SG63825A1 - In situ monitoring of contaminants in semiconductor processing chambers - Google Patents

In situ monitoring of contaminants in semiconductor processing chambers

Info

Publication number
SG63825A1
SG63825A1 SG1998000539A SG1998000539A SG63825A1 SG 63825 A1 SG63825 A1 SG 63825A1 SG 1998000539 A SG1998000539 A SG 1998000539A SG 1998000539 A SG1998000539 A SG 1998000539A SG 63825 A1 SG63825 A1 SG 63825A1
Authority
SG
Singapore
Prior art keywords
contaminants
semiconductor processing
processing chambers
situ monitoring
situ
Prior art date
Application number
SG1998000539A
Other languages
English (en)
Inventor
Imran Hashim
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG63825A1 publication Critical patent/SG63825A1/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004Gaseous mixtures, e.g. polluted air
    • G01N33/0009General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0031General constructional details of gas analysers, e.g. portable test equipment concerning the detector comprising two or more sensors, e.g. a sensor array
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0095Semiconductive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Pathology (AREA)
  • Combustion & Propulsion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
SG1998000539A 1997-03-11 1998-03-10 In situ monitoring of contaminants in semiconductor processing chambers SG63825A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81456597A 1997-03-11 1997-03-11

Publications (1)

Publication Number Publication Date
SG63825A1 true SG63825A1 (en) 1999-03-30

Family

ID=25215446

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998000539A SG63825A1 (en) 1997-03-11 1998-03-10 In situ monitoring of contaminants in semiconductor processing chambers

Country Status (5)

Country Link
EP (1) EP0877246A3 (ko)
JP (1) JPH10335249A (ko)
KR (1) KR19980080105A (ko)
SG (1) SG63825A1 (ko)
TW (1) TW393676B (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW460942B (en) 1999-08-31 2001-10-21 Mitsubishi Material Silicon CVD device, purging method, method for determining maintenance time for a semiconductor making device, moisture content monitoring device, and semiconductor making device with such moisture content monitoring device
JP3495965B2 (ja) * 2000-02-28 2004-02-09 三菱住友シリコン株式会社 水分モニタリング装置およびこれを備えた半導体製造装置
JP3326559B2 (ja) * 1999-08-31 2002-09-24 日本酸素株式会社 Cvd装置及びそのパージ方法
FR2804508A1 (fr) * 2000-02-01 2001-08-03 Air Liquide Procede et dispositif d'echantillonnage de gaz optimalise
TW476996B (en) 2000-02-28 2002-02-21 Mitsubishi Material Silicon Semiconductor manufacturing method and semiconductor manufacturing apparatus
WO2007099490A1 (en) * 2006-02-28 2007-09-07 Nxp B.V. Processing assembly and method for processing a batch of wafers
JP4933414B2 (ja) * 2007-12-11 2012-05-16 大陽日酸株式会社 化合物薄膜半導体製造装置並びにアンモニアガスの供給装置及び方法
KR101689148B1 (ko) * 2010-12-01 2017-01-02 주성엔지니어링(주) 소스 공급 장치 및 소스 공급 장치의 배관 내부를 퍼지하는 방법
JP5554252B2 (ja) * 2011-01-20 2014-07-23 株式会社東芝 半導体製造装置およびそのクリーニング方法
TWI654695B (zh) 2012-12-06 2019-03-21 英福康公司 真空工具及測量該真空工具的客真空室中的氛圍的方法
KR20240085083A (ko) 2022-12-07 2024-06-14 대전대학교 산학협력단 폴리머 오염감지장치 및 이를 구비한 반도체 공정장비
CN117129636B (zh) * 2023-10-23 2024-01-26 中用科技有限公司 一种面向半导体制造的气态分子污染物在线监测系统

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2825172B2 (ja) * 1992-07-10 1998-11-18 東京エレクトロン株式会社 減圧処理装置および減圧処理方法
US5339675A (en) * 1992-10-08 1994-08-23 Millipore Corporation Apparatus for monitoring impurities in a gas stream
JP2906006B2 (ja) * 1992-10-15 1999-06-14 東京エレクトロン株式会社 処理方法及びその装置

Also Published As

Publication number Publication date
EP0877246A3 (en) 2002-01-09
JPH10335249A (ja) 1998-12-18
TW393676B (en) 2000-06-11
EP0877246A2 (en) 1998-11-11
KR19980080105A (ko) 1998-11-25

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