SG97851A1 - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- SG97851A1 SG97851A1 SG200000995A SG200000995A SG97851A1 SG 97851 A1 SG97851 A1 SG 97851A1 SG 200000995 A SG200000995 A SG 200000995A SG 200000995 A SG200000995 A SG 200000995A SG 97851 A1 SG97851 A1 SG 97851A1
- Authority
- SG
- Singapore
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5005099 | 1999-02-26 | ||
JP9330799 | 1999-03-31 | ||
JP11340054A JP2000349172A (ja) | 1999-02-26 | 1999-11-30 | 半導体メモリセル |
Publications (1)
Publication Number | Publication Date |
---|---|
SG97851A1 true SG97851A1 (en) | 2003-08-20 |
Family
ID=27293821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200000995A SG97851A1 (en) | 1999-02-26 | 2000-02-24 | Semiconductor memory device |
Country Status (5)
Country | Link |
---|---|
US (1) | US6240010B1 (ko) |
EP (1) | EP1032044B1 (ko) |
JP (1) | JP2000349172A (ko) |
KR (1) | KR100688314B1 (ko) |
SG (1) | SG97851A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11191596A (ja) * | 1997-04-02 | 1999-07-13 | Sony Corp | 半導体メモリセル及びその製造方法 |
TW461080B (en) * | 1999-04-26 | 2001-10-21 | Sony Corp | Semiconductor memory cell |
KR101862823B1 (ko) * | 2010-02-05 | 2018-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
DE102015121566B4 (de) | 2015-12-10 | 2021-12-09 | Infineon Technologies Ag | Halbleiterbauelemente und eine Schaltung zum Steuern eines Feldeffekttransistors eines Halbleiterbauelements |
CN110354691B (zh) * | 2018-03-26 | 2020-12-18 | 京东方科技集团股份有限公司 | 气体筛选膜及其制造方法和面罩 |
CN116133413B (zh) * | 2022-07-07 | 2023-11-17 | 北京超弦存储器研究院 | 存储器件及其制造方法、电子设备 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3530889A1 (de) * | 1984-09-08 | 1986-03-20 | Plessey Overseas Ltd., Ilford, Essex | Speicherzelle |
US5428238A (en) * | 1992-12-10 | 1995-06-27 | Sony Corporation | Semiconductor memory cell having information storage transistor and switching transistor |
US5689458A (en) * | 1995-06-08 | 1997-11-18 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device having negative resistance element operated stably with single low power source |
US5801993A (en) * | 1996-10-01 | 1998-09-01 | Lg Semicon Co., Ltd. | Nonvolatile memory device |
EP0869511A2 (en) * | 1997-04-02 | 1998-10-07 | Sony Corporation | Semiconductor memory cell and method of manufacturing the same |
US6091077A (en) * | 1996-10-22 | 2000-07-18 | Matsushita Electric Industrial Co., Ltd. | MIS SOI semiconductor device with RTD and/or HET |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5600598A (en) * | 1994-12-14 | 1997-02-04 | Mosaid Technologies Incorporated | Memory cell and wordline driver for embedded DRAM in ASIC process |
US5684737A (en) * | 1995-12-08 | 1997-11-04 | The Regents Of The University Of California | SRAM cell utilizing bistable diode having GeSi structure therein |
JPH09251646A (ja) | 1996-03-15 | 1997-09-22 | Akai Electric Co Ltd | 光ピックアップ装置 |
JP3873396B2 (ja) | 1996-09-27 | 2007-01-24 | ソニー株式会社 | 半導体メモリセル及びその製造方法 |
CA2198839C (en) * | 1997-02-28 | 2004-11-02 | Richard C. Foss | Enhanced asic process cell |
US6075720A (en) * | 1998-08-14 | 2000-06-13 | Monolithic System Tech Inc | Memory cell for DRAM embedded in logic |
-
1999
- 1999-11-30 JP JP11340054A patent/JP2000349172A/ja active Pending
-
2000
- 2000-02-23 US US09/511,969 patent/US6240010B1/en not_active Expired - Lifetime
- 2000-02-24 SG SG200000995A patent/SG97851A1/en unknown
- 2000-02-25 KR KR1020000009495A patent/KR100688314B1/ko not_active IP Right Cessation
- 2000-02-28 EP EP00400524A patent/EP1032044B1/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3530889A1 (de) * | 1984-09-08 | 1986-03-20 | Plessey Overseas Ltd., Ilford, Essex | Speicherzelle |
US5428238A (en) * | 1992-12-10 | 1995-06-27 | Sony Corporation | Semiconductor memory cell having information storage transistor and switching transistor |
US5689458A (en) * | 1995-06-08 | 1997-11-18 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device having negative resistance element operated stably with single low power source |
US5801993A (en) * | 1996-10-01 | 1998-09-01 | Lg Semicon Co., Ltd. | Nonvolatile memory device |
US6091077A (en) * | 1996-10-22 | 2000-07-18 | Matsushita Electric Industrial Co., Ltd. | MIS SOI semiconductor device with RTD and/or HET |
EP0869511A2 (en) * | 1997-04-02 | 1998-10-07 | Sony Corporation | Semiconductor memory cell and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
EP1032044B1 (en) | 2012-08-22 |
JP2000349172A (ja) | 2000-12-15 |
EP1032044A3 (en) | 2009-06-10 |
KR20000076739A (ko) | 2000-12-26 |
EP1032044A2 (en) | 2000-08-30 |
KR100688314B1 (ko) | 2007-02-28 |
US6240010B1 (en) | 2001-05-29 |
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