SU493954A3 - Устройство дл получени кристаллического полупроводникового материала - Google Patents

Устройство дл получени кристаллического полупроводникового материала

Info

Publication number
SU493954A3
SU493954A3 SU1693800A SU1693800A SU493954A3 SU 493954 A3 SU493954 A3 SU 493954A3 SU 1693800 A SU1693800 A SU 1693800A SU 1693800 A SU1693800 A SU 1693800A SU 493954 A3 SU493954 A3 SU 493954A3
Authority
SU
USSR - Soviet Union
Prior art keywords
semiconductor material
carrier
crystalline semiconductor
producing crystalline
vapor
Prior art date
Application number
SU1693800A
Other languages
English (en)
Russian (ru)
Inventor
Ройшел Конрад
Original Assignee
Сименс Аг (Фирма)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Сименс Аг (Фирма) filed Critical Сименс Аг (Фирма)
Application granted granted Critical
Publication of SU493954A3 publication Critical patent/SU493954A3/ru

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
SU1693800A 1970-09-30 1971-09-01 Устройство дл получени кристаллического полупроводникового материала SU493954A3 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702048155 DE2048155A1 (de) 1970-09-30 1970-09-30 Anordnung zum Abscheiden von kri stallinem Halbleitermaterial

Publications (1)

Publication Number Publication Date
SU493954A3 true SU493954A3 (ru) 1975-11-28

Family

ID=5783855

Family Applications (1)

Application Number Title Priority Date Filing Date
SU1693800A SU493954A3 (ru) 1970-09-30 1971-09-01 Устройство дл получени кристаллического полупроводникового материала

Country Status (12)

Country Link
JP (1) JPS531204B1 (de)
AT (1) AT321992B (de)
BE (1) BE764761A (de)
CA (1) CA960551A (de)
CH (1) CH561081A5 (de)
CS (1) CS166293B2 (de)
DE (1) DE2048155A1 (de)
FR (1) FR2108381A5 (de)
GB (1) GB1332583A (de)
NL (1) NL7108122A (de)
SE (1) SE363978B (de)
SU (1) SU493954A3 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2573059C2 (ru) * 2010-06-04 2016-01-20 Син-Эцу Кемикал Ко., Лтд. Печь термообработки

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2573059C2 (ru) * 2010-06-04 2016-01-20 Син-Эцу Кемикал Ко., Лтд. Печь термообработки

Also Published As

Publication number Publication date
BE764761A (fr) 1971-08-16
AT321992B (de) 1975-04-25
SE363978B (de) 1974-02-11
GB1332583A (en) 1973-10-03
CA960551A (en) 1975-01-07
NL7108122A (de) 1972-04-05
FR2108381A5 (de) 1972-05-19
DE2048155A1 (de) 1972-04-06
JPS531204B1 (de) 1978-01-17
CH561081A5 (de) 1975-04-30
CS166293B2 (de) 1976-02-27

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