SG60123A1 - Improved darkspace shield for improved rf transmission in inductively coupled plasma sources for sputter deposition - Google Patents
Improved darkspace shield for improved rf transmission in inductively coupled plasma sources for sputter depositionInfo
- Publication number
- SG60123A1 SG60123A1 SG1997003673A SG1997003673A SG60123A1 SG 60123 A1 SG60123 A1 SG 60123A1 SG 1997003673 A SG1997003673 A SG 1997003673A SG 1997003673 A SG1997003673 A SG 1997003673A SG 60123 A1 SG60123 A1 SG 60123A1
- Authority
- SG
- Singapore
- Prior art keywords
- improved
- transmission
- inductively coupled
- coupled plasma
- sputter deposition
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3327—Coating high aspect ratio workpieces
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Plasma Technology (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/730,722 US6254737B1 (en) | 1996-10-08 | 1996-10-08 | Active shield for generating a plasma for sputtering |
US08/856,421 US6190513B1 (en) | 1997-05-14 | 1997-05-14 | Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG60123A1 true SG60123A1 (en) | 1999-02-22 |
Family
ID=27112098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1997003673A SG60123A1 (en) | 1996-10-08 | 1997-10-06 | Improved darkspace shield for improved rf transmission in inductively coupled plasma sources for sputter deposition |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0841683A3 (fr) |
JP (1) | JPH10229056A (fr) |
KR (1) | KR19980032632A (fr) |
SG (1) | SG60123A1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6178920B1 (en) * | 1997-06-05 | 2001-01-30 | Applied Materials, Inc. | Plasma reactor with internal inductive antenna capable of generating helicon wave |
JP4249843B2 (ja) * | 1999-04-12 | 2009-04-08 | 憲一 高木 | プラズマ処理装置 |
DE69907687T2 (de) * | 1999-11-17 | 2004-03-11 | European Community (Ec) | Plasmabearbeitungsvorrichtung mit elektrisch leitender Wand |
JP4656697B2 (ja) * | 2000-06-16 | 2011-03-23 | キヤノンアネルバ株式会社 | 高周波スパッタリング装置 |
US7399943B2 (en) | 2004-10-05 | 2008-07-15 | Applied Materials, Inc. | Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece |
US7214619B2 (en) | 2004-10-05 | 2007-05-08 | Applied Materials, Inc. | Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece |
US7244344B2 (en) | 2005-02-03 | 2007-07-17 | Applied Materials, Inc. | Physical vapor deposition plasma reactor with VHF source power applied through the workpiece |
KR101511027B1 (ko) * | 2008-05-02 | 2015-04-10 | 어플라이드 머티어리얼스, 인코포레이티드 | Rf물리 기상 증착용 프로세스 키트 |
US8702918B2 (en) | 2011-12-15 | 2014-04-22 | Applied Materials, Inc. | Apparatus for enabling concentricity of plasma dark space |
US9404174B2 (en) | 2011-12-15 | 2016-08-02 | Applied Materials, Inc. | Pinned target design for RF capacitive coupled plasma |
JP6876326B2 (ja) * | 2017-03-27 | 2021-05-26 | 株式会社昭和真空 | 電子ビーム発生装置およびコレクタ電極 |
JP7224621B2 (ja) * | 2018-10-19 | 2023-02-20 | サムコ株式会社 | 誘導結合型プラズマ処理装置の防着板 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58171822A (ja) * | 1982-03-31 | 1983-10-08 | Matsushita Electric Ind Co Ltd | ドライエツチング方法 |
DE4235064A1 (de) * | 1992-10-17 | 1994-04-21 | Leybold Ag | Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung |
US5665167A (en) * | 1993-02-16 | 1997-09-09 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus having a workpiece-side electrode grounding circuit |
JPH06244151A (ja) * | 1993-02-16 | 1994-09-02 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH07169590A (ja) * | 1993-09-16 | 1995-07-04 | Fujitsu Ltd | 電子密度の測定方法及びその装置及び電子密度の制御装置及びプラズマ処理装置 |
US5540800A (en) * | 1994-06-23 | 1996-07-30 | Applied Materials, Inc. | Inductively coupled high density plasma reactor for plasma assisted materials processing |
US5569363A (en) * | 1994-10-25 | 1996-10-29 | Sony Corporation | Inductively coupled plasma sputter chamber with conductive material sputtering capabilities |
US5763851A (en) * | 1995-11-27 | 1998-06-09 | Applied Materials, Inc. | Slotted RF coil shield for plasma deposition system |
-
1997
- 1997-10-06 EP EP97307895A patent/EP0841683A3/fr not_active Withdrawn
- 1997-10-06 SG SG1997003673A patent/SG60123A1/en unknown
- 1997-10-08 KR KR1019970051489A patent/KR19980032632A/ko not_active Application Discontinuation
- 1997-10-08 JP JP9312571A patent/JPH10229056A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
EP0841683A2 (fr) | 1998-05-13 |
KR19980032632A (ko) | 1998-07-25 |
EP0841683A3 (fr) | 1999-12-01 |
JPH10229056A (ja) | 1998-08-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2311299B (en) | Inductively coupled plasma chemical vapor deposition technology | |
AU4081596A (en) | Metallic RF or thermal shield for automatic vacuum placement | |
EP0688038A3 (fr) | Système de traitement par plasma micro-onde | |
AU1332895A (en) | Inductively coupled plasma sputter chamber with conductive material sputtering capabilities | |
TW501842U (en) | Structure for incorporationg an inductively coupled plasma source in plasma processing chamber | |
SG87153A1 (en) | High density plasma source for ionized metal deposition | |
AU2587699A (en) | Cathode arc vapor deposition | |
EP0805475A3 (fr) | Appareil de traitement par plasma | |
IL144001A0 (en) | Gas injection system for plasma processing | |
AUPP635298A0 (en) | Plasma antenna | |
SG60123A1 (en) | Improved darkspace shield for improved rf transmission in inductively coupled plasma sources for sputter deposition | |
AU3978299A (en) | Processing system with dual ion sources | |
SG67546A1 (en) | Cathodic arc vapor deposition apparatus | |
GB2319941B (en) | Plasma gas processing | |
GB2340845B (en) | Magnetron sputtering apparatus | |
GB9718947D0 (en) | Vacuum sputtering apparatus | |
SG54576A1 (en) | Improved inductively coupled plasma source | |
GB2291184B (en) | Inductively coupled plasma atomic emission spectroscopy | |
GB2267291B (en) | Plasma deposition process | |
SG77122A1 (en) | Deposition-preventing part for physical vapor deposition apparatuses | |
AU4832299A (en) | Microwave processing system for metals | |
AU1026897A (en) | Torch for inductively coupled plasma spectrometry | |
SG76519A1 (en) | Method for providing full-face high density plasma deposition | |
GB9910653D0 (en) | Microwave plasma systems | |
AU3808695A (en) | Coin deposit lock for trolleys |