SG96273A1 - Method for fabricating iii-v compound semiconductor - Google Patents

Method for fabricating iii-v compound semiconductor

Info

Publication number
SG96273A1
SG96273A1 SG200200035A SG200200035A SG96273A1 SG 96273 A1 SG96273 A1 SG 96273A1 SG 200200035 A SG200200035 A SG 200200035A SG 200200035 A SG200200035 A SG 200200035A SG 96273 A1 SG96273 A1 SG 96273A1
Authority
SG
Singapore
Prior art keywords
compound semiconductor
fabricating iii
fabricating
iii
semiconductor
Prior art date
Application number
SG200200035A
Other languages
English (en)
Inventor
Ono Yoshinobu
Hata Masahiko
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of SG96273A1 publication Critical patent/SG96273A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
SG200200035A 2001-01-17 2002-01-04 Method for fabricating iii-v compound semiconductor SG96273A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001009144A JP2002217105A (ja) 2001-01-17 2001-01-17 ３−５族化合物半導体の製造方法

Publications (1)

Publication Number Publication Date
SG96273A1 true SG96273A1 (en) 2003-05-23

Family

ID=18876677

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200200035A SG96273A1 (en) 2001-01-17 2002-01-04 Method for fabricating iii-v compound semiconductor

Country Status (6)

Country Link
US (1) US6864159B2 (fr)
EP (1) EP1225256A2 (fr)
JP (1) JP2002217105A (fr)
KR (1) KR100852609B1 (fr)
SG (1) SG96273A1 (fr)
TW (1) TW526565B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004140038A (ja) * 2002-10-15 2004-05-13 Sumitomo Chem Co Ltd 薄膜結晶ウェーハの製造方法及び半導体デバイス並びにその製造方法
US20110204483A1 (en) * 2004-06-25 2011-08-25 Mcnally Patrick Electroluminescent device for the production of ultra-violet light
CN103735560A (zh) * 2005-06-07 2014-04-23 耶鲁大学 使用克来夫定和替比夫定治疗癌症和其它病症或疾病状态的方法
JP4922619B2 (ja) * 2006-01-30 2012-04-25 シャープ株式会社 半導体レーザ素子
JP4605291B2 (ja) * 2008-06-03 2011-01-05 住友電気工業株式会社 ＡｌｘＧａ（１−ｘ）Ａｓ基板、赤外ＬＥＤ用のエピタキシャルウエハ、赤外ＬＥＤ、ＡｌｘＧａ（１−ｘ）Ａｓ基板の製造方法、赤外ＬＥＤ用のエピタキシャルウエハの製造方法および赤外ＬＥＤの製造方法
US10903267B2 (en) * 2019-04-04 2021-01-26 Bor-Jen Wu System and method for making micro LED display

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
US4835583A (en) * 1985-08-30 1989-05-30 Hitachi, Ltd. Semiconductor device having strained superlattice buffer layers with In-doped GaAs substrate
US5332451A (en) * 1991-04-30 1994-07-26 Sumitomo Chemical Company, Limited Epitaxially grown compound-semiconductor crystal
US5491106A (en) * 1990-11-26 1996-02-13 Sharp Kabushiki Kaisha Method for growing a compound semiconductor and a method for producing a semiconductor laser

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4426701A (en) * 1981-12-23 1984-01-17 Rca Corporation Constricted double heterostructure semiconductor laser
US5216684A (en) * 1990-09-07 1993-06-01 Massachusetts Institute Of Technology Reliable alingaas/algaas strained-layer diode lasers
JPH06349925A (ja) * 1993-06-07 1994-12-22 Mitsubishi Electric Corp エピタキシャル成長層の評価方法及びプロセス評価用テストパターン構造
JPH0738194A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
US5639674A (en) * 1994-03-14 1997-06-17 Kabushiki Kaisha Toshiba Semiconductor light-emitting element and method for manufacturing therefor
JPH08241896A (ja) 1995-03-06 1996-09-17 Toshiba Corp ヘテロ接合バイポーラトランジスタ（ｈｂｔ）
JP3429407B2 (ja) * 1996-01-19 2003-07-22 シャープ株式会社 半導体レーザ装置およびその製造方法
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3974002A (en) * 1974-06-10 1976-08-10 Bell Telephone Laboratories, Incorporated MBE growth: gettering contaminants and fabricating heterostructure junction lasers
US4835583A (en) * 1985-08-30 1989-05-30 Hitachi, Ltd. Semiconductor device having strained superlattice buffer layers with In-doped GaAs substrate
US5491106A (en) * 1990-11-26 1996-02-13 Sharp Kabushiki Kaisha Method for growing a compound semiconductor and a method for producing a semiconductor laser
US5332451A (en) * 1991-04-30 1994-07-26 Sumitomo Chemical Company, Limited Epitaxially grown compound-semiconductor crystal

Also Published As

Publication number Publication date
KR20020062172A (ko) 2002-07-25
JP2002217105A (ja) 2002-08-02
US6864159B2 (en) 2005-03-08
TW526565B (en) 2003-04-01
KR100852609B1 (ko) 2008-08-18
EP1225256A2 (fr) 2002-07-24
US20020132453A1 (en) 2002-09-19

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