SU1116919A1 - Method of manufacturing silicon transistor structures with dielectric insulation - Google Patents

Method of manufacturing silicon transistor structures with dielectric insulation

Info

Publication number
SU1116919A1
SU1116919A1 SU3359516/25A SU3359516A SU1116919A1 SU 1116919 A1 SU1116919 A1 SU 1116919A1 SU 3359516/25 A SU3359516/25 A SU 3359516/25A SU 3359516 A SU3359516 A SU 3359516A SU 1116919 A1 SU1116919 A1 SU 1116919A1
Authority
SU
USSR - Soviet Union
Prior art keywords
transistor structures
dielectric insulation
manufacturing silicon
silicon transistor
manufacturing
Prior art date
Application number
SU3359516/25A
Other languages
Russian (ru)
Inventor
Н.А. Брюхно
В.И. Громов
О.Н. Данцев
Ю.А. Комаров
Ю.Е. Хочинов
Original Assignee
Н.А. Брюхно
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Н.А. Брюхно filed Critical Н.А. Брюхно
Priority to SU3359516/25A priority Critical patent/SU1116919A1/en
Application granted granted Critical
Publication of SU1116919A1 publication Critical patent/SU1116919A1/en

Links

SU3359516/25A 1981-11-25 1981-11-25 Method of manufacturing silicon transistor structures with dielectric insulation SU1116919A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU3359516/25A SU1116919A1 (en) 1981-11-25 1981-11-25 Method of manufacturing silicon transistor structures with dielectric insulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU3359516/25A SU1116919A1 (en) 1981-11-25 1981-11-25 Method of manufacturing silicon transistor structures with dielectric insulation

Publications (1)

Publication Number Publication Date
SU1116919A1 true SU1116919A1 (en) 1994-04-15

Family

ID=60540871

Family Applications (1)

Application Number Title Priority Date Filing Date
SU3359516/25A SU1116919A1 (en) 1981-11-25 1981-11-25 Method of manufacturing silicon transistor structures with dielectric insulation

Country Status (1)

Country Link
SU (1) SU1116919A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2550090C2 (en) * 2013-03-06 2015-05-10 Открытое Акционерное общество "Научно-исследовательский институт "Гириконд" Thin-film ferroelectric capacitor
RU198255U1 (en) * 2020-03-16 2020-06-29 Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" SILICON STRUCTURE WITH DIELECTRIC INSULATION FOR HIGH VOLTAGE ICs
RU205507U1 (en) * 2021-03-10 2021-07-19 Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" SILICON STRUCTURE WITH DIELECTRIC INSULATION FOR HIGH-VOLTAGE MICROSCIRCUITS IN SMALL CASES

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2550090C2 (en) * 2013-03-06 2015-05-10 Открытое Акционерное общество "Научно-исследовательский институт "Гириконд" Thin-film ferroelectric capacitor
RU198255U1 (en) * 2020-03-16 2020-06-29 Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" SILICON STRUCTURE WITH DIELECTRIC INSULATION FOR HIGH VOLTAGE ICs
RU205507U1 (en) * 2021-03-10 2021-07-19 Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" SILICON STRUCTURE WITH DIELECTRIC INSULATION FOR HIGH-VOLTAGE MICROSCIRCUITS IN SMALL CASES

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