SU1581094A1 - METHOD OF MANUFACTURING TERMINAL RESISTORS - Google Patents

METHOD OF MANUFACTURING TERMINAL RESISTORS

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Publication number
SU1581094A1
SU1581094A1 SU4295894/21A SU4295894A SU1581094A1 SU 1581094 A1 SU1581094 A1 SU 1581094A1 SU 4295894/21 A SU4295894/21 A SU 4295894/21A SU 4295894 A SU4295894 A SU 4295894A SU 1581094 A1 SU1581094 A1 SU 1581094A1
Authority
SU
USSR - Soviet Union
Prior art keywords
terminal resistors
manufacturing terminal
ion
resistive element
stabilizing
Prior art date
Application number
SU4295894/21A
Other languages
Russian (ru)
Inventor
В.Г. Недорезов
Т.П. Каминская
Л.В. Головко
М.Б. Анкирская
Original Assignee
В.Г. Недорезов
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by В.Г. Недорезов filed Critical В.Г. Недорезов
Priority to SU4295894/21A priority Critical patent/SU1581094A1/en
Application granted granted Critical
Publication of SU1581094A1 publication Critical patent/SU1581094A1/en

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  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

Способ изготовления толстопленочных резисторов, включающий формирование на диэлектрической подложке резистивного элемента, термическую обработку, ионную очистку поверхности резистивного элемента и создание контактов к нему, отличающийся тем, что, с целью повышения надежности за счет снижения и стабилизации величины, контактного сопротивления, ионную очистку поверхности резистивного элемента проводят при напряжении пучка ионов 2 - 4 кВ и плотности потока ионов 6 - 10мА/смв течение 0,5 - 4 ч.A method of manufacturing thick-film resistors, comprising forming a resistive element on a dielectric substrate, heat treatment, ion cleaning the surface of a resistive element and making contacts to it, characterized in that, in order to increase reliability by reducing and stabilizing the value, contact resistance the element is carried out at an ion beam voltage of 2–4 kV and an ion flux density of 6–10 mA / cm for 0.5–4 h.

SU4295894/21A 1987-08-11 1987-08-11 METHOD OF MANUFACTURING TERMINAL RESISTORS SU1581094A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU4295894/21A SU1581094A1 (en) 1987-08-11 1987-08-11 METHOD OF MANUFACTURING TERMINAL RESISTORS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU4295894/21A SU1581094A1 (en) 1987-08-11 1987-08-11 METHOD OF MANUFACTURING TERMINAL RESISTORS

Publications (1)

Publication Number Publication Date
SU1581094A1 true SU1581094A1 (en) 1999-10-10

Family

ID=60529306

Family Applications (1)

Application Number Title Priority Date Filing Date
SU4295894/21A SU1581094A1 (en) 1987-08-11 1987-08-11 METHOD OF MANUFACTURING TERMINAL RESISTORS

Country Status (1)

Country Link
SU (1) SU1581094A1 (en)

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