SU706919A1 - Pulse shaper - Google Patents

Description

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The invention is an ognosigs to the pulse technique and can be used for odds. i.e. pulses that amplitude exceeds the voltage of the power source. . Known pulse shaper, containing capacitors, h key transistors, charge transistor of anti-type conduction type, 2U -1 diodes l.

The amplitude of the output impulse in the specified driver is no more than h times the voltage of the power source.

Known pulse shaper containing h cells and the input transistor

N series-connected cells, each of which contains a transistor, a capacitor and a diode, and an input transistor 2. In the initial state, the capacitors c. using the charge diodes and the input transistor, they are charged to a voltage close to the voltage E of the power supply. When a control signal arrives at the input of the driver (zero

potential) capacitors are connected in series and discharged to the load. In this case, the amplitude of the pulse at the output of the imager does not exceed the value (N + l) E.

The circuit of the invention is to increase the amplitude of the voltage of the output pulses.

This is achieved by the fact that a pulse shaper containing C cells and an input transistor, the emitter of which is connected to the common bus and / through the load — to the collector of the key transistor — the last cell, the base of the key transistors of all the cells connected to the collectors of the key transistors of the previous cells and the cathodes of the diodes, Sbdy which are connected to the cathodes of the diodes of the previous cells, with the anode of the first cell diode connected to the power supply bus, three cells are inserted into each cell a resistor and a control transistor, the base of which is connected through one resistor to its emitter and diode anode, and through another to the collector key of the previous cell, which is connected to the cathode of the diode through a resistor, and the resistor connected to the input transistor collector with uiKtHo.ft of the power supply, and the collector of the control transistor of each cell is connected to the base resistor of the key tpaHSHCtopa. The drawing shows the principle of the proposed shaper. The shaper contains l.-l cells each of which consists of 2 A 2 transistors and an SORTWEAR and 3 way capacitors 4-4 i 5x -5 diodes and 6-6j resistors, | , 5-5, 9-9, input 8-8, 71-7 transistor 10 with a resistor 11 in the collector circuit .. The pulse shaper operates as follows .. / If there is a positive potential at the base of the transistor 10, this transistor is open and saturated. As a result, the transistor 2 j is open and open, which, in turn, supports the open and saturated transistor 3, open, and all the core transistors are also saturated. As a result, the potentials of the collectors of the transistor 10 and the transistors 3 3 are close to zero, and the potentials of the cathodes of the diodes 5. -5 are close to + Е. Thus, each capacitor 4 is charged before voltage, close to voltage E of the power supply. When n: the contact of the control signal (zero potential) with the transistor 10, the transistor closes and the potential of its collector rises. In this case, if condition (l) is satisfied, then the potential of the cathodes of diodes 5–5 becomes close to + 2E. Vi V SC. i - 2 f. ,, O-Ve, ... Hereinafter, the following notation is used: C is the capacitor capacitance; / R - resistor resistance :. B is the transfer coefficient of the go gran-torus when it is turned on according to the scheme with a common emitter. The transistors 2 and 3 are closed, and the collector potential of the transistor 3 rises. If this condition is fulfilled (2), then the potential of the QDBD condition 52-5u becomes close to + 4E. Dov ft SC Y-L. -LCH h) Arguing in a similar way, we find that if for all j, such that N-l), condition (G) is fulfilled, then the pulse amplitude at the collector of transistor 3, i.e. at the output of the form. body, is close to + E- 2. If the output impulses are impulses that are taken backfrequently enough and. the duty cycle of these pulses is small; to the proposed driver, it is possible to provide voltage pulses of the specified amplitude, even if conditions (l) - (h) are not fulfilled. ----; Thus, the amplitude of the pulse voltage produced by the shaper (close to E; 2, which is confirmed by the calculations given in the description. This exceeds the pulse voltage amplitude produced by a known shaper that is close to (N + 1.) LU. So, for example, at W 3 ipaiguda pulses on the presses of the known former, the magnitude of E (3 + 1) 4E does not exceed. FORMULA and a about the brece n and the pulse former containing f7 cells and the input a transistor whose emitter is connected to a common bus and through a load to a collector the key transistor of the last cell, the bases of the key granisgsors of all cells are connected to a resistor, and each cell's condensagore is connected to collectors of transmitting transistors of the transmitting cells, and to the cathodes of diodes, the anodes of which are connected to the cathodes of the diodes of the previous cells, and the anode of the first cell of the first cell, which are connected to the cathodes of the diodes of the previous cells, and the anode of the first cell, which are connected to the cathodes of the previous cells, and the anode of the first cell of the first cell, and the anode of the first cell of the first cell, connected to the cathodes of the preceding cells, and the anode of the first cell of the first cell, connected to the cathodes of the preceding cells power supply, which is the fact that, in order to increase the amplitude of the voltage of the output pulses, three cells and a control transistor are introduced into each cell, a stor with its emitter and anode of the diode, and Che; another cut - with a key collector

the previous transistor transistor, which through a resistor is connected to the cathode of the cell diode, and the resistor connected to the collector of the transistor, is connected to the power supply width, and the collector of the control transistor of each cell is connected to the base resistor of the key transistor.

Sources of information taken in the examination

1. USSR author's certificate NO 406296, cl. H 03 K 1/12, 1971,

2. USSR author's certificate number 445138, cl. H 03 K 5/01, 197 (prototype).