SG83786A1 - Spin valve sensor having improved interface between pinning layer and pinned layer structure - Google Patents

Spin valve sensor having improved interface between pinning layer and pinned layer structure

Info

Publication number
SG83786A1
SG83786A1 SG200002003A SG200002003A SG83786A1 SG 83786 A1 SG83786 A1 SG 83786A1 SG 200002003 A SG200002003 A SG 200002003A SG 200002003 A SG200002003 A SG 200002003A SG 83786 A1 SG83786 A1 SG 83786A1
Authority
SG
Singapore
Prior art keywords
spin valve
valve sensor
improved interface
layer structure
pinned layer
Prior art date
Application number
SG200002003A
Other languages
English (en)
Inventor
Pinarbasi Mustafa
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG83786A1 publication Critical patent/SG83786A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/012—Recording on, or reproducing or erasing from, magnetic disks

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
SG200002003A 1999-04-26 2000-04-07 Spin valve sensor having improved interface between pinning layer and pinned layer structure SG83786A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/299,336 US6201672B1 (en) 1999-04-26 1999-04-26 Spin valve sensor having improved interface between pinning layer and pinned layer structure

Publications (1)

Publication Number Publication Date
SG83786A1 true SG83786A1 (en) 2001-10-16

Family

ID=23154356

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200002003A SG83786A1 (en) 1999-04-26 2000-04-07 Spin valve sensor having improved interface between pinning layer and pinned layer structure

Country Status (7)

Country Link
US (1) US6201672B1 (ja)
JP (1) JP3357649B2 (ja)
KR (1) KR100361355B1 (ja)
CN (1) CN1133978C (ja)
GB (1) GB2351597B (ja)
MY (1) MY120604A (ja)
SG (1) SG83786A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124541A (ja) 2001-10-12 2003-04-25 Nec Corp 交換結合膜、磁気抵抗効果素子、磁気ヘッド及び磁気ランダムアクセスメモリ
US6977801B2 (en) * 2003-02-24 2005-12-20 Hitachi Global Storage Technologies Netherlands B.V. Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer
JP4082711B2 (ja) 2004-03-12 2008-04-30 独立行政法人科学技術振興機構 磁気抵抗素子及びその製造方法
JP4292128B2 (ja) * 2004-09-07 2009-07-08 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法
CN100392421C (zh) * 2004-11-10 2008-06-04 中国科学院物理研究所 用于电流过载保护器的开关型磁场传感器
US9175358B2 (en) * 2009-11-11 2015-11-03 Carbo-UA Limited Compositions and processes for sugar treatment
US8508221B2 (en) 2010-08-30 2013-08-13 Everspin Technologies, Inc. Two-axis magnetic field sensor having reduced compensation angle for zero offset
CN103424131B (zh) * 2013-08-26 2015-08-05 电子科技大学 一种垂直偏置磁传感单元的制备方法
CN105989857B (zh) * 2015-01-30 2020-04-07 希捷科技有限公司 合成反铁磁读取器
CN105954692A (zh) * 2016-04-26 2016-09-21 中国科学院物理研究所 具有改善的灵敏度和线性度的磁传感器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3362818B2 (ja) * 1995-08-11 2003-01-07 富士通株式会社 スピンバルブ磁気抵抗効果型トランスジューサ及び磁気記録装置
JPH0983039A (ja) * 1995-09-14 1997-03-28 Nec Corp 磁気抵抗効果素子
US5909345A (en) * 1996-02-22 1999-06-01 Matsushita Electric Industrial Co., Ltd. Magnetoresistive device and magnetoresistive head
JPH1174121A (ja) * 1997-08-29 1999-03-16 Nec Corp 磁気抵抗効果膜並びにこれを利用した磁気抵抗効果センサ及び磁気記憶装置
US6061210A (en) * 1997-09-22 2000-05-09 International Business Machines Corporation Antiparallel pinned spin valve with high magnetic stability
US6038107A (en) * 1997-10-27 2000-03-14 International Business Machines Corporation Antiparallel-pinned spin valve sensor
US6040961A (en) * 1997-10-27 2000-03-21 International Business Machines Corporation Current-pinned, current resettable soft AP-pinned spin valve sensor
US6108177A (en) * 1998-11-19 2000-08-22 International Business Machines Corporation Tunnel junction structure with FeX ferromagnetic layers

Also Published As

Publication number Publication date
GB2351597B (en) 2003-08-06
US6201672B1 (en) 2001-03-13
CN1133978C (zh) 2004-01-07
JP3357649B2 (ja) 2002-12-16
CN1271927A (zh) 2000-11-01
KR20010014763A (ko) 2001-02-26
MY120604A (en) 2005-11-30
GB0009809D0 (en) 2000-06-07
JP2000315305A (ja) 2000-11-14
KR100361355B1 (ko) 2002-11-18
GB2351597A (en) 2001-01-03

Similar Documents

Publication Publication Date Title
SG85191A1 (en) Mutilayered pinned layer structure for improved coupling field and gmr for spin valve sensors
SG87173A1 (en) Trilayer seed layer structure for spin valve sensor
SG97817A1 (en) Antiparallel (ap) pinned spin valve sensor with giant magnetoresistive (gmr) enhancing layer
DE10085145T1 (de) Spin-Ventil-Sensor
SG99922A1 (en) Giant magnetoresistive sensor with an ap-coupled low hk free layer
GB2372999B (en) Barrier-forming film and manufacturing method
SG43377A1 (en) Spin valve sensor with antiparallel magnetization of pinned layers
SG71855A1 (en) Improved antiparallel-pinned spin valve sensor
EP1178705A4 (en) SUBSTRATE COMPOSITE AND ELECTROLUMINESCENT ELEMENT THEREOF COMPRISING
SG60098A1 (en) Differential spin valve sensor structure
EP1151482A4 (en) SPIN-DEPENDENT TUNNEL EFFECT-USING SENSOR
SG76599A1 (en) Tunneling magnetoresistance element and magnetic sensor magnetic head and magnetic memory using the element
SG63839A1 (en) Antiparallel pinned spin valve with read signal symmetry
AU1604202A (en) Freeze-dried pantoprazole preparation and pantoprazole injection
GB0100169D0 (en) Method for making an interconnect layer and a semiconductor device including the same
SG53025A1 (en) Magnetizations of pinned and free layers of a spin valve sensor set by sense current fields
GB2363671B (en) Giant magnetoresistive sensor with pinning layer
EP1055920A4 (en) SEMICONDUCTOR PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE SAME
GB0320095D0 (en) Magnetic detecting element having -valves selected for free magnetic layer and pinned magnetic layer
SG83786A1 (en) Spin valve sensor having improved interface between pinning layer and pinned layer structure
SG97218A1 (en) Lead overlaid type of sensor with sensor passive regions pinned
SG84539A1 (en) Spin valve head with diffusion barrier
SG90258A1 (en) Solid state imager having gated photodiodes and method for making same
SG100636A1 (en) Gmr coefficient enhancement of a spin valve structure
EP1284412A4 (en) DETECTION ELEMENT AND METHOD OF MANUFACTURING