕表面特徵之方法係在該基板表面上 沈彳貝上述材料任一者之粉末、粒子、顆粒或結晶形式。所 塗覆材料之粉末、粒子或顆粒通常係與一種基質材料混合 物’然後塗覆於該基板表面上。亦可在該基板表面上生長 所#t材料之結晶,製備該基板的磨蝕表面。 製造磨蝕基板層之磨蝕表面特徵的另外方法包括但不 局限於:光蝕刻、使用放電機(EDM )、雷射蝕刻、電鍍 、噴砂、化學蝕刻、模製、凸雕、離子銳、電解沈積與燒 鲁 在基板上製得磨蝕表面之方法的上述實例並非用以限 制本發明。熟悉本技術者將明白,在基板上製造磨蝕表面 的任何方法均適用於本發明。 B .膠黏性凝膠層/材料 本發明之膠黏性凝膠層係探針尖端插入的第一淸潔層 。該淸潔層具有自動復原性(即,移開探針尖端時,因探 鲁 針尖端所形成的孔洞會封密),而且當該探針尖端插入及 /或自該膠黏性凝膠層取出時,該膠黏性凝膠材料不會黏 附在S亥探針尖端上。 §亥膠黏性凝膠層包含以下物質之混合物: (a )具有式I之聚矽氧樹脂:Inc. currently works with any spring contacts supplied in the future. Any kind of spring contact conventionally known can be used in the present invention. Examples of spring contacts that can be used in the present invention are lead bonding, multilayer lithography, and integrally formed springs. The term "substrate" refers to the carrier material. The term "abrasive substrate" refers to a carrier material having an abrasive surface. The term "abrasive surface" refers to a non-smooth surface of an abraded substrate. `` Heterogeneous abrasive substrate '' refers to an abrasive substrate layer made of at least two materials, one of which forms a substrate layer on which at least one -12- (7) (7) 200302537 has an abrasive surface other materials. The material constituting the substrate layer and the material having the abrasive surface layer are different materials. II. Cleaning device FIG. 1A depicts a cleaning device according to a first embodiment of the present invention, which includes (i) a selective protective layer (130), which is indicated by a dotted line; (ii) located on the protective layer A ground uranium substrate layer (Π0); and (iii) an adhesive gel layer located on the abraded substrate layer (110). The surface abrasions or protrusions (120) are represented by a zigzag pattern between the two layers. However, the sawing pattern shown by 'is not used in any way to limit the structure of the ground uranium surface. In the case where the structure of the cleaning device includes a selective protective substrate layer (130), when the probe tip penetrates the abrasive substrate layer (n), the protective substrate layer will protect the structural integrity of the probe tip. Sex. Therefore, penetrating the abrasive substrate layer (Π 0) rather than touching a hard surface (for example, during operation, the surface of the cleaning device of the present invention may be placed)-it may damage the probe tip. --- When the probe tip comes into contact with a softer, more compliant material, it will not damage the physical integrity of the probe tip. According to this embodiment, a suitable material for the protective substrate layer is, but is not limited to, polysiloxane as a base rubber material. FIG. 1B depicts a cleaning device including a heterogeneous abrasive substrate layer (140), which has: (i) a substrate layer (141) on which (ii) a friction layer (142) is laminated, and a material and a substrate layer (141) ) Are different and have surface abrasions (120). Laminated on the abrasive substrate layer (14) is a glue -13- (8) (8) 200302537 viscous gel layer (100). This structure also optionally includes a protective substrate layer (130) as described above. Fig. 1C depicts a spool (150) containing the cleaning device (105) of Fig. 1A or 1B, which is pulled through a pressure plate (1 60) by a winding mandrel or roller (17). The pressure plate (1 60) is a pressure-resistant plate (i.e., a bearing surface), which causes the probe tip (180) to react with the rolled cleaning device (105). The probe card (180) containing the probe tip (185) is located above the platen. Moving the probe card (1 80) downward will push the probe tip (1 85) through the adhesive gel layer (1 00), so that the probe tip (1 85) and the adhesive gel layer (100 ) The abrasive surface of the underlying ground uranium substrate layer (110, 140) is in contact. The roller (190) is a "positioning roller" that helps to maintain the proper orientation of the cleaning device of Fig. 1A or 1B on the platen (160). The structure shown in FIG. 1C is not intended to limit the description of the embodiment of the present invention. The position of the roller in this embodiment of the present invention is not fixed, and it can be adjusted or improved according to the actual needs of a skilled person to maximize the effectiveness of the cleaning device. 0 According to the alternative structure of FIG. 1C, the pressure plate (160) has a ground uranium surface, and the reel (150) may include an adhesive gel material (100): 0 5) '5 Hai adhesive gel material is carried on a fireable film. The adhesive gel material (and the carrier film) moves through the abraded surface of the pressure plate (1 60), exposing the unused area of the adhesive gel layer (100). The probe tip on the probe card is pressed through the adhesive gel material (and the carrier film), so that it is brought into contact with the abrasive surface of the pressure plate (160) to promote clean movement thereon . -14- (9) 200302537 In another, a homogeneous or heterogeneous selective carrier is provided on a carrier with an adhesive gel system, and the gel layer of the present invention is removed by the tip of a probe, and unused The adhesive gel layer and the reeling mandrel A · Abrasion of the substrate layer The types of fragments of the present invention will not damage the probe tip under a fixed distance, a material (1 1 0 : Same as 140) (that is, the same material is made of alloy and compound. Although in the transitional alternative embodiment, the reel (150) may include an abrasive substrate (1 10,140), and the abrasive substrate is a protective substrate ( 130). Therefore, this structure has no layer (100). In this structure, the pressure plate (160) does not have an abrasive surface. In one embodiment, the probe tip is inserted into and removed from the adhesive ring for a period of time, Will reduce the effectiveness of the self-fragmentation of the adhesive gel layer. Therefore, the roll mandrel or roller adhesive gel layer is rotated and placed on the pressure plate (1 60) to make the layer (100) clean The most effective. When the reel is used up, add a new adhesive gel layer Reel, discarding the used adhesive gel layer. The abrasive substrate layer is usually hard or any material that is harder than the probe tip, and usually, but not necessarily, the needle tip itself. Some examples In this case, you can use this material to produce controlled or restricted damage. This method is suitable for situations where a new surface is required on the probe tip. It can be single) (that is, homogeneous) or two or more materials (1 10 ,heterogeneous). The abrasive substrate layer can also be obtained from the probe tip. Generally, the abrasive substrate layer can be made of any metal, gold compound, natural material, or metal organic compound. Any metal-based metal can be used to make the abrasive substrate, but -15- (10) (10) 200302537. Preferred transition metals include, but are not limited to: copper, nickel, palladium, tungsten, chain, and gold. Suitable as abrasive substrates. The materials include, but are not limited to, the alloys of the above-mentioned gold, which may include phosphorus, nitrogen, boron, and / or the like. Specific examples of suitable metal alloys include, but are not limited to: palladium / copper, titanium / tungsten and pins / chrome. Suitable composite (multiple) compounds for abrasive substrates include, but are not limited to: tungsten carbide, silicon carbide, silicon nitride, silicon dioxide, nitride nitride, aluminum oxide, chromium oxide, or titanium nitride. Suitable natural materials for abrasive substrates include, but are not limited to, gravel, alumina, diamond, or diamond-like carbon. The surface feature of the ground uranium substrate layer is a series of disordered, semi-disordered, or ordered ground uranium on the surface of the substrate material. These abrasives can be prepared by roughening the surface of the substrate, plating the surface of the substrate, etching, embossing, cutting into the surface of the substrate, or using a mold, wherein one side of the inner surface of the mold has an abrasive pattern. Other suitable methods for preparing abrasives known to those skilled in the art and the embodiment of the present invention can be used. In one example of the present invention, at least two methods known to those skilled in the art for producing abrasives on a substrate surface are used to prepare the abrasives. The shape of the abrasive may have a defined configuration, such as, for example, a geometry made by a mold, stamp, etch, or any other method that can produce a uniform repeating pattern of protrusions. The abrasive is typically graded and shaped to provide abrasive characteristics. Generally, the size of the abrasive is smaller than the width of the probe tip. The abrasion is preferably small enough to traverse the width of the probe tip. Therefore, the distance between the abrasives -16- (11) (11) 200302537 is small enough to adjust this arrangement. Figure 2 depicts the cross-sectional size relationship of the abrasive (120) with respect to the width of the probe tip (200). Figure 2 also shows that the abrasive material (120) has one of many possible structures on the abrasive substrate layer (110). The ground uranium depicted in Figure 2 has a uniform repeating pattern and is smaller than the size of the probe tip. In an example of the present invention, the width of the abrasive material (1 20) shown in FIG. 2 is about 2 μm, and the distance between the ground uranium materials is about 2 μm. The width of the probe tip (200) is usually about 10 μm. These dimensions are illustrative, rather than limiting the invention in all respects. In addition to having a geometrically uniform repeating pattern, they can also have fragmentary properties, that is, they do not have any geometrically defined shapes. It is also known that such fragmentary ground uranium is dendritic. The dendritic abrasion product can be prepared from any of the above-mentioned materials suitable for manufacturing the abraded substrate 'in a method known to those skilled in the art. It is also possible to prepare an abrasive surface printing pattern of the abrasive substrate layer by sputtering a film such as a metal, an alloy, a compound compound, or a natural material on the surface of the thermal substrate material. If the surface temperature of the substrate material is higher than the melting temperature of the material to be deposited, the formed deposit will have a rough surface printing pattern after cooling. Since the abrasive substrate layer prepared in this way contains different material components, it is heterogeneous. The roughened surface prepared in this way has abraded surface characteristics suitable for use in the present invention. Examples of materials that can be sputtered onto thermal substrates include, but are not limited to, aluminum, silicon, silicon carbide, and aluminum nitride. '& When the plating material is a soft metal, a harder material can be subsequently deposited to retain the roughness of the surface print pattern, such as, for example, tungsten carbide, titanium nitride, diamond, or diamond-like carbon. -17- (12) (12) 200302537 Another method of making the abraded surface feature is to deposit on the surface of the substrate a powder, particle, granule or crystalline form of any of the above materials. The powder, particles or granules of the applied material are usually mixed with a matrix material 'and then applied to the surface of the substrate. It is also possible to grow a crystal of the #t material on the surface of the substrate to prepare an abrasive surface of the substrate. Other methods of manufacturing abrasive surface features of abrasive substrate layers include, but are not limited to: photolithography, use of discharge machine (EDM), laser etching, electroplating, sandblasting, chemical etching, molding, relief, ion sharpening, electrolytic deposition and The above examples of the method of ablating the abrasive surface on the substrate are not intended to limit the present invention. Those skilled in the art will appreciate that any method of making an abrasive surface on a substrate is applicable to the present invention. B. Adhesive gel layer / material The adhesive gel layer of the present invention is the first cleaning layer inserted by the probe tip. The cleaning layer is self-healing (that is, the hole formed by the probe tip is sealed when the probe tip is removed), and when the probe tip is inserted into and / or from the adhesive gel layer When taken out, the adhesive gel material will not stick to the tip of the probe. § The adhesive gel layer contains a mixture of: (a) a silicone resin having Formula I:

-18- (13) (13)200302537 其中 R!、R2、R3、114與R5各選自氫Cu烷基、C!.6鹵代烷 基、乙烯基或Cu丙烯醯氧烷基,而且R!、R2、R3、R4與 R 5中至少一者係乙烯基; D 係選自-〇-、-S-、- ( CH2 ) rCH2-、- ( CH2 ) rCH2〇-與- 〇(CH2) rCH2-之二價鍵,其中ι·少自0-10之整數;以 及 η與m各爲自約0至1 000之整數,其中m與η的總 和不小於約10 ;以及 (b ) —種交聯化合物,其係選自: (i )具有式11之化合物:-18- (13) (13) 200302537 where R !, R2, R3, 114 and R5 are each selected from hydrogen Cu alkyl, C! .6 haloalkyl, vinyl or Cu propylene alkoxyalkyl, and R !, At least one of R2, R3, R4 and R5 is a vinyl group; D is selected from the group consisting of -〇-, -S-,-(CH2) rCH2-,-(CH2) rCH2〇-, and -〇 (CH2) rCH2- A bivalent bond, where ι · single is an integer from 0-10; and η and m are each an integer from about 0 to 1,000, where the sum of m and η is not less than about 10; and (b) —a kind of cross-linking A compound selected from: (i) a compound having formula 11:

其中,r,,、r2,、r3,、r4,、r5,、m’與η’各選自界定上述R! 、R2、R3、R4、R5、m與η之群組,但其先決條件是不存 在乙烯基;或者 (ii )具有式III之化合物:Among them, r ,,, r2 ,, r3 ,, r4 ,, r5 ,, m 'and η' are each selected from the group defining R !, R2, R3, R4, R5, m and η, but their prerequisites are Is the absence of a vinyl group; or (ii) a compound of formula III:

其中: R6、R7、R8、R9、Ri。與 Rh 各選自:氫、Cm。烷基、 Cl -20鹵代烷基、苯基或Cm 〇烷基苯基; -19- (14) (14)200302537 p與q各爲自0至800之整數; 丁係選自單鍵、-(CH2) rCH2-、-(CH2) rCH2〇-或Among them: R6, R7, R8, R9, Ri. And Rh are each selected from: hydrogen, Cm. Alkyl, Cl-20 haloalkyl, phenyl, or Cm0 alkylphenyl; -19- (14) (14) 200302537 p and q are each an integer from 0 to 800; D is selected from a single bond,-( CH2) rCH2-,-(CH2) rCH2〇-or

RR

II

Si-〇Si-〇

其中,t係自0-10之整數,R係選自Cl.2Q烷基、Ci.2。鹵代 院基、苯基或CV1。院基苯基;而s係自〇至800之整數; 以及 (c ) 一種觸媒; 另外,其中: 由式I之m與η値總和所界定之以矽酮爲底的樹脂的 鏈長恆大於由式II之nV與η ’値總和或式πI之p、q與s 値總和所界定之交聯化合物的鏈長。 或者,該膠黏性凝膠層亦可界定爲一種包含以下物質 之混合物的組成物: (a)黏度自約2000至10, 〇〇〇厘泊(cps)之以砂酮 爲底的樹脂; (b )黏度自約2至1 0 0 0 c p s之交聯化合物;以及 (c ) 一種觸媒。 該以矽酮爲底的樹脂鏈長(即,大小)通常由式I之 - 20- (15) (15)200302537 m與η値總和界定。同樣地,交聯化合物之大小係由式π 之m’與η’値總和界定,或由式ΠΙ之p、q與s値總和所 界定。 通常’爲了製得該膠黏性凝膠層之自動復原性與不黏 附於探針尖端的特徵,該以矽酮爲底的樹脂之鏈長恆大於 該交聯化合物之鏈長。符合此一條件之以矽酮爲底的樹脂 長度對該交聯化合物長度,而且提供該膠黏性凝膠層自動 復原性與不黏附於探針尖端的特徵之任何比率均在本發明 鲁 範圍內。以矽酮爲底的樹脂長度對交聯化合物長度的代表 性非限制比率約1 0 : 1。其他比率亦適用,惟其先決條件係 所形成混合物會產生具有上述特徵之膠黏性凝膠層。亦可 藉由混合該以矽酮爲底的樹脂與具有上述代表性黏度的交 聯化合物獲得此等特徵。 1、以矽酮爲底的樹脂 式I之化合物係一種長鏈聚矽氧聚合樹脂。適用之長 修 鏈聚矽氧聚合樹脂在室溫下黏度必須自約2 0 0 0至1 〇,〇 〇 〇 cps,而且玻璃轉化溫度低於約負65 °C。因此,選擇n與 m値使形成之化合物符合該長鏈聚矽氧聚合樹脂之所需黏 度。通常,就長鏈聚矽氧聚合樹脂而言,η與m値的總和 不小於約1 0。 該以砂酬爲底的樹脂亦相當純淨,其低分子量污染物 不超過約1 %,而且除氣値小於約0 · 5 %。此等純度水準確 使自該凝膠移開探針時,不會有污染物殘留在該探針尖端 -21 - (16) (16)200302537 上。 本發明可使用對應於上述需求之式I任何以矽酮爲底 的樹脂。適用之聚矽氧爲底質材料實例包含但不局限於 Dow Corning 93-500、GE RTV567 (General Electric)與 PS444 及 PS802 ( United Chemical Technologies)。 2、交聯化合物 該交聯化合物係經單體烷基取代之羥矽氧烷化 · 合物,或短至中鏈長之羥矽氧烷寡聚樹脂。適用之短至中 鏈長之羥矽氧烷寡聚樹脂的室溫黏度必須自約2至1 0 0 0 cps。因此,就式II而言,根據該交聯化合物所需黏度範 圍選擇P、q與s値。通常,就短至中鏈長寡聚樹脂而言 ,P、q與s値總和不大於約8 0 0。適用之交聯化合物可選 自但不局限於 PS 123 與 PS 542 ( United Chemical Technologies )、甲基氫-二甲基矽氧烷、羥矽氧烷之聚合 物及/或共聚物。 φ 該以矽酮爲底的樹脂、交聯化合物與觸媒的反應形成 膠黏性凝膠層之所需凝膠特徵。此等特徵包括自動復原性 、膠黏性、黏著力、僵硬度、純度與操作溫度範圍廣。該 混合物的各種組份可分別添加於形成該凝膠的反應混合物 當中’或者該觸媒可在與以矽酮爲底的樹脂聚合之前,先 與交聯化合物結合。 該觸媒可爲熟悉本技術者所習知用以固化樹脂、聚合 物等之任何觸媒。適用於本發明之固化觸媒包含但不局限 - 22- (17) (17)200302537 於含鉑觸媒。 與該聚矽氧爲底質材料混合之交聯化合物數量反應控 制所形成膠黏性凝膠層的所需特徵。因此,可以藉由控制 該交聯化合物之數量訂製一或多種上述凝膠特徵。根據本 發明實例,於該聚矽氧爲底質材料中添加自約2·〇至5.〇 重量%交聯劑,以達到所需之凝膠特徵。於該聚矽氧爲底 質材料中添加自約2 · 0至約3 · 〇重量%之交聯劑爲佳。 若添加於該以矽酮爲底的樹脂中之交聯化合物數量少 於約2.0重量%,當探針尖端進出該膠黏性凝膠層時,該 凝膠可能轉移到該探針尖端上。此外,若添加於該以矽酮 爲底的樹脂的交聯劑數量大於約5 · 0重量%,該凝膠通常 太硬而無法淸潔該探針尖端。 該膠黏性凝膠層的自動復原性質通常界定爲探針自該 凝膠取出時,該凝膠自動封閉探針尖端所形成之孔洞的能 力。通常,當該探針插入膠黏性凝膠層時,該凝膠材料會 被排除,因而產生孔洞。移開該探針時,被排除之凝膠流 回該孔洞內。該孔洞在數秒內封閉爲佳,如此流回孔洞的 凝膠塡滿該孔洞,其厚度不小於原來凝膠厚度的5 0 %。 使用90度foil peel試驗測定該凝膠層之黏著力。爲 了進行此試驗,將一片鋁箔(Γ X 3”)層壓在該凝膠上 ,其未拋光面與該凝膠接觸。將該箔貼附於一個夾板,並 增加該夾板的法碼,使增加法碼的夾板以90度角自該凝 膠剝下該箔。將法碼添加於該夾板,直到剝離速率達到2 英吋/分鐘爲止。該速率下所記錄的總法碼係該凝膠黏著 -23- (18) (18)200302537 力値。本發明膠黏性凝膠材料的適用黏著力値在約〇. 1 〇 至100 g/英吋範圍內。 該凝膠層的純度係由該固化凝膠產物之數量除氣所界 定。適用於本發明之固化膠黏性凝膠層的除氣百分比必須 低於該凝膠總質量的0.5重量%,其係根據 American Society for Testing of Materials ( ASTM)方法 E595 所測 定。 該膠黏性凝膠層的操作溫度範圍自約負40°C至1 5(TC 。在此溫度範圍內,膠黏性凝膠層的上述特徵之變化必須 很少或無明顯變化。 該膠黏性凝膠層的厚度通常略小於欲淸潔之探針尖端 之表面或範圍的對應長度。因此此係該探針尖端可以穿透 膠黏性凝膠層,並與下方之磨蝕基板層接觸之情況。通常 ,欲淸潔之探針尖端長度自約1至250 μηι。因此,該膠 黏性凝膠層的厚度自約小於1 μηι至約200 μΐΏ。 3、組份之定向 根據本發明第二實施樣態,該淸潔裝置係將膠黏性凝 膠層(1 〇〇 )貼附於同質磨鈾基板(1丨〇 )之磨蝕表面或異 質磨蝕基板(1 40 )的磨蝕表面層所製備。可藉由將預形 成的凝膠層轉移到該磨蝕基板表面,或是在該磨蝕基板層 的磨蝕表面上直接塗覆該以矽酮爲底的樹脂/交聯劑/觸媒 混合物,在該磨鈾基板的表面上形成凝膠層,將該膠黏性 凝膠層貼附於磨蝕基板層(1 1 0,1 40 )上。 (19) (19)200302537 通常,本發明淸潔裝置的空間構造是平面,而且可以 進一步描述爲磨蝕基板層(110,140 )上面具有膠黏性凝 膠層(100 )之「墊」’如圖1A與1B所示。 本發明另一實例中,該墊亦可構成具有膠黏性凝膠層 與磨蝕基板層之交錯區。圖3顯示本發明之淸潔裝置墊的 立體圖,其中該墊具有膠黏性凝膠材料區(1 00 ),其係 由磨蝕基板層(1 1 〇 )之露出表面磨蝕物(1 20 )區隔開。 圖3所述之磨蝕基板層(11 0 )係同質磨蝕基板層(1 1 〇 ) 。不過,亦可使用圖1B所示之異質磨蝕基板層(140)製 備此種構造。可以選擇性地將同質與異質構造二者層壓在 保護基板(1 30 )上,如圖3虛線所示。 此外,如圖3所示,該墊的磨鈾表面係槽狀圖案,其 中此等自該墊前方排至後方。此種圖案僅爲代表性構造。 該槽狀磨蝕物亦可自該墊一側排到另一側(即,自左至右 )。淸潔此構造期間,順著該槽的排列方向在該區淸潔墊 中移動探針尖端。如此,在該墊磨蝕表面區中移動的探針 尖端通常是以單一方向移動。 或者’就圖3所示構造之淸潔墊(或圖1A或1B)而 言,該磨蝕基板層(1 1 〇,1 40 )的磨蝕表面特性亦可選自 隆起、柱狀、脊形或者由沈積粉末、粒子、顆粒或結晶所 形成的粗糙度。本發明此實施樣態中,該探針尖端在磨蝕 表面上的移動是多向移動。通常,可由不會將探針尖端移 動局限成單一方向之磨蝕表面特徵獲得多向移動。此種觀 念中’ 「不局限探針尖端移動」的句意係指由熟悉本技術 -25- (20) (20)200302537 者所認定之可能損壞探針尖端的任何移動。。 當該磨蝕基板層(110, WO)之表面磨蝕物係例如隆 起、柱狀及/或脊形時,若該磨蝕表面具有與探針尖端相 同硬度’該表面磨蝕物的頂點及/或邊緣構成銳利形狀爲 佳。反之’若該磨蝕基板之表面磨蝕物的硬度大於探針尖 端硬度’該表面磨蝕物的頂點及/或邊緣構成圓弧形狀爲 佳。此等構造提高淸潔效率,亦可保護探針尖端,避免在 淸潔期間受損。 Φ 圖4描述本發明淸潔裝置的另一實例,其中將一種彈 性體爲底質材料(4 1 0 )層壓在一基板層(1 4 1 )上,其 中磨飽粒子(420 )分散並承載在該彈性體爲底質材料( 4 1 0 )上。基板層(丨4丨)可爲前述討論之磨蝕基板層( 110,140)的任何材料。將膠黏性凝膠層(ι〇〇)層壓在該 彈性體爲底質材料(4丨〇 )的上表面。 彈丨生體爲底質材料(4 1 〇 )可爲具有承載磨蝕粒子能 力的任何材料,而且柔順到不致於將探針尖端插入該彈性 鲁 體爲底質材料(4 1 〇 )時損壞該探針尖端。適用之非限制 性彈性體爲底質材料可爲聚矽氧爲底質橡膠材料。 磨蝕粒子(420 )可由上述適於產生磨蝕表面之任何 材料製得,諸如金屬、合金、複合化合物或天然材料。該 磨鈾粒子的形式可爲粉末、顆粒、結晶或適於提供磨蝕特 徵之任何形式。 就本發明淸潔的上述構造任一者而言,亦可將一層可 移式保護膜覆於膠黏性凝膠層表面,其可於使用該淸潔裝 -26- (21) (21)200302537 置之前移開。 ΠΙ.製造淸潔裝置之方法 根據本發明第二實施樣態,如圖5所示,該淸潔裝置 的第一製備步驟係,將一定數量之以矽酮爲底的樹脂與自 約2 - 5重量%之交聯化合物以及一定量之觸媒(5 2 0 )混合 。該觸媒可以分別添加,或是在與該以矽酮爲底的樹脂混 合之前,與該交聯化合物事先混合。 第二步驟中,將形成之樹脂/交聯劑/觸媒混合物塗覆 在一暫時性基板(54〇與5 50 )上,以轉變成該磨蝕基板 層(554),或者其可直接塗覆在磨蝕基板層(540,560 與570 )表面上。使用暫時性基板(5 50 )時,適用之暫 時性基板包含但不局限於玻璃或聚對苯二甲酸伸乙酯( PET )膜。使用習知技術在基板之一上塗覆該混合物,此 等技術包括但不局限於轉塗法、噴塗、澆鑄、擠製或刮刀 塗佈。在該暫時性基板或磨蝕基板之一塗覆所需厚度之混 合物時,於第三步驟(5 5 2或5 8 0 )中固化該混合物。該 固化方法可爲適於固化樹脂/交聯劑/觸媒混合物之任何方 法。適用之固化方法實例包括但不局限於熱固化、光固化 或熱固化與光固化之組合。 若該以砂酮爲底的樹脂/交聯劑/觸媒混合物置於室溫 至少4 8小時’其具有自動復原性。使用熱固化時,適當 之固化溫度範圍自高於室溫至約1 5〇 t,進行時間自約 0 · 5小時至約4 8小時。通常,該固化時間與固化溫度呈反 比’因此在較问固化温度下所需要的時間較短。 -27- (22)200302537 在 化後, (5 54 ) ,將該 針尖端 該凝膠 類似上 。通常 量% 〇 該 驟中, 。此步 驟可當 得適當 固化後 純 凝膠層 範圍自 亦於約 根 )所述 係相對 需 5 3 0 ) 〇 暫時性基板(5 50 )上製備凝膠層時,於該凝膠固 自該暫時性基板移開該凝膠,並轉變成磨蝕基板層 之磨蝕表面。凝膠層之膠黏性具有充分黏著特徵 凝膠層固定在該磨蝕基板表面上。該磨鈾基板與探 係相同相材料之情況下,必須塗覆額外黏著層,將 層固定在該磨蝕基板表面上。適用之額外黏著層可 述樹脂/交聯劑/觸媒混合物,但其交聯劑濃度較低 ,此種額外黏著層之交聯劑濃度自約0.5至2.0重 膠黏性凝膠層塗覆於基板表面並固化之後,第四步 藉由熱處理(5 5 6或5 8 2 )純化所形成之層壓製件 驟期間,發生除氣作用,其自凝膠排除雜質。此步 作藉由提高溫度進行固化,或是藉由持續固化至製 固化產物所需程度之後的選擇性步驟。不過,於熱 提高該溫度爲佳。 化作用通常係在完全或部分真空下進行,其膠黏性 中形成的氣泡最少或不形成氣泡。適當之純化溫度 約100°C至180°C ’自約1至100小時。純化作用 大氣壓力至0.001托耳之壓力下進行。 據 American Society for Testing Materials ( ASTM 之測§式方法測量純化作用。適用於本發明之凝膠層 於凝膠層質量之除氣百分比小於約〇.5重量%者。 要圖3之淸潔裝置時,可如上述製備磨蝕基板( 在基板上形成磨蝕表面之後,可以例如將該膠黏 -28- (23) (23)200302537 性凝膠材料(1 0 0 )直接塗覆於基板之磨蝕表面,並使用 光界定步驟(5 7 5 )形成佈線圖。該光界定步驟係部分固 化步驟,其在基板上界定膠黏性凝膠層之圖案。該光界定 步驟可以例如使用遮罩,或是熟悉本技術者所習知在基板 上界定圖案的任何其他適用工具進行。該光界定步驟完成 後’藉由例如淸洗移除未固化樹脂(576 ),再次固化剩 餘樹脂(5 8 0 ),然後純化(5 8 2 )。根據此實例,膠黏性 凝膠材料列(1 〇 〇 )放置於磨鈾表面之表面磨蝕物(1 2 〇 ) 〇 另一實例中,可將膠黏性凝膠材料列(1 〇〇 )部分埋 入磨鈾基板(1 1 〇 )的表面內。至於此種構造,如上述( 5 3〇 )製備該磨蝕基板層。通常,隨後對所形成之磨蝕基 丰反層(1 1 〇 )進行以下步驟:(i )在磨鈾基板(1 10 )表 面形成溝或槽;(ii)在磨蝕基板表面上形成膠黏性凝膠 才才料(1 10 )之塗覆(540 ),以塡滿所產生之溝或槽;( Hi )例如’經由與磨蝕基板之槽狀區對應之遮罩,光界定 §亥膠黏性凝膠材料(5 7 5 ) ; ( iv )去除未固化膠黏性凝 月i #料(57 6 );( v )固化剩餘之部分固化膠黏性凝膠材 ^ ( 580 );以及(vi )純化所形成之固化膠黏性凝膠材 料(5 8 2 )。 亦、可在將以矽酮爲底的樹脂/交聯劑/觸媒混合物塗覆 6 _蝕基板表面(540 )之前,將一種感光性化合物添加 &目亥混合物(5 1 0,5 20 )中。藉由添加某些化合物,可使 @ t U 5夕酮爲底的樹脂混合物具有感光性,此等化合物包 -29- (24) (24)200302537 含但不局限於含丙烯酸或甲基丙烯酸聚合物化合物,諸如 (丙烯醢氧丙基)甲基矽氧烷-二甲基矽氧烷(PS8〇2,Among them, t is an integer from 0 to 10, and R is selected from Cl.2Q alkyl and Ci.2. Halogenated academic, phenyl or CV1. A phenyl group; and s is an integer from 0 to 800; and (c) a catalyst; in addition, wherein: the chain length of the silicone-based resin defined by the sum of m and η 値 in formula I is constant Greater than the chain length of the cross-linked compound defined by the sum of nV and η ′ 値 in formula II or the sum of p, q, and s 式 in formula πI. Alternatively, the adhesive gel layer can also be defined as a composition comprising a mixture of: (a) a resin based on a ketone ketone having a viscosity from about 2000 to 10,000 centipoise (cps); (b) a cross-linked compound having a viscosity from about 2 to 100 cps; and (c) a catalyst. The silicone-based resin chain length (i.e., size) is usually defined by the sum of Formula I-20- (15) (15) 200302537 m and η 値. Similarly, the size of the cross-linked compound is defined by the sum of m 'and η' 値 in the formula π, or by the sum of p, q, and s 値 in the formula II. Generally, in order to obtain the characteristics of the auto-recovery of the adhesive gel layer and non-adhesion to the probe tip, the chain length of the silicone-based resin is constant greater than the chain length of the cross-linking compound. The length of the silicone-based resin that meets this condition is equal to the length of the cross-linking compound, and any ratio that provides the self-healing property of the adhesive gel layer and the feature of not sticking to the probe tip is within the scope of the present invention. Inside. The representative non-limiting ratio of the length of the silicone-based resin to the length of the crosslinking compound is about 10: 1. Other ratios are applicable, but the prerequisite is that the resulting mixture will produce an adhesive gel layer with the characteristics described above. These characteristics can also be obtained by mixing the silicone-based resin with a crosslinking compound having the above-mentioned representative viscosity. 1. Silicone-based resin The compound of formula I is a long-chain polysiloxane polymer resin. Applicable long-term repair The viscosity of the chain polysiloxane polymer at room temperature must be from about 2000 to 10.0 cps, and the glass transition temperature is lower than about minus 65 ° C. Therefore, n and m 値 are selected so that the formed compound conforms to the required viscosity of the long-chain polysiloxane polymer resin. Generally, for a long-chain polysiloxane polymer, the sum of η and m 値 is not less than about 10. The sand-based resin is also quite pure, with low-molecular-weight pollutants not exceeding about 1%, and degassing being less than about 0.5%. This purity water accurately allows no contaminants to remain on the probe tip -21-(16) (16) 200302537 when the probe is removed from the gel. The present invention can use any silicone-based resin of formula I corresponding to the above-mentioned needs. Examples of suitable polysilicon substrate materials include, but are not limited to, Dow Corning 93-500, GE RTV567 (General Electric), PS444 and PS802 (United Chemical Technologies). 2. Cross-linking compound The cross-linking compound is a hydroxysiloxylated compound substituted with a monomer alkyl group, or a hydroxysilane oligomer resin having a short to medium chain length. For short-to-medium chain hydroxysilane oligomeric resins, the room temperature viscosity must be from about 2 to 100 cps. Therefore, for Formula II, P, q and s 値 are selected according to the desired viscosity range of the crosslinked compound. Generally, for short to medium chain long oligomeric resins, the sum of P, q, and s 値 is not greater than about 800. Suitable cross-linking compounds may be selected from, but not limited to, polymers and / or copolymers of PS 123 and PS 542 (United Chemical Technologies), methyl hydrogen-dimethylsiloxane, and hydroxysiloxane. φ This silicone-based resin, cross-linking compound and catalyst react to form the required gel characteristics of an adhesive gel layer. These features include a wide range of self-healing properties, tackiness, adhesion, stiffness, purity and operating temperature. Various components of the mixture can be added to the gel-forming reaction mixture 'or the catalyst can be combined with a cross-linking compound before polymerization with a silicone-based resin. The catalyst may be any catalyst known to those skilled in the art for curing resins, polymers, and the like. The curing catalysts suitable for the present invention include, but are not limited to,-22- (17) (17) 200302537 for platinum-containing catalysts. The amount of cross-linking compound mixed with the polysiloxane as the substrate material controls the desired characteristics of the adhesive gel layer formed. Therefore, one or more of the above-mentioned gel characteristics can be customized by controlling the amount of the crosslinking compound. According to an example of the present invention, a crosslinker is added to the polysiloxane as a substrate material from about 2.0 to 5.0% by weight to achieve the desired gel characteristics. It is preferable to add a crosslinking agent from about 2.0 to about 3.0% by weight of the polysiloxane as the substrate material. If the amount of the cross-linking compound added to the silicone-based resin is less than about 2.0% by weight, the gel may be transferred to the probe tip when the probe tip comes in and out of the adhesive gel layer. In addition, if the amount of the crosslinking agent added to the silicone-based resin is more than about 5.0% by weight, the gel is usually too hard to clean the probe tip. The self-healing property of the adhesive gel layer is generally defined as the ability of the gel to automatically close the holes formed by the probe tip when the probe is removed from the gel. Generally, when the probe is inserted into an adhesive gel layer, the gel material is eliminated, thereby creating holes. When the probe is removed, the excluded gel flows back into the hole. The hole is preferably closed within a few seconds, so the gel flowing back into the hole fills the hole, and its thickness is not less than 50% of the original gel thickness. The 90 degree foil peel test was used to determine the adhesion of the gel layer. For this test, a piece of aluminum foil (Γ X 3 ") was laminated on the gel, and its unpolished surface was in contact with the gel. The foil was attached to a splint, and the code of the splint was increased so that The splint with increased code peels off the foil from the gel at a 90 degree angle. The code is added to the splint until the peel rate reaches 2 inches / minute. The total code recorded at this rate is the gel Adhesive-23- (18) (18) 200302537. The applicable adhesive force of the adhesive gel material of the present invention is in the range of about 0.10 to 100 g / inch. The purity of the gel layer is determined by The quantity of the cured gel product is defined as outgassing. The outgassing percentage of the cured adhesive gel layer suitable for the present invention must be less than 0.5% by weight of the total mass of the gel, which is based on the American Society for Testing of Materials (ASTM) method E595. The operating temperature range of this adhesive gel layer is from about minus 40 ° C to 15 ° C. Within this temperature range, the above characteristics of the adhesive gel layer must be changed very much. With little or no significant change. The thickness of the adhesive gel layer is usually slightly less than The corresponding length of the surface or range of the probe tip. Therefore, this is the case where the probe tip can penetrate the adhesive gel layer and contact the underlying abrasive substrate layer. Generally, the length of the probe tip to be cleaned From about 1 to 250 μηι. Therefore, the thickness of the adhesive gel layer is less than about 1 μηι to about 200 μΐΏ. 3. Orientation of the components According to the second aspect of the present invention, the cleaning device The viscous gel layer (100) is prepared by attaching to the abrasive surface of a homogeneous abrasive uranium substrate (1 丨 〇) or the abrasive surface layer of a heterogeneous abrasive substrate (1 40). The pre-formed gel layer can be prepared by Transfer to the surface of the abrasive substrate, or directly coat the silicone-based resin / crosslinker / catalyst mixture on the abrasive surface of the abrasive substrate layer to form a gel layer on the surface of the abrasive uranium substrate The adhesive gel layer is attached to the abrasive substrate layer (1 1 0,1 40). (19) (19) 200302537 Generally, the space structure of the cleaning device of the present invention is flat, and it can be further described as Abrasive substrate layer (110,140) with adhesive gel layer (1 00) "pad" as shown in Figures 1A and 1B. In another example of the present invention, the pad can also form an interlaced region with an adhesive gel layer and an abrasive substrate layer. Figure 3 shows the cleanliness of the present invention. A perspective view of the device pad, wherein the pad has a region of adhesive gel material (100), which is separated by an abrasive surface (120) on the exposed surface of the abrasive substrate layer (110). The abrasive substrate layer (110) is a homogeneous abrasive substrate layer (110). However, such a structure can also be prepared by using a heterogeneous abrasive substrate layer (140) shown in FIG. 1B. Both the homogeneous and heterogeneous structures can be selectively laminated on the protective substrate (130), as shown by the dashed lines in FIG. In addition, as shown in Fig. 3, the ground uranium surface of the pad has a groove-like pattern, in which these are discharged from the front to the rear of the pad. This pattern is only a representative structure. The trough-like abrasion can also be discharged from one side of the pad to the other (ie, from left to right). During this construction, move the probe tip in the area of the cleaning pad along the alignment of the groove. As such, the tip of the probe moving in the abrasive surface area of the pad typically moves in a single direction. Or 'for the cleaning pad (or FIG. 1A or 1B) of the structure shown in FIG. 3, the abrasive surface characteristics of the abrasive substrate layer (1 10, 1 40) may also be selected from ridges, pillars, ridges, or Roughness formed by sedimentary powder, particles, granules or crystals. In this aspect of the invention, the movement of the probe tip on the abraded surface is a multi-directional movement. In general, multi-directional movement can be obtained from abrasive surface features that do not limit the movement of the probe tip to a single direction. In this concept, the phrase “without limitation on the movement of the probe tip” means any movement that may be damaged by the probe tip, as recognized by those familiar with the technology -25- (20) (20) 200302537. . When the surface abrasion substance of the abrasive substrate layer (110, WO) is, for example, bumps, columns, and / or ridges, if the abraded surface has the same hardness as the probe tip, the vertex and / or edge of the surface abrasion substance constitutes Sharp shapes are preferred. Conversely, 'if the hardness of the surface abraded material of the abraded substrate is greater than the hardness of the tip of the probe', it is preferable that the vertex and / or edge of the surface abraded material form an arc shape. These constructions improve cleaning efficiency and also protect the probe tip from damage during cleaning. Φ FIG. 4 depicts another example of the cleaning device of the present invention, in which an elastomer is used as a substrate material (4 1 0) is laminated on a substrate layer (1 4 1), in which abrasive particles (420) are dispersed and dispersed The elastic body is supported on the substrate material (410). The substrate layer (丨 4 丨) may be any material of the abrasive substrate layer (110,140) discussed above. An adhesive gel layer (ιOO) was laminated on the upper surface of the elastomer as a substrate material (4o). The elastic body is a substrate material (4 1 0) can be any material capable of carrying abrasive particles, and is compliant so as not to damage the probe when the probe tip is inserted into the elastic body as the substrate material (4 1 0). Probe tip. A suitable non-limiting elastomer is a substrate material, which may be polysiloxane as a substrate rubber material. The abrasive particles (420) can be made from any of the materials described above, which are suitable for producing abrasive surfaces, such as metals, alloys, composite compounds, or natural materials. The form of the ground uranium particles may be powder, granules, crystals, or any form suitable for providing abrasive characteristics. With regard to any of the above-mentioned structures of the present invention, a removable protective film can also be covered on the surface of the adhesive gel layer, which can be used in the present cleaning equipment-26- (21) (21) 200302537 Move away before placing. ΠΙ. Method for manufacturing a cleaning device According to a second embodiment of the present invention, as shown in FIG. 5, the first preparation step of the cleaning device is to mix a certain amount of silicone-based resin with about 2- 5% by weight of the cross-linking compound and a certain amount of catalyst (520) are mixed. The catalyst can be added separately or mixed with the crosslinking compound before mixing with the silicone-based resin. In the second step, the formed resin / crosslinker / catalyst mixture is coated on a temporary substrate (54 and 5 50) to be converted into the abrasive substrate layer (554), or it can be directly coated On the surface of abraded substrate layers (540, 560, and 570). When using a temporary substrate (5 50), suitable temporary substrates include but are not limited to glass or polyethylene terephthalate (PET) film. The mixture is applied on one of the substrates using conventional techniques including, but not limited to, transfer coating, spray coating, casting, extrusion, or doctor blade coating. When one of the temporary substrate or the abrasive substrate is coated with a mixture of a desired thickness, the mixture is cured in a third step (552 or 580). The curing method may be any method suitable for curing a resin / crosslinking agent / catalyst mixture. Examples of suitable curing methods include, but are not limited to, heat curing, light curing, or a combination of heat curing and light curing. If the resin / crosslinking agent / catalyst mixture based on the ketone ketone is left at room temperature for at least 48 hours, it has an auto-recovery property. When using thermal curing, the appropriate curing temperature range is from above room temperature to about 150 t, and the duration is from about 0.5 hours to about 48 hours. In general, this curing time is inversely proportional to the curing temperature 'and therefore the time required at a lower curing temperature is shorter. -27- (22) 200302537 After chemical conversion, (5 54), the needle tip is similar to the gel. Normal amount% 〇 In this step,. In this step, when the range of the pure gel layer after the solidification is obtained, the range of the pure gel layer is about 5 30). When the gel layer is prepared on the temporary substrate (5 50), the gel is solidified from the gel. The temporary substrate removes the gel and transforms into an abrasive surface that abrades the substrate layer. The adhesiveness of the gel layer has sufficient adhesion characteristics. The gel layer is fixed on the surface of the abrasive substrate. In the case where the ground uranium substrate is of the same phase material as the exploration system, an additional adhesive layer must be applied to fix the layer on the surface of the ground substrate. Suitable additional adhesive layer can be described as resin / crosslinker / catalyst mixture, but its crosslinker concentration is low. The crosslinker concentration of this additional adhesive layer is from about 0.5 to 2.0 After curing on the surface of the substrate, the fourth step is to purify the formed laminate by heat treatment (5 5 6 or 5 8 2). During the step, outgassing occurs, which removes impurities from the gel. This step is an optional step followed by curing by increasing the temperature, or by continuously curing to the extent required to produce the cured product. However, it is better to increase the temperature under heat. The chemical reaction is usually carried out under a full or partial vacuum, and the bubbles formed in the adhesiveness have the least or no bubbles. A suitable purification temperature is about 100 ° C to 180 ° C 'for about 1 to 100 hours. Purification is performed at atmospheric pressure to a pressure of 0.001 Torr. Purification is measured according to the American Society for Testing Materials (ASTM method). The gel layer suitable for the present invention has a degassing percentage of less than about 0.5% by weight of the gel layer. To the cleaning device of FIG. 3 At this time, the abrasive substrate can be prepared as described above (after the abrasive surface is formed on the substrate, for example, the adhesive -28- (23) (23) 200302537 sex gel material (100) can be directly coated on the abrasive surface of the substrate And use a light-defining step (5 7 5) to form a wiring pattern. The light-defining step is a partial curing step that defines the pattern of the adhesive gel layer on the substrate. The light-defining step can use, for example, a mask, or Any other suitable tool familiar to those skilled in the art to define a pattern on a substrate is performed. After the light definition step is completed, the uncured resin (576) is removed by, for example, washing, and the remaining resin (5 8 0) is cured again, It is then purified (5 8 2). According to this example, a row of adhesive gel material (100) is placed on the surface abrasion (1 2 0) on the surface of ground uranium. In another example, the adhesive can be coagulated. Glue material column (1 〇 ) Is partially embedded in the surface of the ground uranium substrate (110). As for this structure, the ground substrate layer is prepared as described above (530). Generally, the formed abrasive base layer (1 110) is subsequently ) Carry out the following steps: (i) forming grooves or grooves on the surface of the ground uranium substrate (1 10); (ii) forming an adhesive gel (1 10) coating (540) on the surface of the ground substrate, Fill up the grooves or grooves generated; (Hi) For example, 'through the mask corresponding to the groove-shaped area of the abraded substrate, light-defining adhesive glue material (5 7 5); (iv) remove uncured Adhesive gelatin i # material (57 6); (v) the remaining part of the cured adhesive gel material ^ (580); and (vi) purified cured adhesive gel material (5 8 2). Alternatively, before coating the silicone-based resin / crosslinker / catalyst mixture on the substrate surface (540), a photosensitive compound can be added to the & mesh mixture (5 1 0 , 5 20). By adding certain compounds, @ t U 5 ketone-based resin mixture can be made photosensitive, these compounds include -29- (24) (24) 2003 02537 Contains, but is not limited to, acrylic or methacrylic polymer-containing compounds, such as (acrylic acidoxypropyl) methylsiloxane-dimethylsiloxane (PS802,

United Chemical Technologies),其數量約爲該聚矽氧樹 脂的0.5重量%至60重量%。可於以矽酮爲底的樹脂混合 物中添加光起始劑,諸如二甲氧基苯基苯乙酮,其數量約 爲該以矽酮爲底的樹脂的1.0至5.0重量%。 IV.淸潔探針尖端之方法 修 測試半導體晶圓期間所產生之破片的特徵是鬆散地黏 附在探針上之破片或是較緊地黏附在探針上之破片。鬆散 破片之非限制實例包括於探針尖端隨著測試晶圓而移動期 間,自晶粒表面轉變成探針尖端側邊之破片。較緊地黏附 於探針之破片非限制實例包括與該探針合金化(即,熔融 )之破片。合金化破片可能是該墊材料(來自受測晶圓) 與該探針尖端熔融所形成。此種破片的附著交互作用比通 常附著在探針尖端側邊之鬆散破片強。 @ 本發明之淸潔裝置相當適於在單一淸潔循環(即,將 探針尖端插入該淸潔裝置,並自該處取出)中去除這兩種 破片。通常,當探針尖端插入該膠黏性凝膠層時,該膠黏 性凝膠層會去除鬆散破片(一般位於該探針尖端側邊)。 當該探針尖端通過磨鈾基板之磨鈾表面時,該較緊密黏附 於探針之破片通常會鬆脫或是被去除。若因通過磨蝕基板 表面而去除此等破片,該破片可能會留在磨蝕表面與膠黏 性凝膠層之界面或其附近。若該破片只是鬆脫,並未因通 -30- (25) (25)200302537 過磨蝕基板之磨蝕表面而被去除,該膠黏性凝膠層可於該 探針尖端自膠黏性凝膠層拔出時去除鬆脫之破片。 如此,根據本發明第三實例以及圖6a至6d所示,完 成淸潔探針尖端之方法。由於數個探針尖端裝附於一探針 卡上,通常同時淸潔彼。 通常,如圖6a與6b所示,將附著有破片之一或多個 探針尖端(6 0 0 )壓入並通過膠黏性凝膠材料(1 〇 〇 ),因 此使其與磨鈾基板層(11 0 )接觸。當與磨蝕基板層(11 〇 )表面接觸時,以X平面(即,自然擦拭方向)移動探針 尖端(6 0 0 ),並選擇性以Y平面移動。該X移動多少會 發出聲音,用意在使表面磨蝕物排除附著於探針尖端( 601 )之破片(61 1 ),如圖6c所示。由於膠黏性凝膠層 (1 〇〇 )具有自動復原性,探針尖端之X移動不會對凝膠 層產生無法接受之損壞。 然後,自淸潔裝置取出探針尖端(6 01 )。自凝膠層 (1 00 )取出探針尖端時,由於該探針尖端係以Z軸方向 自凝膠拔出,故被基板之磨鈾表面鬆脫但是仍然附著在探 針尖端之破片(6 1 2 )會黏附於膠黏性凝膠層。如此,自 膠黏性凝膠材料拔出之探針尖端(60 1 )除了沒有任何膠 黏性凝膠材料之外,亦沒有任何破片。 該探針尖端穿入凝膠層,並自該凝膠層取出構成一個 淸潔循環。本發明之淸潔方法並不局限於特定淸潔循環次 數。該淸潔方法可以重複進行此方法者認爲所需要之次數 。通常,該循環可以重複約1至1000次。若需要進行一 (26) (26)200302537 次以上淸潔循環,探針尖端隨後不一定穿入與第一次穿入 時相同位置。自凝膠層收回之後,可移動淸潔裝置或探針 尖端之一,如此隨後可穿入膠黏性凝膠層的未使用區域。 在一備擇實例中,可以改良上述圖6淸潔探針尖端之 方式,使得探針尖端在不接觸磨蝕基板的磨蝕表面(1 20 )之下進行淸潔作用。此實例中,該探針尖端穿透膠黏性 凝膠層(1 00 )表面,但不接觸磨蝕表面,通過膠黏性凝 膠層進行X移動,然後自膠黏性凝膠層取出探針尖端。 具有圖3所述構造之淸潔裝置係根據圖7A與7B淸 潔,其可用以淸潔本發明之一或多個探針尖端。此種構造 極適於淸潔彈簧型探針尖端,諸如F ο 1· m F a c t ο 1·,I n c .所製 造之彈簧型探針尖端。 通常,如圖7 Α所示,使附著破片(7 1 0 )之一或多個 探針尖端(700 )與一或多個膠黏性凝膠層區(1〇〇)接觸 ,然後以X平面(7 1 0 )移動。破片(7 1 1 )鬆脫,並黏附 於膠黏性凝膠層(1 00 )。自膠黏性凝膠層(1 00 )移開該 探針尖端,然後定位在緊鄰膠黏性凝膠層(1 00 )之磨蝕 基板(1 1 0 )的磨蝕表面上。如圖7 B所示,然後使探針尖 端(702 )與磨蝕基板(110 )之表面磨蝕物(120 )接觸 ,並以X方向(703 )橫跨過基板表面。因此種移動,而 逐出黏附在探針尖端(702 )的破片(712 )。然後,自該 基板表面移開探針尖端(703 )。 該淸潔循環可視需要重複數次,其中探針尖端可以輪 流接觸該凝膠區與基板之磨蝕表面。因此,該探針尖端於 -32- (27) (27)200302537 淸潔循環期間通過該淸潔裝置表面,每個循環通替通過不 同區域。 當探針尖端以陣列排列在探針卡上時,可以進行淸潔 作用,使一或多列探針尖端與膠黏性凝膠層(1 00 )接觸 ,同時使一或多列探針尖端與磨蝕基板層之磨蝕表面接觸 。進行淸潔循環時,各列探針尖端的起始位置輪流位於凝 膠區(100)與表面磨蝕物(120),視需要進行數次以達 到所需淸潔水準。 Φ 圖8描述使用圖4淸潔裝置時,用以淸潔探針尖端之 方法。此實例中,使黏附有破片(8 1 0 )之探針尖端(800 )插入膠黏性凝膠層(1 00 )。該膠黏性凝膠層黏附某些 破片(8 1 1 ),並自該探針尖端(80 1 )除下此等破片。將 探針尖端(801,802 )推過膠黏性凝膠層(100),進入包 含磨蝕粒子(420 )之彈性體樹脂層(4 1 0 )。當探針尖端 與磨蝕粒子接觸時,該接觸會除去額外破片(8 1 2 ),其 會留在彈性體樹脂層(41 0 )中。分別自層41 0與1 00抽 鲁 出探針尖端(802,803 )時,當探針尖端(803 )退出層( 1 00 ),因該膠黏性凝膠層而去除殘留(8 1 4 )在探針尖端 (8 02 )上之任何破片(8 1 3 )。本熟悉本技術者亦可視需 要經常重複發明之淸潔循環。 本發明此實施樣態中,只要該探針尖端在膠黏性凝膠 層(100 )內,即可能以X平面移動探針尖端。由於該彈 性體層之剛性與其中磨蝕基板粒子之故,彈性體樹脂層內 的移動通常局限於Z平面。 -33- (28) (28)200302537 本發明之淸潔裝置可與探針卡包裝成一套用具。該套 用具包含本發明上述實例之淸潔裝置與一探針卡。 圖9顯示本發明淸潔裝置如上述淸潔探針尖端之能力 。圖9A顯示以本發明淸潔裝置淸潔前之探針尖端。圖9β 顯示以本發明淸潔裝置淸潔後之圖9A探針尖端,其包括 與2· 5 %交聯化合物混合之Dow Corning 93 - 500聚矽氧樹脂 ’其係一種低分子量二甲基與氫甲基聚矽氧共聚物。 雖然已說明本發明特定實例,但是須暸解其僅爲實例 ’並無限制用意。熟悉本技術者將會明白,在不偏離附錄 申請專利範圍所界定之發明精神與範圍之下,可以在形式 與細節上得到各種變化。因此,本發明之幅度與範圍不應 局限於上述範例實例,而是由下文申請專利範圍與其同等 物界定。 本揭示中引述的所有參考資料全文係以提及的方式倂 入本文中。 【圖式簡單說明】 圖1 A顯示一種同質清潔裝置。 圖1B顯示一種異質淸潔裝置。 圖1 C顯示一種淸潔裝置’其捲線筒上具有膠黏性凝 膠層,而且延伸過該磨鈾基板的磨蝕表面。 圖2描述相對於探針尖端之磨蝕基板表面細節。 圖3顯示具有膠黏性凝膠材料與磨蝕表面交錯區域之 淸潔裝置。 -34- (29) (29)200302537 圖4顯示層壓在埋有磨蝕粒子之彈性樹脂層上面之膠 黏性凝膠層。 圖5顯示一種用以製造本發明淸潔裝置之方法。 圖6A-6D顯示使用圖1A之同質淸潔裝置淸潔探針尖 端之方法。 圖7 A與7 B顯示使用圖3之淸潔裝置淸潔探針尖端 之方法。 圖8顯示使用圖4之淸潔裝置淸潔探針尖端之方法。 圖9A與9B顯示以本發明實施例之淸潔裝置淸潔前 後之探針尖端。 [主要元件對照表] 130保護層 11 0磨蝕基板層 100膠黏性凝膠層 120 突起 140磨蝕基板層 1 4 1基板層 1 4 2 磨蝕層 1 5 0捲線筒 105 淸潔裝置 160壓板 1 7 0 滾軸 180 探針卡 -35- (30) (30)200302537 1 8 5 探針尖端 1 9 0滾軸 200探針尖端 4 1 0以彈性體爲底的材料 420 磨蝕粒子 600探針尖端 6 1 0破片 611破片 601探針尖端 700探針尖端 7 1 0破片 7 1 1破片 702探針尖端 703探針尖端 800探針尖端 8 1 0破片 8 1 1破片 8 0 1 / 8 0 2 探針尖端 8 1 2破片 8 1 3破片 5 1 0添加選擇性感光劑 520混合矽樹脂與交聯劑和觸媒 5 3 0製備磨鈾基板 540將混合物塗覆於基板 (31) (31)200302537 5 5 0暫時性基板 5 60同質基板 570異質基板 57 6去除未固化之樹脂混合物 5 5 2 固化 5 80固化 5 8 2 純化 5 7 5選擇性光界定 5 54將固化混合物(膠黏性凝膠轉變成磨蝕基板 5 5 6 純化United Chemical Technologies) in an amount of about 0.5% to 60% by weight of the silicone resin. A photo-starter such as dimethoxyphenylacetophenone may be added to the silicone-based resin mixture in an amount of about 1.0 to 5.0% by weight based on the silicone-based resin. IV. Method for cleaning the tip of a probe The breaks generated during the test of a semiconductor wafer are characterized by loosely adhered fragments or tightly adhered fragments. Non-limiting examples of loose fragments include fragments that change from the surface of the die to the sides of the probe tip while the probe tip moves with the test wafer. Non-limiting examples of fragments that adhere tightly to the probe include fragments that are alloyed (i.e., melted) with the probe. The alloyed fragment may be formed by melting the pad material (from the wafer under test) with the probe tip. This type of fragment has a stronger attachment interaction than a loose fragment normally attached to the side of the probe tip. @ The cleaning device of the present invention is quite suitable for removing these two fragments in a single cleaning cycle (ie, inserting the probe tip into the cleaning device and removing it there). Generally, when the probe tip is inserted into the adhesive gel layer, the adhesive gel layer removes loose fragments (typically located on the side of the probe tip). When the probe tip passes through the ground uranium surface of the ground uranium substrate, the fragment that is more closely attached to the probe is usually loosened or removed. If these fragments are removed by abrading the surface of the substrate, the fragments may remain at or near the interface between the abrasive surface and the adhesive gel layer. If the fragment is only loose and has not been removed by -30- (25) (25) 200302537 over-abrasive surface of the substrate, the adhesive gel layer can be self-adhesive gel at the tip of the probe Remove the loose fragments when the layer is pulled out. Thus, according to the third example of the present invention and as shown in Figs. 6a to 6d, a method of cleaning the probe tip is completed. Since several probe tips are attached to a probe card, they are usually cleaned at the same time. Usually, as shown in Figs. 6a and 6b, one or more probe tips (600) with attached fragments are pressed into and passed through the adhesive gel material (100), so they are brought into contact with the ground uranium substrate. The layer (110) is in contact. When in contact with the surface of the abrasive substrate layer (110), the probe tip (600) is moved in the X-plane (that is, the natural wiping direction), and is selectively moved in the Y-plane. This X movement will make a sound to some extent, in order to make the surface abrasion object remove the fragment (61 1) attached to the probe tip (601), as shown in FIG. 6c. Due to the self-healing nature of the adhesive gel layer (100), X movement of the probe tip will not cause unacceptable damage to the gel layer. Then, remove the probe tip (6 01) from the cleaning device. When the probe tip was taken out from the gel layer (100), the probe tip was pulled out of the gel in the Z-axis direction, so it was loosened by the ground uranium surface of the substrate but still attached to the probe tip's fragment (6 1 2) It will adhere to the adhesive gel layer. In this way, the probe tip (60 1) pulled out from the adhesive gel material does not have any adhesive gel material, nor does it have any fragments. The probe tip penetrates into the gel layer and is taken out of the gel layer to form a cleaning cycle. The cleaning method of the present invention is not limited to a specific cleaning cycle number. This cleansing method can be repeated as many times as the person thinks necessary. Generally, this cycle can be repeated about 1 to 1000 times. If more than one (26) (26) 200302537 cleaning cycle is required, the probe tip may not necessarily penetrate into the same position as it did the first time. After the gel layer is retracted, one of the cleaning devices or probe tips can be moved so that it can then penetrate into the unused area of the adhesive gel layer. In an alternative example, the method of cleaning the probe tip of FIG. 6 described above may be modified so that the probe tip performs a cleaning action without contacting the abrasive surface (120) of the abrasive substrate. In this example, the tip of the probe penetrates the surface of the adhesive gel layer (100), but does not touch the abrasive surface. X-movement is performed through the adhesive gel layer, and then the probe is removed from the adhesive gel layer Tip. The cleaning device having the configuration described in FIG. 3 is cleaned according to FIGS. 7A and 7B and can be used to clean one or more probe tips of the present invention. This structure is very suitable for cleaning spring-type probe tips, such as F ο 1 · m F a c t ο 1 ·, I n c. Generally, as shown in FIG. 7A, one or more probe tips (700) of the attachment fragment (7 1 0) are brought into contact with one or more adhesive gel layer regions (100), and then X The plane (7 1 0) moves. The fragment (7 1 1) is loosened and adheres to the adhesive gel layer (100). The probe tip is removed from the adhesive gel layer (100), and then positioned on the abrasive surface of the abrasive substrate (110) immediately adjacent to the adhesive gel layer (100). As shown in FIG. 7B, the probe tip (702) is then brought into contact with the surface abrasion object (120) of the abrasive substrate (110), and straddles the substrate surface in the X direction (703). As a result of this movement, the fragment (712) stuck to the probe tip (702) is expelled. Then, the probe tip is removed from the surface of the substrate (703). The cleaning cycle can be repeated as many times as necessary, in which the probe tip can alternately contact the abraded surface of the gel region and the substrate. Therefore, the tip of the probe passed through the surface of the cleaning device during the -32- (27) (27) 200302537 cleaning cycle, with each cycle passing through a different area. When the probe tips are arranged in an array on the probe card, a cleaning effect can be performed, so that one or more rows of probe tips are brought into contact with the adhesive gel layer (100), while one or more rows of probe tips are brought into contact. In contact with the abrasive surface of the abrasive substrate layer. During the cleaning cycle, the starting positions of the probe tips of each column are alternately located in the gel zone (100) and the surface abrasion (120), and several times as needed to achieve the required cleaning level. Φ Figure 8 describes the method for cleaning the probe tip when using the cleaning device of Figure 4. In this example, a probe tip (800) with a fragment (8 1 0) is inserted into the adhesive gel layer (1 00). The adhesive gel layer adheres to some fragments (8 1 1), and removes these fragments from the probe tip (80 1). Push the probe tip (801, 802) through the adhesive gel layer (100) and enter the elastomeric resin layer (4 1 0) containing abrasive particles (420). When the probe tip comes into contact with abrasive particles, this contact removes additional fragments (8 1 2), which remain in the elastomeric resin layer (41 0). When the probe tip (802,803) is pulled out from the layers 41 0 and 100 respectively, when the probe tip (803) exits the layer (100), the residue (8 1 4) is removed due to the adhesive gel layer. Any fragment (8 1 3) on the probe tip (8 02). Those skilled in the art may also repeat the cleaning cycle of the invention as often as necessary. In this embodiment of the present invention, as long as the probe tip is within the adhesive gel layer (100), it is possible to move the probe tip in the X plane. Due to the rigidity of the elastomer layer and the substrate particles abraded therein, movement within the elastomer resin layer is usually limited to the Z plane. -33- (28) (28) 200302537 The cleaning device of the present invention and the probe card can be packaged into a set of appliances. The kit includes the cleaning device and a probe card of the above-mentioned example of the present invention. Figure 9 shows the capability of the cleaning device of the present invention, such as the cleaning probe tip described above. FIG. 9A shows the probe tip before cleaning with the cleaning device of the present invention. FIG. 9β shows the probe tip of FIG. 9A after cleaning with the cleaning device of the present invention, which includes Dow Corning 93-500 silicone resin mixed with 2.5% cross-linking compound, which is a low molecular weight dimethyl and Hydrogen methyl polysiloxane. Although specific examples of the present invention have been described, it should be understood that they are merely examples and are not intended to be limiting. Those skilled in the art will understand that without departing from the spirit and scope of the invention as defined by the scope of the appended patent application, various changes can be made in form and detail. Therefore, the scope and scope of the present invention should not be limited to the above-mentioned exemplary examples, but should be defined by the scope of the patent application below and its equivalents. All references cited in this disclosure are incorporated herein by reference in their entirety. [Schematic description] Figure 1 A shows a homogeneous cleaning device. FIG. 1B shows a heterogeneous cleaning device. Fig. 1C shows a cleaning device 'having a cohesive gel layer on its reel and extending across the abrasive surface of the ground uranium substrate. Figure 2 depicts details of the surface of the abrasive substrate relative to the probe tip. Fig. 3 shows a cleaning device having a staggered area of an adhesive gel material and an abrasive surface. -34- (29) (29) 200302537 Fig. 4 shows an adhesive gel layer laminated on an elastic resin layer embedded with abrasive particles. Fig. 5 shows a method for manufacturing a cleaning device according to the present invention. Figures 6A-6D show a method of cleaning the tip of a probe using the homogeneous cleaning device of Figure 1A. 7A and 7B show a method of cleaning the probe tip using the cleaning device of FIG. FIG. 8 shows a method of cleaning the probe tip using the cleaning device of FIG. 4. 9A and 9B show the probe tip before and after cleaning with the cleaning device according to the embodiment of the present invention. [Comparison table of main components] 130 protective layer 11 0 abrasion substrate layer 100 adhesive gel layer 120 protrusion 140 abrasion substrate layer 1 4 1 substrate layer 1 4 2 abrasion layer 1 5 0 reel 105 cleaning device 160 pressure plate 1 7 0 Roller 180 Probe Card -35- (30) (30) 200 302 537 1 8 5 Probe tip 1 9 0 Roller 200 Probe tip 4 1 0 Material based on elastomer 420 Abrasive particles 600 Probe tip 6 1 0 fragment 611 fragment 601 probe tip 700 probe tip 7 1 0 fragment 7 1 1 fragment 702 probe tip 703 probe tip 800 probe tip 8 1 0 fragment 8 1 1 fragment 8 0 1/8 0 2 probe Tip 8 1 2 Fragment 8 1 3 Fragment 5 1 0 Add selective photosensitizer 520 Mix silicone resin with cross-linking agent and catalyst 5 3 0 Prepare ground uranium substrate 540 Apply the mixture to the substrate (31) (31) 200302537 5 5 0 temporary substrate 5 60 homogeneous substrate 570 heterogeneous substrate 57 6 removal of uncured resin mixture 5 5 2 curing 5 80 curing 5 8 2 purification 5 7 5 selective light definition 5 54 curing mixture (adhesive gel transformation Into abrasive substrate 5 5 6 purification

Claims (1)

200302537200302537 拾、申請專利範圍 1、一種用以淸潔探針之末端部分的探針淸潔裝置, 而該探針係用來測試半導體晶圓,該探針淸潔裝置包含: (i ) 一磨蝕基板層;以及 (ii ) 一膠黏性凝膠層,其中該膠黏性凝膠層係 與該磨蝕基板之磨蝕表面接觸;該膠黏性凝膠層包含: (a )具有式I之以矽酮爲底的樹脂:Patent application scope 1. A probe cleaning device for cleaning the end portion of a probe, and the probe is used to test a semiconductor wafer. The probe cleaning device includes: (i) an abrasive substrate Layer; and (ii) an adhesive gel layer, wherein the adhesive gel layer is in contact with the abrasive surface of the abrasive substrate; the adhesive gel layer comprises: (a) a silicon having formula I Ketone-based resin: R4- SiH-O—Si-)irD-(-Si 一 0^-Si ——R4 R5 Me Me R5 其中: R】、R2、R3、R4與R5各選自氫、Cu烷基、Cu鹵代 烷基、乙烯基或CV6丙烯醯氧烷基,而且Ri、R2、R3、R4 與r5中至少其中一者爲乙烯基; D 係選自 _〇-、-S-、- ( CH2 ) rCH2-、- ( CH2 ) rCH2〇-與- 〇(CH2) rCH2-之二價鍵,其中,ι·爲自〇至1〇之整數 ;以及 η與m各爲自0至1 〇 〇 〇之整數,其中,m與η的總 和不小於約10 ;以及 (b ) —種交聯化合物,其係選自: (i )具有式II之化合物: Rc .Xo-L Me R2' r3· I I • D—(-Si—〇j^r-Si — Me R5· -38- (2) (2) 200302537 其中,Rr、R2,、R3,、R4,、R5,、m,與W各選自界定上述R〗 、R2、R3、R4、R5、m與n之群組,但其先決條件是不存 在乙燒基;或者 (u )具有式III之化合物:R4- SiH-O—Si-) irD-(-Si-0 ^ -Si ——R4 R5 Me Me R5 where: R], R2, R3, R4 and R5 are each selected from hydrogen, Cu alkyl, Cu haloalkyl , Vinyl or CV6 acryloxyalkyl, and at least one of Ri, R2, R3, R4 and r5 is vinyl; D is selected from _〇-, -S-,-(CH2) rCH2-,- (CH2) rCH2〇- and-〇 (CH2) rCH2- are divalent bonds, where ι · is an integer from 0 to 10; and η and m are each an integer from 0 to 1,000, where: The sum of m and η is not less than about 10; and (b) a cross-linking compound selected from: (i) a compound having formula II: Rc. Xo-L Me R2 'r3 · II • D — (- Si—〇j ^ r-Si — Me R5 · -38- (2) (2) 200302537 Among them, Rr, R2 ,, R3 ,, R4 ,, R5 ,, m, and W are each selected from the definition of R described above, A group of R2, R3, R4, R5, m and n, but its prerequisite is the absence of an ethyl group; or (u) a compound of formula III: 其中= R6、R7、R8、R9、R〗。與 Rll 各選自··氨、Cl-2 0 院基、 Cm鹵代烷基、苯基或Ο.ιο烷基苯基; P與0各爲自〇至800之整數; T 係選自單鍵、-(CHO,CH2-' -(CH2) rCH2〇-或 R I ——Si-〇一 「丨1 〇 I Me Si--Me 〇 I Me-Si-Me I Me 其中,t係自0至10之整數’ R係選自Cl-2。院基、Cl-2。鹵 代烷基、苯基或Cmo烷基苯基;而s係自0至800之整數 ;以及 (C ) 一種觸媒; 另外,其中: -39- (3) (3)200302537 由式I之m與η値總和所界定之聚以矽酮爲底的樹脂 的鏈長恆大於由式II之m’與η’値總和或式ΠΙ之p、q與 s値總和所界定之交聯化合物的鏈長。 2、 如申請專利範圍第1項之探針淸潔裝置,其中, 該磨蝕基板層係由選自過渡金屬、金屬合金、複合化合物 或天然材料之材料所組成的。 3、 如申請專利範圍第2項之探針淸潔裝置,其中, 該磨蝕基板層之磨蝕表面包含呈粉末、粒子、顆粒或結晶 形式之該種材料。 4、 如申請專利範圍第3項之探針淸潔裝置,其中, 該磨蝕基板層係同質或異質的。 5、 如申請專利範圍第2項之探針淸潔裝置,其中, 該過渡金屬係選自由銅、鎳、鈀、鎢、銶、铑與鈷所組成 之群組。 6、 如申請專利範圍第2項之探針淸潔裝置,其中, 該金屬合金係選自由鈀/銅、鉬/鉻與鈦/鎢所組成之群組。 7、 如申請專利範圍第2項之探針淸潔裝置,其中, 該複合化合物係選自由碳化鎢、碳化矽、氮化矽、二氧化 矽、氮化鋁、氧化鋁、氧化鉻或氮化鈦所組成之群組。 8、 如申請專利範圍第2項之探針淸潔裝置,其中, 該天然材料係選自矽石、氧化鋁、金剛石或類金剛石碳所 組成之群組。 9、 如申請專利範圍第2項之探針淸潔裝置,其中, 該磨蝕基板層具有表面磨蝕物,其係由:表面粗糖化、鍍 -40- (4) (4)200302537 層、鈾刻、壓紋、切入基板表面、模製或濺鍍其中之一或 多種方法所製得的。 1 〇、如申請專利範圍第9項之探針淸潔裝置,另包含 膠黏性凝膠層與磨蝕表面之交錯區域。 11、如申請專利範圍第1 0項之探針淸潔裝置,其中 ,該膠黏性凝膠層之交錯區域位於磨蝕基板之磨蝕表面上 ’或者該膠黏性凝膠層之父錯區域係局部埋在磨鈾基板內 1 2、如申請專利範圍第2項之探針淸潔裝置,其中, 該磨蝕基板層具有包含樹枝狀圖案磨蝕物之磨蝕表面。 1 3、如申請專利範圍第1 2項之探針淸潔裝置,其中 ,該樹枝狀圖案磨鈾物與磨蝕基板爲相同的材料,該材料 係一^過渡金屬。 1 4、如申請專利範圍第1 3項之探針淸潔裝置,其中 ’該過渡金屬係選自由銅、鎳、鈀、鎢、鍊、鍺與鈷所組 成之群組。 _ 15、如申請專利範圍第14項之探針淸潔裝置,其中 ,過渡金屬係銅。 1 6、如申請專利範圍第14項之探針淸潔裝置,其中 ’該樹枝狀圖案磨鈾物另包含一較硬材料之塗層,其中, S亥塗層具有與該樹枝狀磨蝕物相同的構造。 17、如申請專利範圍第1 6項之探針淸潔裝置,其中 ’該較硬材料係選自碳化鎢、氮化鈦或金剛石。 1 8、如申請專利範圍第1項之探針淸潔裝置,其中, -41 - (5)200302537 式I 1000 D係 R3係 ,R4 該交 ,該 ,式 爲甲 ,該 該交 800 〇 ,T ,R6 之以砂酮爲底的樹脂之ιώ與η的總和係自約1 q至 〇 1 9、如申請專利範圍第1項之探針淸潔裝置,其中, 氧。 20、 如申請專利範圍第1項之探針淸潔裝置,其中, 乙烯基。 21、 如申請專利範圍第2〇項之探針淸潔裝置,其中 與R5的其中一者或二者爲甲基。 22、 如申請專利範圍第1項之探針淸潔裝置,其中, 聯化合物具有式II。 23、 如申請專利範圍第22項之探針淸潔裝置,其中 以矽酮爲底的樹脂具有式I,而且R3係乙烯基。 24、 如申請專利範圍第22項之探針淸潔裝置,其中 I之以砂酬爲底的樹脂之R4與R5的其中—'者或二者 基。 25、 如申請專利範圍第22項之探針淸潔裝置,其中 以矽酮爲底的樹脂具有式I,而D係氧。 26、 如申請專利範圍第1項之探針淸潔裝置,其中, 聯化合物具有式III,而且ρ與q之總和係自約〇至 27、 如申請專利範圍第26項之探針淸潔裝置,其中 係一單鍵。 28、 如申請專利範圍第26項之探針淸潔裝置,其中 、R7、、R9、R10 與 R11 係甲基。 -42- (6) (6)200302537 29、一種用以淸潔探針之末端部分的探針淸潔裝置, 而該探針係用來測試半導體晶圓,該探針淸潔裝置包含: (i ) 一磨蝕基板層;以及 (ii ) 一膠黏性凝膠層,其中,該膠黏性凝膠層 係與該磨蝕基板之磨蝕表面接觸;該膠黏性凝膠層包含: (a ) —種含以矽酮爲底之樹脂的乙烯基矽氧烷,其 黏度係自約2000至10,〇〇〇 cps ;以及 (b ) —種含一交聯化合物的羥矽氧烷,其黏度係自 約2至1〇〇〇 cps,其中,該交聯化合物不包含乙烯基;以 及 (c ) 一種觸媒。 30、如申請專利範圍第29項之探針淸潔裝置,其中 ’該磨蝕基板層係由選自過渡金屬、金屬合金、複合化合 物或天然材料之材料所組成的。 3 1、如申請專利範圍第30項之探針淸潔裝置,其中 ’該磨蝕基板層之磨蝕表面包含呈粉末、粒子、顆粒或結 晶形式之該種材料。 3 2、如申請專利範圍第31項之探針淸潔裝置,其中 ,該磨蝕基板層係同質或異質的。 3 3、如申請專利範圍第29項之探針淸潔裝置,其中 ,該過渡金屬係選自由銅、鎳、紀、鎢、銶、錢與銘所組 成之群組。 34、如申請專利範圍第29項之探針淸潔裝置,其中 ,該金屬合金係選自由鈀/銅、錦/鉻與鈦/鎢所組成之群組 -43- (7) (7)200302537 35 '如申請專利範圍第29項之探針淸潔裝置,其中 ’該胃合化合物係選自由碳化鎢、碳化矽、氮化矽、二氧 ft 0 ' Μ t鋁、氧化鋁、氧化鉻或氮化鈦所組成之群組。 36 '如申請專利範圍第29項之探針淸潔裝置,其中 ’言亥X然材料係選自由矽石、氧化鋁、金剛石或類金剛石 &^所組成之群組。 37 '如申請專利範圍第29項之探針淸潔裝置,其中 ’該磨蝕基板層具有表面磨蝕物,其係由:表面粗糙化、 鍍層、蝕刻、壓紋、切入基板表面、模製或濺鍍其中之一 或多種方法所製得的。 38、 如申請專利範圍第37項之探針淸潔裝置,另包 含膠黏性凝膠層與磨蝕表面之交錯區域。 39、 如申請專利範圍第38項之探針淸潔裝置,其中 ,該膠黏性凝膠層之交錯區域位於磨鈾基板之磨蝕表面上 ,或者該膠黏性凝膠層之交錯區域係局部埋在磨鈾基板內 〇 40、 如申請專利範圍第29項之探針淸潔裝置,其中 ,該磨蝕基板層具有包含樹枝狀圖案磨鈾物之磨鈾表面。 4 1、如申請專利範圍第40項之探針淸潔裝置,其中 ,該樹枝狀圖案磨蝕物與磨鈾基板爲相同的材料’該材料 係一過渡金屬。 42、如申請專利範圍第41項之探針淸潔裝置,其中 ,該過渡金屬係選自由銅、鎳、鈀、鎢、鍊、鍺與鈷所組 -44 - (8) (8)200302537 成之群組。 43、 如申請專利範圍第42項之探針淸潔裝置,其中 ,過渡金屬係銅。 44、 如申請專利範圍第40項之探針淸潔裝置,其中 ,該樹枝狀圖案磨蝕物另包含一較硬材料之塗層,其中, 該塗層具有與該樹枝狀磨鈾物相同的構造。 45、 如申請專利範圍第44項之探針淸潔裝置,其中 ’該較硬材料係選自碳化鎢、氮化鈦或金剛石。 46、 如申請專利範圍第2項之探針淸潔裝置,其中’ 該磨蝕基板層係同質的,而且包含具有磨蝕表面之單一材 料。 47、 如申請專利範圍第46項之探針淸潔裝置,其中 ,將該磨蝕基板施加於保護基板的上面。 48、 如申請專利範圍第2項之探針淸潔裝置,其中’ 該磨蝕基板層係異質的,而且包含: (a)第一層材料,以及 (b )具有磨蝕表面之第二層材料,該材料與第一層 不同。 49、 如申請專利範圍第1項之探針淸潔裝置,其中, 該膠黏性凝膠層具有自動復原性。 50、 如申請專利範圍第29項之探針淸潔裝置,其中 ’該膠黏性凝膠層具有自動復原性。 5 1、如申請專利範圍第 1 項之探針淸潔裝置,其中 ,該膠黏性凝膠層包含自約2.0至5.0重量%之交聯化合 (9) (9)200302537 物。 5 2、如申請專利範圍第5 1項之探針淸潔裝置’其中 ,該膠黏性凝膠層包含自約2.0至3.0重量%之交聯化合 物。 5 3、如申請專利範圍第1項之探針淸潔裝置’其中’ 該觸媒係一種固化觸媒。 54、如申請專利範圍第5 3項之探針淸潔裝置’其中 ,該固化觸媒係一種含鉑觸媒。 ® 5 5、如申請專利範圍第1項之探針淸潔裝置,另包含 一層塗敷於該膠黏性凝膠層表面之可移式保護膜。 5 6、如申請專利範圍第29項之探針淸潔裝置,其中 ,該膠黏性凝膠層包含自約2.0至5.0重量%之交聯化合 物。 57、如申請專利範圍第56項之探針淸潔裝置,其中 ,該膠黏性凝膠層包含自約2.0至3 · 0重量%之交聯化合 物。 ⑩ 5 8、如申請專利範圍第29項之探針淸潔裝置,其中 ,該觸媒係一種固化觸媒。 59、如申請專利範圍第58項之探針淸潔裝置,其中 ,該固化觸媒係一種含鉑觸媒。 6 0、如申請專利範圍第2 9項之探針淸潔裝置,另包 含一層塗敷於該膠黏性凝膠層表面之可移式保護膜。 6 1、一種全套工具,其包含如申請專利範圍第1項之 探針淸潔裝置,以及一探針卡。 -46- (10)200302537 62、一種全套工具,其包含如申請專利範圍第29項 之探針淸潔裝置,以及一探針卡。Where = R6, R7, R8, R9, R〗. And R11 are each selected from the group consisting of ammonia, Cl-2 0 alkyl, Cm haloalkyl, phenyl, or alkyl phenyl; P and 0 are each an integer from 0 to 800; T is selected from a single bond, -(CHO, CH2- '-(CH2) rCH2〇- or RI ——Si-〇 一 「丨 1 〇I Me Si--Me 〇I Me-Si-Me I Me Where t is from 0 to 10 The integer 'R is selected from Cl-2. Academic base, Cl-2. Haloalkyl, phenyl, or Cmoalkylphenyl; and s is an integer from 0 to 800; and (C) a catalyst; further, wherein : -39- (3) (3) 200302537 The chain length of the polysilicone-based resin defined by the sum of m and η 値 in formula I is greater than the sum of m 'and η' 値 in formula II or formula II The chain length of the cross-linked compound defined by the sum of p, q, and s. 2. The probe cleaning device according to item 1 of the patent application scope, wherein the abrasive substrate layer is selected from transition metals, metal alloys, Composite compounds or materials made of natural materials. 3. The probe cleaning device of item 2 of the patent application scope, wherein the abrasive surface of the abrasive substrate layer includes powder, particles, particles or crystals. 4. The probe cleaning device according to item 3 of the patent application, wherein the abrasive substrate layer is homogeneous or heterogeneous. 5. The probe cleaning device according to item 2 of the patent application, wherein, the The transition metal is selected from the group consisting of copper, nickel, palladium, tungsten, rhenium, rhodium and cobalt. 6. The probe cleaning device according to item 2 of the patent application scope, wherein the metal alloy is selected from the group consisting of palladium / A group consisting of copper, molybdenum / chromium and titanium / tungsten. 7. The probe cleaning device such as the second item of the patent application scope, wherein the composite compound is selected from the group consisting of tungsten carbide, silicon carbide, silicon nitride, A group consisting of silicon oxide, aluminum nitride, aluminum oxide, chromium oxide or titanium nitride. 8. The probe cleaning device according to item 2 of the patent application scope, wherein the natural material is selected from silica, oxide A group consisting of aluminum, diamond, or diamond-like carbon. 9. The probe cleaning device according to item 2 of the scope of patent application, wherein the abrasive substrate layer has surface abrasions, which are: 40- (4) (4) 200302537 layer, uranium engraving, embossing It is made by one or more of the methods of cutting into the surface of the substrate, molding or sputtering. 10. The probe cleaning device according to item 9 of the patent application scope, further comprising a staggered adhesive gel layer and an abrasive surface. 11. The probe cleaning device according to item 10 of the patent application range, wherein the staggered area of the adhesive gel layer is located on the abrasive surface of the abrasive substrate 'or the parent fault of the adhesive gel layer The area is partially buried in the ground uranium substrate 1 2. The probe cleaning device according to item 2 of the patent application scope, wherein the ground substrate layer has an abrasive surface containing dendritic pattern abrasives. 1 3. The probe cleaning device according to item 12 of the application, wherein the dendritic pattern grinding uranium is the same material as the abrasive substrate, and the material is a transition metal. 14. The probe cleaning device according to item 13 of the patent application scope, wherein the transition metal is selected from the group consisting of copper, nickel, palladium, tungsten, chain, germanium, and cobalt. _ 15, such as the probe cleaning device of the scope of application for patent No. 14, in which the transition metal is copper. 16. The probe cleaning device according to item 14 of the scope of application for patent, wherein 'the dendritic pattern grinding uranium substance further comprises a coating of a harder material, wherein the Shai coating has the same structure as the dendritic abrasive substance. The construction. 17. The probe cleaning device according to item 16 of the application, wherein ‘the harder material is selected from tungsten carbide, titanium nitride or diamond. 18. The probe cleaning device according to item 1 of the scope of patent application, in which, -41-(5) 200302537 Formula I 1000 D is R3, R4 should be transferred, the formula is A, and the transfer is 800. The total sum of T and R6 resins based on ketone ketones and η is from about 1 q to 〇9, such as the probe cleaning device of the first scope of the patent application, wherein, oxygen. 20. The probe cleaning device according to item 1 of the scope of patent application, in which vinyl is used. 21. The probe cleaning device such as the scope of application for patent No. 20, in which one or both of R5 and R5 is a methyl group. 22. The probe cleaning device according to item 1 of the patent application scope, wherein the compound has formula II. 23. The probe cleaning device according to item 22 of the application, wherein the silicone-based resin has Formula I and R3 is a vinyl group. 24. For example, the probe cleaning device of the scope of application for patent No. 22, wherein I is one of R4 and R5 of resin based on sand, or both. 25. The probe cleaning device according to item 22 of the application, wherein the silicone-based resin has formula I and D is oxygen. 26. For example, the probe cleaning device according to item 1 of the patent application, wherein the compound has formula III, and the sum of ρ and q is from about 0 to 27. For example, the probe cleaning device according to item 26 of the patent application , Which is a single bond. 28. For example, the probe cleaning device of the scope of application for patent No. 26, wherein R7, R9, R10, R10 and R11 are methyl groups. -42- (6) (6) 200302537 29. A probe cleaning device for cleaning the end portion of a probe, and the probe is used to test a semiconductor wafer. The probe cleaning device includes: ( i) an abrasive substrate layer; and (ii) an adhesive gel layer, wherein the adhesive gel layer is in contact with the abrasive surface of the abrasive substrate; the adhesive gel layer includes: (a) -A kind of vinyl siloxane containing a silicone-based resin, the viscosity of which is from about 2000 to 10,000 cps; and (b)-a kind of hydroxy siloxane containing a cross-linking compound, the viscosity It is from about 2 to 1000 cps, wherein the cross-linking compound does not contain a vinyl group; and (c) a catalyst. 30. The probe cleaning device according to item 29 of the application, wherein the abrasive substrate layer is composed of a material selected from transition metals, metal alloys, composite compounds, or natural materials. 3 1. The probe cleaning device according to item 30 of the patent application scope, wherein the abrasive surface of the abrasive substrate layer includes the material in the form of powder, particles, granules or crystals. 3 2. The probe cleaning device according to item 31 of the patent application scope, wherein the abrasive substrate layer is homogeneous or heterogeneous. 3 3. The probe cleaning device according to item 29 of the patent application scope, wherein the transition metal is selected from the group consisting of copper, nickel, metal, tungsten, rhenium, money, and Ming. 34. The probe cleaning device according to item 29 of the application for a patent, wherein the metal alloy is selected from the group consisting of palladium / copper, brocade / chromium and titanium / tungsten-43- (7) (7) 200302537 35 'The probe cleaning device according to item 29 of the patent application range, wherein' the gastrointestinal compound is selected from the group consisting of tungsten carbide, silicon carbide, silicon nitride, dioxin ft 0 'Mt aluminum, alumina, chromium oxide or A group of titanium nitride. 36 'The probe cleaning device according to item 29 of the patent application range, wherein the material is selected from the group consisting of silica, alumina, diamond, or diamond-like carbon. 37 'The probe cleaning device according to item 29 of the patent application scope, wherein' the abraded substrate layer has a surface abrasion substance, which is composed of: surface roughening, plating, etching, embossing, cutting into the substrate surface, molding or sputtering Prepared by one or more of these methods. 38. If the probe cleaning device according to item 37 of the patent application scope, it also contains the staggered area of the adhesive gel layer and the abrasive surface. 39. The probe cleaning device according to item 38 of the application, wherein the staggered area of the adhesive gel layer is located on the abrasive surface of the ground uranium substrate, or the staggered area of the adhesive gel layer is local The probe cleaning device buried in the ground uranium substrate 40, such as the 29th scope of the patent application, wherein the ground substrate layer has a ground uranium surface including a dendritic pattern ground uranium. 4 1. The probe cleaning device according to item 40 of the patent application scope, wherein the dendritic pattern abrasive is the same material as the ground uranium substrate. The material is a transition metal. 42. The probe cleaning device according to item 41 of the application for a patent, wherein the transition metal is selected from the group consisting of copper, nickel, palladium, tungsten, chain, germanium, and cobalt -44-(8) (8) 200302537 Group. 43. The probe cleaning device according to item 42 of the patent application, wherein the transition metal is copper. 44. For example, the probe cleaning device of the scope of application for patent No. 40, wherein the dendritic pattern abrasive article further comprises a coating of a harder material, wherein the coating layer has the same structure as the dendritic abrasive article. . 45. The probe cleaning device according to item 44 of the application, wherein ‘the harder material is selected from tungsten carbide, titanium nitride or diamond. 46. The probe cleaning device according to item 2 of the application, wherein the abrasive substrate layer is homogeneous and contains a single material having an abrasive surface. 47. The probe cleaning device according to item 46 of the application for a patent, wherein the abrasive substrate is applied on the protective substrate. 48. The probe cleaning device according to item 2 of the patent application scope, wherein the abrasive substrate layer is heterogeneous and includes: (a) a first layer of material, and (b) a second layer of material having an abrasive surface, This material is different from the first layer. 49. The probe cleaning device according to item 1 of the patent application scope, wherein the adhesive gel layer has auto-recoverability. 50. The probe cleaning device according to item 29 of the patent application scope, wherein the adhesive gel layer has an auto-recovery property. 5 1. The probe cleaning device according to item 1 of the scope of patent application, wherein the adhesive gel layer comprises from about 2.0 to 5.0% by weight of a crosslinked compound (9) (9) 200302537. 5 2. The probe cleaning device according to item 51 of the application for a patent, wherein the adhesive gel layer comprises from about 2.0 to 3.0% by weight of a cross-linked compound. 5 3. The probe cleaning device according to item 1 of the scope of the patent application, wherein the catalyst is a curing catalyst. 54. The probe cleaning device according to item 53 of the patent application scope, wherein the curing catalyst is a platinum-containing catalyst. ® 5 5. If the probe cleaning device of item 1 of the patent application scope, it also includes a removable protective film coated on the surface of the adhesive gel layer. 56. The probe cleaning device of claim 29, wherein the adhesive gel layer comprises from about 2.0 to 5.0% by weight of a crosslinked compound. 57. The probe cleaning device according to item 56 of the application, wherein the adhesive gel layer comprises from about 2.0 to 3.0% by weight of a cross-linked compound. ⑩ 5 8. The probe cleaning device according to item 29 of the patent application scope, wherein the catalyst is a curing catalyst. 59. The probe cleaning device according to item 58 of the application, wherein the curing catalyst is a platinum-containing catalyst. 60. The probe cleaning device according to item 29 of the patent application scope further comprises a removable protective film coated on the surface of the adhesive gel layer. 6 1. A complete set of tools, including a probe cleaning device as described in the first patent application scope, and a probe card. -46- (10) 200302537 62. A complete set of tools, including a probe cleaning device such as item 29 of the patent application scope, and a probe card. -47--47-
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114414862A (en) * 2020-11-28 2022-04-29 法特迪精密科技(苏州)有限公司 Viscous adsorption method for test probe cleaning method

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7182672B2 (en) * 2001-08-02 2007-02-27 Sv Probe Pte. Ltd. Method of probe tip shaping and cleaning
US6817052B2 (en) * 2001-11-09 2004-11-16 Formfactor, Inc. Apparatuses and methods for cleaning test probes
US6813804B2 (en) * 2002-06-06 2004-11-09 Samsung Electronics Co., Ltd. Apparatus and method for cleaning probe card contacts
EP1441231A1 (en) * 2003-01-14 2004-07-28 Wentworth Laboratories, Inc. Probe pin cleaning system and method
JP4565813B2 (en) * 2003-05-13 2010-10-20 日本電子材料株式会社 Probe tip cleaning member
US20070046314A1 (en) * 2004-07-21 2007-03-01 Advanced Semiconductor Engineering, Inc. Process for testing IC wafer
US9833818B2 (en) 2004-09-28 2017-12-05 International Test Solutions, Inc. Working surface cleaning system and method
JP2006165395A (en) * 2004-12-09 2006-06-22 Jsr Corp Probe-cleaning film and probe-cleaning member
US7784146B2 (en) * 2006-01-09 2010-08-31 International Business Machines Corporation Probe tip cleaning apparatus and method of use
JP2008281413A (en) * 2007-05-10 2008-11-20 Micronics Japan Co Ltd Cleaning device for probe
US10618080B2 (en) 2007-09-17 2020-04-14 Bruker Nano, Inc. Debris removal from high aspect structures
US10384238B2 (en) 2007-09-17 2019-08-20 Rave Llc Debris removal in high aspect structures
US8287653B2 (en) * 2007-09-17 2012-10-16 Rave, Llc Debris removal in high aspect structures
US10330581B2 (en) 2007-09-17 2019-06-25 Rave Llc Debris removal from high aspect structures
SG175129A1 (en) 2009-04-14 2011-11-28 Internat Test Solutions Wafer manufacturing cleaning apparatus, process and method of use
JP2012198024A (en) * 2009-07-31 2012-10-18 Wit Co Ltd Cleaning pad for test probe and method for cleaning test probe
US8371316B2 (en) * 2009-12-03 2013-02-12 International Test Solutions, Inc. Apparatuses, device, and methods for cleaning tester interface contact elements and support hardware
JP5675472B2 (en) * 2011-04-11 2015-02-25 日東電工株式会社 Cleaning sheet, cleaning member, cleaning method, and continuity inspection device
US9229029B2 (en) 2011-11-29 2016-01-05 Formfactor, Inc. Hybrid electrical contactor
US8928325B2 (en) * 2011-12-08 2015-01-06 Savannah River Nuclear Solutions, Llc Identification of elemental mercury in the subsurface
DE102014103262B3 (en) * 2014-03-11 2015-06-11 Multitest Elektronische Systeme Gmbh Device for testing electronic components
TWI829197B (en) * 2016-05-20 2024-01-11 美商瑞弗股份有限公司 Nano-scale metrology systems
US9825000B1 (en) 2017-04-24 2017-11-21 International Test Solutions, Inc. Semiconductor wire bonding machine cleaning device and method
CN108181568B (en) * 2018-01-11 2021-04-06 上海华虹宏力半导体制造有限公司 Wafer test protection pad and test method
CN112313018B (en) 2018-02-23 2023-05-30 国际测试技术有限责任公司 Novel materials and hardware for automatically cleaning flexible electronic web rolls
US11099212B2 (en) * 2018-03-12 2021-08-24 Aculon Inc. Method for cleaning and coating a tip of a test probe utilized in a test system for an integrated circuit package
US10627426B2 (en) * 2018-03-12 2020-04-21 Aculon Inc. Method and kit for cleaning and coating a tip of a test probe utilized in a test system for an integrated circuit package
AT521098B1 (en) * 2018-04-09 2022-07-15 Gaggl Dr Rainer Method of cleaning the needle tips of the needles of probe cards
US11756811B2 (en) 2019-07-02 2023-09-12 International Test Solutions, Llc Pick and place machine cleaning system and method
US10792713B1 (en) 2019-07-02 2020-10-06 International Test Solutions, Inc. Pick and place machine cleaning system and method
US11865588B2 (en) * 2019-11-12 2024-01-09 Alliance Material Co., Ltd. Probe pin cleaning pad and cleaning method for probe pin
US11211242B2 (en) 2019-11-14 2021-12-28 International Test Solutions, Llc System and method for cleaning contact elements and support hardware using functionalized surface microfeatures
US11318550B2 (en) 2019-11-14 2022-05-03 International Test Solutions, Llc System and method for cleaning wire bonding machines using functionalized surface microfeatures
JP7503915B2 (en) 2020-02-28 2024-06-21 富士紡ホールディングス株式会社 Cleaning Sheet
US11035898B1 (en) 2020-05-11 2021-06-15 International Test Solutions, Inc. Device and method for thermal stabilization of probe elements using a heat conducting wafer
DE102021201669B4 (en) * 2021-02-22 2023-08-17 Carl Zeiss Smt Gmbh METHOD AND DEVICE FOR PROCESSING A SAMPLE

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3020260A (en) * 1960-08-18 1962-02-06 Dow Corning Organosiloxane potting compound
US4778326A (en) 1983-05-24 1988-10-18 Vichem Corporation Method and means for handling semiconductor and similar electronic devices
US5917707A (en) 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US5476211A (en) 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US4757255A (en) 1986-03-03 1988-07-12 National Semiconductor Corporation Environmental box for automated wafer probing
GB2192142B (en) * 1986-07-04 1990-11-28 Johnson & Johnson Wound dressing
US4774111A (en) * 1987-06-29 1988-09-27 Dow Corning Corporation Heat-curable silicone compositions comprising fumarate cure-control additive and use thereof
US5198752A (en) 1987-09-02 1993-03-30 Tokyo Electron Limited Electric probing-test machine having a cooling system
FR2624874B1 (en) * 1987-12-18 1990-06-08 Dow Corning Sa GELIFIABLE COMPOSITION BASED ON ORGANOSILOXANES, GEL PRODUCED FROM THIS COMPOSITION, AND DRESSING AND PROSTHESIS CONTAINING THIS GEL
FR2633400B1 (en) 1988-06-24 1990-11-09 Labo Electronique Physique AUTOMATIC INTEGRATED CIRCUIT CONTROL SYSTEM
US5198753A (en) 1990-06-29 1993-03-30 Digital Equipment Corporation Integrated circuit test fixture and method
JPH04364746A (en) * 1991-06-12 1992-12-17 Tokyo Electron Yamanashi Kk Probe apparatus
JPH0653299A (en) 1992-07-31 1994-02-25 Tokyo Electron Yamanashi Kk Burn-in apparatus
US6336269B1 (en) 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6184053B1 (en) 1993-11-16 2001-02-06 Formfactor, Inc. Method of making microelectronic spring contact elements
AU4283996A (en) 1994-11-15 1996-06-19 Formfactor, Inc. Electrical contact structures from flexible wire
US5834946A (en) 1995-10-19 1998-11-10 Mosaid Technologies Incorporated Integrated circuit test head
US5690749A (en) 1996-03-18 1997-11-25 Motorola, Inc. Method for removing sub-micron particles from a semiconductor wafer surface by exposing the wafer surface to clean room adhesive tape material
TW377482B (en) * 1997-04-08 1999-12-21 Tokyo Electron Ltd Cleaner with protuberances for inspection, inspection apparatus and inspection method for integrated circuits
JP3388271B2 (en) 1997-05-19 2003-03-17 東京エレクトロン株式会社 Probe device
JPH1187438A (en) 1997-09-03 1999-03-30 Mitsubishi Electric Corp Member and method for cleaning of probe tip, and test method for semiconductor wafer
EP0955347B1 (en) * 1998-05-06 2011-08-31 Dow Corning France S.A. Method for adhering substrates using adhesive devices containing silicone gels
US6140616A (en) 1998-09-25 2000-10-31 Aehr Test Systems Wafer level burn-in and test thermal chuck and method
TW589453B (en) 1998-12-02 2004-06-01 Formfactor Inc Lithographic contact elements
US6255126B1 (en) 1998-12-02 2001-07-03 Formfactor, Inc. Lithographic contact elements
US6777966B1 (en) 1999-07-30 2004-08-17 International Test Solutions, Inc. Cleaning system, device and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114414862A (en) * 2020-11-28 2022-04-29 法特迪精密科技(苏州)有限公司 Viscous adsorption method for test probe cleaning method
CN114414862B (en) * 2020-11-28 2023-03-14 法特迪精密科技(苏州)有限公司 Viscous adsorption method for test probe cleaning method

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