SU1134119A3 - Способ наращивани алмаза - Google Patents

Способ наращивани алмаза Download PDF

Info

Publication number
SU1134119A3
SU1134119A3 SU742033730A SU2033730A SU1134119A3 SU 1134119 A3 SU1134119 A3 SU 1134119A3 SU 742033730 A SU742033730 A SU 742033730A SU 2033730 A SU2033730 A SU 2033730A SU 1134119 A3 SU1134119 A3 SU 1134119A3
Authority
SU
USSR - Soviet Union
Prior art keywords
diamond
bombardment
increase
crystals
crystal
Prior art date
Application number
SU742033730A
Other languages
English (en)
Russian (ru)
Inventor
Стюарт Нельсон Ричард
Адриан Хадсон Джон
Джон Мазей Дэвид
Original Assignee
Нэшнл Рисерч Дивелопмент Корпорейшн (Фирма)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Нэшнл Рисерч Дивелопмент Корпорейшн (Фирма) filed Critical Нэшнл Рисерч Дивелопмент Корпорейшн (Фирма)
Application granted granted Critical
Publication of SU1134119A3 publication Critical patent/SU1134119A3/ru

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/25Diamond
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/25Diamond
    • C01B32/26Preparation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00Single-crystal growth directly from the solid state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
SU742033730A 1973-06-07 1974-06-07 Способ наращивани алмаза SU1134119A3 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2729373A GB1476313A (en) 1973-06-07 1973-06-07 Growth of synthetic diamonds

Publications (1)

Publication Number Publication Date
SU1134119A3 true SU1134119A3 (ru) 1985-01-07

Family

ID=10257233

Family Applications (1)

Application Number Title Priority Date Filing Date
SU742033730A SU1134119A3 (ru) 1973-06-07 1974-06-07 Способ наращивани алмаза

Country Status (3)

Country Link
CA (1) CA1026653A (fr)
GB (1) GB1476313A (fr)
SU (1) SU1134119A3 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221411A (en) * 1991-04-08 1993-06-22 North Carolina State University Method for synthesis and processing of continuous monocrystalline diamond thin films
GB201121642D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
1.Патент US № 3175885, кл. 23-209.1, 1965. *

Also Published As

Publication number Publication date
GB1476313A (en) 1977-06-10
CA1026653A (fr) 1978-02-21

Similar Documents

Publication Publication Date Title
US4191735A (en) Growth of synthetic diamonds
JP4873467B2 (ja) オフ角を有する単結晶基板の製造方法
US8048223B2 (en) Grown diamond mosaic separation
US5221411A (en) Method for synthesis and processing of continuous monocrystalline diamond thin films
EP0014528B1 (fr) Procédé pour réduire la couleur des diamants
US20050181210A1 (en) Diamond structure separation
JPS6137205B2 (fr)
SU1134119A3 (ru) Способ наращивани алмаза
Tzeng et al. Free‐standing single‐crystalline chemically vapor deposited diamond films
Ogata et al. Crystallization of carbon films by ion beam assist technology
KR20060120414A (ko) 박층 분리 방법
EP0206603B1 (fr) Méthode de croissance de cristaux
US5198070A (en) Joining diamond bodies
DE102015115961B4 (de) Verfahren zur Herstellung eines einkristallinen SiC-Wafers
JP2679023B2 (ja) ダイヤモンド薄膜堆積用基板の製造方法
JPH0648715A (ja) 半導体ダイヤモンドの製造方法
Albertazzi et al. Monte Carlo simulation of ion implantation in crystalline SiC
JP2608957B2 (ja) ダイヤモンド薄膜堆積用基板の製造方法
JP3637926B2 (ja) ダイアモンド単結晶膜の製造方法
Nelson et al. Improvements in or relating to the growth of synthetic diamonds
JPS6125679B2 (fr)
Withrow et al. Ion beam deposition of β-SiC layers onto α-SiC substrates
JP3479679B2 (ja) 炭化珪素基板とその製造方法
RU2722136C1 (ru) Способ выращивания слоев алмаза на подложке монокристаллического кремния
Patel et al. Thermal etching of CaWO4 crystals