SU764619A3 - Cathode block - Google Patents

Cathode block Download PDF

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Publication number
SU764619A3
SU764619A3 SU2023934A SU2023934A SU764619A3 SU 764619 A3 SU764619 A3 SU 764619A3 SU 2023934 A SU2023934 A SU 2023934A SU 2023934 A SU2023934 A SU 2023934A SU 764619 A3 SU764619 A3 SU 764619A3
Authority
SU
USSR - Soviet Union
Prior art keywords
cathode
substrate
working
april
gas
Prior art date
Application number
SU2023934A
Other languages
Russian (ru)
Inventor
Берроуз Кеннет
Хискатт Роберт
Original Assignee
Триплекс Сейфти Гласс Компани Лимитед (Фирма)
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Application filed by Триплекс Сейфти Гласс Компани Лимитед (Фирма) filed Critical Триплекс Сейфти Гласс Компани Лимитед (Фирма)
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Publication of SU764619A3 publication Critical patent/SU764619A3/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering

Abstract

1443827 Cathode arrangement for reactive sputtering TRIPLEX SAFETY GLASS CO Ltd 4 April 1974 [27 April 1973] 20184/73 Heading C7F A cathode unit comprises a metal cathode 271 and a shield surrounding the cathode on all sides except that facing the substrate, the shield having spaced inner and outer walls 281, 282 between which a sputtering atmosphere is fed into the working space between cathode and substrate. The cathode may be of elongate rectangular form, and have means 52, 51, to pass cooling liquid therethrough; working gas is supplied at 331 and baffles 283, tallest immediately adjacent 331 and reducing in height with distance therefrom, control distribution of the gas along the cathode. Since no gas passes between 271 and 281, the breakdown voltage is higher than the applied cathode potential, e.g. a spacing of 2 to 6 mm. at 5 x 10<SP>-2</SP> Torr enables a working voltage of -2 to -5 KV to be used. The cathode may be In/Sn used in O 2 /Ar to deposit a mixed oxide on a sheet substrate using several parallel cathodes which are reciprocated to give a uniform coating; the substrate is electrically heated and its temperature measured by a thermocouple.

Description

(54) КАТОДНЫЙ БЛОК(54) CATHODE UNIT

1one

Изобретение относитс  к области нанесени  покрытий в вакууме и может .найти-применение, например, при получении металлоокисных покрытий на различных подложках.The invention relates to the field of vacuum coating and can be used, for example, in the preparation of metal oxide coatings on various substrates.

.Известен катодный блок преимущественно дл  устройств дл  нанесени  электропровод гцих пленок методом распылени , содержащий металлический катод, многослойный электростатический экран, окружающий катод со всех сторон, за исключением рабочего участка поверхности катода 1 .A cathode block is known predominantly for sputtering devices for applying electrically conductive films, containing a metal cathode, a multilayer electrostatic screen surrounding the cathode from all sides, with the exception of the working portion of the cathode surface 1.

Однако этот блок обладает невысокой надежностью работы за счет воз- н-икновени  электрического пробо  между катодом и электростатическим экраном.However, this unit has a low reliability of operation due to the return of electrical breakdown between the cathode and the electrostatic screen.

Цель изобретени  - повышение надежности работы катода за счет предотвращени  возможности возникновени  электрического пробо  между катодом и электростатическим экраном. х,,The purpose of the invention is to increase the reliability of the cathode by preventing the possibility of electrical breakdown between the cathode and the electrostatic screen. x ,,

Дл  этого катодный блок преимущественно дл  устройств дл .нанесени  электропровод щих пленок методом распылени , содержащий металлический катод, многослойный электростатический экран, окружающий катод со всех сторон, за исключением рабоче о участка поверхности катода, снабжен; трубопроводом, один конец которого введен в зазор между стенками электростатического экрана, а другой, конец соединен с системой подачи нейтрального газа.For this, the cathode block is mainly used for devices for sputtering electrically conductive films containing a metal cathode, a multi-layer electrostatic shield surrounding the cathode from all sides, except for the working surface of the cathode surface; pipeline, one end of which is introduced into the gap between the walls of the electrostatic screen, and the other end is connected to the supply system of neutral gas.

На фиг. 1 приведена схема конструкции катодного блока, на фиг. 2 разрез катодного блока, на фиг-. 3 10 схема размещени  трубопровода и катодных блоков.FIG. 1 is a diagram of the structure of the cathode block; FIG. 2 is a section through the cathode block; FIG. 3 10 layout of the pipeline and cathode blocks.

Катодный блок преимущественно дл  устройств дл  нанесени  электропровод щих пленок методом распылени  содержит трубопровод 1,. один конед которого введен в эазор между стенками 2 и 3, образующими многослойный электростатический экран, окружающий металлический катод 4The cathode block, preferably for sputtering devices for applying electrically conductive films, comprises a conduit 1 ,. one end of which is inserted into the gap between walls 2 and 3, forming a multi-layer electrostatic screen surrounding the metal cathode 4

20 со всех сторон, кроме рабочего20 from all sides except the worker

участка поверхности катода 4. Второй конец трубопровода 1 соединен с системой подачи, нейтрального газа.the surface of the cathode 4. The second end of the pipeline 1 is connected to the supply system, neutral gas.

Катодный блок функционирует сле25 .дующим образом.The cathode block functions as follows.

Несколько катодных блокой размещены в вакуумной камере (не показала ) . Трубопровод 1 подсоединен ко всем катодным блокам. Напыление металла производитс  на подложку 5,Several cathode block placed in a vacuum chamber (not shown). Pipeline 1 is connected to all cathode blocks. The metal is sprayed onto the substrate 5,

Котора  находитс  в вакуумной камере и расположена над катодными блоками. При напылении металла катод 4 нагреваетс . Дл  охлаждени  катода 4 его внут ренн   полость заполн етс  водой, подаваемой по трубе б или 7. Однако из этих труб  вл етс  наполн ющей , а втора  - отвод щей охлаждающую воду.This is located in a vacuum chamber and located above the cathode blocks. When the metal is sprayed, the cathode 4 is heated. In order to cool the cathode 4, its internal cavity is filled with water supplied through pipe b or 7. However, of these pipes is the filling and the second is the cooling water discharging.

По трубопроводу 1 подаетс  нейтральный газ. Трубопроводов может несколько. Дл  получени  большей однородности потока в полости между стенками 2 и 3 могут быть расположены дополнительные перего-. родки 8,9.Pipeline 1 supplies neutral gas. Pipelines may be several. To achieve greater uniformity of flow in the cavity between walls 2 and 3, additional baffles may be located. birth 8.9.

Дл  пр моугольного катода 4 с раз мерами 7,5 60 см обща  скорость потока газа электростатический экран приблизительно равна 15 л/с при давлении 0,05 мм рт.ст. Промежуток между стенками 2 и 3 может быть выбран в пределах от 3 до 5 мм. Рабочее напр жение катодного блока выбираетс  в пределах от 2 до 5 кВ.For a rectangular cathode 4 with dimensions of 7.5 to 60 cm, the total gas flow rate of the electrostatic screen is approximately 15 l / s at a pressure of 0.05 mm Hg. The gap between walls 2 and 3 can be selected from 3 to 5 mm. The operating voltage of the cathode block is selected from 2 to 5 kV.

-2 Давление в вакуумной камере 5x10 мм-2 Pressure in vacuum chamber 5x10 mm

рт.ст.Hg

Наличие нейтрального газа между стенками 2 и 3 устран ет возможностьThe presence of a neutral gas between walls 2 and 3 eliminates the possibility

пробо  между катодом 4 и стенками 2 и 3, образующими электростатический экран.sample between the cathode 4 and the walls 2 and 3, forming an electrostatic screen.

Claims (1)

1. За вка ФРГ № 2149606, кл. С 23 С 15/00, 1971 (прототип).1. For the application of the Federal Republic of Germany No. 2149606, cl. C 23 C 15/00, 1971 (prototype).
SU2023934A 1973-04-27 1974-04-26 Cathode block SU764619A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2018473A GB1443827A (en) 1973-04-27 1973-04-27 Reactive sputtering apparatus and cathode units therefor

Publications (1)

Publication Number Publication Date
SU764619A3 true SU764619A3 (en) 1980-09-15

Family

ID=10141798

Family Applications (1)

Application Number Title Priority Date Filing Date
SU2023934A SU764619A3 (en) 1973-04-27 1974-04-26 Cathode block

Country Status (13)

Country Link
US (1) US3890217A (en)
JP (1) JPS539594B2 (en)
BE (1) BE814286A (en)
CA (1) CA1024937A (en)
CH (1) CH590936A5 (en)
DE (1) DE2418008A1 (en)
FR (1) FR2227345B1 (en)
GB (1) GB1443827A (en)
IT (1) IT1010755B (en)
NL (1) NL7404891A (en)
SE (1) SE408913B (en)
SU (1) SU764619A3 (en)
ZA (1) ZA742375B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3945911A (en) * 1974-08-28 1976-03-23 Shatterproof Glass Corporation Cathodes for sputter-coating glass sheets or other substrates
US3976555A (en) * 1975-03-20 1976-08-24 Coulter Information Systems, Inc. Method and apparatus for supplying background gas in a sputtering chamber
US4009090A (en) * 1975-12-03 1977-02-22 Shatterproof Glass Corporation Sputter-coating of glass sheets or other substrates
FR2403645A2 (en) * 1977-09-14 1979-04-13 Vide & Traitement Sa Furnace for thermochemical metal treatment - ensures ion bombardment by anodes and cathodes without arc discharge
US4116806A (en) * 1977-12-08 1978-09-26 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
US4175030A (en) * 1977-12-08 1979-11-20 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
JPS57111031A (en) * 1980-12-27 1982-07-10 Clarion Co Ltd Sputtering device
US4362611A (en) * 1981-07-27 1982-12-07 International Business Machines Corporation Quadrupole R.F. sputtering system having an anode/cathode shield and a floating target shield
US4420385A (en) * 1983-04-15 1983-12-13 Gryphon Products Apparatus and process for sputter deposition of reacted thin films
US4526670A (en) * 1983-05-20 1985-07-02 Lfe Corporation Automatically loadable multifaceted electrode with load lock mechanism
US20050211544A1 (en) * 2004-03-29 2005-09-29 Seagate Technology Llc Electrical biasing of gas introduction means of plasma apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325394A (en) * 1963-07-01 1967-06-13 Ibm Magnetic control of film deposition
US3526584A (en) * 1964-09-25 1970-09-01 Western Electric Co Method of providing a field free region above a substrate during sputter-depositing thereon
US3369991A (en) * 1965-01-28 1968-02-20 Ibm Apparatus for cathode sputtering including a shielded rf electrode
US3361659A (en) * 1967-08-14 1968-01-02 Ibm Process of depositing thin films by cathode sputtering using a controlled grid
US3595775A (en) * 1969-05-15 1971-07-27 United Aircraft Corp Sputtering apparatus with sealed cathode-shield chamber

Also Published As

Publication number Publication date
FR2227345A1 (en) 1974-11-22
GB1443827A (en) 1976-07-28
BE814286A (en) 1974-10-28
FR2227345B1 (en) 1977-10-14
ZA742375B (en) 1975-11-26
CH590936A5 (en) 1977-08-31
SE408913B (en) 1979-07-16
AU6775774A (en) 1975-10-16
NL7404891A (en) 1974-10-29
JPS539594B2 (en) 1978-04-06
DE2418008A1 (en) 1974-11-21
US3890217A (en) 1975-06-17
IT1010755B (en) 1977-01-20
JPS5013275A (en) 1975-02-12
CA1024937A (en) 1978-01-24

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