SU731645A1 - METHOD OF CULTIVATION OF SINGLE CRYSTALS BASED ON ALUMINUM OXIDE BY GAS-FLAME METHOD - Google Patents

METHOD OF CULTIVATION OF SINGLE CRYSTALS BASED ON ALUMINUM OXIDE BY GAS-FLAME METHOD

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Publication number
SU731645A1
SU731645A1 SU2593165/26A SU2593165A SU731645A1 SU 731645 A1 SU731645 A1 SU 731645A1 SU 2593165/26 A SU2593165/26 A SU 2593165/26A SU 2593165 A SU2593165 A SU 2593165A SU 731645 A1 SU731645 A1 SU 731645A1
Authority
SU
USSR - Soviet Union
Prior art keywords
crystal
diameter
narrowing
flame
aluminum oxide
Prior art date
Application number
SU2593165/26A
Other languages
Russian (ru)
Inventor
В.А. Бородин
К.П. Малахова
А.Д. Пискун
Т.А. Стериополо
В.А. Татарченко
В.Н. Федоренко
И.Н. Циглер
Л.И. Чернышева
А.П. Чиркин
Original Assignee
В.А. Бородин
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by В.А. Бородин filed Critical В.А. Бородин
Priority to SU2593165/26A priority Critical patent/SU731645A1/en
Application granted granted Critical
Publication of SU731645A1 publication Critical patent/SU731645A1/en

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1. Способ выращивания монокристаллов на основе окиси алюминия газопламенным методом, включающий подачу исходного порошка через факел пламени на затравку, разращивание кристалла до заданного диаметра, выращивание кристалла при поддержании постоянных условий процесса, сужение диаметра кристалла в конце процесса, отличающийся тем, что, с целью увеличения выхода кристаллов 30-90- ориентации, сужение диаметра кристалла производят на 40-80% до соотношения высоты суженной части к диаметру, равного 1 : (0,3 - 1,5).2. Способ по п.1, отличающийся тем, что сужение диаметра кристалла производят путем одновременного уменьшения расхода сжигаемых газов и подачи исходного порошка.3. Способ по п.1, отличающийся тем, что сужение диаметра кристалла производят путем одновременного увеличения подачи исходного порошка и скорости опускания кристалла.1. The method of growing single crystals based on aluminum oxide by the flame method, including feeding the original powder through the flame to the seed, growing the crystal to a given diameter, growing the crystal while maintaining constant process conditions, narrowing the crystal diameter at the end of the process, characterized in an increase in the yield of crystals of 30-90 orientation, a narrowing of the diameter of the crystal is produced by 40-80% to a ratio of the height of the constricted part to the diameter equal to 1: (0.3 - 1.5) .2. The method according to claim 1, characterized in that the narrowing of the diameter of the crystal is carried out by simultaneously reducing the consumption of combustible gases and supplying the starting powder. The method according to claim 1, characterized in that the narrowing of the diameter of the crystal is produced by simultaneously increasing the supply of the initial powder and the speed of lowering the crystal.

SU2593165/26A 1978-03-22 1978-03-22 METHOD OF CULTIVATION OF SINGLE CRYSTALS BASED ON ALUMINUM OXIDE BY GAS-FLAME METHOD SU731645A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU2593165/26A SU731645A1 (en) 1978-03-22 1978-03-22 METHOD OF CULTIVATION OF SINGLE CRYSTALS BASED ON ALUMINUM OXIDE BY GAS-FLAME METHOD

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU2593165/26A SU731645A1 (en) 1978-03-22 1978-03-22 METHOD OF CULTIVATION OF SINGLE CRYSTALS BASED ON ALUMINUM OXIDE BY GAS-FLAME METHOD

Publications (1)

Publication Number Publication Date
SU731645A1 true SU731645A1 (en) 2002-05-27

Family

ID=60521218

Family Applications (1)

Application Number Title Priority Date Filing Date
SU2593165/26A SU731645A1 (en) 1978-03-22 1978-03-22 METHOD OF CULTIVATION OF SINGLE CRYSTALS BASED ON ALUMINUM OXIDE BY GAS-FLAME METHOD

Country Status (1)

Country Link
SU (1) SU731645A1 (en)

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