SU645205A1 - Matric storage based on cylindrical magnetic domains - Google Patents

Description

one

The invention relates to the field of computing and can be used in storage devices on cylindrical magnetic domains (CMD).

Known storage devices (memory) on CMD with a series-parallel organization of registers .I, in which several closed registers of small volume are united by a common loop, with each register corresponding to a magnetic key. Using this fly and magnetic keys, input and output of information stored in small registers is carried out. When reading, information in small registers is destroyed, transferred to a large loop, and if it is necessary for further storage, the entire length of the large loop has passed, it is overwritten into small registers. In this case, the probability of collecting information during rewriting is proportional. on the length of the common loop. In addition, with an increase in the volume of memory, the access time increases, since such an organization eliminates the possibility of direct access to a sufficiently small amount of information, for example, to one of the small registers.

It is also known that the memory on the CMD 2 contains plates of a magnetically uniaxial material with magnetic keys located on their shift registers, connected to the advancement channels of cylindrical magnetic domains, and electrically conductive women. Plates of magnetically single material

combined with each other in the form of whatnot. Three of the magnetic keys correspond to each of the registers, forming three sets of keys controlled by three key selectors. With the help of two

sets of keys and information input / output channels, one for each column of registers, record and read information respectively. The third set of keys is used to erase information.

Each set of keys is united by its matrix system of electrically conductive women. The action of the keys is based on the fact that, simultaneously;

horizontal and vertical at the intersection a film element made of a magnetically hard material is remagnetised, which leads to a change in the path of the CMD. This memory is devoid of the drawbacks of device 1. However, the formation of memory from several plates of the domain-containing material leads to an increase in the dimensions of the device, as well as to a decrease in its reliability due to the large

numbers of connections.

In the manufacture of such a charger, it is necessary to form and precisely combine elements in several layers, in particular, it is necessary to form a multilayer structure of electrically conductive women. Each set of keys has its own control device, which complicates the management of the memory.

The object of the present invention is to increase the reliability of the device.

The goal is achieved by the fact that the device contains additional NG plate of a magnetically uniaxial material, additional shift registers - and additional channels of CMD advancement, performed between shift registers and additional shift registers, and magnetic keys are connected to electrically conductive switches. Conductive buses have a matrix structure.

The proposed storage device differs from the known types of storage device on the CMD in that it is possible to form storage devices of arbitrary size based on closed registers of sufficiently small capacity. The access time to an arbitrary, fairly small amount of information is reduced.

FIG. 1 shows a diagram of the device; in fig. 2 shows an example of the implementation of a magnetic key; PhygGZ depicts the phase diagrams of the key operation in the division and transfer modes of the magnetic domain.

The memory consists of columns 1 of the closed shift registers, information input / output channels 2, additional segments of the CMD advancement path 3, magnetic keys 4, 5, 6, electrically conducting matrix 7 of the matrix structure, plate 8 of a magnetically uniaxial material.

As a magnetic key, an element can be used (Fig. 2), which is a permalloy strip 9, which intersects two segments 10, 11 of the CMD advancement path, made on the basis of chevrons.

The memory works as follows. Through the I / O channel, the CMD information is advanced to the selected closed shear register. The magnetic key 4 corresponding to this registry, using current pulses passing along the horizontal pinch, transfers the domains to an additional segment of advancement of MD 3. Through this segment, the domains are advanced to key 5, which is excited by the corresponding bus. This key also works in transfer mode.

domains In this way, information is recorded.

When reading, the domains using the key b, operating in the transfer mode, fall into an additional segment of the advancement path of the CMD 3, advance to the key 4, which, when read without destroying information, works in the domain division mode (Fig. 3A), and when reading the information with the destruction of information in this shift register - in transfer mode

(Fig. 36). In the second case, the domains, after dividing, continue to move along segment 3 to key 5, which is connected to key 6 by the same vertical bus and, therefore, working simultaneously with it in transfer mode. There is a rewrite of information in the shift register. In this case, the vertical area is excited

until the end of the rewrite.

FIG. The phase sector 12 corresponds to the duration of the current pulse with which the domain is extended. With a short pulse 13 of opposite polarity, the domain is cut in half. At the time of the division, the main domain goes along path 10.

FIG. 36 phase sector 14 corresponds to the transfer of the domain up - input information. When information is output, a current pulse is applied corresponding to the phase sector 15.

Claims (2)

Invention Formula A matrix memory device on cylindrical magnetic domains that contains a plate of a magnetically uniaxial material with a shift register, a magnetic key and keys connected to the propulsion channels of the cylindrical magnetic domains, and electrically conductive tires, characterized in that, in order to improve the reliability of the device, it contains on the plate of the magneto-one-dimensional material additional shift registers This is done by a shift register and additional shift registers, and magnetic switches are connected to electrically conductive buses. , Information sources, taken into account in the examination of R. I. Bonyhard et el. Magnetic Bubble Memory Cheep Design. SEEE Magn, MAG-9, No. 3, 433, 173., 2. US patent No. 3737882, cl. 340-174, 1974. ) T. .- “v. at Fcg.1 cfae.3