SG87073A1 - Integrated circuit device with composite oxide dielectric - Google Patents

Integrated circuit device with composite oxide dielectric

Info

Publication number
SG87073A1
SG87073A1 SG200000093A SG200000093A SG87073A1 SG 87073 A1 SG87073 A1 SG 87073A1 SG 200000093 A SG200000093 A SG 200000093A SG 200000093 A SG200000093 A SG 200000093A SG 87073 A1 SG87073 A1 SG 87073A1
Authority
SG
Singapore
Prior art keywords
integrated circuit
circuit device
composite oxide
oxide dielectric
dielectric
Prior art date
Application number
SG200000093A
Other languages
English (en)
Inventor
Mansinh Merchant Sailesh
Kumar Roy Pradip
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of SG87073A1 publication Critical patent/SG87073A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
SG200000093A 1999-01-13 2000-01-10 Integrated circuit device with composite oxide dielectric SG87073A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11576999P 1999-01-13 1999-01-13
US09/344,785 US20010013616A1 (en) 1999-01-13 1999-06-25 Integrated circuit device with composite oxide dielectric

Publications (1)

Publication Number Publication Date
SG87073A1 true SG87073A1 (en) 2002-03-19

Family

ID=26813545

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200000093A SG87073A1 (en) 1999-01-13 2000-01-10 Integrated circuit device with composite oxide dielectric

Country Status (6)

Country Link
US (1) US20010013616A1 (de)
EP (1) EP1020896A1 (de)
JP (1) JP2000208742A (de)
KR (1) KR20000053449A (de)
SG (1) SG87073A1 (de)
TW (1) TW439175B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6235594B1 (en) * 1999-01-13 2001-05-22 Agere Systems Guardian Corp. Methods of fabricating an integrated circuit device with composite oxide dielectric
US6927435B2 (en) * 2001-01-16 2005-08-09 Renesas Technology Corp. Semiconductor device and its production process
KR100947463B1 (ko) * 2007-08-31 2010-03-17 에스엔유 프리시젼 주식회사 엘시디를 이용한 삼차원 형상 측정장치
US9595593B2 (en) * 2015-06-29 2017-03-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with interfacial layer and method for manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153701A (en) * 1987-12-28 1992-10-06 At&T Bell Laboratories Semiconductor device with low defect density oxide
US5688724A (en) * 1992-07-02 1997-11-18 National Semiconductor Corporation Method of providing a dielectric structure for semiconductor devices
US5780115A (en) * 1996-02-29 1998-07-14 Samsung Electronics Co., Ltd. Methods for fabricating electrode structures including oxygen and nitrogen plasma treatments

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930012120B1 (ko) * 1991-07-03 1993-12-24 삼성전자 주식회사 반도체장치 및 그의 제조방법
JPH05198743A (ja) * 1992-01-20 1993-08-06 Mitsubishi Electric Corp 半導体装置
US5569619A (en) * 1992-06-24 1996-10-29 Lg Semicon Co., Ltd. Method for forming a capacitor of a semiconductor memory cell
JP3141553B2 (ja) * 1992-08-06 2001-03-05 日本電気株式会社 半導体装置の製造方法
US5348894A (en) * 1993-01-27 1994-09-20 Texas Instruments Incorporated Method of forming electrical connections to high dielectric constant materials
JP2679599B2 (ja) * 1993-12-02 1997-11-19 日本電気株式会社 半導体装置の製造方法
EP0851473A3 (de) * 1996-12-23 1998-07-22 Lucent Technologies Inc. Methode zur Herstellung einer Schicht mit hoher Dielektrizitätskonstante, Gate- und Kondensator-Isolationsschicht und ihre Anwendung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153701A (en) * 1987-12-28 1992-10-06 At&T Bell Laboratories Semiconductor device with low defect density oxide
US5688724A (en) * 1992-07-02 1997-11-18 National Semiconductor Corporation Method of providing a dielectric structure for semiconductor devices
US5780115A (en) * 1996-02-29 1998-07-14 Samsung Electronics Co., Ltd. Methods for fabricating electrode structures including oxygen and nitrogen plasma treatments

Also Published As

Publication number Publication date
KR20000053449A (ko) 2000-08-25
JP2000208742A (ja) 2000-07-28
TW439175B (en) 2001-06-07
EP1020896A1 (de) 2000-07-19
US20010013616A1 (en) 2001-08-16

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