SG87112A1 - Gas distribution system - Google Patents

Gas distribution system

Info

Publication number
SG87112A1
SG87112A1 SG200002470A SG200002470A SG87112A1 SG 87112 A1 SG87112 A1 SG 87112A1 SG 200002470 A SG200002470 A SG 200002470A SG 200002470 A SG200002470 A SG 200002470A SG 87112 A1 SG87112 A1 SG 87112A1
Authority
SG
Singapore
Prior art keywords
distribution system
gas distribution
gas
distribution
Prior art date
Application number
SG200002470A
Other languages
English (en)
Inventor
Duane Bartholomew Lawrence
K Yuh Soon
Mark Stumbo Gregory
B King Mark
Chan Jeffrey
Original Assignee
Silicon Valley Group Thermal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Valley Group Thermal filed Critical Silicon Valley Group Thermal
Publication of SG87112A1 publication Critical patent/SG87112A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
SG200002470A 1999-05-17 2000-05-09 Gas distribution system SG87112A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13444399P 1999-05-17 1999-05-17
US09/494,620 US20010047756A1 (en) 1999-05-17 2000-01-31 Gas distribution system

Publications (1)

Publication Number Publication Date
SG87112A1 true SG87112A1 (en) 2002-03-19

Family

ID=26832336

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200002470A SG87112A1 (en) 1999-05-17 2000-05-09 Gas distribution system

Country Status (8)

Country Link
US (2) US20010047756A1 (ja)
EP (1) EP1054076A3 (ja)
JP (1) JP3492596B2 (ja)
KR (1) KR100341521B1 (ja)
CN (1) CN1157496C (ja)
CA (1) CA2308832A1 (ja)
SG (1) SG87112A1 (ja)
TW (1) TW495558B (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020134507A1 (en) * 1999-12-22 2002-09-26 Silicon Valley Group, Thermal Systems Llc Gas delivery metering tube
TWI287587B (en) * 2001-08-24 2007-10-01 Asml Us Inc Protective shield and system for gas distribution
US6843882B2 (en) * 2002-07-15 2005-01-18 Applied Materials, Inc. Gas flow control in a wafer processing system having multiple chambers for performing same process
US20050223984A1 (en) * 2004-04-08 2005-10-13 Hee-Gyoun Lee Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US20050223983A1 (en) * 2004-04-08 2005-10-13 Venkat Selvamanickam Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
KR101309334B1 (ko) * 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터
US7387811B2 (en) * 2004-09-21 2008-06-17 Superpower, Inc. Method for manufacturing high temperature superconducting conductors using chemical vapor deposition (CVD)
JP4560394B2 (ja) * 2004-12-13 2010-10-13 長州産業株式会社 薄膜形成用分子供給装置
CN102084460A (zh) * 2008-05-30 2011-06-01 奥塔装置公司 用于化学气相沉积反应器的方法和设备
JP2009295800A (ja) * 2008-06-05 2009-12-17 Komatsu Ltd Ｅｕｖ光発生装置における集光ミラーのクリーニング方法および装置
US20100018463A1 (en) * 2008-07-24 2010-01-28 Chen-Hua Yu Plural Gas Distribution System
CN101812674B (zh) * 2010-01-07 2011-08-31 中国科学院半导体研究所 用于金属有机物化学沉积设备的气体分配装置
FI124113B (fi) * 2010-08-30 2014-03-31 Beneq Oy Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
KR101932250B1 (ko) 2011-06-30 2019-03-20 어플라이드 머티어리얼스, 인코포레이티드 고속 가스 교환, 고속 가스 전환 및 프로그램 가능한 가스 전달을 위한 방법 및 장치
CN103060775B (zh) * 2013-01-30 2014-12-03 中国科学院苏州纳米技术与纳米仿生研究所 用于cvd设备的多面漏斗型进气装置及cvd设备
US9490149B2 (en) * 2013-07-03 2016-11-08 Lam Research Corporation Chemical deposition apparatus having conductance control
US10704144B2 (en) 2015-10-12 2020-07-07 Universal Display Corporation Apparatus and method for printing multilayer organic thin films from vapor phase in an ultra-pure gas ambient
CN107400879B (zh) * 2017-08-01 2019-04-05 成都天马微电子有限公司 一种显示面板成膜设备及方法
CN112663027B (zh) * 2020-12-02 2023-04-25 鑫天虹(厦门)科技有限公司 可减少前驱物沉积的原子层沉积设备与制程方法
CN112695299B (zh) * 2020-12-15 2023-01-20 长江先进存储产业创新中心有限责任公司 沉积装置及方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4834020A (en) * 1987-12-04 1989-05-30 Watkins-Johnson Company Atmospheric pressure chemical vapor deposition apparatus
EP0637058A1 (en) * 1993-07-30 1995-02-01 Applied Materials, Inc. Gas inlets for wafer processing chamber
US5944900A (en) * 1997-02-13 1999-08-31 Watkins Johnson Company Protective gas shield for chemical vapor deposition apparatus
WO2000049197A1 (en) * 1999-02-02 2000-08-24 Silicon Valley Group, Thermal Systems Llc Wafer processing reactor having a gas flow control system and method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8824104D0 (en) * 1988-10-14 1988-11-23 Pilkington Plc Process for coating glass
TW359943B (en) * 1994-07-18 1999-06-01 Silicon Valley Group Thermal Single body injector and method for delivering gases to a surface
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
US5849088A (en) * 1998-01-16 1998-12-15 Watkins-Johnson Company Free floating shield
US6056824A (en) 1998-01-16 2000-05-02 Silicon Valley Group Thermal Systems Free floating shield and semiconductor processing system
JP2938070B1 (ja) 1998-09-22 1999-08-23 九州日本電気株式会社 常圧ｃｖｄ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4834020A (en) * 1987-12-04 1989-05-30 Watkins-Johnson Company Atmospheric pressure chemical vapor deposition apparatus
EP0637058A1 (en) * 1993-07-30 1995-02-01 Applied Materials, Inc. Gas inlets for wafer processing chamber
US5944900A (en) * 1997-02-13 1999-08-31 Watkins Johnson Company Protective gas shield for chemical vapor deposition apparatus
WO2000049197A1 (en) * 1999-02-02 2000-08-24 Silicon Valley Group, Thermal Systems Llc Wafer processing reactor having a gas flow control system and method

Also Published As

Publication number Publication date
KR100341521B1 (ko) 2002-06-22
EP1054076A2 (en) 2000-11-22
TW495558B (en) 2002-07-21
CN1274768A (zh) 2000-11-29
CA2308832A1 (en) 2000-11-17
JP3492596B2 (ja) 2004-02-03
EP1054076A3 (en) 2003-04-02
CN1157496C (zh) 2004-07-14
JP2001011636A (ja) 2001-01-16
US20020192377A1 (en) 2002-12-19
US20010047756A1 (en) 2001-12-06
KR20010039608A (ko) 2001-05-15

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