SU131386A1 - High impedance - Google Patents

High impedance

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Publication number
SU131386A1
SU131386A1 SU646690A SU646690A SU131386A1 SU 131386 A1 SU131386 A1 SU 131386A1 SU 646690 A SU646690 A SU 646690A SU 646690 A SU646690 A SU 646690A SU 131386 A1 SU131386 A1 SU 131386A1
Authority
SU
USSR - Soviet Union
Prior art keywords
resistance
films
high impedance
weight
oxide
Prior art date
Application number
SU646690A
Other languages
Russian (ru)
Inventor
И.В. Шпакова
Original Assignee
И.В. Шпакова
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by И.В. Шпакова filed Critical И.В. Шпакова
Priority to SU646690A priority Critical patent/SU131386A1/en
Application granted granted Critical
Publication of SU131386A1 publication Critical patent/SU131386A1/en

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  • Coating By Spraying Or Casting (AREA)

Description

Известны высокоомные сопротивлени , получаемые путем нанесени  методом распылени  на изолирующее основание тонкого провод щего сло  на основе окиси олова с добавкой окиси сурьмы.High resistances are known that are obtained by spraying a thin conductive layer based on tin oxide with the addition of antimony oxide on the insulating base.

Предлагаемое сопротивление отличаетс  от известных тем, что со ,держание окиси сурьмы составл ет 1% вес. и дополнительно введена окись цинка в количестве 5-8% вес.The proposed resistance differs from that known in that with, the retention of antimony oxide is 1% by weight. and additionally introduced zinc oxide in the amount of 5-8% weight.

Такое выполнение сопротивлени  позвол ет получить пленки, обладающие высоким удельным сопротивлением при низком температурном коэффициенте и высокой стабильностью в интервале температур -60 -+250.Such an embodiment of the resistance allows to obtain films with high specific resistance with a low temperature coefficient and high stability in the temperature range of -60 - + 250.

Согласно предлагаемому способу пленки нанос тс  на предварительно нагретые штабики из тугоплавкого бесщелочного стекла методом пульверизации. Стекло нагреваетс  до 750°; врем  обработки пленкообразующим раствором составл ет 20 сек.According to the proposed method, films are deposited onto preheated rods of refractory alkali free glass by sputtering. The glass is heated to 750 °; the processing time of the film-forming solution is 20 seconds.

Удельное поверхностное сопротивление пленок, полученных таким способом, колеблетс  от 10 до 2000 ом. Пленки с удельным поверхностным сопротивлением от 10 до 300 ом имеют температурный коэффициент сопротивлени  (ТКС) меньще 1,5.10-4 а пленки с сопротивлением 400-2000 ом имеют ТКС меньще 6,0.10-4 Пленки стабильны в интервале температур от -60 до +250° (изменение сопротивлени  при температуре 250° в течение 50 час не превыщает ±1%).The surface resistivity of the films obtained in this way ranges from 10 to 2000 ohms. Films with specific surface resistance from 10 to 300 ohms have a temperature coefficient of resistance (TKS) less than 1.5.10-4 and films with a resistance of 400-2000 ohms have TKS less than 6.0.10-4 Films are stable in the temperature range from -60 to +250 ° (change of resistance at a temperature of 250 ° for 50 hours does not exceed ± 1%).

Предмет изобретени Subject invention

Высокоомное сопротивление, полученное путем нанесени  методом . распылени  на изолирующее основание тонкого провод щего сло  на основе окиси олова с добавкой окиси сурьмы, отличающеес  тем, что, с целью получени  сопротивлени  с низким температурным коэффициентом и высокой стабильностью в щироком интервале температур, содержание окиси сурьмы составл ет 1% вес. и дополнительно введена окись цинка в количестве 5-8% вес.High resistance obtained by deposition method. spraying the insulating base of a thin conductive layer based on tin oxide with the addition of antimony oxide, characterized in that, in order to obtain resistance with a low temperature coefficient and high stability in the wide temperature range, the content of antimony oxide is 1% by weight. and additionally introduced zinc oxide in the amount of 5-8% weight.

SU646690A 1959-12-09 1959-12-09 High impedance SU131386A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU646690A SU131386A1 (en) 1959-12-09 1959-12-09 High impedance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU646690A SU131386A1 (en) 1959-12-09 1959-12-09 High impedance

Publications (1)

Publication Number Publication Date
SU131386A1 true SU131386A1 (en) 1960-11-30

Family

ID=48402461

Family Applications (1)

Application Number Title Priority Date Filing Date
SU646690A SU131386A1 (en) 1959-12-09 1959-12-09 High impedance

Country Status (1)

Country Link
SU (1) SU131386A1 (en)

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