SU493954A3 - Apparatus for producing crystalline semiconductor material - Google Patents

Apparatus for producing crystalline semiconductor material

Info

Publication number
SU493954A3
SU493954A3 SU1693800A SU1693800A SU493954A3 SU 493954 A3 SU493954 A3 SU 493954A3 SU 1693800 A SU1693800 A SU 1693800A SU 1693800 A SU1693800 A SU 1693800A SU 493954 A3 SU493954 A3 SU 493954A3
Authority
SU
USSR - Soviet Union
Prior art keywords
semiconductor material
carrier
crystalline semiconductor
producing crystalline
vapor
Prior art date
Application number
SU1693800A
Other languages
Russian (ru)
Inventor
Ройшел Конрад
Original Assignee
Сименс Аг (Фирма)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Сименс Аг (Фирма) filed Critical Сименс Аг (Фирма)
Application granted granted Critical
Publication of SU493954A3 publication Critical patent/SU493954A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Description

(54) УСТРОЙСТВО ДЛЯ ПОЛУЧЕНИЯ КРИСТАЛЛИЧЕСКОГО ПОЛУПРОВОДНИКОВОГО МАТЕРИАЛА(54) DEVICE FOR OBTAINING CRYSTALLINE SEMICONDUCTOR MATERIAL

Claims (3)

1. Устройство дл  получени  кристаллического полупроводникового материала из парогазовой смеси, включающее обогреваемый носитель , выполненный из полупроводникового материала, и патрубки, отличающеес  тем, что, с целью исключени  загр знени  получаемого материала, носитель выполнен в виде герметически закрытой относительно наружной атмосферы трубки с патрубками дл  подвода и отвода парогазовой смеси. 2. Устройство по п. 1, отличающеес 1. An apparatus for producing a crystalline semiconductor material from a vapor-gas mixture, comprising a heated carrier made of semiconductor material and nozzles, characterized in that, in order to prevent contamination of the material obtained, the carrier is made in the form of a tube sealed relative to the outer atmosphere supply and removal of gas-vapor mixture. 2. The device according to claim 1, characterized by тем, что носитель окружен спиралью, питаемой высокочастотным электрическим током.the fact that the carrier is surrounded by a spiral, fed by high-frequency electric current. 3. Устройство по п. 1, отличающеес  тем, что носитель присоединен к источнику электрического тока.3. A device according to claim 1, characterized in that the carrier is connected to a source of electrical current. Л ,L, НуWell Фиг. 2FIG. 2
SU1693800A 1970-09-30 1971-09-01 Apparatus for producing crystalline semiconductor material SU493954A3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702048155 DE2048155A1 (en) 1970-09-30 1970-09-30 Arrangement for depositing crystalline semiconductor material

Publications (1)

Publication Number Publication Date
SU493954A3 true SU493954A3 (en) 1975-11-28

Family

ID=5783855

Family Applications (1)

Application Number Title Priority Date Filing Date
SU1693800A SU493954A3 (en) 1970-09-30 1971-09-01 Apparatus for producing crystalline semiconductor material

Country Status (12)

Country Link
JP (1) JPS531204B1 (en)
AT (1) AT321992B (en)
BE (1) BE764761A (en)
CA (1) CA960551A (en)
CH (1) CH561081A5 (en)
CS (1) CS166293B2 (en)
DE (1) DE2048155A1 (en)
FR (1) FR2108381A5 (en)
GB (1) GB1332583A (en)
NL (1) NL7108122A (en)
SE (1) SE363978B (en)
SU (1) SU493954A3 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2573059C2 (en) * 2010-06-04 2016-01-20 Син-Эцу Кемикал Ко., Лтд. Heat treatment furnace

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2573059C2 (en) * 2010-06-04 2016-01-20 Син-Эцу Кемикал Ко., Лтд. Heat treatment furnace

Also Published As

Publication number Publication date
CH561081A5 (en) 1975-04-30
FR2108381A5 (en) 1972-05-19
BE764761A (en) 1971-08-16
SE363978B (en) 1974-02-11
NL7108122A (en) 1972-04-05
CS166293B2 (en) 1976-02-27
JPS531204B1 (en) 1978-01-17
CA960551A (en) 1975-01-07
AT321992B (en) 1975-04-25
DE2048155A1 (en) 1972-04-06
GB1332583A (en) 1973-10-03

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