SU957758A3 - Process for producing silicon dioxide - Google Patents

Process for producing silicon dioxide Download PDF

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Publication number
SU957758A3
SU957758A3 SU752182607A SU2182607A SU957758A3 SU 957758 A3 SU957758 A3 SU 957758A3 SU 752182607 A SU752182607 A SU 752182607A SU 2182607 A SU2182607 A SU 2182607A SU 957758 A3 SU957758 A3 SU 957758A3
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USSR - Soviet Union
Prior art keywords
hydrogen
reaction
flame
oxygen
silicon dioxide
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SU752182607A
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Russian (ru)
Inventor
Хекель Эмиль
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Дегусса (Фирма)
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14Methods for preparing oxides or hydroxides in general
    • C01B13/20Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state
    • C01B13/22Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state of halides or oxyhalides
    • C01B13/30Removal and cooling of the oxide-containing suspension
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00Compounds of aluminium
    • C01F7/02Aluminium oxide; Aluminium hydroxide; Aluminates
    • C01F7/30Preparation of aluminium oxide or hydroxide by thermal decomposition or by hydrolysis or oxidation of aluminium compounds
    • C01F7/302Hydrolysis or oxidation of gaseous aluminium compounds in the gaseous phase
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00Compounds of titanium
    • C01G23/04Oxides; Hydroxides
    • C01G23/047Titanium dioxide
    • C01G23/07Producing by vapour phase processes, e.g. halide oxidation
    • C01G23/075Evacuation and cooling of the gaseous suspension containing the oxide; Desacidification and elimination of gases occluded in the separated oxide
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/12Surface area

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Geology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Silicon Compounds (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Investigating And Analyzing Materials By Characteristic Methods (AREA)

Abstract

1513890 Finely divided oxides of metals and/or silicon DEUTSCHE GOLDUND SILBERSCHEIDEANSTALT 22 Oct 1975 [30 July 1975] 43314/75 Heading C1A A process for the production of finely divided oxides of metals (Ti and Al are specified) and/or silicon by the hydrolytic reaction of a volatile chloride thereof in a flame comprises feeding the chlorides in a mixture with hydrogen and with air or oxygen to a flame burning from a burner in a reaction chamber, reacting them in the flame, keeping the burner mouth free by passing hydrogen thereover, passing the oxide aerosol thus formed together with through a subsequent cooling system and separating the oxide from the process gases in a separation apparatus, chlorine formed in the flame reaction being reduced with hydrogen during cooling of the reaction gases to a temperature below the reaction temperature of the hydrogen with the oxygen in the reaction gas.

Description

Изобретение относитс  к способу получени  высокодисперсного диоксида кремни , используемого в различных област х техники. Известен способ получени  диоксид кремни  путем высокотемпературного гидролиза-хлорида кремни  в среде кислорода и горючих газов, охлаждени газообразных продуктов гидролиза и последующего выделени  высокодисперс ного диоксида кремни  с размером час тиц 10-20 мм. Благодар проведению гидролизав атмосфере азота устран ю образование .свободного хлора Щ . Недостатком этого способа  вл етс  повышенный расход реагентов за счет проведени  гидролиза в атмосфере азота. Известен способ 2 получени  диоксида кремни  путем высокотемпературного гидролиза хлоридакремни  в среде, состо щей из водород- и кисло родсодержащих газов, охлаждени  газо юбразн.ых продуктов, обработки их вод ным паром и затем азотом и с после дующим отделением диоксида кремни . Получают высокодисперсный продукт с удельной поверхностью 200 и содержанием свободного хлора О,1 вес.% Недостатками известного способа  вл етс  использование азота и повышенное содержание свободного хлора в продукте. Цель изобретени  - снижение содержани  хлора в продукте и упрощение способа за счет исключени  введени  в Процесс азота. Поставленна  цель достигаетс  тем , что в известном спосЪбе получени  диоксида кремни ,, заключающимс  в высокотемпературном гидролизе хлорида кремни  в среде водород- кислородсодержащих газов, охлаждении газообразных продуктов реакции с последующим отделением диоксида кремни -, перед отделением диоксида кремни  газообразные продукты гидролиза охлаждают до 500-650 0 и обрабатывают их водородом. Отличные от прототипа температурный режим охлаждени  и операци  обработки газообразных продуктов водородом позвол ют снизить содержание свободного хлора в продукте до 0,07% и получить высокодисперсный продукт с удельной поверхностью 200 Mvr. Кроме того, способ позвол ет утилизировать хлористый водород с получением концентрированной сол ми кислоты.This invention relates to a process for the preparation of highly dispersed silicon dioxide used in various fields of technology. A known method for producing silicon dioxide by high-temperature hydrolysis-of silicon chloride in an environment of oxygen and combustible gases, cooling the gaseous hydrolysis products and the subsequent separation of highly dispersed silicon dioxide with a particle size of 10-20 mm. By carrying out the hydrolysis in a nitrogen atmosphere, the formation of free chlorine is eliminated. The disadvantage of this method is the increased consumption of reagents due to hydrolysis under nitrogen. Known method 2 is the production of silicon dioxide by high-temperature hydrolysis of chloride silicon in a medium consisting of hydrogen- and oxygen-containing gases, cooling gas-gas products, treating them with water vapor and then with nitrogen and followed by the separation of silica. A highly dispersed product is obtained with a specific surface of 200 and a content of free chlorine of O, 1 wt.%. The disadvantages of this method are the use of nitrogen and the increased content of free chlorine in the product. The purpose of the invention is to reduce the chlorine content in the product and simplify the process by eliminating the introduction of nitrogen into the process. The goal is achieved by the fact that in the known method of producing silicon dioxide, which consists in high-temperature hydrolysis of silicon chloride in hydrogen-oxygen-containing gases, cooling the gaseous reaction products with subsequent separation of silicon dioxide, before the separation of silicon dioxide, the gaseous hydrolysis products are cooled to 500-650 0 and treat them with hydrogen. The temperature mode of cooling, which differs from the prototype, and the operation of treating gaseous products with hydrogen reduce the chlorine content in the product to 0.07% and obtain a highly dispersed product with a specific surface of 200 Mvr. Furthermore, the method allows utilization of hydrogen chloride to produce concentrated salts of the acid.

При температуре ниже скорость восстановлени  хлора водородом невысока , а содержание хлора в продукте повышенное - 6,7%, При температуре свыше расход водорода повышенный вследствие его взаимодействи  с 5 кислородом, а содержание хлора в продукте не уменьшаетс . Взаимодействие в газообразных продуктах реакции хло7 ра с водородом целесообразно вести под действием ультрафиолетового света.10At a temperature below, the rate of reduction of chlorine with hydrogen is low, and the chlorine content in the product is elevated - 6.7%. At a temperature above, the hydrogen consumption is increased due to its interaction with 5 oxygen, and the chlorine content in the product does not decrease. The interaction in the gaseous products of the reaction of chlorine with hydrogen should be carried out under the action of ultraviolet light.

Пример. 2.000 кг С1, 648 водорода и 1.900 нм/ч воздуха подают в аэрозольную горелку. 22 водорода подают в кожух горелки. Получают 706 кг/ч высокодис- з персной кремневой кислоты с удельной поверхностью 200 . Количество свободного хлора в реакционном газе 7,5%. Реакционный газ охлаждают до и ввод т в него 70 водорода. .jn Количество свободногоicJlOij снижаетс  до 0,07%. Затем,рр }}/:ченную чонкодисперсную SiOj отдел ютЧЬт .реакцион-. ного газа. .%« Example. 2,000 kg of C1, 648 of hydrogen and 1.900 nm / h of air are fed to the aerosol burner. 22 hydrogen is fed to the burner housing. 706 kg / h of highly dispersed persistent silicic acid with a specific surface of 200 are obtained. The amount of free chlorine in the reaction gas is 7.5%. The reaction gas is cooled before and 70 hydrogen are introduced into it. .jn The amount of freeJlOij is reduced to 0.07%. Then, pp}} /: the finely dispersed SiOj is separated by the reaction. foot gas. .% "

П р и м ер, г.. Осуществл ют процесс аналогично пример} 1. бСГнм/ч водорода втвод т в охлщдвнные до 460°С реакционные газы. Количество свободного хлора при этом снижаетс  с 7,5 до 6,7%.Example # 1. The process is carried out in a similar manner to Example} 1. b BCG / m of hydrogen is introduced into the reaction gases cooled to 460 ° C. The amount of free chlorine in this case decreases from 7.5 to 6.7%.

Пример 3. Осуществл ют про- цесс аналогично примеру 1, за исклюieHHeM того, что после проведени  химического превращени  70 водорода ввод т в охлажденные до бво-с реакционные газы. Количество свободного хлора остаетс  неизменным.Example 3. The process is carried out analogously to Example 1, except for the HHeM that after carrying out the chemical transformation 70 hydrogen is introduced into the reaction gases cooled to bWo. The amount of free chlorine remains unchanged.

Предложенный способ позвол ет упростить процесс за счет исключени  расхода дополнительных реагентов (вод ной пар, азот).The proposed method allows to simplify the process by eliminating the consumption of additional reagents (water vapor, nitrogen).

Claims (2)

Формула изобретени Invention Formula Способ получени  диоксида кремни  путем высокотемпературного гидролиза в среде водород- и кислородсодержащих газов, охлаждени  газообразных продуктов гидролиза с последующим отделением продукта,отличающ и.й с   тем,- что, с целью снижени  содержани  хлора в продукте и упрощени  способа, перед, отделением диоксида кремни  газообразные продукты охлсшдают до 500-650°С, а затем их обрабатывают водородом.The method of obtaining silicon dioxide by high-temperature hydrolysis in the environment of hydrogen- and oxygen-containing gases, cooling the gaseous hydrolysis products followed by separation of the product, characterized by the fact that, in order to reduce the chlorine content in the product and simplify the process, before gaseous products are cooled to 500-650 ° C, and then they are treated with hydrogen. Источники информации, прин тые во внимание при экспертизеSources of information taken into account in the examination .1. Патент ФРГ 1210421, кл. 12 G 5/01, опублик. 1966 р..one. Patent of Germany 1210421, cl. 12 G 5/01, publ. 1966 p. 2. Неакцептованна  за вка ФРГ № 2153671, кл. 12 N 1/02, опублик, 1973.2. Unaccepted application for Germany No. 2153671, cl. 12 N 1/02, published, 1973.
SU752182607A 1975-07-30 1975-10-23 Process for producing silicon dioxide SU957758A3 (en)

Applications Claiming Priority (1)

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DE2533925A DE2533925C3 (en) 1975-07-30 1975-07-30 Process for the production of finely divided oxides of metals and / or silicon

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SU957758A3 true SU957758A3 (en) 1982-09-07

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US (1) US4276274A (en)
JP (1) JPS5216497A (en)
AT (1) AT339866B (en)
BE (1) BE834651A (en)
CH (1) CH615892A5 (en)
DE (1) DE2533925C3 (en)
DK (1) DK145890C (en)
FI (1) FI61854C (en)
FR (1) FR2319575A1 (en)
GB (1) GB1513890A (en)
IT (1) IT1047224B (en)
NL (1) NL180199C (en)
NO (1) NO138996C (en)
SE (1) SE410963B (en)
SU (1) SU957758A3 (en)

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DE2923064A1 (en) * 1979-06-07 1980-12-11 Degussa METHOD FOR PRODUCING FINE-PARTICLE OXIDES OF METALS
DE2923182A1 (en) * 1979-06-08 1980-12-18 Degussa METHOD FOR THE PYROGENIC PRODUCTION OF FINE-PARTICLE OXIDE OF A MATAL AND / OR A METALOID
DE2931585A1 (en) * 1979-08-03 1981-02-12 Degussa TEMPERATURE-STABILIZED, PYROGEN-PRODUCED ALUMINUM OXIDE MIXED OXIDE, THE METHOD FOR THE PRODUCTION AND USE THEREOF
DE3101720C2 (en) * 1981-01-21 1982-11-04 Degussa Ag, 6000 Frankfurt Process for removing halogen from the reaction gases in the pyrogenic production of silicon dioxide
US4801437A (en) * 1985-12-04 1989-01-31 Japan Oxygen Co., Ltd. Process for treating combustible exhaust gases containing silane and the like
DE3611449A1 (en) * 1986-04-05 1987-10-15 Degussa BASIC MATERIAL FOR THE PRODUCTION OF CERAMIC MATERIALS
US4710369A (en) * 1986-06-10 1987-12-01 Toth Aluminum Corporation Oxidation method for production of special aluminas from pure aluminum chloride
US5123836A (en) * 1988-07-29 1992-06-23 Chiyoda Corporation Method for the combustion treatment of toxic gas-containing waste gas
DE4228711A1 (en) * 1992-08-28 1994-03-03 Degussa Silicon-aluminum mixed oxide
US6193795B1 (en) 1993-08-02 2001-02-27 Degussa Corporation Low structure pyrogenic hydrophilic and hydrophobic metallic oxides, production and use
DE19813971B4 (en) * 1998-03-24 2005-12-01 Heraeus Quarzglas Gmbh & Co. Kg Process for the cleaning of SiO2 granulation
US6887566B1 (en) 1999-11-17 2005-05-03 Cabot Corporation Ceria composition and process for preparing same
CA3030383C (en) 2016-07-29 2023-02-21 Evonik Degussa Gmbh Method for producing hydrophobic heat insulation material
WO2018134275A1 (en) 2017-01-18 2018-07-26 Evonik Degussa Gmbh Granular thermal insulation material and method for producing the same
DE102017209782A1 (en) 2017-06-09 2018-12-13 Evonik Degussa Gmbh Process for thermal insulation of an evacuable container
EP3597615A1 (en) 2018-07-17 2020-01-22 Evonik Operations GmbH Granular mixed oxide material and thermal insulating composition on its basis
KR102576553B1 (en) 2018-07-18 2023-09-08 에보니크 오퍼레이션즈 게엠베하 Method for hydrophobizing insulating-material molded bodies based on silica at ambient pressure
US20230002627A1 (en) 2020-01-14 2023-01-05 Evonik Operations Gmbh Silica-based hydrophobic granular material with an increased polarity
PL3877332T3 (en) 2020-01-14 2022-07-11 Evonik Operations Gmbh Fumed silica with modified surface activity
EP4043398B1 (en) 2021-02-11 2023-06-28 Evonik Operations GmbH Silica with reduced tribo-charge for toner applications
CN116067191B (en) * 2023-04-06 2023-06-23 河北鸿科碳素有限公司 Flue gas cooler of calciner

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US3078148A (en) * 1961-05-26 1963-02-19 Cabot Corp Process for making titanium dioxide
GB1121279A (en) * 1965-07-28 1968-07-24 Degussa A process for the production of ultra-finely divided oxides
DE1667448A1 (en) * 1966-03-30 1971-06-16 Dschagatspanian Rafael Watscha Process for purifying chlorine from hydrogen
BE790704A (en) * 1971-10-28 1973-02-15 Degussa PROCESS FOR THE MANUFACTURE OF OXIDES FINE

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Publication number Publication date
BE834651A (en) 1976-04-20
NO138996B (en) 1978-09-11
JPS5727842B2 (en) 1982-06-12
ATA766175A (en) 1977-03-15
GB1513890A (en) 1978-06-14
CH615892A5 (en) 1980-02-29
DE2533925A1 (en) 1977-02-17
FI61854B (en) 1982-06-30
IT1047224B (en) 1980-09-10
DK145890B (en) 1983-04-05
FI752976A (en) 1977-01-31
DK458475A (en) 1977-01-31
NL180199C (en) 1987-01-16
FR2319575B1 (en) 1978-12-01
FI61854C (en) 1982-10-11
NL7512423A (en) 1977-02-01
NO138996C (en) 1978-12-20
DE2533925C3 (en) 1980-12-11
AT339866B (en) 1977-11-10
FR2319575A1 (en) 1977-02-25
SE410963B (en) 1979-11-19
NL180199B (en) 1986-08-18
NO753664L (en) 1977-02-01
DK145890C (en) 1983-10-17
US4276274A (en) 1981-06-30
DE2533925B2 (en) 1980-03-13
JPS5216497A (en) 1977-02-07
SE7511388L (en) 1977-01-31

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