SU1374203A1 - D.c. voltage stabilizer - Google Patents

Abstract

The invention relates to electrical engineering and can be used to power electronic equipment. The purpose of the invention is to increase the temperature stability of the output voltage. Introduction to a device containing MOS transistors 1-5 and resistors 6.7, bipolar transistor 10 and resistor 11 allows to compensate for the temperature drift of the control voltages of the MOS and bipolar transistors. This makes it possible to obtain a temperature-compensated reference voltage at low current consumption. 1 il. (L

Description

GPE

1 to

oo p1

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Yu

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one,

The invention relates to electrical engineering and can be used in sources of secondary power supply of electronic equipment.

The aim of the invention is to increase the temperature stability of you. running voltage, stabilizer.

The circuit diagram of the device is shown in the drawing.

The constant voltage regulator contains the first 1, second 2, third 3, fourth 4 and fifth 5 MOS transistors, the first 6 and second 7 resistors, the source of transistor 1 connected to the common bus, the drain of transistor 2 is connected to the gate of transistor 3, resistor b is connected between input 8 and output 9 buses, and the gates of transistors 5 and 4 are combined, the sixth transistor 10 and the third resistor -11, transistors, 3,4 and 5 are made of opposite conductivity type to transistors 1 and 2, the sources of transistors 5 and 4 are connected to the input bus 8, the drain transistors 5 and 4 podk The connections to the input bus &, the drain of transistor 5 are connected to its gate and the drain of transistor 1, the drain of transistor 4 is connected to the drain of transistor 2, the source of which is connected to the common bus, and the gate to the first output of resistor 7 and the emitter of transistor 10, collector which is connected to the input bus 8, the gate of the transistor 1 is connected to the second output of the resistor 7 and through the resistor 11 to the common bus, the source of the transistor 3 is connected to the output bus 9 and the base of the transistor 10, and its drain to the common bus. .

The device works as follows.

By increasing the voltage at the output of the stabilizer by some degree, part of it through the emitter transistor 10 is fed to the amplifier. This leads to a decrease in the drain potential of transistor 2, which, in turn, increases the conductivity of transistor 3, thereby compensating for an increase in output voltage.

The low current consumption of the circuit is due to the subthreshold mode of operation of the MOS transistors in the region defined by the current-voltage characteristic of the MOS transistors with the following limitations:

Uc-Un7 3 mV,

1 x 300 nA

If the above constraints are satisfied, to the pass-through characteristic of the MOS transistor is determined by

ten

 (-e- c / i / T),

Io s-icoe

E

0 where I with

n C

five

If the drain currents of transistors obey the above law, then their values can be defined by their expressions:

Si. S;

s,

i (n. g

W, / L,

one

1) / Rn. j 04

characteristic current, coefficient of steepness, temperature potential,

the ratio of the effective channel width to its length.

and.

and

and.

w

0

 the voltages, respectively, at the gate, source, and drain of the transistors with respect to the substrate.

The reference voltage is determined by the ratio

35

you

ieb1o + aU ,, (1 + R, / R ,,),

Where

dU, ni, .n

S, - Sj

S, -S,

In this voltage, the voltage Ujg, has a negative temperature drift, and the voltage dUj is positive and the choice of the ratio of resistors can be compensated for.

The implementation of a bipolar transistor in MOS technology is ensured by performing it in a vertical structure and connecting a collector (substrate of p-channel MOS transistors) to the most positive potential of the circuit — the input bus of the device. Introduction of a bipolar transistor to the circuit reduces the variation in the values of the output thermally stabilized voltages, since the technological variation of the voltages of the unlocking of the bipolar transistor Ujg is less. than the threshold voltage of MOSFETs.

Thus, an improvement in the temperature stability of the output voltage of the proposed stabilizer as compared to the known one is achieved in HW compensation of the temperature drifts of the control voltages of the MOS and bipolar transistors, which allows one to obtain a temperature-compensated reference voltage with a low current consumption of the circuit.

Claims (1)

Invention Formula A DC voltage regulator containing five MOS transistors and two resistors, the source of the first transistor connected to the common bus, the drain of the second connected to the gate of the third, the first resistor connected between the input and output buses, and the gates of the fourth and fifth transistors combined, characterized in that, in order to improve the temperature stability of the output voltage, a sixth bipolar transistor, a third resistor, is introduced into it, with the sources of the fourth and the fifth transistor is connected to the input bus, the drain of the first is connected to its gate and the drain of the first transistor, the drain of the fourth is connected to the drain of the second transistor, the source which is connected to the common bus and the gate to the first output of the second resistor and the emitter of the sixth transistor, whose collector is connected to the input bus, the gate of the first transistor is connected to the second voltage of the second resistor and through the third resistor to the common bus, the source of the third transistor is connected to the output bus and base of the sixth transistor, and 6th stock. - with a common bus, with this. The third, fourth, and fifth transistors are made with a conductivity type opposite to that of the first and second transistors.