SU127334A1 - Method for measuring diffusion length of current carriers in germanium and silicon ingots - Google Patents
Method for measuring diffusion length of current carriers in germanium and silicon ingotsInfo
- Publication number
- SU127334A1 SU127334A1 SU607733A SU607733A SU127334A1 SU 127334 A1 SU127334 A1 SU 127334A1 SU 607733 A SU607733 A SU 607733A SU 607733 A SU607733 A SU 607733A SU 127334 A1 SU127334 A1 SU 127334A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- diffusion length
- germanium
- current carriers
- silicon ingots
- measuring diffusion
- Prior art date
Links
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
Диффузионна длина носителей тока в германии и кремнии обычно определ етс по методу, основанному на модул ции проводимости точечного контакта. Основной недостаток этого метода - зависимость результатов измерений от уровн инъекции, т. е. от величины тока через точечный контакт.The diffusion lengths of current carriers in germanium and silicon are usually determined by a method based on the modulation of the conductivity of a point contact. The main disadvantage of this method is the dependence of the measurement results on the injection level, i.e., on the amount of current through the point contact.
Предлагаемый способ отличаетс от известных тем, что он устран ет зависимость результатов измерений от уровн инъекции и тем самым повышает точность измерений.The proposed method differs from the known ones in that it eliminates the dependence of the measurement results on the injection level and thereby improves the measurement accuracy.
Это достигаетс тем, что дл измерений диффузионной длины используют значени фотоэлектродвижущей силы холостого хода при поверхностной и объемной генерации пар носителей тока.This is achieved by using the idling photoelectromotive force values for surface and volume generation of carrier pairs for measuring the diffusion length.
Сущность описываемого способа состоит в следующем.The essence of the described method is as follows.
Торец слитка освещают световым потоком, диаметр которого больще диффузионной длины носителей тока. Световой поток пропускаетс : при исследовании герм-ани - через слой воды, а при исследовании кремни - через фосфатное стекло. В центре освещенной повер.хности устанавливают точечный зонд и измер ют фотоэлектродвижущую силу холостого хода. Затем пропускают свет через интерференционный инфракрасный фильтр и вновь измер ют фотоэлектродвижущую силу. По результатам измерений определ ют диффузионную длину носителей тока.The end face of the ingot is illuminated by a luminous flux, the diameter of which is greater than the diffusion length of current carriers. The luminous flux is transmitted: in the study of germs, through a layer of water, and in the study of silicon, through phosphate glass. In the center of the illuminated surface, a point probe is installed and the photoelectromotive force of idling is measured. Then light is passed through an infrared interference filter and the photoelectromotive force is measured again. From the measurement results, the diffusion length of the current carriers is determined.
Яо 127334Yao 127334
Предмет изобретени Subject invention
Способ измерени диффузионной длины носителей тока в слитках германи и кремни , отличающийс тем, что, с целью повышени точности измерений, торец слитка освещают световы.м потоком, диаметр которого больше диффузионной длины носителей тока, пропущенным при исследовании германи через слой воды, а при исследовании кремни - через фосфатное стекло, измер ют фотоэлектродвижущую силу посредством точечного зонда, пропускают свет через интерференционный инфракрасный фильтр, вновь измер ют фотоэлектродвижущую силу и по результатам измерений определ ют диффузионную длину носителей тока.A method of measuring the diffusion length of current carriers in germanium and silicon ingots, characterized in that, in order to improve the measurement accuracy, the end of the ingot is illuminated with a light flux, the diameter of which is greater than the diffusion length of current carriers passed through the water silicon through phosphate glass, photoelectromotive force is measured by means of a point probe, light is passed through an infrared interference filter, photoelectromotive force is measured again and measured by results second determining the diffusion length of charge carriers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU607733A SU127334A1 (en) | 1958-09-16 | 1958-09-16 | Method for measuring diffusion length of current carriers in germanium and silicon ingots |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU607733A SU127334A1 (en) | 1958-09-16 | 1958-09-16 | Method for measuring diffusion length of current carriers in germanium and silicon ingots |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU127334A1 true SU127334A1 (en) | 1959-11-30 |
Family
ID=48398589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU607733A SU127334A1 (en) | 1958-09-16 | 1958-09-16 | Method for measuring diffusion length of current carriers in germanium and silicon ingots |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU127334A1 (en) |
-
1958
- 1958-09-16 SU SU607733A patent/SU127334A1/en active
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