SU731645A1 - METHOD OF CULTIVATION OF SINGLE CRYSTALS BASED ON ALUMINUM OXIDE BY GAS-FLAME METHOD - Google Patents
METHOD OF CULTIVATION OF SINGLE CRYSTALS BASED ON ALUMINUM OXIDE BY GAS-FLAME METHODInfo
- Publication number
- SU731645A1 SU731645A1 SU2593165/26A SU2593165A SU731645A1 SU 731645 A1 SU731645 A1 SU 731645A1 SU 2593165/26 A SU2593165/26 A SU 2593165/26A SU 2593165 A SU2593165 A SU 2593165A SU 731645 A1 SU731645 A1 SU 731645A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- crystal
- diameter
- narrowing
- flame
- aluminum oxide
- Prior art date
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1. Способ выращивания монокристаллов на основе окиси алюминия газопламенным методом, включающий подачу исходного порошка через факел пламени на затравку, разращивание кристалла до заданного диаметра, выращивание кристалла при поддержании постоянных условий процесса, сужение диаметра кристалла в конце процесса, отличающийся тем, что, с целью увеличения выхода кристаллов 30-90- ориентации, сужение диаметра кристалла производят на 40-80% до соотношения высоты суженной части к диаметру, равного 1 : (0,3 - 1,5).2. Способ по п.1, отличающийся тем, что сужение диаметра кристалла производят путем одновременного уменьшения расхода сжигаемых газов и подачи исходного порошка.3. Способ по п.1, отличающийся тем, что сужение диаметра кристалла производят путем одновременного увеличения подачи исходного порошка и скорости опускания кристалла.1. The method of growing single crystals based on aluminum oxide by the flame method, including feeding the original powder through the flame to the seed, growing the crystal to a given diameter, growing the crystal while maintaining constant process conditions, narrowing the crystal diameter at the end of the process, characterized in an increase in the yield of crystals of 30-90 orientation, a narrowing of the diameter of the crystal is produced by 40-80% to a ratio of the height of the constricted part to the diameter equal to 1: (0.3 - 1.5) .2. The method according to claim 1, characterized in that the narrowing of the diameter of the crystal is carried out by simultaneously reducing the consumption of combustible gases and supplying the starting powder. The method according to claim 1, characterized in that the narrowing of the diameter of the crystal is produced by simultaneously increasing the supply of the initial powder and the speed of lowering the crystal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU2593165/26A SU731645A1 (en) | 1978-03-22 | 1978-03-22 | METHOD OF CULTIVATION OF SINGLE CRYSTALS BASED ON ALUMINUM OXIDE BY GAS-FLAME METHOD |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU2593165/26A SU731645A1 (en) | 1978-03-22 | 1978-03-22 | METHOD OF CULTIVATION OF SINGLE CRYSTALS BASED ON ALUMINUM OXIDE BY GAS-FLAME METHOD |
Publications (1)
Publication Number | Publication Date |
---|---|
SU731645A1 true SU731645A1 (en) | 2002-05-27 |
Family
ID=60521218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU2593165/26A SU731645A1 (en) | 1978-03-22 | 1978-03-22 | METHOD OF CULTIVATION OF SINGLE CRYSTALS BASED ON ALUMINUM OXIDE BY GAS-FLAME METHOD |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU731645A1 (en) |
-
1978
- 1978-03-22 SU SU2593165/26A patent/SU731645A1/en active
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