SU1401595A1 - Shottky-diode integrated logic valve - Google Patents

Abstract

This invention relates to a specific technique and can be used in integrated circuits. The purpose of the invention is improving the speed of the valve. Venti.1b contains a switching pr-p - p-transistor (T) 1, a Giottky diode 4 and a shunt p - n - p T 6. By connecting a co-collector (K) p-P-p-T 6 to the Schottky diode apode capacitance K - ground p-p-p-T i amplified niqs on the value of capacitance K - base p pp-T C) and the capacity of the anode-cathode of the Schottky diode 4 increases. The circuit of the ventilator pniiaeT . Py p - p-T 6 additional K and the introduction of additional Schottky diodes. 1 3. Clause f-ly. 3 square

Description

fi one

O1

with ate

I: i) D) p1M I1n-1giosits-to the pulsed hekhi-kyo, and to the chisy-and-more to the logic gates, and was used in integrated circuits.

 isobregemii.ch is the elevation of fast-paced aeityl.

Fig. I shows the electrical circuit of the proposed valve; in fig. 2 - then zhr. with extra vols; in fig. 3 is a diagram of the valve connection.

This depends on the delay of the valve ggry and. The voltage across the input is from O to 1, determined by the current of the current element of element f) (kan and in the absence of a shunt transistor 6). The barrier voltage of the base-zmitter of the pn-transistor transistor 6 is chosen to be less than the barrier voltage base - collector of the switching n - p - n transistor 1, - thanks to which the saturation of the n - p-n-trans valve is limited integrated logic with diode 0 of resistor 1, which is important from the point of view of semi-schottky (fig. 1), contains a switching low delay when the input voltage goes from 1 to 0.

When the voltage at the inlet of the valve goes from level i to o, the charge is absorbed

these transistors b pnp-type compared with the transistor I pnpn type, and also due to the fact that most of the absorbing current enters the base pnpn transistor - p - p transistor I, the emitter of which is connected to 2 of zero potential, and the base is input 3, Shottka diode 4, the cathode of which is connected to the collector in the bases p-p-1 and pp-p - 6 transistor switchable transistor 1, and the anode ditch. At the same time, by virtue of the greater and the actionability is v (stroke 5 of the valve, shunt p - n - p-trat1 | resistor 6, the emitter and the base of which are connected (s respectively to the base and collector of the switching transistor 1,

and the collector is connected to the anode of the Schott-20 diode 1, after the resorption of the charge in the base of the ki 4..pnp transistor i in the pnpntrV base of the gate (fig. 2) of the shunt transistor 6 Only a part of the charge is dissipated, the resistor 6 is supplied with additional collections. Accordingly, the collector current n - p-pors and the additional diodes of the transistor 1 are abruptly reduced to zero Schottky 7 (in Fig. 1 one diode), the cathodes are 25 ex. The output 5 of the valve will start to be connected to the collector - switch from O to 1, and the collector current

The pn transistor b continues to flow (until the charge at its base decreases to zero). In the well-known valve, the current of the collision of the pnp transistor b flows 30 n, the ground pin 2 does not affect the recharging rate of the output capacitance — the ven p, whereas. in the proposed technical solution, due to the scrub, the collector of the ppb of the transistor b to the diode input of its transistor 1, and the anode of each of which is corresponding to the additional (m (; house 8 valve and connected to the corresponding collector schuntiruyu- tseg} Tpasi:, .4CTOpa 6.

Current., 311; e: tapes 9 can be connected both to inputs 3 and to outputs 5 and B of the valves, which is equivalent in technical characteristics (Fig. 3).

Preferred gate of integrated logic with diode N

in a way.

G1sli at the input of the 3th valve is the logical level “Oh, nept the key is the ig-n-p-n-l and the shuntyrkulyy r-n – rb transistors are closed.

yes Schottky 4 collector current p - n - p-trans Pastki operates as follows by the resistor b in conjunction with the current-generating current

element 9 when the output voltage goes from O to recharges the output capacitance of the valve. Thus, in the proposed valve, due to the inertia of the current of the collar output 6, the valve has a level of 40 lecturer C (for a rotated pn-p-transistor 6 it is possible to increase the total current that recharges the output capacitance of the valve during transients, and accordingly increase the speed and increase the steepness of the fronts.

- The capacitance of the anode-cathode UJOTTLK 4 in the output valve works as an acceleration: when the voltage at the output of the valve goes from i to O. due to the rfpoTeKaHKH current when the Schottky diode is closed through capacitance, the recharge time is reduced You can use the erxiK.ocTH valve, an increase in the indicated capacitance -.and 1p will increase the speed. Therefore, when the collector of the p-p transistor 6 is connected to the dis anode (fi ircscoH ". The voltage transfer voltage across the city of the LODs 3 valve from O to 1 is current of the current generating element 9; a}) the input capacitance the gate when the input voltage reaches the level of the valve iiopoi a switched pp - ptransistor, transistor 1 closes. the voltage on the ei o-collector decreases and only after decreasing on the output voltage of the 5th valve from the logic level "1 to the logic level" O opens Kiyin ruo; p-p-transis-fop b, rk; ; hp chsgs) due to the flow of excess T () pg; th input current into the emitter p --- n - p- granzister (the base current is multiplied

a-p - pt c a 11 z p; i

In this way, despite m. 1G | The GOK of the base p p p-transisd of Schottky 4 achieves an additional flow i in a static state at level 5 higher speeds of the proposed veni- tological. th kb and;) i.od1 3, the tokatil is large, since when im on zelich ynu e ip: -re; and | 1) /) (. marisitic venous capacitance collector-base pnp-transistor 1 / I during the rotation of the recholi x ii) o ieccoB, from the cora b the reservoir capacity decreases ---- earth

This depends on the delay of the valve ggry and. The voltage across the input is from O to 1, determined by the current of the current element of element f) (kan and in the absence of a shunt transistor 6). The barrier voltage of the base-zmitter of the pn-p-transistor 6 is chosen to be less than the barrier voltage base - the collector of the switching n - p - n transistor 1, thanks to which the saturation of the n - p-translit is limited from level i to o dissolves the charge

 in the bases pp-1 and pp-p-6 transistors. At the same time, due to the larger and more efficient

these transistors b pnp-type compared with the transistor I pnpn type, and also due to the fact that most of the absorbing current enters the base pnpn transistor in the bases of p -n-1 and pp-6 transistors. At the same time, due to the larger and more efficient

 After the absorption of the charge in the base of the pnp transistor i in the base of the pnpnnpp transistor, the bone anode and the Schottky cathode 4 increase.

When the outputs of various gates are combined, the “mounting I” function is realized. If the valve has additional outputs 8 (FIG. 2), then the “mounting AND” function on each additional output 8 is possible.

Claims (2)

1. The gate of integrated logic with Schottky diodes, containing a switching pnp transistor, the emitter of which is connected to the zero potential bus, the base is connected to the input of the valve, the Schottky cathode of the diode is connected to the collector of the switching npn transistor, and the anode connected to the output of the valve, shuntypig p - p - p transistor, the emitter and the base of which are connected respectively to the base and Ko. i The lecturer of a switching-over pn transistor, characterized in that, for the purpose of newer speed, to the lecture of a shunt p-n-p transistor is connected to the anode of the Schottky anode. 2. Valve according to claim 1, characterized in that the transistor is equipped with additional collectors and additional capacitors are inserted, the nominal Schottky diodes, the cathodes of which are connected to the switching n collector, and the anode of each connected to the corresponding additional output of the valve and is connected to the corresponding additional collector shunt pn - p-transistor. puz-Z