SU594904A3 - Тиристор - Google Patents
ТиристорInfo
- Publication number
- SU594904A3 SU594904A3 SU742059634A SU2059634A SU594904A3 SU 594904 A3 SU594904 A3 SU 594904A3 SU 742059634 A SU742059634 A SU 742059634A SU 2059634 A SU2059634 A SU 2059634A SU 594904 A3 SU594904 A3 SU 594904A3
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- region
- load segment
- thyristor
- ignition
- control electrode
- Prior art date
Links
- 230000007423 decrease Effects 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 230000003321 amplification Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000010304 firing Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19732346237 DE2346237A1 (de) | 1973-09-13 | 1973-09-13 | Thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
SU594904A3 true SU594904A3 (ru) | 1978-02-25 |
Family
ID=5892508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU742059634A SU594904A3 (ru) | 1973-09-13 | 1974-09-13 | Тиристор |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5057585A (fr) |
BE (1) | BE817255A (fr) |
CA (1) | CA1012255A (fr) |
DE (1) | DE2346237A1 (fr) |
FR (1) | FR2244265A1 (fr) |
GB (1) | GB1465737A (fr) |
IT (1) | IT1021224B (fr) |
SE (1) | SE7411588L (fr) |
SU (1) | SU594904A3 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2501119C1 (ru) * | 2009-09-30 | 2013-12-10 | Инфинеон Текнолоджиз Биполар Гмбх Унд Ко.Кг | Тиристор стадии зажигания с развязывающей стадией зажигания |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2538549C2 (de) * | 1975-08-29 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | Mit Licht steuerbarer Thyristor |
JPS54152477A (en) * | 1978-04-24 | 1979-11-30 | Gen Electric | Thyristor and method of forming same |
-
1973
- 1973-09-13 DE DE19732346237 patent/DE2346237A1/de active Pending
-
1974
- 1974-07-04 BE BE146221A patent/BE817255A/fr unknown
- 1974-07-31 GB GB3372574A patent/GB1465737A/en not_active Expired
- 1974-08-29 CA CA208,132A patent/CA1012255A/en not_active Expired
- 1974-09-09 FR FR7430440A patent/FR2244265A1/fr not_active Withdrawn
- 1974-09-10 IT IT27110/74A patent/IT1021224B/it active
- 1974-09-12 JP JP49105457A patent/JPS5057585A/ja active Pending
- 1974-09-13 SE SE7411588A patent/SE7411588L/xx unknown
- 1974-09-13 SU SU742059634A patent/SU594904A3/ru active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2501119C1 (ru) * | 2009-09-30 | 2013-12-10 | Инфинеон Текнолоджиз Биполар Гмбх Унд Ко.Кг | Тиристор стадии зажигания с развязывающей стадией зажигания |
Also Published As
Publication number | Publication date |
---|---|
JPS5057585A (fr) | 1975-05-20 |
GB1465737A (en) | 1977-03-02 |
IT1021224B (it) | 1978-01-30 |
CA1012255A (en) | 1977-06-14 |
DE2346237A1 (de) | 1975-03-27 |
FR2244265A1 (fr) | 1975-04-11 |
BE817255A (fr) | 1974-11-04 |
SE7411588L (fr) | 1975-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4016592A (en) | Light-activated semiconductor-controlled rectifier | |
JPS5598858A (en) | Gate turn-off thyristor | |
US4060826A (en) | Light activated thyristor capable of activation by intensity radiation | |
GB1057823A (en) | Improvements in semiconductor switch | |
US4001865A (en) | Light controllable thyristor | |
FR2404923A1 (fr) | Transistor bipolaire | |
SU594904A3 (ru) | Тиристор | |
US3995305A (en) | Thyristor | |
US3975754A (en) | Power thyristor having a high triggering speed | |
ES412026A1 (es) | Perfeccionamientos en los componentes semiconductores. | |
JPS6243548B2 (fr) | ||
US4343014A (en) | Light-ignitable thyristor with anode-base duct portion extending on cathode surface between thyristor portions | |
US4737834A (en) | Thyristor with controllable emitter short-circuit paths inserted in the emitter | |
GB1263174A (en) | Semiconductor device | |
US3964091A (en) | Two-way semiconductor switch | |
GB1407062A (en) | Semiconductor devices | |
JPS5687380A (en) | Semiconductor device for detection of radiant light | |
GB1362852A (en) | High frequency planar transistor employing highly resistive guard ring | |
US4812892A (en) | Light controllable thyristors | |
US4035825A (en) | Thyristor with branched base | |
US3777229A (en) | Thyristor with auxiliary emitter which triggers first | |
JPS55134971A (en) | Photofiring thyristor | |
GB1477513A (en) | Unidirectional thyristors | |
SU1398706A1 (ru) | Фототиристор | |
GB1563689A (en) | Light-controllable thyristors |