SU1305829A1 - Differential amplifier based on insulated-gate field-effect transistors - Google Patents

Abstract

The invention relates to the field of automation and computing. The purpose of the invention is to reduce the coefficient. influence of supply voltage (NIP). Y contains nine transistors (t) 1-9. The change in NPC is transmitted with a coefficient. transmissions close to 1 to gates T 6 and 9. The change in the magnitudes of the currents specified by these T is transmitted to the load cells on T 4 and 5. The change in current compensates for a change in the output voltage at the output of the l. Thus, a change in the NPC does not lead to an imbalance of y and, respectively, 1 ill. reduced coefficient influenced by NSH. co O O1 00 y co

Description

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This invention relates to automation and computing and can be used as an amplifier stage in operational amplifiers or voltage comparators.

The purpose of the invention is to reduce the coefficient of influence of the voltage of the power source.

The drawing shows the principal electrical circuit of the MOSFET proposed transistor differential amplifier.

Amplifier contains transistors 1-9 for the first through ninth.

The differential amplifier on Mda transistors works as follows.

When the differential input signal is supplied between the gates of the first and second transistors 1 and 2, the current, defined by the third transistor 3, is redistributed between the shoulders of the differential stage on MOS transistors. In this case, on the load elements — the fourth and fifth transistors 4 and 5, the output differential voltage is separated. Fourth and fifth transistors 4 and 5 flow through and the currents of the sixth and ninth transistors 6 and 9, respectively. and 9 through the source follower on the seventh and eighth transistors 7 and 8. When the voltage of the power source changes, this change is transmitted with a transfer coefficient close to one to the gates of the sixth and ninth transistors 6 and 9, the current values changing, these transistors are transmitted to the load cells on the fourth and fifth transistors 4 and 5. The change in current is of such a nature that

Editor 0. Yurkovetska

Compiled by V. Serov Tehred M.Hodanich

Order 1464/54 Circulation 902

VNIIPI USSR State Committee

for inventions and discoveries 113035, Moscow, Zh-35, Raushsk nab, 4/5

Production and printing company, Uzhgorod, st. Project, 4

at the output of the differential amplifier at MOS transistors, it pays a voltage variation of the power source. Thus, a change in the voltage of the power source does not lead to an imbalance of the amplifier and, accordingly, the influence factor of the voltage of the power source decreases.

- About Formula

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The differential amplifier on MOS transistors containing the first and second transistors, whose sources are connected to the drain of the third transistor, drains. The gates are differential inputs on the MOS transistors and the sources of the fourth and fifth transistors respectively. an amplifier on MIS transistors, because the gate of the third transistor is connected to the bus of the bias voltage source, the source is connected to the first bus of the voltage source, the drains of the fourth transducer ip The resistors are connected to a second power supply source busbar, characterized in that, in order to reduce the influence factor of the power supply voltage, sixth, seventh, eighth and ninth transistors are inserted into it, and the gate of the sixth transistor is connected to the seventh source and drain. the eighth and the gate of the ninth transistor, the drains of the sixth and ninth transistors are connected to the drains of the first and second transistors, respectively, the sources of the sixth, eighth and ninth transistors are connected to the first bus source voltage The power supply, the gate of the eighth transistor is connected to the gate of the third transistor, the gate and the drain of the seventh transistor are connected to the second power supply line bus.

Proofreader L. Pilipenko

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Claims (1)

Claim I • A differential amplifier on MOS transistors, containing the first and second transistors, the sources of which are connected to the drain of the third transistor, the drains are connected to the gates * and the sources of the fourth and fifth transistors respectively and are the outputs of the differential amplifier on the MIS transistors, the gates are the inputs of the differential the amplifier on the MOS transistors, this is the gate of the third transistor connected to the bias voltage source bus, the source to the first voltage source bus, the drains of the fourth and fifth trans the sources are connected to the second bus of the voltage source of the power source, characterized in that, in order to reduce the coefficient of influence of the voltage of the power source, sixth, seventh, eighth and ninth transistors are introduced into it, and the gate of the sixth transistor is connected to the source of the seventh, drain of the eighth and gate of the ninth transistors, drains of the sixth and ninth transistors are connected to drains of the first and second transistors, respectively, the sources of the sixth, eighth and ninth transistors are connected to the first bus of the voltage source I power, the gate of the eighth transistor is connected to the gate of the third transistor, the gate and drain of the seventh transistor are connected to the second bus of the power supply source.