TW198073B - - Google Patents
Info
- Publication number
- TW198073B TW198073B TW081102015A TW81102015A TW198073B TW 198073 B TW198073 B TW 198073B TW 081102015 A TW081102015 A TW 081102015A TW 81102015 A TW81102015 A TW 81102015A TW 198073 B TW198073 B TW 198073B
- Authority
- TW
- Taiwan
- Prior art keywords
- crystallinity
- improve
- index
- performance
- thermal
- Prior art date
Links
- 239000013078 crystal Substances 0.000 abstract 2
- 239000012528 membrane Substances 0.000 abstract 2
- PEEDYJQEMCKDDX-UHFFFAOYSA-N antimony bismuth Chemical compound [Sb].[Bi] PEEDYJQEMCKDDX-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3078556A JP2786751B2 (ja) | 1991-03-18 | 1991-03-18 | 電子冷却材料及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW198073B true TW198073B (zh) | 1993-01-11 |
Family
ID=13665189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW081102015A TW198073B (zh) | 1991-03-18 | 1992-03-17 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5292376A (zh) |
JP (1) | JP2786751B2 (zh) |
KR (1) | KR950014615B1 (zh) |
DE (1) | DE4208692C2 (zh) |
GB (1) | GB2253942B (zh) |
TW (1) | TW198073B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070101737A1 (en) * | 2005-11-09 | 2007-05-10 | Masao Akei | Refrigeration system including thermoelectric heat recovery and actuation |
US7310953B2 (en) * | 2005-11-09 | 2007-12-25 | Emerson Climate Technologies, Inc. | Refrigeration system including thermoelectric module |
CN102251283B (zh) * | 2011-07-12 | 2013-02-20 | 河南大学 | 一种高热电优值单晶锑化锌纳米梳子及其制备方法 |
US9557243B2 (en) | 2012-03-14 | 2017-01-31 | Axonoptics Llc | Integrated optics reflectometer |
US9222850B2 (en) * | 2013-03-14 | 2015-12-29 | Axonoptics, Llc | Integrated optics reflectometer |
CN110220937B (zh) * | 2019-06-14 | 2020-11-24 | 华中科技大学 | 一种热电制冷模块寿命预测方法及装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL270368A (zh) * | 1960-11-16 | |||
NL289145A (zh) * | 1962-03-22 | |||
DE1276331B (de) * | 1963-11-21 | 1968-08-29 | Gen Electric | Verfahren zur Herstellung eines homogenen halbleitenden Einkristalls |
JPS59145582A (ja) * | 1983-02-09 | 1984-08-21 | Futaba Corp | 鉄けい化物熱電変換素子 |
-
1991
- 1991-03-18 JP JP3078556A patent/JP2786751B2/ja not_active Expired - Lifetime
-
1992
- 1992-03-17 TW TW081102015A patent/TW198073B/zh active
- 1992-03-18 DE DE4208692A patent/DE4208692C2/de not_active Expired - Fee Related
- 1992-03-18 GB GB9205931A patent/GB2253942B/en not_active Expired - Fee Related
- 1992-03-18 US US07/853,127 patent/US5292376A/en not_active Expired - Fee Related
- 1992-03-18 KR KR1019920004490A patent/KR950014615B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB9205931D0 (en) | 1992-04-29 |
KR950014615B1 (ko) | 1995-12-11 |
GB2253942A (en) | 1992-09-23 |
JP2786751B2 (ja) | 1998-08-13 |
KR920018995A (ko) | 1992-10-22 |
DE4208692C2 (de) | 1994-02-10 |
DE4208692A1 (de) | 1992-09-24 |
JPH04288857A (ja) | 1992-10-13 |
US5292376A (en) | 1994-03-08 |
GB2253942B (en) | 1994-12-14 |
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