SG50543A1 - Fabrication of phase-shifting lithographic masks - Google Patents

Fabrication of phase-shifting lithographic masks

Info

Publication number
SG50543A1
SG50543A1 SG1996004583A SG1996004583A SG50543A1 SG 50543 A1 SG50543 A1 SG 50543A1 SG 1996004583 A SG1996004583 A SG 1996004583A SG 1996004583 A SG1996004583 A SG 1996004583A SG 50543 A1 SG50543 A1 SG 50543A1
Authority
SG
Singapore
Prior art keywords
fabrication
phase
lithographic masks
shifting lithographic
shifting
Prior art date
Application number
SG1996004583A
Other languages
English (en)
Inventor
Christophe Pierrat
Joseph Gerard Garofalo
Robert Louis Kostelak Jr
Sheila Valdya
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of SG50543A1 publication Critical patent/SG50543A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG1996004583A 1991-11-22 1992-11-12 Fabrication of phase-shifting lithographic masks SG50543A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79749591A 1991-11-22 1991-11-22

Publications (1)

Publication Number Publication Date
SG50543A1 true SG50543A1 (en) 1998-07-20

Family

ID=25170988

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996004583A SG50543A1 (en) 1991-11-22 1992-11-12 Fabrication of phase-shifting lithographic masks

Country Status (5)

Country Link
US (1) US5338626A (fr)
EP (1) EP0543569B1 (fr)
JP (1) JPH05232684A (fr)
DE (1) DE69228585T2 (fr)
SG (1) SG50543A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100298609B1 (ko) * 1992-07-30 2001-11-30 기타지마 요시토시 위상쉬프트층을갖는포토마스크의제조방법
US5718829A (en) * 1995-09-01 1998-02-17 Micron Technology, Inc. Phase shift structure and method of fabrication
US5741624A (en) 1996-02-13 1998-04-21 Micron Technology, Inc. Method for reducing photolithographic steps in a semiconductor interconnect process
US6114082A (en) * 1996-09-16 2000-09-05 International Business Machines Corporation Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same
US5780187A (en) * 1997-02-26 1998-07-14 Micron Technology, Inc. Repair of reflective photomask used in semiconductor process
US5935734A (en) * 1997-03-03 1999-08-10 Micron Technology, Inc. Method for fabrication of and apparatus for use as a semiconductor photomask
JP3474740B2 (ja) * 1997-03-25 2003-12-08 株式会社東芝 フォトマスクの設計方法
US5861330A (en) * 1997-05-07 1999-01-19 International Business Machines Corporation Method and structure to reduce latch-up using edge implants
US6185473B1 (en) * 1998-01-08 2001-02-06 Micron Technology, Inc. Optical pattern transfer tool
US6110624A (en) * 1999-01-04 2000-08-29 International Business Machines Corporation Multiple polarity mask exposure method
EP1143300A1 (fr) * 2000-04-03 2001-10-10 Shipley Company LLC Compositions pour photoréserves et leur utilisation
ATE426828T1 (de) * 2005-03-31 2009-04-15 Pgt Photonics Spa Verfahren zur herstellung eines umlenkspiegels in optischen wellenleiterbauelementen
CN102096334B (zh) * 2010-12-22 2012-08-08 中国科学院光电技术研究所 一种基于移相原理提高分辨率的超衍射成像器件及其制作方法
CN104485312A (zh) * 2014-12-30 2015-04-01 华天科技（西安）有限公司 一种改善muf工艺基板外围溢料的基板及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE290670C (fr) *
DE3712335A1 (de) * 1987-04-11 1988-10-20 Vdo Schindling Verfahren zur herstellung einer struktur
US4948706A (en) * 1987-12-30 1990-08-14 Hoya Corporation Process for producing transparent substrate having thereon transparent conductive pattern elements separated by light-shielding insulating film, and process for producing surface-colored material
JPH03228053A (ja) * 1990-02-01 1991-10-09 Fujitsu Ltd 光露光レチクル

Also Published As

Publication number Publication date
DE69228585D1 (de) 1999-04-15
EP0543569A1 (fr) 1993-05-26
EP0543569B1 (fr) 1999-03-10
JPH05232684A (ja) 1993-09-10
DE69228585T2 (de) 1999-08-19
US5338626A (en) 1994-08-16

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