SU443412A1 - Half-empty storage device - Google Patents

Description

Isosorbent ognosit to uujiacrif computing gekhniki and can be used in the case of half-walled memory storing data, which is a quick change of information,

The long-lasting transformer-type devices on razmnye sesduchnik with a rectangular hysteresis loop, in which information is recorded by flashing the corresponding DIH transformers in the case of units, are perturbed.

Such semi-permanent storage devices (PROMs) about acceptable signal-to-noise ratio and sufficiently large output signal have a disadvantage, due to the need to redock galvanic-H8C1SHH connections to the code buses about keys

Samples with SM8H9 INFORMATIONS THAT

reliability of the device.

The removal of detachable connections of bus tires with sampling keys eliminates the prompt change of information in the EPROM,

The inventive application is an obasP8CHENI9 operative change of information in the Sh13U transformer type 083 disconnection or soldering of galvanically connected electrical circuits.

The goal is achieved T8M, that the code coils are made in the form of closed conductors, of which, each is inductively connected to

0 with one address transformer, having an input winding, and with discharge transformers.

The diagram shows the device’s schematic diagram,

five

The device contains a numerical line formed by bit transformers I having output bit windings 2. The number of bit transformers is determined by the size of numbers stored in the EPROM. Code buses 3 are made in the form of closed conductors, each of which is flashed through bits transformers I, in accordance with the code of numbers stored in PIZU. I The number of addressable transformers 4 in the simplest case is equal to the number stored in the EPROM, On the front end of the pre-drive tire 3 with matching address formers.

When reading information from the backup device on the selected address, the input winding 5

A current impulse is transmitted through the outgoing transducer 4; which code bus 3 is stitched.

In connection with TSM, that as far as code buses can go through one and three-stage discharge transformers, a current of the opposite sign with respect to the current of the selected code bus is induced on the selected code chips. At the same time, on the discharge windings of the discharge transformers I, which were not chosen by code bus 3 (stored safely), an emf of opposite sign is induced with respect to the emf at the output of the discharge bus transformers (store unit).

There are zero and 8Di signals of the opposite sign, and a ratio of a lower signal / pomeha of the memory device is displayed.

434i2

Due to the fact that the code bus 3 has the form of closed conductors, the information in the PISU is essentially simplified, because the code bus can be implemented as closed printed software on the punched cards.

This change of information does not require redocking or soldering galvanically connected electrical circuits, but reduces to replacing one set of punched cards with another.

The ease and speed of replacing information in the EPROM, due to the lack of pzrzpvek and pzrztykovok, allow you to get the economic effect when applying predlagazmogo Sh13U,

SUBJECT OF INVENTION

The half-empty memory device, which contains bit and address transformers, has been made to diffuse cores with direct hysteresis with output windings and code buses, which are different in that, in order to change information in the device, the code tires are full. FROM which are inductively coupled to appropriate address transformer and discharge transformers.

eleven

V (5oria)