SU1379778A1 - D.c. voltage stabilizer - Google Patents

Abstract

The invention relates to electrical engineering and can be used in power supply devices for electronic equipment. The purpose of the invention is to increase efficiency and reliability by reducing current consumption and simplifying circuits. The device contains MOS transistors 1,2,3 of the same type of conductivity, G) P-transistors 4,5,6 of the opposite type of conductivity, resistors 9,10, Realization in the device of the voltage source and the error signal amplifier as a single functional unit allows to obtain a low thermally compensated reference voltage, independent of the effect of unstabilized input voltage. The circuit device is simple and reliable. I il. with (L

Description

with

  -vl

00

The invention relates to electrical engineering and can be used in devices for the secondary power supply of electronic equipment.

The purpose of the invention is to increase the efficiency and reliability of the stabilizer by reducing current consumption and simplifying

The drawing is a schematic diagram of the stabilizer.

The DC voltage stabilizer contains the first 1, second 2 and third 3 MOS transistors of the same conductivity type, the fourth 4, fifth 5 and sixth 6 UP transistors of the opposite conductivity type, the drain of the first transistor 1 being connected to the output bus 7, and the sources the first 1, second 2 and third 3 transistors are connected to the input bus 8, the gates of the second 2 and third 3 transistors are connected, and the drain of transistor 2 is connected to the drain of transistor 4, the gates of transistors 5 and 6 are connected, and the source of transistor 6 is connected to a common bus, first 9 and second 10 p The resistors 9 are connected between the source of the transistor 4 and the drain of the transistor 5 connected to its gate, the resistor 10 is connected between the source of the transistor 5 and the common bus, the drain and the gate of the transistor 2 are connected, the gate of the transistor 4 is connected to the output width 7, and the gate of the transistor 5 1 is connected to the combined drains of transistors 3 and 6,

The stabilizer works in the following way.

When reducing for some reason the voltage at the output, the potential of the gate of transistor 4 decreases, and the potential of the drain increases. This leads to a decrease in the potential at the gate of transistor 3, an increase in the potential in the drain of this transistor, and the opening of transistor 1. An increase in the conductivity of transistor 1 leads to an increase in the output voltage.

The reference voltage in the Form 1 device is reproduced as follows. Transistors 2-6 operate in microcurrent mode. The pass characteristic of a MOS transistor operating in a micro mode (in the sub-threshold region of its pass-through characteristics) is described by the relation

1c Slc.

where 1 (.р is the characteristic current; n is the coefficient of steepness; s ;, is the temperature potential; S-W / L is the ratio of the effective width of the channel to its length,

),P.

 voltage, respectively, at the gate, source, and drain with respect to the substrate. The difference in gate voltages - the source of transistors operating in the subthreshold region, is defined as

whether.

The reference voltage is determined by the ratio

Uon 2U, “R ,.

1C

In the microcurrent mode, the voltage has a negative temperature drift, and the voltage Uj is positive. By choosing the ratio R, / R, the indicated Dray41 1 are compensated,

The “1” stabilizer, compared to the known, has a higher efficiency and stability of the output voltage due to the implementation of the ION and the error signal amplifier as a single functional angle, which allows to obtain a relatively low temperature-compensated reference voltage, independent of the effect of the unstabilized input voltage. voltage, as well as greater reliability due to a simpler stabilizer.

Claims (1)

Invention Formula A DC voltage regulator containing the first, second, and third MOS transistors of the same type of conductivity, the fourth, fifth, and sixth MOS transistors of the opposite type of conductivity, the drain of the first transistor being connected to the output bus, and the sources of the first, second, and third transistors to the input bus, the gates of the second and third transistors are combined, and the drain of the second transistor is connected to the drain of the fourth transistor, the gates of the fifth and sixth transistors are combined, and the source of the sixth transistor is connected to the common tire, characterized in that, in order to increase the tire head and the reliability 31379778 by simplifying and reducing the current source of the fifth transistor and the total consumption, the first busbar, the drain and the gate of the transistor, and the second resistors are inserted in it, the first is re-connected, the gate of the fourth transistor is connected between the source of the four-resistor and the output transistor and by the drain of the fifth, the gate of the first transistor of the sub-transistor connected to its connected to the combined drains of the third thief, the second resistor is connected between the sixth and the transistors