SG73604A1 - Modifiable semiconductor circuit element - Google Patents

Modifiable semiconductor circuit element

Info

Publication number
SG73604A1
SG73604A1 SG9900072A SG1999000072A SG73604A1 SG 73604 A1 SG73604 A1 SG 73604A1 SG 9900072 A SG9900072 A SG 9900072A SG 1999000072 A SG1999000072 A SG 1999000072A SG 73604 A1 SG73604 A1 SG 73604A1
Authority
SG
Singapore
Prior art keywords
circuit element
semiconductor circuit
modifiable
modifiable semiconductor
semiconductor
Prior art date
Application number
SG9900072A
Other languages
English (en)
Inventor
R Woods Paul
J Perez Ignacio
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of SG73604A1 publication Critical patent/SG73604A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
SG9900072A 1998-09-28 1999-01-13 Modifiable semiconductor circuit element SG73604A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/162,629 US6252291B1 (en) 1998-09-28 1998-09-28 Modifiable semiconductor circuit element

Publications (1)

Publication Number Publication Date
SG73604A1 true SG73604A1 (en) 2002-01-15

Family

ID=22586456

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9900072A SG73604A1 (en) 1998-09-28 1999-01-13 Modifiable semiconductor circuit element

Country Status (6)

Country Link
US (1) US6252291B1 (ja)
EP (1) EP0991125A1 (ja)
JP (1) JP2000114378A (ja)
KR (1) KR100380516B1 (ja)
CN (1) CN1249538A (ja)
SG (1) SG73604A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323534B1 (en) 1999-04-16 2001-11-27 Micron Technology, Inc. Fuse for use in a semiconductor device
US6492205B1 (en) * 2000-12-26 2002-12-10 Taiwan Semiconductor Manufacturing Company Utilization of macro power routing area for buffer insertion
CN103606547B (zh) * 2013-11-29 2016-11-02 深圳市德赛微电子技术有限公司 一种带激光修调工艺的集成电路版图结构及集成芯片

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020116A1 (en) * 1979-05-24 1980-12-10 Fujitsu Limited Masterslice semiconductor device and method of producing it
EP0408060A2 (en) * 1989-07-14 1991-01-16 Hitachi, Ltd. Semiconductor integrated circuit device and logic correcting method of the same
US5360988A (en) * 1991-06-27 1994-11-01 Hitachi, Ltd. Semiconductor integrated circuit device and methods for production thereof
EP0661329A2 (de) * 1993-12-27 1995-07-05 Hüls Silicone Gesellschaft mit beschränkter Haftung Flüssige Polysiloxane

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5675174A (en) * 1993-01-06 1997-10-07 Rohm Co., Ltd. Method for using fuse structure in semiconductor device
IL109491A (en) 1994-05-01 1999-11-30 Quick Tech Ltd Customizable logic array device
JP3375447B2 (ja) * 1995-02-07 2003-02-10 富士通株式会社 半導体装置
US5659201A (en) * 1995-06-05 1997-08-19 Advanced Micro Devices, Inc. High conductivity interconnection line
US5900668A (en) * 1995-11-30 1999-05-04 Advanced Micro Devices, Inc. Low capacitance interconnection
WO1997036330A1 (en) * 1996-03-28 1997-10-02 Intel Corporation Memory cell design with vertically stacked crossovers
US5764563A (en) * 1996-09-30 1998-06-09 Vlsi Technology, Inc. Thin film load structure
JPH11154706A (ja) * 1997-11-20 1999-06-08 Mitsubishi Electric Corp 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020116A1 (en) * 1979-05-24 1980-12-10 Fujitsu Limited Masterslice semiconductor device and method of producing it
EP0408060A2 (en) * 1989-07-14 1991-01-16 Hitachi, Ltd. Semiconductor integrated circuit device and logic correcting method of the same
US5360988A (en) * 1991-06-27 1994-11-01 Hitachi, Ltd. Semiconductor integrated circuit device and methods for production thereof
EP0661329A2 (de) * 1993-12-27 1995-07-05 Hüls Silicone Gesellschaft mit beschränkter Haftung Flüssige Polysiloxane

Also Published As

Publication number Publication date
KR20000023381A (ko) 2000-04-25
US6252291B1 (en) 2001-06-26
EP0991125A1 (en) 2000-04-05
KR100380516B1 (ko) 2003-04-14
CN1249538A (zh) 2000-04-05
JP2000114378A (ja) 2000-04-21

Similar Documents

Publication Publication Date Title
EP1043774A4 (en) SEMICONDUCTOR INTEGRATED CIRCUIT
GB2335792B (en) Opto-electronic integrated circuit
IL123207A0 (en) Integrated circuit device
GB9920418D0 (en) Semiconductor devices
DE69943120D1 (de) Integrierte Halbleiterschaltung
SG48526A1 (en) Semiconductor integrated circuit
DE69927658D1 (de) Integrierte Halbleiterschaltung
GB9911467D0 (en) Semiconductor devices
GB2344461B (en) Semiconductor devices
DE1100202T1 (de) Entschachtelungsschaltung
GB2341275B (en) Semiconductor devices
GB2344456B (en) Semiconductor devices
DK26798A (da) Elektrisk kredsløb
DE69912101D1 (de) Schaltungsanordnung
GB9826516D0 (en) Semiconductor devices
DE59913873D1 (de) Fuselatch-Schaltung
GB2344457B (en) Semiconductor devices
SG73604A1 (en) Modifiable semiconductor circuit element
GB2337346B (en) Integrated circuit routing
GB2338128B (en) Circuit arrangement
GB9823778D0 (en) Semiconductor devices
DE59914101D1 (de) Halbleiter-schaltungsanordnung
GB2335578B (en) Add-compare selection circuit
DE19882676T1 (de) Integrierte Schaltung
GB2337616B (en) Integrated circuit